JP2021190625A - Dicing tape substrate film and dicing tape - Google Patents

Abstract

To provide a dicing tape substrate film capable of suppressing generation of sawdust in a dicing step compatibly with improvement of pickup property in a pickup step, and a dicing tape.SOLUTION: The present invention relates to a dicing tape substrate film consisting of a thermoplastic polyester-elastomer containing resin which is a block copolymer having a first face on which an adhesive layer is formed thereon, and a second face opposed thereto, and constituted of a hard segment (A) consisting of polyester consisting of aromatic dicarboxylic acid and aliphatic diol or alicyclic diol;, and a soft segment (B) consisting of aliphatic polyether. In a case where dynamic viscoelasticity of the substrate film is measured in a both-end-supported beam bending mode under conditions of frequency 1 Hz and temperature rising rate 0.5°C/min, the substrate film has a bending elastic modulus (G') ranging from 10 MPa or more to 135 MPa or less at 23°C.SELECTED DRAWING: Figure 1

Description

The present invention relates to a base film for a dicing tape used for fixing the semiconductor wafer when dicing the semiconductor wafer to a chip-shaped element, and a dicing tape using the base film.

Conventionally, in the manufacture of a semiconductor device, in order to separate a semiconductor wafer into a semiconductor chip by a dicing (hereinafter, may be simply referred to as “cutting” or “cutting”) process, a dicing tape or the dicing tape is used. A dicing die bond film integrated with the die bond film may be used. The dicing tape has a form in which an adhesive layer is provided on a base film, and a semiconductor wafer is arranged on the adhesive layer and fixed so that individualized semiconductor chips are not scattered when dicing the semiconductor wafer. Used for holding applications. After that, the semiconductor chip is peeled off from the adhesive layer of the dicing tape and fixed to an adherend such as a lead frame or a wiring substrate via an adhesive or an adhesive film prepared separately.

The dicing die bond film is provided on the adhesive layer of the dicing tape so that the die bond film (hereinafter, may be referred to as “adhesive film” or “adhesive layer”) can be peeled off. In the manufacture of a semiconductor device, a semiconductor wafer is held on a die bond film of a dicing die bond film, and the semiconductor wafer is diced together with the die bond film to obtain individual semiconductor chips with an adhesive film. Then, the semiconductor chip is peeled off from the adhesive layer of the dicing tape together with the die bond film as a semiconductor chip with a die bond film, and the semiconductor chip is fixed to an adherend such as a lead frame or a wiring substrate via the die bond film.

In order to obtain the semiconductor chip or the semiconductor chip with a dicing film as described above, blade dicing is performed on the semiconductor wafer held on the adhesive layer surface of the dicing tape or on the die bond film surface of the dicing die bond film. May be struck. In this blade dicing, a semiconductor wafer or a semiconductor wafer and a dicing die bond film that holds the semiconductor wafer are cut by a dicing blade that rotates at high speed to form a semiconductor chip of a predetermined size or a semiconductor chip with an adhesive film. It is diced into pieces. In this blade dicing step, cutting is carried out while supplying running water to the dicing blade and the semiconductor wafer for the purpose of removing cutting chips that are inevitably generated.

In such a blade dicing step, in order to reliably obtain a semiconductor chip or a semiconductor chip with an adhesive film from a workpiece of a large-diameter semiconductor wafer, it is preferable to use a so-called full-cut method in which they are completely cut and divided. Actually, considering the operation accuracy of the device and the thickness accuracy of the dicing tape, dicing film and semiconductor wafer used, the cutting depth of the dicing blade that cuts from the surface opposite to the dicing tape with respect to the semiconductor wafer etc. It may even reach the base film of the dicing tape. In this case, lint-like cutting chips may be generated during dicing. This is because frictional heat is generated at the portion of the base material that comes into contact with the high-speed rotating dicing blade, and the base material constituting the material softened and melted by the frictional heat is stretched by the tensile action received from the high-speed rotating dicing blade to form a thread. It is believed that debris-like cutting debris is generated.

The lint-like cutting chips often remain attached to the semiconductor chip that has undergone the blade dicing process under running water supply. If lint-like cutting chips remain attached to the semiconductor chip, the reliability of the semiconductor element deteriorates, a recognition error occurs during the pickup process and the semiconductor chip cannot be picked up reliably, and the semiconductor chip cracks and is picked up. There are problems such as the inability to mount the picked up semiconductor chip in the correct orientation and with high accuracy. Therefore, in the blade dicing step, it is desired that the amount of such lint-like cutting chips generated is smaller.

As a conventional technique for suppressing the generation of cutting chips, Reference 1 provides a dicing adhesive tape capable of preventing the cutting chips from remaining on the surface of a semiconductor wafer in a full-cut dicing method, and has a test temperature of 190. Adhesive for fixing semiconductor wafers, characterized in that the MFR (melt mass flow rate) at ° C. is 3 or less, and a resin layer containing a component having a carboxyl group as a component of the polymer and a pressure-sensitive adhesive layer are laminated. The tape is disclosed. Further, Reference Document 2 has a layer containing a resin containing an aromatic polyamide for the purpose of providing a dicing substrate film and a dicing film that generate almost no cutting chips in a dicing process of a semiconductor wafer or the like. A substrate film for dicing is disclosed.

On the other hand, in recent years, with the spread of IC cards and the rapid increase in the capacity of USB memory, and the increase in the number of semiconductor chips stacked, it is desired to further reduce the thickness of the semiconductor chips. Therefore, it is necessary to reduce the thickness of a semiconductor chip, which was conventionally about 200 to 350 μm, to a thickness of 50 to 100 μm or less. In addition, in order to realize further cost reduction, it is strongly required to produce semiconductor chips with as high productivity and high yield as possible, and the ultimate efficiency improvement is required in each process of the semiconductor device manufacturing process. There is.

However, silicon, glass, and the like used as semiconductor chips are brittle materials, and when the thickness of the semiconductor chip is reduced as described above, the risk of damage during transportation and processing is higher. For example, one of the manufacturing processes of a semiconductor device is to pick up an individualized semiconductor chip or a semiconductor chip with an adhesive film, but if the thickness of the semiconductor chip becomes thin, the semiconductor chip cracks during pickup. It will be easier. In the pick-up process, the semiconductor chip after dicing or the semiconductor chip with the adhesive film is pushed up from the base film side of the dicing tape with a push-up pin (needle) or the like to peel off the semiconductor chip or the semiconductor chip with the adhesive film from the adhesive layer. The mainstream method is to pick up the semiconductor chip or the semiconductor chip with the adhesive film from the adhesive layer of the dicing tape by adsorbing the semiconductor chip or the semiconductor chip with the adhesive film from above with the adsorption collet. In this case, when the semiconductor chip or the semiconductor chip with the adhesive film is pushed up, if it is difficult to promote the peeling of the semiconductor chip or the semiconductor chip with the adhesive film from the adhesive layer, the push-up height (push-up amount) is made larger. It is considered that the semiconductor chip needs to be promoted to promote peeling, and as a result, the stress applied to the semiconductor chip becomes larger and the warp of the semiconductor chip becomes larger, resulting in cracking.

Therefore, at present, for example, after reducing the push-up speed of the push-up pin (needle) or adjusting it to an appropriate speed, carefully pick up the thin film semiconductor chip while adjusting the push-up height. It corresponds more. However, it cannot be said that the decrease in yield due to the cracking of the semiconductor chip in the pickup process has been sufficiently eliminated, and it depends largely on the type of dicing tape. Further improvement is eagerly desired. Specifically, a dicing tape that can be picked up without damaging the thin film semiconductor chip with a push-up speed within an acceptable range for practical use and a smaller push-up height is desired.

As a conventional technique for improving pickability, Reference Document 3 describes a loop measured under a predetermined condition for the purpose of providing a dicing tape capable of efficiently picking up a thin semiconductor chip in the pick-up step after the dicing step. A dicing tape having an adhesive layer on a base film having a stiffness of 3 to 25 mN is disclosed. Further, in Cited Document 4, a specific hard segment component and a soft segment component are combined in order to provide an antistatic film used in the manufacture of a semiconductor device having both good expand characteristics and pick-up properties. A film made of a polyester block copolymer is disclosed.

Japanese Unexamined Patent Publication No. 9-8111 Japanese Unexamined Patent Publication No. 2016-31996 Japanese Unexamined Patent Publication No. 2010-225753 Japanese Unexamined Patent Publication No. 2006-152072

In the adhesive tape for fixing semiconductor wafers of Reference 1, the generation of cutting chips in the diving process is certainly suppressed by using a resin having a high melt viscosity for the base film, but the pickup characteristics of the thin film semiconductor chip Is not specifically mentioned. The ethylene-methacrylic acid copolymer and the ethylene-methacrylic acid- (2-methyl-propyl acrylate) ternary copolymer resin, which are the materials of the base film exemplified in the examples, have high melt viscosity. The material is a little hard, and if the semiconductor chip is thin, the pickup characteristics may be insufficient.

Further, also in the dicing film of Reference Document 2, the generation of cutting chips in the dicing process is certainly suppressed, but the pickup characteristics of the thin film semiconductor chip are not particularly mentioned. Since the aromatic polyamide, which is the main component of the material of the base film exemplified in the examples, has a high melting point and is a hard material, the pickup characteristics are insufficient when the semiconductor chip thickness is thin. There was a risk.

On the other hand, in the dicing tape of Reference Document 3, a certain improvement effect is observed in the pick-up property of the semiconductor chip having a thickness of 100 μm in the examples, but the push-up height (pin height) at the time of pickup is still improved (reduced). There was room. Although there is no particular mention of suppressing the generation of cutting chips in the dicing process, resins such as ethylene-vinyl acetate and ethylene-methacrylic acid copolymer having a large MFR, which are the materials of the base film exemplified in the examples, are used. The melting point was rather low, and there was a risk that it would be insufficient to suppress the generation of cutting chips in the dicing process.

Further, in the semiconductor wafer fixing film of Reference 4, it is recognized that the pick-up property of the semiconductor chip having a thickness of 350 μm is good in the examples, but the pickup when applied to a semiconductor chip having a thickness of 100 μm or less. The characteristics and specific contents are unknown. Further, there is no particular mention of suppressing the generation of cutting chips in the dicing process.

As described above, the dicing tape of the prior art is sufficient from the viewpoint of suppressing the generation of cutting chips in the dicing process and improving the pick-up property in the pick-up process when applied to a semiconductor wafer having a thickness of 100 μm or less. It was hard to say that I was satisfied with the product, and there was still room for improvement.

The present invention has been made in view of the above problems and situations, and even when applied to a semiconductor wafer having a thickness of 100 μm or less, it suppresses the generation of cutting chips in the dicing process and improves the pick-up property in the pick-up process. It is an object of the present invention to provide a base film for a dicing tape and to provide a dicing tape using the base film, which enables both of these to be achieved in a range that does not pose a practical problem.

That is, the present invention
The pressure-sensitive adhesive layer has a first surface formed on it and a second surface facing the first surface thereof.
A block copolymer composed of a hard segment (A) containing polyester as a main component and an aliphatic dicarboxylic acid and an aliphatic diol or an alicyclic diol, and a soft segment (B) containing an aliphatic polyether as a main component. A base film for dicing tape, which is made of a resin containing a thermoplastic polyester elastomer.
The base film was bent at 23 ° C. in the range of 10 MPa or more and 135 MPa or less when the dynamic viscoelasticity was measured under the conditions of a frequency of 1 Hz and a heating rate of 0.5 ° C./min in a double-sided beam bending mode. Provided is a base film characterized by having an elastic modulus (G').

In one embodiment, the substrate film has a flexural modulus (G') at 23 ° C. in the range of 17 MPa or more and 115 MPa or less.

In one embodiment, the soft segment (B) has a content (copolymerization amount) in the range of 51% by mass or more and 73% by mass or less with respect to the total mass of the hard segment (A) and the soft segment (B). Have.

In one embodiment, the soft segment (B) has a content (copolymerization amount) in the range of 55% by mass or more and 70% by mass or less with respect to the total mass of the hard segment (A) and the soft segment (B). Have.

In one embodiment, the hard segment (A) is polybutylene terephthalate (PBT).

In one embodiment, the soft segment (B) is an ethylene oxide adduct polymer (PPG-EO adduct polymer) of poly (tetramethylene oxide) glycol (PTMG) and / or poly (propylene oxide) glycol.

In one embodiment, the substrate film comprises a single resin layer, and the resin containing the thermoplastic polyester elastomer constituting the layer has a crystal melting point in the range of 160 ° C. or higher and 200 ° C. or lower.

In one embodiment, the base film is composed of a plurality of laminated resin layers, and the resin containing the thermoplastic polyester elastomer constituting the layer having the first surface is in the range of 160 ° C. or higher and 200 ° C. or lower. It has a crystal melting point.

In one embodiment, the substrate film has a thickness in the range of 70 μm or more and 155 μm or less.

In one embodiment, the base film has an elongation rate in the range of 300% or more and 700% or less.

The present invention also provides a dicing tape having any of the above-mentioned base films and a pressure-sensitive adhesive layer formed on the surface thereof.

According to the present invention, even when applied to a semiconductor wafer having a thickness of 100 μm or less, it is possible to suppress the generation of cutting chips in the dicing process and improve the pick-up property in the pickup process within a range that does not pose a practical problem. It is possible to provide a base film for a dicing tape. Further, it is possible to provide a dicing tape using the base film.

(A) to (d) are sectional views showing an example of the structure of the base film for the dicing tape to which this embodiment is applied. It is sectional drawing which showed an example of the structure of the dicing tape using the base film for the dicing tape to which this embodiment is applied. It is sectional drawing which showed an example of the structure which bonded the dicing tape using the base film for the dicing tape to which this embodiment is applied with a dicing film. It is a flowchart explaining the manufacturing method of a dicing tape. It is a flowchart explaining the manufacturing method of a semiconductor chip. It is a perspective view which showed the state which the ring frame (wafer ring) was attached to the outer edge portion of a dicing tape (or a dicing die bond film), and the semiconductor wafer was attached to the central portion. (A) to (f) are sectional views showing a manufacturing example of a semiconductor chip using a dicing tape. (A) to (f) are sectional views showing a manufacturing example of a semiconductor chip using a dicing die bond film.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as needed. However, the present invention is not limited to the following embodiments.

<< Composition of base film and dicing tape >>
FIGS. 1A to 1D are cross-sectional views showing an example of the configuration of the base film 1 for the dicing tape to which the present embodiment is applied. The base film 1 of the present embodiment may be a single layer of a single resin (see (a) 1-A in FIG. 1), or a laminate composed of a plurality of layers of the same resin (see FIG. 1 (a) 1-A). b) 1-B) or a laminate composed of a plurality of layers of different resins (see (c) 1-C and (d) 1-D in FIG. 1). In the case of a laminated body composed of a plurality of layers, the number of layers is not particularly limited, but is preferably in the range of 2 layers or more and 5 layers or less.

FIG. 2 is a cross-sectional view showing an example of the configuration of a dicing tape using the base film 1 for the dicing tape to which the present embodiment is applied. As shown in FIG. 2, the dicing tape 10 has a structure in which the pressure-sensitive adhesive layer 2 is provided on the first surface of the base film 1. Although not shown, a base sheet (release liner) having releasability is provided on the surface of the pressure-sensitive adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1). You may have. The pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 2 is, for example, an active energy ray-curable acrylic type that cures and shrinks when irradiated with active energy rays such as ultraviolet rays (UV) to reduce the adhesive force to the adherend. Adhesives and the like are used.

In the semiconductor manufacturing process, it is used as follows. A semiconductor wafer is held (temporarily fixed) on the pressure-sensitive adhesive layer 2 of the dicing tape 10, and the semiconductor wafer is diced (cut) to form individual semiconductor chips, and then the semiconductor chip is peeled off from the pressure-sensitive adhesive layer 2 of the dicing tape 10. do. The obtained semiconductor chip is fixed to an adherend such as a lead frame or a wiring board via an adhesive prepared separately.

FIG. 3 is an example of a so-called dicing die bond film having a structure in which a dicing tape 10 using a base film 1 for a dicing tape to which the present embodiment is applied is bonded and integrated with a dicing film (adhesive layer) 3. It is a cross-sectional view which showed. As shown in FIG. 3, the dicing die bond film 20 has a structure in which the dicing die bond film (adhesive layer) 3 is detachably adhered and laminated on the adhesive layer 2 of the dicing tape 10.

In the semiconductor manufacturing process, it is used as follows. After holding (adhering) a semiconductor wafer on the dicing film 3 of the dicing die bond film 20 and dicing the semiconductor wafer into individual semiconductor chips, the semiconductor chip is combined with the dicing film (adhesive layer) 3 of the dicing tape 10. It peels off from the pressure-sensitive adhesive layer 2. The obtained semiconductor chip with the die bond film (adhesive layer) 3 is fixed to an adherend such as a lead frame or a wiring board via the die bond film (adhesive layer) 3. Although not shown, the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) and the surface of the die bond film 3 (the surface facing the adhesive layer 2) A base sheet (release liner) having a mold releasability may be provided on the opposite surface).

≪Base film≫
The base film 1 of the present embodiment is composed of a resin containing a thermoplastic polyester elastomer. The thermoplastic polyester elastomer is preferably contained in an amount of 80% by mass or more, more preferably 90% by mass or more, based on the total amount of the resin constituting the base film 1. First, the thermoplastic polyester elastomer, which is the main component of the resin constituting the base film 1, will be described below.

<Thermoplastic polyester elastomer>
The thermoplastic polyester elastomer is a hard segment (A) containing a polyester composed of an aromatic dicarboxylic acid and an aliphatic diol or an alicyclic diol as a main component, and a soft segment containing an aliphatic polyether as a main component (a). A block copolymer containing B) as a constituent component of the copolymer, that is, a polyester-polyester type thermoplastic elastomer. Here, "based on ..." means that the above-mentioned "polyester composed of an aromatic dicarboxylic acid and an aliphatic diol or an alicyclic diol" is 75% by mass in the total amount of the above-mentioned hard segment (A). It means that it occupies the above, preferably 80% by mass or more, and particularly preferably 90% by mass or more. Similarly, it means that the "aliphatic polyether" occupies 75% by mass or more in the total amount of the soft segment (B), preferably 80% by mass or more, and particularly preferably 90% by mass or more.

