JP2021072393A - Bonding wire and semiconductor device - Google Patents

Bonding wire and semiconductor device Download PDF

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JP2021072393A
JP2021072393A JP2019199205A JP2019199205A JP2021072393A JP 2021072393 A JP2021072393 A JP 2021072393A JP 2019199205 A JP2019199205 A JP 2019199205A JP 2019199205 A JP2019199205 A JP 2019199205A JP 2021072393 A JP2021072393 A JP 2021072393A
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electrode
bonding
bonding wire
copper
wire
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JP7146719B2 (en
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長谷川　剛
Takeshi Hasegawa
剛 長谷川
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Tatsuta Electric Wire and Cable Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
    • H01L2224/48456—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

To provide a bonding wire and a semiconductor device which are superior in thermal shock resistance.SOLUTION: A bonding wire of the present invention comprises copper having a purity of 99.999 mass% or larger, in which a total content of phosphorus, sulfur and iron is less than 0.05 mass ppm, and a total content of phosphorus, sulfur, iron and silver is less than 0.30 mass ppm. A semiconductor device P of the invention comprises a bonding wire W for connecting a first electrode 10 and a second electrode 11. In the semiconductor device, the bonding wire W includes copper of 99.999 mass% or more in purity, and the ratio (R2/R1) of a copper crystal average grain diameter R2 in a secondary joining part 14 to a copper crystal average grain diameter R1 in a wire main body part 16 is 0.8 or larger.SELECTED DRAWING: Figure 1

Description

本発明は、ボンディングワイヤ及び半導体装置に関する。 The present invention relates to bonding wires and semiconductor devices.

半導体素子に設けられた第１電極と、リードフレームやプリント基板等の回路配線基板に設けられた第２電極とを接続する方法としてボールボンディング法が知られている。 A ball bonding method is known as a method of connecting a first electrode provided on a semiconductor element and a second electrode provided on a circuit wiring board such as a lead frame or a printed circuit board.

この方法は、まず、放電加熱等によりボンディングワイヤＷの先端にフリーエアボール（ＦＡＢ：Ｆｒｅｅ Ａｉｒ Ｂａｌｌ）を形成する。そして、形成したＦＡＢを荷重や超音波発振を加えつつ一方の電極（例えば、半導体素子１に設けられた第１電極１０）に圧着する1次接合を行う。1次接合により電極１０に１次接合部１２が形成される（図１参照）。 In this method, first, a free air ball (FAB: Free Air Ball) is formed at the tip of the bonding wire W by electric discharge heating or the like. Then, the formed FAB is subjected to primary bonding by crimping it to one electrode (for example, the first electrode 10 provided on the semiconductor element 1) while applying a load or ultrasonic oscillation. The primary junction 12 is formed on the electrode 10 by the primary junction (see FIG. 1).

その後、他方の電極（例えば、基板２に設けられた第２電極１１）にボンディングワイヤＷの外周面を荷重や超音波発振を加えつつ圧着する2次接合を行う。2次接合により、第２電極１１に２次接合部１４が形成される。これにより、第１電極１０と第２電極１１とをボンディングワイヤＷによって接続する。 After that, secondary bonding is performed in which the outer peripheral surface of the bonding wire W is crimped to the other electrode (for example, the second electrode 11 provided on the substrate 2) while applying a load or ultrasonic oscillation. By the secondary bonding, the secondary bonding portion 14 is formed on the second electrode 11. As a result, the first electrode 10 and the second electrode 11 are connected by the bonding wire W.

そして、ボンディングワイヤＷによって第１電極１０と第２電極１１とを接続した後、ボンディングワイヤＷで接続された電極１０，１１とともに半導体素子１を樹脂３で封止して、図１に示すような半導体装置Ｐを得る。 Then, after the first electrode 10 and the second electrode 11 are connected by the bonding wire W, the semiconductor element 1 is sealed with the resin 3 together with the electrodes 10 and 11 connected by the bonding wire W, and as shown in FIG. A semiconductor device P is obtained.

ところで、ボールボンディング法に用いられるボンディングワイヤは非常に細い。そのため、導電性が良く、加工性に優れた金属材料が用いられている。特に、化学的な安定性や大気中での取り扱いやすさから、従来は金（Ａｕ）製の金ボンディングワイヤが用いられている。しかし、金ボンディングワイヤは重量の９９％以上が金であるため非常に高価である。そこで、金に比べて安価な銅（Ｃｕ）製の銅ボンディングワイヤが提案されている。 By the way, the bonding wire used in the ball bonding method is very thin. Therefore, a metal material having good conductivity and excellent workability is used. In particular, a gold bonding wire made of gold (Au) has been conventionally used because of its chemical stability and ease of handling in the atmosphere. However, gold bonding wires are very expensive because more than 99% of their weight is gold. Therefore, a copper bonding wire made of copper (Cu), which is cheaper than gold, has been proposed.

下記特許文献１及び２には、接合強度を高めたり、ボールボンディングの際に半導体素子の損傷を抑えたりするため、高純度の銅からなる銅ボンディングワイヤを用いることが提案されている。 Patent Documents 1 and 2 below propose the use of a copper bonding wire made of high-purity copper in order to increase the bonding strength and suppress damage to the semiconductor element during ball bonding.

特開昭６１−２５１０６２号公報Japanese Unexamined Patent Publication No. 61-251062 特開昭６２−８９３４８号公報Japanese Unexamined Patent Publication No. 62-89348

近年、半導体装置では、より過酷な熱環境における使用に対する要求が高い。これに伴い、周囲温度の変化に対する耐性（耐熱衝撃性）が求められている。しかし、上記特許文献１及び２のような銅ボンディングワイヤでは、耐熱衝撃性に対する要求を充分に満足できない場合がある。 In recent years, semiconductor devices have been in high demand for use in more harsh thermal environments. Along with this, resistance to changes in ambient temperature (heat impact resistance) is required. However, copper bonding wires such as those in Patent Documents 1 and 2 may not sufficiently satisfy the requirements for thermal shock resistance.

本発明は、上記事情に鑑みてなされたものであり、耐熱衝撃性に優れた高純度の銅を主成分とするボンディングワイヤ及び半導体装置を提供することを目的とする。 The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a bonding wire and a semiconductor device containing high-purity copper as a main component, which has excellent thermal shock resistance.

本発明者は、鋭意研究を重ねた結果、周囲温度の変化によって銅ボンディングワイヤの２次接合部から破断しやすいことを見出した。そして、本発明者は、この破断が、2次接合時に荷重や超音波発振等の加工を受けた２次接合部と、加工を受けていない部分との結晶組織の差異に起因していることを見出した。 As a result of diligent research, the present inventor has found that the copper bonding wire is easily broken from the secondary joint due to a change in ambient temperature. The inventor of the present invention states that this fracture is caused by the difference in crystal structure between the secondary joint portion that has been processed by a load or ultrasonic oscillation during the secondary joint and the portion that has not been processed. I found.

