JP2021059490A - Silica-based particle dispersion and method for producing the same - Google Patents

Silica-based particle dispersion and method for producing the same Download PDF

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JP2021059490A
JP2021059490A JP2020168315A JP2020168315A JP2021059490A JP 2021059490 A JP2021059490 A JP 2021059490A JP 2020168315 A JP2020168315 A JP 2020168315A JP 2020168315 A JP2020168315 A JP 2020168315A JP 2021059490 A JP2021059490 A JP 2021059490A
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silica
particles
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deformed
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中山 和洋
Kazuhiro Nakayama
和洋 中山
達也 向井
Tatsuya Mukai
達也 向井
真吾 柏田
Shingo Kashiwada
真吾 柏田
勇樹 三輪
Yuki Miwa
勇樹 三輪
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JGC Catalysts and Chemicals Ltd
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To provide a silica-based particle dispersion containing a silica-based particle group capable of achieving high polishing speed and high surface accuracy for a silica-based substrate, an NiP-plated substrate to be polished, or the like.SOLUTION: A silica-based particle dispersion containing a silica-based particle group comprising deformed silica-based particles and non-deformed silica-based particles, wherein the silica-based particle group satisfies the following [1]-[3]: [1] a weight average particle diameter (D1) is between 60 and 400 nm and a specific surface area equivalent particle diameter (D2) is between 20 and 300 nm; [2] a deformation degree D (D=D1/D3) expressed as the ratio of the weight average particle size (D1) to a projected area equivalent particle size (D3) is in the range of 1.1 to 5.0; and [3] when its volume-based particle size distribution is waveform-separated, it shows a multi-peak distribution in which three or more separation peaks are detected.SELECTED DRAWING: None

Description

本発明は、シリカ系粒子分散液等に関する。詳細には、研磨材として好ましい粒子径、粒子径分布、異形度等を有するシリカ系粒子群を含み、特に、磁気ディスク製造においてNiPメッキされた被研磨基板およびシリカ系基板を化学機械的研磨(ケミカルメカニカルポリッシング、CMP)により平坦化するための研磨用砥粒分散液として好適なシリカ系粒子分散液等に関する。 The present invention relates to a silica-based particle dispersion liquid and the like. Specifically, a silica-based particle group having a preferable particle size, particle size distribution, irregularity, etc. as an abrasive is included, and in particular, a NiP-plated substrate to be polished and a silica-based substrate are chemically mechanically polished (in particular in magnetic disk manufacturing). The present invention relates to a silica-based particle dispersion liquid suitable as an abrasive grain dispersion liquid for polishing for flattening by chemical mechanical polishing (CMP).

磁気ディスクや半導体などの製造プロセスでは、Siウエハ、ガラスHD、アルミHDなどの基板を平坦化させるために、化学機械的研磨(CMP)が適用されている。この化学機械的研磨では、シリカやセリアなどの砥粒を水に分散させ、さらに研磨性能を制御するためにケミカル成分を添加した、いわゆる研磨スラリーが用いられている。特に、砥粒は研磨性能に大きな影響を及ぼすことが知られており、砥粒に求められる性能としては、高い研磨速度を得ることができ且つ研磨面にスクラッチ(線条痕)などのディフェクト(欠陥)が生じない事が挙げられる。 In the manufacturing process of magnetic disks, semiconductors, etc., chemical mechanical polishing (CMP) is applied to flatten substrates such as Si wafers, glass HD, and aluminum HD. In this chemical mechanical polishing, a so-called polishing slurry in which abrasive grains such as silica and ceria are dispersed in water and a chemical component is added to control the polishing performance is used. In particular, it is known that abrasive grains have a great influence on polishing performance, and the performance required for abrasive grains is that a high polishing speed can be obtained and defects such as scratches (streak marks) are found on the polished surface. Defects) do not occur.

高い研磨速度を得る方法としては、大きな粒子径の砥粒を使用する事が一般的である。しかし、砥粒の粒子径が大きくなり過ぎると、質量当たりの砥粒個数が減少するため逆に研磨速度が低下し、さらにスクラッチも増加する傾向にある。そこで、スクラッチを増加させることなく高い研磨速度を得るために、砥粒を非球形とする、つまり砥粒を異形形状の粒子(異形粒子)とすることが有効である事が知られている。 As a method of obtaining a high polishing rate, it is common to use abrasive grains having a large particle size. However, if the particle size of the abrasive grains becomes too large, the number of abrasive grains per mass decreases, so that the polishing rate decreases and scratches tend to increase. Therefore, in order to obtain a high polishing rate without increasing scratches, it is known that it is effective to make the abrasive grains non-spherical, that is, to make the abrasive grains irregularly shaped particles (odd particles).

研磨材に適した粒子径を有する異形シリカ粒子を含むシリカ粒子群を調製する方法としては、水ガラスを原料として核生成時にシリカ粒子を凝集させる方法や、この方法などから調製した異形のシード粒子に珪酸液を添加して粒子径を大きく成長させる方法(特許文献1)が従来から知られている。 As a method for preparing a group of silica particles containing irregularly shaped silica particles having a particle size suitable for an abrasive material, a method of aggregating silica particles at the time of nucleation using water glass as a raw material, or a method of aggregating silica particles at the time of nucleation, or an irregularly shaped seed particle prepared from this method A method of adding a silicic acid solution to a large particle size to grow a large particle size (Patent Document 1) has been conventionally known.