As described above, one of the preferable properties for suppressing the generation of lint-like cutting chips during dicing is the high melting point of the base film 1. On the other hand, one of the preferable characteristics for improving the pick-up property of the thin film semiconductor chip is the flexibility of the base film 1. However, these two characteristics are often in a trade-off relationship in general. That is, when trying to increase the melting point of the base film 1, the flexibility tends to be lost, while when trying to impart flexibility to the base film 1, the melting point tends to be low. The above-mentioned thermoplastic polyester elastomer having both high melting point and flexibility is suitable as a material capable of eliminating such a trade-off relationship. In particular, the base film 1 is formed by laminating a layer having a high melting point and a layer having excellent flexibility, and both characteristics can be exhibited as a single layer without depending on a method of controlling the melting point and flexibility. It is suitable as the material of 1.

(Hard segment (A))
As described above, the hard segment (A) of the thermoplastic polyester elastomer contains a polyester composed of an aromatic dicarboxylic acid and an aliphatic diol or an alicyclic diol as a main component. The aromatic polyester thus constructed is crystalline and has a high melting point. The hard domain made of the crystalline polyester (hard segment) substantially plays the role of a cross-linking point by giving a nodule point to the rubber-like soft segment described later. As a result, when the thermoplastic polyester elastomer is used as the material of the base film 1 of the dicing tape 10, it is difficult to melt during dicing, and even if it is melted, the crystallization speed is high and it is difficult to form a thread. The generation of waste-like cutting chips is suppressed.

The aromatic dicarboxylic acid constituting the polyester which is the main component of the hard segment (A) is not particularly limited, and an ordinary aromatic dicarboxylic acid can be used. Specific examples of the aromatic dicarboxylic acid include terephthalic acid, isophthalic acid, 5-sodium sulfoisophthalic acid, 2,6-naphthalenedicarboxylic acid, diphenyldicarboxylic acid and the like. Among them, as the aromatic dicarboxylic acid, terephthalic acid, 2,6-naphthalenedicarboxylic acid and the like are preferably used. From the viewpoint of ultraviolet transmission, terephthalic acid is preferably used. The amount of these aromatic dicarboxylic acids used is preferably 75% by mass or more, more preferably 80% by mass or more, and particularly preferably 90% by mass or more of the total acid component including other acid components. Further, instead of the aromatic dicarboxylic acid, an ester-forming derivative of these aromatic carboxylic acids can be used, whereby the acid component can be introduced into the polyester. For example, an alkyl ester of such an acid is typical, and a methyl ester is particularly preferably used. Specifically, methyl terephthalate is preferably used.

Examples of the other acid components include alicyclic dicarboxylic acids such as cyclohexanedicarboxylic acid and tetrahydrophthalic anhydride, succinic acid, glutaric acid, adipic acid, azelaic acid, sebacic acid, dodecanedioic acid, dimer acid, and hydrogenated dimer acid. Examples thereof include aliphatic dicarboxylic acids such as. The other acid components are used within a range that does not significantly lower the crystal melting point of the thermoplastic polyester elastomer, and the amount used is preferably 25% by mass or less, more preferably 20% by mass or less, and particularly preferably 10% by mass of the total acid component. % Or less. Further, ester-forming derivatives of these acids can also be used in the same manner as described above.

The aliphatic or alicyclic diol constituting the polyester which is the main component of the hard segment (A) is not particularly limited, and an ordinary aliphatic or alicyclic diol can be used. Examples of the aliphatic diol include alkylene glycols having 2 to 8 carbon atoms, and specifically, ethylene glycol, 1,3-propylene glycol, 1,4-butanediol, 1,6-hexanediol and the like. Can be used. As the alicyclic diol, 1,4-cyclohexanediol, 1,4-cyclohexanedimethanol and the like can be used. Of these, 1,4-butanediol or 1,4-cyclohexanedimethanol is preferably used. From the viewpoint of versatility and film-forming property, 1,4-butanediol, which is an aliphatic diol, is preferably used.

The component constituting the polyester which is the main component of the hard segment (A) is composed of a butylene terephthalate unit composed of terephthalic acid and 1,4-butanediol (sometimes referred to as polybutylene terephthalate (PBT)). Alternatively, a product consisting of a butylene terephthalate unit composed of 2,6-naphthalenedicarboxylic acid and 1,4-butanediol (sometimes referred to as polybutylene terephthalate (PBN)) is available in terms of physical properties, moldability, and cost performance. Preferably, from the viewpoint of ultraviolet transmission, a polybutylene terephthalate unit (PBT) is particularly preferable.

Further, when an aromatic polyester suitable as a polyester constituting the hard segment (A) in the thermoplastic polyester elastomer according to the present invention is produced in advance and then copolymerized with the soft segment (B) component, the aromatic polyester is used. , Can be obtained by a usual polyester manufacturing method. Further, the aromatic polyester preferably has a number average molecular weight Mn in the range of 10,000 or more and 40,000 or less.

(Soft segment (B))
As described above, the soft segment (B) of the thermoplastic polyester elastomer contains an aliphatic polyether as a main component. The aliphatic polyether has a low glass transition temperature (Tg) and has a rubber-like property, and plays a role of imparting appropriate flexibility to the thermoplastic polyester elastomer by controlling the balance with the hard segment (A). ing. As a result, when the thermoplastic polyester elastomer is used as the material of the base film 1 of the dicing tape 10, the flexural modulus (G') of the base film 1 at 23 ° C. is maximized in the pick-up property of the thin film semiconductor chip. It can be controlled to a range that can be improved up to, that is, a range of 10 MPa or more and 135 MPa or less. When the flexural modulus (G') of the base film 1 at 23 ° C. is in the range of 10 MPa or more and 135 MPa or less, the dicing tape 10 is pinned when the dicing tape 10 is pushed up by the push-up pin at the time of picking up the semiconductor chip. Since the tip of the semiconductor chip is easily curved as a fulcrum, even if the push-up height of the push-up pin is small, that is, even if the push-up pin is pushed up with a small force, the peeling of the four ends of the semiconductor chip from the adhesive layer 2 is likely to be promoted. ..

As a result, even when a thin film semiconductor wafer having a thickness of 100 μm or less is used, the thin film semiconductor chip is rapidly peeled off from the pressure-sensitive adhesive layer 2, and the thin film semiconductor chip can be easily formed with a force smaller than the conventional force. It can be picked up from the pressure-sensitive adhesive layer 2 of the dicing tape 10 without being damaged, and the pick-up success rate of the semiconductor chip can be further improved as compared with the conventional case.

The aliphatic polyether which is the main component of the soft segment (B) is not particularly limited, and specifically, for example, poly (ethylene oxide) glycol, poly (propylene oxide) glycol, and poly (tetramethylene oxide) glycol. , Poly (hexamethylene oxide) glycol, a copolymer of ethylene oxide and propylene oxide, an ethylene oxide addition polymer of poly (propylene oxide) glycol, poly (alkylene oxide) glycol such as a copolymer of ethylene oxide and tetrahydrofuran.

Among the above-mentioned aliphatic polyethers, poly (tetramethylene oxide) glycol (PTMG), ethylene oxide addition polymer of poly (propylene oxide) glycol (PPG-EO addition polymer), and copolymer glycol of ethylene oxide and tetrahydrofuran (EO / THF copolymer glycol) is preferable, and from the viewpoint of versatility and film-forming property, ethylene oxide addition polymer (PPG-EO addition weight) of poly (tetramethylene oxide) glycol (PTMG) and poly (propylene oxide) glycol is more preferable. Combined). Further, the number average molecular weight Mn of these soft segments is preferably about 300 or more and 6,000 or less in the copolymerized state. Specifically, PTMG850 (number average molecular weight Mn: molecular weight 850), PTMG1000 (number average molecular weight Mn: 1,000), PTMG1500 (number average molecular weight Mn: 1,500), PTMG2000 (number average molecular weight Mn: 2,000). ), PTMG3000 (number average molecular weight Mn: 3,000), PPG (number of added moles 2) -EO (number of added moles 9) addition polymer, PPG (same as 7) -EO (same as 14) addition polymer, PPG ( 41) -EO (36) addition polymer and the like.

The amount of the above-mentioned aliphatic polyether used is preferably 75% by mass or more, more preferably 80% by mass or more, and particularly preferably 90% by mass or more of all the soft segment components including other soft segment components other than the aliphatic polyether. preferable.

Examples of other soft segment components that can be used in combination with the above-mentioned aliphatic polyether include aliphatic polyesters such as polycaprolactone and polybutylene adipate, and aliphatic polycarbonates. The other soft segment components are used within a range that does not impair the flexibility of the thermoplastic polyester elastomer, and the amount used is preferably 25% by mass or less, more preferably 20% by mass or less, and particularly preferably 10 of the total soft segment components. It is less than mass%.

A preferred embodiment of the thermoplastic polyester elastomer of the present embodiment is a block copolymer using PBT or PBN in the hard segment (A) and PTMG or PPG-EO addition polymer in the soft segment (B). Be done. Specifically, a block copolymer composed of PBT-PTMG-PBT, a block copolymer composed of PBT- (PPG-EO addition polymer) -PBT, and a block composed of PBN-PTMG-PBN. A block copolymer composed of a copolymer, PBN- (PPG-EO addition polymer) -PBN is preferable. From the viewpoint of ultraviolet permeability, it is more preferably a block copolymer composed of PBT-PTMG-PBT or a block copolymer composed of PBT- (PPG-EO addition polymer) -PBT, and is versatile. From the viewpoint of film-forming property, a block copolymer composed of PBT-PTMG-PBT is particularly preferable. If necessary, these thermoplastic polyester elastomers can be used in combination of two or more as long as the effects of the present invention are not impaired, but from the viewpoint of film forming property, they are preferably used alone.

The content (copolymerization amount) of the soft segment (B) of the thermoplastic polyester elastomer is 51% by mass or more and 73% by mass with respect to the total mass of the hard segment (A) and the soft segment (B) which are constituents. The range is preferably the following, and more preferably 55% by mass or more and 70% by mass or less. When the base film 1 is a laminated body composed of a plurality of layers, the content of the soft segment (B) is calculated from the content of the soft segment (B) in each layer and the mass ratio of each layer in the entire layer. It means the value in the whole laminated body to be made. The mass ratio of the hard segment (A) and the soft segment (B) can be measured using an NMR measuring device. When the content of the soft segment (A) is less than 51% by mass, the flexural modulus (G') of the base film 1 becomes too large, and the thin film wafer is used in the semiconductor manufacturing process and the semiconductor chip pick-up process. The chip may be damaged or the pickup characteristics may deteriorate. On the other hand, if the content of the soft segment (A) exceeds 73% by mass, it may be difficult to form the base film 1 itself. Further, since the crystal melting point of the base film 1 becomes low and the elongation and stickiness become large, as a result of cutting into the base film 1 of the dicing tape 10 when the wafer is diced by a blade in the semiconductor manufacturing process, as a result, the base film 1 is cut. The base film 1 is melted and stretched to generate lint-like cutting chips, which may adhere to the semiconductor chip and reduce the reliability of the semiconductor element, or a recognition error during the pickup process. May cause. When the content (copolymerization amount) of the soft segment (B) of the thermoplastic polyester elastomer is within the above range, the flexural modulus (G') of the above-mentioned base film 1 at 23 ° C. is 10 MPa or more and 135 MPa or less. It will be easy to set it to an appropriate range.

The thermoplastic polyester elastomer can be produced by a known method. For example, lower alcohol diesters of dicarboxylic acids, excess amounts of low molecular weight glycols, and soft segment components are transesterified in the presence of catalysts such as organic acid salts and organic metal compounds, and the resulting reaction products are antimony compounds and titanium. A method of polycondensation under a catalyst such as a compound or a germanium compound, a reaction produced by transesterifying a dicarboxylic acid with an excess amount of glycol and a soft segment component in the presence of a catalyst such as an organic acid salt or an organic metal compound. A method of polycondensing a substance under a catalyst such as an antimony compound, a titanium compound or a germanium compound, an aliphatic polyether polyol is heated and mixed with a suitable aromatic polyester obtained from an aromatic dicarboxylic acid and a low molecular weight glycol component. A method of depolymerizing a part of the aromatic polyester and reacting it with an aliphatic polyether polyol to carry out polycondensation. A hard segment is prepared in advance, a soft segment component is added thereto, and the compound is randomly subjected to a transesterification reaction. Examples include a method of making a compound, a method of connecting a hard segment and a soft segment with a chain binder, and the like. In the case of a method in which a hard segment is created in advance and a soft segment component is added to the randomization by a transesterification reaction, the transesterification reaction between the hard segment and the soft segment is prevented from becoming excessive, that is, excessive randomization occurs. It is preferable to prepare a hard segment in advance so that the elastomeric property does not disappear, and then add a soft segment component having a high molecular weight in advance to randomize the segment. Specifically, the method described in Japanese Patent No. 4244067 is preferable.

<Other thermoplastic resins>
The resin constituting the base film 1 can contain the thermoplastic resin exemplified below as other components in addition to the above-mentioned thermoplastic polyester elastomer as long as the effect of the present invention is not impaired. Examples of the thermoplastic resin include thermoplastic resins such as polyolefin resins, polyamide resins, polycarbonate resins, homopolymers containing components derived from aromatic vinyl monomers, and copolymer resins, and the polyester poly of the present embodiment. Examples thereof include thermoplastic elastomers other than ether-type block copolymers, and poly (alkylene oxide) glycols that are not copolymerized with polyester-polyether-type block copolymers. Examples of the polyolefin-based resin include polyethylene, polypropylene, ethylene and propylene copolymers, and polymers of these with α-olefins having 4 to 10 carbon atoms. These polymers may be modified with an acid compound such as maleic anhydride. The polyolefin-based resin also contains a metal salt-based ionomer. The content of the other thermoplastic resin may be in the range of 0.1 part by mass or more and 10 parts by mass or less with respect to 100 parts by mass of the total amount of the thermoplastic polyester elastomer contained in the base film 1. preferable.

<Others>
The base film 1 can contain particles in the resin constituting the base film 1 from the viewpoint of handleability by imparting slipperiness (preventing blocking) as long as the effects of the present invention are not impaired. It is preferable that the particles are contained in the single layer when the base film 1 has a single layer structure, and in at least one outermost layer when the base film 1 has a laminated structure. The particles are not particularly limited, and inorganic particles and organic particles can be used alone or in combination. Examples of the inorganic particles include metal oxides such as silica, alumina, titania, and zirconia, barium sulfate, calcium carbonate, aluminum silicate, calcium phosphate, mica, kaolin, clay, and zeolite. Examples of the organic particles include cross-linked particles of polymethoxysilane-based compounds, cross-linked particles of polyethylene-based compounds, cross-linked particles of polystyrene-based compounds, cross-linked particles of acrylic compounds, cross-linked particles of polyurethane-based compounds, cross-linked particles of polyester-based compounds, and fluorine. Cross-linked particles of the system compound or a mixture thereof can be mentioned. The average particle size of the particles is not particularly limited, but is preferably in the range of 0.5 μm or more and 15.0 μm or less. The content of the particles may be in the range of 1 part by mass or more and 20 parts by mass or less with respect to 100 parts by mass of the total amount of the thermoplastic polyester elastomer and the thermoplastic resin contained in the base film 1. preferable.

Further, the resin constituting the base film 1 may contain various additives such as a colorant, a flame retardant, a plasticizer, an antistatic agent, and an antiaging agent as long as the effects of the present invention are not impaired. The content of these additives is not particularly limited, but the base film 1 should exhibit a desired function and should be kept within a range that does not lose flexibility.

<Bending elastic modulus of base film>
The base film 1 of the present embodiment has a flexural modulus at 23 ° C. when dynamic viscoelasticity is measured under the conditions of a frequency of 1 Hz and a heating rate of 0.5 ° C./min in a double-sided beam bending mode. G') is in the range of 10 MPa or more and 135 MPa or less. When the flexural modulus (G') of the base film 1 composed of the resin containing the thermoplastic polyester elastomer at 23 ° C. is within the above range, the base film 1 has a high melting point and appropriate flexibility. When the base film 1 is applied to the dicing tape, it is possible to suppress the generation of lint-like cutting chips during dicing and improve the pick-up property of the semiconductor chip. From the viewpoint of further improving both characteristics, the flexural modulus (G') of the base film 1 at 23 ° C. is preferably in the range of 17 MPa or more and 115 MPa or less.

The specific method for measuring the flexural modulus (G') of the base film 1 is as follows.

(1) Measuring equipment "DMA6100" (product name), a dynamic viscoelasticity measuring device manufactured by Hitachi High-Tech Science Corporation.

(2) Measurement sample / sample preparation method: Multiple samples of the following sample size are cut out from the original fabric of the film-formed base film 1, and these are laminated and the total thickness is 1.5 mm using a hot press machine. Laminated under pressure and close contact so that it becomes.-Sample size: 10 mm (width) x 50 mm (length) x 1.5 mm (thickness)

Here, in the samples of the plurality of base film 1 prepared in advance, the width direction of 10 mm in the sample size is the MD direction (flow direction) at the time of film formation of the base film 1, and the sample size is 50 mm. Center in the width direction when the base film 1 is processed into the original fabric of the dicing tape 10 so that the length direction matches the TD direction (direction perpendicular to the MD direction) at the time of film formation of the base film 1. It is cut out from the position corresponding to the part.

(3) Measurement conditions ・ Measurement mode: Double-sided beam bending ・ Measurement frequency: 1Hz
-Measurement temperature range: -40 to 40 ° C
・ Temperature rise rate: 0.5 ℃ / min ・ Measurement atmosphere gas: Nitrogen

The value of the storage elastic modulus at 23 ° C. in the dynamic viscoelasticity spectrum obtained by the above measuring method was taken as the bending elastic modulus (G') of the base film 1. When the flexural modulus (G') of the base film 1 at 23 ° C. is less than 10 MPa, the transportability and handleability of the base film 1 and the dicing tape 10 itself using the base film may deteriorate. be. Further, when a semiconductor device is manufactured from the dicing tape 10 using the base film 1, the semiconductor pushed up by a push-up pin from the second surface side of the base film 1 of the dicing tape 10 in the step of picking up the semiconductor chip. It follows the bending movement of the chip too much, and it becomes difficult to give a trigger for peeling from the adhesive layer 2 to the four end portions of the semiconductor chip, which may worsen the pick-up property. On the other hand, when the flexural modulus (G') of the base film 1 at 23 ° C. exceeds 135 MPa, in the step of picking up the semiconductor chip when manufacturing the semiconductor device with the dicing tape 10 using the base film 1. Even if the dicing tape 10 is pushed up by the push-up pin, the curvature of the dicing tape 10 is small and it is difficult to promote the peeling of the four end portions of the semiconductor chip from the adhesive layer 2, so that the push-up height needs to be further increased. As a result, the risk of cracking the semiconductor chip may increase.