つまり、２次接合部は、2次接合時に大きな加工を受けることで繊維状の金属組織（加工組織）となって、粒径の大きい金属組織（再結晶組織）を有する加工を受けていない部分と金属組織が異なりやすい。 That is, the secondary joint portion becomes a fibrous metal structure (processed structure) by undergoing a large process at the time of the secondary bond, and is a portion having a large particle size metal structure (recrystallized structure) and not undergoing processing. And the metal structure tends to be different.

半導体装置では、周囲温度が変化すると、第２電極が設けられたリードフレームと封止樹脂との熱膨張率の差によってボンディングワイヤＷに負荷がかかる。この時、ボンディングワイヤＷにかかる負荷は、上記のような繊維状の加工組織と粒径の大きい再結晶組織との境界が存在する場合（言い換えれば、大きな加工を受けた２次接合部と、その近傍で加工を受けなかった部分との銅結晶の粒径の差が大きい場合）、この境界部分に集中してボンディングワイヤＷを破断する。本発明者は、２次接合部とその近傍における銅結晶の粒径の差を小さく抑えることで耐熱衝撃性を向上することを見出し、本発明を完成させた。 In a semiconductor device, when the ambient temperature changes, a load is applied to the bonding wire W due to the difference in the coefficient of thermal expansion between the lead frame provided with the second electrode and the sealing resin. At this time, the load applied to the bonding wire W is when the boundary between the fibrous processed structure and the recrystallized structure having a large particle size as described above exists (in other words, the secondary joint portion that has undergone a large processing and the secondary bonding portion). When the difference in particle size of the copper crystal from the unprocessed portion is large in the vicinity thereof), the bonding wire W is broken by concentrating on this boundary portion. The present inventor has found that the thermal shock resistance is improved by suppressing the difference in particle size of copper crystals between the secondary junction and the vicinity thereof to be small, and completed the present invention.

本発明に係るボンディングワイヤは、リン、硫黄及び鉄の含有量の合計が０．０５質量ｐｐｍ未満であり、リン、硫黄、鉄及び銀の含有量の合計が０．３０質量ｐｐｍ未満である、純度が９９．９９９質量％以上の銅からなるものである。 The bonding wire according to the present invention has a total content of phosphorus, sulfur and iron of less than 0.05 mass ppm and a total content of phosphorus, sulfur, iron and silver of less than 0.30 mass ppm. It is made of copper having a purity of 99.999% by mass or more.

上記本発明のボンディングワイヤにおいて、リン、硫黄及び鉄の含有量の合計が０．０３質量ｐｐｍ未満であり、リン、硫黄、鉄及び銀の含有量の合計が０．２５質量ｐｐｍ未満であることが好ましい。 In the above-mentioned bonding wire of the present invention, the total content of phosphorus, sulfur and iron is less than 0.03 mass ppm, and the total content of phosphorus, sulfur, iron and silver is less than 0.25 mass ppm. Is preferable.

他の本発明に係る半導体装置は、第１電極を有する半導体素子と、第２電極を有する基板と、前記第１電極と前記第２電極とを接続するボンディングワイヤとを備える半導体装置において、前記ボンディングワイヤは、純度が９９．９９９質量％以上の銅からなり、前記第１電極及び前記第２電極のいずれか一方にフリーエアボールを圧着して形成された１次接合部と、他方に前記ボンディングワイヤの外周面を圧着して形成された２次接合部と、前記１次接合部と前記２次接合部との間に設けられたワイヤ本体部とを備え、前記ワイヤ本体部における銅結晶の平均粒径Ｒ１に対する前記２次接合部における銅結晶の平均粒径Ｒ２の比率（Ｒ２／Ｒ１）が０．８以上であるものである。 Another semiconductor device according to the present invention is a semiconductor device including a semiconductor element having a first electrode, a substrate having a second electrode, and a bonding wire connecting the first electrode and the second electrode. The bonding wire is made of copper having a purity of 99.999% by mass or more, and has a primary bonding portion formed by crimping a free air ball to either one of the first electrode and the second electrode, and the other. A secondary bonding portion formed by crimping the outer peripheral surface of the bonding wire and a wire main body portion provided between the primary bonding portion and the secondary bonding portion are provided, and a copper crystal in the wire main body portion is provided. The ratio (R2 / R1) of the average particle size R2 of the copper crystal in the secondary bonding portion to the average particle size R1 of the above is 0.8 or more.

上記本発明の半導体装置において、前記ボンディングワイヤが、リン、硫黄及び鉄の含有量の合計が０．０５質量ｐｐｍ未満であり、リン、硫黄、鉄及び銀の含有量の合計が０．３０質量ｐｐｍ未満であることが好ましい。 In the above-mentioned semiconductor device of the present invention, the bonding wire has a total content of phosphorus, sulfur and iron of less than 0.05 mass ppm and a total content of phosphorus, sulfur, iron and silver of 0.30 mass. It is preferably less than ppm.

本発明では、耐熱衝撃性に優れたボンディングワイヤ及び半導体装置が得られる。 In the present invention, a bonding wire and a semiconductor device having excellent thermal shock resistance can be obtained.

本発明の一実施形態に係る半導体装置におけるボンディングワイヤを拡大して示す図。FIG. 6 is an enlarged view showing a bonding wire in a semiconductor device according to an embodiment of the present invention. 図１の半導体装置の２次接合部の形成工程を示す断面図。FIG. 5 is a cross-sectional view showing a process of forming a secondary joint portion of the semiconductor device of FIG. 図１の半導体装置の２次接合部の形成工程を示す断面図。FIG. 5 is a cross-sectional view showing a process of forming a secondary joint portion of the semiconductor device of FIG. 図１の半導体装置の２次接合部近傍を拡大して示す平面図。FIG. 5 is an enlarged plan view showing the vicinity of the secondary junction of the semiconductor device of FIG. （ａ）は実施例１のボンディングワイヤを用いた半導体装置の２次接合部近傍の断面ＳＥＭ写真、（ｂ）は（ａ）の要部拡大図。(A) is a cross-sectional SEM photograph of the vicinity of the secondary junction of the semiconductor device using the bonding wire of Example 1, and (b) is an enlarged view of the main part of (a). （ａ）は比較例１のボンディングワイヤを用いた半導体装置の２次接合部近傍の断面ＳＥＭ写真、（ｂ）は（ａ）の要部拡大図。(A) is a cross-sectional SEM photograph of the vicinity of the secondary junction of the semiconductor device using the bonding wire of Comparative Example 1, and (b) is an enlarged view of the main part of (a).

以下、本発明の一実施形態に係る半導体装置Pについて図面を参照して説明する。 Hereinafter, the semiconductor device P according to the embodiment of the present invention will be described with reference to the drawings.

