JP2021130197A - Release film for semiconductor encapsulation process and manufacturing method of electronic parts using the same - Google Patents
Release film for semiconductor encapsulation process and manufacturing method of electronic parts using the same Download PDFInfo
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- JP2021130197A JP2021130197A JP2018097837A JP2018097837A JP2021130197A JP 2021130197 A JP2021130197 A JP 2021130197A JP 2018097837 A JP2018097837 A JP 2018097837A JP 2018097837 A JP2018097837 A JP 2018097837A JP 2021130197 A JP2021130197 A JP 2021130197A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
- B29C33/68—Release sheets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Abstract
Description
本発明は、半導体封止プロセス用離型フィルム及びそれを用いた電子部品の製造方法に関する。 The present invention relates to a release film for a semiconductor encapsulation process and a method for manufacturing an electronic component using the same.
近年、半導体チップを樹脂で封止するプロセスにおいて、樹脂が硬化した後の封止樹脂と金型との離型性を得るために、金型内面と半導体チップとの間に離型フィルムを配置する方法が採られている。 In recent years, in the process of sealing a semiconductor chip with a resin, a mold release film is placed between the inner surface of the mold and the semiconductor chip in order to obtain mold releasability between the sealing resin and the mold after the resin is cured. The method of doing is adopted.
このような離型フィルムとしては、離型性および耐熱性に優れるテトラフルオロエチレン−エチレン共重合体（ＥＴＦＥ）樹脂フィルム（例えば特許文献１）が主に用いられている。しかしながら、これらの離型フィルムは、金型内面に熱分解生成物が付着して金型を汚染することにより外観不良を引き起こし易いという問題や、単価が高いという問題があった。 As such a release film, a tetrafluoroethylene-ethylene copolymer (ETFE) resin film (for example, Patent Document 1) having excellent releasability and heat resistance is mainly used. However, these release films have problems that thermal decomposition products adhere to the inner surface of the mold and contaminate the mold, which tends to cause poor appearance and a high unit price.
これに対して、単価が安いポリスチレン系樹脂の離型フィルムも提案されている（例えば特許文献２）。しかしながら、特許文献２の離型フィルムは耐熱性に劣り、高温での封止プロセスにおいて皺が発生しやすいなどの問題があった。 On the other hand, a polystyrene-based resin release film having a low unit price has also been proposed (for example, Patent Document 2). However, the release film of Patent Document 2 has a problem that it is inferior in heat resistance and wrinkles are likely to occur in the sealing process at a high temperature.
本発明は、このような事情を鑑みてなされたものであり、一定以上の離型性、金型追従性を有し、高温での封止プロセスにおいても皺の発生が少なく、かつ低コストで用いることができる半導体封止プロセス用離型フィルムを提供することを目的とする。 The present invention has been made in view of such circumstances, has a certain level of mold releasability and mold followability, is less likely to wrinkle even in a high temperature sealing process, and is inexpensive. It is an object of the present invention to provide a release film for a semiconductor encapsulation process that can be used.
すなわち、本発明者は、様々な樹脂について検討した結果、表面層（Ａ）と耐熱樹脂層（Ｂ）とを有する半導体封止プロセス用離型フィルムにおいて、前記表面層（Ａ）が４−メチル−ペンテン−１重合体を含み、前記半導体封止プロセス用離型フィルムの１８０℃の貯蔵弾性率（Ｅ’１）が２５０ＭＰａ以上１５００ＭＰａ以下とすることにより、一定以上の離型性、金型追従性を有し、高温での封止プロセスにおいても皺の発生が少ないことを見出し、本発明を完成するに至った。 That is, as a result of examining various resins, the present inventor has found that the surface layer (A) is 4-methyl in a release film for a semiconductor encapsulation process having a surface layer (A) and a heat-resistant resin layer (B). By setting the storage elasticity (E'1) of the release film for the semiconductor encapsulation process at 180 ° C., which contains the −penten-1 polymer, to 250 MPa or more and 1500 MPa or less, the releasability and mold follow-up of a certain level or more are achieved. It has been found that it has properties and less wrinkles are generated even in a sealing process at a high temperature, and the present invention has been completed.
上記課題を解決する本発明は、下記より構成される。
（１）表面層（Ａ）と耐熱樹脂層（Ｂ）とを有する半導体封止プロセス用離型フィルムであって、
前記表面層（Ａ）が４−メチル−ペンテン−１重合体を含み、
前記半導体封止プロセス用離型フィルムの１８０℃の貯蔵弾性率（Ｅ’１）が２５０ＭＰａ以上１５００ＭＰａ以下である、半導体封止プロセス用離型フィルム。
（２）表面層（Ａ）と耐熱樹脂層（Ｂ）とを有する半導体封止プロセス用離型フィルムであって、
前記表面層（Ａ）が４−メチル−ペンテン−１重合体を含み、
前記耐熱樹脂層（Ｂ）の１８０℃の貯蔵弾性率（Ｅ’１）が５００ＭＰａ以上２０００ＭＰａ以下である、半導体封止プロセス用離型フィルム。
（３）耐熱樹脂層（Ｂ）がポリエーテルスルフォン、ポリフェニルスルフォン、ポリアリレートから選択される少なくとも１種類の樹脂を含む、（１）又は（２）に記載の半導体封止プロセス用離型フィルム。
（４）以下の式１から算出される半導体封止プロセス用離型フィルムの１８０℃の強度（Ｆ）が５０００Ｎ／ｍｍ以上１３００００Ｎ／ｍｍ以下である、（１）から（３）いずれかに記載の半導体封止プロセス用離型フィルム。
１８０℃の強度（Ｆ）＝１８０℃の貯蔵弾性率（Ｅ’１）×厚み（ｍｍ）・・・式１
（５）前記半導体封止プロセス用離型フィルムの１８０℃の貯蔵弾性率（Ｅ’１）が２３℃の貯蔵弾性率（Ｅ’２）の０．５倍以上１．０倍以下である、請求項（１）、（３）又は（４）のいずれかに記載の半導体封止プロセス用離型フィルム。
（６）前記半導体封止プロセス用離型フィルムの厚さが２０μｍ以上１２５μｍ以下であり、前記耐熱樹脂層（Ｂ）の厚さが、前記半導体封止プロセス用離型フィルムの厚さの２０％以上９０％以下である、（１）から（５）いずれかに記載の半導体封止プロセス用離型フィルム。
（７）前記表面層（Ａ）と前記耐熱樹脂層（Ｂ）の間に、接着層（Ｃ）を有する、（１）から（６）いずれかに記載の半導体封止プロセス用離型フィルム。
（８）（１）から（７）のいずれかに記載の半導体封止プロセス用離型フィルムを封止装置に取り付ける取付工程と、
前記半導体封止プロセス用離型フィルムと基板上に配列された半導体を樹脂で封止する封止工程と、
前記半導体封止プロセス用離型フィルムを剥がす離型工程と、を有する電子部品の製造方法。
The present invention that solves the above problems is composed of the following.