また、異形で比較的大きな粒子径を有するシリカ系粒子群の調製方法として、特許文献1以外には、多孔質シリカゲルをアルカリ性下で湿式解砕して異形シリカ粒子を含む解砕ゲルにする工程a、前記解砕ゲルを含む溶液にアルカリ性下でケイ酸液を添加して加温し、前記異形シリカ粒子の細孔を珪酸との反応でビルドアップして埋めると共に異形のまま粒子を成長させる工程b、成長した異形シリカ粒子を回収する工程cを有することを特徴とする異形シリカ粒子の製造方法(特許文献2)が知られている。 In addition to Patent Document 1, as a method for preparing a group of silica-based particles having a deformed shape and a relatively large particle size, a step of wet-crushing porous silica gel under alkaline conditions to form a crushed gel containing the deformed silica particles. a. The solution containing the crushed gel is heated by adding a silicic acid solution under alkaline conditions, and the pores of the deformed silica particles are built up and filled by the reaction with silicic acid, and the particles are grown in the deformed shape. A method for producing deformed silica particles (Patent Document 2) is known, which comprises step b and step c for recovering the grown deformed silica particles.

特許第5127452号公報Japanese Patent No. 5127452 特開2017−177576号公報JP-A-2017-177576

異形粒子においては、異形度(重量平均粒子径と投影面積相当粒子径との比)も研磨性能に大きく影響を与える。具体的には異形度が大きな粒子は研磨速度が高い傾向にある。一方で、異形度が小さい粒子は、真球状あるいは楕円状に近い粒子であるため、研磨速度が低くなる傾向にある。しかし、異形粒子はその形状が非球形であることから、通常は、球形または略球形の粒子(非異形粒子)と比較するとスクラッチが発生しやすい傾向にあり、特に、異形度が高い場合にその傾向が顕著となる。 For irregularly shaped particles, the degree of irregularity (ratio of weight average particle diameter to projected area equivalent particle diameter) also greatly affects the polishing performance. Specifically, particles having a large degree of deformation tend to have a high polishing rate. On the other hand, particles having a small degree of deformation tend to have a low polishing rate because they are spherical or nearly elliptical particles. However, since the deformed particles are non-spherical in shape, they usually tend to be scratched more easily than spherical or substantially spherical particles (non-spherical particles), and especially when the degree of deformity is high. The tendency becomes remarkable.

また、一般に、研磨砥粒の粒子径と、粒子径分布が研磨性能に大きく影響することが知られており、粒子径が大きな砥粒は、研磨速度は高いものの、研磨基板の面精度(表面粗さ、うねり、スクラッチ等)は悪化する傾向にある。一方で、粒子径が小さな砥粒は、基板表面は平滑に仕上げることができ、スクラッチも生じ難いが、研磨速度が遅くなる。これは球形粒子に限らず、異形粒子の場合も同様である。
異形粒子といっても、その粒子径分布は多種多様であるが、通常、粒子径が比較的大きな粒子は研磨速度が高いため、高い研磨速度が要求される場合は、できるだけ平均粒子径が大きい異形粒子が用いられる。しかし、平均粒子径が比較的大きな異形粒子の場合、粒子径分布の裾が大粒子径側に大きく広がる傾向にあるので、平均粒子径に比して粗大な粒子を微量ながら含むことが多い。そして、このような粗大な粒子に起因して、研磨基板にスクラッチが生じたり、基板の表面粗さやうねりが悪化したりする傾向にある。そのため、高い研磨速度が要求される研磨に使用する砥粒として、平均粒子径が比較的大きく、且つ粗粒や過剰な大粒子(これらは総称して「粗大粒子」と呼ばれる)が極めて少ない異形粒子が望まれる。
Further, it is generally known that the particle size and the particle size distribution of the abrasive grains have a great influence on the polishing performance, and the abrasive grains having a large particle size have a high polishing speed, but the surface accuracy (surface) of the polishing substrate. Roughness, waviness, scratches, etc.) tend to worsen. On the other hand, with abrasive grains having a small particle size, the surface of the substrate can be finished smoothly and scratches are unlikely to occur, but the polishing speed becomes slow. This applies not only to spherical particles but also to irregularly shaped particles.
Although the irregularly shaped particles have a wide variety of particle size distributions, particles having a relatively large particle size usually have a high polishing rate. Therefore, when a high polishing rate is required, the average particle size is as large as possible. Variant particles are used. However, in the case of irregularly shaped particles having a relatively large average particle size, the tail of the particle size distribution tends to spread widely toward the large particle size side, so that particles that are coarser than the average particle size are often contained in a small amount. Then, due to such coarse particles, the polished substrate tends to be scratched, and the surface roughness and waviness of the substrate tend to be deteriorated. Therefore, as abrasive grains used for polishing requiring a high polishing rate, a variant having a relatively large average particle size and extremely few coarse particles and excessive large particles (these are collectively referred to as "coarse particles"). Particles are desired.