（１）半導体装置Ｐ
図１に例示する本実施形態の半導体装置Ｐは、例えば、パワーＩＣ、ＬＳＩ、トランジスタ、ＢＧＡ（Ball Grid Array package）、ＱＦＮ（Quad Flat Nonlead package）、ＬＥＤ（発光ダイオード）等のように、半導体素子１の第１電極１０と回路配線基板（リードフレーム、セラミック基板、プリント基板等）２の第２電極１１とが、ボンディングワイヤＷを用いたボールボンディング法によって接続されたものである。なお、半導体装置Ｐは、望ましい形態として、ボンディングワイヤＷで接続された第１電極１０及び第２電極１１とともに半導体素子１が樹脂３で封止されている。 (1) Semiconductor device P
The semiconductor device P of the present embodiment illustrated in FIG. 1 is a semiconductor such as a power IC, an LSI, a transistor, a BGA (Ball Grid Array package), a QFN (Quad Flat Nonlead package), an LED (light emitting diode), or the like. The first electrode 10 of the element 1 and the second electrode 11 of the circuit wiring board (lead frame, ceramic board, printed circuit board, etc.) 2 are connected by a ball bonding method using a bonding wire W. In the semiconductor device P, as a desirable form, the semiconductor element 1 is sealed with the resin 3 together with the first electrode 10 and the second electrode 11 connected by the bonding wire W.

ボンディングワイヤＷは、純度が９９．９９９質量％以上の銅からなる。ボンディングワイヤＷは、半導体素子１の第１電極１０と回路配線基板２の第２電極１１のいずれか一方の電極（例えば、第１電極１０）に形成された１次接合部１２と、他方の電極（例えば、第２電極１１）に形成された２次接合部１４と、１次接合部１２と２次接合部１４との間に設けられたワイヤ本体部１６とを備える。 The bonding wire W is made of copper having a purity of 99.999% by mass or more. The bonding wire W is a primary bonding portion 12 formed on one of the first electrode 10 of the semiconductor element 1 and the second electrode 11 of the circuit wiring substrate 2 (for example, the first electrode 10), and the other. A secondary joint portion 14 formed on an electrode (for example, a second electrode 11) and a wire main body portion 16 provided between the primary joint portion 12 and the secondary joint portion 14 are provided.

１次接合部１２は、ボンディングワイヤＷの先端に形成されたＦＡＢを第１電極１０に圧着する1次接合によって形成される。２次接合部１４は、ボンディングワイヤＷの外周面を圧着する2次接合によって形成される。 The primary bonding portion 12 is formed by a primary bonding in which the FAB formed at the tip of the bonding wire W is crimped to the first electrode 10. The secondary bonding portion 14 is formed by a secondary bonding that crimps the outer peripheral surface of the bonding wire W.

より具体的には、キャピラリ２０（図２、図３参照）に挿通されたボンディングワイヤＷの先端に放電加熱等によりＦＡＢを形成する。そして、キャピラリ２０は、ＦＡＢを保持しつつ半導体素子１の第１電極１０に向けて移動し、第１電極１０にＦＡＢを接触させる。ＦＡＢが第１電極１０に接触するとキャピラリ２０は、熱や荷重や超音波発振をＦＡＢに付与して第１電極１０にＦＡＢを圧着する。これにより、第１電極１０に密着する１次接合部１２が形成される。 More specifically, a FAB is formed at the tip of the bonding wire W inserted through the capillary 20 (see FIGS. 2 and 3) by electric discharge heating or the like. Then, the capillary 20 moves toward the first electrode 10 of the semiconductor element 1 while holding the FAB, and brings the FAB into contact with the first electrode 10. When the FAB comes into contact with the first electrode 10, the capillary 20 applies heat, load, or ultrasonic oscillation to the FAB to crimp the FAB to the first electrode 10. As a result, the primary joint portion 12 that is in close contact with the first electrode 10 is formed.

１次接合部１２が第１電極１０上に形成されると、キャピラリ２０は一定高さまで上昇して第１電極１０から離れた後、回路配線基板２の第２電極１１の上方位置へ移動する。このとき、必要に応じて特殊な動きをさせてワイヤＷに「くせ」付ける動作を行っても良い。 When the primary junction 12 is formed on the first electrode 10, the capillary 20 rises to a constant height, separates from the first electrode 10, and then moves to a position above the second electrode 11 of the circuit wiring board 2. .. At this time, if necessary, a special movement may be performed to "habit" the wire W.

そして、第２電極１１の上方位置へ移動したキャピラリ２０は、第２電極１１に向かって降下し、ボンディングワイヤＷの外周面を第２電極１１に押し付ける（図２参照）。この時、キャピラリ２０は、熱や荷重や超音波発振をボンディングワイヤＷの外周面に付与して第２電極１１にボンディングワイヤＷの外周面を圧着する。 Then, the capillary 20 that has moved to the upper position of the second electrode 11 descends toward the second electrode 11 and presses the outer peripheral surface of the bonding wire W against the second electrode 11 (see FIG. 2). At this time, the capillary 20 applies heat, load, and ultrasonic oscillation to the outer peripheral surface of the bonding wire W, and crimps the outer peripheral surface of the bonding wire W to the second electrode 11.

そして、２次接合部１４が第２電極１１に密着固定されると、図３に示すように、キャピラリ２０が上昇して、テール部と呼ばれる一定長さのワイヤＷをキャピラリ２０の下方に残しつつ、２次接合部１４の先端でボンディングワイヤＷを切断する。これにより、第２電極１１に密着する２次接合部１４が形成される（図４参照）。 Then, when the secondary bonding portion 14 is closely fixed to the second electrode 11, as shown in FIG. 3, the capillary 20 rises, leaving a wire W having a constant length called a tail portion below the capillary 20. At the same time, the bonding wire W is cut at the tip of the secondary bonding portion 14. As a result, the secondary joint portion 14 that is in close contact with the second electrode 11 is formed (see FIG. 4).

２次接合部１４は、通常、図２に示すようにキャピラリ２０がボンディングワイヤＷを第２電極１１に押し付けた時に、キャピラリ２０の先端に形成された先端面２２と第２電極１１とで挟まれる部分である。 The secondary joint portion 14 is usually sandwiched between the tip surface 22 formed at the tip of the capillary 20 and the second electrode 11 when the capillary 20 presses the bonding wire W against the second electrode 11 as shown in FIG. This is the part that is used.

なお、キャピラリ２０の先端面２２とは、キャピラリ２０の先端に設けられたボンディングワイヤＷを挿通するホール２４と所定の曲率半径を有するアウターラディアス部２６との間に形成された平滑な面であり、2次接合時にボンディングワイヤＷに対して大きな加工を与える。 The tip surface 22 of the capillary 20 is a smooth surface formed between the hole 24 through which the bonding wire W provided at the tip of the capillary 20 is inserted and the outer radius portion 26 having a predetermined radius of curvature. , Gives a large amount of processing to the bonding wire W at the time of secondary bonding.

ワイヤ本体部１６は、ボンディングワイヤＷにおいて１次接合部１２と２次接合部１４との間に設けられた部分である。ワイヤ本体部１６は、２次接合部１４側の端部に設けられた低加工部１６ａと、低加工部１６ａと１次接合部１２との間に設けられたワイヤ部１６ｂとを備える。低加工部１６ａは、キャピラリ２０のアウターラディアス部２６と第２電極１１とで挟まれる部分及びアウターラディアス部２６の押圧により変形した部分であって、２次接合部１４に比べて低い加工を受けた部分である。ワイヤ部１６ｂは、キャピラリ２０によってボンディングワイヤＷの径方向に押しつぶされていない線状の部分である。 The wire main body portion 16 is a portion of the bonding wire W provided between the primary bonding portion 12 and the secondary bonding portion 14. The wire main body portion 16 includes a low-processed portion 16a provided at the end on the secondary joint portion 14 side, and a wire portion 16b provided between the low-processed portion 16a and the primary joint portion 12. The low-processed portion 16a is a portion sandwiched between the outer radius portion 26 and the second electrode 11 of the capillary 20 and a portion deformed by the pressing of the outer radius portion 26, and is processed lower than the secondary joint portion 14. This is the part. The wire portion 16b is a linear portion that is not crushed in the radial direction of the bonding wire W by the capillary 20.