(1) A release film for a semiconductor encapsulation process having a surface layer (A) and a heat-resistant resin layer (B).
The surface layer (A) contains a 4-methyl-pentene-1 polymer and contains
A release film for a semiconductor encapsulation process, wherein the storage elastic modulus (E'1) at 180 ° C. of the release film for a semiconductor encapsulation process is 250 MPa or more and 1500 MPa or less.
(2) A release film for a semiconductor encapsulation process having a surface layer (A) and a heat-resistant resin layer (B).
The surface layer (A) contains a 4-methyl-pentene-1 polymer and contains
A release film for a semiconductor encapsulation process in which the storage elastic modulus (E'1) of the heat-resistant resin layer (B) at 180 ° C. is 500 MPa or more and 2000 MPa or less.
(3) The release film for a semiconductor encapsulation process according to (1) or (2), wherein the heat-resistant resin layer (B) contains at least one resin selected from polyether sulphon, polyphenyl sulphon, and polyarylate. ..
(4) Described in any of (1) to (3), wherein the 180 ° C. strength (F) of the release film for the semiconductor encapsulation process calculated from the following formula 1 is 5000 N / mm or more and 130000 N / mm or less. Release film for semiconductor encapsulation process.
Strength (F) at 180 ° C = Storage elastic modulus at 180 ° C (E'1) x thickness (mm) ... Equation 1
(5) The storage elastic modulus (E'1) of the release film for the semiconductor encapsulation process at 180 ° C. is 0.5 times or more and 1.0 times or less of the storage elastic modulus (E'2) at 23 ° C. The release film for a semiconductor encapsulation process according to any one of claims (1), (3) or (4).
(6) The thickness of the release film for the semiconductor encapsulation process is 20 μm or more and 125 μm or less, and the thickness of the heat-resistant resin layer (B) is 20% of the thickness of the release film for the semiconductor encapsulation process. The release film for a semiconductor encapsulation process according to any one of (1) to (5), which is 90% or more.
(7) The release film for a semiconductor encapsulation process according to any one of (1) to (6), which has an adhesive layer (C) between the surface layer (A) and the heat-resistant resin layer (B).
(8) An attachment step of attaching the release film for the semiconductor encapsulation process according to any one of (1) to (7) to the encapsulation device, and
A sealing step of sealing the release film for the semiconductor sealing process and the semiconductors arranged on the substrate with a resin,
A method for manufacturing an electronic component, comprising a mold release step of peeling a mold release film for a semiconductor encapsulation process.
本発明によれば、一定以上の離型性、金型追従性を有し、高温での封止プロセスにおいても皺の発生が少なく、かつ低コストで用いることができる半導体封止プロセス用離型フィルムを提供することができる。 According to the present invention, a mold release property for a semiconductor encapsulation process, which has a certain level of mold releasability and mold followability, is less likely to wrinkle even in a high temperature encapsulation process, and can be used at low cost. Film can be provided.
以下、半導体封止プロセス用離型フィルムの種々の実施形態を説明し、ついで半導体封止プロセス用離型フィルムの製造方法及び電子部品の製造方法について説明するが、一実施形態について記載した特定の説明が他の実施形態についても当てはまる場合には、他の実施形態においてはその説明を省略している。 Hereinafter, various embodiments of the release film for the semiconductor encapsulation process will be described, and then a method for producing the release film for the semiconductor encapsulation process and a method for producing an electronic component will be described. If the description also applies to other embodiments, the description is omitted in the other embodiments.
［第一実施形態］
本発明の第一実施形態に係る半導体封止プロセス用離型フィルムは、表面層（Ａ）と耐熱樹脂層（Ｂ）とを有する半導体封止プロセス用離型フィルムであって、前記表面層（Ａ）が４−メチル−ペンテン−１重合体を含み、前記半導体封止プロセス用離型フィルムの１８０℃の貯蔵弾性率（Ｅ’１）が２５０ＭＰａ以上１５００ＭＰａ以下である半導体封止プロセス用離型フィルムである。
[First Embodiment]
The release film for a semiconductor encapsulation process according to the first embodiment of the present invention is a release film for a semiconductor encapsulation process having a surface layer (A) and a heat-resistant resin layer (B), and the surface layer ( A) contains a 4-methyl-pentene-1 polymer, and the release film for the semiconductor encapsulation process has a storage elasticity (E'1) at 180 ° C. of 250 MPa or more and 1500 MPa or less. It is a film.