さらに、粒子径が比較的小さい粒子は、球状粒子又は異形粒子を問わず、砥粒1個の研磨量が小さいことから研磨速度が低くなる傾向にある。また、粒子径が比較的小さい粒子は、研磨後に砥粒が基板上に残留し易い(これは「砥粒残り」と呼ばれる)。この砥粒残りは、研磨後の洗浄工程でも除去し難い傾向にある。この傾向は平均粒子径が比較的大きな異形粒子においても同様に見られるものであり、平均粒子径が比較的大きな異形粒子であっても、粒子径分布の裾が小粒子径側に広がったような分布の異形粒子は、砥粒残りが発生し易いといえる。
したがって、高い研磨速度と高い面精度を両立する好適な化学機械的研磨を実現するために、比較的大きな異形粒子を含む砥粒であって、質量当たりの砥粒個数が多く、研磨性能を低下させるような粗大粒子をできるだけ含まず、更に砥粒残りの原因となるような比較的小さい粒子をできるだけ含まない砥粒が望まれる。
Further, the particles having a relatively small particle size, regardless of whether they are spherical particles or irregularly shaped particles, tend to have a low polishing rate because the amount of polishing of one abrasive grain is small. Further, in the case of particles having a relatively small particle size, abrasive grains tend to remain on the substrate after polishing (this is called "abrasive grain residue"). This abrasive grain residue tends to be difficult to remove even in the cleaning step after polishing. This tendency is also seen in the deformed particles having a relatively large average particle size, and it seems that the tail of the particle size distribution spreads to the small particle size side even in the deformed particles having a relatively large average particle size. It can be said that the irregularly shaped particles having a uniform distribution are likely to generate abrasive grain residues.
Therefore, in order to realize suitable chemical mechanical polishing that achieves both high polishing speed and high surface accuracy, the abrasive grains contain relatively large irregularly shaped particles, and the number of abrasive grains per mass is large, resulting in reduced polishing performance. Abrasive grains that do not contain as much coarse particles as possible and that contain as little as possible relatively small particles that cause residual abrasive grains are desired.

しかしながら、水ガラスを原料として核生成時にシリカ粒子を凝集させる方法では、比表面積換算粒子径が100nm以上の異形シリカ粒子を得ることは困難であった。さらに、この方法では、核生成時のシリカ粒子凝集工程において、一部の核粒子が暴走反応を生じ、粗大な凝集体が生じてしまう可能性があり、この粗大な凝集体がスクラッチの原因となるという問題があった。また、この方法で得られるような比表面積換算粒子径100nm以下の異形シリカ粒子をシード粒子として用い、このシード粒子に珪酸液を添加して粒子径を大きく成長させる方法では、比表面積換算粒子径が100nm以上となるように珪酸液を使用して粒子を成長させると、シード粒子は球状または略球状に成長するため、異形のシード粒子を異形のまま成長させて比較的大きな異形シリカ粒子を得ることは困難であった。 However, it has been difficult to obtain irregularly shaped silica particles having a specific surface area equivalent particle diameter of 100 nm or more by the method of aggregating silica particles during nucleation using water glass as a raw material. Further, in this method, in the silica particle agglutination step at the time of nucleation, some nuclei particles may cause a runaway reaction to generate coarse agglutinations, and these coarse agglutinations cause scratches. There was a problem of becoming. Further, in a method in which irregular silica particles having a specific surface area equivalent particle diameter of 100 nm or less as obtained by this method are used as seed particles and a silicic acid solution is added to the seed particles to grow a large particle size, the specific surface area equivalent particle size is obtained. When the particles are grown using a silicic acid solution so that the particle size is 100 nm or more, the seed particles grow spherically or substantially spherically. Therefore, the deformed seed particles are grown in a deformed state to obtain relatively large deformed silica particles. It was difficult.

さらに、本発明者らは、異形シリカ粒子を含むシリカ粒子群を調製する別の方法として、湿式シリカを粉砕することにより異形シリカ粒子を得る方法を検討したところ、異形シリカ粒子は得られたものの、ゲル構造の湿式シリカは、粉砕あるいは解砕によって粒子径や粒度分布制御を行うにはその粒子強度が強いため、例えば、解砕処理により係る制御をする場合は、比較的長時間に渡って、強い解砕条件で処理を進める必要があるため、結果として粒子の異形度は低下する傾向にあった。また、この様にして得られた異形度が低い多孔質シリカゲルを研磨用砥粒として用いると、多孔質であるため、研磨速度が著しく低い研磨砥粒しか得られなかった。また、得られた異形度の低い多孔質シリカゲルをシードとして、珪酸などで粒子成長させ、表面及び内部細孔をシリカで補強して粒子強度を向上させる方法もあるが、本発明者らが検討したところ、粒子成長によりさらに異形度が低下するため、十分な研磨速度は得られなかった。 Furthermore, the present inventors investigated a method for obtaining deformed silica particles by pulverizing wet silica as another method for preparing a group of silica particles containing deformed silica particles, and found that the deformed silica particles were obtained. , Wet silica with a gel structure has strong particle strength to control the particle size and particle size distribution by crushing or crushing. Therefore, for example, when controlling by crushing treatment, it takes a relatively long time. Since it is necessary to proceed with the treatment under strong crushing conditions, the degree of deformation of the particles tends to decrease as a result. Further, when the porous silica gel having a low degree of deformation thus obtained was used as the abrasive grains for polishing, only the abrasive grains having a remarkably low polishing rate could be obtained because they were porous. Further, there is also a method of growing particles with silicic acid or the like using the obtained porous silica gel having a low degree of deformation as a seed and reinforcing the surface and internal pores with silica to improve the particle strength. As a result, a sufficient polishing rate could not be obtained because the degree of deformation was further reduced due to particle growth.