そして、２次接合部１４を形成し第１電極１０と第２電極１１とをボンディングワイヤＷによって接続した後、第１電極１０、第２電極１１及びボンディングワイヤＷを半導体素子１とともにエポキシ樹脂等の樹脂３によって封止して、図１に示すような半導体装置Ｐを得る。 Then, after forming the secondary bonding portion 14 and connecting the first electrode 10 and the second electrode 11 with the bonding wire W, the first electrode 10, the second electrode 11 and the bonding wire W are connected to the semiconductor element 1 together with an epoxy resin or the like. The semiconductor device P as shown in FIG. 1 is obtained by sealing with the resin 3 of.

なお、上記のような半導体装置Ｐの製造において、２次接合部１４を形成した後、２次接合部１４を高温雰囲気に曝し、２次接合部１４を加熱する再結晶工程を行っても良い。 In the manufacture of the semiconductor device P as described above, after forming the secondary junction 14, a recrystallization step may be performed in which the secondary junction 14 is exposed to a high temperature atmosphere and the secondary junction 14 is heated. ..

得られた半導体装置Ｐでは、ワイヤ本体部１６における銅結晶の平均粒径Ｒ１と、２次接合部１４における銅結晶の平均粒径Ｒ２との比率ρ（＝Ｒ２／Ｒ１）が０．８以上になっている。ここで、本明細書における平均粒径は、図５（ａ）及び（ｂ）に例示するように、ボンディングワイヤＷの２次接合部１４近傍の断面を走査型電子顕微鏡（ＳＥＭ）で観察することにより測定される。詳細には、同顕微鏡の画像データ上の測定対象の範囲に任意の直交する２本の直線Ｘ及び直線Ｙを引く。そして、一方の直線Ｘの長さＬＸと、他方の直線Ｙの長さＬＹと、一方の直線Ｘ上にある結晶粒の個数ＮＸと、他方の直線Ｙ上にある結晶粒の個数ＮＹを測定する。そして、一方の直線Ｘの長さＬＸを結晶粒の個数ＮＸで除した値（ＬＸ／ＮＸ）と、他方の直線Ｙの長さＬＹを結晶粒の個数ＮＹで除した値（ＬＹ／ＮＹ）との平均値（（ＬＸ／ＮＸ＋ＬＹ／ＮＹ）／２）を平均粒径とする。 In the obtained semiconductor device P, the ratio ρ (= R2 / R1) of the average particle size R1 of the copper crystals in the wire main body 16 to the average particle size R2 of the copper crystals in the secondary junction 14 is 0.8 or more. It has become. Here, as for the average particle size in the present specification, as illustrated in FIGS. 5A and 5B, a cross section in the vicinity of the secondary bonding portion 14 of the bonding wire W is observed with a scanning electron microscope (SEM). Measured by Specifically, two arbitrary orthogonal straight lines X and Y are drawn in the range of the measurement target on the image data of the microscope. Then, the length LX of one straight line X, the length LY of the other straight line Y, the number NX of crystal grains on one straight line X, and the number NY of crystal grains on the other straight line Y are measured. To do. Then, the value obtained by dividing the length LX of one straight line X by the number of crystal grains NX (LX / NX) and the value obtained by dividing the length LY of the other straight line Y by the number of crystal grains NY (LY / NY). The average value of ((LX / NX + LY / NY) / 2) is taken as the average particle size.

（２）ボンディングワイヤＷ
上記したボンディングワイヤＷは、純度９９．９９９質量％以上の銅からなり、不純物として種々の元素を含有してもよい。例えば、リン（Ｐ）、硫黄（Ｓ）、鉄（Ｆｅ）、銀（Ａｇ）、ニッケル（Ｎｉ）、クロム（Ｃｒ）、マンガン（Ｍｎ）、マグネシウム（Ｍｇ）、カルシウム（Ｃａ）、ナトリウム（Ｎａ）、アルミニウム（Ａｌ）、ケイ素（Ｓｉ）、アンチモン（Ｓｂ）、ヒ素（Ａｓ）及びビスマス（Ｂｉ）等を不純物として含有してもよい。ただし、リン、硫黄、鉄及び銀は、耐熱衝撃性への影響が大きいため含有量が制御されている。 (2) Bonding wire W
The bonding wire W described above is made of copper having a purity of 99.999% by mass or more, and may contain various elements as impurities. For example, phosphorus (P), sulfur (S), iron (Fe), silver (Ag), nickel (Ni), chromium (Cr), manganese (Mn), magnesium (Mg), calcium (Ca), sodium (Na). ), Aluminum (Al), silicon (Si), antimony (Sb), arsenic (As), bismuth (Bi) and the like may be contained as impurities. However, the contents of phosphorus, sulfur, iron and silver are controlled because they have a large effect on thermal shock resistance.

具体的には、リン、硫黄及び鉄の含有量の合計を０．０５質量ｐｐｍ未満に抑えることで、荷重や超音波発振等の加工を受けても繊維状の金属組織へ変化しにくくなる。リン、硫黄及び鉄の含有量の合計を０．０３質量ｐｐｍ未満に抑えることでその作用がより顕著となる。 Specifically, by suppressing the total content of phosphorus, sulfur, and iron to less than 0.05 mass ppm, it becomes difficult for the metal structure to change to a fibrous metal structure even when subjected to processing such as load or ultrasonic oscillation. The effect becomes more remarkable by suppressing the total content of phosphorus, sulfur and iron to less than 0.03 mass ppm.

また、リン、硫黄、鉄及び銀の含有量の合計を０．３ｐｐｍ未満に抑えることで、比較的低温（例えば、２００〜３００℃）の温度雰囲気において、金属組織が再結晶したり粒成長したりしやすくなる。そのため、加工を受けて繊維状に変化した金属組織を比較的低温の加熱雰囲気に曝すことで銅結晶の粒径を大きくすることができる。リン、硫黄、鉄及び銀の含有量の合計を０．２５ｐｐｍ未満に抑えることでその作用がより顕著となる。 Further, by suppressing the total content of phosphorus, sulfur, iron and silver to less than 0.3 ppm, the metal structure is recrystallized or grain-grown in a relatively low temperature atmosphere (for example, 200 to 300 ° C.). It becomes easy to do. Therefore, the particle size of the copper crystal can be increased by exposing the metal structure that has been processed into a fibrous form to a relatively low temperature heating atmosphere. The effect becomes more remarkable by suppressing the total content of phosphorus, sulfur, iron and silver to less than 0.25 ppm.

