JP2021082614A - Light-emitting device - Google Patents

Abstract

To make electric charge hard to be stacked on a sealing film when sealing an organic EL element by the sealing film.SOLUTION: A part of a second insulating layer 150 is one example of a structure. A light-emitting unit 140 is formed on a substrate 100, and includes an organic layer 120. A first lead-out wiring 114 is formed on the substrate 100, and electrically connected to the light-emitting unit 140. A part of the second insulating layer 150 is located on the first lead-out wiring 114. A first insulating layer 156 is composed of an inorganic insulation material, and covers a portion located on the first lead-out wiring 114 among edges of the second insulating layer 150. A sealing film 160 is formed on the substrate 100, and covers the second insulating layer 150, the first insulating layer 156, and the light-emitting unit 140. The second insulating layer 150 or the first insulating layer 156 is located between the sealing film 160 and the first lead-out wiring 114.SELECTED DRAWING: Figure 1

Description

The present invention relates to a light emitting device.

In recent years, the development of a light emitting device having an organic EL (Organic Electroluminescence) element as a light emitting element has been progressing. The organic EL element has a structure in which an organic layer is sandwiched between a first electrode and a second electrode. Since the organic layer is sensitive to moisture and oxygen, the organic EL element needs to be sealed. One of the methods for sealing an organic EL element is a method using a sealing film. For example, Patent Documents 1 and 2 describe that a laminated film in which a plurality of sealing layers are laminated is used as the sealing film.

For example, in Patent Document 1, calcium oxide, alumina, silica, titania, indium oxide, tin oxide, silicon oxide, silicon nitride, or aluminum nitride is used as the material of the lower sealing layer, and the upper sealing It is described that an organic layer is used as the stop layer.

Further, Patent Document 2 describes that the sealing film has a four-layer structure. Then, SiN, SiON, or SION is used as the material of the lowermost sealing layer, amorphous silicon, SiO ₂ , or SiO is used as the sealing layer above it, and an organic substance is used as the sealing layer above it. It is described that SiN, SiON, or SiO is used for the upper sealing layer.

Japanese Unexamined Patent Publication No. 2012-238611 Japanese Unexamined Patent Publication No. 2014-179278

When the organic EL element is sealed using the sealing film, the sealing film is in contact with both the first electrode and the second electrode. As a result of the study by the present inventor, when the sealing film has a laminated structure of a conductive film and an insulating film (particularly when this laminated structure is repeatedly laminated), the capacitive element having resistance to the sealing film. Turned out to work as. The presence of such a capacitive element affects the light emission quality of the light emitting device and the inspection of the light emitting device. Here, when a voltage is applied between the first electrode and the second electrode in order to operate the organic EL element, the timing at which the organic EL element emits light is delayed due to the accumulation of electric charges in the sealing film. When the voltage is no longer applied between the first electrode and the second electrode in order to stop the organic EL element, the electric charge accumulated in the sealing film flows toward the organic EL element, and the light emission of the organic EL element is stopped. The timing to do it will be delayed.

As an example of the problem to be solved by the present invention, when an organic EL element is sealed with a sealing film, it is difficult for electric charges to be accumulated in the sealing film.

The invention according to claim 1 includes a substrate and
A light emitting portion formed on the substrate and having an organic layer,
Wiring formed on the substrate other than the region where the light emitting portion is formed and electrically connected to the light emitting portion, and
An insulating structure formed on at least a part of the wiring and
A first insulating layer made of an inorganic insulating material, which covers a portion of the edge of the structure located above the wiring,
A sealing film formed on the substrate and covering the structure, at least a part of the first insulating layer, and the light emitting portion.
With
A light emitting device in which the structure or the first insulating layer is located between the sealing film and the wiring.

It is a top view of the light emitting device which concerns on 1st Embodiment. It is the figure which removed the partition wall, the 2nd electrode, the organic layer, the 1st insulating layer, and the 2nd insulating layer from FIG. FIG. 1 is a cross-sectional view taken along the line AA of FIG. It is a cross-sectional view of BB of FIG. FIG. 5 is a sectional view taken along the line CC of FIG. It is an enlarged view of the area surrounded by the dotted line α of FIG. It is an equivalent circuit diagram of the light emitting device when the sealing film is in contact with the 1st lead wire and the 2nd lead wire. It is a top view which shows the structure of the light emitting device which concerns on the modification. It is a top view which shows the structure of the light emitting device which concerns on 2nd Embodiment. It is the figure which removed the 2nd electrode from FIG. It is the figure which removed the organic layer, the 2nd insulating layer, and the 1st insulating layer from the figure. 9 is a cross-sectional view taken along the line DD of FIG.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all drawings, similar components are designated by the same reference numerals, and description thereof will be omitted as appropriate.