（表面層（Ａ））
表面層（Ａ）に含まれる４−メチル−ペンテン−１重合体は、４−メチル−ペンテン−１の単独重合体であってもよく、また、それ以外の樹脂との共重合体であってもよい。４−メチル−ペンテン−１と共重合される樹脂としては、例えば炭素原子数２〜２０のオレフィンが挙げられる。炭素原子数２〜２０のオレフィンの例には、エチレン、プロピレン、１−ブテン、１−ヘキセン、１−ヘプテン、１−オクテン、１−デセン、１−テトラデセン、１−ヘキサデセン、１−ヘプタデセン、１−オクタデセン、１−エイコセン等が含まれる。これらのオレフィンは、単独であってもよいし、２種以上を組み合せてもよい。
本発明の一実施形態において、４−メチル−ペンテン−１重合体が共重合体である場合、４−メチル−ペンテン−１に由来する構成単位の割合は９０〜９９質量％であり、それ以外の樹脂に由来する構成単位の割合が１〜１０質量％であることが好ましい。
４−メチル−ペンテン−１重合体は、公知の方法で製造されうる。例えば、チーグラ・ナッタ触媒、メタロセン系触媒等の公知の触媒を用いた方法により製造できるが、例えば、三井化学株式会社製ＴＰＸ等、市販の共重合体であってもよい。
本発明の一実施形態において、表面層（Ａ）を構成する樹脂の１８０℃における貯蔵弾性率Ｅ’は、５ＭＰａ以上５０ＭＰａ以下である。１８０℃での貯蔵弾性率Ｅ’を５ＭＰａ以上とすることで、半導体封止プロセス用離型フィルムが柔らかくなりすぎて、封止プロセスにおいて皺が発生するのを抑制することができる。また、１８０℃での貯蔵弾性率Ｅ’を５０ＭＰａ以下とすることで、半導体封止プロセス用離型フィルムが硬すぎて金型追従性が低下するのを抑制することができる。
表面層（Ａ）の厚みは、特に制限はないが、１〜１００μｍであり、好ましくは３〜７５μｍであり、より好ましくは１０〜４０μｍである。
本発明の一実施形態において、表面層（Ａ）の厚さは、前記半導体封止プロセス用離型フィルムの厚さの１０％以上８０％以下であり、好ましくは２０％以上７０％以下であり、より好ましくは３０％以上６０％以下である。
表面層（Ａ）の表面は、必要に応じて鏡面仕上げを施してもよい。表面層（Ａ）の表面に鏡面仕上げを施す方法は、特に制限はないが、鏡面加工を施したロールを加圧圧着する等の一般的な方法が採用できる。また、表面層（Ａ）の表面は、凹凸形状を有していてもよい。表面層（Ａ）の表面に凹凸形状を付与する方法は、特に制限はないが、エンボス加工等の一般的な方法が採用できる。
(Surface layer (A))
The 4-methyl-pentene-1 polymer contained in the surface layer (A) may be a homopolymer of 4-methyl-pentene-1, or a copolymer with other resins. May be good. Examples of the resin copolymerized with 4-methyl-pentene-1 include olefins having 2 to 20 carbon atoms. Examples of olefins having 2 to 20 carbon atoms include ethylene, propylene, 1-butene, 1-hexene, 1-heptene, 1-octene, 1-decene, 1-tetradecene, 1-hexadecene, 1-heptadecene, 1 -Includes octadecene, 1-eikosen, etc. These olefins may be used alone or in combination of two or more.
In one embodiment of the present invention, when the 4-methyl-pentene-1 polymer is a copolymer, the proportion of the constituent units derived from 4-methyl-pentene-1 is 90 to 99% by mass, and other than that. The proportion of the structural unit derived from the resin is preferably 1 to 10% by mass.
The 4-methyl-pentene-1 polymer can be produced by a known method. For example, it can be produced by a method using a known catalyst such as a Ziegler-Natta catalyst or a metallocene catalyst, but a commercially available copolymer such as TPX manufactured by Mitsui Chemicals, Inc. may be used.
In one embodiment of the present invention, the storage elastic modulus E'at 180 ° C. of the resin constituting the surface layer (A) is 5 MPa or more and 50 MPa or less. By setting the storage elastic modulus E'at 180 ° C. to 5 MPa or more, it is possible to prevent the release film for the semiconductor encapsulation process from becoming too soft and causing wrinkles in the encapsulation process. Further, by setting the storage elastic modulus E'at 180 ° C. to 50 MPa or less, it is possible to prevent the mold release film for the semiconductor encapsulation process from being too hard and the mold followability from being lowered.
The thickness of the surface layer (A) is not particularly limited, but is 1 to 100 μm, preferably 3 to 75 μm, and more preferably 10 to 40 μm.
In one embodiment of the present invention, the thickness of the surface layer (A) is 10% or more and 80% or less, preferably 20% or more and 70% or less of the thickness of the release film for the semiconductor encapsulation process. , More preferably 30% or more and 60% or less.
The surface of the surface layer (A) may be mirror-finished, if necessary. The method of mirror-finishing the surface of the surface layer (A) is not particularly limited, but a general method such as pressure-pressing a mirror-finished roll can be adopted. Further, the surface of the surface layer (A) may have an uneven shape. The method of imparting an uneven shape to the surface of the surface layer (A) is not particularly limited, but a general method such as embossing can be adopted.
（耐熱樹脂層（Ｂ））
本実施形態における耐熱樹脂層を構成する樹脂は、表面層（Ａ）と耐熱樹脂層（Ｂ）とを有する半導体封止プロセス用離型フィルムにおいて、半導体封止プロセス用離型フィルムの１８０℃の貯蔵弾性率（Ｅ’１）が２５０ＭＰａ以上１５００ＭＰａ以下となるものであれば特に制限されない。例えば、ポリエーテルスルフォン、ポリフェニルスルフォン、ポリアリレート、ポリエーテルイミド、熱可塑性ポリイミドから選択される１種類以上の樹脂を用いることができる。
耐熱樹脂層（Ｂ）の厚みは、特に制限はないが、１〜１００μｍであり、好ましくは３〜７５μｍであり、より好ましくは１０〜２５μｍである。
本発明の一実施形態において、耐熱樹脂層（Ｂ）の厚さは、前記半導体封止プロセス用離型フィルムの厚さの２０％以上９０％以下であり、好ましくは３０％以上８０％以下であり、より好ましくは４０％以上７０％以下である。
耐熱樹脂層（Ｂ）の表面は、必要に応じて鏡面仕上げを施してもよい。耐熱樹脂層（Ｂ）の表面に鏡面仕上げを施す方法は、特に制限はないが、鏡面加工を施したロールを加圧圧着する等の一般的な方法が採用できる。また、耐熱樹脂層（Ｂ）の表面は、凹凸形状を有していてもよい。耐熱樹脂層（Ｂ）の表面に凹凸形状を付与する方法は、特に制限はないが、エンボス加工等の一般的な方法が採用できる。
(Heat-resistant resin layer (B))
The resin constituting the heat-resistant resin layer in the present embodiment is a release film for a semiconductor encapsulation process having a surface layer (A) and a heat-resistant resin layer (B) at 180 ° C. of the release film for the semiconductor encapsulation process. The storage elastic modulus (E'1) is not particularly limited as long as it is 250 MPa or more and 1500 MPa or less. For example, one or more resins selected from polyether sulphon, polyphenyl sulphon, polyarylate, polyetherimide, and thermoplastic polyimide can be used.