よって、本実施形態のボンディングワイヤＷは、リン、硫黄及び鉄の含有量の合計が０．０５質量ｐｐｍ未満であり、リン、硫黄、鉄及び銀の含有量の合計が０．３０質量ｐｐｍ未満である、純度が９９．９９９質量％以上の銅からなることが好ましい。より好ましくは、リン、硫黄及び鉄の含有量の合計を０．０３質量ｐｐｍ未満であり、リン、硫黄、鉄及び銀の含有量の合計を０．２５ｐｐｍ未満である。 Therefore, in the bonding wire W of the present embodiment, the total content of phosphorus, sulfur and iron is less than 0.05 mass ppm, and the total content of phosphorus, sulfur, iron and silver is less than 0.30 mass ppm. It is preferably made of copper having a purity of 99.999% by mass or more. More preferably, the total content of phosphorus, sulfur and iron is less than 0.03 ppm by mass, and the total content of phosphorus, sulfur, iron and silver is less than 0.25 ppm.

なお、銅、リン、硫黄、鉄、銀やその他の物質の含有量は、グロー放電質量分析法（Glow Discharge Mass Spectrometry、ＧＤＭＳ）によって測定された含有量である。 The content of copper, phosphorus, sulfur, iron, silver and other substances is the content measured by Glow Discharge Mass Spectrometry (GDMS).

（３）ボンディングワイヤＷの製造方法
次に、第１電極１０と第２電極１１の接続に用いるボンディングワイヤＷの製造方法の一例を説明する。 (3) Method for Manufacturing Bonding Wire W Next, an example of a method for manufacturing the bonding wire W used for connecting the first electrode 10 and the second electrode 11 will be described.

まず、グロー放電質量分析法によるリン、硫黄及び鉄の含有量の合計が０．０５質量ｐｐｍ未満であり、リン、硫黄、鉄及び銀の含有量の合計が０．３０質量ｐｐｍ未満である、純度が９９．９９９質量％以上の高純度銅を作製する。 First, the total content of phosphorus, sulfur and iron by glow discharge mass spectrometry is less than 0.05 mass ppm, and the total content of phosphorus, sulfur, iron and silver is less than 0.30 mass ppm. High-purity copper having a purity of 99.999% by mass or more is produced.

次いで、高純度銅をカーボンルツボ内に入れ、真空溶解連続鋳造炉において真空度１×１０−４Ｐａ以下で高周波溶解し、溶湯温度１１５０℃以上、保持時間１０分以上で十分に脱ガスする。その後、不活性ガスで大気圧に戻し、連続鋳造によって直径８ｍｍφの無酸素銅鋳造線材を鋳造する。得られた無酸素銅鋳造線材を所定の直径に達するまで縮径する。必要に応じて伸線加工の途中で軟化熱処理を行っても良い。 Next, high-purity copper is placed in a carbon crucible, melted at a high frequency at a vacuum degree of 1 × 10 -4 Pa or less in a vacuum melting continuous casting furnace, and sufficiently degassed at a molten metal temperature of 1150 ° C. or higher and a holding time of 10 minutes or longer. Then, the pressure is returned to atmospheric pressure with an inert gas, and an oxygen-free copper cast wire having a diameter of 8 mmφ is cast by continuous casting. The obtained oxygen-free copper cast wire is reduced in diameter until it reaches a predetermined diameter. If necessary, softening heat treatment may be performed during the wire drawing process.

そして、所定の直径まで伸線加工を行った後、必要に応じてフォーミングガス（水素５％、窒素９５％含有するガス）雰囲気下で連続焼きなましを行い、ボンディングワイヤが得られる。 Then, after wire drawing to a predetermined diameter, continuous annealing is performed in a forming gas (gas containing 5% hydrogen and 95% nitrogen) atmosphere as needed to obtain a bonding wire.

なお、最終的なボンディングワイヤＷの直径は用途に応じて種々の大きさとしてよい。例えば、ボンディングワイヤＷの直径は５μｍ以上１５０μｍ以下とすることができる。 The diameter of the final bonding wire W may be various in size depending on the application. For example, the diameter of the bonding wire W can be 5 μm or more and 150 μm or less.

（４）効果
上記した本実施形態の半導体装置Ｐでは、ボンディングワイヤＷのワイヤ本体部１６における銅結晶の平均粒径Ｒ１に対する２次接合部１４における銅結晶の平均粒径Ｒ２の比率ρが０．８以上であり、大きな加工を受ける２次接合部１４と、加工を受けない部分及び低い加工を受けた部分からなるワイヤ本体部１６とで銅結晶の粒径の差が小さい。そのため、周囲温度の変化によってボンディングワイヤＷに負荷がかかっても、その負荷をワイヤの広い範囲に分散することができ破断を防ぐことができ、耐熱衝撃性を良好にすることができる。 (4) Effect In the semiconductor device P of the present embodiment described above, the ratio ρ of the average particle size R2 of the copper crystals in the secondary bonding portion 14 to the average particle size R1 of the copper crystals in the wire main body 16 of the bonding wire W is 0. The difference in particle size of the copper crystal is small between the secondary bonding portion 14 which is 0.8 or more and undergoes large processing and the wire main body portion 16 which is composed of a portion which is not processed and a portion which is subjected to low processing. Therefore, even if a load is applied to the bonding wire W due to a change in ambient temperature, the load can be dispersed over a wide range of the wire, breakage can be prevented, and thermal shock resistance can be improved.

また、上記した本実施形態のボンディングワイヤＷでは、リン、硫黄及び鉄の含有量が上記のように制御されているため、ボールボンディング法の2次接合時に２次接合部１４が大きな加工を受けても金属組織が繊維状に変化しにくくなる。そのため、大きな加工を受ける２次接合部１４と、加工を受けない部分及び低い加工を受けた部分からなるワイヤ本体部１６との間で銅結晶の粒径の差を小さくすることができる。よって本実施形態のボンディングワイヤＷでは、周囲温度の変化によってボンディングワイヤＷに負荷がかかっても、その負荷をワイヤの広い範囲に分散することができ破断を防ぐことができる。 Further, in the bonding wire W of the present embodiment described above, since the contents of phosphorus, sulfur and iron are controlled as described above, the secondary bonding portion 14 undergoes a large processing during the secondary bonding of the ball bonding method. However, the metal structure is less likely to change into a fibrous form. Therefore, it is possible to reduce the difference in particle size of the copper crystal between the secondary joint portion 14 that undergoes large processing and the wire main body portion 16 that is composed of a portion that has not undergone processing and a portion that has undergone low processing. Therefore, in the bonding wire W of the present embodiment, even if a load is applied to the bonding wire W due to a change in ambient temperature, the load can be dispersed over a wide range of the wire and breakage can be prevented.