そこで本発明は、研磨用途に適用した場合、例えば、シリカ系基板あるいはNiPメッキされた被研磨基板等に対して、高い研磨速度及び高面精度を達成することが可能なシリカ系粒子群(比較的大きな異形粒子を含む砥粒であって、特定の粒子径分布を示し、必要な粒子強度および異形度を有する異形粒子を含むシリカ系粒子群)と、このシリカ系粒子群を含むシリカ系粒子分散液及びこのシリカ系粒子群の製造方法を提供することを目的とする。 Therefore, when the present invention is applied to a polishing application, for example, a silica-based particle group capable of achieving high polishing speed and high surface accuracy with respect to a silica-based substrate, a NiP-plated substrate to be polished, or the like (comparison). Silica-based particles (silica-based particle group including irregular-shaped particles having a specific particle size distribution and required particle strength and degree of deformation) and silica-based particles containing this silica-based particle group. It is an object of the present invention to provide a dispersion liquid and a method for producing the silica-based particle group.

本発明者は上記課題を解決するため、シード粒子として、従来の水ガラスから得られた比表面積が比較的大きく、一次粒子径が比較的小さな異形シード粒子に代えて、比表面積が比較的小さく、一次粒子径が比較的大きなシリカ系ゲルを特定の条件で解砕し得られた高異形シリカ系ゲルからなる粒子を用い、さらに、珪酸液を加えて該シード粒子を成長させる方法を検討した。この高異形シリカ系ゲルからなる粒子は、シリカ系ゲルをアルカリ性下で湿式解砕して得られたものであり、また、粗大粒子が殆ど無く、比較的粒度の揃ったものである。さらに、原料のシリカ系ゲルは比表面積が比較的小さく、一次粒子径が比較的大きいため、シリカ系ゲルからなる粒子の強度が弱く、易解砕であるため、原料シリカ系ゲルの構造に由来した高い異形度が保持されたものである。 In order to solve the above problems, the present inventor has a relatively small specific surface area as seed particles, instead of a deformed seed particle having a relatively large specific surface area and a relatively small primary particle size. , A method of growing seed particles by adding a silicic acid solution to particles made of highly deformed silica-based gel obtained by crushing a silica-based gel having a relatively large primary particle size under specific conditions was investigated. .. The particles made of the highly deformed silica-based gel are obtained by wet-crushing the silica-based gel under alkaline conditions, and have almost no coarse particles and have a relatively uniform particle size. Furthermore, since the raw material silica-based gel has a relatively small specific surface area and a relatively large primary particle size, the strength of the particles made of the silica-based gel is weak and easy to crush, so that it is derived from the structure of the raw material silica-based gel. The high degree of deformation is maintained.

このような高異形シリカ系ゲルからなる粒子をシード粒子として用い、珪酸液の共存下でシード粒子を成長させることにより、珪酸はシード粒子の一次粒子間の細孔(一次粒子間の凹部)から優先的に沈着する。ここでシード粒子の一次粒子径は比較的大きいので、一次粒子間の細孔は、珪酸で完全に埋まることができる。このため、粒子強度が強く、かつ高い異形度を保ったまま粒子成長させることができたものと推察される。
また、原料シリカゲル粒子として比表面積が比較的小さく、一次粒子径が比較的大きなシリカ系ゲルからなる粒子を用いているので、易解砕であるため、解砕時に粗大粒子が優先的に解砕され粗大粒子を殆ど含まない。このシリカ系粒子群を砥粒として使用することで、研磨速度が比較的高く、且つ研磨面上でのスクラッチの発生を大幅に抑制し、表面粗さやうねりが小さい研磨面が得られることを見出した。
By using particles made of such a highly deformed silica-based gel as seed particles and growing the seed particles in the coexistence of a silicic acid solution, silicic acid is released from the pores (recesses between the primary particles) between the primary particles of the seed particles. Priority is deposited. Since the primary particle size of the seed particles is relatively large here, the pores between the primary particles can be completely filled with silicic acid. Therefore, it is presumed that the particles could be grown while maintaining a high particle strength and a high degree of deformation.
In addition, since the raw material silica gel particles are made of silica gel having a relatively small specific surface area and a relatively large primary particle size, they are easily crushed, so that the coarse particles are preferentially crushed at the time of crushing. It contains almost no coarse particles. It was found that by using this silica-based particle group as abrasive grains, a polished surface having a relatively high polishing rate, significantly suppressing the occurrence of scratches on the polished surface, and having a small surface roughness and waviness can be obtained. It was.

