JP2021165422A - Sputtering apparatus - Google Patents

Abstract

To provide a sputtering apparatus capable of adjusting a composition ratio without impairing the uniformity of in-plane distribution of the composition ratio when depositing a thin film of a multicomponent system by simultaneously sputtering targets of a dissimilar material.SOLUTION: A sputtering apparatus SM according to the invention includes a holding stage 2 for holding a substrate Sw to freely rotate around the substrate center. A target has a first target 51 containing a main component of a thin film of a multicomponent system and a second target 61 that has a sputtering area smaller than that of the first target and contains an accessory component of the thin film of the multicomponent system. The first target is arranged in an inclined attitude at a predetermined rotation angle around a Y-axis from a state in which it is opposite to the substrate in parallel so as to include the substrate center inside. The second target is inclined at a predetermined rotation angle around the Y-axis from a state in which it is adjacent to the first target and opposite to the substrate in parallel and is arranged in an inclined attitude at a predetermined rotation angle around the X-axis, being configured such that a rotation angle around at least the X-axis is freely adjustable.SELECTED DRAWING: Figure 2

Description

The present invention relates to a sputtering apparatus, and more particularly to an apparatus capable of simultaneously sputtering targets of different materials to form a multidimensional thin film.

Conventionally, a 3D-NAND flash memory is known as a large-capacity semiconductor storage element. In the manufacturing process of the 3D-NAND flash memory, there is a step of etching elongated holes having a high aspect ratio, and a hard mask in which a predetermined thin film is patterned and used as a mask is used for this. Tungsten film and carbon film have been widely used as the thin film constituting the hard mask, but when a carbon film is used, for example, a relatively thick film thickness of 1 μm or more is required. For this reason, attention has been paid to the use of a silicon carbide film (SiC film), which is a multidimensional thin film, as an alternative to the tungsten film and the carbon film.

As a method for efficiently forming a SiC film, it is conceivable to manufacture a SiC sintered target having a composition ratio within a predetermined range and to form a film by a sputtering method. It is difficult to increase it effectively (this becomes more pronounced as the target size increases (eg, the diameter of the sputtered surface is φ300 mm). For this reason, when a SiC film is formed on the surface of a film-forming object by a sputtering method using a SiC sintered target, there arises a problem that fine particles adhere to the surface of the film-forming object immediately after the film formation. .. Therefore, the target is divided into a first target composed of the main component (silicon) of the multidimensional thin film and a second target composed of the subcomponent (carbon) of the multidimensional thin film, and both are placed in a single vacuum chamber. It is proposed to set each target and sputter them at the same time to form a SiC film in which the composition ratio of the sub-component to the main component is, for example, in the range of 1% to 30%.

A sputtering apparatus (so-called multi-dimensional sputtering apparatus) that can be used for the film formation is known in Patent Document 1, for example. This one is provided with a vacuum chamber, and a holding stage for rotatably holding the substrate to be processed around the center of the substrate is provided in the lower part of the vacuum chamber. Then, a first target and a second target having the same target size are arranged on the upper part of the vacuum chamber facing the holding stage, respectively. In this case, the directions orthogonal to each other in the surface of the substrate to be processed are the X-axis direction and the Y-axis direction, and the first target and the second target are parallel to the substrate to be processed so that the center of the substrate is not included in the inside thereof. For example, they are fixedly arranged in a posture of being inclined at a predetermined rotation angle around the Y-axis from a state in which they are arranged so as to face each other on both sides in the X-axis direction.

Here, if the first target and the second target having the same target size are arranged in the vacuum chamber as in the conventional sputtering apparatus, there arises a problem that the apparatus size is increased. Further, when forming a multidimensional thin film by a sputtering device, if the composition ratio of the sub-component to the main component is adjusted within a predetermined range, the input power to each target and the pressure in the vacuum chamber at the time of film formation are used. Sputtering conditions such as (divided pressure of sputtered gas such as rare gas introduced at the time of film formation) will be adjusted. However, if the sputter conditions are changed, the distribution of sputter particles scattered from the target when they reach the substrate to be processed may change, and the in-plane distribution of the composition ratio may change. In such a case, the conventional sputtering apparatus has a problem that the uniformity of the in-plane distribution of the composition ratio cannot be substantially readjusted.