また、本実施形態のボンディングワイヤＷでは、リン、硫黄、鉄及び銀の含有量が上記のように制御されているため、比較的低温の加熱雰囲気で銅結晶を再結晶させたり粒成長させることができる。そのため、2次接合終了後に半導体素子等に悪影響を及ぼすことのない比較的低温の熱処理によって２次接合部１４の金属組織を再結晶させたり粒成長させたりすることができる。これにより、２次接合部１４とワイヤ本体部１６との境界近傍における銅結晶の粒径の差が小さくなり、周囲温度の変化に起因してボンディングワイヤＷが負荷を受けても破断しにくくなる。 Further, in the bonding wire W of the present embodiment, since the contents of phosphorus, sulfur, iron and silver are controlled as described above, the copper crystals are recrystallized or grown in a relatively low temperature heating atmosphere. Can be done. Therefore, the metal structure of the secondary junction 14 can be recrystallized or grain-grown by a relatively low-temperature heat treatment that does not adversely affect the semiconductor element or the like after the completion of the secondary junction. As a result, the difference in particle size of the copper crystals near the boundary between the secondary bonding portion 14 and the wire main body portion 16 becomes small, and the bonding wire W is less likely to break even if it receives a load due to a change in ambient temperature. ..

特に、ボンディングワイヤＷで接続された第１電極１０及び第２電極１１を樹脂３によって封止する場合、本実施形態のボンディングワイヤＷは、比較的低温の加熱雰囲気で金属組織を再結晶させたり粒成長させることができるため、封止時に２次接合部１４に加わる熱によって、２次接合部１４の銅結晶を再結晶させたり粒成長させたりすることができる。つまり、本実施形態のボンディングワイヤＷでは、樹脂３による半導体素子１の封止工程と２次接合部１４を加熱する再結晶工程とを一度に行うことができる。 In particular, when the first electrode 10 and the second electrode 11 connected by the bonding wire W are sealed with the resin 3, the bonding wire W of the present embodiment may recrystallize the metal structure in a relatively low temperature heating atmosphere. Since the grains can be grown, the copper crystals of the secondary bonding portion 14 can be recrystallized or grain grown by the heat applied to the secondary bonding portion 14 at the time of sealing. That is, in the bonding wire W of the present embodiment, the sealing step of the semiconductor element 1 with the resin 3 and the recrystallization step of heating the secondary bonding portion 14 can be performed at the same time.

以上、本発明の実施形態を説明したが、これらの実施形態は例として提示したものであり、発明の範囲を限定することを意図していない。これらの実施形態は、その他の様々な形態で実施されることが可能であり、発明の趣旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これらの実施形態やその変形は、発明の範囲や要旨に含まれると同様に、特許請求の範囲に記載された発明とその均等の範囲に含まれるものである。 Although the embodiments of the present invention have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, as well as in the scope of the invention described in the claims and the equivalent scope thereof.

以下、本発明を実施例によって更に具体的に説明するが、本発明はこれら実施例に限定されるものではない。 Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples.

下記表１に示すようなリン、硫黄及び鉄の含有量の合計と、リン、硫黄、鉄及び銀の含有量の合計が、下記表１に示すように制御された高純度（純度９９．９９９９質量％以上及び純度９９．９９質量％以上）の銅原料を用い、上記（３）と同様の方法により直径３０μｍのボンディングワイヤを成形した。その後、水素を５％含有し及び窒素を９５％含有するフォーミングガス雰囲気下で連続焼きなましを行い、実施例１〜１２及び比較例１〜１０のボンディングワイヤを得た。 The total content of phosphorus, sulfur and iron as shown in Table 1 below and the total content of phosphorus, sulfur, iron and silver are controlled as shown in Table 1 below with high purity (purity 99.99999). Using a copper raw material having a mass% or more and a purity of 99.99% by mass or more), a bonding wire having a diameter of 30 μm was formed by the same method as in (3) above. Then, continuous annealing was performed in a forming gas atmosphere containing 5% hydrogen and 95% nitrogen to obtain bonding wires of Examples 1 to 12 and Comparative Examples 1 to 10.

得られた実施例１〜１２及び比較例１〜１０の各ボンディングワイヤを用いて、銀メッキされた銅合金リードフレームとシリコンチップのアルミニウム電極との間をワイヤボンディングした。なお、ワイヤボンディングは、ステージ温度を２００℃に設定したワイヤボンダー（Ｋ＆Ｓ社製、ＩＣｏｎｎ）を用いて行った。また、リードフレームは、ワイヤボンディングの前にアルゴン・窒素雰囲気下でプラズマ洗浄を行い、表面を清浄にした。 Using the obtained bonding wires of Examples 1 to 12 and Comparative Examples 1 to 10, wire bonding was performed between the silver-plated copper alloy lead frame and the aluminum electrode of the silicon chip. The wire bonding was performed using a wire bonder (manufactured by K & S, IConn) in which the stage temperature was set to 200 ° C. The surface of the lead frame was cleaned by plasma cleaning in an argon / nitrogen atmosphere before wire bonding.

そして、ワイヤボンディングの後、エポキシ樹脂（住友ベークライト製半導体封止用エポキシ樹脂成形材料「スミコン（登録商標）ＥＭＥ」）を用い、モールドプレス金型温度１７５℃、注入圧力６．８MPa、注入時間２０ 秒の条件でシリコンチップ及びリードフレームを樹脂封止した。その後、モールド金型内で１２０ 秒キュアしたのち、さらに１７５℃ オーブン中で6 時間キュアして、実施例１〜１２及び比較例１〜１０の各ボンディングワイヤを用いた半導体装置を得た。 Then, after wire bonding, using an epoxy resin (Sumitomo Bakelite's epoxy resin molding material for semiconductor encapsulation "Sumicon (registered trademark) EME"), the mold press mold temperature is 175 ° C, the injection pressure is 6.8 MPa, and the injection time is 20. The silicon chip and lead frame were resin-sealed under the condition of seconds. Then, after curing in a mold for 120 seconds, it was further cured in an oven at 175 ° C. for 6 hours to obtain a semiconductor device using the bonding wires of Examples 1 to 12 and Comparative Examples 1 to 10.

得られた半導体装置について、（ａ）熱サイクル試験、（ｂ）ワイヤ本体部における銅結晶の平均粒径と、２次接合部における銅結晶の平均粒径との比率ρを評価した。熱サイクル試験、銅結晶の平均粒径の比率ρの評価方法、は以下のとおりである。
（ａ）熱サイクル試験
樹脂封止を行った半導体装置を市販の熱サイクル試験装置を用いて評価した。温度履歴は−６０℃で３０分間保持した後、１５０℃まで昇温しこの温度で３０分間保持する。これを１サイクルとして、１サイクル終了毎にボンディングワイヤWの破断がないかどうか電気的測定を行い、破断した時のサイクル数を計測した。 The obtained semiconductor device was evaluated for (a) a thermal cycle test and (b) a ratio ρ of the average particle size of copper crystals in the wire main body and the average particle size of copper crystals in the secondary junction. The thermodynamic cycle test and the evaluation method of the ratio ρ of the average particle size of copper crystals are as follows.
(A) Thermal cycle test A resin-sealed semiconductor device was evaluated using a commercially available thermal cycle test device. The temperature history is held at −60 ° C. for 30 minutes, then heated to 150 ° C. and held at this temperature for 30 minutes. With this as one cycle, electrical measurement was performed at each end of each cycle to see if the bonding wire W was broken, and the number of cycles at the time of breaking was measured.