<Thickness of base film>
The thickness of the base film 1 of the present embodiment is not particularly limited, but when applied to a dicing tape, for example, it is preferably in the range of 70 μm or more and 155 μm or less, and is preferably in the range of 80 μm or more and 100 μm or less. Is more preferable. When the base film 1 has a laminated structure, the thickness means the total thickness of the thicknesses of the layers. When the thickness of the base film 1 is less than 70 μm, when the semiconductor device is manufactured by the dicing tape 10 using the base film 1, the base film is partially cut by the dicing blade at the time of dicing. 1 may break in the subsequent expanding step. On the other hand, when the thickness of the base film 1 exceeds 155 μm, when the dicing tape 10 is produced using the base film 1 and wound up, a step mark leading to poor quality may occur in the winding core portion. In addition, the permeability of active energy rays such as ultraviolet rays (UV) required for curing the pressure-sensitive adhesive layer 2 may deteriorate. In addition, there is a risk that the warpage of the base film 1 due to the release of the residual stress during film formation will increase.

When the base film 1 of the present embodiment is a laminate composed of a plurality of layers of different resins and is applied as the base film of the dicing tape 10 described later, the first base film 1 is in contact with the pressure-sensitive adhesive layer 2. The thickness of the layer having a surface is made thicker than the depth at which the base film 1 is cut by the dicing blade, and the content of the soft segment (B) of the thermoplastic polyester elastomer contained in the layer is further increased to the other layer. It is preferable that the content of the soft segment (B) of the thermoplastic polyester elastomer contained in the film is smaller than the content of the soft segment (B). As a result, when the base film 1 is applied as the base film of the dicing tape 10, the resin crystal containing the thermoplastic polyester elastomer constituting the layer having the first surface in contact with the pressure-sensitive adhesive layer 2 in the base film 1. Since the melting point can be maintained higher, it is possible to stably suppress the generation of lint-like cutting chips during dicing of the base film 1.

<Crystal melting point of base film>
The crystal melting point of the base film 1 of the present embodiment means the crystal melting point of the base film 1 when the base film 1 is composed of only the same resin. When the base film 1 is a laminate composed of a plurality of layers of different resins, it means the crystal melting point of the resin constituting the layer having the first surface in contact with the pressure-sensitive adhesive layer. Specifically, when the base film 1 of the laminated body is applied to the base film of the dicing tape 10 described later, a layer having a first surface in contact with the pressure-sensitive adhesive layer 2 in the base film 1, that is, a dicing blade is used. It means the crystal melting point of the resin constituting the layer in which the cut is made. The crystal melting point of the base film 1 is preferably 160 ° C. or higher and 200 ° C. or lower, more preferably 170 ° C. or higher and 195 ° C. or lower. When the crystal melting point of the base film 1 is less than 160 ° C., when the semiconductor wafer is fully cut and diced with a dicer, lint-like cutting chips of the base film 1 are likely to be generated, and the crystals of the base film 1 are likely to be generated. When the melting point exceeds 200 ° C., the bending elasticity (G') of the base film 1 tends to increase. Therefore, when the dicing tape 10 is pushed up by the push-up pin in the pickup process, the bending property of the dicing tape 10 tends to increase. In the process of picking up the semiconductor chip, it becomes necessary to increase the push-up height, and as a result, the semiconductor chip becomes liable to crack.

When the base film 1 is a laminate composed of a plurality of layers of different resins and is applied as the base film of the dicing tape 10 described later, the base film 1 has a layer having a first surface in contact with the pressure-sensitive adhesive layer 2. It is preferable that the crystal melting point of the constituent resin is higher than the crystal melting point of the resin constituting the other layer. As a result, when the base film 1 is applied as the base film of the dicing tape 10 described later, it is possible to stably suppress the generation of lint-like cutting chips during dicing of the base film 1.

The crystal melting point of the resin can be measured using, for example, a differential thermal scanning calorimeter “DSC-8321” (product name) manufactured by Rigaku Corporation. Specifically, first, 10 mg of a resin sample is filled in an aluminum pan, the temperature is raised to 290 ° C. at a heating rate of 10 ° C./min under a nitrogen atmosphere, the temperature is maintained at the same temperature for 3 minutes, and then the aluminum pan is used. Is poured into liquid nitrogen and rapidly cooled. The quenched aluminum pan is set again in the differential thermal scanning calorimeter "DSC-8321", and the peak temperature of the endothermic peak that appears when the temperature is raised at a heating rate of 10 ° C./min is set as the crystal melting point of the resin. ..

<Elongation rate of base film>
The base film 1 of the present embodiment has an elongation rate of 300% or more and 700% or less in both the MD direction and the TD direction measured based on the method specified in JIS Z 0237 (2009). Is preferable. Here, the growth rate of 100% means that the length has been doubled from the original length. Further, as described above, the MD direction refers to the flow direction of the base film 1 during film formation, and the TD direction refers to the direction perpendicular to the MD direction. When the elongation rate of the base film 1 is less than 300%, the base film 1 tends to be hard, so that the expandability as a dicing tape and the pick-up property of the semiconductor chip may be inferior. On the other hand, when the elongation rate of the base film 1 exceeds 700%, the elongation and stickiness of the base film 1 become large, so that there is a possibility that thread-like cutting chips are likely to be generated during dicing.

<Ultraviolet transmittance of base film>
When the active energy ray-curable pressure-sensitive adhesive composition described later is applied as the pressure-sensitive adhesive layer 2, the base film 1 of the present embodiment needs to allow the active energy rays to pass through. In this case, specifically, for example, when ultraviolet rays (UV) are used as active energy rays, the parallel light transmittance of ultraviolet rays measured by the spectrophotometer of the base film 1 is 1% or more at a wavelength of 365 nm. It is preferably present, and more preferably 5% or more. When the parallel light transmittance of the ultraviolet rays of the base film 1 is less than 1%, even if the base film 1 side of the dicing tape 10 is irradiated with ultraviolet rays, the adhesive containing the active energy ray-curable pressure-sensitive adhesive composition is adhered. Since the ultraviolet rays do not sufficiently reach the agent layer 2, the adhesive layer 2 may not be sufficiently cured and shrunk, and the adhesive force to the adherend may not be sufficiently reduced. As a result, in the step of peeling the semiconductor chip or the semiconductor chip with the adhesive layer from the pressure-sensitive adhesive layer 2 (pickup step), the semiconductor chip or the semiconductor chip with the adhesive layer may be defective in picking up. When the parallel light transmittance of ultraviolet rays of the base film 1 is 1% or more, the pressure-sensitive adhesive layer 2 containing the active energy ray-curable pressure-sensitive adhesive composition can be sufficiently cured and shrunk, so that the adherend can be adhered. It is possible to sufficiently reduce the adhesive force against. As a result, the pick-up property of the semiconductor chip or the semiconductor chip with the adhesive layer becomes good.

<Method of forming a base film>
Examples of the film forming method of the base film 1 of the present embodiment include conventional manufacturing methods such as a casting method, a T-die method, an inflation method, and a calendar method. In particular, since shear stress is not applied when the base film 1 is formed, the orientation of the polymer molecules does not occur, and the base film 1 can be uniformly stretched without being divided when the base film 1 is expanded. Therefore, the casting method is used to form the film. It is preferable to do so.

Specifically, for example, the molten resin extruded at a temperature of 190 to 300 ° C. by an extruder such as a T-die after drying the pellets of the resin used as the material of the base film 1 as necessary is sandwiched. Pressurized or single-sided touch, the film is cooled by a single or multiple casting drums at a temperature of 30 to 70 ° C. to form a film without substantially stretching, and a non-stretched film is produced. At the time of casting, a base film 1 having a small thickness unevenness can be obtained by using an electrostatic adhesion method, an air knife method, a suction chamber method, or the like.

When the base film 1 is laminated, a conventional film laminating method such as a coextrusion method or a dry laminating method can be used as the film forming method for the base film 1.

Further, for the purpose of stabilizing the winding of the base film 1 during film formation and preventing blocking after film formation, the surfaces on the side opposite to the side where the adhesive layer 2 is provided (first surface) (second surface). ) Can be textured and wound up, or a method of laminating the base film 1 on a process release paper and winding it up can also be used. As the process release paper, a stretched polyester sheet usually called O-PET, a stretched polypropylene sheet usually called OPP, a process release paper made of paper, or an olefin resin or a silicone resin coated on the paper. A process release paper or the like can be preferably used. The process release paper may be peeled off when the base film 1 is formed into a dicing tape 10 and then the dicing tape 10 is subjected to, for example, a dicing step.

≪Dicing tape≫
The dicing tape 10 of the present invention includes the pressure-sensitive adhesive layer 2 for holding (temporarily fixing) the semiconductor wafer 30 on the first surface of the base film 1 described above. Further, the surface of the pressure-sensitive adhesive layer 2 of the dicing tape 10 may be provided with a base sheet (release liner) having releasability. As the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer 2, a conventionally known pressure-sensitive adhesive can be used as the pressure-sensitive adhesive for the dicing tape 10. The pressure-sensitive adhesive is not particularly limited, and for example, various pressure-sensitive adhesive compositions such as acrylic-based, silicone-based, polyester-based, polyvinyl acetate-based, polyurethane-based, and rubber-based adhesives are used. Among these, an acrylic pressure-sensitive adhesive composition can be preferably used from the viewpoint of versatility and practicality.

<Adhesive layer>
As the acrylic pressure-sensitive adhesive composition applied to the pressure-sensitive adhesive layer 2 of the present embodiment, known or customary active energy ray non-curable acrylic pressure-sensitive adhesive compositions and active energy ray-curable acrylic pressure-sensitive adhesive compositions are used. Both can be used. Here, the "active energy ray-curable acrylic pressure-sensitive adhesive composition" is crosslinked and cured by irradiating with active energy rays such as ultraviolet rays, visible rays, infrared rays, electron beams, β rays, and γ rays. It means a pressure-sensitive adhesive composition having a reduced adhesive strength, that is, an acrylic pressure-sensitive adhesive composition having a photosensitive carbon-carbon double bond. Further, the "active energy ray non-curable acrylic pressure-sensitive adhesive composition" is a pressure-sensitive adhesive composition whose adhesive strength does not decrease even when irradiated with active energy rays, that is, a photosensitive carbon-carbon double bond. It means an acrylic pressure-sensitive adhesive composition that does not exist. In the process of picking up a semiconductor chip, it is preferable to use an active energy ray-curable acrylic pressure-sensitive adhesive composition from the viewpoint of improving the pick-up success rate (improvement of pick-up property) that the semiconductor chip can be easily picked up without being damaged.

(Active energy ray non-curable acrylic pressure-sensitive adhesive composition)
The active energy ray non-curable acrylic pressure-sensitive adhesive composition typically comprises a so-called general acrylic pressure-sensitive adhesive comprising an acrylic pressure-sensitive adhesive polymer having a functional group and a cross-linking agent that reacts with the functional group. Examples thereof include, but are not limited to, the agent composition. The functional group here means a heat-reactive functional group. An example of such a functional group is a functional group that thermally reacts with an active hydrogen group such as a hydroxyl group, a carboxyl group and an amino group, and an active hydrogen group such as a glycidyl group. The active hydrogen group refers to a functional group having an element other than carbon, such as nitrogen, oxygen or sulfur, and hydrogen directly bonded to the element.

[Acrylic adhesive polymer with functional groups]
The main skeleton of the acrylic adhesive polymer having the functional group is composed of a copolymer containing a (meth) acrylic acid alkyl ester monomer, an active hydrogen group-containing monomer, or a glycidyl group-containing monomer. Will be done. Examples of the (meth) acrylic acid alkyl ester monomer include hexyl (meth) acrylate having 6 to 18 carbon atoms, n-octyl (meth) acrylate, isooctyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and nonyl (meth). ) Acrylate, Isononyl (meth) acrylate, Decyl (meth) acrylate, Isodecyl (meth) acrylate, Undecyl (meth) acrylate, Dodecyl (meth) acrylate, Tridecyl (meth) acrylate, Tetradecyl (meth) acrylate, Pentadecyl (meth) acrylate , Hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate, or pentyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, which is a monomer having 5 or less carbon atoms. , Ethyl (meth) acrylate, methyl (meth) acrylate and the like. Examples of the active hydrogen group-containing monomer include hydroxyl groups such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and 6-hydroxyhexyl (meth) acrylate. Monomer containing monomer, carboxyl group-containing monomer such as (meth) acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, isocrotonic acid, acid anhydride group-containing single amount such as maleic anhydride, itaconic anhydride Body, (meth) acrylamide, N, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylol propane (meth) acrylamide, N-methoxymethyl (meth) acrylamide , N-Butoxymethyl (meth) acrylamide and other amide-based monomers; (meth) acrylate aminoethyl, (meth) acrylate N, N-dimethylaminoethyl, (meth) acrylate t-butylaminoethyl and other amino groups. Examples include contained monomers. These active hydrogen group-containing monomer components may be used alone or in combination of two or more. Examples of the glycidyl group-containing monomer include glycidyl (meth) acrylate. The content of the heat-reactive functional group is not particularly limited, but is preferably in the range of 0.5% by mass or more and 50% by mass or less with respect to the total amount of the copolymerized monomer components.

Suitable copolymers obtained by copolymerizing the above-mentioned monomers include, specifically, a copolymer of 2-ethylhexyl acrylate and acrylic acid, and 2-ethylhexyl acrylate and 2-hydroxyethyl acrylate. Copolymer, ternary copolymer of 2-ethylhexyl acrylate, methacrylic acid and 2-hydroxyethyl acrylate, copolymer of n-butyl acrylate and acrylate, n-butyl acrylate and 2 acrylate -A copolymer with hydroxyethyl, a ternary copolymer of n-butyl acrylate, methacrylic acid and 2-hydroxyethyl acrylate, and the like can be mentioned, but the present invention is not particularly limited thereto.

The acrylic adhesive polymer having the functional group may contain other copolymerized monomer components, if necessary, for the purpose of cohesive force, heat resistance and the like. Specific examples of such other copolymerized monomer components include cyano group-containing monomers such as (meth) acrylonitrile, and olefin-based monomers such as ethylene, propylene, isoprene, butadiene, and isobutylene. , Styrene-based monomers such as styrene, α-methylstyrene, vinyltoluene, vinyl ester-based monomers such as vinyl acetate and vinyl propionate, vinyl ether-based monomers such as methylvinyl ether and ethylvinyl ether, vinyl chloride, chloride. Halogen atom-containing monomers such as vinylidene, alkoxy group-containing monomers such as (meth) methoxyethyl acrylate, ethoxyethyl (meth) acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N- Vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazin, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholin, N-vinylcaprolactam, N- ( Meta) Examples thereof include monomers having a nitrogen atom-containing ring such as acryloylmorpholine. These other copolymerized monomer components may be used alone or in combination of two or more. The acrylic adhesive polymer having the functional group preferably has a glass transition temperature (Tg) in the range of −70 ° C. or higher and 15 ° C. or lower, and more preferably in the range of −60 ° C. or higher and −10 ° C. or lower. ..

[Crosslinking agent]
The active energy ray non-curable acrylic pressure-sensitive adhesive composition of the present embodiment further contains a cross-linking agent for increasing the molecular weight of the acrylic pressure-sensitive adhesive polymer having the above-mentioned functional groups. The cross-linking agent is not particularly limited, and a known cross-linking agent having a functional group capable of reacting with a hydroxyl group, a carboxyl group, a glycidyl group and the like, which are functional groups of the acrylic adhesive polymer, is used. Can be done. Specifically, for example, it contains a polyisocyanate-based cross-linking agent, an epoxy-based cross-linking agent, an aziridine-based cross-linking agent, a melamine resin-based cross-linking agent, a urea resin-based cross-linking agent, an acid anhydrous compound-based cross-linking agent, a polyamine-based cross-linking agent, and a carboxyl group. Examples thereof include polymer-based cross-linking agents. Among these, it is preferable to use a polyisocyanate-based cross-linking agent or an epoxy-based cross-linking agent from the viewpoint of reactivity and versatility. These cross-linking agents may be used alone or in combination of two or more. The blending amount of the cross-linking agent is preferably in the range of 0.01 parts by mass or more and 15 parts by mass or less with respect to 100 parts by mass of the solid content of the acrylic adhesive polymer.

Examples of the polyisocyanate-based cross-linking agent include a polyisocyanate compound having an isocyanurate ring, an adduct polyisocyanate compound obtained by reacting trimethylolpropane with hexamethylene diisocyanate, and an adduct obtained by reacting trimethylolpropane with tolylene diisocyanate. Examples thereof include a polyisocyanate compound, an adduct polyisocyanate compound obtained by reacting trimethylol propane with xylylene diisocyanate, and an adduct polyisocyanate compound obtained by reacting trimethylol propane with isophorone diisocyanate. These can be used alone or in combination of two or more.

Examples of the epoxy-based cross-linking agent include bisphenol A / epichlorohydrin type epoxy resin, ethylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, glycerin diglycidyl ether, glycerin triglycidyl ether, and 1,6-hexanediol diglycidyl ether. , Trimethylol propanetriglycidyl ether, sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl erythritol, diglycerol polyglycidyl ether, 1,3'-bis (N, N-diglycidyl aminomethyl) cyclohexane, N , N, N', N'-tetraglycidyl-m-xylene diamine and the like. These can be used alone or in combination of two or more.

The aging conditions for reacting the cross-linking agent with the acrylic pressure-sensitive adhesive polymer having a functional group after forming the pressure-sensitive adhesive layer 2 with the active energy ray non-curable resin composition are not particularly limited. However, for example, the temperature may be appropriately set in the range of 23 ° C. or higher and 80 ° C. or lower, and the time may be appropriately set in the range of 24 hours or longer and 168 hours or lower.

[others]
The active energy ray non-curable acrylic pressure-sensitive adhesive composition of the present embodiment is, if necessary, a tackifier, a filler, an antistatic agent, a colorant, as long as the effect of the present invention is not impaired. , Flame retardants, antistatic agents, surfactants, silane coupling agents, leveling agents and the like may be added.

