JP2019192662A - Light-emitting device - Google Patents

Abstract

To make electric charge hard to be stacked on a sealing film when sealing an organic EL element by the sealing film.SOLUTION: A part of a second insulating layer 150 is one example of a structure. A light-emitting unit 140 is formed on a substrate 100, and includes an organic layer 120. A first lead-out wiring 114 is formed on the substrate 100, and electrically connected to the light-emitting unit 140. A part of the second insulating layer 150 is located on the first lead-out wiring 114. A first insulating layer 156 is composed of an inorganic insulation material, and covers a portion located on the first lead-out wiring 114 among edges of the second insulating layer 150. A sealing film 160 is formed on the substrate 100, and covers the second insulating layer 150, the first insulating layer 156, and the light-emitting unit 140. The second insulating layer 150 or the first insulating layer 156 is located between the sealing film 160 and the first lead-out wiring 114.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a light emitting device.

  In recent years, development of light-emitting devices having organic EL (Organic Electroluminescence) elements as light-emitting elements has been progressing. The organic EL element has a configuration in which an organic layer is sandwiched between a first electrode and a second electrode. Since the organic layer is vulnerable to moisture and oxygen, the organic EL element needs to be sealed. One method for sealing the organic EL element is to use a sealing film. For example, Patent Documents 1 and 2 describe using a laminated film in which a plurality of sealing layers are laminated as a sealing film.

  For example, Patent Document 1 discloses that the lower sealing layer is made of calcium oxide, alumina, silica, titania, indium oxide, tin oxide, silicon oxide, silicon nitride, or aluminum nitride, and the upper sealing layer is made of a material. It describes that an organic layer is used for the stop layer.

Patent Document 2 describes that the sealing film has a four-layer structure. Then, SiN, SiON, or SiO is used for the material of the lowermost sealing layer, amorphous silicon, SiO ₂ , or SiO is used for the upper sealing layer, and an organic material is used for the upper sealing layer. The use of SiN, SiON, or SiO for the upper sealing layer is described.

JP 2012-238611 A JP 2014-179278 A

  When the organic EL element is sealed using the sealing film, the sealing film is in contact with both the first electrode and the second electrode. As a result of the study by the present inventors, when the sealing film has a laminated structure of a conductive film and an insulating film (particularly when this laminated structure is repeatedly laminated), the capacitive element in which the sealing film has resistance. Was found to function as. If such a capacitive element exists, the light emission quality of the light emitting device and the inspection of the light emitting device are affected. Here, when a voltage is applied between the first electrode and the second electrode in order to operate the organic EL element, the timing at which the organic EL element emits light is delayed due to accumulation of charge in the sealing film. When no voltage is applied between the first electrode and the second electrode to stop the organic EL element, the charge accumulated in the sealing film flows toward the organic EL element, and the light emission of the organic EL element stops. Will be delayed.

  As a problem to be solved by the present invention, for example, when an organic EL element is sealed with a sealing film, it is difficult to accumulate charges in the sealing film.

The invention according to claim 1 is a substrate;
A light emitting part formed on the substrate and having an organic layer;
A wiring formed on the substrate other than the region where the light emitting unit is formed, and electrically connected to the light emitting unit;
An insulating structure formed on at least a part of the wiring;
Covering a portion of the edge of the structure located on the wiring, a first insulating layer made of an inorganic insulating material;
A sealing film formed on the substrate and covering the structure, at least a part of the first insulating layer, and the light emitting unit;
With
In the light emitting device, the structure or the first insulating layer is located between the sealing film and the wiring.

It is a top view of the light-emitting device concerning a 1st embodiment. It is the figure which removed the partition, the 2nd electrode, the organic layer, the 1st insulating layer, and the 2nd insulating layer from FIG. It is AA sectional drawing of FIG. It is BB sectional drawing of FIG. It is CC sectional drawing of FIG. It is the figure which expanded the area | region enclosed with the dotted line (alpha) of FIG. It is an equivalent circuit diagram of the light-emitting device when the sealing film is in contact with the first lead wiring and the second lead wiring. It is a top view which shows the structure of the light-emitting device which concerns on a modification. It is a top view which shows the structure of the light-emitting device which concerns on 2nd Embodiment. It is the figure which removed the 2nd electrode from FIG. It is the figure which removed the organic layer, the 2nd insulating layer, and the 1st insulating layer from the figure. It is DD sectional drawing of FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