Japanese Unexamined Patent Publication No. 2013-57108

In view of the above points, it is possible to adjust the composition ratio without impairing the uniformity of the in-plane distribution of the composition ratio when forming a multidimensional thin film by simultaneously sputtering targets of different materials. An object of the present invention is to provide a sputtering apparatus capable of downsizing the apparatus.

In order to solve the above problems, the sputtering apparatus of the present invention for sputtering a target in a vacuum chamber to form a multidimensional thin film on the surface of a substrate to be processed, which is arranged to face the target, provides the substrate to be processed. A holding stage that rotatably holds around the center of the substrate is provided, and the target includes a first target containing the main component of the multidimensional thin film and subcomponents of the multidimensional thin film having a smaller sputtered surface area than the first target. It has a second target, and the directions orthogonal to each other in the surface of the substrate to be processed are the X-axis direction and the Y-axis direction, and the first target faces the substrate to be processed so as to include the center of the substrate inward. It is installed in a posture that is inclined at a predetermined rotation angle around the Y-axis from the arranged state, and the second target is placed adjacent to the first target and opposed to the substrate to be processed in parallel to the substrate to be processed. It is characterized in that it is installed in a posture in which it is tilted at a rotation angle and tilted at a predetermined rotation angle around the X axis, and at least the rotation angle around the X axis is adjustable.

Here, when the composition ratio of the sub-component to the main component is, for example, in the range of 1% to 30%, more preferably 10% to 20%, the ratio of the main component is relatively high. Therefore, when the first target and the second target are simultaneously sputtered to form a multidimensional thin film, it is better to preferentially supply the main component to the substrate to be processed for better film formation efficiency. Therefore, in the present invention, the first target is arranged in a posture of being inclined at a predetermined rotation angle around the Y axis from a state in which the substrate is arranged parallel to the substrate to be processed so as to include the center of the substrate in the inside thereof. On the other hand, the area of the sputtered surface of the second target is smaller than that of the first target (for example, the area of the sputtered surface of the second target with respect to the first target is halved or less) so that the second target is adjacent to the first target. From the state of being arranged parallel to the substrate to be processed, they are arranged in a posture of being inclined at a predetermined rotation angle around the Y axis. As a result, the device size can be made smaller than that of the conventional example. In this case, if the X-axis and Y-axis passing through the center of the second target are rotated by a predetermined angle around the center of the first target and the second target is offset with respect to the first target, the device can be further miniaturized. It can be planned. In the present invention, the "X-axis direction and Y-axis direction" refer to the X'axis direction and Y in the surface of the substrate to be processed when the X-axis and Y-axis passing through the center of the substrate are rotated around the center of the substrate. 'It shall also include the axial direction.

As described above, in the state where each target is arranged, a sputter gas such as a rare gas is introduced into the vacuum chamber at a predetermined flow rate, and a predetermined power having a negative potential for each of the first and second targets, for example, depending on the target type. Is charged to sputter each of the first and second targets. Then, the sputter particles scattered from each target adhere to and accumulate on the surface of the substrate to be processed, which is rotated at a predetermined rotation speed, and a multidimensional thin film is formed. On the other hand, when adjusting the composition ratio of the sub-component to the main component, the sputter conditions such as the input power to each target and the pressure in the vacuum chamber at the time of film formation (partial pressure of sputter gas) are adjusted. Attempts to adjust the composition ratio over a relatively wide range of% to 30% may impair the uniformity of the in-plane distribution of the composition ratio. The inventors of the present application have conducted extensive research and found that the in-plane distribution of the composition ratio of the sub-component to the main component can be adjusted by changing the rotation angle of the second target around the X-axis. Therefore, the second target is tilted around the Y-axis at a predetermined rotation angle, and is installed in a posture of being tilted at a predetermined rotation angle around the X-axis, and at least the rotation angle around the X-axis can be adjusted. By doing so, the composition ratio can be adjusted without impairing the uniformity of the in-plane distribution of the composition ratio.

In the present invention, it is preferable to provide a tilting means for transmitting power from outside the vacuum chamber to tilt the second target around at least one of the X-axis and the Y-axis at a predetermined rotation angle. This makes it possible to realize a configuration that enables adjustment of the in-plane distribution of the composition ratio without opening the vacuum chamber to the atmosphere. In this case, it is possible to cope with the case where the scattering distribution of the sputtered particles from each target changes due to the erosion of the first target and the second target, which is advantageous.