The thickness of the heat-resistant resin layer (B) is not particularly limited, but is 1 to 100 μm, preferably 3 to 75 μm, and more preferably 10 to 25 μm.
In one embodiment of the present invention, the thickness of the heat-resistant resin layer (B) is 20% or more and 90% or less, preferably 30% or more and 80% or less of the thickness of the release film for the semiconductor encapsulation process. Yes, more preferably 40% or more and 70% or less.
The surface of the heat-resistant resin layer (B) may be mirror-finished, if necessary. The method of mirror-finishing the surface of the heat-resistant resin layer (B) is not particularly limited, but a general method such as pressure-bonding a mirror-finished roll can be adopted. Further, the surface of the heat-resistant resin layer (B) may have an uneven shape. The method of imparting an uneven shape to the surface of the heat-resistant resin layer (B) is not particularly limited, but a general method such as embossing can be adopted.
（その他）
本発明の一実施形態において、表面層（Ａ）と耐熱樹脂層（Ｂ）との間に接着層（Ｃ）を有してもよい。接着層は、表面層（Ａ）と耐熱樹脂層（Ｂ）とを接着でき、樹脂封止工程や離型工程においても剥離しないものであり、本発明の効果を阻害しないものであれば、特に制限されないが、例えばエポキシ系熱硬化性接着剤やウレタン系接着剤を用いることができる。
また、本発明の一実施形態における各々の層は、本発明の効果を阻害しない範囲で、添加物を含有してもよい。本発明の効果を阻害しない範囲で、耐熱安定剤、耐候安定剤、発錆防止剤、耐銅害安定剤、帯電防止剤等、一般的に配合され得る公知の添加剤を含んでもよい。これらの添加剤の含有量は、各層を構成する樹脂１００質量部に対して、０．０１〜３０質量部とすることができる。
(others)
In one embodiment of the present invention, an adhesive layer (C) may be provided between the surface layer (A) and the heat-resistant resin layer (B). As the adhesive layer, the surface layer (A) and the heat-resistant resin layer (B) can be adhered to each other, and the adhesive layer does not peel off even in the resin sealing step or the mold release step. Although not limited, for example, an epoxy-based thermosetting adhesive or a urethane-based adhesive can be used.
In addition, each layer in one embodiment of the present invention may contain additives as long as the effects of the present invention are not impaired. Known additives that can be generally blended, such as heat-resistant stabilizers, weather-resistant stabilizers, rust inhibitors, copper damage-resistant stabilizers, and antistatic agents, may be contained as long as the effects of the present invention are not impaired. The content of these additives can be 0.01 to 30 parts by mass with respect to 100 parts by mass of the resin constituting each layer.
（フィルム）
本発明の一実施形態におけるフィルムの１８０℃の貯蔵弾性率（Ｅ’１）は、２５０ＭＰａ以上１５００ＭＰａ以下であり、半導体封止プロセス用離型フィルムとして有用である。本発明の一実施形態におけるフィルムの１８０℃の貯蔵弾性率（Ｅ’１）は、好ましくは４００ＭＰａ以上１４００ＭＰａ以下であり、より好ましくは５００ＭＰａ以上１０００ＭＰａ以下である。
本発明の一実施形態において、半導体封止プロセス用離型フィルムの１８０℃の強度（Ｆ）は５０００Ｎ／ｍｍ以上１３００００Ｎ／ｍｍ以下であり、好ましくは１４５００Ｎ／ｍｍ以上１０００００Ｎ／ｍｍ以下であり、より好ましくは１５５００Ｎ／ｍｍ以上５５０００Ｎ／ｍｍ以下である。また、半導体封止プロセス用離型フィルムの１８０℃の強度（Ｆ）は、式１に記載した方法で算出することができる。
１８０℃の強度（Ｆ）＝１８０℃の貯蔵弾性率（Ｅ’１）×厚み（ｍｍ）・・・式１
(the film)
The storage elastic modulus (E'1) of the film in one embodiment of the present invention at 180 ° C. is 250 MPa or more and 1500 MPa or less, which is useful as a release film for a semiconductor encapsulation process. The storage elastic modulus (E'1) of the film at 180 ° C. in one embodiment of the present invention is preferably 400 MPa or more and 1400 MPa or less, and more preferably 500 MPa or more and 1000 MPa or less.
In one embodiment of the present invention, the release film for a semiconductor encapsulation process has a strength (F) of 180 ° C. of 5000 N / mm or more and 130000 N / mm or less, preferably 14500 N / mm or more and 100,000 N / mm or less. It is preferably 15500 N / mm or more and 55000 N / mm or less. Further, the strength (F) of the release film for the semiconductor encapsulation process at 180 ° C. can be calculated by the method described in Equation 1.
Strength (F) at 180 ° C = Storage elastic modulus at 180 ° C (E'1) x thickness (mm) ... Equation 1
本発明の一実施形態において、半導体封止プロセス用離型フィルムの１８０℃の貯蔵弾性率（Ｅ’１）は、２３℃の貯蔵弾性率（Ｅ’２）の０．５倍以上１．０倍以下であり、好ましくは０．５５倍以上０．９倍以下であり、より好ましくは０．６倍以上０．８倍以下である。半導体封止プロセス用離型フィルムの１８０℃の貯蔵弾性率（Ｅ’１）が、２３℃の貯蔵弾性率（Ｅ’２）の０．５倍以上であることにより、より高温での封止プロセスにおいても半導体封止プロセス用離型フィルムが柔らかくなりすぎず、封止プロセスにおいて皺が発生するのを抑制することができる。
本発明の一実施形態において、半導体封止プロセス用離型フィルムの総厚さは、２０μｍ以上１２５μｍ以下であり、好ましくは２０μｍ以上１００μｍ以下であり、より好ましくは２５μｍ以上１００μｍ以下である。
本発明の一実施形態において、半導体封止プロセス用離型フィルムは、表面層（Ａ）及び耐熱樹脂層（Ｂ）からなる２層のフィルムであるが、例えば表面層（Ａ）／耐熱樹脂層（Ｂ）／表面層（Ａ）からなる３層のフィルムであってもよく、表面層（Ａ）と耐熱樹脂層（Ｂ）との間に接着層（Ｃ）があってもよい。
本発明の一実施形態において、半導体封止プロセス用離型フィルムは、１軸または２軸延伸されていてもよく、それによりフィルムの膜強度を高めることもできる。
In one embodiment of the present invention, the storage elastic modulus (E'1) at 180 ° C. of the release film for the semiconductor encapsulation process is 0.5 times or more 1.0 than the storage elastic modulus (E'2) at 23 ° C. It is twice or less, preferably 0.55 times or more and 0.9 times or less, and more preferably 0.6 times or more and 0.8 times or less. The storage elastic modulus (E'1) at 180 ° C. of the release film for the semiconductor sealing process is 0.5 times or more the storage elastic modulus (E'2) at 23 ° C., so that the film can be sealed at a higher temperature. Even in the process, the release film for the semiconductor encapsulation process does not become too soft, and wrinkles can be suppressed in the encapsulation process.
