JP2021125308A - セラミックヒータ - Google Patents
セラミックヒータ Download PDFInfo
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- JP2021125308A JP2021125308A JP2020016112A JP2020016112A JP2021125308A JP 2021125308 A JP2021125308 A JP 2021125308A JP 2020016112 A JP2020016112 A JP 2020016112A JP 2020016112 A JP2020016112 A JP 2020016112A JP 2021125308 A JP2021125308 A JP 2021125308A
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- ceramic plate
- thermocouple
- ceramic
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- 239000000919 ceramic Substances 0.000 title claims abstract description 140
- 230000002093 peripheral effect Effects 0.000 claims abstract description 87
- 238000010438 heat treatment Methods 0.000 claims abstract description 26
- 238000005192 partition Methods 0.000 claims description 18
- 238000009529 body temperature measurement Methods 0.000 abstract description 20
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
- G01K1/146—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations arrangements for moving thermometers to or from a measuring position
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
- H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/005—Heaters using a particular layout for the resistive material or resistive elements using multiple resistive elements or resistive zones isolated from each other
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Resistance Heating (AREA)
- Surface Heating Bodies (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【解決手段】セラミックヒータ10は、表面にウエハ載置面20aを有するセラミックプレート20と、セラミックプレート20に埋設された抵抗発熱体22,24と、セラミックプレート20をセラミックプレート20の裏面20bから支持する筒状シャフト40と、セラミックプレート20の裏面20bのうち筒状シャフト40に囲まれたシャフト内領域20dの起点26sからセラミックプレート20の外周部の終端位置26eに至る熱電対通路26と、を備える。熱電対通路26は、起点26sから終端位置26eまでの間の中間位置26mに設けられた段差部26bと、起点26sから終端位置26eに至る長距離部と、起点26sから中間位置26mに至る短距離部とを有する。
【選択図】図3
Description
表面にウエハ載置面を有するセラミックプレートと、
前記セラミックプレートに埋設された抵抗発熱体と、
前記セラミックプレートを前記セラミックプレートの裏面から支持する筒状シャフトと、
前記セラミックプレートの前記裏面のうち前記筒状シャフトに囲まれたシャフト内領域の起点から前記セラミックプレートの外周部の終端位置に至る熱電対通路と、
を備え、
前記熱電対通路は、前記起点から前記終端位置までの間の中間位置に設けられた段差部と、前記起点から前記終端位置に至る長距離部と、前記起点から前記中間位置に至る短距離部とを有する、
ものである。
表面にウエハ載置面を有するセラミックプレートと、
前記セラミックプレートに埋設された抵抗発熱体と、
前記セラミックプレートを前記セラミックプレートの裏面から支持する筒状シャフトと、
前記セラミックプレートの前記裏面のうち前記筒状シャフトに囲まれたシャフト内領域の起点から前記セラミックプレートの外周部に向かって延びる熱電対通路と、
を備え、
前記熱電対通路は、途中に分岐点を有し、前記分岐点から第1終端位置に至る第1分岐路と、前記分岐点から前記第1終端位置とは異なる第2の終端位置に至る第2分岐路とを有する、
ものである。
Claims (11)
- 表面にウエハ載置面を有するセラミックプレートと、
前記セラミックプレートに埋設された抵抗発熱体と、
前記セラミックプレートを前記セラミックプレートの裏面から支持する筒状シャフトと、
前記セラミックプレートの前記裏面のうち前記筒状シャフトに囲まれたシャフト内領域の起点から前記セラミックプレートの外周部の終端位置に至る熱電対通路と、
を備え、
前記熱電対通路は、前記起点から前記終端位置までの間の中間位置に設けられた段差部と、前記起点から前記終端位置に至る長距離部と、前記起点から前記中間位置に至る短距離部とを有する、
セラミックヒータ。 - 前記段差部は、前記セラミックプレートの面方向に段が生じるように設けられている、
請求項1に記載のセラミックヒータ。 - 前記段差部は、前記セラミックプレートの厚さ方向に段が生じるように設けられている、
請求項1に記載のセラミックヒータ。 - 前記熱電対通路は、前記長距離部と前記短距離部との境界の少なくとも一部に仕切り壁を有する、
請求項1〜3のいずれか1項に記載のセラミックヒータ。 - 前記熱電対通路は、前記セラミックプレートを平面視したときに湾曲している、
請求項1〜4のいずれか1項に記載のセラミックヒータ。 - 前記抵抗発熱体は、前記ウエハ載置面を複数に分割した各ゾーンごとに配線され、
前記終端位置と前記中間位置とは、互いに異なるゾーンに設けられている、
請求項1〜5のいずれか1項に記載のセラミックヒータ。 - 表面にウエハ載置面を有するセラミックプレートと、
前記セラミックプレートに埋設された抵抗発熱体と、
前記セラミックプレートを前記セラミックプレートの裏面から支持する筒状シャフトと、
前記セラミックプレートの前記裏面のうち前記筒状シャフトに囲まれたシャフト内領域の起点から前記セラミックプレートの外周部に向かって延びる熱電対通路と、
を備え、
前記熱電対通路は、途中に分岐点を有し、前記分岐点から第1終端位置に至る第1分岐路と、前記分岐点から前記第1終端位置とは異なる第2の終端位置に至る第2分岐路とを有する、