(First Embodiment)
FIG. 1 is a plan view of the light emitting device 10 according to the first embodiment. FIG. 2 is a diagram in which the partition wall 170, the second electrode 130, the organic layer 120, the first insulating layer 156, and the second insulating layer 150 are removed from FIG. 3 is a sectional view taken along the line AA of FIG. 1, FIG. 4 is a sectional view taken along the line BB of FIG. 1, and FIG. 5 is a sectional view taken along the line CC of FIG. In FIGS. 1 and 2, the sealing film 160 is shown by a dotted line for explanation.

The light emitting device 10 according to the embodiment includes a substrate 100, a light emitting unit 140, a first lead-out wiring (wiring) 114, a second insulating layer 150, a first insulating layer 156, and a sealing film 160. A part of the second insulating layer 150 is an example of a structure. The light emitting unit 140 is formed on the substrate 100 and has an organic layer 120. The first lead-out wiring 114 is formed in a region other than the region of the substrate 100 where the light emitting portion 140 is formed, and is electrically connected to the light emitting portion 140. A part of the second insulating layer 150 is located above the first lead-out wiring 114. The first insulating layer 156 is made of an inorganic insulating material and covers a portion of the edge of the second insulating layer 150 located above the first lead wiring 114. The sealing film 160 is formed on the substrate 100 and covers at least a part of the second insulating layer 150 and the first insulating layer 156, and the light emitting portion 140. A second insulating layer 150 or a first insulating layer 156 is located between the sealing film 160 and the first lead-out wiring 114. Hereinafter, a detailed description will be given.

In the example shown in this figure, the light emitting device 10 is a display device, and is a substrate 100, a first electrode 110, a plurality of first terminals 112 (terminals), a plurality of second terminals 132 (terminals), a light emitting unit 140, and a second. Insulation layer 150, a plurality of openings 152, a plurality of openings 154, a first insulation layer 156, a plurality of first lead-out wires 114 (wiring), an organic layer 120, a second electrode 130, a plurality of second lead-out wires 134 (wiring). , And a plurality of partition walls 170.

When the light emitting device 10 is a bottom emission type described later, the substrate 100 is formed of a translucent material such as glass or a translucent resin. However, when the light emitting device 10 is a top emission type described later, the substrate 100 may be made of a material having no translucency. The substrate 100 is a polygon such as a rectangle. The substrate 100 may have flexibility. When the substrate 100 has flexibility, the thickness of the substrate 100 is, for example, 10 μm or more and 1000 μm or less. In particular, when the substrate 100 is glass, the thickness of the substrate 100 is, for example, 200 μm or less. When the substrate 100 is a resin, the substrate 100 is formed by using, for example, PEN (polyethylene naphthalate), PES (polyether sulphon), PET (polyethylene terephthalate), or polyimide. Further, when the substrate 100 is a resin, an inorganic barrier film such as _{SiN x} or SiON is formed on at least one surface (preferably both sides) of the substrate 100 in order to prevent moisture from permeating through the substrate 100. ..

The light emitting unit 140 has an organic EL element. This organic EL element has a configuration in which the first electrode 110, the organic layer 120, and the second electrode 130 are laminated in this order. The light emitting unit 140 is provided for each pixel of the display device.

The first electrode 110 is a transparent electrode having light transmittance. The transparent conductive material constituting the transparent electrode is a material containing a metal, for example, a metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide), ZnO (Zinc Oxide). is there. The thickness of the first electrode 110 is, for example, 10 nm or more and 500 nm or less. The first electrode 110 is formed by using, for example, a sputtering method or a vapor deposition method. The first electrode 110 may be a carbon nanotube or a conductive organic material such as PEDOT / PSS.