(First embodiment)
FIG. 1 is a plan view of a light emitting device 10 according to the first embodiment. FIG. 2 is a diagram in which the partition 170, the second electrode 130, the organic layer 120, the first insulating layer 156, and the second insulating layer 150 are removed from FIG. 3 is a cross-sectional view taken along line AA of FIG. 1, FIG. 4 is a cross-sectional view taken along line BB of FIG. 1, and FIG. 5 is a cross-sectional view taken along line CC of FIG. 1 and 2, the sealing film 160 is indicated by a dotted line for explanation.

  The light emitting device 10 according to the embodiment includes a substrate 100, a light emitting unit 140, a first extraction wiring (wiring) 114, a second insulating layer 150, a first insulating layer 156, and a sealing film 160. A part of the second insulating layer 150 is an example of a structure. The light emitting unit 140 is formed on the substrate 100 and has an organic layer 120. The first lead-out wiring 114 is formed outside the region where the light emitting unit 140 is formed in the substrate 100 and is electrically connected to the light emitting unit 140. A part of the second insulating layer 150 is located on the first lead wiring 114. The first insulating layer 156 is made of an inorganic insulating material and covers a portion of the edge of the second insulating layer 150 that is located on the first lead wiring 114. The sealing film 160 is formed on the substrate 100 and covers the second insulating layer 150, at least part of the first insulating layer 156, and the light emitting unit 140. The second insulating layer 150 or the first insulating layer 156 is located between the sealing film 160 and the first lead wiring 114. Details will be described below.

  In the example shown in the figure, the light-emitting device 10 is a display device, and includes a substrate 100, a first electrode 110, a plurality of first terminals 112 (terminals), a plurality of second terminals 132 (terminals), a light-emitting unit 140, a second Insulating layer 150, a plurality of openings 152, a plurality of openings 154, a first insulating layer 156, a plurality of first lead wires 114 (wiring), an organic layer 120, a second electrode 130, and a plurality of second lead wires 134 (wiring) , And a plurality of partition walls 170.

When the light-emitting device 10 is a bottom emission type described later, the substrate 100 is formed of a light-transmitting material such as glass or a light-transmitting resin. However, when the light emitting device 10 is a top emission type described later, the substrate 100 may be formed of a material that does not have translucency. The substrate 100 is, for example, a polygon such as a rectangle. The substrate 100 may have flexibility. In the case where the substrate 100 has flexibility, the thickness of the substrate 100 is, for example, not less than 10 μm and not more than 1000 μm. In particular, when the substrate 100 is glass, the thickness of the substrate 100 is, for example, 200 μm or less. When the substrate 100 is a resin, the substrate 100 is formed using, for example, PEN (polyethylene naphthalate), PES (polyethersulfone), PET (polyethylene terephthalate), or polyimide. When the substrate 100 is a resin, an inorganic barrier film such as SiN _x or SiON is formed on at least one surface (preferably both surfaces) of the substrate 100 in order to suppress moisture from permeating the substrate 100. .

  The light emitting unit 140 has an organic EL element. This organic EL element has a configuration in which a first electrode 110, an organic layer 120, and a second electrode 130 are laminated in this order. The light emitting unit 140 is provided for each pixel of the display device.

  The first electrode 110 is a transparent electrode having optical transparency. The transparent conductive material constituting the transparent electrode is a metal-containing material, for example, a metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide), or ZnO (Zinc Oxide). is there. The thickness of the first electrode 110 is, for example, not less than 10 nm and not more than 500 nm. The first electrode 110 is formed using, for example, a sputtering method or a vapor deposition method. The first electrode 110 may be a carbon nanotube or a conductive organic material such as PEDOT / PSS.