前記知見に基づき、本発明者は、研磨材として好適な粒子径、粒子径分布、異形度および粒子強度を有する異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群、これを含むシリカ系粒子分散液、およびこのシリカ系粒子群を効率よく製造する方法である本発明を完成させた。
本発明は以下の(1)〜(13)である。
Based on the above findings, the present inventor has a group of silica-based particles composed of deformed silica-based particles and non-deformed silica-based particles having a particle size, particle size distribution, irregularity and particle strength suitable as an abrasive, and silica containing the same. The present invention, which is a method for efficiently producing a system-based particle dispersion and the silica-based particle group, has been completed.
The present invention is the following (1) to (13).

(1)異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群を含むシリカ系粒子分散液であって、
前記シリカ系粒子群は下記[1]〜[3]を満たすシリカ系粒子分散液。
[1] 重量平均粒子径(D1)が60〜400nmであり、比表面積換算粒子径(D2)が20〜300nmであること。
[2] 重量平均粒子径(D1)と投影面積相当粒子径(D3)との比で表される異形度D(D=D1/D3)が1.1〜5.0の範囲にあること。
[3] 体積基準粒子径分布を波形分離すると、分離ピークが3つ以上検出される多峰分布となること。
(2)前記シリカ系粒子群が、その体積基準粒子径分布において、歪度が−20〜20の範囲にあることを特徴とする上記(1)に記載のシリカ系粒子分散液。
(3)前記シリカ系粒子群の体積基準粒子径分布を波形分離した結果得られた分離ピークのうち、最大粒子成分の体積割合が75%以下であることを特徴とする上記(1)または(2)の何れかに記載のシリカ系粒子分散液。
(4)前記シリカ系粒子群のSEM画像解析により得られる個数基準粒子径分布において、小粒子側成分のアスペクト比が1.05〜5.0の範囲にあることを特徴とする上記(1)〜(3)の何れかに記載のシリカ系粒子分散液。
(5)前記シリカ系粒子群の体積基準粒子径分布の粒子径の変動係数が30%以上であることを特徴とする上記(1)〜(4)の何れかに記載のシリカ系粒子分散液。
(6)前記シリカ系粒子群における、画像解析法による平均面積(S1)に対する画像解析法による平均外周長と等価な円の面積(S2)の比であらわされる平滑度S(S=S2/S1)が1.1〜5.0の範囲にあることを特徴とする上記(1)〜(5)の何れかに記載のシリカ系粒子分散液。
(7)前記シリカ系粒子群の体積基準粒子径分布において、全体積(Q1)に対する0.7μm以上の粒子の体積(Q2)の割合Q(Q=Q2/Q1)が5.0%以下であることを特徴とする上記(1)〜(6)の何れかに記載のシリカ系粒子分散液。
(8)上記(1)〜(7)の何れかに記載のシリカ系粒子分散液を含む研磨用砥粒分散液。
(9)異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群であって、
下記[1]〜[3]を満たすシリカ系粒子群。
[1] 重量平均粒子径(D1)が60〜400nmであり、比表面積換算粒子径(D2)が20〜300nmであること。
[2] 重量平均粒子径(D1)と投影面積相当粒子径(D3)との比で表される異形度D(D=D1/D3)が1.1〜5.0の範囲にあること。
[3] 体積基準粒子径分布を波形分離すると、分離ピークが3つ以上検出される多峰分布となること。
(1) A silica-based particle dispersion liquid containing a silica-based particle group composed of deformed silica-based particles and non-deformed silica-based particles.
The silica-based particle group is a silica-based particle dispersion liquid satisfying the following [1] to [3].
[1] The weight average particle size (D 1 ) is 60 to 400 nm, and the specific surface area equivalent particle size (D 2 ) is 20 to 300 nm.
[2] The degree of deformation D (D = D 1 / D 3 ) represented by the ratio of the weight average particle diameter (D 1 ) to the projected area equivalent particle diameter (D 3 ) is in the range of 1.1 to 5.0. To be in.
[3] When the volume-based particle size distribution is waveform-separated, it becomes a multi-peak distribution in which three or more separation peaks are detected.
(2) The silica-based particle dispersion liquid according to (1) above, wherein the silica-based particle group has a skewness in the range of -20 to 20 in its volume-based particle size distribution.
(3) Of the separation peaks obtained as a result of waveform-separating the volume-based particle size distribution of the silica-based particle group, the volume ratio of the maximum particle component is 75% or less. The silica-based particle dispersion liquid according to any one of 2).
(4) The aspect ratio of the small particle side component is in the range of 1.05 to 5.0 in the number-based particle size distribution obtained by SEM image analysis of the silica-based particle group (1). The silica-based particle dispersion liquid according to any one of (3).
(5) The silica-based particle dispersion liquid according to any one of (1) to (4) above, wherein the variation coefficient of the particle size of the volume-based particle size distribution of the silica-based particle group is 30% or more. ..
(6) Smoothness S (S = S) represented by the ratio of the area of a circle (S 2 ) equivalent to the average outer peripheral length by the image analysis method to the average area (S 1 ) by the image analysis method in the silica-based particle group. The silica-based particle dispersion according to any one of (1) to (5) above, wherein 2 / S 1) is in the range of 1.1 to 5.0.
(7) In the volume basis particle size distribution of the silica particles, the volume of the total volume (Q 1) 0.7 [mu] m or more for the particle fraction of the (Q 2) Q (Q = Q 2 / Q 1) is 5. The silica-based particle dispersion liquid according to any one of (1) to (6) above, which is characterized by having a content of 0% or less.
(8) A polishing abrasive grain dispersion liquid containing the silica-based particle dispersion liquid according to any one of (1) to (7) above.
(9) A group of silica-based particles composed of deformed silica-based particles and non-deformed silica-based particles.
A group of silica-based particles satisfying the following [1] to [3].
[1] The weight average particle size (D 1 ) is 60 to 400 nm, and the specific surface area equivalent particle size (D 2 ) is 20 to 300 nm.
[2] The degree of deformation D (D = D 1 / D 3 ) represented by the ratio of the weight average particle diameter (D 1 ) to the projected area equivalent particle diameter (D 3 ) is in the range of 1.1 to 5.0. To be in.
[3] When the volume-based particle size distribution is waveform-separated, it becomes a multi-peak distribution in which three or more separation peaks are detected.