The organic layer 120 has a light emitting layer. The organic layer 120 has, for example, a structure in which a hole injection layer, a light emitting layer, and an electron injection layer are laminated. A hole transport layer may be formed between the hole injection layer and the light emitting layer. Further, an electron transport layer may be formed between the light emitting layer and the electron injection layer. The organic layer 120 may be formed by a vapor deposition method. Further, at least one layer of the organic layer 120, for example, a layer in contact with the first electrode 110 may be formed by a coating method such as an inkjet method, a printing method, or a spray method. In this case, the remaining layer of the organic layer 120 is formed by a thin-film deposition method. Further, all the layers of the organic layer 120 may be formed by using a coating method.

The second electrode 130 is made of, for example, a metal selected from the first group consisting of Al, Au, Ag, Pt, Mg, Sn, Zn, and In, or an alloy of the metal selected from the first group. Contains a metal layer. In this case, the second electrode 130 has a light-shielding property. The thickness of the second electrode 130 is, for example, 10 nm or more and 500 nm or less. However, the second electrode 130 may be formed by using the material exemplified as the material of the first electrode 110. The second electrode 130 is formed by using, for example, a sputtering method or a vapor deposition method.

The materials of the first electrode 110 and the second electrode 130 described above are examples of a case where light is transmitted through the substrate 100 (for example, a bottom emission type in the light emitting device 10). On the other hand, there is a case where light is transmitted on the side opposite to the substrate 100 (for example, the top emission type in the light emitting device 10). This top emission type has two types of laminated structures, a reverse product type and a forward product type. In the reverse product type, the material of the first electrode 110 and the material of the second electrode 130 are opposite to those of the bottom emission type. That is, the material of the second electrode 130 described above is used as the material of the first electrode 110, and the material of the first electrode 110 described above is used as the material of the second electrode 130. In the other forward product type, the material of the first electrode 110 is formed on the material of the second electrode 130 described above, the organic layer 120 is further formed on the material, and the second electrode 130 is formed thinly on the organic layer 120. By doing so, the structure is such that light is taken out from the side opposite to the substrate 100. The light emitting device 10 according to the present embodiment may have either a bottom emission type structure or the above-mentioned two types of top emission type structures.

Further, the first electrode 110 extends in a line shape in the first direction (Y direction in FIG. 1). The end of the first electrode 110 is connected to the first lead-out wiring 114. The first lead-out wiring 114 has a conductive layer made of the same material as the first electrode 110. This conductive layer is integrated with the first electrode 110. In the example shown in this figure, the end of the first lead-out wiring 114 is the first terminal 112. Further, since a plurality of first terminals 112 are provided, a plurality of first lead-out wirings 114 are also provided.

A conductor layer 180 may be formed on the first lead-out wiring 114. The conductor layer 180 is made of a material having a lower resistance than that of the first lead-out wiring 114, for example, metal. The conductor layer 180 may have a single-layer structure or a multi-layer structure. When the conductor layer 180 has a single layer structure, the conductor layer 180 is formed by using, for example, Al or an Al alloy. When the conductor layer 180 has a multilayer structure, the conductor layer 180 is, for example, a first conductive layer which is a metal layer such as Mo or Mo alloy, or a second conductive layer which is a metal layer such as Al or Al alloy. In addition, it has a structure in which a third conductive layer, which is a metal layer such as Mo or Mo alloy, is laminated in this order. The thickness of the second conductive layer is, for example, 50 nm or more and 1000 nm or less. It is preferably 100 nm or less. The first conductive layer and the third conductive layer are thinner than the second conductive layer, for example, 30 nm or less, preferably 25 nm or less. The conductor layer 180 may or may not cover the first terminal 112.

The second insulating layer 150 is formed of, for example, a polyimide, epoxy, acrylic or novolak resin material (organic material) and has translucency with respect to visible light. The second insulating layer 150 is formed, for example, by mixing a photosensitive material with a resin material to be the second insulating layer 150, applying the resin material, and further exposing and developing the resin material. Further, the second insulating layer 150 may be formed by using an inkjet method or a screen printing method. A plurality of openings 152 and a plurality of openings 154 are formed in the second insulating layer 150. The plurality of second electrodes 130 extend parallel to each other in a direction intersecting with the first electrode 110 (for example, a direction orthogonal to each other: the X direction in FIG. 1). A partition wall 170, which will be described in detail later, extends between the plurality of second electrodes 130. The opening 152 is located at the intersection of the first electrode 110 and the second electrode 130 in a plan view. Specifically, the plurality of openings 152 are arranged in the direction in which the first electrode 110 extends (Y direction in FIG. 1). Further, the plurality of openings 152 are also arranged in the extending direction (X direction in FIG. 1) of the second electrode 130. Therefore, the plurality of openings 152 are arranged so as to form a matrix.