  The organic layer 120 has a light emitting layer. The organic layer 120 has a configuration in which, for example, a hole injection layer, a light emitting layer, and an electron injection layer are stacked. A hole transport layer may be formed between the hole injection layer and the light emitting layer. In addition, an electron transport layer may be formed between the light emitting layer and the electron injection layer. The organic layer 120 may be formed by a vapor deposition method. In addition, at least one layer of the organic layer 120, for example, a layer in contact with the first electrode 110, may be formed by a coating method such as an inkjet method, a printing method, or a spray method. In this case, the remaining layers of the organic layer 120 are formed by vapor deposition. Moreover, all the layers of the organic layer 120 may be formed using the apply | coating method.

  The second electrode 130 is made of, for example, a metal selected from the first group consisting of Al, Au, Ag, Pt, Mg, Sn, Zn, and In, or an alloy of a metal selected from the first group. Contains a metal layer. In this case, the second electrode 130 has a light shielding property. The thickness of the second electrode 130 is, for example, not less than 10 nm and not more than 500 nm. However, the second electrode 130 may be formed using the material exemplified as the material of the first electrode 110. The second electrode 130 is formed using, for example, a sputtering method or a vapor deposition method.

  Note that the materials of the first electrode 110 and the second electrode 130 described above are examples in the case where light is transmitted through the substrate 100 (for example, a bottom emission type in the light emitting device 10). On the other hand, there is a case where light passes through the side opposite to the substrate 100 (for example, a top emission type in the light emitting device 10). This top emission type includes two types of laminated structures, a reverse product type and a forward product type. In the reverse product type, the material of the first electrode 110 and the material of the second electrode 130 are opposite to those of the bottom emission type. That is, the material of the second electrode 130 is used as the material of the first electrode 110, and the material of the first electrode 110 is used as the material of the second electrode 130. In the other stacking type, the material of the first electrode 110 is formed on the material of the second electrode 130 described above, the organic layer 120 is further formed thereon, and the second electrode 130 is further formed thinly thereon. Thus, the light is extracted from the side opposite to the substrate 100. The light emitting device 10 according to the present embodiment may be of any structure of a bottom emission type and the above two types of top emission types.

  The first electrode 110 extends in a line shape in the first direction (Y direction in FIG. 1). The end portion of the first electrode 110 is connected to the first lead wiring 114. The first lead wiring 114 has a conductive layer made of the same material as the first electrode 110. This conductive layer is integrated with the first electrode 110. In the example shown in this drawing, the end of the first lead-out wiring 114 is the first terminal 112. Further, since a plurality of first terminals 112 are provided, a plurality of first lead wires 114 are also provided.

  A conductor layer 180 may be formed on the first lead wiring 114. The conductor layer 180 is made of a material having a lower resistance than that of the first lead wiring 114, for example, a metal. The conductor layer 180 may have a single layer structure or a multilayer structure. When the conductor layer 180 has a single layer structure, the conductor layer 180 is formed using, for example, Al or an Al alloy. When the conductor layer 180 has a multilayer structure, the conductor layer 180 is, for example, a first conductive layer that is a metal layer such as Mo or Mo alloy, a second conductive layer that is a metal layer such as Al or Al alloy, And it has the structure which laminated | stacked the 3rd conductive layer which is metal layers, such as Mo or Mo alloy, in this order. The thickness of the second conductive layer is, for example, not less than 50 nm and not more than 1000 nm. Preferably it is 100 nm or less. The first conductive layer and the third conductive layer are thinner than the second conductive layer, for example, 30 nm or less, preferably 25 nm or less. Note that the conductor layer 180 may or may not cover the first terminal 112.

  The second insulating layer 150 is made of, for example, polyimide, epoxy, acrylic, or a novolac resin material (organic material), and has a light-transmitting property with respect to visible light. The second insulating layer 150 is formed, for example, by mixing a photosensitive material into a resin material to be the second insulating layer 150, applying the resin material, and further exposing and developing the resin material. In addition, the second insulating layer 150 may be formed using an inkjet method or a screen printing method. A plurality of openings 152 and a plurality of openings 154 are formed in the second insulating layer 150. The plurality of second electrodes 130 extend in parallel to each other in a direction intersecting the first electrode 110 (for example, a direction orthogonal to the X direction in FIG. 1). A partition wall 170, which will be described in detail later, extends between the plurality of second electrodes 130. The opening 152 is located at the intersection of the first electrode 110 and the second electrode 130 in plan view. Specifically, the plurality of openings 152 are arranged in the direction in which the first electrode 110 extends (the Y direction in FIG. 1). The plurality of openings 152 are also arranged in the extending direction of the second electrode 130 (X direction in FIG. 1). For this reason, the plurality of openings 152 are arranged to form a matrix.