セラミックヒータ。 - 前記セラミックプレートの中心から前記第2終端位置までの長さは、前記セラミックプレートの中心から前記第1終端位置までの長さと同じか又は異なる、
請求項7に記載のセラミックヒータ。 - 前記熱電対通路は、前記起点から前記分岐点までの間の少なくとも一部に仕切り壁を有する、
請求項7又は8に記載のセラミックヒータ。 - 前記熱電対通路は、前記セラミックプレートを平面視したときに、前記第1分岐路及び前記第2分岐路の少なくとも一方が湾曲している、
請求項7〜9のいずれか1項に記載のセラミックヒータ。 - 前記抵抗発熱体は、前記ウエハ載置面を複数に分割した各ゾーンごとに配線され、
前記第1終端位置と前記第2終端位置とは、互いに異なるゾーンに設けられている、
請求項7〜10のいずれか1項に記載のセラミックヒータ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020016112A JP7210492B2 (ja) | 2020-02-03 | 2020-02-03 | セラミックヒータ |
US17/115,970 US11874180B2 (en) | 2020-02-03 | 2020-12-09 | Ceramic heater |
TW109146174A TWI780551B (zh) | 2020-02-03 | 2020-12-25 | 陶瓷加熱器 |
KR1020210011320A KR102537778B1 (ko) | 2020-02-03 | 2021-01-27 | 세라믹 히터 |
CN202110146229.6A CN113207201B (zh) | 2020-02-03 | 2021-02-02 | 陶瓷加热器 |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020016112A JP7210492B2 (ja) | 2020-02-03 | 2020-02-03 | セラミックヒータ |
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JP2021125308A true JP2021125308A (ja) | 2021-08-30 |
JP7210492B2 JP7210492B2 (ja) | 2023-01-23 |
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JP2020016112A Active JP7210492B2 (ja) | 2020-02-03 | 2020-02-03 | セラミックヒータ |
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US (1) | US11874180B2 (ja) |
JP (1) | JP7210492B2 (ja) |
KR (1) | KR102537778B1 (ja) |
TW (1) | TWI780551B (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012039453A1 (ja) * | 2010-09-24 | 2012-03-29 | 日本碍子株式会社 | 半導体製造装置部材 |
JP2012160368A (ja) * | 2011-02-01 | 2012-08-23 | Nihon Ceratec Co Ltd | セラミックスヒータ及びその製造方法 |
JP2018074009A (ja) * | 2016-10-31 | 2018-05-10 | 日本特殊陶業株式会社 | 保持装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009074978A (ja) | 2007-09-21 | 2009-04-09 | Fenwall Controls Of Japan Ltd | 温度センサ及び温度センサの製造方法 |
JP5791412B2 (ja) | 2010-07-26 | 2015-10-07 | 日本碍子株式会社 | セラミックヒーター |
JP2012080103A (ja) * | 2010-10-01 | 2012-04-19 | Ngk Insulators Ltd | サセプター及びその製法 |
WO2013162000A1 (ja) * | 2012-04-27 | 2013-10-31 | 日本発條株式会社 | 基板支持装置及び基板支持装置に熱電対を配設する方法 |
US9984866B2 (en) | 2012-06-12 | 2018-05-29 | Component Re-Engineering Company, Inc. | Multiple zone heater |
US10973088B2 (en) | 2016-04-18 | 2021-04-06 | Applied Materials, Inc. | Optically heated substrate support assembly with removable optical fibers |
KR102015643B1 (ko) * | 2017-10-24 | 2019-08-28 | (주)티티에스 | 열전대 삽입 홈을 구비한 히터 |
-
2020
- 2020-02-03 JP JP2020016112A patent/JP7210492B2/ja active Active
- 2020-12-09 US US17/115,970 patent/US11874180B2/en active Active
- 2020-12-25 TW TW109146174A patent/TWI780551B/zh active
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2021
- 2021-01-27 KR KR1020210011320A patent/KR102537778B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012039453A1 (ja) * | 2010-09-24 | 2012-03-29 | 日本碍子株式会社 | 半導体製造装置部材 |
JP2012160368A (ja) * | 2011-02-01 | 2012-08-23 | Nihon Ceratec Co Ltd | セラミックスヒータ及びその製造方法 |
JP2018074009A (ja) * | 2016-10-31 | 2018-05-10 | 日本特殊陶業株式会社 | 保持装置 |
Also Published As
Publication number | Publication date |
---|---|
KR102537778B1 (ko) | 2023-05-31 |
JP7210492B2 (ja) | 2023-01-23 |
CN113207201A (zh) | 2021-08-03 |
TW202133680A (zh) | 2021-09-01 |
US11874180B2 (en) | 2024-01-16 |
KR20210098858A (ko) | 2021-08-11 |
TWI780551B (zh) | 2022-10-11 |
US20210239541A1 (en) | 2021-08-05 |
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