(Active energy ray-curable acrylic pressure-sensitive adhesive composition)
The active energy ray-curable acrylic pressure-sensitive adhesive composition typically includes an acrylic pressure-sensitive adhesive polymer having a photosensitive carbon-carbon double bond and a functional group, a photopolymerization initiator, and the functional group. A pressure-sensitive adhesive composition (A) containing a cross-linking agent that reacts with, or an acrylic pressure-sensitive adhesive polymer having a functional group, an active energy ray-curable compound, a photopolymerization initiator, and a cross-linking that reacts with the functional group. Examples thereof include the pressure-sensitive adhesive composition (B) containing the agent, but the present invention is not particularly limited thereto. Above all, the pressure-sensitive adhesive composition (A) of the former aspect is preferable from the viewpoint of suppressing adhesive residue on the semiconductor wafer.

(Adhesive composition (A))
[Acrylic adhesive polymer with carbon-carbon double bond and functional group]
As the acrylic pressure-sensitive adhesive polymer having a carbon-carbon double bond and a functional group in the pressure-sensitive adhesive composition (A), one having a carbon-carbon double bond in the molecular side chain is used. The method for producing an acrylic adhesive polymer having a carbon-carbon double bond is not particularly limited, but is usually obtained by copolymerizing a (meth) acrylic acid ester with a functional group-containing unsaturated compound. Examples thereof include a method of obtaining a copolymer and subjecting it to an addition reaction with a functional group capable of an addition reaction with the functional group of the copolymer and a compound having a carbon-carbon double bond. Here, as the above-mentioned copolymer before the addition reaction of the functional group and the compound having a carbon-carbon double bond, the acrylic having a functional group is described in the above-mentioned description of the active energy ray non-curable acrylic pressure-sensitive adhesive composition. The same ones exemplified as the system adhesive polymer can be used.

The functional group here means a heat-reactive functional group that can coexist with a carbon-carbon double bond. An example of such a functional group is a functional group that thermally reacts with an active hydrogen group such as a hydroxyl group, a carboxyl group and an amino group, and an active hydrogen group such as a glycidyl group. The active hydrogen group refers to a functional group having an element other than carbon, such as nitrogen, oxygen or sulfur, and hydrogen directly bonded to the element.

As the addition reaction, for example, an isocyanate compound having a (meth) acryloyloxy group in the side chain of the copolymer (acrylic adhesive polymer) (for example, 2-methacryloyloxyethyl isocyanate, 4-methacryloyl) is used. A method of reacting with oxy-n-butyl isocyanate, etc.), a method of reacting a carboxyl group in the side chain of the copolymer with glycidyl (meth) acrylate, or a method of reacting the glycidyl group in the side chain of the copolymer (meth). Meta) There is a method of reacting with acrylic acid. When these reactions are carried out, the acrylic adhesive polymer is crosslinked with a cross-linking agent such as a polyisocyanate-based cross-linking agent or an epoxy-based cross-linking agent, and a hydroxyl group or a carboxyl group is used to further increase the molecular weight. It is preferable that a functional group such as a group or a glycidyl group remains. For example, when an isocyanate compound having a (meth) acryloyloxy group is reacted with a copolymer having a hydroxyl group in the side chain, (meth) with respect to the hydroxyl group (-OH) in the side chain of the copolymer. The compounding ratio of both may be adjusted so that the equivalent ratio [(NCO) / (OH)] of the isocyanate group (-NCO) of the isocyanate compound having an acryloyloxy group is less than 1.0. In this way, an acrylic adhesive polymer having an active energy ray-reactive group (carbon-carbon double bond) such as a (meth) acryloyloxy group and a functional group can be obtained.

In the above addition reaction, it is preferable to use a polymerization inhibitor so that the active energy ray reactivity of the carbon-carbon double bond is maintained. As such a polymerization inhibitor, a quinone-based polymerization inhibitor such as hydroquinone / monomethyl ether is preferable. The amount of the polymerization inhibitor is not particularly limited, but is usually preferably in the range of 0.01 parts by mass or more and 0.1 parts by mass or less with respect to the total amount of the base polymer and the radiation-reactive compound.

The acrylic adhesive polymer having a carbon-carbon double bond and a functional group (sometimes referred to as an active energy ray-curable acrylic adhesive polymer) preferably has a weight average molecular weight in the range of 100,000 or more and 2 million or less. Has Mw. When the weight average molecular weight Mw of the acrylic adhesive polymer is less than 100,000, a high-viscosity active energy ray-curable resin composition having a viscosity of several thousand cP or more and tens of thousands of cP or less in consideration of coatability and the like. It is difficult and unfavorable to obtain a solution. In addition, the cohesive force of the pressure-sensitive adhesive layer 2 before irradiation with active energy rays becomes small, and when dicing a semiconductor wafer, the semiconductor chip tends to be displaced, which may make image recognition difficult. On the other hand, when the weight average molecular weight Mw exceeds 2 million, there is no particular problem in terms of the characteristics as an adhesive, but it is difficult to mass-produce an acrylic adhesive polymer. The sex polymer may gel, which is not preferable. The weight average molecular weight Mw of the acrylic adhesive polymer is more preferably 300,000 or more and 1.5 million or less. Here, the weight average molecular weight Mw means a standard polystyrene equivalent value measured by gel permeation chromatography.

The carbon-carbon double bond content of the acrylic adhesive polymer having a carbon-carbon double bond and a functional group is such that a sufficient effect of reducing the adhesive force can be obtained in the pressure-sensitive adhesive layer 2 after irradiation with active energy rays. It may be sufficient, and it is not unique depending on the usage conditions such as the irradiation amount of active energy rays, but the carbon-carbon double bond content is in the range of 0.10 meq / g or more and 2.00 meq / g or less. It is preferably in the range of 0.50 meq / g or more and 1.50 meq / g or less. When the carbon-carbon double bond content is less than 0.10 meq / g, the effect of reducing the adhesive force in the pressure-sensitive adhesive layer 2 after irradiation with active energy rays is reduced, and the pick-up failure of the semiconductor chip may increase. On the other hand, when the carbon-carbon double bond content exceeds 2.00 meq / g, the fluidity of the pressure-sensitive adhesive in the pressure-sensitive adhesive layer 2 after irradiation with active energy rays becomes insufficient, and the dicing tape 10 or the dicing die bond film is used. There is a possibility that the gap between the semiconductor chips after the expansion of 20 is not sufficiently widened, and it becomes difficult to recognize the image of each semiconductor chip at the time of picking up. Further, depending on the copolymerization composition of the acrylic adhesive polymer, gelation may easily occur during polymerization or reaction during synthesis, which may make synthesis difficult. When confirming the carbon-carbon double bond content of the acrylic adhesive polymer, the carbon-carbon double bond content can be calculated by measuring the iodine value of the acrylic adhesive polymer.

Further, in the acrylic adhesive polymer having a carbon-carbon double bond and a functional group, as described above, the acrylic adhesive polymer is crosslinked with a cross-linking agent such as a polyisocyanate-based cross-linking agent or an epoxy-based cross-linking agent. It is preferable to leave functional groups such as a hydroxyl group, a carboxyl group and a glycidyl group remaining in order to further increase the polymer weight. Of these, a hydrosyl group and a carboxyl group are more preferable. The hydroxyl value of the acrylic adhesive polymer having a carbon-carbon double bond and a functional group is not particularly limited, but is preferably in the range of 5 mgKOH / g or more and 100 mgKOH / g or less. The acid value of the acrylic adhesive polymer having a carbon-carbon double bond and a functional group is not particularly limited, but is preferably in the range of 0.5 mgKOH / g or more and 30 mgKOH / g or less. When the hydroxyl value and the acid value of the acrylic pressure-sensitive adhesive polymer having a carbon-carbon double bond and a functional group are within the above ranges, the adhesive strength of the pressure-sensitive adhesive layer 2 after irradiation with active energy rays is stably reduced. Therefore, as a result, it is possible to further reduce pick-up defects of the semiconductor chip, which is preferable.

[Photopolymerization initiator]
The active energy ray-curable acrylic pressure-sensitive adhesive composition (adhesive composition (A)) of the present embodiment contains a photopolymerization initiator that generates radicals by irradiation with active energy rays. The photopolymerization initiator senses the irradiation of the active energy ray-curable acrylic pressure-sensitive adhesive composition with active energy rays to generate radicals, and the carbon-carbon double of the active energy ray-curable acrylic pressure-sensitive adhesive polymer. Initiate the bond cross-linking reaction.

The photopolymerization initiator is not particularly limited, and conventionally known photopolymerization initiators can be used. For example, an alkylphenone-based radical polymerization initiator, an acylphosphine oxide-based radical polymerization initiator, an oxime ester-based radical polymerization initiator, and the like can be mentioned. Examples of the alkylphenone-based radical polymerization initiator include a benzylmethyl ketal radical polymerization initiator, an α-hydroxyalkylphenone-based radical polymerization initiator, an aminoalkylphenone-based radical polymerization initiator, and the like. Specific examples of the benzylmethyl ketal radical polymerization initiator include 2,2'-dimethoxy-1,2-diphenylethane-1-one (for example, trade name Omnirad651, manufactured by IGM Resins B.V.). ) Etc. can be mentioned. Specific examples of the α-hydroxyalkylphenone-based radical polymerization initiator include 2-hydroxy-2-methyl-1-phenylpropan-1-one (trade name: Omnirad 1173, manufactured by IGM Resins B.V.). , 1-Hydroxycyclohexylphenylketone (trade name: Omnirad184, manufactured by IGM Resins B.V.), 1- [4- (2-hydroxyethoxy) phenyl] -2-hydroxy-2-methyl-1-propane-1- On (trade name: Omnirad 2959, manufactured by IGM Resins B.V.), 2-hydroxy-1- {4- [4- (2-hydroxy-2-methylpropionyl) benzyl] phenyl} -2-methylpropane-1- On (trade name: Omnirad127, manufactured by IGM Resins B.V.) and the like can be mentioned. Specific examples of the aminoalkylphenone-based radical polymerization initiator include 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropane-1-one (trade names: Omnirad 907, IGM Resins B.V.). (Manufactured by) or 2-benzylmethyl 2-dimethylamino-1- (4-morpholinophenyl) -1-butanone (trade name: Omnirad 369, manufactured by IGM Resins B.V.) and the like. Specific examples of the acylphosphine oxide-based radical polymerization initiator include 2,4,6-trimethylbenzoyl-diphenylphosphine oxide (trade name: Omnirad TPO, manufactured by IGM Resins B.V.) and bis (2,4). , 6-trimethylbenzoyl) -phenylphosphine oxide (trade name: Omnirad 819, manufactured by IGM Resins B.V.), as an oxime ester-based radical polymerization initiator, (2E) -2- (benzoyloxyimino) -1- [ 4- (Phenylthio) phenyl] octane-1-one (trade name: OmniradOXE-01, manufactured by IGM Resins B.V.) and the like can be mentioned. These photopolymerization initiators may be used alone or in combination of two or more.

The amount of the photopolymerization initiator added may be in the range of 0.1 parts by mass or more and 10.0 parts by mass or less with respect to 100 parts by mass of the solid content of the active energy ray-curable acrylic adhesive polymer. preferable. When the amount of the photopolymerization initiator added is less than 0.1 parts by mass, the photoreactivity to the active energy rays is not sufficient, so that the photoradical cross-linking reaction of the acrylic adhesive polymer even when irradiated with the active energy rays As a result, the effect of reducing the adhesive force in the pressure-sensitive adhesive layer 2 after irradiation with active energy rays is reduced, and there is a possibility that pick-up defects of the semiconductor chip will increase. On the other hand, when the amount of the photopolymerization initiator added exceeds 10.0 parts by mass, the effect is saturated and it is not preferable from the viewpoint of economic efficiency. Further, depending on the type of the photopolymerization initiator, the pressure-sensitive adhesive layer 2 may turn yellow and the appearance may be poor.

Further, as a sensitizer for such a photopolymerization initiator, a compound such as dimethylaminoethyl methacrylate and 4-dimethylaminobenzoate isoamyl may be added to the active energy ray-curable acrylic pressure-sensitive adhesive composition.

[Crosslinking agent]
The active energy ray-curable acrylic pressure-sensitive adhesive composition (adhesive composition (A)) of the present embodiment further contains a cross-linking agent for increasing the molecular weight of the above-mentioned active energy ray-curable acrylic pressure-sensitive adhesive polymer. contains. As the cross-linking agent, the same cross-linking agent as exemplified in the description of the above-mentioned active energy ray non-curable acrylic pressure-sensitive adhesive composition can be used. Further, the same applies to the blending amount of the cross-linking agent and the aging conditions for reacting the cross-linking agent with the active energy ray-curable acrylic adhesive polymer.

[others]
The active energy ray-curable acrylic pressure-sensitive adhesive composition (pressure-sensitive adhesive composition (A)) of the present embodiment is, if necessary, a polyfunctional acrylic monomer, as long as the effect of the present invention is not impaired. Additives such as polyfunctional acrylic oligomers, tackifiers, fillers, antiaging agents, colorants, flame retardants, antistatic agents, surfactants, silane coupling agents, leveling agents and the like may be added.

(Adhesive composition (B))
[Acrylic adhesive polymer with functional groups]
The acrylic adhesive polymer having a functional group in the pressure-sensitive adhesive composition (B) is exemplified as the acrylic pressure-sensitive adhesive polymer having a functional group in the description of the above-mentioned active energy ray non-curable acrylic pressure-sensitive adhesive composition. The same thing can be used.

[Active energy ray-curable compound]
The active energy ray-curable compound of the pressure-sensitive adhesive composition (B) is, for example, a low molecular weight compound having at least two carbon-carbon double bonds in the molecule, which can be three-dimensionally networked by irradiation with active energy rays. Is widely used. Specific examples of the active energy ray-curable compound include trimethylolpropanetri (meth) acrylate, pentaerythritol tri (meth) acrylate, tetraethylene glycol di (meth) acrylate, and 1,6-hexanediol di. Esterates of (meth) acrylic acid and polyhydric alcohols such as (meth) acrylates, neopentyl glycol di (meth acrylates, dipentaerythritol hexa (meth) acrylates; 2-propenyl-di-3-butenyl cyanurate, Examples thereof include isocyanurates such as 2-hydroxyethylbis (2-acrylicoxyethyl) isocyanurate and tris (2-methacryloxyethyl) isocyanurate, or isocyanurate compounds. These active energy ray-curable compounds are used alone. It may be used, or two or more kinds may be used in combination.

Further, as the active energy ray-curable compound, in addition to the above-mentioned compounds, active energy ray-curable oligomers such as epoxy acrylate-based oligomers, urethane acrylate-based oligomers, and polyester acrylate-based oligomers can also be used. Epoxy acrylates are synthesized by an addition reaction between an epoxy compound and (meth) acrylic acid. Urethane acrylate is synthesized, for example, by reacting an isocyanate group remaining at the terminal with a hydroxy group-containing (meth) acrylate with an addition reaction product of a polyol and a polyisocyanate, and introducing a (meth) acrylic group into the molecular terminal. Polyester acrylates are synthesized by the reaction of polyester polyols with (meth) acrylic acid. The active energy ray-curable oligomer preferably has three or more carbon-carbon double bonds in the molecule from the viewpoint of the effect of reducing the adhesive force of the pressure-sensitive adhesive layer 2 after irradiation with the active energy ray. These active energy ray-curable oligomers may be used alone or in combination of two or more.

The weight average molecular weight Mw of the active energy ray-curable oligomer is not particularly limited, but is preferably in the range of 100 or more and 30,000 or less, and the adhesive layer 2 after suppressing contamination of the semiconductor chip and irradiating with the active energy ray. From the viewpoint of both the effect of reducing the adhesive strength, the range is more preferably 500 or more and 6,000 or less.

The hydroxyl value of the active energy ray-curable oligomer is not particularly limited, but is preferably 3 mgKOH / g or less when the dicing tape 10 is attached and used immediately after grinding the semiconductor wafer. That is, the surface of the semiconductor wafer immediately after grinding is extremely active, and the smaller the number of hydroxyl groups (the hydroxyl groups of the active energy ray-curable oligomer) bonded to the active atoms on the active surface in the pressure-sensitive adhesive layer 2, the more active energy rays. Since it is suppressed that the adhesive force of the pressure-sensitive adhesive layer 2 after irradiation becomes excessively large, it becomes easy to peel off the semiconductor chip from the pressure-sensitive adhesive layer 2. The hydroxyl value of the active energy ray-curable oligomer is more preferably 0 mgKOH / g.

The content of the active energy ray-curable compound is in the range of 5 parts by mass or more and 500 parts by mass or less, preferably 50 parts by mass or more and 180 parts by mass or less with respect to 100 parts by mass of the acrylic adhesive polymer having a functional group. It is preferable to have. When the content of the active energy ray-curable compound is within the above range, the adhesive strength of the pressure-sensitive adhesive layer 2 is appropriately lowered after irradiation with the active energy ray, and the pickup is facilitated without damaging the semiconductor chip. Can be done.

[Photopolymerization initiator]
The active energy ray-curable acrylic pressure-sensitive adhesive composition (adhesive composition (B)) of the present embodiment contains a photopolymerization initiator that generates radicals by irradiation with active energy rays. As the photopolymerization initiator, the same one as exemplified in the description of the above-mentioned active energy ray-curable acrylic pressure-sensitive adhesive composition (pressure-sensitive adhesive composition (A)) can be used. Further, the same may be applied to the amount of the photopolymerization initiator added.

[Crosslinking agent]
The active energy ray-curable acrylic pressure-sensitive adhesive composition (adhesive composition (B)) of the present embodiment further contains a cross-linking agent for increasing the molecular weight of the above-mentioned active energy ray-curable acrylic pressure-sensitive adhesive polymer. contains. As the cross-linking agent, the same cross-linking agent as exemplified in the description of the above-mentioned active energy ray non-curable acrylic pressure-sensitive adhesive composition can be used. Further, the same applies to the blending amount of the cross-linking agent and the aging conditions for reacting the cross-linking agent with the active energy ray-curable acrylic adhesive polymer.

[others]
The active energy ray-curable acrylic pressure-sensitive adhesive composition of the present embodiment (the pressure-sensitive adhesive composition (B) is, if necessary, an antistatic agent and a filler, as long as the effects of the present invention are not impaired. , Anti-aging agents, colorants, flame-retardant agents, antistatic agents, surfactants, silane coupling agents, leveling agents and the like may be added.

