JP2021075779A - 積層膜構造体及びその製造方法 - Google Patents

積層膜構造体及びその製造方法 Download PDF

Info

Publication number
JP2021075779A
JP2021075779A JP2020140980A JP2020140980A JP2021075779A JP 2021075779 A JP2021075779 A JP 2021075779A JP 2020140980 A JP2020140980 A JP 2020140980A JP 2020140980 A JP2020140980 A JP 2020140980A JP 2021075779 A JP2021075779 A JP 2021075779A
Authority
JP
Japan
Prior art keywords
thin film
film
substrate
nitride
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2020140980A
Other languages
English (en)
Japanese (ja)
Inventor
裕也 土田
Hironari Tsuchida
裕也 土田
祐也 末本
Yuya SUEMOTO
祐也 末本
義弘 上岡
Yoshihiro Kamioka
義弘 上岡
雅実 召田
Masami Meshida
雅実 召田
倉持 豪人
Toshihito Kuramochi
豪人 倉持
貴弘 長田
Takahiro Osada
貴弘 長田
リウエン サン
li-wen Sang
リウエン サン
知京 豊裕
Toyohiro Chikyo
豊裕 知京
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
Tosoh Corp
Original Assignee
National Institute for Materials Science
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Materials Science, Tosoh Corp filed Critical National Institute for Materials Science
Priority to PCT/JP2020/040216 priority Critical patent/WO2021085411A1/ja
Priority to CN202080075909.7A priority patent/CN114651084A/zh
Priority to EP20883221.2A priority patent/EP4052899A4/en
Priority to KR1020227015088A priority patent/KR20220092518A/ko
Priority to TW109137626A priority patent/TW202118884A/zh
Publication of JP2021075779A publication Critical patent/JP2021075779A/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Physical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2020140980A 2019-10-31 2020-08-24 積層膜構造体及びその製造方法 Pending JP2021075779A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/JP2020/040216 WO2021085411A1 (ja) 2019-10-31 2020-10-27 積層膜構造体及びその製造方法
CN202080075909.7A CN114651084A (zh) 2019-10-31 2020-10-27 层叠膜结构体和其制造方法
EP20883221.2A EP4052899A4 (en) 2019-10-31 2020-10-27 MULTI-LAYER FILM STRUCTURE AND METHOD OF MAKING THEREOF
KR1020227015088A KR20220092518A (ko) 2019-10-31 2020-10-27 적층막 구조체 및 그 제조 방법
TW109137626A TW202118884A (zh) 2019-10-31 2020-10-29 積層膜結構體、半導體元件、電子設備、及積層膜結構體的製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019198886 2019-10-31
JP2019198886 2019-10-31

Publications (1)

Publication Number Publication Date
JP2021075779A true JP2021075779A (ja) 2021-05-20

Family

ID=75899260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020140980A Pending JP2021075779A (ja) 2019-10-31 2020-08-24 積層膜構造体及びその製造方法

Country Status (2)

Country Link
JP (1) JP2021075779A (zh)
TW (1) TW202118884A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023058706A1 (ja) 2021-10-08 2023-04-13 東ソー株式会社 積層体及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023058706A1 (ja) 2021-10-08 2023-04-13 東ソー株式会社 積層体及びその製造方法

Also Published As

Publication number Publication date
TW202118884A (zh) 2021-05-16

Similar Documents

Publication Publication Date Title
JP5451280B2 (ja) ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
US7811902B2 (en) Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based light emitting diode using the same
TWI524552B (zh) 具有AlzGa-zN層的半導體晶圓及其製造方法
WO2009090821A1 (ja) Al系III族窒化物単結晶層を有する積層体の製造方法、該製法で製造される積層体、該積層体を用いたAl系III族窒化物単結晶基板の製造方法、および、窒化アルミニウム単結晶基板
KR101669259B1 (ko) 적층체의 제조방법
US8124498B2 (en) Method of manufacturing group III nitride semiconductor layer bonded substrate
US20090072239A1 (en) Gallium oxide single crystal composite, process for producing the same, and process for producing nitride semiconductor film utilizing gallium oxide single crystal composite
Li et al. Nucleation layer design for growth of a high-quality AlN epitaxial film on a Si (111) substrate
JP2004111848A (ja) サファイア基板とそれを用いたエピタキシャル基板およびその製造方法
JP2021075779A (ja) 積層膜構造体及びその製造方法
WO2009119159A1 (ja) 光デバイス用基板及びその製造方法
JP5439675B2 (ja) 窒化物半導体形成用基板及び窒化物半導体
WO2021085411A1 (ja) 積層膜構造体及びその製造方法
JP5129186B2 (ja) Iii族窒化物半導体層の製造方法
JP2004051446A (ja) 酸化物単結晶薄膜形成方法および半導体薄膜形成方法
Kidalov et al. Properties of cubic GaN films obtained by nitridation of porous GaAs (001)
JP2005203666A (ja) 化合物半導体デバイスの製造方法
US20240158954A1 (en) Multilayer film structure and method for producing same
WO2022215670A1 (ja) 積層膜構造体及びその製造方法
JP2010251743A (ja) Iii族窒化物半導体成長用基板、iii族窒化物半導体自立基板、iii族窒化物半導体素子、ならびに、これらの製造方法
JP6934473B2 (ja) Iii族窒化物半導体発光素子
JP2016533643A (ja) 半導体ウェハおよび半導体ウェハを製造するための方法
JP2022124012A (ja) 半導体基板及び窒化物半導体
JP5831763B2 (ja) 窒化物半導体自立基板の製造方法
Sato et al. Free‐standing GaN wafer by one‐stop HVPE with pit‐induced buffer layer

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200908

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230721