The opening 154 is located in a region overlapping the one end side of each of the plurality of second electrodes 130 in a plan view. Further, the openings 154 are arranged along one side of the matrix formed by the openings 152. When viewed in the direction along this one side (for example, the Y direction in FIG. 1, that is, the direction along the first electrode 110), the openings 154 are arranged at predetermined intervals. A part of the second lead-out wiring 134 is exposed from the opening 154. The second lead-out wiring 134 is connected to the second electrode 130 via the opening 154.

The second lead-out wiring 134 is a wiring that connects the second electrode 130 to the second terminal 132, and has a conductive layer made of the same material as the first electrode 110. This conductive layer is separated from the first electrode 110. One end side of the second lead-out wiring 134 is located below the opening 154, and the other end side of the second lead-out wiring 134 is drawn out to the outside of the second insulating layer 150. In the example shown in this figure, the other end side of the second lead-out wiring 134 is the second terminal 132. Then, the conductor layer 180 may be formed on the second lead-out wiring 134. The conductor layer 180 may or may not cover the second terminal 132. In the example shown in this figure, a plurality of second terminals 132 are provided. Therefore, a plurality of second lead-out wirings 134 are also provided.

An organic layer 120 is formed in a region overlapping the opening 152. The hole transport layer of the organic layer 120 is in contact with the first electrode 110, and the electron transport layer of the organic layer 120 is in contact with the second electrode 130. Therefore, the light emitting unit 140 is located in each region overlapping the opening 152.

In the examples shown in FIGS. 3 and 4, each layer constituting the organic layer 120 shows a case where each layer protrudes to the outside of the opening 152. Then, as shown in FIG. 1, the organic layer 120 may or may not be continuously formed between adjacent openings 152 in the direction in which the partition wall 170 extends. Good. However, as shown in FIG. 5, the organic layer 120 is not formed in the opening 154.

As shown in FIGS. 1 to 4, the second electrode 130 extends in the second direction (X direction in FIG. 1) intersecting the first direction. A partition wall 170 is formed between the adjacent second electrodes 130. The partition wall 170 extends parallel to the second electrode 130, that is, in the second direction. The base of the partition wall 170 is, for example, a second insulating layer 150. The partition wall 170 is a photosensitive resin such as a polyimide resin, and is formed into a desired pattern by exposure and development. The partition wall 170 may be made of a resin other than the polyimide resin, for example, an inorganic material such as an epoxy resin, an acrylic resin, or silicon dioxide.

The partition wall 170 has a trapezoidal cross section upside down (inverted trapezoidal shape). That is, the width of the upper surface of the partition wall 170 is larger than the width of the lower surface of the partition wall 170. Therefore, if the partition wall 170 is formed before the second electrode 130, the second electrode 130 is formed on one surface side of the substrate 100 by using a vapor deposition method or a sputtering method, so that the plurality of second electrodes 130 Can be formed collectively. The partition wall 170 also has a function of dividing the organic layer 120.

Further, a conductive member such as an FPC (Flexible Printed Circuit) is connected to the first terminal 112 and the second terminal 132. In the example shown in this figure, the first terminal 112 and the second terminal 132 are arranged along the same side (first side) of the substrate 100. Therefore, when the FPC is used as the conductive member, the first terminal 112 and the second terminal 132 can be connected to one FPC.

Further, the first insulating layer 156 is formed on the substrate 100. The first insulating layer 156 is formed by using an inorganic insulating material and covers at least a part of the first lead wiring 114. Specifically, when the second insulating layer 150 and the first insulating layer 156 are regarded as one insulating layer 157, the insulating layer 157 preferably covers all the first lead-out wirings 114. Further, in the examples shown in FIGS. 1 and 2, the insulating layer 157 also covers the second lead-out wiring 134. However, the insulating layer 157 does not have to cover a part of the wiring group including the plurality of first leader wirings 114 and the plurality of second leader wirings 134. For example, the insulating layer 157 may not cover the plurality of first lead-out wirings 114, or may not cover the plurality of second lead-out wirings 134. Further, the insulating layer 157 does not have to cover a part of the first lead-out wiring 114 and a part of the second lead-out wiring 134. However, in any case, the first insulating layer 156 covers the portion of the edge (end face) of the second insulating layer 150 that is located above the first lead-out wiring 114.

