JP2021500479A - 傾斜組成を有する保護被覆を備える部品 - Google Patents
傾斜組成を有する保護被覆を備える部品 Download PDFInfo
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- JP2021500479A JP2021500479A JP2020523338A JP2020523338A JP2021500479A JP 2021500479 A JP2021500479 A JP 2021500479A JP 2020523338 A JP2020523338 A JP 2020523338A JP 2020523338 A JP2020523338 A JP 2020523338A JP 2021500479 A JP2021500479 A JP 2021500479A
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- silicon
- aluminum
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- 239000000203 mixture Substances 0.000 title claims abstract description 86
- 239000011253 protective coating Substances 0.000 title 1
- 239000010410 layer Substances 0.000 claims abstract description 169
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 239000010703 silicon Substances 0.000 claims abstract description 71
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 66
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000919 ceramic Substances 0.000 claims abstract description 13
- 239000002131 composite material Substances 0.000 claims abstract description 8
- 239000011247 coating layer Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 59
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 41
- 239000000725 suspension Substances 0.000 claims description 31
- 239000002245 particle Substances 0.000 claims description 29
- 229910009818 Ti3AlC2 Inorganic materials 0.000 claims description 22
- 229910009817 Ti3SiC2 Inorganic materials 0.000 claims description 17
- 239000011241 protective layer Substances 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 239000011153 ceramic matrix composite Substances 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 10
- 238000005507 spraying Methods 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 9
- 239000013626 chemical specie Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 230000007613 environmental effect Effects 0.000 claims description 4
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- 230000006866 deterioration Effects 0.000 claims description 3
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- -1 on the other hand Substances 0.000 claims 1
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- 238000004519 manufacturing process Methods 0.000 abstract description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 238000005755 formation reaction Methods 0.000 description 12
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- 230000007246 mechanism Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
