JP2021097130A - Inductor built-in substrate and manufacturing method thereof - Google Patents

Inductor built-in substrate and manufacturing method thereof Download PDF

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JP2021097130A
JP2021097130A JP2019227176A JP2019227176A JP2021097130A JP 2021097130 A JP2021097130 A JP 2021097130A JP 2019227176 A JP2019227176 A JP 2019227176A JP 2019227176 A JP2019227176 A JP 2019227176A JP 2021097130 A JP2021097130 A JP 2021097130A
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hole
substrate
holes
inductor
built
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勉 山内
Tsutomu Yamauchi
勉 山内
壮馬 奥田
Soma Okuda
壮馬 奥田
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Ibiden Co Ltd
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Ibiden Co Ltd
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Abstract

To provide an inductor built-in board that has large inductance and is highly reliable.SOLUTION: In an inductor built-in substrate 10, a second through hole conductor 36B connecting a first conductor layer 58F and a second conductor layer 58S is directly formed in a second through hole 18b formed in a magnetic resin 18. The position where a protrusion 18d is formed in the second through hole 18b is a position closer to a second surface S of an insulating base material 20.SELECTED DRAWING: Figure 1

Description

本発明は、インダクタを内蔵するインダクタ内蔵基板、インダクタ内蔵基板の製造方法に関する。 The present invention relates to a board with a built-in inductor and a method for manufacturing a board with a built-in inductor.

特許文献1は、配線基板に内蔵されるインダクタ部品の製造方法を開示している。特許文献1では、樹脂層内に磁性体を収容し、樹脂層内にスルーホール導体を設け、スルーホール導体と磁性体とが接触しないようにしている。 Patent Document 1 discloses a method for manufacturing an inductor component incorporated in a wiring board. In Patent Document 1, a magnetic material is housed in the resin layer, and a through-hole conductor is provided in the resin layer to prevent the through-hole conductor and the magnetic material from coming into contact with each other.

特開2016−197624JP 2016-197624

特許文献1では、樹脂層にスルーホール導体を配置するため、インダクタ部品の大きさに対して磁性体の割合が低くなり、インダクタンスを大きくすることが難しいと考えられる。 In Patent Document 1, since the through-hole conductor is arranged in the resin layer, the ratio of the magnetic material to the size of the inductor component is low, and it is considered difficult to increase the inductance.

本発明の目的は、小型でインダクタンスが大きく、信頼性の高いインダクタ内蔵基板、インダクタ内蔵基板の製造方法を提供することである。 An object of the present invention is to provide a substrate having a built-in inductor and a method for manufacturing a substrate having a built-in inductor, which are small in size, have a large inductance, and are highly reliable.

本発明に係るインダクタ内蔵基板は、複数の開口と第1貫通孔が形成され、第1面と第1面の反対側の第2面とを有するコア基板と、前記複数の開口内に充填され、複数の第2貫通孔を有する磁性体樹脂と、を有するインダクタ内蔵基板であって、前記第1貫通孔に形成された金属膜から成る第1スルーホール導体と、前記複数の第2貫通孔に形成された金属膜から成る複数の第2スルーホール導体と、を有する。そして、前記複数の第2貫通孔の内壁には、それぞれ磁性体樹脂の残渣が付着してなる突部が形成されており、前記複数の第2貫通孔における突部の形成位置は、前記コア基板の第1面又は第2面のいずれか一方に寄った位置である。 The inductor-embedded substrate according to the present invention has a plurality of openings and first through holes formed therein, and is filled in the core substrate having the first surface and the second surface on the opposite side of the first surface, and the plurality of openings. A substrate with a built-in inductor having a magnetic resin having a plurality of second through holes, a first through-hole conductor made of a metal film formed in the first through holes, and the plurality of second through holes. It has a plurality of second through-hole conductors made of a metal film formed on the surface of the conductor. A protrusion formed by adhering a residue of the magnetic resin is formed on the inner wall of the plurality of second through holes, and the position of the protrusion in the plurality of second through holes is the core. It is a position closer to either the first surface or the second surface of the substrate.

本発明に係るインダクタ内蔵基板の製造方法は、第1面と第1面の反対側の第2面とを有する絶縁性基材に複数の開口を形成することと、前記複数の開口内に磁性体粒子を含む磁性体樹脂を充填することと、前記絶縁性基材に第1貫通孔を形成することと、前記磁性体樹脂に複数の第2貫通孔を形成することと、前記第1貫通孔内及び前記複数の第2貫通孔内に金属膜から成るスルーホール導体を形成することと、を有する。そして、前記第1貫通孔の形成後、デスミア処理を行い、前記複数の第2貫通孔の形成の際に、複数の第2貫通孔における突部の形成位置が前記絶縁性基材の第1面又は第2面のいずれか一方に寄った位置となるように、複数の第2貫通孔の内壁にそれぞれ磁性体樹脂の残渣が付着してなる突部を形成する。 The method for manufacturing an inductor-embedded substrate according to the present invention is to form a plurality of openings in an insulating base material having a first surface and a second surface opposite to the first surface, and magnetism in the plurality of openings. Filling with a magnetic resin containing body particles, forming a first through hole in the insulating base material, forming a plurality of second through holes in the magnetic resin, and forming the first through hole. It includes forming a through-hole conductor made of a metal film in the holes and in the plurality of second through holes. Then, after the formation of the first through hole, a desmear treatment is performed, and when the plurality of second through holes are formed, the position where the protrusion is formed in the plurality of second through holes is the first of the insulating base material. Protrusions formed by adhering magnetic resin residues to the inner walls of the plurality of second through holes are formed so as to be closer to either the surface or the second surface.

