JP2021089703A - Socモジュール - Google Patents
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- JP2021089703A JP2021089703A JP2020076192A JP2020076192A JP2021089703A JP 2021089703 A JP2021089703 A JP 2021089703A JP 2020076192 A JP2020076192 A JP 2020076192A JP 2020076192 A JP2020076192 A JP 2020076192A JP 2021089703 A JP2021089703 A JP 2021089703A
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- 238000000034 method Methods 0.000 claims description 15
- 238000012546 transfer Methods 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
- G06F12/0893—Caches characterised by their organisation or structure
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1668—Details of memory controller
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0215—Addressing or allocation; Relocation with look ahead addressing means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1668—Details of memory controller
- G06F13/1678—Details of memory controller using bus width
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/38—Information transfer, e.g. on bus
- G06F13/40—Bus structure
- G06F13/4063—Device-to-bus coupling
- G06F13/4068—Electrical coupling
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1016—Performance improvement
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1041—Resource optimization
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2245—Memory devices with an internal cache buffer
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Databases & Information Systems (AREA)
- Memory System Of A Hierarchy Structure (AREA)
- Memory System (AREA)
- Dram (AREA)
Abstract
Description
11 プロセッサー
12 DRAMチップ
13 SRAM
15 DRAMコントローラー
20 標準インターフェース
30 システムバス
31 第1バスインターフェース
32 第2バスインターフェース
200 SOCモジュール
202、202a、202b、…202n マイクロプロセッサ
204 DRAM
206 DRAMコントローラー
208、208a、208b、…208n ラインキャッシュユニット
210 アクセスアービトレータ
Claims (11)
- 余分なメモリアクセスを避けるSOCモジュールであって、
少なくとも1つのマイクロプロセッサと、
前記少なくとも1つのマイクロプロセッサと統合して前記SOCモジュールに形成されるDRAMと、
前記少なくとも1つのマイクロプロセッサ及び前記DRAMに電気的に接続され、少なくとも1つのラインキャッシュユニットを有するDRAMコントローラーと、を有し、
各前記ラインキャッシュユニットは、各前記マイクロプロセッサに対応して設けられ、
各前記マイクロプロセッサは、それぞれ対応の各前記ラインキャッシュユニットによって前記DRAMに対して読み取りまたは書き込みを行うことを特徴とする、
SOCモジュール。 - 第1バスインターフェースを介して前記DRAMと前記DRAMコントローラーを接続し、
第2バスインターフェースを介して前記少なくとも1つのマイクロプロセッサと前記DRAMコントローラーを接続することを特徴とする、
請求項1に記載のSOCモジュール。 - 前記第2バスインターフェースの幅は、前記第1バスインターフェースより小さいことを特徴とする、
請求項2に記載のSOCモジュール。 - 前記少なくとも1つのマイクロプロセッサ及び前記DRAMは、同じ論理回路及びアナログ回路プロセスによって統合され、前記SOCモジュールに形成されることを特徴とする、
請求項1に記載のSOCモジュール。 - 前記SOCモジュールが複数の前記マイクロプロセッサを有する場合、
前記DRAMコントローラーは、前記複数の前記マイクロプロセッサに対応して設けられる複数の前記ラインキャッシュユニットを有することを特徴とする、
請求項1に記載のSOCモジュール。 - 前記DRAMコントローラーは、アクセスアービトレータを更に有し、
前記アクセスアービトレータは、各前記ラインキャッシュユニットに電気的に接続され、前記マイクロプロセッサの内の、前記DRAMに対して読み取りまたは書き込みを行う1つのマイクロプロセッサを設定することを特徴とする、
請求項5に記載のSOCモジュール。 - 前記少なくとも1つのマイクロプロセッサが前記DRAMを読み取って、且つ前記ラインキャッシュユニットに保存されるデータが前回読み取ったラインデータではない場合、
前記少なくとも1つのマイクロプロセッサは、前記DRAMコントローラーによって前記DRAMから1つの新しいラインデータの読み取りを命令し、