(10)下記工程a〜cを含むことを特徴とする異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の製造方法。
(工程a)シリカ系ゲルをアルカリ性下で湿式解砕して、高異形シリカ系ゲルからなる粒子を含む溶液にする工程。
(工程b)前記高異形シリカ系ゲルからなる粒子を含む溶液にアルカリ性下で珪酸液を添加して加温し、前記高異形シリカ系ゲルからなる粒子の一次粒子間の細孔を前記珪酸液に含まれる珪酸との反応によって埋めながら高い異形度のまま粒子を成長させて異形シリカ系粒子にする工程。
(工程c)成長した前記異形シリカ系粒子を含むシリカ系粒子群を濃縮して、回収する工程。
(11)前記工程aにおいて、比表面積50〜600m2/gの前記シリカ系ゲルを重量平均粒子径60〜250nmの前記高異形シリカ系ゲルからなる粒子にし、
前記工程bにおいて、前記高異形シリカ系ゲルからなる粒子の一次粒子間の細孔を前記珪酸との反応によって埋めて前記高異形シリカ系ゲルからなる粒子の比表面積を136m2/g以下にすると共に、重量平均粒子径60〜400nmの前記異形シリカ系粒子に成長させることを特徴とする上記(10)に記載の異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の製造方法。
(12)前記工程aにおいて、前記シリカ系ゲルをpH8.0〜11.5のアルカリ性下で湿式解砕して前記高異形シリカ系ゲルからなる粒子を含む溶液にし、
前記工程bにおいて、前記高異形シリカ系ゲルからなる粒子を含む溶液のSiO2濃度を1〜10質量%にし、60℃〜170℃に加温し、pH9〜12.5のアルカリ性下で、前記珪酸液を連続的または断続的に添加して、前記高異形シリカ系ゲルからなる粒子の一次粒子間の細孔を珪酸との反応によって埋めて該粒子の比表面積を減少させると共に、粒子を高い異形度のまま成長させ、
前記工程cにおいて、成長した前記異形シリカ系粒子を含む溶液を濃縮して該異形シリカ系粒子を含むシリカ系粒子群を回収することを特徴とする上記(10)または(11)に記載の異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の製造方法。
(13)前記工程bにおいて、前記珪酸液の添加量が、前記高異形シリカ系ゲルからなる粒子を含む溶液のSiO2モル濃度に対して該珪酸液のSiO2モル濃度が0.5〜20モル倍になる範囲であることを特徴とする上記(10)〜(12)の何れかに記載の異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の製造方法。
(10) A method for producing a silica-based particle group composed of deformed silica-based particles and non-deformed silica-based particles, which comprises the following steps a to c.
(Step a) A step of wet-crushing a silica-based gel under alkaline conditions to obtain a solution containing particles composed of a highly deformed silica-based gel.
(Step b) A silicic acid solution is added to a solution containing particles made of the highly deformed silica gel under alkaline conditions to heat the solution, and the pores between the primary particles of the particles made of the highly deformed silica gel are formed in the silicic acid solution. A step of growing particles with a high degree of deformity while filling them by reaction with silicic acid contained in the above to make them into deformed silica-based particles.
(Step c) A step of concentrating and recovering a group of silica-based particles containing the grown irregular silica-based particles.
(11) In the step a, the silica-based gel having a specific surface area of 50 to 600 m 2 / g is made into particles composed of the highly deformed silica-based gel having a weight average particle diameter of 60 to 250 nm.
In the step b, the pores between the primary particles of the particles made of the highly deformed silica gel are filled by the reaction with the silicic acid to reduce the specific surface area of the particles made of the highly deformed silica gel to 136 m 2 / g or less. The method for producing a silica-based particle group composed of the deformed silica-based particles and the non-deformed silica-based particles according to the above (10), which is characterized in that the silica-based particles are grown into the deformed silica-based particles having a weight average particle diameter of 60 to 400 nm.
(12) In the step a, the silica-based gel is wet-crushed under alkalinity of pH 8.0 to 11.5 to prepare a solution containing particles composed of the highly deformed silica-based gel.
In the step b, the SiO 2 concentration of the solution containing the particles of the highly deformed silica-based gel is adjusted to 1 to 10% by mass, heated to 60 ° C to 170 ° C, and under alkaline pH of 9 to 12.5. Silicic acid solution is added continuously or intermittently to fill the pores between the primary particles of the particles made of the highly deformed silica-based gel by reaction with silicic acid to reduce the specific surface area of the particles and increase the particles. Grow with a deformed degree,
The variant according to (10) or (11) above, wherein in the step c, the solution containing the grown irregular silica-based particles is concentrated to recover the silica-based particle group containing the deformed silica-based particles. A method for producing a group of silica-based particles composed of silica-based particles and non-amorphous silica-based particles.
(13) in said step b, the addition amount of the silicic acid solution is, SiO 2 molar該珪acid liquid to SiO 2 molar concentration of the solution containing the particles consisting of the high profiled silica gel 0.5-20 The method for producing a silica-based particle group consisting of a deformed silica-based particle and a non-deformed silica-based particle according to any one of (10) to (12) above, which is characterized in a range of molar doubling.