本発明のインダクタ内蔵基板、インダクタ内蔵基板の製造方法は、磁性体樹脂の第2貫通孔に直接金属膜からなる第2スルーホール導体(スルーホール導体)を形成するため、インダクタ部品の磁性体樹脂の体積を大きくし、インダクタンスを大きくすることができる。第2貫通孔の内壁に形成される磁性体樹脂の残渣からなる突部が、コア基板の第1面又は第2面のいずれか一方に寄った位置である。突部が一方に形成されるため、突部がランダムに形成されるのと比較し、コア基板の応力バランスが取れ、インダクタ内蔵基板の信頼性が高まる。 In the method for manufacturing an inductor-embedded substrate and an inductor-embedded substrate of the present invention, a second through-hole conductor (through-hole conductor) made of a metal film is formed directly in the second through hole of the magnetic resin, so that the magnetic resin of the inductor component. The volume of the can be increased and the inductance can be increased. The protrusion made of the residue of the magnetic resin formed on the inner wall of the second through hole is located near either the first surface or the second surface of the core substrate. Since the protrusions are formed on one side, the stress balance of the core substrate is balanced and the reliability of the inductor-embedded substrate is improved as compared with the case where the protrusions are formed randomly.

図1(A)は実施形態のインダクタ内蔵基板の断面図であり、図1(B)はインダクタ内蔵基板のコア基板の拡大図である。FIG. 1A is a cross-sectional view of the inductor built-in substrate of the embodiment, and FIG. 1B is an enlarged view of a core substrate of the inductor built-in substrate. 実施形態に係るインダクタ内蔵基板の製造方法を示す工程図。The process chart which shows the manufacturing method of the inductor built-in substrate which concerns on embodiment. 実施形態に係るインダクタ内蔵基板の製造方法を示す工程図。The process chart which shows the manufacturing method of the inductor built-in substrate which concerns on embodiment. 実施形態に係るインダクタ内蔵基板の製造方法を示す工程図。The process chart which shows the manufacturing method of the inductor built-in substrate which concerns on embodiment.

図1(A)は、実施形態のインダクタを内蔵するインダクタ内蔵基板10の断面図を示す。インダクタ内蔵基板10は、第1面Fと第1面Fと反対側の第2面Sを有する絶縁性基材20と、絶縁性基材20の第1面F上の第1導体層(導体回路)58Fと、絶縁性基材20の第2面S上の第2導体層58Sと、第1導体層58Fと第2導体層58Sを接続しているスルーホール導体36とで形成されているコア基板30を有する。コア基板30は第1面Fと第1面Fと反対側の第2面Sを有する。コア基板30の第1面Fと絶縁性基材20の第1面Fは同じ面であり、コア基板30の第2面Sと絶縁性基材20の第2面Sは同じ面である。絶縁性基材20は、エポキシなどの樹脂と補強用のガラスクロス等の芯材14で形成されている。絶縁性基材20は、さらに、シリカ等の無機粒子を有しても良い。 FIG. 1A shows a cross-sectional view of an inductor built-in substrate 10 having an inductor of the embodiment built-in. The inductor-embedded substrate 10 includes an insulating base material 20 having a first surface F and a second surface S opposite to the first surface F, and a first conductor layer (conductor) on the first surface F of the insulating base material 20. Circuit) 58F, a second conductor layer 58S on the second surface S of the insulating base material 20, and a through-hole conductor 36 connecting the first conductor layer 58F and the second conductor layer 58S. It has a core substrate 30. The core substrate 30 has a first surface F and a second surface S opposite to the first surface F. The first surface F of the core substrate 30 and the first surface F of the insulating base material 20 are the same surface, and the second surface S of the core substrate 30 and the second surface S of the insulating base material 20 are the same surface. The insulating base material 20 is formed of a resin such as epoxy and a core material 14 such as glass cloth for reinforcement. The insulating base material 20 may further have inorganic particles such as silica.

インダクタ内蔵基板10は、さらに、コア基板30の第1面F上に上側のビルドアップ層450Fを有する。上側のビルドアップ層450Fはコア基板30の第1面F上に形成されている絶縁層450Aと絶縁層450A上の導体層458Aと絶縁層450Aを貫通し第1導体層58Fと導体層458Aを接続しているビア導体460Aとを有する。上側のビルドアップ層450Fはさらに絶縁層450Aと導体層458A上の絶縁層450Cと絶縁層450C上の導体層458Cと絶縁層450Cを貫通し導体層458Aと導体層458Cとを接続するビア導体460Cを有する。 The inductor-embedded substrate 10 further has an upper build-up layer 450F on the first surface F of the core substrate 30. The upper build-up layer 450F penetrates the insulating layer 450A formed on the first surface F of the core substrate 30, the conductor layer 458A on the insulating layer 450A, and the insulating layer 450A, and passes through the first conductor layer 58F and the conductor layer 458A. It has a via conductor 460A connected to it. The upper build-up layer 450F further penetrates the insulating layer 450A, the insulating layer 450C on the conductor layer 458A, the conductor layer 458C on the insulating layer 450C, and the insulating layer 450C, and connects the conductor layer 458A and the conductor layer 458C to the via conductor 460C. Has.