Further, in the present invention, the distance between the sputtered surface of the second target and the center of the substrate is set longer than the distance between the sputtered surface of the first target and the center of the substrate, and the sputtered surface is set in front of the sputtered surface of the second target. A configuration may be adopted in which a tubular protective plate provided so as to surround the protective plate and a shutter for closing the opening of the protective plate so as to be openable and closable are provided. According to this, in order to reduce the cross-contamination of each target, specifically, the composition ratio of the sub-component to the main component (for example, to a few percent), the power input to the second target is reduced. When set, the surface of the second target can be contaminated with sputter particles scattered from the first target, or the surface of the other target can be contaminated during so-called pre-sputtering associated with the replacement of one of the targets. It can be suppressed and is advantageous.

The cross-sectional view which shows typically the sputtering apparatus of embodiment of this invention. The plan view of the sputtering apparatus shown in FIG.

Hereinafter, referring to the drawings, the substrate to be processed is a silicon wafer (hereinafter, simply referred to as “substrate Sw”), a first target and a second target are provided in the upper part of the vacuum chamber, and a holding stage is provided in the lower part thereof. A multidimensional thin film with good in-plane uniformity of film thickness distribution is formed on the surface of the substrate Sw by sputtering the target with a composition ratio in a relatively wide range of, for example, 1% to 30%, more preferably 10% to 20%. An embodiment of the sputtering apparatus of the present invention will be described by taking what is possible as an example.

With reference to FIGS. 1 and 2, the SM is a magnetron-type (multidimensional) sputtering apparatus of the present embodiment. The sputtering apparatus SM includes a vacuum chamber 1, and a holding stage 2 is arranged in the lower center of the vacuum chamber 1. Although not particularly illustrated, a chuck plate having an electrostatic chuck is provided on the upper surface of the holding stage 2, and the substrate Sw can be sucked and held. As for the structure of the electrostatic chuck, known ones such as a unipolar type and a bipolar type can be used, and further description thereof will be omitted. The holding stage 2 is also connected to a rotating shaft 21 provided by penetrating the lower wall of the vacuum chamber 1 (via a vacuum seal (not shown)), and the substrate Sw is attracted and held by the holding stage 2 by the motor 22. Can be rotated at a predetermined rotation speed around the center line Cl passing through the center Sc of the substrate. In the following, the directions orthogonal to each other in the Sw plane of the substrate are defined as the X-axis direction and the Y-axis direction (see FIG. 2).

Exhaust ports 31 and 31 are opened in the lower wall of the vacuum chamber 1, and an exhaust pipe 33 from the vacuum pump 32 is connected to the exhaust ports 31 and 31 to evacuate the inside of the vacuum chamber 1 at a predetermined exhaust speed. Can be done. As the vacuum pump 32, a cryopump, a turbo molecular pump, a rotary pump, or the like is used. Further, gas introduction holes 41, 41 are opened at predetermined positions on the side wall of the vacuum chamber 1, gas introduction pipes 42, 42 are connected to the gas introduction holes 41, 41, and mass flow controllers 43, 43 interposed therein are connected. The sputter gas whose flow rate is controlled by the above can be introduced into the vacuum chamber 1 in a vacuum atmosphere. As the sputtering gas, a rare gas such as argon gas introduced when forming plasma in the vacuum chamber 1 is used. The first and second cathode units Cu1 and Cu2 are detachably attached to the upper part of the vacuum chamber 1 so as to face the substrate Sw on the holding stage 2.

The first cathode unit Cu1 includes a first target 51 composed of a main component of a multidimensional thin film (for example, silicon in the case of forming a SiC film as a multidimensional thin film). The first target 51 has a columnar contour (that is, the spatter surface 51a has a circular contour), and a backing plate 52 is joined to the back surface of the first target 51 which is on the back side of the sputter surface 51a. There is. A cylindrical mounting member 53 is further provided on the back surface of the packing plate 52, and a flange portion 53a bent at a substantially right angle is formed at one end of the mounting member 53. The first upper wall portion 11a of the vacuum chamber 1 to which the first cathode unit Cu1 is attached is inclined at a predetermined angle around the Y axis (that is, lower from the center side of the vacuum chamber 1 toward the outside thereof). A first mounting opening 11b is provided at a predetermined position of the first upper wall portion 11a to allow the first target 51 to be inserted.