本発明の異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群は、研磨材として好適な粒子径、粒子径分布、異形度および粒子強度を有しているので、これを含むシリカ系粒子分散液を、例えば研磨用砥粒分散液として使用した場合、あるいはこの研磨用砥粒分散液をそのまま研磨スラリーとして使用した場合、対象がNiPメッキされた被研磨被膜およびシリカ系基板であっても、高速で研磨することができ、砥粒の基材への突き刺さりが無く、同時に高面精度(スクラッチが少ない、被研磨基板の表面粗さ(Ra)やうねり(Wa)が小さいなど)を達成することができる。
また本発明の異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群は、その表面が平滑でなく、微小な突起を有しており、研磨時に発生する研磨屑やイオン成分、オリゴマー成分、有機物等を吸着するスカベンジャー効果も備えている。そのため、研磨基板へのこれらの成分の再付着を防止でき、残渣の少ない研磨表面を達成することができる。
The silica-based particle group composed of the deformed silica-based particles and the non-deformed silica-based particles of the present invention has a particle size, a particle size distribution, a degree of deformation, and a particle strength suitable as an abrasive. When the particle dispersion is used as, for example, an abrasive grain dispersion for polishing, or when this abrasive grain dispersion is used as it is as a polishing slurry, the target is a NiP-plated film to be polished and a silica-based substrate. However, it can be polished at high speed, and the abrasive grains do not pierce the base material, and at the same time, it has high surface accuracy (less scratches, less surface roughness (Ra) and waviness (Wa) of the substrate to be polished, etc.). Can be achieved.
Further, the silica-based particle group composed of the deformed silica-based particles and the non-deformed silica-based particles of the present invention has a non-smooth surface and has minute protrusions, and polishing debris, ionic components, and oligomer components generated during polishing. It also has a scavenger effect that adsorbs organic substances. Therefore, reattachment of these components to the polishing substrate can be prevented, and a polishing surface with less residue can be achieved.

さらに、本発明の異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の製造方法では、シリカ系ゲルの外形調整を経た粒子をシード粒子として使用することによって、珪酸液を添加する工程においてこのシード粒子を高い異形度のまま大きく成長させることができ、また、粒子の強度も上げることができる。この結果、研磨材として好適な粒子径、粒子径分布、異形度および粒子強度を有する異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群を効率的に得ることができる。 Further, in the method for producing a silica-based particle group composed of deformed silica-based particles and non-deformed silica-based particles of the present invention, a step of adding a silicic acid solution by using particles that have undergone outer shape adjustment of a silica-based gel as seed particles. In, the seed particles can be grown large with a high degree of deformation, and the strength of the particles can be increased. As a result, it is possible to efficiently obtain a silica-based particle group composed of deformed silica-based particles and non-deformed silica-based particles having a particle size, a particle size distribution, a degree of deformation, and a particle strength suitable as an abrasive.

粒子径分布における尖度の説明図Explanatory drawing of kurtosis in particle size distribution 粒子径分布における歪度の説明図Explanatory drawing of skewness in particle size distribution

本発明の異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群、およびこれを含むシリカ系粒子分散液について具体的に説明する。なお、本発明において「粒子群」の文言は、多数の粒子の集合を意味する。 The silica-based particle group composed of the deformed silica-based particles and the non-deformed silica-based particles of the present invention, and the silica-based particle dispersion liquid containing the same will be specifically described. In the present invention, the word "particle group" means a set of a large number of particles.