  The opening 154 is located in a region overlapping with one end side of each of the plurality of second electrodes 130 in plan view. The openings 154 are arranged along one side of the matrix formed by the openings 152. When viewed in a direction along this one side (for example, the Y direction in FIG. 1, ie, the direction along the first electrode 110), the openings 154 are arranged at a predetermined interval. A part of the second lead wiring 134 is exposed from the opening 154. The second lead wiring 134 is connected to the second electrode 130 through the opening 154.

  The second lead wire 134 is a wire that connects the second electrode 130 to the second terminal 132, and has a conductive layer made of the same material as the first electrode 110. This conductive layer is separated from the first electrode 110. One end side of the second lead wire 134 is located below the opening 154, and the other end side of the second lead wire 134 is drawn to the outside of the second insulating layer 150. In the example shown in the figure, the other end side of the second lead wiring 134 is a second terminal 132. A conductor layer 180 may be formed on the second lead wiring 134. The conductor layer 180 may or may not cover the second terminal 132. In the example shown in this figure, a plurality of second terminals 132 are provided. For this reason, a plurality of second lead wires 134 are also provided.

  In the region overlapping with the opening 152, the organic layer 120 is formed. The hole transport layer of the organic layer 120 is in contact with the first electrode 110, and the electron transport layer of the organic layer 120 is in contact with the second electrode 130. For this reason, the light emitting part 140 is located in each of the regions overlapping with the opening 152.

  In the example shown in FIGS. 3 and 4, each layer constituting the organic layer 120 is shown to protrude to the outside of the opening 152. As shown in FIG. 1, the organic layer 120 may be formed continuously between adjacent openings 152 in the direction in which the partition 170 extends, or may not be formed continuously. Good. However, as shown in FIG. 5, the organic layer 120 is not formed in the opening 154.

  As shown in FIGS. 1 to 4, the second electrode 130 extends in a second direction (X direction in FIG. 1) that intersects the first direction. A partition wall 170 is formed between the adjacent second electrodes 130. The partition wall 170 extends in parallel to the second electrode 130, that is, in the second direction. The base of the partition 170 is, for example, the second insulating layer 150. The partition 170 is, for example, a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed. The partition wall 170 may be made of a resin other than a polyimide resin, for example, an inorganic material such as an epoxy resin, an acrylic resin, or silicon dioxide.

  The partition wall 170 has a trapezoidal cross-sectional shape (reverse trapezoidal shape). That is, the width of the upper surface of the partition wall 170 is larger than the width of the lower surface of the partition wall 170. Therefore, if the partition wall 170 is formed before the second electrode 130, the second electrode 130 is formed on one surface side of the substrate 100 by using an evaporation method or a sputtering method. Can be formed collectively. The partition wall 170 also has a function of dividing the organic layer 120.

  In addition, a conductive member such as an FPC (Flexible Printed Circuit) is connected to the first terminal 112 and the second terminal 132. In the example shown in this drawing, the first terminal 112 and the second terminal 132 are arranged along the same side (first side) of the substrate 100. For this reason, when FPC is used as the conductive member, the first terminal 112 and the second terminal 132 can be connected to one FPC.

  A first insulating layer 156 is formed on the substrate 100. The first insulating layer 156 is formed using an inorganic insulating material and covers at least a part of at least a part of the first extraction wiring 114. Specifically, when the second insulating layer 150 and the first insulating layer 156 are regarded as one insulating layer 157, the insulating layer 157 preferably covers all the first lead wirings 114. In the example shown in FIGS. 1 and 2, the insulating layer 157 also covers the second lead wiring 134. However, the insulating layer 157 may not cover a part of the wiring group including the plurality of first extraction wirings 114 and the plurality of second extraction wirings 134. For example, the insulating layer 157 may not cover the plurality of first lead wires 114 or may not cover the plurality of second lead wires 134. Further, the insulating layer 157 may not cover some of the first extraction wirings 114 and some of the second extraction wirings 134. However, in any case, the first insulating layer 156 covers a portion of the edge (end surface) of the second insulating layer 150 located above the first lead wiring 114.