(Thickness of adhesive layer)
The thickness of the pressure-sensitive adhesive layer 2 of the present embodiment is not particularly limited, but is preferably in the range of 3 μm or more and 50 μm or less, and more preferably in the range of 5 μm or more and 20 μm or less. If the thickness of the pressure-sensitive adhesive layer 2 is less than 3 μm, the adhesive strength of the dicing tape 10 may be excessively reduced. In this case, for example, when dicing a semiconductor wafer, the dicing tape 10 cannot sufficiently hold the semiconductor chip, and the semiconductor chip may scatter. Further, when used as a dicing die bond film, poor adhesion between the pressure-sensitive adhesive layer 2 and the die bond film 3 may occur. On the other hand, when the thickness of the pressure-sensitive adhesive layer 2 exceeds 50 μm, vibration during dicing is easily transmitted to the pressure-sensitive adhesive layer 2, the vibration width becomes large, and the semiconductor wafer is displaced from the reference position during dicing of the semiconductor wafer. There is a risk. In this case, the semiconductor chip may be chipped (chipping), or the size of each semiconductor chip may be different.

<Anchor coat layer>
In the dicing tape 10 of the present embodiment, the base film 1 is placed between the base film 1 and the pressure-sensitive adhesive layer 2 depending on the production conditions of the dicing tape 10 and the usage conditions of the dicing tape 10 after production. An anchor coat layer may be provided according to the composition. By providing the anchor coat layer, the adhesive force between the base film 1 and the pressure-sensitive adhesive layer 2 is improved.

<Peeling liner>
Further, a release liner may be provided on the surface side (one surface side) of the pressure-sensitive adhesive layer 2 opposite to that of the base film 1 if necessary. Those that can be used as the release liner are not particularly limited, and examples thereof include synthetic resins such as polyethylene, polypropylene, and polyethylene terephthalate, and papers and the like. Further, the surface of the release liner may be subjected to a peeling treatment with a silicone-based peeling treatment agent, a long-chain alkyl-based peeling treatment agent, a fluorine-based peeling treatment agent, or the like in order to enhance the peelability of the pressure-sensitive adhesive layer 2. The thickness of the release liner is not particularly limited, but one having a thickness in the range of 10 μm or more and 200 μm or less can be preferably used.

<Manufacturing method of dicing tape>
FIG. 4 is a flowchart illustrating a method for manufacturing the dicing tape 10. First, a release liner is prepared (step S101: release liner preparation step). Next, a coating solution (coating solution for forming the pressure-sensitive adhesive layer) for the pressure-sensitive adhesive layer 2, which is a material for forming the pressure-sensitive adhesive layer 2, is prepared (step S102: coating solution preparation step). The coating solution can be prepared, for example, by uniformly mixing and stirring an acrylic pressure-sensitive adhesive polymer, a cross-linking agent, and a diluting solvent, which are constituents of the pressure-sensitive adhesive layer 2. As the solvent, for example, a general-purpose organic solvent such as toluene or ethyl acetate can be used.

Then, using the coating solution for the pressure-sensitive adhesive layer 2 prepared in step S102, the coating solution is applied on the peeling-treated surface of the release liner and dried to form the pressure-sensitive adhesive layer 2 having a predetermined thickness (step). 103: Adhesive layer forming step). The coating method is not particularly limited, and for example, a die coater, a comma coater (registered trademark), a gravure coater, a roll coater, a reverse coater, or the like can be used for coating. The drying conditions are not particularly limited, but for example, the drying temperature is preferably in the range of 80 ° C. or higher and 150 ° C. or lower, and the drying time is preferably in the range of 0.5 minutes or longer and 5 minutes or shorter. Subsequently, the base film 1 is prepared (step S104: base film preparation step). Then, the base film 1 is bonded onto the pressure-sensitive adhesive layer 2 formed on the release liner (step S105: base film bonding step). Here, when a base film of a laminated body composed of a plurality of layers of different resins is used as the base film 1, the surface on the layer side (first) made of a resin having a crystal melting point in the range of 160 ° C. or higher and 200 ° C. or lower. The surface) is bonded onto the pressure-sensitive adhesive layer 2. Finally, the formed pressure-sensitive adhesive layer 2 is aged for 72 hours in an environment of, for example, 40 ° C., and the acrylic pressure-sensitive adhesive polymer is reacted with a cross-linking agent to crosslink and cure (step S106: thermosetting step). Through the above steps, the dicing tape 10 provided with the pressure-sensitive adhesive layer 2 and the release liner on the base film 1 can be manufactured in this order from the base film side. In the present invention, the laminate provided with the release liner on the pressure-sensitive adhesive layer 2 may also be referred to as a dicing tape 10.

As a method of forming the pressure-sensitive adhesive layer 3 on the base film 1, a coating solution for the pressure-sensitive adhesive layer 2 is applied on a release liner and dried, and then the base material is placed on the pressure-sensitive adhesive layer 2. Although the method of laminating the film 1 is exemplified, a method of directly applying the coating solution for the pressure-sensitive adhesive layer 2 on the base film 1 and drying it may be used. From the viewpoint of stable production, the former method is preferably used.

The dicing tape 10 of the present embodiment may be wound in a roll shape or may be a form in which wide sheets are laminated. Further, the dicing tape 10 in these forms may be in the form of a sheet or a tape formed by cutting the dicing tape 10 into a predetermined size.

≪Dicing die bond film≫
The dicing tape 10 of the present embodiment is in the form of a dicing die bond film 20 in which a dicing film (adhesive layer) 3 is peelably adhered and laminated on the adhesive layer 2 of the dicing tape 10 in the semiconductor manufacturing process. It can also be used. The die bond film (adhesive layer) 3 is for adhering and connecting a semiconductor chip that has been separated after dicing to a lead frame or a wiring board. Further, when the semiconductor chips are laminated, it also serves as an adhesive layer between the semiconductor chips. Hereinafter, an example of the dicing film (adhesive layer) 3 in the case where the dicing tape 10 of the present embodiment is used in the form of the dicing die bond film 20 will be shown, but the present invention is not particularly limited to this example.

<Die bond film (adhesive layer)>
The die bond film (adhesive layer) 3 is a layer made of a thermosetting adhesive composition that is cured by heat. The adhesive composition is not particularly limited, and conventionally known materials can be used. As an example of a preferable embodiment of the adhesive composition, for example, a glycidyl group-containing (meth) acrylic acid ester copolymer as a thermoplastic resin, an epoxy resin as a thermosetting resin, and a curing agent for an epoxy resin as a curing agent are used. Examples thereof include thermosetting resin compositions containing the same. The die bond film (adhesive layer) 3 having such a composition has excellent adhesiveness between semiconductor chips / support substrates and between semiconductor chips / semiconductor chips, and can also impart electrode embedding property and / or wire embedding property. Moreover, in the die bonding step, it is preferable because it can be bonded at a low temperature, excellent curing can be obtained in a short time, and it has excellent reliability after being molded with a sealant.

(Glysidyl group-containing (meth) acrylic acid ester copolymer)
The glycidyl group-containing (meth) acrylic acid ester copolymer contains, as a copolymer unit, at least a (meth) acrylic acid alkyl ester having an alkyl group having 1 to 8 carbon atoms and glycidyl (meth) acrylic acid. Is preferable. The above-mentioned copolymer unit of glycidyl (meth) acrylate is 0.5% by mass or more and 6.0% by mass in the total amount of the glycidyl group-containing (meth) acrylic acid ester copolymer from the viewpoint of ensuring proper adhesive strength. It is preferable to include it in the following range. Further, the glycidyl group-containing (meth) acrylic acid ester copolymer contains other monomers such as styrene and acrylonitrile as a copolymer unit from the viewpoint of adjusting the glass transition temperature (Tg), if necessary. You may.

The glass transition temperature (Tg) of the glycidyl group-containing (meth) acrylic acid ester copolymer is preferably in the range of −50 ° C. or higher and 30 ° C. or lower, and the handleability as a die bond film is improved (tackiness). From the viewpoint of suppression), it is more preferable that the temperature is in the range of −10 ° C. or higher and 30 ° C. or lower. In order to set the glycidyl group-containing (meth) acrylic acid ester copolymer to such a glass transition temperature, the (meth) acrylic acid alkyl ester having an alkyl group having 1 to 8 carbon atoms is ethyl (meth) acrylate. And / or butyl (meth) acrylates are preferred.

The weight average molecular weight Mw of the glycidyl group-containing (meth) acrylic acid ester copolymer is preferably in the range of 100,000 or more and 3 million or less, and more preferably in the range of 500,000 or more and 2 million or less. When the weight average molecular weight Mw is within the above range, the adhesive strength, heat resistance, and flowability are likely to be appropriate. Here, the weight average molecular weight Mw means a standard polystyrene equivalent value measured by gel permeation chromatography.

The content ratio of the glycidyl group-containing (meth) acrylic acid ester copolymer in the die bond film (adhesive layer) 3 is preferably in the range of 50% by mass or more and 95% by mass or less, and is 50% by mass or more and 90% by mass. It is more preferably in the range of% or less.

(Epoxy resin)
The epoxy resin is not particularly limited, but for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin, alkylphenol. Novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak type epoxy resin, diglycidyl ether of biphenol, diglycidyl ether of naphthalenediol, diglycidyl ether of phenols, diglycidyl ether of alcohols Examples thereof include isomers, bifunctional epoxy resins such as these alkyl substituents, halides and hydrogenated products, novolak type epoxy resins and the like. Further, other commonly known epoxy resins such as a polyfunctional epoxy resin and a heterocyclic-containing epoxy resin may be used. These may be used alone or in combination of two or more.

The content ratio of the epoxy resin in the die bond film (adhesive layer) 3 is 5% by mass or more and 60 mass from the viewpoint of appropriately exhibiting the function as a thermosetting adhesive in the die bond film (adhesive layer) 3. It is preferably in the range of% or less, and more preferably in the range of 10% by mass or more and 50% by mass or less.

(Curing agent for epoxy resin)
Examples of the curing agent for the epoxy resin include a phenol resin obtained by reacting a phenol compound with a xylylene compound which is a divalent linking group in the presence of a non-catalyst or an acid catalyst. Examples of the phenol resin include novolak type phenol resin, resol type phenol resin, and polyoxystyrene such as polyparaoxystyrene. Examples of the novolak type phenol resin include phenol novolac resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, nonylphenol novolak resin and the like. These phenol resins may be used alone or in combination of two or more. Among these phenol resins, phenol novolac resin and phenol aralkyl resin are preferably used because they tend to improve the connection reliability of the die bond film (adhesive layer) 3.

From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the thermosetting resin composition, the phenol resin preferably has a hydroxyl group in the phenol resin per equivalent amount of epoxy groups in the epoxy resin component. Is preferably blended in an amount in the range of 0.5 equivalents or more and 2.0 equivalents or less, more preferably 0.8 equivalents or more and 1.2 equivalents or less.

(others)
Further, a curing accelerator such as a tertiary amine, an imidazole, or a quaternary ammonium salt may be added to the thermosetting resin composition, if necessary. Specific examples of such a curing accelerator include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimellitate. These may be used alone or in combination of two or more.

Furthermore, an inorganic filler can be added to the thermosetting resin composition, if necessary, from the viewpoint of controlling the fluidity of the die bond film (adhesive layer) 3 and improving the elastic modulus. Specifically, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisk, boron nitride, crystalline silica. , Amorphous silica and the like, and these may be used alone or in combination of two or more. The content ratio of the inorganic filler in the die bond film (adhesive layer) 3 is preferably in the range of 35% by mass or more and 60% by mass or less.

Further, a flame retardant, a silane coupling agent, an ion trapping agent and the like may be added to the thermosetting resin composition, if necessary. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin and the like. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide, antimony hydroxide, zirconium phosphate having a specific structure, magnesium silicate, aluminum silicate, triazole compound, tetrazole compound, bipyridyl compound and the like. Can be mentioned.

<Thickness of die bond film (adhesive layer)>
The thickness of the die bond film (adhesive layer) 3 is not particularly limited, but is preferably in the range of 5 μm or more and 60 μm or less. If the thickness of the die bond film (adhesive layer) 3 is less than 5 μm, the adhesive strength between the semiconductor chip and the lead frame or the wiring board may be insufficient. On the other hand, if the thickness of the die bond film (adhesive layer) 3 exceeds 60 μm, it becomes uneconomical and it tends to be insufficient to cope with the miniaturization and thinning of the semiconductor device.

<Manufacturing method of die bond film>
The die bond film (adhesive layer) 3 is manufactured, for example, as follows. First, prepare a release liner. As the release liner, the same release liner placed on the pressure-sensitive adhesive layer 2 of the dicing tape 10 can be used. Next, a coating solution for the die bond film (adhesive layer) 3, which is a material for forming the die bond film (adhesive layer) 3, is prepared. The coating solution is, for example, a thermosetting resin composition containing a glycidyl group-containing (meth) acrylic acid ester copolymer, an epoxy resin, and a curing agent for the epoxy resin, which are constituents of the die bond film (adhesive layer) 3. It can be produced by uniformly mixing and dispersing with a diluting solvent. As the solvent, for example, a general-purpose organic solvent such as methyl ethyl ketone or cyclohexanone can be used.

Next, the coating solution for the die bond film (adhesive layer) 3 is applied to the peeling-treated surface of the release liner as a temporary support, dried, and the die bond film (adhesive layer) having a predetermined thickness is dried. ) 3 is formed. After that, the peeled surface of another peeling liner is bonded onto the die bond film (adhesive layer) 3. The coating method is not particularly limited, and for example, a die coater, a comma coater (registered trademark), a gravure coater, a roll coater, a reverse coater, or the like can be used for coating. As the drying conditions, for example, the drying temperature is preferably 70 ° C. or higher and 160 ° C. or lower, and the drying time is preferably 1 minute or longer and 5 minutes or lower. In the present invention, a laminate having a release liner on both sides or one side of the die bond film (adhesive layer) 3 may also be referred to as a die bond film (adhesive layer) 3.

<Manufacturing method of dicing die bond film>
The method for producing the dicing die bond film 20 is not particularly limited, but the dicing die bond film 20 can be produced by a conventionally known method. For example, in the dicing die bond film 20, the dicing tape 10 and the die bond film 20 are prepared individually, and then the adhesive layer 2 of the dicing tape 10 and the release liner of the die bond film (adhesive layer) 3 are peeled off. Then, the adhesive layer 2 of the dicing tape 10 and the die bond film (adhesive layer) 3 may be pressure-bonded and bonded with a pressure-bonding roll such as a hot roll laminator. The bonding temperature is preferably in the range of, for example, 10 ° C. or higher and 100 ° C. or lower, and the bonding pressure (linear pressure) is preferably in the range of, for example, 0.1 kgf / cm or more and 100 kgf / cm or less. In the present invention, the dicing die bond film 20 may also be referred to as a dicing die bond film 20 in which a laminate having a release liner on the pressure-sensitive adhesive layer 2 and the die bond film (adhesive layer) 3 is also referred to as the dicing die bond film 20. In the dicing die bond film 20, the release liner provided on the pressure-sensitive adhesive layer 2 and the die bond film (adhesive layer) 3 may be peeled off when the dicing die bond film 20 is applied to the work.

The dicing die bond film 20 may be in the form of being rolled into a roll or in the form of laminating wide sheets. Further, the dicing tape 10 in these forms may be in the form of a sheet or a tape formed by cutting the dicing tape 10 into a predetermined size.

For example, as disclosed in Japanese Patent Application Laid-Open No. 2011-159929, an adhesive layer (die bond film) and an adhesive film (dicing tape) precut into the shape of a wafer constituting a semiconductor element on a release base material (release liner). ) Can also be produced in the form of a film roll in which a large number of) are formed in an island shape. In this case, the dicing tape 10 is formed in a circle having a larger diameter than the die bond film (adhesive layer) 3, and the dicing film (adhesive layer) 3 is formed in a circle having a diameter larger than that of the semiconductor wafer 30. ..

≪Manufacturing method of semiconductor chips≫
FIG. 5 is a flowchart illustrating a method of manufacturing a semiconductor chip using the dicing tape 10 or the dicing die bond film 20 of the present embodiment. Further, FIG. 6 is a schematic view showing a state in which a ring frame (wafer ring) is attached to the outer edge portion of the dicing tape (or dicing die bond film) and a semiconductor wafer is attached to the central portion. Further, FIGS. 7A to 7F are views showing an example of manufacturing a semiconductor chip using a dicing tape in which the pressure-sensitive adhesive layer 2 is laminated on the base film 1 of the present embodiment. .. Further, FIGS. 8 (a) to 8 (f) show a semiconductor using the dicing die bond film 20 in which the dicing film (adhesive layer) 3 is laminated on the adhesive layer 2 of the dicing tape 10 of the present embodiment. It is a figure which showed the manufacturing example of a chip.

<Manufacturing method of semiconductor chip using dicing tape 10>
First, as shown in FIG. 7A, for example, a semiconductor wafer 30 having a plurality of integrated circuits (not shown) mounted on a semiconductor wafer 30 containing silicon as a main component is prepared (step S201: preparation step).

Next, the surface opposite to the surface on which the integrated circuit of the semiconductor wafer 30 is mounted is ground to make the semiconductor wafer 30 a predetermined thickness (step S202: grinding step). At this time, although not shown, a protective tape (backgrinding tape) is attached to the surface on which the integrated circuit of the semiconductor wafer 30 is mounted. The protective tape is peeled off before the cutting (dicing) step of the semiconductor wafer 30.

The thickness of the semiconductor wafer 30 is preferably adjusted to a thickness of 100 μm or less, more preferably 20 μm or more and 50 μm or less. It is desired that the semiconductor chip be made thinner, but if the thickness is made smaller, the semiconductor chip becomes brittle and easily cracked, and the yield deteriorates. The dicing tape of the present invention can practically pick up a small semiconductor chip without damaging it with a push-up speed within an acceptable range and a smaller push-up height.

Next, after peeling the release liner from the adhesive layer 2 of the dicing tape 10 cut into a circular shape, as shown in FIGS. 6 and 7 (a), a ring frame is formed on the outer edge of the adhesive layer 2 of the dicing tape 10. (Wafering) 40 is attached, and the semiconductor wafer 30 is attached to the central portion of the adhesive layer 2 of the dicing tape 10 (step S203: attachment step). When the dicing tape 10 is attached immediately after grinding the semiconductor wafer 30 in step 202, the dicing tape 10 is attached to the semiconductor wafer 30 in a state where active atoms are present on the surface of the semiconductor wafer 30.

