JP2021506138A - 改善したシャント抵抗を有する薄膜ソーラーモジュール - Google Patents
改善したシャント抵抗を有する薄膜ソーラーモジュール Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 69
- 238000000059 patterning Methods 0.000 claims abstract description 219
- 239000006096 absorbing agent Substances 0.000 claims abstract description 139
- 239000000463 material Substances 0.000 claims abstract description 116
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000002800 charge carrier Substances 0.000 claims abstract description 23
- 239000000872 buffer Substances 0.000 claims description 39
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 claims description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 250
- 229910052733 gallium Inorganic materials 0.000 description 15
- 239000011669 selenium Substances 0.000 description 12
- 229910052711 selenium Inorganic materials 0.000 description 10
- 229910052717 sulfur Inorganic materials 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 7
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052951 chalcopyrite Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- -1 chalcopyrite compound Chemical class 0.000 description 3
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000010606 normalization Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
- H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
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- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
− レーザ出力、
− 層構造又は基板の照射表面に対するレーザビームの走行速度、
− レーザパルス繰り返し率、
− パルス持続時間、
− レーザのオンオフ周期。
(i) 吸収体層6の材料が、(平面の基板2に対して垂直に見たときに)第一のパターニングトレンチP1と同一平面にある吸収体層の領域と、第二のパターニングトレンチP2との間にあり、かつ
(ii) 背面電極5−2の材料が、第一のパターニングトレンチP1の領域と、(平面の基板2に対して垂直に見たときに)第二のパターニングトレンチP2と同一平面にある背面電極5−2の領域との間にある。
2 基板
3 層構造
4 基板表面
5 背面電極層
5−1、5−2、5−3 背面電極
6 吸収体層
6−1、6−2、6−3 吸収体
7 バッファー層
7−1、7−2、7−3 バッファー
8 前面電極層
8−1、8−2 前面電極
9 パターニングゾーン
10 太陽電池
11 電流路
12 短絡路(シャントパス)
13 絶縁トレンチ
14 残留トレンチ
15、15’ パターニングトレンチ壁
16、16’ 絶縁トレンチ壁
17、17’、17” パターニングトレンチ材料
18、18’ 絶縁トレンチ材料
Claims (15)
- 基板(2)、並びに前記基板上に適用された層構造(3)であって、背面電極層(5)、前面電極層(8)、及び前記背面電極層と前記前面電極層との間に配置された吸収体層(6)を含む層構造を有する、薄膜ソーラーモジュール(1)であって、
前記吸収体層(6)が第一の導電型のドーピングを有し、かつ前記前面電極層(8)が第二の導電型のドーピングを有し、
直列に接続した太陽電池(10)が、パターニングゾーン(9)によって前記層構造に形成されており、
少なくとも一つのパターニングゾーン(9)が、以下を有しており:
− 少なくとも前記背面電極層(5)を分割する第一のパターニングトレンチ(P1)、
− 少なくとも前記吸収体層(6)を分割する第二のパターニングトレンチ(P2)、
− 少なくとも前記前面電極層(8)を分割する第三のパターニングトレンチ(P3)、
前記第一のパターニングトレンチ(P1)は、前記吸収体層(6)の材料で充填されており、かつ