The first target 51 has an area larger than the film formation surface (upper surface in FIG. 1) of the substrate Sw, but even in the mounting posture of the first cathode unit Cu1 on the first upper wall portion 11a, the substrate center Sc is the same. The area of the sputtered surface 51a is set so as to be included in the inside (for example, the area ratio of the sputtered surface 51a to the film-forming surface of the substrate Sw is in the range of 1-1.46). The angle at which the first upper wall portion 11a is inclined is appropriately set in consideration of the film thickness distribution when the first target 51 is sputtered and a film is formed on the rotating substrate Sw. Then, the first mounting opening 11b is inserted with the sputter surface 51a side at the top, and the flange portion 53a is passed through the bellows pipe 54 as a vacuum seal on the outer surface of the first upper wall portion 11a located on the peripheral edge of the first mounting opening 11b. The first cathode unit Cu1 is attached to the first upper wall portion 11a by installing the cathode unit Cu1 so as to be in contact with the entire circumference thereof. As a result, the sputter surface 51a of the first target 51 faces the holding stage 2 side (downward in FIG. 1) and is predetermined around the Y axis following the first upper wall portion 11a of the vacuum chamber 1. The posture is inclined at an angle (the sputter surface 51a includes the substrate center Sc in the inside). At this time, the bellows tube 54 makes it possible to maintain the inside of the vacuum chamber 1 in an airtight manner even when the inclination angle of the sputtering surface 51a is changed as described later. Further, in a state where the first cathode unit Cu1 is attached to the first upper wall portion 11a, a cylindrical protective plate 12 is installed in the vacuum chamber 1 so as to surround the circumference of the first target 51. ..

Rotating shafts 55a and 55b are projected on both sides of the mounting member 53 in the Y-axis direction, and one rotating shaft 55a is connected to a stepping motor 56a that rotationally drives the rotating shaft 55a around the axis, and the other rotating shaft 55b is connected to the stepping motor 56a. It is pivotally supported by a bearing member 56b. Then, when the rotation shafts 55a and 55b are rotated by the stepping motor 56a, the mounting member 53 is rotated around the Y-axis at a predetermined rotation angle (for example, 4 degrees or less), and the sputter surface 51a is XY. The inclination angle with respect to the plane is changed, and the film thickness distribution when the film is formed on the rotating substrate Sw can be adjusted. Further, the first cathode unit Cu1 includes a magnet unit 57 arranged in the inner space of the mounting member 53 located outside the vacuum chamber 1. The magnet unit 57 generates a magnetic field in the space below the sputtering surface 51a of the first target 51, captures electrons and the like ionized below the sputtering surface 51a during sputtering, and efficiently collects the sputtered particles scattered from the first target 51. It has a closed magnetic field or cusp magnetic field structure that ionizes well. In FIGS. 1 and 2, reference numeral 57a is a motor for rotationally driving the magnet unit 57, and a known magnet unit 57 can be used. Therefore, the first cathode unit Cu1 is included in the above description. Is omitted. Further, although not particularly illustrated and described, the output from the sputtering power source is connected to the first target 51 so that a predetermined power or high frequency power having a negative potential can be applied to the first target 51.

On the other hand, the second cathode unit Cu2 includes a second target 61 composed of an auxiliary component of the multidimensional thin film (for example, carbon in the case of forming a SiC film as the multidimensional thin film). The second target 61 also has a columnar contour (that is, the spatter surface 61a has a circular contour), and the backing plate 62 is joined to the back surface of the second target 61 which is on the back side of the sputter surface 61a. ing. A cylindrical mounting member 63 is provided on the back surface of the packing plate 62, and a flange portion 63a bent at a substantially right angle is formed at one end of the mounting member 63. The second upper wall portion 13a of the vacuum chamber 1 to which the second cathode unit Cu2 is mounted also also has a predetermined angle around the Y axis (that is, lowers from the center side of the vacuum chamber 1 toward the outside thereof). A second mounting opening 13b, which is formed so as to be inclined and allows the second target 61 to be inserted, is provided at a predetermined position of the second upper wall portion 13a.