Further, the insulating layer 157 does not have to cover at least one end of the first lead-out wiring 114 and the second lead-out wiring 134. For example, in the example shown in this figure, the insulating layer 157 does not cover the end of the first lead-out wiring 114 opposite to the first electrode 110 (that is, the first terminal 112). Further, the insulating layer 157 does not cover the end portion (that is, the second terminal 132) of the second lead-out wiring 134 on the opposite side to the second electrode 130.

The light emitting device 10 further has a sealing film 160. The sealing film 160 is provided to seal the light emitting portion 140. The sealing film 160 is formed on the surface of the substrate 100 on which the light emitting portion 140 is formed, and covers the light emitting portion 140. The sealing film 160 is formed of, for example, an insulating material, more specifically, an inorganic material. The thickness of the sealing film 160 is preferably 300 nm or less. The thickness of the sealing film 160 is, for example, 50 nm or more. The sealing film 160 is formed by using an ALD (Atomic Layer Deposition) method or a CVD (Chemical Vapor Deposition) method. In particular, by using the ALD method, the step coverage of the sealing film 160 is increased. A second insulating layer 150 and a first insulating layer 156 are placed between the first lead-out wiring 114 and the sealing film 160, and at least one (preferably both) between the second drawer wiring 134 and the sealing film 160. At least one is located.

The first terminal 112 and the second terminal 132 are exposed from the sealing film 160. Therefore, a part of the edge of the sealing film 160 overlaps with the first lead-out wiring 114 and the second lead-out wiring 134.

In the example shown in FIG. 1, the portion of the edge of the sealing film 160 that overlaps with the first lead-out wiring 114 and the portion that overlaps with the second lead-out wiring 134 are both located on the first insulating layer 156. Neither the first lead-out wiring 114 nor the second lead-out wiring 134 is in direct contact with the sealing film 160. As a result, it is possible to avoid conduction between the first lead wiring 114, the second lead wiring 134, and between the first lead wiring 114 and the second lead wiring 134 via the sealing film 160.

The sealing film 160 covers the region to be the light emitting portion 140 and its surroundings. Therefore, the sum of the areas of the light emitting portion 140, the first insulating layer 156, and the second insulating layer 150 is 100% or more and 110% or less of the area of the region of the substrate 100 covered by the sealing film 160. ing.

FIG. 6 is an enlarged view of the area surrounded by the dotted line α in FIG. As shown in this figure, the sealing film 160 has a laminated structure in which a plurality of films are laminated. By doing so, the film stress generated in the sealing film 160 can be reduced as compared with the case where the sealing film 160 is formed by one film. All of the films constituting the sealing film 160 are made of an inorganic film. Then, these inorganic films are formed by using, for example, an ALD method or a CVD method.

The sealing film 160 has a structure in which at least three films are laminated. The thickness of each of these films is, for example, 3 nm or more and 10 nm or less. In the example shown in FIG. 6, the number of sealing layers constituting the sealing film 160 is four. However, the number of sealing layers constituting the sealing film 160 may be more than this (for example, 10 layers or more).

In the example shown in this figure, the sealing film 160 has a structure in which a first sealing film 162 made of a first material and a second sealing film 164 made of a second material are repeatedly laminated in this order. ing. The first material is an insulating material. The second material is also preferably an insulating material. The first material is, for example, aluminum oxide, and the second material is, for example, titanium oxide. Titanium oxide has insulating properties at room temperature, but is known to have conductivity by forming a thin film, for example. By forming the sealing layer in contact with the light emitting portion 140 with aluminum oxide, the moisture resistance of the sealing film 160 at room temperature can be enhanced. Further, by forming the second sealing film 164 covering the first sealing film 162 with titanium oxide, the moisture resistance of the sealing film 160 at a high temperature can be enhanced.