インダクタ内蔵基板10は、さらに、コア基板30の第2面S上に下側のビルドアップ層450Sを有する。下側のビルドアップ層450Sはコア基板30の第2面S上に形成されている絶縁層450Bと絶縁層450B上の導体層458Bと絶縁層450Bを貫通し第2導体層58Sと導体層458Bを接続しているビア導体460Bとを有する。下側のビルドアップ層450Sはさらに絶縁層450Bと導体層458B上の絶縁層450Dと絶縁層450D上の導体層458Dと絶縁層450Dを貫通し導体層458Bと導体層458Dとを接続するビア導体460Dを有する。 The inductor-embedded substrate 10 further has a lower build-up layer 450S on the second surface S of the core substrate 30. The lower build-up layer 450S penetrates the insulating layer 450B formed on the second surface S of the core substrate 30, the conductor layer 458B on the insulating layer 450B, and the insulating layer 450B, and the second conductor layer 58S and the conductor layer 458B. Has a via conductor 460B connecting the above. The lower build-up layer 450S is a via conductor that further penetrates the insulating layer 450B, the insulating layer 450D on the conductor layer 458B, the conductor layer 458D on the insulating layer 450D, and the insulating layer 450D, and connects the conductor layer 458B and the conductor layer 458D. It has 460D.

実施形態のインダクタ内蔵基板は、さらに、上側のビルドアップ層450F上に開口471Fを有するソルダーレジスト層470Fと下側のビルドアップ層450S上に開口471Sを有するソルダーレジスト層470Sを有する。 The inductor-embedded substrate of the embodiment further has a solder resist layer 470F having an opening 471F on the upper build-up layer 450F and a solder resist layer 470S having an opening 471S on the lower build-up layer 450S.

ソルダーレジスト層470F、470Sの開口471F、471Sにより露出している導体層458C、458Dやビア導体460C、460Dの上面はパッドとして機能する。パッド上に、Ni/AuやNi/Pd/Au、Pd/Au、OSP等から成る保護膜472が形成されている。その保護膜上に半田バンプ476F、476Sが形成されている。上側のビルドアップ層450F上に形成されている半田バンプ476Fを介して図示しないICチップがインダクタ内蔵基板10に搭載される。下側のビルドアップ層450S上に形成されている半田バンプ476Sを介してインダクタ内蔵基板10は図示しないマザーボードに搭載される。 The upper surfaces of the conductor layers 458C and 458D and the via conductors 460C and 460D exposed by the openings 471F and 471S of the solder resist layers 470F and 470S function as pads. A protective film 472 made of Ni / Au, Ni / Pd / Au, Pd / Au, OSP, or the like is formed on the pad. Solder bumps 476F and 476S are formed on the protective film. An IC chip (not shown) is mounted on the inductor built-in substrate 10 via a solder bump 476F formed on the upper build-up layer 450F. The inductor built-in substrate 10 is mounted on a motherboard (not shown) via a solder bump 476S formed on the lower build-up layer 450S.

図1(B)は図1(A)中のコア基板30の一部を拡大して示す。コア基板30では、第1導体層58Fと第2導体層58Sとを接続するスルーホール導体36は、コア基板30を貫通する第1貫通孔20aに形成された第1スルーホール導体36Aと、コア基板30の開口20b内に充填された磁性体樹脂18の第2貫通孔18bに形成された第2スルーホール導体36Bとから成る。第1貫通孔20aの直径daと第2貫通孔18bの直径dbとはほぼ等しい。第1スルーホール導体36A、第2スルーホール導体36B内には樹脂充填剤16が充填され、スルーホールランド58SRは蓋めっきから成る。スルーホールランド58SRは、第1スルーホール導体36Aに形成された第1スルーホールランド58SRAと第2スルーホール導体36Bに形成された第2スルーホールランド58SRBとから成る。 FIG. 1 (B) shows an enlarged part of the core substrate 30 in FIG. 1 (A). In the core substrate 30, the through-hole conductor 36 connecting the first conductor layer 58F and the second conductor layer 58S includes the first through-hole conductor 36A formed in the first through hole 20a penetrating the core substrate 30 and the core. It is composed of a second through-hole conductor 36B formed in the second through hole 18b of the magnetic resin 18 filled in the opening 20b of the substrate 30. The diameter da of the first through hole 20a and the diameter db of the second through hole 18b are substantially equal to each other. The first through-hole conductor 36A and the second through-hole conductor 36B are filled with the resin filler 16, and the through-hole land 58SR is made of lid plating. The through-hole land 58SR includes a first through-hole land 58SRA formed on the first through-hole conductor 36A and a second through-hole land 58SRB formed on the second through-hole conductor 36B.

磁性体樹脂18は、酸化鉄フィラー(磁性体粒子)とエポキシ等の樹脂を含む。磁性体粒子として、FeO、Fe、Fe等の酸化鉄フィラーが挙げられる。磁性体樹脂中の酸化鉄フィラーの含有量は60重量%以上であることが好ましい。酸化鉄フィラーの粒子径は均一で無い方が、重量%を高め、透磁率及び伝熱性を高くできるため望ましい。 The magnetic resin 18 contains an iron oxide filler (magnetic particles) and a resin such as epoxy. As magnetic particles, FeO, include iron oxide filler such as Fe 2 O 3, Fe 3 O 4. The content of the iron oxide filler in the magnetic resin is preferably 60% by weight or more. It is desirable that the particle size of the iron oxide filler is not uniform because the weight% can be increased and the magnetic permeability and heat transfer property can be increased.