In one embodiment of the present invention, the total thickness of the release film for the semiconductor encapsulation process is 20 μm or more and 125 μm or less, preferably 20 μm or more and 100 μm or less, and more preferably 25 μm or more and 100 μm or less.
In one embodiment of the present invention, the release film for the semiconductor encapsulation process is a two-layer film composed of a surface layer (A) and a heat-resistant resin layer (B). For example, the surface layer (A) / heat-resistant resin layer. It may be a three-layer film composed of (B) / surface layer (A), and an adhesive layer (C) may be provided between the surface layer (A) and the heat-resistant resin layer (B).
In one embodiment of the present invention, the release film for the semiconductor encapsulation process may be uniaxially or biaxially stretched, thereby increasing the film strength of the film.
［第二実施形態］
本発明の第二実施形態に係る半導体封止プロセス用離型フィルムは、表面層（Ａ）と耐熱樹脂層（Ｂ）とを有する半導体封止プロセス用離型フィルムであって、前記表面層（Ａ）が４−メチル−ペンテン−１重合体を含み、前記耐熱樹脂層（Ｂ）の１８０℃の貯蔵弾性率（Ｅ’１）が５００ＭＰａ以上２０００ＭＰａ以下である、半導体封止プロセス用離型フィルムである。
[Second Embodiment]
The release film for a semiconductor encapsulation process according to the second embodiment of the present invention is a release film for a semiconductor encapsulation process having a surface layer (A) and a heat-resistant resin layer (B), and the surface layer ( A release film for a semiconductor encapsulation process in which A) contains a 4-methyl-pentene-1 polymer and the heat-resistant resin layer (B) has a storage elasticity (E'1) at 180 ° C. of 500 MPa or more and 2000 MPa or less. Is.
表面層（Ａ）、耐熱樹脂層（Ｂ）の材料や厚さ、その他の成分、フィルム等については、第１実施形態と同様であるので、記載を省略する。
本実施形態において、耐熱樹脂層（Ｂ）を構成する樹脂の１８０℃における貯蔵弾性率（Ｅ’１）は、５００ＭＰａ以上２０００ＭＰａ以下であり、好ましくは１０００ＭＰａ以上１７００ＭＰａ以下であり、より好ましくは１１００ＭＰａ以上１６００ＭＰａ以下である。１８０℃での貯蔵弾性率Ｅ’を５００ＭＰａ以上とすることで、半導体封止プロセス用離型フィルムが柔らかくなりすぎて、封止工程において皺が発生するのを抑制することができるだけでなく、耐熱樹脂層（Ｂ）が金型と接触する場合においても金型に対して離型性を確保することができる。また、１８０℃での貯蔵弾性率Ｅ’を２０００ＭＰａ以下とすることで、半導体封止プロセス用離型フィルムが硬すぎて金型追従性が低下するのを抑制することができる。
The materials and thicknesses of the surface layer (A) and the heat-resistant resin layer (B), other components, the film, and the like are the same as those in the first embodiment, and thus the description thereof will be omitted.
In the present embodiment, the storage elastic modulus (E'1) of the resin constituting the heat-resistant resin layer (B) at 180 ° C. is 500 MPa or more and 2000 MPa or less, preferably 1000 MPa or more and 1700 MPa or less, and more preferably 1100 MPa or more. It is 1600 MPa or less. By setting the storage elastic modulus E'at 180 ° C. to 500 MPa or more, it is possible not only to prevent the release film for the semiconductor encapsulation process from becoming too soft and wrinkle in the encapsulation process, but also to prevent heat resistance. Even when the resin layer (B) comes into contact with the mold, the mold releasability can be ensured with respect to the mold. Further, by setting the storage elastic modulus E'at 180 ° C. to 2000 MPa or less, it is possible to prevent the mold release film for the semiconductor encapsulation process from being too hard and the mold followability from being lowered.
〔半導体封止プロセス用離型フィルムの製造方法〕
本発明の一実施形態において、半導体封止プロセス用離型フィルムは、任意の方法で製造され得る。例えば、表面層（Ａ）と耐熱樹脂層（Ｂ）を共押出成形して積層することにより、半導体封止プロセス用離型フィルムを製造する方法（共押出し形成法）や、予め表面層（Ａ）となるフィルムと、耐熱樹脂層（Ｂ）となるフィルムとを製造し、これらのフィルムを、接着層を介して積層（ラミネート）することにより、半導体封止プロセス用離型フィルムを製造する方法（接着法）等がある。
共押出し形成法における溶融押出手段は、特に限定されないが、例えばＴ型ダイやインフレーション型ダイを有する押出機などを用いることができる。接着法において、接着層を塗布する手段は、特に限定されないが、例えばロールコータ、ダイコータ、スプレーコータ等の各種コータを用いることができる。
[Manufacturing method of release film for semiconductor encapsulation process]
In one embodiment of the invention, the release film for the semiconductor encapsulation process can be produced by any method. For example, a method of producing a release film for a semiconductor encapsulation process (coextrusion forming method) by coextruding and laminating a surface layer (A) and a heat-resistant resin layer (B), or a surface layer (A) in advance. ) And a film to be the heat-resistant resin layer (B), and these films are laminated via an adhesive layer to produce a release film for a semiconductor encapsulation process. (Adhesion method) etc.