The second upper wall portion 13a is provided so as to be offset around the center line Cl with respect to the first upper wall portion 11a to which the first cathode unit Cu1 is attached in order to reduce the size of the apparatus. Specifically, the second upper wall portion 13a, and thus the second upper wall portion 13a, is located at a position where the X-axis and the Y-axis are rotated around the center line Cl at a predetermined rotation angle (for example, in the range of 30 to 60 degrees or less in the counterclockwise direction). , The second target 61 of the second cathode unit Cu2 is present (see FIG. 2). In this case, the axes in the XY plane when the X-axis and the Y-axis are rotated around the center Sc of the substrate are defined as the X'axis direction and the Y'axis direction. Further, the height of the second upper wall portion 13a from the bottom surface of the vacuum chamber 1 is set to be higher than that of the first upper wall portion 11a, and in the mounted state of the first and second cathode units Cu1 and Cu2, respectively. The sputtered surface 61a of the second target 61 is located above the sputtered surface 51a of the first target 51 when viewed from the substrate Sw (in other words, as shown in FIG. 1, the sputtered surface of the second target 61). The distance between the 61a and the substrate center Sc is set longer than the distance between the sputter surface 51a of the first target 51 and the substrate center Sc). Further, in a state where the second cathode unit Cu2 is attached to the second upper wall portion 13a, a cylindrical protective plate 14 is installed in the vacuum chamber 1 so as to surround the circumference of the second target 61. .. In this case, the length of the adhesive plate 14 is set so that when the first target 51 is sputtered, the sputtered particles scattered from the sputtered surface 51a do not directly adhere to the sputtered surface 61a of the second target 61. Further, a plate-shaped shutter 15a that covers the lower end opening of the cylindrical protective plate 14 so as to be openable and closable is provided, and the shutter 15a is moved in the XY'plane by a driving means provided with the motor 15b. I am trying to do it. Since a known driving means is used, further description thereof will be omitted.

The area of the sputtered surface 61a of the second target 61 is smaller than that of the first target 51 (for example, considering the composition ratio of the multidimensional thin film and the like, the sputtered surface 61a of the second target 61 with respect to the sputtered surface 51a of the first target 51). However, even in the mounting posture of the second cathode unit Cu2 on the second upper wall portion 13a, a part of the sputtering surface 61a is located directly above the outer edge portion of the substrate Sw. I am trying to do it. Then, the second mounting opening 13b is inserted with the sputter surface 61a side at the top, and the flange portion 63a is passed through the bellows pipe 64 as a vacuum seal on the outer surface of the second upper wall portion 13a located on the peripheral edge of the second mounting opening 13b. The second cathode unit Cu2 is attached to the second upper wall portion 13a by installing the second cathode unit Cu2 so as to be in contact with the entire circumference thereof. As a result, the sputter surface 61a of the second target 61 faces the holding stage 2 side (downward in FIG. 1) and tilts at a predetermined angle around the Y'axis following the second upper wall portion 13a. It will be in a good posture. At this time, similarly to the above, the bellows tube 64 makes it possible to maintain the airtightness in the vacuum chamber 1 even when the inclination angle of the sputtering surface 61a is changed as described later.