図1(B)に示されるように、コア基板30を貫通する第1貫通孔20aに形成された第1スルーホール導体36Aは、第1貫通孔20aに接触する。第1スルーホール導体36Aは、第1貫通孔20a上の第2無電解めっき膜32と、該第2無電解めっき膜32上の第2電解めっき膜34とから成る。磁性体樹脂18を貫通する第2貫通孔18bに形成された第2スルーホール導体36Bは、第2貫通孔18bに接触する。第2スルーホール導体36Bは、第2貫通孔18b上の第2無電解めっき膜32と、該第2無電解めっき膜32上の第2電解めっき膜34とから成る。 As shown in FIG. 1B, the first through-hole conductor 36A formed in the first through-hole 20a penetrating the core substrate 30 comes into contact with the first through-hole 20a. The first through-hole conductor 36A includes a second electrolytic plating film 32 on the first through hole 20a and a second electrolytic plating film 34 on the second electrolytic plating film 32. The second through-hole conductor 36B formed in the second through-hole 18b penetrating the magnetic resin 18 comes into contact with the second through-hole 18b. The second through-hole conductor 36B includes a second electrolytic plating film 32 on the second through hole 18b and a second electrolytic plating film 34 on the second electrolytic plating film 32.

第1スルーホールランド58SRA及び絶縁性基材20上の第2導体層58Sは、最下層の銅箔22と、該銅箔22上の第1無電解めっき膜24mと、第1無電解めっき膜24m上の第1電解めっき膜24dと、第1電解めっき膜24d上の第2無電解めっき膜32と、第2無電解めっき膜32上の第2電解めっき膜34と、該第2電解めっき膜34上の第3無電解めっき膜35と、該第3無電解めっき膜35上の第3電解めっき膜37とから成る。第2スルーホールランド58SRB及び磁性体樹脂18上の第2導体層58Sは、最下層の第1無電解めっき膜24mと、第1無電解めっき膜24m上の第1電解めっき膜24dと、第1電解めっき膜24d上の第2無電解めっき膜32と、第2無電解めっき膜32上の第2電解めっき膜34と、該第2電解めっき膜34上の第3無電解めっき膜35と、該第3無電解めっき膜35上の第3電解めっき膜37とから成る。第1無電解めっき膜24mと第1電解めっき膜24dとはシールド層24を構成する。 The first through hole land 58SRA and the second conductor layer 58S on the insulating base material 20 are the lowest layer copper foil 22, the first electroplating film 24m on the copper foil 22, and the first electroplating film. The first electroplating film 24d on 24 m, the second electroplating film 32 on the first electroplating film 24d, the second electroplating film 34 on the second electroplating film 32, and the second electroplating. It is composed of a third electroplating film 35 on the film 34 and a third electroplating film 37 on the third electroplating film 35. The second through hole land 58SRB and the second conductor layer 58S on the magnetic resin 18 are the first electroplating film 24m on the lowermost layer, the first electroplating film 24d on the first electroplating film 24m, and the first. 1 The second electroplating film 32 on the electroplating film 24d, the second electroplating film 34 on the second electroplating film 32, and the third electroplating film 35 on the second electroplating film 34. It is composed of a third electroplating film 37 on the third electroplating film 35. The first electrolytic plating film 24m and the first electrolytic plating film 24d form a shield layer 24.

実施形態のコア基板30は、図1(A)中に示される磁性体樹脂18に形成された第2スルーホール導体36Bを介して接続される第1導体層58F(接続パターン58FL)、第2導体層58S(接続パターン58SL)とは、ヘリカル状(コア基板の表裏面に対して平行方向の軸線上に沿って螺旋状)に配置され、第2スルーホール導体36Bと共にインダクタ59を形成する。 The core substrate 30 of the embodiment has a first conductor layer 58F (connection pattern 58FL) and a second through hole conductor 36B formed in the magnetic resin 18 shown in FIG. 1A. The conductor layer 58S (connection pattern 58SL) is arranged in a helical shape (spiral along the axis in the direction parallel to the front and back surfaces of the core substrate), and forms an inductor 59 together with the second through-hole conductor 36B.

実施形態のインダクタ内蔵基板10は、コア基板30の表面に第1導体層58Fと第2導体層58Sとが形成され、第1導体層58Fと第2導体層58Sとを接続する第2スルーホール導体36Bは、磁性体樹脂18を貫通する第2貫通孔18bに直接形成されている。このため、インダクタ内蔵基板10中の磁性体の割合が大きくなり、インダクタンスを大きくすることができる。 In the inductor-embedded substrate 10 of the embodiment, the first conductor layer 58F and the second conductor layer 58S are formed on the surface of the core substrate 30, and the second through hole connecting the first conductor layer 58F and the second conductor layer 58S. The conductor 36B is directly formed in the second through hole 18b that penetrates the magnetic resin 18. Therefore, the proportion of the magnetic material in the inductor built-in substrate 10 becomes large, and the inductance can be increased.