The melt extrusion means in the coextrusion forming method is not particularly limited, and for example, an extruder having a T-type die or an inflation-type die can be used. In the bonding method, the means for applying the adhesive layer is not particularly limited, but various coaters such as a roll coater, a die coater, and a spray coater can be used.
〔電子部品の製造方法〕
本実施形態において、半導体封止プロセス用離型フィルムを用いた電子部品は、半導体封止プロセス用離型フィルムを封止装置に取り付ける取付工程と、前記半導体封止プロセス用離型フィルムと基板上に配列された半導体を樹脂で封止する封止工程と、前記半導体封止プロセス用離型フィルムを剥がす離型工程と、を有する方法で製造される。
本発明の一実施形態においては、電子部品は以下の方法で製造される。まず、半導体封止プロセス用離型フィルムを、金型内に供給する。次いで、半導体封止プロセス用離型フィルムを上型の内面に配置する。次いで、金型内に、樹脂封止すべき半導体を配置すると共に、封止樹脂材料をセットし、型締めする。次いで、所定の加熱および加圧条件下、金型内に封止樹脂材料を注入する。このときの金型の温度は、一般的に１５０〜１８０℃であるが、本実施形態の半導体封止プロセス用離型フィルムを用いる場合は、より高い金型温度（例えば１８０〜２００℃）であっても、一定以上の離型性、金型追従性を有し、皺の発生が少ないことから、封止樹脂材料の選択肢が広がるだけでなく、封止プロセスの時間を短縮することもできる。成形圧力は、例えば７〜１２ＭＰａであり、成形時間は、例えば１〜５分程度である。一定時間保持した後、上型と下型を開き、樹脂封止された半導体や離型フィルムを同時にまたは順次離型する。得られた半導体の余分な樹脂部分を除去することで、所望の電子部品を得ることができる。
本発明の離型フィルムは、半導体素子を樹脂封止する工程に限らず、金型を用いて各種樹脂を成形および離型する工程に好ましく使用できる。
[Manufacturing method of electronic parts]
In the present embodiment, the electronic component using the release film for the semiconductor encapsulation process is provided in the mounting step of attaching the release film for the semiconductor encapsulation process to the encapsulation device, and on the release film for the semiconductor encapsulation process and the substrate. It is manufactured by a method having a sealing step of sealing the semiconductors arranged in the above with a resin and a release step of peeling off the release film for the semiconductor sealing process.
In one embodiment of the present invention, electronic components are manufactured by the following methods. First, the release film for the semiconductor encapsulation process is supplied into the mold. Next, the release film for the semiconductor encapsulation process is placed on the inner surface of the upper mold. Next, the semiconductor to be resin-sealed is placed in the mold, the sealing resin material is set, and the mold is fastened. Then, the sealing resin material is injected into the mold under predetermined heating and pressurizing conditions. The temperature of the mold at this time is generally 150 to 180 ° C., but when the release film for the semiconductor encapsulation process of the present embodiment is used, the temperature of the mold is higher (for example, 180 to 200 ° C.). Even if there is, it has a certain level of releasability and mold followability, and wrinkles are less likely to occur. Therefore, not only the choice of sealing resin material can be expanded, but also the time of the sealing process can be shortened. .. The molding pressure is, for example, 7 to 12 MPa, and the molding time is, for example, about 1 to 5 minutes. After holding for a certain period of time, the upper mold and the lower mold are opened, and the resin-sealed semiconductor or release film is released simultaneously or sequentially. By removing the excess resin portion of the obtained semiconductor, a desired electronic component can be obtained.
The release film of the present invention can be preferably used not only in the step of sealing the semiconductor element with a resin but also in the step of molding and releasing various resins using a mold.
以下に実施例を示して本発明を更に具体的に説明するが、これらの実施例により本発明の解釈が限定されるものではない。 Hereinafter, the present invention will be described in more detail with reference to Examples, but the interpretation of the present invention is not limited by these Examples.
［材料］
実施例及び比較例では、以下の材料を用いた。
（表面層（Ａ））
（Ａ−１）ポリメチルペンテン樹脂フィルム、三井化学社製「ＤＸ８４５」
（Ａ−２）ポリメチルペンテン樹脂フィルム、三井化学社製「ＭＸ００４」
（Ａ−３）ポリエチレン樹脂フィルム、東ソー社製「ニポロンハード６０６０」
（耐熱樹脂層（Ｂ））
（Ｂ−１）ポリエーテルスルフォン樹脂フィルム、住友化学社製「スミカエクセルＰＥＳ４８００Ｇ」
（Ｂ−２）ポリフェニルスルフォン樹脂フィルム、ＢＡＳＦ社製「ＵｌｔｒａｓｏｎＰ３０１０」
（Ｂ−３）ポリアリレート樹脂フィルム、ユニチカ社製「Ｕポリマー Ｕ−１００」、Ｔｇ１９３℃
（Ｂ−４）ポリエーテルイミド樹脂フィルム、Ｓａｂｉｃ社製「ＵｌｔｅｍＶＨ１００３−１０００」
（Ｂ−５）ポリカーボネート樹脂フィルム、帝人社製「Ｋ１３００」
（Ｂ−６）ポリエチレンテレフタレート樹脂フィルム、東レ社製「Ｓ１０」
（接着層（Ｃ））
（Ｃ−１）エポキシ系熱硬化性接着剤、三菱ガス化学社製「マクシーブ Ｍ−１００」と「マクシーブ Ｃ９３−Ｅ」の１：１混合液
[material]
In the examples and comparative examples, the following materials were used.
(Surface layer (A))
(A-1) Polymethylpentene resin film, "DX845" manufactured by Mitsui Chemicals, Inc.
(A-2) Polymethylpentene resin film, "MX004" manufactured by Mitsui Chemicals, Inc.
(A-3) Polyethylene resin film, "Nipolon Hard 6060" manufactured by Tosoh Corporation
(Heat-resistant resin layer (B))
(B-1) Polyester sulfone resin film, "Sumika Excel PES4800G" manufactured by Sumitomo Chemical Co., Ltd.
(B-2) Polyphenyl sulfone resin film, BASF's "Ultrason P3010"
(B-3) Polyarylate resin film, "U Polymer U-100" manufactured by Unitika Ltd., Tg 193 ° C.
(B-4) Polyetherimide resin film, "UltemVH1003-1000" manufactured by Sabic Co., Ltd.