評価方法は、上記熱処理を３０００サイクル行ってもボンディングワイヤWの破断が起こらなかった場合を「Ａ」、１０００サイクル以上３０００サイクル未満で破断が起こった場合を「Ｂ」、１０００サイクル未満で破断が起こった場合を「Ｄ」とした。
（ｂ）銅結晶の平均粒径の比率ρ
得られた半導体装置について、ボンディングワイヤを２次接合部近傍で長手方向（ワイヤが延びる方向）に沿って切断し、その切断面を走査型電子顕微鏡で観察した。 The evaluation method is "A" when the bonding wire W does not break even after 3000 cycles of the above heat treatment, "B" when the bonding wire W breaks in 1000 cycles or more and less than 3000 cycles, and breaks in less than 1000 cycles. The case where it occurred was designated as "D".
(B) Ratio of average particle size of copper crystals ρ
With respect to the obtained semiconductor device, the bonding wire was cut along the longitudinal direction (the direction in which the wire extends) in the vicinity of the secondary bonding portion, and the cut surface was observed with a scanning electron microscope.

同顕微鏡の画像データ上のワイヤ本体部に任意の直交する２本の直線Ｘ１及び直線Ｙ１を引き、直線Ｘの長さＬＸ１と、直線Ｙ１の長さＬＹ１と、直線Ｘ１上にある結晶粒の個数ＮＸ１と、直線Ｙ１上にある結晶粒の個数ＮＹ１を測定し、これらの測定結果から平均値（（ＬＸ１／ＮＸ１＋ＬＹ１／ＮＹ１）／２）を算出し、この平均値をワイヤ本体部における銅結晶の平均粒径Ｒ１とした。 Two arbitrary orthogonal straight lines X1 and Y1 are drawn on the image data of the microscope, and the length LX1 of the straight line X, the length LY1 of the straight line Y1, and the crystal grains on the straight line X1 are drawn. The number NX1 and the number NY1 of crystal grains on the straight line Y1 are measured, an average value ((LX1 / NX1 + LY1 / NY1) / 2) is calculated from these measurement results, and this average value is used as the copper crystal in the wire body. The average particle size was R1.

また、２次接合部についてもワイヤ本体部と同様、同顕微鏡の画像データ上の２次接合部に任意の直交する２本の直線Ｘ２及び直線Ｙ２を引き、直線Ｘ２の長さＬＸ２と、直線Ｙ２の長さＬＹ２と、直線Ｘ２上にある結晶粒の個数ＮＸ２と、直線Ｙ２上にある結晶粒の個数ＮＹ２を測定し、これらの測定結果から平均値（（ＬＸ２／ＮＸ２＋ＬＹ２／ＮＹ２）／２）を算出し、この平均値を２次接合部における銅結晶の平均粒径Ｒ２とした。
そして、平均粒径Ｒ２を平均粒径Ｒ１で除して比率ρを算出した。 As for the secondary joint, as with the wire body, two straight lines X2 and Y2 that are arbitrarily orthogonal to the secondary joint on the image data of the same microscope are drawn, and the length LX2 of the straight line X2 and the straight line The length LY2 of Y2, the number of crystal grains NX2 on the straight line X2, and the number of crystal grains NY2 on the straight line Y2 were measured, and the average value ((LX2 / NX2 + LY2 / NY2) / 2) was measured from these measurement results. ) Was calculated, and this average value was taken as the average particle size R2 of the copper crystals at the secondary junction.
Then, the average particle size R2 was divided by the average particle size R1 to calculate the ratio ρ.

評価方法は、比率ρが０．９以上の場合を「Ａ」、０．９以上０．８未満の場合を「Ｂ」、０．８未満を「Ｄ」とした。 The evaluation method was "A" when the ratio ρ was 0.9 or more, "B" when the ratio was 0.9 or more and less than 0.8, and "D" when the ratio was less than 0.8.

Figure 2021072393
結果は、表１に示すとおりであり、実施例１〜１２のボンディングワイヤを用いた半導体装置では、熱サイクル試験の評価が「Ａ」又は「Ｂ」、銅結晶の平均粒径の評価が「Ａ」又は「Ｂ」となり、耐熱衝撃性に優れていることが分かった。
Figure 2021072393
 The results are shown in Table 1. In the semiconductor device using the bonding wires of Examples 1 to 12, the evaluation of the thermal cycle test was "A" or "B", and the evaluation of the average particle size of the copper crystal was "". It became "A" or "B", and it was found that it was excellent in thermal shock resistance.

また、図５（ａ）及び（ｂ）に示すように、実施例１では、キャピラリ２０によって大きな加工を受ける２次接合部１４の銅結晶の平均粒径Ｒ２が２次接合部１４の厚みの３０％以上となり、大きな銅結晶が２次接合部１４に存在することが観察された。なお、２次接合部の厚みとは、２次接合部全体の厚みの平均値である。他の実施例２〜１２においても実施例１と同様、２次接合部１４の銅結晶が２次接合部１４の厚みの３０％以上となり、大きな銅結晶が２次接合部１４に存在することが観察された。 Further, as shown in FIGS. 5 (a) and 5 (b), in the first embodiment, the average particle size R2 of the copper crystals of the secondary junction 14 undergoing large processing by the capillary 20 is the thickness of the secondary junction 14. It was 30% or more, and it was observed that large copper crystals were present at the secondary junction 14. The thickness of the secondary joint is an average value of the thickness of the entire secondary joint. In the other Examples 2 to 12, as in the case of Example 1, the copper crystal of the secondary junction 14 is 30% or more of the thickness of the secondary junction 14, and a large copper crystal is present in the secondary junction 14. Was observed.

特に、リン、硫黄及び鉄の含有量の合計が０．０３質量ｐｐｍ未満であり、リン、硫黄、鉄及び銀の含有量の合計が０．２５質量ｐｐｍ未満である実施例１，３，４，７，１１及び１２のボンディングワイヤを用いた半導体装置では、熱サイクル試験が「Ａ」、銅結晶の平均粒径の比率ρが０．９以上となり、耐熱衝撃性により一層優れていることが分かった。 In particular, Examples 1, 3 and 4 in which the total content of phosphorus, sulfur and iron is less than 0.03 mass ppm and the total content of phosphorus, sulfur, iron and silver is less than 0.25 mass ppm. In the semiconductor device using the bonding wires of, 7, 11 and 12, the thermal cycle test is "A", the ratio ρ of the average particle size of the copper crystal is 0.9 or more, and it is further excellent in thermal shock resistance. Do you get it.

一方、比較例１〜１０ではいずれも、熱サイクル試験が「Ｄ」、銅結晶の平均粒径の比率ρが０．８未満となり、実施例１〜１２のボンディングワイヤに比べて耐熱衝撃性に劣っていた。 On the other hand, in all of Comparative Examples 1 to 10, the thermal cycle test was "D", the ratio ρ of the average particle size of the copper crystals was less than 0.8, and the thermal impact resistance was higher than that of the bonding wires of Examples 1 to 12. It was inferior.