図1(B)に示されるように、実施形態のインダクタ内蔵基板10では、第2貫通孔18bの内壁には、磁性体樹脂の残渣が付着してなる突部18dが形成されている。突部18dの高さは10ミクロン以上、かつ、50ミクロン以下である。第2貫通孔18bにおける突部18dの形成位置は、コア基板を形成する絶縁性基材20の第2面Sに寄った位置である。実施形態では、ほぼ全ての突部18dの形成位置が第2面Sに寄った位置であるが、ほぼ全ての突部18dの形成位置が第1面Fに寄った位置であることも可能である。即ち、突部18dが、コア基板の第1面F又は第2面Sのいずれか一方に寄った位置に形成される。突部が第2貫通孔の一方に形成されるため、突部が第2貫通孔にランダムに形成されるのと比較し、コア基板の応力バランスが取れ、インダクタ内蔵基板10の信頼性が高まる。 As shown in FIG. 1 (B), in the inductor-embedded substrate 10 of the embodiment, a protrusion 18d formed by adhering a residue of the magnetic resin is formed on the inner wall of the second through hole 18b. The height of the protrusion 18d is 10 microns or more and 50 microns or less. The position of the protrusion 18d in the second through hole 18b is a position closer to the second surface S of the insulating base material 20 forming the core substrate. In the embodiment, the formation positions of almost all the protrusions 18d are close to the second surface S, but it is also possible that the formation positions of almost all the protrusions 18d are close to the first surface F. is there. That is, the protrusion 18d is formed at a position closer to either the first surface F or the second surface S of the core substrate. Since the protrusion is formed on one of the second through holes, the stress balance of the core substrate is balanced and the reliability of the inductor built-in substrate 10 is improved as compared with the case where the protrusion is randomly formed in the second through hole. ..

図1(A)に示されるように、インダクタ内蔵基板10では、複数の第2貫通孔18bにおける突部18dの形成位置は、コア基板30の厚み方向の中央位置CCよりも第2面Sに寄った位置である。即ち、中央位置CCから突部18dまでの距離d2は、突起18dから第2貫通孔18の第2面S側の開口18osまでの距離d1よりも大きい。実施形態では、突起18dから第2貫通孔18の第2面S側の開口18osに寄った位置に形成されるが、ほぼ全ての突部18dの形成位置が第1面Fに寄った位置である場合、突起18dから第2貫通孔18の第1面F側の開口18ofに寄った位置に形成される。製造工程において、突部18dが第2貫通孔18bの第2面S側の開口18os又は第1面F側の開口18ofに寄った位置に形成されている場合、第2貫通孔18b上に形成される第2スルーホール導体内に樹脂充填剤を充填する際に、第2スルーホール導体の断線の原因となる気泡を樹脂充填剤内に生じさせ難い。 As shown in FIG. 1A, in the inductor built-in substrate 10, the forming position of the protrusion 18d in the plurality of second through holes 18b is located on the second surface S rather than the central position CC in the thickness direction of the core substrate 30. It is a close position. That is, the distance d2 from the central position CC to the protrusion 18d is larger than the distance d1 from the protrusion 18d to the opening 18os on the second surface S side of the second through hole 18. In the embodiment, the protrusion 18d is formed at a position closer to the opening 18os on the second surface S side of the second through hole 18, but almost all the protrusions 18d are formed at a position closer to the first surface F. In some cases, it is formed at a position closer to the opening 18of on the first surface F side of the second through hole 18 from the protrusion 18d. In the manufacturing process, when the protrusion 18d is formed at a position closer to the opening 18os on the second surface S side or the opening 18of on the first surface F side of the second through hole 18b, it is formed on the second through hole 18b. When the resin filler is filled in the second through-hole conductor, it is difficult to generate air bubbles in the resin filler that cause disconnection of the second through-hole conductor.

[実施形態のインダクタ内蔵基板の製造方法]
図2〜図4に実施形態のインダクタ内蔵基板の製造方法が示される。
絶縁性基材20の両面に銅箔22の積層された銅張り積層板から成る基板20zが準備される(図2(A))。絶縁性基材20に磁性体樹脂充填用の開口20bが形成される(図2(B))。開口20b内に90重量%の酸化鉄フィラー(磁性体粒子)とエポキシ樹脂からなる樹脂ペーストが真空印刷される。樹脂ペーストが、樹脂ペーストの粘度が常温の2倍以下となる温度で仮硬化(半硬化)され仮硬化磁性体樹脂18βが形成される(図2(C))。
[Manufacturing Method of Inductor Built-in Substrate of the Embodiment]
2 to 4 show a method of manufacturing the inductor-embedded substrate of the embodiment.
A substrate 20z made of a copper-clad laminate in which copper foil 22 is laminated on both sides of the insulating base material 20 is prepared (FIG. 2 (A)). An opening 20b for filling the magnetic resin is formed in the insulating base material 20 (FIG. 2B). A resin paste composed of 90% by weight of iron oxide filler (magnetic particles) and epoxy resin is vacuum-printed in the opening 20b. The resin paste is temporarily cured (semi-cured) at a temperature at which the viscosity of the resin paste is twice or less the room temperature to form the temporarily cured magnetic resin 18β (FIG. 2 (C)).

絶縁性基材20の表面、開口20bから露出する仮硬化磁性体樹脂18βの表面に無電解めっき処理で第1無電解めっき膜24mと、電解めっき処理で第1電解めっき膜24dが形成される(図2(D))。第1無電解めっき膜24mと第1電解めっき膜24dとはシールド層24を構成する。 A first electroless plating film 24m is formed by electroless plating treatment and a first electrolytic plating film 24d is formed by electroplating treatment on the surface of the insulating base material 20 and the surface of the temporarily cured magnetic resin 18β exposed from the opening 20b. (Fig. 2 (D)). The first electrolytic plating film 24m and the first electrolytic plating film 24d form a shield layer 24.