The first insulating layer 156 shown in FIGS. 1 to 3 is made of the same material as one of the first sealing film 162 and the second sealing film 164 (particularly preferably the same material as the bottom layer of the sealing film 160). And may be formed by the same method as these. However, the first insulating layer 156 is formed as a film different from the sealing film 160. The film thickness of the first insulating layer 156 is, for example, 50 nm or more and 200 nm or less, and is thinner than the film thickness of the second insulating layer 150 formed, for example, 0.3 μm or more and 1.5 μm or less. The film thickness of the first insulating layer 156 may be thicker than the film thickness of the first sealing film 162 and the film thickness of the second sealing film 164.

Next, a method of manufacturing the light emitting device 10 in the present embodiment will be described. First, the first electrode 110, the first terminal 112, the second terminal 132, the first lead-out wiring 114, and the second lead-out wiring 134 are formed on the substrate 100.

Next, a conductive film to be the conductor layer 180 is formed in a region including the first lead-out wiring 114 and the second lead-out wire 134. The conductive film is then made into a predetermined pattern using, for example, a photolithography method. As a result, the conductor layer 180 is formed.

Next, a photosensitive insulating layer to be the second insulating layer 150 is formed on the first electrode 110, and the insulating layer is exposed and developed. As a result, the second insulating layer 150 and the openings 152 and 154 are formed. Next, the first insulating layer 156 is formed by using, for example, a CVD method or an ALD method. At this time, the formed first insulating layer 156 is removed from the region where the first insulating layer 156 should not be formed by a shadow mask method, a photolithography method, a lift-off method, or the like. In the lift-off method, the lift-off layer is formed in advance before the formation of the first insulating layer. Then, an unnecessary portion of the first insulating layer 156 is removed by using the lift-off method.

Next, the partition wall 170 is formed on the second insulating layer 150. The method of forming the partition wall 170 is the same as the method of forming the second insulating layer 150. Next, the organic layer 120 and the second electrode 130 are formed.

Then, for example, using the ALD method, the first sealing film 162 and the second sealing film 164 are repeatedly formed in this order. As a result, the sealing film 160 is formed. After that, the portion of the sealing film 160 located on the first terminal 112 and the portion located on the second terminal 132 are removed. Removal of the sealing film 160 is performed, for example, by using a lift-off method. In this case, before forming the sealing film 160, a lift-off layer is formed in the region where the sealing film 160 should be removed.

FIG. 7 is an equivalent circuit diagram of the light emitting device 10 when the sealing film 160 is in contact with the first lead-out wiring 114 and the second lead-out wiring 134. When the light emitting unit 140 of the light emitting device 10 emits light, a voltage is applied between the first lead-out wiring 114 and the second lead-out wiring 134. On the other hand, although the sealing film 160 is formed of an insulating film, it has a structure in which a large number of thin sealing layers are laminated. Therefore, in the equivalent circuit shown in FIG. 7, the sealing film 160 has a configuration in which a capacitance and a resistor are connected in series between the first lead-out wiring 114 and the second lead-out wiring 134. Therefore, when the sealing film 160 is in contact with the first lead-out wiring 114 and the second lead-out wiring 134, a certain amount of current flows through the sealing film 160, and as a result, the sealing film 160 emits light when the light emitting portion 140 emits light. Charges are accumulated in the. This charge flows to the light emitting unit 140 when no voltage is applied between the first lead-out wiring 114 and the second lead-out wiring 134. As a result, the response speed when the light emitting unit 140 is turned off is reduced. Further, when the light emitting unit 140 is turned on, a part of the current flows through the sealing film 160. Therefore, the response speed when the light emitting unit 140 is turned on is also reduced.

On the other hand, according to the present embodiment, the second insulating layer 150 or the first insulating layer 156 is formed between at least one of the first leader wiring 114 and the second drawer wiring 134 and the sealing film 160. There is. Therefore, the magnitude of the resistance in the equivalent circuit diagram of FIG. 7 becomes large. Therefore, it becomes difficult for the current to flow through the sealing film 160, and as a result, the response speed of the light emitting unit 140 becomes difficult to decrease.

(Modification example)
FIG. 8 is a plan view showing the configuration of the light emitting device 10 according to the modified example, and corresponds to FIG. 1 in the embodiment. The light emitting device 10 shown in this modification has the same configuration as the light emitting device 10 according to the embodiment, except for the layout of the second insulating layer 150 and the layout of the first insulating layer 156.