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- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 238000007751 thermal spraying Methods 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
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- 230000007935 neutral effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- ZGHDMISTQPRNRG-UHFFFAOYSA-N dimolybdenum Chemical compound [Mo]#[Mo] ZGHDMISTQPRNRG-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 125000005624 silicic acid group Chemical group 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 108010004034 stable plasma protein solution Proteins 0.000 description 1
- 229910000601 superalloy Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
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Abstract
Description
・高温(<1100℃)で安定である被覆を有する。
・炭化ケイ素基材SiC/SiC及びセラミック遮熱の膨張係数に近い膨張係数を有する被覆を有する。
・アルミニウムに富んだ側にアルミナを形成する。
・シリコンに富んだ側のSiC/SiC基材と相互作用しない。
・アルミニウム/シリコン遷移領域において弱い金属間相を形成しない。
・アルミニウム部分及びシリコン部分は、傾斜組成層において、中間の高さの関数として、直線的に展開する。
・シリコン及びアルミニウムのモル比の合計は、傾斜組成層において、中間の高さのいずれの位置であっても可変である。
・傾斜組成層は、Ti3AlC2MAX相材料及びTi3SiC2MAX相材料を含む。
・機構は、
・厚さが10μm〜100μmの間であることができる、シリコンを本質的に含む副層、
・厚さが50μm〜500μmの間であり、部品から離れると、0.1〜0.4at%/μmの間の比率で、SiがAlによって置換される、傾斜組成層、
・厚さが10〜300μmの間であり、酸化されるとき、表面においてアルミナを生成し、多湿環境における耐性を増すように、Ti2AlCで本質的に構成されている生成層、
・アルミナ層、
・厚さ50μm〜1000μmの間を有するセラミックで構成され、外部環境と部品との間の伝達を制限するように設計された、環境障壁及び遮熱、
を含むことができる。
・機構は、
・厚さが10μm〜100μmの間であることができる間の厚さであり、シリコンで本質的に構成される副層、
・厚さが50μm〜500μmの間であり、部品から離れると、0.1〜0.4at%/μmの間の比率で、SiがAlによって置換される、傾斜組成層、
・厚さが50〜300μmの間であり、酸化されるとき、表面においてアルミナを生成し、多湿環境における耐性を増すように、Ti2AlCで本質的に構成されている生成層、
・アルミナ層、
を含むことができる。
・機構は、
・厚さが50μm〜500μmの間であり、部品から離れると、0.1〜0.4at%/μmの間の比率で、SiがAlによって置換される、傾斜組成層、
・厚さが50〜300μmの間であり、酸化されるとき、表面においてアルミナを生成し、多湿環境における耐性を増すように設計され、Ti3AlC2で本質的に構成されている生成層、
・アルミナ層(7)、
を含むことができる。
・堆積させる前の表面調製条件を最適化するステップ、及び
・上記傾斜組成層を構成する化学種を溶射することによって、傾斜組成層を実現するステップ、
を含み、
傾斜組成層が、少なくとも1種のシリコンMAX相材料及び少なくとも1種のアルミニウムMAX相材料を含み、シリコンMAX相材料及びアルミニウムMAX相材料が、傾斜組成層の、所与の比率を示す、方法も提案する。傾斜組成層は、溶射装置に、一方でアルミニウムMAX相材料の粒子、他方でシリコンMAX相材料の粒子を注入することによって製造され、アルミニウムMAX相材料が、到達した層の高さの関数として、徐々にシリコンMAX相材料を置き換える。
・アルミニウムMAX相材料の粒子及びシリコンMAX相材料の粒子は、2個の別個の容器において溶媒中に懸濁させたTi3AlC2の粉末及びTi3SiC2の粉末であり、次いで、Ti3AlC2懸濁物及びTi3SiC2懸濁物が、MAX相材料の懸濁物の粒子を部品上に、加熱し、噴霧するように設計されたプラズマ中に、制御された比率で注入され、結果として堆積物を生じる。
・溶媒は、傾斜組成層における酸化物の存在を制限するように、Ti3AlC2粒子及びTi3SiC2粒子からの酸化物形成を制限するように設計された非水性溶媒である。
・アルミニウムMAX相材料の粒子の溶媒中懸濁物を含む第1槽、
・シリコンMAX相材料の粒子の溶媒中懸濁物を含む第2槽、
・第1懸濁物注入器が、第1パイプによって第1槽に取り付けられ、第2懸濁物注入器が、第2パイプによって第2槽に連結した、第1懸濁物注入器及び第2懸濁物注入器であって、懸濁物注入器、アルミニウム粒子及びシリコン粒子の注入率を制御することができるように設計された、第1懸濁物注入器及び第2懸濁物注入器、