A first rotating shaft 65a is projected from one end of the mounting member 63 in the X'axis direction, and the first rotating shaft 65a is connected to a first stepping motor 66a that rotationally drives the first rotating shaft 65a around the axis. Further, the second rotating shafts 65b and 65c are also provided at both ends of the mounting member 63 in the Y'axis direction. One of the rotating shafts 65b is connected to a second stepping motor 66b that rotationally drives the rotating shaft 65b around the axis. In this case, the first rotating shaft 65a and both second rotating shafts 65b and 65c are pivotally supported by bearings (not shown) provided on the support frame 67 having a U-shape in a plan view. Then, when the first rotating shaft 65a is rotated by the first stepping motor 66a, the mounting member 63 is rotated around the X'axis at a predetermined rotation angle (for example, ± 5 degrees or less). Then, when the second rotating shafts 65b and 65c are rotated by the second stepping motor 66b, the mounting member 63 is rotated around the Y'axis at a predetermined rotation angle (for example, ± 5 degrees or less). , The angle of inclination of the sputter surface 61a with respect to the XY plane is changed. The range in which the tilt angle can be changed includes, for example, the types of the targets 51 and 61 that constitute the main component and the sub-component of the multidimensional thin film, and the initial tilt angle of the second target 61 (in other words, the second upper). The angle of inclination of the wall portion 13a with respect to the XY plane) is appropriately set. This makes it possible to adjust the composition ratio of the subcomponents of the multidimensional thin film and the in-plane distribution of the composition ratio. In the present embodiment, the above-mentioned parts such as the stepping motors 66a and 66b and the rotating shafts 65a to 65c are tilted by transmitting power from outside the vacuum chamber 1 to incline the second target 61 at least around the Y axis at a predetermined rotation angle. Construct means. The second cathode unit Cu2 also includes a magnet unit 68 arranged in the inner space of the mounting member 63 located outside the vacuum chamber 1 as described above. Further, although not particularly illustrated and described, an output from a sputtering power source is connected to the second target 61 so that a predetermined power or high frequency power having a negative potential can be applied to the second target 61.

When a predetermined multidimensional thin film is formed on the substrate Sw by the sputtering apparatus SM, the substrate Sw is carried onto the holding stage 2 by a vacuum transfer robot (not shown), and the chuck plate of the holding stage 2 (not shown). ) The substrate Sw is installed on the upper surface and is adsorbed and held (in this case, the upper surface of the substrate Sw is the film-forming surface). Next, when the inside of the vacuum chamber 1 is evacuated to a predetermined pressure (for example, 1 × 10 ^-5 Pa), the holding stage 2 is rotated in one direction at a predetermined rotation rate by the motor 22, and is controlled by the mass flow controller 43. Argon gas as a sputter gas is introduced at a constant flow rate, and at the same time, a preset power is applied to the first target 51 and the second target 61 from a sputter power source (not shown). As a result, plasma is formed in the space in front of the first target 51 and the second target 61, respectively, and the targets 51 and 61 are sputtered by the ions of the argon gas in the plasma, and the sputtered particles from the targets 51 and 61 are sputtered. However, it adheres to and accumulates on the upper surface of the rotating substrate Sw to form a predetermined multidimensional thin film.

According to the above embodiment, the device size can be reduced as compared with the conventional example. In addition to that, when adjusting the composition ratio of the sub-component to the main component, the sputter conditions such as the input power to each of the targets 51 and 61 and the pressure in the vacuum chamber 1 at the time of film formation (split gas partial pressure) are adjusted. Therefore, even if the uniformity of the in-plane distribution of the composition ratio is impaired, if the rotation angle of the second target 61 is adjusted at least one of the X'axis and the Y'axis, the in-plane distribution of the composition ratio can be adjusted. The composition ratio can be adjusted without impairing the uniformity. This can also be used when the scattering distribution of the sputtered particles from the targets 51 and 61 changes due to the erosion of the first target 51 and the second target 61. Moreover, when the targets 51 and 61 are sputtered, the sputtered surface 61a of the second target 61 is contaminated with the sputtered particles scattered from the first target 51, and so-called replacement of one of the targets 51 and 61 is caused. During pre-sputtering, it is possible to prevent the sputtered surfaces 61a and 51a of the other targets 61 and 51 from being contaminated as much as possible.