前記新しいラインデータは、前記ラインキャッシュユニットに保存され、前記少なくとも1つのマイクロプロセッサによって読み取られることを特徴とする、
請求項1に記載のSOCモジュール。 - 前記少なくとも1つのマイクロプロセッサは、同時に前記新しいラインデータの読み取りアドレスをマークすることを特徴とする、
請求項7に記載のSOCモジュール。 - 前記少なくとも1つのマイクロプロセッサによってデータを前記DRAMに書き込み、且つ前記データのアドレス及び前回のデータのアドレスが同じである場合、
前記少なくとも1つのマイクロプロセッサは、前記データをそのまま前記ラインキャッシュユニットに保存し、且つ前記DRAMに書き込むことを特徴とする、
請求項1に記載のSOCモジュール。 - 前記データのアドレス及び前回のデータのアドレスが異なる場合、
前記少なくとも1つのマイクロプロセッサは、まず、前記DRAMを読み取って、読み込みが完成してから、前記DRAMに書き込むことができるように前記データを前記ラインキャッシュユニットに保存することを特徴とする、
請求項9に記載のSOCモジュール。 - 前記少なくとも1つのマイクロプロセッサが前記ラインキャッシュユニットによって前記DRAMに対して操作を行う場合、
前記少なくとも1つのマイクロプロセッサは、ブロック全体のデータ転送を待つ必要がなく、それぞれのデータのアドレスに対して操作を行う特徴とする、
請求項1に記載のSOCモジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW108144004A TWI739227B (zh) | 2019-12-03 | 2019-12-03 | 避免多餘記憶體存取的系統單晶片模組 |
TW108144004 | 2019-12-03 |
Publications (2)
Publication Number | Publication Date |
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JP2021089703A true JP2021089703A (ja) | 2021-06-10 |
JP6936528B2 JP6936528B2 (ja) | 2021-09-15 |
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JP2020076192A Active JP6936528B2 (ja) | 2019-12-03 | 2020-04-22 | Socモジュール |
Country Status (4)
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US (1) | US11126560B2 (ja) |
JP (1) | JP6936528B2 (ja) |
CN (1) | CN112908381A (ja) |
TW (1) | TWI739227B (ja) |
Family Cites Families (21)
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JPH09282221A (ja) | 1996-04-19 | 1997-10-31 | Hitachi Ltd | 主記憶制御装置 |
JP2003044354A (ja) | 2001-07-26 | 2003-02-14 | Matsushita Electric Ind Co Ltd | メモリ制御装置 |
JP2004171209A (ja) | 2002-11-19 | 2004-06-17 | Matsushita Electric Ind Co Ltd | 共有メモリデータ転送装置 |
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KR102059256B1 (ko) * | 2015-06-05 | 2019-12-24 | 애플 인크. | Hdr 콘텐츠의 렌더링 및 디스플레이 |
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KR102414047B1 (ko) * | 2017-10-30 | 2022-06-29 | 에스케이하이닉스 주식회사 | 통합 메모리 디바이스 및 그의 동작 방법 |
US11385982B2 (en) * | 2019-05-02 | 2022-07-12 | Apple Inc. | General purpose input/output with hysteresis |
US11232047B2 (en) * | 2019-05-28 | 2022-01-25 | Rambus Inc. | Dedicated cache-related block transfer in a memory system |
-
2019
- 2019-12-03 TW TW108144004A patent/TWI739227B/zh active
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2020
- 2020-03-13 CN CN202010175294.7A patent/CN112908381A/zh active Pending
- 2020-04-22 JP JP2020076192A patent/JP6936528B2/ja active Active
- 2020-05-06 US US16/867,758 patent/US11126560B2/en active Active
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Publication number | Publication date |
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CN112908381A (zh) | 2021-06-04 |
US11126560B2 (en) | 2021-09-21 |
JP6936528B2 (ja) | 2021-09-15 |
TW202123018A (zh) | 2021-06-16 |
TWI739227B (zh) | 2021-09-11 |
US20210165740A1 (en) | 2021-06-03 |
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