(B-5) Polycarbonate resin film, "K1300" manufactured by Teijin Limited
(B-6) Polyethylene terephthalate resin film, "S10" manufactured by Toray Industries, Inc.
(Adhesive layer (C))
(C-1) Epoxy-based thermosetting adhesive, 1: 1 mixture of "Maxive M-100" and "Maxive C93-E" manufactured by Mitsubishi Gas Chemical Company, Inc.
耐熱樹脂層（Ｂ）および半導体封止プロセス用離型フィルムの貯蔵弾性率（引張粘弾性）は、以下の条件で測定した。
装置：動的粘弾性装置ＲＳＡ−Ｇ２（ＴＡ Instruments社製）
測定条件：引張モード、
振動周波数：１Ｈｚ、
測定温度：２３℃から５℃／分の速度で昇温し、サンプルが融解して測定不能になるまでの温度
測定方向：フィルムの長手方向（フィルム搬送方向）
評価項目：１８０℃における貯蔵弾性率Ｅ’１
２３℃における貯蔵弾性率Ｅ’２
The storage elastic modulus (tensile viscoelasticity) of the heat-resistant resin layer (B) and the release film for the semiconductor encapsulation process was measured under the following conditions.
Device: Dynamic viscoelastic device RSA-G2 (manufactured by TA Instruments)
Measurement conditions: tensile mode,
Vibration frequency: 1Hz,
Measurement temperature: Temperature from 23 ° C to 5 ° C / min until the sample melts and becomes unmeasurable Measurement direction: Longitudinal direction of the film (film transport direction)
Evaluation item: Storage elastic modulus E'1 at 180 ° C
Storage elastic modulus E'2 at 23 ° C
［実施例１］
表面層（Ａ）として、三井化学社製ポリメチルペンテン樹脂（ＤＸ８４５）を３００℃で溶融押出し、膜厚２３μｍのポリメチルペンテンフィルムを得た。耐熱樹脂層（Ｂ）として、住友化学社製ポリエーテルスルフォン（スミカエクセルＰＥＳ４８００Ｇ）を３７０℃で溶融押出し、膜厚２３μｍのポリエーテルスルフォンフィルムを得た。このポリエーテルスルフォンフィルムの片面に、三菱ガス化学社製エポキシ系熱硬化性接着剤（マクシーブ）を乾燥後の塗膜厚さが４μｍとなるように塗布し、接着層を形成した。この接着層にポリメチルペンテンフィルムを、ドライラミネート装置で積層し、厚さ５０μｍの半導体封止プロセス用離型フィルムを得た。
[Example 1]
As the surface layer (A), a polymethylpentene resin (DX845) manufactured by Mitsui Chemicals, Inc. was melt-extruded at 300 ° C. to obtain a polymethylpentene film having a film thickness of 23 μm. As the heat-resistant resin layer (B), a polyether sulphon (Sumika Excel PES4800G) manufactured by Sumitomo Chemical Co., Ltd. was melt-extruded at 370 ° C. to obtain a polyether sulphon film having a thickness of 23 μm. An epoxy-based thermosetting adhesive (Maxive) manufactured by Mitsubishi Gas Chemical Company, Inc. was applied to one side of this polyether sulfone film so that the coating thickness after drying was 4 μm to form an adhesive layer. A polymethylpentene film was laminated on this adhesive layer with a dry laminating apparatus to obtain a release film having a thickness of 50 μm for a semiconductor encapsulation process.
［実施例２〜１７、比較例１〜４］
表面層（Ａ）、耐熱樹脂層（Ｂ）、接着層（Ｃ）を表１に記載の通りにした以外は、実施例１と同じ方法で半導体封止プロセス用離型フィルムを作製した。なお、実施例１０については、共押出し法で作成して、２層構造でかつ厚さが５０μｍの半導体封止プロセス用離型フィルムとした。比較例３、４は各々単層構造でかつ厚さが５０μｍの半導体封止プロセス用離型フィルムとした。
[Examples 2 to 17, Comparative Examples 1 to 4]
A release film for a semiconductor encapsulation process was produced by the same method as in Example 1 except that the surface layer (A), the heat-resistant resin layer (B), and the adhesive layer (C) were as shown in Table 1. In Example 10, a release film for a semiconductor encapsulation process having a two-layer structure and a thickness of 50 μm was prepared by a coextrusion method. Comparative Examples 3 and 4 were each a single-layer structure and a release film for a semiconductor encapsulation process having a thickness of 50 μm.
得られた半導体封止プロセス用離型フィルムを、アピックヤマダ社製トランスファーモールド装置ＧＴＭ−Ｓ ＭＳを用いて、上型のパーティング面に真空吸着させた。次いで、粘着テープを貼り付けた半導体チップが搭載されたリードフレームを下型に配置し、型締めした。このとき、金型の温度（成形温度）を１８０℃、成形圧力を８ＭＰａ、成形時間を３分とした。そして、半導体チップが搭載されたリードフレームを封止樹脂で封止した後、樹脂封止に接触している半導体封止プロセス用離型フィルムを離型した。 The obtained release film for the semiconductor encapsulation process was vacuum-adsorbed to the parting surface of the upper mold using a transfer molding apparatus GTM-SMS manufactured by APIC Yamada Corporation. Next, the lead frame on which the semiconductor chip to which the adhesive tape was attached was placed in the lower mold and molded. At this time, the mold temperature (molding temperature) was 180 ° C., the molding pressure was 8 MPa, and the molding time was 3 minutes. Then, after sealing the lead frame on which the semiconductor chip was mounted with the sealing resin, the release film for the semiconductor sealing process in contact with the resin sealing was released.
実施例及び比較例で得られた半導体封止プロセス用離型フィルムについて、以下の評価を行い、結果を表１に示した。 The release films for the semiconductor encapsulation process obtained in Examples and Comparative Examples were evaluated as follows, and the results are shown in Table 1.
［評価］
（金型追従性）
半導体封止プロセス用離型フィルムの金型追従性を、以下の基準で評価した。
３：半導体パッケージに、樹脂欠けが全くない
２：半導体パッケージに、樹脂欠けが端部に一部あった
１：半導体封止プロセス用離型フィルムが金型に追従せず、真空吸着できなかった
[evaluation]
(Mold followability)
The mold followability of the release film for the semiconductor encapsulation process was evaluated according to the following criteria.