  Further, the insulating layer 157 may not cover at least one end of the first lead wiring 114 and the second lead wiring 134. For example, in the example shown in this drawing, the insulating layer 157 does not cover the end portion (that is, the first terminal 112) on the opposite side of the first extraction wiring 114 from the first electrode 110. Further, the insulating layer 157 does not cover the end portion (that is, the second terminal 132) of the second lead wiring 134 on the side opposite to the second electrode 130.

  The light emitting device 10 further has a sealing film 160. The sealing film 160 is provided to seal the light emitting unit 140. The sealing film 160 is formed on the surface of the substrate 100 where the light emitting unit 140 is formed, and covers the light emitting unit 140. The sealing film 160 is made of, for example, an insulating material, more specifically, an inorganic material. The thickness of the sealing film 160 is preferably 300 nm or less. Moreover, the thickness of the sealing film 160 is, for example, 50 nm or more. The sealing film 160 is formed using an ALD (Atomic Layer Deposition) method or a CVD (Chemical Vapor Deposition) method. In particular, by using the ALD method, the step coverage of the sealing film 160 is increased. The second insulating layer 150 and the first insulating layer 156 are provided between the first lead wiring 114 and the sealing film 160 and at least one (preferably both) between the second lead wiring 134 and the sealing film 160. At least one is located.

  The first terminal 112 and the second terminal 132 are exposed from the sealing film 160. For this reason, a part of the edge of the sealing film 160 overlaps the first extraction wiring 114 and the second extraction wiring 134.

  In the example shown in FIG. 1, the portion of the edge of the sealing film 160 that overlaps the first lead wiring 114 and the portion that overlaps the second lead wiring 134 are both located on the first insulating layer 156. Further, neither the first lead wiring 114 nor the second lead wiring 134 is in direct contact with the sealing film 160. Accordingly, it is possible to avoid conduction between the first lead wires 114 and the second lead wires 134 and between the first lead wires 114 and the second lead wires 134 through the sealing film 160.

  Note that the sealing film 160 covers a region to be the light emitting portion 140 and its periphery. Therefore, the sum of the areas of the light emitting unit 140, the first insulating layer 156, and the second insulating layer 150 is 100% or more and 110% or less of the area of the substrate 100 covered with the sealing film 160. ing.

  FIG. 6 is an enlarged view of a region surrounded by a dotted line α in FIG. As shown in this figure, the sealing film 160 has a laminated structure in which a plurality of films are laminated. By doing in this way, the film | membrane stress which arises in the sealing film 160 can be made small compared with the case where the sealing film 160 is formed with one film. Note that any film constituting the sealing film 160 is formed of an inorganic film. These inorganic films are formed using, for example, an ALD method or a CVD method.

  The sealing film 160 has a configuration in which at least three films are stacked. The thickness of these films is, for example, 3 nm or more and 10 nm or less. In the example shown in FIG. 6, the number of sealing layers constituting the sealing film 160 is four. However, the number of sealing layers constituting the sealing film 160 may be more than this (for example, 10 or more layers).

  In the example shown in this figure, the sealing film 160 has a configuration in which a first sealing film 162 made of a first material and a second sealing film 164 made of a second material are repeatedly laminated in this order. ing. The first material is an insulating material. The second material is also preferably an insulating material. The first material is, for example, aluminum oxide, and the second material is, for example, titanium oxide. Titanium oxide has an insulating property at room temperature, but is known to have conductivity by forming a thin film, for example. By forming the sealing layer in contact with the light emitting portion 140 with aluminum oxide, the moisture resistance of the sealing film 160 at room temperature can be improved. Further, by forming the second sealing film 164 covering the first sealing film 162 with titanium oxide, the moisture resistance of the sealing film 160 at a high temperature can be improved.