Next, in order to confirm the effect of the present invention, the substrate Sw is made of a silicon wafer of φ300 mm, the first target 51 is made of silicon of φ440 mm, and the second target 61 is made of amorphous carbon of φ125 mm. A SiC film was formed on Sw. As the sputtering conditions, the input power to the first target 51 was set to 2 kW, the input power to the second target 61 was set to 0.5 kW, the rotation speed of the substrate Sw was set to 120 rpm, and the sputtering time was set to 100 sec. Argon gas was used as the sputtering gas, and the partial pressure of the sputtering gas was set to 0.2 Pa during sputtering. Further, the distance between the first target 51 and the substrate center Sc is 250 mm, and the distance between the second target 61 and the substrate center Sc is 285 mm. At this time, the distance around the Y axis of the first target 51 with respect to the XY plane is set. The inclination angle was 15 degrees, the inclination angle of the second target 61 with respect to the XY plane around the Y'axis was 22 degrees, and the inclination angle of the second target 61 with respect to the XY plane around the X'axis was 38 degrees. Under such conditions, the first target 51 and the second target 61 are sputtered to form a SiC film on the surface of the substrate Sw, and the in-plane distribution of the composition ratio and the composition ratio of the substrate Sw in the radial direction by a known analyzer. Was measured. According to this, the composition ratio of silicon and carbon was 15:85, and the uniformity of the in-plane distribution was 1%. Therefore, the X'axis and the Y'axis are rotated counterclockwise, respectively, and the inclination angle around the Y'axis of the second target 61 with respect to the XY plane is in the range of +4 degrees or less, and the X'of the second target 61 with respect to the XY plane. When the tilt angle around the axis was changed in the range of +4 degrees and the SiC film was formed again, the composition ratio of silicon and carbon was in the range of 10:90 to 20:80, and the in-plane distribution was uniform. Was 1 to 2%, and it was confirmed that the composition ratio and the in-plane distribution could be adjusted.

Although the embodiments of the present invention have been described above, various modifications are possible as long as they do not deviate from the scope of the technical idea of the present invention. In the above embodiment, as the tilting means, parts such as stepping motors 66a and 66b and rotating shafts 65a to 65c have been described as an example, but power is transmitted from outside the vacuum chamber 1 to X'the second target 61. It is not limited to this as long as it can be tilted at a predetermined rotation angle around the axis and the Y'axis. Further, in the above embodiment, in order to reduce the size, the position of the second target 61 with respect to the first target 51 is offset on the XY plane and upward as an example, but the arrangement of the second target 61 (that is, that is) , The position of the second cathode unit Cu2) is not limited to the above, and various layouts can be adopted. Further, in the above embodiment, the upper wall portions 11a and 13a of the vacuum chamber 1 to which the first and second cathode units Cu1 and Cu2 are attached are inclined with respect to the XY plane, as an example. If the first and second targets 51 and 61 can be arranged at an angle and the inclination angle can be adjusted, the present invention is not limited to this.

SM ... Sputtering device, Cu1, Cu2 ... Cathode unit, 1 ... Vacuum chamber, 2 ... Holding stage, 11a, 13a ... Vacuum chamber upper wall part, 12, 14 ... Adhesive plate, 15a ... Shutter, 51 ... First target (Main component), 61 ... Second target (secondary component), Sw ... Substrate (Substrate to be processed), Sc ... Substrate center, 65a to 65c ... Rotating shaft (component of tilting means), 66a, 66b ... Stepping motor (stepping motor) Components of tilting means).

Claims (3)

A sputtering device for sputtering a target in a vacuum chamber to form a multidimensional thin film on the surface of a substrate to be processed, which is arranged to face the target.
In those provided with a holding stage that rotatably holds the substrate to be processed around the center of the substrate,
The target has a first target containing the main component of the multidimensional thin film and a second target containing a subcomponent of the multidimensional thin film having a smaller sputtered surface area than the first target.
The directions orthogonal to each other in the surface of the substrate to be processed are the X-axis direction and the Y-axis direction, and the first target is arranged parallel to the substrate to be processed so as to include the center of the substrate in the Y-axis direction. It is installed in a posture tilted at a predetermined rotation angle, and the second target is tilted at a predetermined rotation angle around the Y axis from a state in which the second target is adjacent to the first target and is arranged parallel to the substrate to be processed, and X. A sputtering apparatus characterized in that it is installed in a posture inclined around an axis at a predetermined rotation angle, and at least the rotation angle around the X axis is adjustable. The sputtering apparatus according to claim 1, further comprising a tilting means for transmitting power from outside the vacuum chamber to incline the second target around at least one of the X-axis and the Y-axis at a predetermined rotation angle. .. The distance between the sputtered surface of the second target and the center of the substrate is set longer than the distance between the sputtered surface of the first target and the center of the substrate, and is provided in front of the sputtered surface of the second target so as to surround the sputtered surface. The sputtering apparatus according to claim 1 or 2, further comprising a cylindrical protective plate and a shutter for opening and closing the opening of the protective plate so as to be openable and closable.

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