3: There is no resin chipping in the semiconductor package 2: There is some resin chipping in the semiconductor package at the end 1: The release film for the semiconductor encapsulation process does not follow the mold and cannot be vacuum-adsorbed.
（皺・破れ）
半導体封止プロセス用離型フィルム、および半導体パッケージの樹脂封止面の皺の状態を、以下の基準で評価した。
３：半導体封止プロセス用離型フィルムに皺、破れが全くない
２：半導体封止プロセス用離型フィルムにはわずかに皺があるが、破れは生じなかった
１：半導体封止プロセス用離型フィルムに多数の皺があるか、破れが生じた
(Wrinkles / tears)
The state of wrinkles on the release film for the semiconductor encapsulation process and the resin encapsulation surface of the semiconductor package was evaluated according to the following criteria.
3: No wrinkles or tears on the release film for the semiconductor encapsulation process 2: The release film for the semiconductor encapsulation process has slight wrinkles but no tears 1: Demolding for the semiconductor encapsulation process The film has many wrinkles or tears
（離型性）
半導体封止プロセス用離型フィルムの離型性を、以下の基準で評価した。
３：半導体封止プロセス用離型フィルムが、金型の開放と同時に剥がれる
２：半導体封止プロセス用離型フィルムが、金型の開放から１０秒以内に剥がれる
１：半導体封止プロセス用離型フィルムが、半導体パッケージの樹脂封止面に密着しており、剥がれない
(Releasability)
The releasability of the release film for the semiconductor encapsulation process was evaluated according to the following criteria.
3: The release film for the semiconductor encapsulation process peels off at the same time as the mold is opened 2: The release film for the semiconductor encapsulation process peels off within 10 seconds after the mold is opened 1: The release film for the semiconductor encapsulation process peels off The film is in close contact with the resin sealing surface of the semiconductor package and does not come off.
Claims (8)
前記表面層（Ａ）が４−メチル−ペンテン−１重合体を含み、
前記半導体封止プロセス用離型フィルムの１８０℃の貯蔵弾性率（Ｅ’１）が２５０ＭＰａ以上１５００ＭＰａ以下である、半導体封止プロセス用離型フィルム。 A release film for a semiconductor encapsulation process having a surface layer (A) and a heat-resistant resin layer (B).
The surface layer (A) contains a 4-methyl-pentene-1 polymer and contains
A release film for a semiconductor encapsulation process, wherein the storage elastic modulus (E'1) at 180 ° C. of the release film for a semiconductor encapsulation process is 250 MPa or more and 1500 MPa or less.
前記表面層（Ａ）が４−メチル−ペンテン−１重合体を含み、
前記耐熱樹脂層（Ｂ）の１８０℃の貯蔵弾性率（Ｅ’１）が５００ＭＰａ以上２０００ＭＰａ以下である、半導体封止プロセス用離型フィルム。 A release film for a semiconductor encapsulation process having a surface layer (A) and a heat-resistant resin layer (B).
The surface layer (A) contains a 4-methyl-pentene-1 polymer and contains
A release film for a semiconductor encapsulation process in which the storage elastic modulus (E'1) of the heat-resistant resin layer (B) at 180 ° C. is 500 MPa or more and 2000 MPa or less.
１８０℃の強度（Ｆ）＝１８０℃の貯蔵弾性率（Ｅ’１）×厚み（ｍｍ）・・・式１ The semiconductor seal according to any one of claims 1 to 3, wherein the release film for the semiconductor encapsulation process calculated from the following formula 1 has a strength (F) of 180 ° C. of 5000 N / mm or more and 130000 N / mm or less. Release film for stopping process.
Strength (F) at 180 ° C = Storage elastic modulus at 180 ° C (E'1) x thickness (mm) ... Equation 1
前記半導体封止プロセス用離型フィルムと基板上に配列された半導体を樹脂で封止する封止工程と、
前記半導体封止プロセス用離型フィルムを剥がす離型工程と、を有する電子部品の製造方法。 The mounting step of attaching the release film for the semiconductor sealing process according to any one of claims 1 to 7 to the sealing device, and
A sealing step of sealing the release film for the semiconductor sealing process and the semiconductors arranged on the substrate with a resin,
A method for manufacturing an electronic component, comprising a mold release step of peeling a mold release film for a semiconductor encapsulation process.
Priority Applications (3)
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| JP2018097837A JP2021130197A (en) | 2018-05-22 | 2018-05-22 | Release film for semiconductor encapsulation process and manufacturing method of electronic parts using the same |
| PCT/JP2019/019825 WO2019225525A1 (en) | 2018-05-22 | 2019-05-20 | Release film for semiconductor sealing process and method for manufacturing electronic component using same |
| TW108117450A TW202012140A (en) | 2018-05-22 | 2019-05-21 | Release film for semiconductor sealing process and method for manufacturing electronic component using same |
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| JP2018097837A JP2021130197A (en) | 2018-05-22 | 2018-05-22 | Release film for semiconductor encapsulation process and manufacturing method of electronic parts using the same |
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| JPH07120683B2 (en) * | 1988-10-12 | 1995-12-20 | セイコーエプソン株式会社 | Method for manufacturing semiconductor device |
| JP2002158242A (en) * | 1999-11-30 | 2002-05-31 | Hitachi Chem Co Ltd | Mold release sheet for semiconductor mold and method for manufacturing resin-sealed semiconductor device |
| JP5297233B2 (en) * | 2009-03-09 | 2013-09-25 | 三井化学株式会社 | Release film for semiconductor encapsulation process and method for producing resin-encapsulated semiconductor using the same |
| JP5144634B2 (en) * | 2009-12-22 | 2013-02-13 | 日東電工株式会社 | Heat-resistant adhesive sheet for substrate-less semiconductor package manufacturing, and substrate-less semiconductor package manufacturing method using the adhesive sheet |
| WO2015133634A1 (en) * | 2014-03-07 | 2015-09-11 | 旭硝子株式会社 | Mould-release film, and sealed-body production method |
| SG11201607466TA (en) * | 2014-03-07 | 2016-10-28 | Asahi Glass Co Ltd | Mold release film, process for its production and process for producing semiconductor package |
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