  The first insulating layer 156 shown in FIGS. 1 to 3 is the same material as one of the first sealing film 162 and the second sealing film 164 (particularly preferably, the same material as the lowermost layer of the sealing film 160). You may form using these and the method similar to these. However, the first insulating layer 156 is formed as a film different from the sealing film 160. The film thickness of the first insulating layer 156 is, for example, 50 nm or more and 200 nm or less, and is thinner than the film thickness of the second insulating layer 150 formed, for example, by 0.3 μm or more and 1.5 μm or less. Note that the thickness of the first insulating layer 156 may be larger than the thickness of the first sealing film 162 and the thickness of the second sealing film 164.

  Next, a method for manufacturing the light emitting device 10 in the present embodiment will be described. First, the first electrode 110, the first terminal 112, the second terminal 132, the first lead wire 114, and the second lead wire 134 are formed on the substrate 100.

  Next, a conductive film to be the conductor layer 180 is formed in a region including the first lead wiring 114 and the second lead wiring 134. Next, the conductive film is formed into a predetermined pattern using, for example, a photolithography method. Thereby, the conductor layer 180 is formed.

  Next, a photosensitive insulating layer to be the second insulating layer 150 is formed on the first electrode 110, and this insulating layer is exposed and developed. Thereby, the second insulating layer 150 and the openings 152 and 154 are formed. Next, the first insulating layer 156 is formed using, for example, a CVD method or an ALD method. At this time, in the region where the first insulating layer 156 is not to be formed, the formed first insulating layer 156 is removed by a shadow mask method, a photolithography method, a lift-off method, or the like. In the lift-off method, a lift-off layer is formed in advance before forming the first insulating layer. Then, unnecessary portions of the first insulating layer 156 are removed using a lift-off method.

  Next, a partition wall 170 is formed on the second insulating layer 150. The method for forming the partition 170 is the same as the method for forming the second insulating layer 150. Next, the organic layer 120 and the second electrode 130 are formed.

  Next, the first sealing film 162 and the second sealing film 164 are repeatedly formed in this order by using, for example, an ALD method. Thereby, the sealing film 160 is formed. Thereafter, a portion of the sealing film 160 located on the first terminal 112 and a portion located on the second terminal 132 are removed. The removal of the sealing film 160 is performed using, for example, a lift-off method. In this case, before the sealing film 160 is formed, a lift-off layer is formed in a region where the sealing film 160 is to be removed.

  FIG. 7 is an equivalent circuit diagram of the light emitting device 10 when the sealing film 160 is in contact with the first extraction wiring 114 and the second extraction wiring 134. When the light emitting unit 140 of the light emitting device 10 is caused to emit light, a voltage is applied between the first lead wire 114 and the second lead wire 134. On the other hand, the sealing film 160 is formed of an insulating film, but has a structure in which a large number of thin sealing layers are stacked. Therefore, in the equivalent circuit shown in FIG. 7, the sealing film 160 has a configuration in which a capacitor and a resistor are connected in series between the first extraction wiring 114 and the second extraction wiring 134. For this reason, when the sealing film 160 is in contact with the first extraction wiring 114 and the second extraction wiring 134, a certain amount of current flows through the sealing film 160, and as a result, when the light emitting unit 140 emits light, the sealing film 160. The charge is accumulated in the. This electric charge flows into the light emitting unit 140 when a voltage is no longer applied between the first extraction wiring 114 and the second extraction wiring 134. As a result, the response speed when turning off the light emitting unit 140 decreases. Further, when the light emitting unit 140 is turned on, part of the current flows through the sealing film 160. For this reason, the response speed when the light emitting unit 140 is turned on also decreases.

  On the other hand, according to this embodiment, the second insulating layer 150 or the first insulating layer 156 is formed between at least one of the first lead wiring 114 and the second lead wiring 134 and the sealing film 160. Yes. For this reason, the magnitude of the resistance in the equivalent circuit diagram of FIG. 7 increases. Therefore, it is difficult for current to flow through the sealing film 160, and as a result, the response speed of the light emitting unit 140 is unlikely to decrease.

(Modification)
FIG. 8 is a plan view showing a configuration of a light emitting device 10 according to a modification, and corresponds to FIG. 1 in the embodiment. The light emitting device 10 shown in this modification has the same configuration as the light emitting device 10 according to the embodiment except for the layout of the second insulating layer 150 and the layout of the first insulating layer 156.