・アルミニウムMAX相材料の粒子及びシリコンMAX相材料の粒子を注入するプラズマを生成するように設計されたプラズマトーチであって、プラズマが、注入された粒子を、部品上で、加熱し、噴霧する、プラズマトーチ、
を備える装置を提案する。
・基材5は、高さh1と高さh2との間に延伸する(h1が0であり、高さh2がh1より大きいことは既知である)、
・副層4は、高さh2と高さh3との間に延伸する(h3がh2より大きいことは既知である)、
・傾斜組成層3は、高さh3と高さh4との間に延伸する(h4がh3より大きいことは既知である)、
・アルミナ生成層5は、高さh4と高さh5との間に延伸する(h5がh4より大きいことは既知である)及び、
・アルミナ層は、高さh5と高さh6との間に延伸する(h6がh5より大きいことは既知である)、
ことに留意されたい。
Claims (10)
- 少なくとも一部セラミックマトリックス複合材を含み、複合材が、環境的劣化に対して、少なくとも1種の保護層(2)で少なくとも局所的に被覆されている機械部品(1)であって、保護層(2)が、傾斜組成被覆層(3)を含み、傾斜組成層(3)が、少なくとも1種のシリコンMAX相材料及び少なくとも1種のアルミニウムMAX相材料を含み、傾斜組成層(3)が、保護層(2)内で、機械部品(1)に関する第1の高さ(h3)と機械部品(3)に関する第2の高さ(h4)との間に延伸し、第1の高さ(h3)の傾斜組成層(3)の組成が、アルミニウムを含まず、第2の高さ(h4)の傾斜組成層(3)の組成が、シリコンを含まず、第1の高さ(h3)と第2の高さ(h4)との間の中間の高さ(h)が、アルミニウム及びシリコンを含む組成を有し、シリコン部分及びアルミニウム部分が、傾斜組成層(3)において、中間の高さ(h)の位置の関数として、徐々に展開し、中間の高さ(h)が第2の高さ(h4)に近づくとき、アルミニウム部分が増加することを特徴とする、機械部品(1)。
- アルミニウム部分及びシリコン部分が、傾斜組成層(3)において、中間の高さ(h)の関数として、直線的に展開することを特徴とする、請求項1に記載の機械部品(1)。
- シリコン及びアルミニウムのモル比の合計が、傾斜組成層(3)において、中間の高さ(h)のいずれの位置であっても可変であることを特徴とする、請求項1又は請求項2に記載の機械部品(1)。
- 傾斜組成層(3)が、Ti3AlC2MAX相材料及びTi3SiC2MAX相材料を含むことを特徴とする、請求項1から3の一項に記載の機械部品(1)。
- 厚さが10μm〜100μmの間であることができる、シリコンを本質的に含む副層(4)
厚さが50μm〜500μmであり、部品から離れると、0.1〜0.4at%/μmの間の比率で、SiがAlによって置換される、傾斜組成層(3)
厚さが10〜300μmの間であり、酸化されるとき、表面においてアルミナを生成するようにTi2AlCで本質的に構成されて、多湿環境における耐性を増す、生成層(6)
アルミナ層(7)
50μm〜1000μmの間の厚さを有するセラミックで製造され、外部環境と部品(1)との間の伝達を制限するように設計された、環境障壁(8)
を含むことを特徴とする、請求項1から4の一項に記載の機械部品(1)。 - 厚さが10μm〜100μmでの間あることができる、シリコンの副層(4)
厚さが50μm〜500μmの間であり、部品から離れると、0.1〜0.4at%/μmの比率で、SiがAlによって置換される、傾斜組成層(3)
厚さが50〜300μmの間であり、酸化されるとき、表面においてアルミナを生成するようにTi2AlCで本質的に構成される、生成層(6)
アルミナ層(7)
を含むことを特徴とする、請求項1から4の一項に記載の機械部品(1)。 - 厚さが50μm〜500μmの間であり、部品から離れると、0.1〜0.4at%/μmの間の比率で、SiがAlによって置換される、傾斜組成層(3)
厚さが50〜300μmの間であり、酸化されるとき、表面においてアルミナを生成するように設計され、Ti3AlC2で本質的に構成される、生成層(6)
アルミナ層(7)
をさらに含むことを特徴とする、請求項1〜4の一項に記載の機械部品(1)。 - 少なくとも1種の保護層(2)を機械部品(1)に堆積させる方法(9)であり、保護層(2)が、少なくとも1種の傾斜組成層(3)を含み、方法(9)が、以下のステップ:
傾斜組成層(3)を構成する化学種を溶射することによって、傾斜組成層(3)を実現するステップを含む方法(9)であって、
傾斜組成層(3)が、少なくとも1種のシリコンMAX相材料及び少なくとも1種のアルミニウムMAX相材料を含み、傾斜組成層(3)が、溶射装置(11)に、一方でアルミニウムMAX相材料の粒子を、他方でシリコンMAX相材料の粒子を注入することによって製造され、アルミニウムMAX相材料が、到達した層の高さの関数として、徐々にシリコンMAX相材料を置き換えることを特徴とする、方法(9)。 - アルミニウムMAX相材料の粒子及びシリコンMAX相材料の粒子が、2個の別個の容器において溶媒中に懸濁させたTi3AlC2の粉末及びTi3SiC2の粉末であり、次いで、Ti3AlC2懸濁物及びTi3SiC2懸濁物が、MAX相材料の懸濁物中の粒子を部品(1)上に、加熱し、噴霧するように設計されたプラズマ(10)中に、制御された比率で注入され、結果として堆積物を生じることを特徴とする、少なくとも1つの材料層を部品(1)に堆積させる、請求項8に記載の方法(9)。
- 溶媒が、傾斜組成層(3)における酸化物の存在を制限するように、Ti3AlC2粒子及びTi3SiC2粒子からの酸化物形成を制限するように設計された、水性溶媒又は非水性溶媒であることを特徴とする、少なくとも1つの材料層を部品(1)に堆積させる、請求項9に記載の方法(9)。
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