Here, in the sticking step, the dicing tape 10 is generally stuck on the semiconductor wafer 30 by using a crimping roll or the like that presses the adhesive tape. The pasting temperature is not particularly limited, but is preferably in the range of, for example, 20 ° C. or higher and 80 ° C. or lower. The pressure at the time of pasting is not particularly limited, but is preferably in the range of, for example, 0.1 MPa or more and 0.3 MPa or less. Further, the dicing tape 10 may be attached to the semiconductor wafer 30 by superimposing the semiconductor wafer 30 and the dicing tape 10 in a container that can be pressurized (for example, an autoclave or the like) and pressurizing the inside of the container. Further, the dicing tape 10 may be attached to the semiconductor wafer 30 in the decompression chamber (vacuum chamber).

Subsequently, as shown in FIG. 7B, the surface on which the semiconductor wafer 30 is mounted with the integrated circuit along the planned cutting (dicing) line X in a state where the dicing tape 10 and the semiconductor wafer 30 are bonded together. From the side, according to a conventional method, a semiconductor chip 30a is formed by cutting into a predetermined size with a dicing blade using a dicing blade or the like to form a semiconductor chip 30a (step S204: cutting (dicing) step). As shown in FIG. 7 (c), in this example, a so-called full cut is performed in which the entire semiconductor wafer 30 is cut. In the cutting step of cutting the semiconductor wafer 30, ideally, only the semiconductor wafer 30 needs to be cut in order to obtain the semiconductor chip 30a, but in reality, the operational accuracy of the device and the dicing tape 10 and the semiconductor wafer 30 used are used. In order to reliably obtain the semiconductor chip 30a in consideration of the thickness accuracy of the above, it is preferable to cut a part of the pressure-sensitive adhesive layer 2 and the base film 1 as shown in FIG. 7 (c).

As described above, in the base film 1 of the present embodiment, even if a part of the base film 1 is cut, lint-like cutting chips are less likely to be generated during dicing. Therefore, it is possible to suppress pickup defects of the semiconductor chip 30a. The depth of cut of the base film 1 by the dicing blade is not particularly limited, but the strength of the base film 1 in which the generation of cutting chips is suppressed and a part of the cut is made (the base film 1 is broken in the expanding step described later). From the viewpoint of the balance of strength), it is preferably up to 1/2 of the thickness of the base film 1, and more preferably up to 1/4.

Here, in the cutting step, for example, a rotating blade is used while supplying cleaning water to the semiconductor wafer 30 to which the dicing tape 10 is attached in order to remove frictional heat and prevent the adhesion of cutting debris. The semiconductor wafer 30 is cut into a predetermined size.

Subsequently, the dicing tape 10 is irradiated with active energy rays from the base film 1 side to cure and shrink the pressure-sensitive adhesive layer 2 and reduce the adhesive strength of the pressure-sensitive adhesive layer 2 (step S205: activity). Energy ray irradiation process). Here, examples of the active energy ray used for the post-irradiation include ultraviolet rays, visible rays, infrared rays, electron beams, β rays, and γ rays. Among these active energy rays, ultraviolet rays (UV) and electron beams (EB) are preferable, and ultraviolet rays (UV) are particularly preferably used. The light source for irradiating the above ultraviolet rays (UV) is not particularly limited, but for example, a black light, an ultraviolet fluorescent lamp, a low pressure mercury lamp, a medium pressure mercury lamp, a high pressure mercury lamp, an ultrahigh pressure mercury lamp, a carbon arc lamp, a metal halide lamp, and a xenon. A lamp or the like can be used. Further, an ArF excimer laser, a KrF excimer laser, an excimer lamp, a synchrotron emission light, or the like can also be used. The amount of ultraviolet light (UV) irradiated is not particularly limited, and ^{is preferably in the range of 100 mJ / cm 2} or more and 2000 J / cm ² or less, and preferably in the range of 300 mJ / cm ² or more and 1000 J / cm ² or less. Is more preferable.

The active energy ray irradiation step may be performed only when the pressure-sensitive adhesive layer 2 of the dicing tape 10 is composed of an active energy ray-curable pressure-sensitive adhesive composition, and the pressure-sensitive adhesive layer 2 of the dicing tape 10 has active energy. When composed of a non-curable pressure-sensitive adhesive composition, it is not necessary to perform an active energy ray irradiation step.

Subsequently, in order to facilitate picking up of the individual semiconductor chips 30a formed by dicing, the dicing tape 10 is stretched (expanded) as shown in FIG. 7 (d) after the cutting step (step S206: Expanding process). Specifically, with respect to the dicing tape 10 holding the plurality of cut semiconductor chips 30a, a hollow cylindrical push-up member is raised from the lower surface side of the dicing tape 10, and the dicing tape 10 is raised from the ring frame ( Wafering) 40 is expanded so as to be radially stretched in a two-dimensional direction including the radial direction and the circumferential direction. The expanding step widens the distance between the semiconductor chips 30a, enhances the recognition of the semiconductor chips 30a by a CCD camera or the like, and reattaches the semiconductor chips 30a caused by the contact between the adjacent semiconductor chips 30a at the time of pickup. Can be prevented. As a result, the pick-up property of the semiconductor chip 30a is improved.

Subsequently, a so-called pickup is performed in which the individual semiconductor chips 30a are peeled off from the dicing tape 10 by cutting the semiconductor wafer 30 (step S207: peeling (pickup) step).

As a pick-up method, for example, as shown in FIG. 7 (e), the semiconductor chip 30a is pushed up by a push-up pin (needle) 60 on the second surface of the base film 1 of the dicing tape 10, and is shown in FIG. 7 (f). ), A method of sucking the pushed-up semiconductor chip 30a with a suction collet 50 of a pickup device (not shown) and peeling it off from the adhesive layer 2 of the dicing tape 10 and the like can be mentioned. As a result, the semiconductor chip 30a is obtained.

The pickup conditions are not particularly limited as long as they are practically acceptable, and the push-up speed of the push-up pin (needle) 60 is usually set within a range of 1 mm / sec or more and 100 mm / sec or less. However, when the thickness of the semiconductor chip 30a (thickness of the semiconductor wafer) is as thin as 100 μm or less, it should be set within the range of 1 mm / sec or more and 20 mm / sec or less from the viewpoint of suppressing damage to the semiconductor thin film chip. Is preferable. From the viewpoint of productivity, it is more preferable that the setting can be made within the range of 5 mm / sec or more and 20 mm / sec or less.

Further, the push-up height of the push-up pin that enables pickup without damaging the semiconductor chip 30a is preferably set within the range of 100 μm or more and 600 μm or less from the same viewpoint as above, and stress on the semiconductor thin film chip. From the viewpoint of mitigation, it is more preferable that the setting can be made within the range of 100 μm or more and 450 μm or less. From the viewpoint of productivity, it is particularly preferable that the setting can be made within the range of 100 μm or more and 350 μm or less. It can be said that the dicing tape that can reduce the push-up height is excellent in pick-up property.

As described above, in the dicing tape 10 of the present embodiment, when the dicing tape 10 is pushed up by the push-up pin in the peeling (pickup) step of the semiconductor chip 30a, the dicing tape 10 is easily curved. Therefore, even if the push-up height of the push-up pin is small, that is, even if the push-up pin is pushed up with a small force, peeling from the adhesive layer 2 at the four end portions of the semiconductor chip 30a is likely to be promoted. As a result, even when an ultrathin semiconductor wafer 30 having a strength of 100 μm or less is used, the ultrathin semiconductor chip 30a is rapidly peeled off from the adhesive layer, and the force is smaller than the conventional force. The ultrathin semiconductor chip 30a can be easily picked up from the adhesive layer 2 of the dicing tape 10 without damaging it. As a result, the pickup success rate of the semiconductor chip 30a can be further improved as compared with the conventional case.

The manufacturing method described in FIGS. 7A to 7F is an example of a manufacturing method of the semiconductor chip 30a using the dicing tape 10, and the method of using the dicing tape 10 is not limited to the above method. That is, the dicing tape 10 of the present embodiment can be used without being limited to the above method as long as it is attached to the semiconductor wafer 30 at the time of dicing.

For example, when the dicing tape 10 of the present embodiment is used, the dicing method of the semiconductor wafer is selective by irradiating the inside of the semiconductor wafer with a laser as a method of not generating cutting chips in addition to the blade dicing method described above. There is also a method of forming a dicing line while forming a modified layer on the surface of the wafer, and using the modified layer as a starting point, for example, a method of vertically growing cracks by an expanding process at a low temperature of -15 ° C to cut the semiconductor wafer. It can be used.

<Manufacturing method of semiconductor chip using dicing die bond film 20>
A method for manufacturing the semiconductor chip 30a when the dicing tape 10 of the present embodiment is used as the shape of the dicing die bond film 20 will also be described. It is basically the same as the method for manufacturing a semiconductor chip using the dicing tape 10 described above, except that the die bond film (adhesive layer) 3 is present between the adhesive layer 2 of the dicing tape 10 and the semiconductor wafer 30. Is. When the dicing die bond film 20 is used, the die bond film (adhesive layer) 3 is attached to the surface opposite to the surface on which the integrated circuit of the semiconductor chip 30a is mounted, that is, the semiconductor chip with the adhesive layer. It is picked up in the form.

First, the semiconductor wafer 30 prepared in the same manner as the method for manufacturing a semiconductor chip using the dicing tape 10 described above is ground to a predetermined thickness (step S201: preparation step, step S202: grinding step). Next, after peeling the release liner from the adhesive layer 2 and the die bond film (adhesive layer) 3 of the dicing die bond film 20 cut into a circle, as shown in FIGS. 6 and 8 (a), the adhesive of the dicing tape 10 is adhered. A ring frame (wafer ring) 40 is attached to the outer edge of the agent layer 2, and a semiconductor wafer 30 is placed on a die bond film (adhesive layer) 3 laminated on the upper center of the adhesive layer 2 of the dicing tape 10. Pasting (step S203: pasting step).

Subsequently, as shown in FIG. 8B, the semiconductor wafer 30 is mounted on the integrated circuit along the planned cutting (dicing) line X in a state where the dicing die bond film 20 and the semiconductor wafer 30 are bonded together. From the surface side, according to a conventional method, it is cut into a predetermined size by a dicer or the like and separated into pieces to form a semiconductor chip 30a (step S204: cutting (dicing) step). As shown in FIG. 8C, in this example, a so-called full cut is performed in which the entire semiconductor wafer 30 is cut. In the cutting step of cutting the semiconductor wafer 30, ideally, only the semiconductor wafer 30 needs to be cut in order to obtain the semiconductor chip 30a, but in reality, the operational accuracy of the device and the dicing tape 10 and the semiconductor wafer 30 used are used. In order to reliably obtain the semiconductor chip 30a in consideration of the thickness accuracy of the above, a part of the die bond film (adhesive layer) 3, the adhesive layer 2 and the base film 1 is cut as shown in FIG. 8 (c). Is preferable.

The depth of cut by the blade with respect to the base film 1 is not particularly limited, but the strength of the base film 1 having a partial cut and suppressing the generation of cutting chips (the base film 1 does not break in the expand step described later). From the viewpoint of the balance of strength), it is preferably up to 1/2 of the thickness of the base film 1, and more preferably up to 1/4.

Subsequently, in the same manner as in the method for manufacturing a semiconductor chip using the dicing tape 10 described above, step S205: active energy ray irradiation step is performed as necessary, and then step S206: expanding step (see FIG. 8D). Then, by going through the step S207: peeling (pickup) step (see FIGS. 8 (e) and 8 (f)), even when an ultrathin semiconductor wafer 30 having a low strength of 100 μm or less is used. The ultra-thin semiconductor chip 30a with the dicing film (adhesive layer) 3 can be easily picked up from the adhesive layer 2 of the dicing die bond film 20.

The manufacturing method described in FIGS. 8A to 8F is an example of a manufacturing method of the semiconductor chip 30a using the dicing die bond film 20, and the method of using the dicing tape 10 as a form of the dicing die bond film 20. Is not limited to the above method. That is, the dicing die bond film 20 of the present embodiment can be used without being limited to the above method as long as it is attached to the semiconductor wafer 30 at the time of dicing.

For example, when the dicing tape 10 of the present embodiment is used in the form of the dicing die bond film 20, the dicing method of the semiconductor wafer is, in addition to the blade dicing method described above, as a method of not generating cutting chips inside the semiconductor wafer. A dicing line is formed by irradiating a laser to selectively form a modified layer, and cracks are grown vertically from the modified layer by an expanding process at a low temperature of, for example, -15 ° C, to form a semiconductor. A method of cutting the wafer together with the dicing film can also be used.

Subsequently, the present invention will be described in more detail with reference to Examples and Comparative Examples. The present invention is not limited to the following examples.

1. 1. Preparation of Base Film 1 The following resins A to I were prepared as materials for preparing the base film 1. The resins A to G contain dimethyl terephthalate and 1,4-butanediol as hard segment (PBT) components, and poly (tetramethylene oxide) glycol (PTMG1000) having a number average molecular weight of 1,000 as soft segment components, or It is a thermoplastic polyester elastomer produced from poly (tetramethylene oxide) glycol (PTMG1500) having a number average molecular weight of 1,500 or poly (tetramethylene oxide) glycol (PTMG2000) having a number average molecular weight of 2,000.

(resin)
Resin A: Thermoplastic polyester elastomer having a segment ratio of polybutylene terephthalate (PBT) / poly (tetramethylene oxide) glycol (PTMG2000) = 27% by mass / 73% by mass, crystal melting point 160 ° C.
Resin B: Thermoplastic polyester elastomer having a segment ratio of polybutylene terephthalate (PBT) / poly (tetramethylene oxide) glycol (PTMG2000) = 33% by mass / 67% by mass, crystal melting point 180 ° C.
Resin C: Thermoplastic polyester elastomer having a segment ratio of polybutylene terephthalate (PBT) / poly (tetramethylene oxide) glycol (PTMG1000) = 39% by mass / 61% by mass, crystal melting point 172 ° C.
Resin D: Polybutylene terephthalate (PBT) / poly (tetramethylene oxide) glycol (PTMG1500) = thermoplastic polyester elastomer having a segment ratio of 45% by mass / 55% by mass, crystal melting point 186 ° C.
Resin E: Polybutylene terephthalate (PBT) / poly (tetramethylene oxide) glycol (PTMG1500) = thermoplastic polyester elastomer having a segment ratio of 51% by mass / 49% by mass, crystal melting point 192 ° C.
Resin F: Polybutylene terephthalate (PBT) / poly (tetramethylene oxide) glycol (PTMG1500) = thermoplastic polyester elastomer having a segment ratio of 54% by mass / 46% by mass, crystal melting point 198 ° C.
Resin G: Thermoplastic polyester elastomer having a segment ratio of polybutylene terephthalate (PBT) / poly (tetramethylene oxide) glycol (PTMG1000) = 64% by mass / 36% by mass, crystal melting point 203 ° C.
-Resin H: Random copolymerized polypropylene (PP), crystal melting point 138 ° C.
-Resin I: Ethylene-vinyl acetate copolymer (EVA), vinyl acetate content 20% by mass, crystal melting point 82 ° C.
-Resin J: Low density polyethylene (LDPE), crystal melting point 116 ° C

[Crystal melting point of resin]
The crystal melting point of the resin was measured as follows using a differential thermal scanning calorimeter "DSC-8321" (product name) manufactured by Rigaku Co., Ltd. First, 10 mg of each resin sample is filled in an aluminum pan, the temperature is raised to 290 ° C. at a heating rate of 10 ° C./min under a nitrogen atmosphere, the temperature is maintained at the same temperature for 3 minutes, and then the aluminum pan is placed in liquid nitrogen. Throw it in and quench it. Next, the rapidly cooled aluminum pan is set again in the differential thermal scanning calorimeter "DSC-8321", and the peak temperature of the endothermic peak that appears when the temperature is raised at a heating rate of 10 ° C./min is set to the crystal melting point of the resin. And said.

(Base film 1 (a))
Using the above resin B (PBT / PTMG2000 = 33% by mass / 67% by mass), a single-layer 100 μm-thick base film 1 (a) was formed by a T-die extruder.

(Base film 1 (b))
Using the above resin C (PBT / PTMG1000 = 39% by mass / 61% by mass), a single-layer 100 μm-thick base film 1 (b) was formed by a T-die extruder.

(Base film 1 (c))
Using the above resin D (PBT / PTMG1500 = 45% by mass / 55% by mass), a single-layer 100 μm-thick base film 1 (c) was formed by a T-die extruder.

(Base film 1 (d))
Using the above resin A (PBT / PTMG2000 = 27% by mass / 73% by mass), a 100 μm-thick base film 1 (d) having a three-layer structure of the same resin was formed by a type 1 three-layer T-die coextrusion molding machine. A film was formed. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer) / 2nd layer / 3rd layer = 20 μm / 60 μm / 20 μm.

(Base film 1 (e))
The resin A (PBT / PTMG2000 = 27% by mass / 73% by mass) is used as the resin for the second layer, and the resin B (PBT / PTMG2000 = 33% by mass / 67% by mass) is used as the resin for the first and third layers. A 100 μm-thick base film 1 (e) having a two-kind resin three-layer structure was formed by a two-kind three-layer T-die coextrusion molding machine. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer) / 2nd layer / 3rd layer = 25 μm / 50 μm / 25 μm. The mass ratio of the PBT and PTMG segments as a whole layer is PBT / PTMG = 30% by mass / 70% by mass.

(Base film 1 (f))
The resin C (PBT / PTMG1000 = 39% by mass / 61% by mass) is used as the resin for the second layer, and the resin D (PBT / PTMG1500 = 45% by mass / 55% by mass) is used as the resin for the first and third layers. A 100 μm-thick base film 1 (f) having a two-kind resin three-layer structure was formed by a two-kind three-layer T-die coextrusion molding machine. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer) / 2nd layer / 3rd layer = 30 μm / 40 μm / 30 μm. The mass ratio of the PBT and PTMG segments as a whole layer is PBT / PTMG = 43% by mass / 57% by mass.

(Base film 1 (g))
Using the above resin E (PBT / PTMG1500 = 51% by mass / 49% by mass) as the first layer resin and the above resin D (PBT / PTMG1500 = 45% by mass / 55% by mass) as the second layer resin, A 100 μm-thick base film 1 (g) having a two-layer structure of two-kind resin was formed by a two-kind two-layer T-die coextrusion molding machine. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer) / 2nd layer = 30 μm / 70 μm. The mass ratio of the PBT and PTMG segments as a whole layer is PBT / PTMG = 47% by mass / 53% by mass.