また、図６（ａ）及び（ｂ）に示すように、比較例１では、２次接合部１４の銅結晶の平均粒径Ｒ２が２次接合部１４の厚みの３０％未満となり、粒径の小さい繊維状の銅結晶が２次接合部１４に存在することが観察された。他の比較例２〜１０においても比較例１と同様、２次接合部１４の銅結晶が２次接合部１４の厚みの３０％未満となり、粒径の小さい繊維状の銅結晶が２次接合部１４に存在することが観察された。 Further, as shown in FIGS. 6A and 6B, in Comparative Example 1, the average particle size R2 of the copper crystals of the secondary bonding portion 14 is less than 30% of the thickness of the secondary bonding portion 14, and the particle size is small. It was observed that small fibrous copper crystals were present at the secondary junction 14. In the other Comparative Examples 2 to 10, as in Comparative Example 1, the copper crystal of the secondary bonding portion 14 is less than 30% of the thickness of the secondary bonding portion 14, and the fibrous copper crystal having a small particle size is the secondary bonding. It was observed to be present in part 14.

Ｐ…半導体装置、１…半導体素子、２…回路配線基板、３…樹脂、１０…第１電極、１１…第２電極、１２…１次接合部、１４…２次接合部、１６…ワイヤ本体部、１６ａ…低加工部、１６ｂ…ワイヤ部、２０…キャピラリ、２２…先端面、２４…ホール、２６…アウターラディアス部 P ... Semiconductor device, 1 ... Semiconductor element, 2 ... Circuit wiring board, 3 ... Resin, 10 ... First electrode, 11 ... Second electrode, 12 ... Primary junction, 14 ... Secondary junction, 16 ... Wire body Part, 16a ... Low processing part, 16b ... Wire part, 20 ... Capillary, 22 ... Tip surface, 24 ... Hole, 26 ... Outer radius part

Claims (4)

リン、硫黄及び鉄の含有量の合計が０．０５質量ｐｐｍ未満であり、リン、硫黄、鉄及び銀の含有量の合計が０．３０質量ｐｐｍ未満である、純度が９９．９９９質量％以上の銅からなる銅ボンディングワイヤ。 The total content of phosphorus, sulfur and iron is less than 0.05 mass ppm, the total content of phosphorus, sulfur, iron and silver is less than 0.30 mass ppm, and the purity is 99.999 mass% or more. Copper bonding wire made of copper. リン、硫黄及び鉄の含有量の合計が０．０３質量ｐｐｍ未満であり、リン、硫黄、鉄及び銀の含有量の合計が０．２５質量ｐｐｍ未満である、請求項１に記載の銅ボンディングワイヤ。 The copper bonding according to claim 1, wherein the total content of phosphorus, sulfur and iron is less than 0.03 mass ppm and the total content of phosphorus, sulfur, iron and silver is less than 0.25 mass ppm. Wire. 第１電極を有する半導体素子と、第２電極を有する基板と、前記第１電極と前記第２電極とを接続するボンディングワイヤとを備える半導体装置において、
前記ボンディングワイヤは、純度が９９．９９９質量％以上の銅からなり、前記第１電極及び前記第２電極のいずれか一方にフリーエアボールが圧着されてなる１次接合部と、他方に接着された２次接合部と、前記１次接合部と前記２次接合部との間に設けられたワイヤ本体部とを備え、
前記ワイヤ本体部における銅結晶の平均粒径Ｒ１に対する前記２次接合部における銅結晶の平均粒径Ｒ２の比率（Ｒ２／Ｒ１）が０．８以上である半導体装置。 In a semiconductor device including a semiconductor element having a first electrode, a substrate having a second electrode, and a bonding wire connecting the first electrode and the second electrode.
The bonding wire is made of copper having a purity of 99.999% by mass or more, and is bonded to a primary bonding portion formed by crimping a free air ball to either one of the first electrode and the second electrode and to the other. It is provided with a secondary joint portion and a wire main body portion provided between the primary joint portion and the secondary joint portion.
A semiconductor device in which the ratio (R2 / R1) of the average particle size R2 of copper crystals in the secondary junction to the average particle size R1 of copper crystals in the wire body is 0.8 or more. 前記ボンディングワイヤが、リン、硫黄及び鉄の含有量の合計が０．０５質量ｐｐｍ未満であり、リン、硫黄、鉄及び銀の含有量の合計が０．３０質量ｐｐｍ未満である、請求項３に記載の半導体装置。 3. The bonding wire has a total content of phosphorus, sulfur and iron of less than 0.05 mass ppm and a total content of phosphorus, sulfur, iron and silver of less than 0.30 mass ppm. The semiconductor device described in 1.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104061A (en) * 1985-10-30 1987-05-14 Tatsuta Electric Wire & Cable Co Ltd Bonding wire for semiconductor element and manufacture thereof
JPH04323835A (en) * 1991-04-23 1992-11-13 Hitachi Cable Ltd Manufacture of copper bonding wire
JPH09283551A (en) * 1996-04-17 1997-10-31 Toshiba Corp Bonding and bonding device
WO2006134724A1 (en) * 2005-06-15 2006-12-21 Nippon Mining & Metals Co., Ltd. Ultrahigh-purity copper and process for producing the same, and bonding wire comprising ultrahigh-purity copper

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63235440A (en) * 1987-03-23 1988-09-30 Furukawa Electric Co Ltd:The Fine copper wire and its production
JP2623143B2 (en) * 1989-10-18 1997-06-25 同和鉱業株式会社 Manufacturing method of high purity copper wire composed of coarse crystal grains
JPH04218932A (en) * 1990-12-19 1992-08-10 Mitsubishi Materials Corp Copper alloy ultrathin wire for semiconductor device and semiconductor device
US6444489B1 (en) * 2000-12-15 2002-09-03 Charles W. C. Lin Semiconductor chip assembly with bumped molded substrate
JP4224086B2 (en) * 2006-07-06 2009-02-12 三井金属鉱業株式会社 Wiring board and semiconductor device excellent in folding resistance
JP5214282B2 (en) * 2008-03-07 2013-06-19 株式会社神戸製鋼所 Copper alloy plate for QFN package with excellent dicing workability
SG178934A1 (en) * 2009-09-08 2012-04-27 Sumitomo Bakelite Co Semiconductor device
JP6231277B2 (en) * 2011-01-28 2017-11-15 住友ベークライト株式会社 Epoxy resin composition for sealing and electronic component device
JP6341203B2 (en) * 2013-06-20 2018-06-13 住友ベークライト株式会社 Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104061A (en) * 1985-10-30 1987-05-14 Tatsuta Electric Wire & Cable Co Ltd Bonding wire for semiconductor element and manufacture thereof
JPH04323835A (en) * 1991-04-23 1992-11-13 Hitachi Cable Ltd Manufacture of copper bonding wire
JPH09283551A (en) * 1996-04-17 1997-10-31 Toshiba Corp Bonding and bonding device
WO2006134724A1 (en) * 2005-06-15 2006-12-21 Nippon Mining & Metals Co., Ltd. Ultrahigh-purity copper and process for producing the same, and bonding wire comprising ultrahigh-purity copper

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
加藤 正憲: "高純度銅の特性と用途", 伸銅技術研究会誌, vol. 35巻, JPN6022019960, 1996, JP, pages 28 - 35, ISSN: 0004778834 *

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