  Specifically, compared to FIG. 1, the area of the second insulating layer 150 covering the first lead wiring 114 and the second lead wiring 134 is increased, and instead of the first insulating layer 156, The area is getting smaller. As a result, the area of the portion of the first lead wiring 114 covered by the second insulating layer 150 is larger than the area of the portion of the first lead wiring 114 covered by the first insulating layer 156. Similarly, the area of the portion of the second lead wiring 134 that is covered with the second insulating layer 150 is larger than the area of the portion of the second lead wiring 134 that is covered with the first insulating layer 156.

  Also according to the present modification, as in the embodiment, it is difficult for current to flow through the sealing film 160, and as a result, the response speed of the light emitting unit 140 is unlikely to decrease.

(Second Embodiment)
FIG. 9 is a plan view showing the configuration of the light emitting device 10 according to the second embodiment. FIG. 10 is a diagram in which the second electrode 130 is removed from FIG. 9. 11 is a diagram in which the organic layer 120, the second insulating layer 150, and the first insulating layer 156 are removed from FIG. 12 is a cross-sectional view taken along the line DD of FIG. The light emitting device 10 shown in this figure is a lighting device. For this reason, the light emitting unit 140 is formed in a region excluding the edge of the substrate 100.

  Specifically, the first electrode 110 is formed on almost the entire surface of the substrate 100. The second insulating layer 150 covers the edge of the first electrode 110. The second insulating layer 150 prevents the first electrode 110 and the second electrode 130 from being short-circuited at the edge of the first electrode 110. The organic layer 120 is formed in a region surrounded by the second insulating layer 150 in the first electrode 110. In other words, the second insulating layer 150 defines the light emitting unit 140. A plurality of auxiliary electrodes may be formed on the first electrode 110.

  A first lead wire 114 is formed between the first terminal 112 and the first electrode 110, and a second lead wire 134 is formed at the end of the second terminal 132 on the first electrode 110 side. Has been. The first terminal 112 and the first lead wiring 114 are integrated with the first electrode 110, and the second lead wiring 134 is integrated with the second terminal 132. However, the second terminal 132 and the second lead wiring 134 are separated from the first electrode 110.

  The end of the first lead wire 114 on the first terminal 112 side is covered with the first insulating layer 156, and the second lead wire 134 is connected to the second electrode 130 (for example, the second lead wire). The wiring 134 is covered with the first insulating layer 156 except for the end of the wiring 134 on the first electrode 110 side. Also in the present embodiment, the portion of the edge of the sealing film 160 that overlaps the first extraction wiring 114 is located on the first insulating layer 156, and the second extraction wiring 134 of the edge of the sealing film 160 is connected to the first extraction wiring 114. The overlapping portion is also located on the first insulating layer 156. In other words, neither the first lead wiring 114 nor the second lead wiring 134 is in direct contact with the sealing film 160.

  Also in this embodiment, the first insulating layer 156 is located between the first extraction wiring 114 and the sealing film 160 and between the second extraction wiring 134 and the sealing film 160. For this reason, as in the first embodiment, it is difficult for current to flow through the sealing film 160, and as a result, the response speed of the light emitting unit 140 is unlikely to decrease.

  As mentioned above, although embodiment and the Example were described with reference to drawings, these are illustrations of this invention and can also employ | adopt various structures other than the above.

10 light emitting device 100 substrate 110 first electrode 112 first terminal (terminal)
114 First lead wiring (wiring)
120 Organic layer 130 Second electrode 132 Second terminal (terminal)
134 Second lead wiring (wiring)
140 Light Emitting Unit 150 Second Insulating Layer (Structure)
156 First insulating layer 157 Insulating layer 160 Sealing film

Claims (1)

A substrate,
A light emitting part formed on the substrate and having an organic layer;
A wiring formed on the substrate other than the region where the light emitting unit is formed, and electrically connected to the light emitting unit;
An insulating structure formed on at least a part of the wiring;
Covering a portion of the edge of the structure located on the wiring, a first insulating layer made of an inorganic insulating material;
A sealing film formed on the substrate and covering the structure, at least a part of the first insulating layer, and the light emitting unit;
With
The light emitting device in which the structure or the first insulating layer is located between the sealing film and the wiring.

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