(Base film 1 (h))
Using the above resin E (PBT / PTMG1500 = 51% by mass / 49% by mass) as the first layer resin and the above resin D (PBT / PTMG1500 = 45% by mass / 55% by mass) as the second layer resin, A 100 μm-thick base film 1 (h) having a two-layer structure of two-type resin was formed by a two-type two-layer T-die coextrusion molding machine. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer) / 2nd layer = 60 μm / 40 μm. The mass ratio of the PBT and PTMG segments as a whole layer is PBT / PTMG = 49% by mass / 51% by mass.

(Base film 1 (i))
Using the above resin A (PBT / PTMG2000 = 27% by mass / 73% by mass), a base film 1 (i) having a three-layer structure of the same resin and having a thickness of 155 μm was obtained by a one-type three-layer T-die coextrusion molding machine. A film was formed. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer) / 2nd layer / 3rd layer = 20 μm / 115 μm / 20 μm.

(Base film 1 (j))
The resin C (PBT / PTMG1000 = 39% by mass / 61% by mass) is used as the resin for the second layer, and the resin D (PBT / PTMG1500 = 45% by mass / 55% by mass) is used as the resin for the first and third layers. A 70 μm-thick base film 1 (j) having a two-kind resin three-layer structure was formed by a two-kind three-layer T-die coextrusion molding machine. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer) / 2nd layer / 3rd layer = 20 μm / 30 μm / 20 μm. The mass ratio of the PBT and PTMG segments as a whole layer is PBT / PTMG = 42% by mass / 58% by mass.

(Base film 1 (k))
Using the above-mentioned resin I (EVA) as the second-layer resin and the above-mentioned resin H (PP) as the first-layer and third-layer resins, the second-class resin 3 by a two-kind three-layer T-die coextrusion molding machine. A base film 1 (k) having a layer structure and a thickness of 80 μm was formed. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer) / 2nd layer / 3rd layer = 8 μm / 64 μm / 8 μm. The mass ratio of PP / EVA as a whole layer is PP / EVA = 20% by mass / 80% by mass.

(Base film 1 (l))
Using the above-mentioned resin H (PP) as the second-layer resin and the above-mentioned resin J (PE) as the first-layer and third-layer resins, the second-class resin 3 by a two-kind three-layer T-die coextrusion molding machine. A 90 μm-thick base film 1 (l) having a layer structure was formed. The thickness of each layer was set to 1st layer (surface side in contact with the adhesive layer) / 2nd layer / 3rd layer = 10 μm / 70 μm / 10 μm. The mass ratio of PE / PP as a whole layer is PE / PP = 22% by mass / 78% by mass.

(Base film 1 (m))
Using the above resin F (PBT / PTMG1500 = 54% by mass / 46% by mass), a single-layer 100 μm-thick base film 1 (m) was formed by a T-die extruder.

(Base film 1 (n))
Using the above resin G (PBT / PTMG1000 = 64% by mass / 36% by mass), a single-layer 100 μm-thick base film 1 (n) was formed by a T-die extruder.

[Bending modulus of substrate film (G')]
For the above base films 1 (a) to (n), the flexural modulus (G') at 23 ° C. was measured using a dynamic viscoelasticity measuring device "DMA6100" (product name) manufactured by Hitachi High-Tech Science Co., Ltd. , Measured as follows. First, as a sample for measurement, a plurality of samples having the following sample sizes are cut out from the raw fabric of the base film 1, stacked, and consolidated using a heat press machine so that the total thickness is 1.5 mm. A laminated body was prepared. The sample size was 10 mm (width) x 50 mm (length) x 1.5 mm (thickness). Here, in the samples of the plurality of base film 1 prepared in advance, the width direction of 10 mm in the sample size is the MD direction (flow direction) at the time of film formation of the base film 1, and the sample size is 50 mm. Center in the width direction when the base film 1 is processed into the original fabric of the dicing tape 10 so that the length direction matches the TD direction (direction perpendicular to the MD direction) at the time of film formation of the base film 1. The one cut out from the position corresponding to the part was used. These measurement samples were set in a dynamic viscoelasticity measuring device, and in the double-sided beam bending mode, the frequency was 1 Hz, the heating rate was 0.5 ° C / min, the measurement temperature range was -40 ° C to 40 ° C, and the nitrogen atmosphere. Dynamic viscoelasticity was measured under the following conditions. The value of the storage elastic modulus at 23 ° C. in the obtained dynamic viscoelasticity spectrum was taken as the bending elastic modulus (G') of the base film 1.

[Ultraviolet transmittance of base film]
The ultraviolet (UV) transmittance of the above-mentioned substrate films 1 (a) to (n) was measured using a spectrophotometer "V-670DS" (product name) manufactured by JASCO Corporation. Specifically, the parallel light transmittance at a wavelength of 365 nm was measured.

[Elongation rate of base film]
Tensile tester "MinebeaTechnoGraph TG-5kN" (product name) manufactured by MinebeaMitsumi Co., Ltd. for the above base film 1 (a) to (n) based on the method specified in JIS Z 0237 (2009). Was used to measure the elongation rate in the MD direction and the TD direction.

2. 2. Preparation of Adhesive Composition Solution As the adhesive composition for the adhesive layer 2 of the dicing tape 10, the following active energy ray non-curable acrylic pressure-sensitive adhesive compositions (a) and (b) and active energy ray curable Solutions of acrylic pressure-sensitive adhesive compositions (c) and (d) were prepared.

(Solution of Adhesive Composition 2 (a))
Methyl methacrylate (MMA), 2-ethylhexyl acrylate (2-EHA), -2-hydroxyethyl acrylate (2-HEA), and acrylic acid (AA) were prepared as copolymerization monomer components. These copolymerization monomer components are mixed so as to have a copolymerization ratio of MMA / 2-EHA / 2-HEA / AA = 56% by mass / 39% by mass / 3% by mass / 2% by mass, and ethyl acetate is used as a solvent. A base polymer solution (A) having a hydroxyl group and an acid group by solution radical polymerization using azobisisobutyronitrile (AIBN) as an initiator (solid content concentration: 35% by mass, weight average molecular weight Mw: 410,000). Was synthesized.

Subsequently, an epoxy-based cross-linking agent manufactured by Mitsubishi Gas Chemicals Co., Ltd. (trade name: TETRAD-X) was used as a cross-linking agent for 286 parts by mass (100 parts by mass in terms of solid content) of the base polymer solution (A) synthesized above. (Solid content concentration: 100% by mass) was blended at a ratio of 0.3 parts by mass (0.3% by mass in terms of solid content), diluted with ethyl acetate, stirred, and the activity had a solid content concentration of 22.6% by mass. A solution of the energy ray non-curable acrylic pressure-sensitive adhesive composition 2 (a) was prepared.

(Solution of Adhesive Composition 2 (b))
Using the base polymer solution (A) used in the solution of the pressure-sensitive adhesive composition 2 (a), Tosoh shares were used as a cross-linking agent for 286 parts by mass (100 parts by mass in terms of solid content) of the base polymer solution (A). A company-made isocyanate-based cross-linking agent (trade name: Coronate L, solid content concentration: 75% by mass) was blended at a ratio of 2.7 parts by mass (2.0 parts by mass in terms of solid content), diluted with ethyl acetate, and diluted. With stirring, a solution of the active energy ray non-curable acrylic pressure-sensitive adhesive composition 2 (b) having a solid content concentration of 22.6% by mass was prepared.

(Adhesive Composition 2 (c))
2-Ethylhexyl acrylate (2-EHA), -2hydroxyethyl acrylate (2-HEA), and methyl methacrylate (MMA) were prepared as copolymerization monomer components. These copolymerization monomer components are mixed so as to have a copolymerization ratio of 2-EHA / 2-HEA / MMA = 75% by mass / 20% by mass / 5% by mass, and ethyl acetate is used as a solvent and azobis is used as an initiator. A base polymer solution having a hydroxyl group was synthesized by solution radical polymerization using isobutyronitrile (AIBN).

Next, 16 parts by mass of 2-isocyanate ethyl methacrylate (MOI) having an isocyanate group and an active energy ray-reactive carbon-carbon double bond as an active energy ray-reactive compound with respect to 100 parts by mass of the solid content of this base polymer. (C) (solid content concentration: 35% by mass, weight average molecular weight Mw) having a carbon-carbon double bond in the side chain by reacting with a part of the hydroxyl group of 2-HEA. : 550,000, carbon-carbon double bond content: 0.89 meq / g) was synthesized. In the above reaction, 0.05 parts by mass of hydroquinone / monomethyl ether was used as a polymerization inhibitor.

Subsequently, with respect to 286 parts by mass (100 parts by mass in terms of solid content) of the acrylic adhesive polymer solution (C) synthesized above, IGM Resins B. V. 0.7 parts by mass of acylphosphine oxide-based photopolymerization initiator (trade name: Omnirad819) manufactured by Toso Co., Ltd., and isocyanate-based cross-linking agent (trade name: Coronate L, solid content concentration: 75% by mass) manufactured by Toso Co., Ltd. as a cross-linking agent. ) Was compounded at a ratio of 5.3 parts by mass (4.0 parts by mass in terms of solid content), diluted with ethyl acetate, and stirred to obtain an active energy ray-curable acrylic adhesive having a solid content concentration of 22.6% by mass. A solution of the agent composition 2 (c) was prepared.

(Adhesive Composition 2 (d))
2-Ethylhexyl acrylate (2-EHA), -2hydroxyethyl acrylate (2-HEA), methyl methacrylate (MMA), and N-vinyl-2-pyrrolidone (NVP) were prepared as copolymerization monomer components. These copolymerization monomer components are mixed so as to have a copolymerization ratio of 2-EHA / 2-HEA / MMA / NVP = 50% by mass / 3% by mass / 37% by mass / 10% by mass, and ethyl acetate is used as a solvent. A base polymer solution (D) having a hydroxyl group (solid content concentration: 35% by mass, weight average molecular weight Mw: 500,000) was synthesized by solution radical polymerization using azobisisobutyronitrile (AIBN) as an initiator.

Subsequently, 120 parts by mass of the ultraviolet curable urethane acrylate-based oligomer (weight average molecular weight Mw: 1,000, hydroxyl value) with respect to 286 parts by mass (100 parts by mass in terms of solid content) of the base polymer solution (D) synthesized above. 1 mgKOH / g, double bond equivalent: 167), IGM Resins B. as a photopolymerization initiator. V. 1.0 part by mass of α-aminoalkylphenone-based photopolymerization initiator (trade name: Omnirad369) manufactured by Toso Co., Ltd., and isocyanate-based cross-linking agent (trade name: Coronate L, solid content concentration: 75 mass) manufactured by Toso Co., Ltd. as a cross-linking agent. %) To 10 parts by mass (7.5 parts by mass in terms of solid content), diluted with ethyl acetate, stirred, and an active energy ray-curable acrylic pressure-sensitive adhesive having a solid content concentration of 22.6% by mass. A solution of composition 2 (d) was prepared.

3. 3. Preparation of Adhesive Composition Solution The following solution of the adhesive composition 3 (a) was prepared as the adhesive composition for the die bond film (adhesive layer) 3 of the dicing die bond film 20.

(Solution of Adhesive Composition 3 (a))
First, as a thermosetting resin, cresol novolak type epoxy resin manufactured by Toto Kasei Co., Ltd. (trade name: YDCN-703, epoxy equivalent: 210, molecular weight: 1,200, softening point: 80 ° C.) 55 parts by mass, as a cross-linking agent Phenol resin manufactured by Mitsui Chemicals Co., Ltd. (trade name: Millex XLC-LL, hydroxyl group equivalent: 175, water absorption rate: 1.8%) 45 parts by mass, γ-mercaptopropyltri manufactured by Nippon Unicar Co., Ltd. as a silane coupling agent 1.7 parts by mass of methoxysilane (trade name: NUC A-189) and 3.2 parts by mass of γ-ureidopropyltriethoxysilane (trade name: NUCA-1160) manufactured by Nippon Unicar Co., Ltd., as a filler, Nippon Aerosil Co., Ltd. Cyclohexanone was added as a solvent to a resin composition consisting of 32 parts by mass of silica (trade name: Aerosil R972, average particle size 0.016 μm), mixed with stirring, and further dispersed for 90 minutes using a bead mill.

Next, the glycidyl group-containing (meth) acrylic acid ester copolymer (trade name: HTR-860P-3, glycidyl (meth) acrylate content: 3 manufactured by Nagase ChemteX Corporation as a thermoplastic resin is added to the resin composition. 280 parts by mass, weight average molecular weight Mw: 800,000), and 0.5 parts by mass of 1-cyanoethyl-2-phenylimidazole (trade name: Curesol 2PZ-CN) manufactured by Shikoku Kasei Co., Ltd. as a curing accelerator. The mixture was stirred and mixed, vacuum degassed, and a solution of the adhesive resin composition 3 (a) having a solid content concentration of 20% by mass was prepared.

<Dicing tape 10>
(Example 1)
Using the base film 1 (a) as the base film 1 and the solution of the pressure-sensitive adhesive composition 2 (a) as the solution of the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer 2, the dicing tape 10 is carried out by the following steps. The original fabric (300 mm width) of (a) was prepared.

The solution of the pressure-sensitive adhesive composition 2 (a) is applied to the peel-off liner (thickness 38 μm, polyethylene terephthalate film) so that the thickness of the pressure-sensitive adhesive layer 2 after drying is 30 μm. After the solvent was dried by heating at a temperature of ° C. for 3 minutes, the base film 1 (a) was bonded onto the pressure-sensitive adhesive layer 2 to prepare a raw fabric of the dicing tape 10 (a). Then, the raw fabric of the dicing tape 10 (a) was stored at a temperature of 40 ° C. for 72 hours to crosslink and cure the pressure-sensitive adhesive layer 2. Through the above steps, the original fabric of the dicing tape 10 (a) of this example was prepared. When preparing a dicing sample for a semiconductor wafer 30 having a diameter of 8 inches, which will be described later, the dicing tape 10 (a) provided with the release liner produced above was cut into a circle having a diameter of 290 mm together with the release liner.

(Examples 2 to 13)
As shown in Table 1, the implementation was carried out with respect to Example 1, except that the type of the base film 1, the type of the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer 2, and the thickness of the pressure-sensitive adhesive layer 2 were appropriately changed. The original fabrics of the dicing tapes 10 (b) to (m) were prepared in the same manner as in Example 1. When the base film 1 had a laminated structure, the surface of the base film 1 on the first layer side was bonded onto the pressure-sensitive adhesive layer 2.

(Comparative Examples 1 to 4)
As shown in Table 1, the implementation was carried out with respect to Example 12, except that the type of the base film 1, the type of the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer 2, and the thickness of the pressure-sensitive adhesive layer 2 were appropriately changed. The original fabrics of the dicing tapes 10 (n) to (q) were prepared in the same manner as in Example 12. When the base film 1 had a laminated structure, the surface of the base film 1 on the first layer side was bonded onto the pressure-sensitive adhesive layer 2.

<Dicing die bond film 20>
(Example 14)
First, the same as in Example 1 using the base film 1 (d) as the base film 1 and the solution of the pressure-sensitive adhesive composition 2 (c) as the solution of the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer 2. The original fabric of the dicing tape 10 was prepared.

Next, a solution of the adhesive resin composition 3 (a) for forming the die bond film (adhesive layer) 3 is prepared, and the die bond film after drying is placed on the peeling surface side of the release liner (thickness 38 μm, polyethylene terephthalate film). The solution of the adhesive resin composition 3 (a) is applied and heated at a temperature of 140 ° C. for 5 minutes so that the thickness of the (adhesive layer) 3 is 25 μm to dry the solvent and release the liner. A die bond film (adhesive layer) 3 provided with the above was prepared.

Subsequently, the dibond film (adhesive layer) 3 provided with the release liner produced above is cut into a circle having a diameter of 220 mm together with the release liner, and the adhesive layer surface of the die bond film (adhesive layer) 3 is formed on the release liner. Was attached to the two adhesive layers of the dicing tape 10 that had been peeled off. The bonding conditions were 40 ° C., 10 mm / sec, and a linear pressure of 30 kgf / cm.

Finally, by cutting the dicing tape 10 into a circle having a diameter of 290 mm, a circular die bond film (adhesive layer) 3 having a diameter of 220 mm is laminated on the upper center of the adhesive layer 2 of the circular dicing sheet 10 having a diameter of 290 mm. The dicing die bond film 20 (a) was prepared.

(Examples 15 to 19)
As shown in Table 1, the implementation was carried out with respect to Example 14, except that the type of the base film 1, the type of the pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer 2, and the thickness of the pressure-sensitive adhesive layer 2 were appropriately changed. The dicing die bond films 20 (b) to (f) were produced in the same manner as in Example 14. When the base film 1 had a laminated structure, the surface of the base film 1 on the first layer side was bonded onto the pressure-sensitive adhesive layer 2.

(Comparative Examples 5 to 8)
As shown in Table 1, dicing die bond films 20 (g) to (j) were produced in the same manner as in Example 14 except that the type of the base film 1 was changed with respect to Example 14. When the base film 1 had a laminated structure, the surface of the base film 1 on the first layer side was bonded onto the pressure-sensitive adhesive layer 2.

4. Evaluation Method of Dicing Tape and Dicing Die Bond Film The semiconductors of the dicing tape 10 produced in Examples 1 to 13 and Comparative Examples 1 to 4 and the dicing die bond film 20 produced in Examples 14 to 19 and Comparative Examples 5 to 9 are used. The dicing property of the wafer 30 after dicing, the dicing property of the base film, that is, the dicing property, and the pick-up property of the semiconductor chip 30a were measured and evaluated as follows.