少なくとも一つの絶縁トレンチ(13)が、前記第一のパターニングトレンチ内に実装されており、この絶縁トレンチは、前記第一の導電型の電荷担体に対して前記吸収体層(6)よりも低い導電率を有する少なくとも一つの材料で充填されている、
薄膜ソーラーモジュールに関する。 - バッファー層(7)が、前記吸収体層(6)と前記前面電極層(8)との間に配置されており、前記絶縁トレンチ(13)が、前記バッファー層(7)の材料によって、少なくとも部分的に充填されている、請求項1に記載の薄膜ソーラーモジュール(1)。
- 前記バッファー層(7)の材料が、硫化インジウム(InS)、ナトリウムをドープした硫化インジウム(InS:Na)、硫化カドミウム(CdS)、亜鉛オキソ硫化物(ZnOS)、及び酸化亜鉛(i−ZnO)からなる群から選択される一つ又は複数の化合物を有する、請求項2に記載の薄膜ソーラーモジュール(1)。
- 前記絶縁トレンチ(13)が、前記第二の電荷担体型のドーピングを有する材料によって少なくとも部分的に充填されている、請求項1に記載の薄膜ソーラーモジュール(1)。
- 前記絶縁トレンチ(13)が、前記前面電極(8)の材料、特に、アルミニウムをドープした酸化亜鉛(ZnO:Al)によって充填されている、請求項4に記載の薄膜ソーラーモジュール(1)。
- 前記絶縁トレンチ(13)が、前記第一のパターニングトレンチ(P1)を充填している前記吸収体層(6)の材料内に実装されており、少なくとも前記第一のパターニングトレンチ(P1)内に形成された前記絶縁トレンチ(13)の向かい合ったトレンチ壁(16、16’)が、前記吸収体層(6)の材料によって形成されている、請求項1〜5のいずれか一項に記載の薄膜ソーラーモジュール(1)。
- 前記絶縁トレンチ(13)が、前記第一のパターニングトレンチ(P1)の縁(15’)に配置されており、前記縁(15’)が、前記第一のパターニングトレンチ(P1)の向かい合った縁(15)よりも、前記パターニングゾーン(9)の前記第二のパターニングトレンチ(P2)の近くに配置されている、請求項1〜5のいずれか一項に記載の薄膜ソーラーモジュール(1)。
- 前記パターニングゾーン(9)の前記第一の、第二の、及び第三のパターニングトレンチ(P1〜P3)の連続する方向で測定した、前記絶縁トレンチ(13)の寸法(B)の中心が、前記パターニングゾーン(9)の前記第一の、第二の、及び第三のパターニングトレンチ(P1〜P3)の連続する方向で測定した、前記第一のパターニングトレンチ(P1)の寸法の中心に対して、前記第二のパターニングトレンチ(P2)の方向にオフセットしている、請求項1〜7のいずれか一項に記載の薄膜ソーラーモジュール(1)。
- 前記絶縁トレンチ(13)が、前記第一のパターニングトレンチ(P1)の範囲内で前記吸収体層(6)の材料を完全に分割しているか、又は前記第一のパターニングトレンチ(P1)の縁(15’)から前記吸収体層(6)の材料を完全に分離している、請求項1〜8のいずれか一項に記載の薄膜ソーラーモジュール(1)。
- 前記絶縁トレンチ(13)が、前記第一の、第二の、及び第三のパターニングトレンチ(P1〜P3)の連続する方向で測定される幅(B)を有しており、それによって、前記第一のパターニングトレンチにおける前記第一の導電型の電荷担体に対する電気抵抗が、絶縁トレンチのない前記パターニングトレンチにおける前記第一の導電型の電荷担体に対する電気抵抗の、少なくとも1.5倍、特に少なくとも2倍、特に1.5倍〜4倍である、請求項1〜9のいずれか一項に記載の薄膜ソーラーモジュール(1)。
- 前記絶縁トレンチ(13)が、前記第一のパターンニングトレンチ(P1)の幅の少なくとも10%、特に少なくとも20%である、前記第一の、第二の、及び第三のパターニングトレンチ(P1〜P3)の連続する方向で測定される幅(B)を有している、請求項1〜9のいずれか一項に記載の薄膜ソーラーモジュール(1)。
- 以下の工程を含む、請求項1〜11のいずれか一項に記載の薄膜ソーラーモジュール(1)を製造する方法:
− 基板(2)を提供すること、
− 背面電極層(5)、前面電極層(8)、及び前記背面電極層(5)と前面電極層(8)との間に配置した吸収体層(6)を有する層構造(3)を、前記基板(2)上のパターニングゾーン(9)によって直列に接続した太陽電池(10)とともに製造すること、
ここで、前記吸収体層(6)が、第一の導電型のドーピングを有し、かつ前記前面電極層(8)が第二の導電型のドーピングを有し、
前記パターニングソーン(9)が、それぞれ、前記背面電極(5)を分割するための第一のパターニングトレンチ(P1)を有し、この第一のパターニングトレンチを、前記吸収体層(6)の材料で充填し、
少なくとも一つの絶縁トレンチ(13)を、少なくとも一つのパターニングゾーン(9)の背面電極層(5)を分割する第一のパターニングトレンチ(P1)内に実装し、かつ前記絶縁トレンチ(13)を、前記第一の導電型の電荷担体に対して前記吸収体層(6)よりも低い導電率を有する材料で充填する。 - 前記絶縁トレンチ(13)を、前記吸収体層(6)と、前記前面電極層(8)との間に配置されているバッファー層(7)の材料で充填する、請求項12に記載の方法。
- 前記絶縁トレンチ(13)を、前記前面電極層(8)の材料で充填する、請求項12に記載の方法。
- 前記前面電極層(8)の堆積後に、前記絶縁トレンチ(13)を作製し、かつ充填する、請求項12に記載の方法。
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