Specifically, as compared with FIG. 1, the area of the portion of the second insulating layer 150 that covers the first lead-out wiring 114 and the second lead-out wiring 134 is larger, and instead, the area of the first insulating layer 156 is increased. The area is getting smaller. As a result, the area of the portion of the first lead-out wiring 114 covered by the second insulating layer 150 is larger than the area of the portion of the first lead-out wiring 114 covered by the first insulating layer 156. Similarly, the area of the portion of the second lead-out wiring 134 covered by the second insulating layer 150 is larger than the area of the portion of the second drawer wiring 134 covered by the first insulating layer 156.

Also in this modification, as in the embodiment, the current is less likely to flow through the sealing film 160, and as a result, the response speed of the light emitting unit 140 is less likely to decrease.

(Second embodiment)
FIG. 9 is a plan view showing the configuration of the light emitting device 10 according to the second embodiment. FIG. 10 is a diagram in which the second electrode 130 is removed from FIG. FIG. 11 is a diagram in which the organic layer 120, the second insulating layer 150, and the first insulating layer 156 are removed from FIG. FIG. 12 is a cross-sectional view taken along the line DD of FIG. The light emitting device 10 shown in this figure is a lighting device. Therefore, the light emitting portion 140 is formed in a region excluding the edge of the substrate 100.

Specifically, the first electrode 110 is formed on almost the entire surface of the substrate 100. The second insulating layer 150 covers the edge of the first electrode 110. The second insulating layer 150 prevents the first electrode 110 and the second electrode 130 from being short-circuited at the edge of the first electrode 110. Further, the organic layer 120 is formed in a region of the first electrode 110 surrounded by the second insulating layer 150. In other words, the second insulating layer 150 defines the light emitting unit 140. A plurality of auxiliary electrodes may be formed on the first electrode 110.

Further, a first lead-out wiring 114 is formed between the first terminal 112 and the first electrode 110, and a second lead-out wire 134 is formed at the end of the second terminal 132 on the first electrode 110 side. Has been done. The first terminal 112 and the first lead-out wiring 114 are integrated with the first electrode 110, and the second lead-out wiring 134 is integrated with the second terminal 132. However, the second terminal 132 and the second lead-out wiring 134 are separated from the first electrode 110.

The end of the first lead-out wiring 114 on the first terminal 112 side is covered with the first insulating layer 156, and the second lead-out wiring 134 is connected to the second electrode 130 (for example, the second lead-out). Except for the end of the wiring 134 on the side of the first electrode 110), it is covered with the first insulating layer 156. Also in the present embodiment, the portion of the edge of the sealing film 160 that overlaps with the first lead-out wiring 114 is located on the first insulating layer 156, and the edge of the sealing film 160 with the second lead-out wiring 134. The overlapping portion is also located on the first insulating layer 156. In other words, neither the first lead-out wiring 114 nor the second lead-out wiring 134 is in direct contact with the sealing film 160.

Also in this embodiment, the first insulating layer 156 is located between the first lead-out wiring 114 and the sealing film 160, and between the second drawer wiring 134 and the sealing film 160. Therefore, as in the first embodiment, it becomes difficult for the current to flow through the sealing film 160, and as a result, the response speed of the light emitting unit 140 becomes difficult to decrease.

Although the embodiments and examples have been described above with reference to the drawings, these are examples of the present invention, and various configurations other than the above can be adopted.

10 Light emitting device 100 Substrate 110 First electrode 112 First terminal (terminal)
114 1st lead-out wiring (wiring)
120 Organic layer 130 Second electrode 132 Second terminal (terminal)
134 Second lead-out wiring (wiring)
140 Light emitting part 150 Second insulating layer (structure)
156 First Insulation Layer 157 Insulation Layer 160 Encapsulating Membrane

Claims (1)

With the board
A light emitting portion formed on the substrate and having an organic layer,
Wiring formed on the substrate other than the region where the light emitting portion is formed and electrically connected to the light emitting portion, and
An insulating structure formed on at least a part of the wiring and
A first insulating layer made of an inorganic insulating material, which covers a portion of the edge of the structure located above the wiring,
A sealing film formed on the substrate and covering the structure, at least a part of the first insulating layer, and the light emitting portion.
With
A light emitting device in which the structure or the first insulating layer is located between the sealing film and the wiring.

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