絶縁性基材20に機械ドリルまたはレーザ加工等で第1貫通孔20aが形成される(図2(E))。この際に、第1貫通孔20aのランダムな位置に絶縁性基材の残渣から成る突部20dが形成されている。この後、薬液により第1貫通孔20aがデスミア処理され、突部20dが削除される(図3(A))。デスミア処理の際に、第1無電解めっき膜24mと第1電解めっき膜24dとから成るシールド層24で覆われた仮硬化磁性体樹脂18βは、薬液の影響を受けない。仮硬化磁性体樹脂18βの表面の酸化鉄フィラーは、デスミア処理の影響を受けない。 The first through hole 20a is formed in the insulating base material 20 by mechanical drilling, laser machining, or the like (FIG. 2 (E)). At this time, protrusions 20d made of the residue of the insulating base material are formed at random positions of the first through holes 20a. After that, the first through hole 20a is desmeared with the chemical solution, and the protrusion 20d is deleted (FIG. 3 (A)). During the desmear treatment, the temporarily cured magnetic resin 18β covered with the shield layer 24 composed of the first electrolytic plating film 24m and the first electrolytic plating film 24d is not affected by the chemical solution. The iron oxide filler on the surface of the temporarily cured magnetic resin 18β is not affected by the desmear treatment.

仮硬化磁性体樹脂18βに機械ドリルまたはレーザ加工等で第2貫通孔18bが形成される(図3(B))。機械ドリルの加工条件、または、レーザ加工の照射条件を調整することで、第2貫通孔18bにおける突部18dの形成位置は、絶縁性基材20の第2面Sに寄った位置である。実施形態では、ほぼ全ての突部18dの形成位置が第2面Sに寄った位置であるが、ほぼ全ての突部18dの形成位置が第1面Fに寄った位置であることも可能である。即ち、突部18dが、コア基板の第1面F又は第2面Sのいずれか一方に寄った位置に形成される。 The second through hole 18b is formed in the temporarily cured magnetic resin 18β by mechanical drilling, laser machining, or the like (FIG. 3 (B)). By adjusting the machining conditions of the mechanical drill or the irradiation conditions of laser machining, the formation position of the protrusion 18d in the second through hole 18b is a position closer to the second surface S of the insulating base material 20. In the embodiment, the formation positions of almost all the protrusions 18d are close to the second surface S, but it is also possible that the formation positions of almost all the protrusions 18d are close to the first surface F. is there. That is, the protrusion 18d is formed at a position closer to either the first surface F or the second surface S of the core substrate.

更に、複数の第2貫通孔18bにおける突部18dの形成位置は、絶縁性基材20の厚み方向の中央位置CCよりも第2面Sに寄った位置である。即ち、中央位置CCから突部18dまでの距離d2は、突起18dから第2貫通孔18の第2面S側の開口18osまでの距離d1よりも大きい。実施形態では、突起18dから第2貫通孔18の第2面S側の開口18osに寄った位置に形成されるが、ほぼ全ての突部18dの形成位置が第1面Fに寄った位置である場合、突起18dから第2貫通孔18の第1面F側の開口18ofに寄った位置に形成される。 Further, the forming position of the protrusion 18d in the plurality of second through holes 18b is a position closer to the second surface S than the central position CC in the thickness direction of the insulating base material 20. That is, the distance d2 from the central position CC to the protrusion 18d is larger than the distance d1 from the protrusion 18d to the opening 18os on the second surface S side of the second through hole 18. In the embodiment, the protrusion 18d is formed at a position closer to the opening 18os on the second surface S side of the second through hole 18, but almost all the protrusions 18d are formed at a position closer to the first surface F. In some cases, it is formed at a position closer to the opening 18of on the first surface F side of the second through hole 18 from the protrusion 18d.

この実施形態では、90重量%の酸化鉄フィラーを含むため、本硬化後の孔開けは容易ではないが、本硬化前に形成するため、貫通孔を容易に形成することができる。仮硬化状態の磁性材層を加熱して含まれる樹脂を架橋させ、本硬化状態にして磁性体樹脂18が形成される。ここでは、150℃〜190℃で1時間加熱する。高圧水洗により、孔開け時の加工スミアが除去可能な範囲で取り除かれる。通常、デスミアはアルカリ性薬剤で行われるが、アルカリ性薬剤は樹脂を膨潤・剥離する過程で磁性体樹脂18に含まれる酸化鉄フィラーを脱落させる恐れがあるため、ここでは高圧水洗が行われる。絶縁性基材20、磁性体樹脂18の表面の第1電解めっき膜24d上、第1貫通孔20a、第2貫通孔18bの表面に、無電解めっき処理で第2無電解めっき膜32と、電解めっき処理で第2電解めっき膜34が形成される。第2無電解めっき膜32と第2電解めっき膜34とで、第1貫通孔20aに第1スルーホール導体36Aが、第2貫通孔18bに第2スルーホール導体36Bが形成される(図3(C))。第2スルーホール導体36Bには、突部18dに起因するスルーホール突部36Bdが形成される。 In this embodiment, since 90% by weight of the iron oxide filler is contained, it is not easy to make holes after the main curing, but since it is formed before the main curing, through holes can be easily formed. The magnetic material layer in the temporarily cured state is heated to crosslink the contained resin, and the magnetic material resin 18 is formed in the main cured state. Here, it is heated at 150 ° C. to 190 ° C. for 1 hour. By high-pressure washing, the processed smear at the time of drilling is removed to the extent that it can be removed. Normally, desmear is performed with an alkaline chemical, but since the alkaline chemical may cause the iron oxide filler contained in the magnetic resin 18 to fall off in the process of swelling and peeling the resin, high-pressure water washing is performed here. On the surface of the insulating base material 20 and the magnetic resin 18 on the first electrolytic plating film 24d, on the surfaces of the first through hole 20a and the second through hole 18b, the second electroless plating film 32 was formed by electroless plating. The second electroplating film 34 is formed by the electroplating treatment. The second electrolytic plating film 32 and the second electrolytic plating film 34 form a first through-hole conductor 36A in the first through hole 20a and a second through-hole conductor 36B in the second through hole 18b (FIG. 3). (C)). The second through-hole conductor 36B is formed with a through-hole protrusion 36Bd caused by the protrusion 18d.