4.1 Fragmentability after dicing of semiconductor wafer First, a semiconductor wafer with a diameter of 8 inches is attached to the surface of a semiconductor wafer with a diameter of 8 inches using a backgrinding device "DAG-810" (product name) manufactured by DISCO Co., Ltd. After combining them, they were ground to obtain a semiconductor wafer (mirror wafer) 30 having a thickness of 50 μm.
For the dicing tapes 10 (a) to (q) of Examples 1 to 13 and Comparative Examples 1 to 4 cut into a circle having a diameter of 290 mm, a release liner was formed on the surface (grinding surface side) of the semiconductor wafer 30 having a thickness of 50 μm. The two surfaces of the adhesive layer of the dicing tape 10 from which the dicing tape was peeled off were attached, and the ring frame 40 was attached to the outer peripheral portion of the two adhesive layers of the dicing tape 10 for each dicing as shown in FIG. 7 (a). A sample was prepared. At this point, the protective tape for back grind of the semiconductor wafer 30 has been peeled off.
Further, regarding the dicing die bond films 20 (a) to (j) in which the circular dicing film (adhesive layer) 3 having a diameter of 220 mm is laminated on the upper center of the adhesive layer 2 of the circular dicing sheet 10 having a diameter of 290 mm. Three dicing film (adhesive layer) of the dicing die bond film 20 from which the release liner has been peeled off are bonded to the surface of the semiconductor wafer 30 having a thickness of 50 μm at a hot plate temperature of 70 ° C., and the dicing tape 10 portion of the dicing die bond film 20. The ring frame 40 was attached to the outer peripheral portion of the two surfaces of the pressure-sensitive adhesive layer to prepare samples for each dicing as shown in FIG. 8 (a). At this point, the protective tape for back grind of the semiconductor wafer 30 has been peeled off.
Subsequently, the above dicing sample was cut by a full-cut dicing method using a fully automatic dicing "DFD-6361" (product name) manufactured by Disco Corporation. The cutting conditions are a blade rotation speed of 40,000 rpm, a cutting speed of 50 mm / sec, and a chip size of 5 mm × 5 mm, and as shown in FIG. 7 (c) or FIG. I cut it so that it would fit in. During the dicing step, running water was continuously supplied toward the rotating blade and the semiconductor wafer and cooled (water supply amount: 1 liter / min, water temperature: 25 ° C.).

After dicing the semiconductor wafer 30 using the dicing tape 10 produced in Examples 1 to 13 and Comparative Examples 1 to 4 described above, and the dicing die bond film 20 produced in Examples 14 to 19 and Comparative Examples 5 to 9, the semiconductor wafer 30 is died. The four sides of the cut semiconductor chip 30a are observed from the surface of the semiconductor wafer 30 using an optical microscope "VHX-1000" (product name) manufactured by Keyence Co., Ltd., and the semiconductor is based on a photograph magnified at a magnification of 150 times. The divided state of the wafer 30 was evaluated. Specifically, it was evaluated whether all the semiconductor chips 30a having a size of 5 mm × 5 mm could be divided in an orderly and independent manner without cracking.

The splittability of the semiconductor wafer after dicing was evaluated according to the following criteria. The evaluation of A was accepted.
A: All chips are independent without breaking (calf is formed)
C: Some chips are cracked, or some chips are not sufficiently formed and adjacent chips are in contact with each other.

4.2 State of cutting chips generated from the base film after dicing the semiconductor wafer In the dicing tapes 10 produced in Examples 1 to 13 and Comparative Examples 1 to 4 described above, and in Examples 14 to 19 and Comparative Examples 5 to 9. After dicing the semiconductor wafer 30 using the produced dicing die bond film 20, the degree of adhesion of cutting chips at predetermined five points on the surface of the semiconductor wafer 30 is determined by the optical microscope "VHX-1000" manufactured by Keyence Co., Ltd. Using (product name), observation was made based on a photograph magnified at a magnification of 150 times. Specifically, the number of lint-like cutting chips having a length of 50 μm or more is counted at each of the predetermined five locations on the semiconductor wafer that has undergone the dicing step, and the lint-like cutting chips at the five locations are counted. The value (average number) obtained by dividing the total number by 5 was calculated. The above-mentioned five predetermined points are one cross line portion (central portion) including the intersection closest to the center of the semiconductor wafer among the intersections of the dividing grooves (dicing lines) formed by dicing, and the pressure-sensitive adhesive layer. It is a cross line portion relating to four intersections (upper, lower, left and right portions) located in a layer in contact with the semiconductor wafer and separated from each other in the circumferential direction of the semiconductor wafer at intervals of 90 degrees.

The state of cutting chips generated from the base film after dicing the semiconductor wafer was evaluated according to the following criteria. The evaluation of A or B was accepted.
A: The average number of thread-like cutting chips is 0 or more and less than 1. B: The average number of thread-like cutting chips is 1 or more and less than 10. C: The average number of thread-like cutting chips is 10 or more.

4.3 Evaluation of pick-up property of semiconductor chip The dicing tape 10 produced in Examples 1 to 13 and Comparative Examples 1 to 4 described above, and the dicing die bond film 20 produced in Examples 14 to 19 and Comparative Examples 5 to 9 are used. After dicing the semiconductor wafer 30 using the dicing tape 30, each dicing tape 10 and each dicing die bond film 20 were expanded in order to extend the distance between the semiconductor chips 30a. When an active energy ray-curable acrylic pressure-sensitive adhesive composition is used as the pressure-sensitive adhesive composition of the pressure-sensitive adhesive layer 2, the base film 1 side is applied to the pressure-sensitive adhesive layer 2 before expanding. The pressure-sensitive adhesive layer 2 was crosslinked and cured by irradiating with ultraviolet rays (UV) having an integrated irradiation light amount of 300 mJ / cm ^2. When the active energy ray non-curable acrylic pressure-sensitive adhesive composition was used as the pressure-sensitive adhesive composition of the pressure-sensitive adhesive layer 2, it was expanded without irradiation with ultraviolet rays (UV). In the expanding step, the expanding speed (the speed at which the hollow cylindrical push-up member rises) was 30 mm / sec, and the expanding amount (the distance at which the hollow cylindrical push-up member rises) was 9 mm.

The pickup device "WCS-700" manufactured by Dite Electron Limited is used for the semiconductor chip 30a in a state where the distance between the semiconductor chips 30a separated on the dicing tape 10 and the dicing die bond film 20 is expanded by the above expanding step. A pickup test was conducted using the product name), and the pickability was evaluated. The collet of the pickup portion used has, for example, a 4.5 mm × 4.5 mm push-up surface, and five push-up pins 60 are arranged at predetermined intervals along the diagonal line of the push-up surface. The pick-up condition was that the push-up speed was 5 mm / sec and the push-up height was changed by 50 μm in the range of 350 to 500 μm. It should be noted that this pickup condition is within a range that does not pose a problem in practice.
Then, at each push-up height, the number of samples of the semiconductor chips 30a was set to 20 at predetermined positions, and the number of semiconductor chips 30a that could be picked up by the adsorption collet 50 without damage was counted.

The pick-up property of the semiconductor chip 30a was evaluated at each push-up height according to the following criteria.
A: The number of successful semiconductor chip pickups is 20 (success rate 100%).
B: The number of successful semiconductor chip pickups is 18 or more and less than 20 (success rate 90% or more and less than 100%).
C: The number of successful semiconductor chip pickups is 16 or more and less than 18 (success rate 80% or more and less than 90%).
D: The number of successful semiconductor chip pickups is less than 16 (success rate less than 80%)

As a comprehensive evaluation of the above pickup test, the smaller the amount of the push-up height of the push-up pin for which the evaluation of the number of successful pick-ups of the semiconductor chip is A or B, the better the pick-up property of the dicing tape 10 or the dicing die bond film 20. Judged to be excellent.

5. Evaluation Results Regarding the evaluation results for the dicing tape 10 produced in Examples 1 to 13 and Comparative Examples 1 to 4, and the dicing die bond film 20 produced in Examples 14 to 19 and Comparative Examples 5 to 9, the dicing tape 10 and dicing were obtained. Tables 1 to 7 show the structure of the dicing film 20 and the structure of the base film 1 used.

First, as shown in Tables 1 to 4, the dicing tapes 10 (a) to (m) of Examples 1 to 13 using the base films 1 (a) to (j) satisfying the requirements of the present invention are diced. It was confirmed that favorable results were obtained in both the evaluation of the characteristics and the pick-up property.

When the examples are compared in detail, Examples 1 to 3, Examples 5 and 6, and Examples 10 to 13 using the base film 1 having a flexural modulus (G') in the range of 17 MPa or more and 115 MPa or less. The dicing tape 10 includes the dicing tapes 10 of Examples 4 and 9 and Examples 7 and 8 using the base film 1 having a flexural modulus (G') of 10.4 MPa, 118.5 MPa and 133.9 MPa, respectively. In comparison, it was found that the dicing characteristics (suppression of cutting chips) and the pick-up property (minimum push-up height at which the pick-up success rate is 100%) are compatible and excellent at a high level. That is, the dicing tapes 10 of Examples 4 and 9 using the base film 1 having a bending elastic modulus (G') of 10.4 MPa are cut during dicing as compared with the dicing tapes 10 of other examples. The effect of suppressing waste was slightly inferior. The dicing tapes 10 of Examples 7 and 8 using the base film 1 having a flexural modulus (G') of 118.5 MPa and 133.9 MPa, respectively, are picked up as compared with the dicing tapes 10 of other examples. In the test, the minimum push-up height at which the pickup success rate was 100% was 400 μm, which was 50 μm larger than the 350 μm of the dicing tape 10 of the other examples, and the pick-up property was slightly inferior.

On the other hand, as shown in Table 4, the dicing tapes 10 (n) to (q) of Comparative Examples 1 to 4 using the base films 1 (k) to (n) that do not satisfy the requirements of the present invention are It was confirmed that the results were inferior to those of the dicing tapes 10 (a) to (m) of Examples 1 to 13 in at least one of the evaluations of the dicing characteristics and the pick-up property.

Specifically, the PP / EVA / PP (two-kind resin, three-layer structure) having a flexural modulus (G') of 146.5 MPa, which exceeds the upper limit of the flexural modulus (G') range of the present invention. The dicing tape 10 (n) of Comparative Example 1 using the base film 1 (k) made of a polyolefin resin had good breakability at the time of dicing and an effect of suppressing cutting chips, but was predetermined in the pick-up test. The pick-up success rate does not reach 100% at any of the push-up heights in the range, and especially when the push-up height is 450 μm or more, many pick-up mistakes due to chip cracking are found, and compared with the dicing tape 10 of the example. The pick-up property was significantly inferior.

Further, a PE / PP / PE (type 2 resin, 3-layer structure) polyolefin resin having a bending elasticity (G') of 413.0 MPa, which exceeds the upper limit of the bending elasticity (G') range of the present invention. The dicing tape 10 (o) of Comparative Example 2 using the base film 1 (l) made of the base film 1 had good splittability at the time of dicing, but the first layer having the first surface of the base film 1 ( Due to the low crystal melting point of PE on the surface side in contact with the pressure-sensitive adhesive layer 2, a large amount of cutting chips are generated and adhered during dicing, and compared with the dicing tape 10 of the example, during dicing. The effect of suppressing cutting chips was inferior. Further, in the pick-up test, the pick-up success rate did not reach 100% at any of the push-up heights in the predetermined range, and many pick-up mistakes due to chip peeling failure or chip cracking were found. Compared with 10, the pick-up property was significantly inferior.

Further, a base film 1 made of a thermoplastic polyester elastomer of a PBT / PTMG copolymer having a flexural modulus (G') of 159.7 MPa, which exceeds the upper limit of the flexural modulus (G') range of the present invention. The dicing tape 10 (p) of Comparative Example 3 using (m) had good fragmentability during dicing and an effect of suppressing cutting chips, but in the pickup test, the evaluation results were similar to those of Comparative Example 1. Therefore, the pick-up property was significantly inferior to that of the dicing tape 10 of the example.

Further, a base film 1 made of a thermoplastic polyester elastomer of a PBT / PTMG copolymer having a flexural modulus (G') of 218.7 MPa, which exceeds the upper limit of the flexural modulus (G') range of the present invention. The dicing tape 10 (q) of Comparative Example 4 using (n) had good fragmentability during dicing and an effect of suppressing cutting chips, but in the pickup test, the evaluation results were similar to those of Comparative Example 2. Therefore, the pick-up property was significantly inferior to that of the dicing tape 10 of the example.

Subsequently, as shown in Tables 5 to 7, the dicing die bond films 20 of Examples 14 to 19 using the base films 1 (a), (c) to (e), and (h) satisfying the requirements of the present invention. Regarding (a) to (f), it was confirmed that favorable results were obtained in both the evaluation of the dicing characteristics and the pick-up property.

When the examples are compared in detail, the dicing die bond films 20 of Examples 15 and 16 and Examples 18 and 19 using the base film 1 having a flexural modulus (G') in the range of 17 MPa or more and 115 MPa or less are Dicing characteristics (suppression of cutting chips) as compared with the dicing die bond film 20 of Examples 14 and 17, which used the base film 1 having a flexural modulus (G') of 10.4 MPa and 133.9 MPa, respectively. It was also found to be compatible and excellent at a high level in the evaluation of pick-up property (minimum push-up height at which the pick-up success rate is 100%). That is, the dicing die bond film 20 of Example 14 using the base film 1 having a bending elastic modulus (G') of 10.4 MPa suppresses cutting chips as compared with the dicing die bond film 20 of other examples. The effect was slightly inferior. The dicing die bond film 20 of Example 17 using the base film 1 having a flexural modulus (G') of 133.9 MPa has a pickup success rate of 100% as compared with the dicing die bond film 20 of other examples. The minimum push-up height was 400 μm, which was 50 μm larger than the 350 μm of the dicing die bond film 20 of the other embodiment, and the pick-up property was slightly inferior.

On the other hand, as shown in Tables 6 and 7, the dicing die bond films 20 (g) to (j) of Comparative Examples 5 to 8 using the base films 1 (k) to (n) that do not satisfy the requirements of the present invention. ) Was confirmed to be inferior to the dicing die bond films 20 (a) to (f) of Examples 14 to 19 in at least one of the evaluations of the dicing characteristics and the pick-up property.

Specifically, the PP / EVA / PP (two-kind resin, three-layer structure) having a flexural modulus (G') of 146.5 MPa, which exceeds the upper limit of the flexural modulus (G') range of the present invention. The dicing die bond film 20 (g) of Comparative Example 5 using the base film 1 (k) made of a polyolefin resin had good breakability at the time of dicing and an effect of suppressing cutting chips, but in a pickup test, it was found. The pickup success rate does not reach 100% at any of the push-up heights in the predetermined range, and especially when the push-up height is 450 μm or more, many pick-up mistakes due to chip cracking are found, and the dicing die bond film 20 of the embodiment is used. The pickability was significantly inferior in comparison.

Further, a PE / PP / PE (type 2 resin, 3-layer structure) polyolefin resin having a bending elasticity (G') of 413.0 MPa, which exceeds the upper limit of the bending elasticity (G') range of the present invention. The dicing die-bonded film 20 (h) of Comparative Example 6 using the base film 1 (l) made of the same material had good breakability at the time of dying, but was the first layer having the first surface of the base film 1. Due to the low crystal melting point of PE (on the surface side in contact with the pressure-sensitive adhesive layer 2), a large amount of cutting chips are generated and adhered during dying. The effect of suppressing cutting chips at that time was inferior. Further, in the pick-up test, the pick-up success rate does not reach 100% at any of the push-up heights in the predetermined range, and many pick-up mistakes due to chip peeling failure or chip cracking are observed. Compared with 20, the pick-up property was significantly inferior.

Further, a base film 1 made of a thermoplastic polyester elastomer of a PBT / PTMG copolymer having a flexural modulus (G') of 159.7 MPa, which exceeds the upper limit of the flexural modulus (G') range of the present invention. The dicing die bond film 20 (i) of Comparative Example 7 using (m) had good fragmentability during dicing and an effect of suppressing cutting chips, but was evaluated to be about the same as that of Comparative Example 5 in the pickup test. As a result, the pick-up property was significantly inferior to that of the dicing die bond film 20 of the example.

Further, a base film 1 made of a thermoplastic polyester elastomer of a PBT / PTMG copolymer having a flexural modulus (G') of 218.7 MPa, which exceeds the upper limit of the flexural modulus (G') range of the present invention. The dicing die bond film 20 (q) of Comparative Example 8 using (n) had good fragmentability at the time of dicing and an effect of suppressing cutting chips, but in the pickup test, the evaluation was about the same as that of Comparative Example 6. As a result, the pick-up property was significantly inferior to that of the dicing die bond film 20 of the example.

1 ... Base film,
2 ... Adhesive layer,
3 ... Die bond film (adhesive layer),
10 ... Dicing tape,
20 ... Dicing die bond film,
30 ... Semiconductor wafer,
30a ... Semiconductor chip,
40 ... Ring frame,
50 ... Adsorption collet,
60 ... Push-up pin (needle)

Claims (11)

The pressure-sensitive adhesive layer has a first surface formed on it and a second surface facing the first surface thereof.
A block copolymer composed of a hard segment (A) containing polyester as a main component and an aliphatic dicarboxylic acid and an aliphatic diol or an alicyclic diol, and a soft segment (B) containing an aliphatic polyether as a main component. A base film for dicing tape, which is made of a resin containing a thermoplastic polyester elastomer.
The base film was bent at 23 ° C. in the range of 10 MPa or more and 135 MPa or less when the dynamic viscoelasticity was measured under the conditions of a frequency of 1 Hz and a heating rate of 0.5 ° C./min in a double-sided beam bending mode. A base film having an elastic modulus (G'). The base film according to claim 1, wherein the base film has a flexural modulus (G') at 23 ° C. in the range of 17 MPa or more and 115 MPa or less. The soft segment (B) is characterized by having a content (copolymerization amount) in the range of 51% by mass or more and 73% by mass or less with respect to the total mass of the hard segment (A) and the soft segment (B). The base film according to claim 1 or 2. The soft segment (B) is characterized by having a content (copolymerization amount) in the range of 55% by mass or more and 70% by mass or less with respect to the total mass of the hard segment (A) and the soft segment (B). The base film according to claim 1 or 2. The base film according to any one of claims 1 to 4, wherein the hard segment (A) is polybutylene terephthalate (PBT). Claim 1 to claim 1, wherein the soft segment (B) is an ethylene oxide addition polymer (PPG-EO addition polymer) of poly (tetramethylene oxide) glycol (PTMG) and / or poly (propylene oxide) glycol. 5. The base film according to any one of 5. Claim 1 is characterized in that the base film is composed of a single resin layer, and the resin containing the thermoplastic polyester elastomer constituting the layer has a crystal melting point in the range of 160 ° C. or higher and 200 ° C. or lower. The base film according to any one of 6 to 6. The base film is composed of a plurality of laminated resin layers, and the resin containing the thermoplastic polyester elastomer constituting the layer having the first surface has a crystal melting point in the range of 160 ° C. or higher and 200 ° C. or lower. The base film according to any one of claims 1 to 6, which is characterized. The base film according to any one of claims 1 to 8, wherein the thickness is in the range of 70 μm or more and 155 μm or less. The base film according to any one of claims 1 to 9, wherein the elongation rate is in the range of 300% or more and 700% or less. A dicing tape comprising the base film according to any one of claims 1 to 10 and an adhesive layer formed on the surface thereof.

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