第1貫通孔20aに形成された第1スルーホール導体36A内、第2貫通孔18bに形成された第2スルーホール導体36B内に樹脂充填剤16が充填され、コア基板30の表面が研磨される(図3(D))。第2スルーホール導体36B内への樹脂充填剤は、第2スルーホール36Bの第2面S側の開口36Bs側が減圧された状態で、樹脂充填剤を第1面側の開口36Bf側から充填することで行われる。突部18dが第2貫通孔18bの第2面S側の開口18osに寄った位置に形成されているため、第2貫通孔18b上に形成される第2スルーホール導体36B内に樹脂充填剤を充填する際に、スルーホール突部36Bdに干渉されず、第2スルーホール導体の断線の原因となる気泡を樹脂充填剤16内に生じさせ難い。 The resin filler 16 is filled in the first through-hole conductor 36A formed in the first through-hole 20a and the second through-hole conductor 36B formed in the second through-hole 18b, and the surface of the core substrate 30 is polished. (Fig. 3 (D)). The resin filler in the second through-hole conductor 36B is filled with the resin filler from the opening 36Bf side on the first surface side in a state where the opening 36Bs side on the second surface S side of the second through hole 36B is depressurized. It is done by. Since the protrusion 18d is formed at a position closer to the opening 18os on the second surface S side of the second through hole 18b, the resin filler is formed in the second through hole conductor 36B formed on the second through hole 18b. Is not interfered with by the through-hole protrusion 36Bd, and bubbles that cause disconnection of the second through-hole conductor are unlikely to be generated in the resin filler 16.

第2電解めっき膜34上、及び、樹脂充填剤16の露出面に無電解めっきにより第3無電解めっき膜35が形成され、第3無電解めっき膜35上に第3電解めっき膜37が形成される(図4(A))。第3電解めっき膜37上に所定パターンのエッチングレジスト54が形成される(図4(B))。 A third electroless plating film 35 is formed on the second electrolytic plating film 34 and on the exposed surface of the resin filler 16 by electroless plating, and a third electrolytic plating film 37 is formed on the third electroless plating film 35. (Fig. 4 (A)). An etching resist 54 having a predetermined pattern is formed on the third electrolytic plating film 37 (FIG. 4 (B)).

エッチングレジスト54から露出する第3電解めっき膜37、第3無電解めっき膜35、第2電解めっき膜34、第2無電解めっき膜32、第1電解めっき膜24d、第1無電解めっき膜24m、銅箔22が除去された後、エッチングレジストが除去され、第1導体層58F、第2導体層58Sが形成され、コア基板30が完成する(図4(C))。 The third electrolytic plating film 37, the third electrolytic plating film 35, the second electrolytic plating film 34, the second electrolytic plating film 32, the first electrolytic plating film 24d, and the first electrolytic plating film 24m exposed from the etching resist 54. After the copper foil 22 is removed, the etching resist is removed, the first conductor layer 58F and the second conductor layer 58S are formed, and the core substrate 30 is completed (FIG. 4 (C)).

コア基板30上に公知の製造方法により、上側のビルドアップ層450F、下側のビルドアップ層450S、ソルダーレジスト層470F、470S、半田バンプ476F、476Sが形成される(図1(A))。 An upper build-up layer 450F, a lower build-up layer 450S, a solder resist layer 470F, 470S, and solder bumps 476F and 476S are formed on the core substrate 30 by a known manufacturing method (FIG. 1 (A)).

実施形態のインダクタ内蔵基板の製造方法では、磁性体樹脂18の第2貫通孔18bに第2無電解めっき膜32、第2電解めっき膜34からなる第2スルーホール導体36Bを形成するため、インダクタ内蔵基板10の磁性体樹脂18の体積を大きくし、インダクタンスを大きくすることができる。 In the method for manufacturing an inductor-embedded substrate of the embodiment, an inductor is formed in order to form a second through-hole conductor 36B composed of a second electroless plating film 32 and a second electrolytic plating film 34 in the second through hole 18b of the magnetic resin 18. The volume of the magnetic resin 18 of the built-in substrate 10 can be increased to increase the inductance.

10 インダクタ内蔵基板
16 樹脂充填剤
18 磁性体樹脂
18b 第2貫通孔
18d 突部
20 絶縁性基材
20a 第1貫通孔
20b 開口
30 コア基板
36A 第1スルーホール導体
36B 第2スルーホール導体
10 Inductor built-in substrate 16 Resin filler 18 Magnetic resin 18b Second through hole 18d Protrusion 20 Insulating base material 20a First through hole 20b Opening 30 Core substrate 36A First through hole conductor 36B Second through hole conductor

Claims (8)

複数の開口と第1貫通孔が形成され、第1面と第1面の反対側の第2面とを有するコア基板と、
前記複数の開口内に充填され、複数の第2貫通孔を有する磁性体樹脂と、
を有するインダクタ内蔵基板であって、
前記第1貫通孔に形成された金属膜から成る第1スルーホール導体と、
前記複数の第2貫通孔に形成された金属膜から成る複数の第2スルーホール導体と、を有するインダクタ内蔵基板であって、
前記複数の第2貫通孔の内壁には、それぞれ磁性体樹脂の残渣が付着してなる突部が形成されており、
前記複数の第2貫通孔における突部の形成位置は、前記コア基板の第1面又は第2面のいずれか一方に寄った位置である。
A core substrate in which a plurality of openings and a first through hole are formed and has a first surface and a second surface opposite to the first surface.
A magnetic resin filled in the plurality of openings and having a plurality of second through holes,
It is a board with a built-in inductor that has
A first through-hole conductor made of a metal film formed in the first through hole,
An inductor-embedded substrate having a plurality of second through-hole conductors made of a metal film formed in the plurality of second through holes.
On the inner walls of the plurality of second through holes, protrusions formed by adhering the residue of the magnetic resin are formed.
The position of forming the protrusion in the plurality of second through holes is a position closer to either the first surface or the second surface of the core substrate.
請求項1のインダクタ内蔵基板であって、
複数の第2貫通孔における突部の形成位置は、前記コア基板の厚み方向の中央位置よりも第1面又は第2面のいずれか一方に寄った位置である。
The substrate with a built-in inductor according to claim 1.
The forming position of the protrusion in the plurality of second through holes is a position closer to either the first surface or the second surface than the central position in the thickness direction of the core substrate.
請求項1又は請求項2のインダクタ内蔵基板であって、
前記コア基板は、芯材と無機粒子と樹脂を含み、
前記磁性体樹脂は、芯材を含まない。
The substrate with a built-in inductor according to claim 1 or 2.
The core substrate contains a core material, inorganic particles, and a resin.
The magnetic resin does not contain a core material.
請求項1〜請求項3のいずれか1のインダクタ内蔵基板であって、
前記コア基板の前記複数の開口の内壁には金属膜が形成されない。
A substrate with a built-in inductor according to any one of claims 1 to 3.
No metal film is formed on the inner walls of the plurality of openings of the core substrate.
請求項1〜請求項4のいずれか1のインダクタ内蔵基板であって、
前記複数の第2スルーホール導体の内部に樹脂充填剤が充填されている。
A substrate with a built-in inductor according to any one of claims 1 to 4.
A resin filler is filled inside the plurality of second through-hole conductors.
第1面と第1面の反対側の第2面とを有する絶縁性基材に複数の開口を形成することと、
前記複数の開口内に磁性体粒子を含む磁性体樹脂を充填することと、
前記絶縁性基材に第1貫通孔を形成することと、
前記磁性体樹脂に複数の第2貫通孔を形成することと、
前記第1貫通孔内及び前記複数の第2貫通孔内に金属膜から成るスルーホール導体を形成することと、を有するインダクタ内蔵基板の製造方法であって、
前記第1貫通孔の形成後、デスミア処理を行い、
前記複数の第2貫通孔の形成の際に、複数の第2貫通孔における突部の形成位置が前記絶縁性基材の第1面又は第2面のいずれか一方に寄った位置となるように、複数の第2貫通孔の内壁にそれぞれ磁性体樹脂の残渣が付着してなる突部を形成する。
Forming a plurality of openings in an insulating base material having a first surface and a second surface opposite to the first surface, and
Filling the plurality of openings with a magnetic resin containing magnetic particles,
Forming the first through hole in the insulating base material and
Forming a plurality of second through holes in the magnetic resin and
A method for manufacturing an inductor-embedded substrate, which comprises forming a through-hole conductor made of a metal film in the first through hole and in the plurality of second through holes.
After the formation of the first through hole, a desmear treatment is performed.
When the plurality of second through holes are formed, the positions of the protrusions in the plurality of second through holes are set to be closer to either the first surface or the second surface of the insulating base material. In addition, a protrusion formed by the residue of the magnetic resin adhering to the inner walls of the plurality of second through holes is formed.
請求項6のインダクタ内蔵基板の製造方法であって、
前記複数の第2貫通孔の形成後、水洗処理を行う。
The method for manufacturing a substrate with a built-in inductor according to claim 6.
After forming the plurality of second through holes, a washing treatment is performed.
請求項7のインダクタ内蔵基板の製造方法であって、
前記第1貫通孔、前記複数の第2貫通孔に金属膜からなるスルーホール導体を形成した後、
前記スルーホール導体内に樹脂充填剤を充填する。
The method for manufacturing a substrate with a built-in inductor according to claim 7.
After forming through-hole conductors made of a metal film in the first through hole and the plurality of second through holes,
The through-hole conductor is filled with a resin filler.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023181742A1 (en) * 2022-03-22 2023-09-28 味の素株式会社 Manufacturing method for magnetic substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023181742A1 (en) * 2022-03-22 2023-09-28 味の素株式会社 Manufacturing method for magnetic substrate

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