<重量平均粒子径(D1)>
本発明のシリカ系粒子群の重量平均粒子径(D)は60〜400nmであり、80〜350nmが好ましく、100〜300nmであることが最も好ましい。重量平均粒子径が60〜400nmの範囲にあるシリカ系粒子群を砥粒として用いた場合は、高い研磨速度を得ることができ、且つスクラッチが発生しにくい。なお、重量平均粒子径が60nm未満であるシリカ系粒子群を砥粒として用いた場合は、必要な研磨速度が得にくく、さらに小さな粒子が研磨後の基板に残留しやすい傾向にある。また、重量平均粒子径が400nm超であるシリカ系粒子群を砥粒として用いた場合は、スクラッチが発生しやすい傾向にあり、また重量平均粒子径をこれ以上大きくしても質量当たりの砥粒個数が減少するため、研磨速度が向上しない場合がある。
<Weight average particle size (D 1 )>
The weight average particle diameter (D 1 ) of the silica-based particle group of the present invention is 60 to 400 nm, preferably 80 to 350 nm, and most preferably 100 to 300 nm. When a silica-based particle group having a weight average particle diameter in the range of 60 to 400 nm is used as the abrasive grains, a high polishing rate can be obtained and scratches are less likely to occur. When a silica-based particle group having a weight average particle diameter of less than 60 nm is used as the abrasive grains, it is difficult to obtain the required polishing rate, and smaller particles tend to remain on the polished substrate. Further, when a silica-based particle group having a weight average particle diameter of more than 400 nm is used as the abrasive grains, scratches tend to occur, and even if the weight average particle diameter is made larger than this, the abrasive grains per mass. Since the number is reduced, the polishing speed may not be improved.

ここで、本発明において重量平均粒子径(D1)とは、測定対象であるシリカ系粒子分散液を0.05質量%ドデシル硫酸ナトリウム水溶液で希釈し、固形分濃度で2質量%としたものを、従来公知のディスク遠心式粒子径分布測定装置(例えば、CPS Instriment社製など)に0.1mlをシリンジで注入して、8%から24%のショ糖の密度勾配溶液中で18000rpmの条件で測定して得た重量基準粒子径分布から求める平均粒子径である。つまり、本発明においては、この重量平均粒子径は「重量換算粒子径分布の平均粒子径」を意味する。 Here, in the present invention, the weight average particle size (D 1 ) means that the silica-based particle dispersion to be measured is diluted with a 0.05 mass% sodium dodecyl sulfate aqueous solution to obtain a solid content concentration of 2 mass%. 0.1 ml was injected into a conventionally known disk centrifugal particle size distribution measuring device (for example, manufactured by CPS Institute) with a syringe, and the condition was 18000 rpm in a density gradient solution of 8% to 24% sucrose. It is an average particle size obtained from the weight-based particle size distribution obtained by measuring in. That is, in the present invention, this weight average particle size means "the average particle size of the weight conversion particle size distribution".

<比表面積換算粒子径(D2)>
本発明のシリカ系粒子群の比表面積換算粒子径(D2)は20〜300nmであり、25〜250nmが好ましく、30〜200nmであることがより好ましく、35〜150nmであることが最も好ましい。比表面積換算粒子径(D2)が20〜300nmの範囲にあるシリカ系粒子群を砥粒として用いた場合は、高い研磨速度を得ることができ、且つスクラッチが発生しにくい。なお、比表面積換算粒子径(D2)が20nm未満であるシリカ系粒子群を砥粒として用いた場合は、必要な研磨速度が得にくく、さらに小さな粒子が研磨後の基板に残留しやすい傾向にある。また、比表面積換算粒子径(D2)が300nm超であるシリカ系粒子群を砥粒として用いた場合は、スクラッチが発生したり研磨後の基板の表面粗さが悪化したりする傾向にある。さらに、比表面積換算粒子径をこれ以上大きくしても、質量当たりの砥粒個数が減少するため、逆に研磨速度が低下する傾向にある。
<Specific surface area equivalent particle size (D 2 )>
The specific surface area equivalent particle size (D 2 ) of the silica-based particle group of the present invention is 20 to 300 nm, preferably 25 to 250 nm, more preferably 30 to 200 nm, and most preferably 35 to 150 nm. When a silica-based particle group having a specific surface area equivalent particle diameter (D 2 ) in the range of 20 to 300 nm is used as the abrasive grains, a high polishing rate can be obtained and scratches are unlikely to occur. When a silica-based particle group having a specific surface area equivalent particle diameter (D 2 ) of less than 20 nm is used as the abrasive grains, it is difficult to obtain the required polishing rate, and smaller particles tend to remain on the polished substrate. It is in. Further, when a silica-based particle group having a specific surface area equivalent particle diameter (D 2 ) of more than 300 nm is used as abrasive grains, scratches tend to occur and the surface roughness of the substrate after polishing tends to deteriorate. .. Further, even if the specific surface area-equivalent particle size is made larger than this, the number of abrasive grains per mass decreases, so that the polishing rate tends to decrease.

なお、本発明において比表面積換算粒子径(D2)とは、比表面積換算の平均粒子径を意味し、BET法により測定される比表面積(SA:m2/g)と、粒子の密度(ρ)[シリカの場合ρ=2.2]を用い、D2=6000/(SA×ρ)の式から算出される。
ここでBET法とは、次のような方法である。
初めに、測定対象であるシリカゾル(シリカ系粒子分散液)50mlを硝酸によりpHを3.5に調整し、これに1−プロパノールを40ml加えて110℃で16時間乾燥した試料について、乳鉢で粉砕後、マッフル炉にて500℃、1時間焼成して測定用試料とする。そして、公知の比表面積測定装置(例えばユアサアイオニクス製、型番マルチソーブ12など)を使用し、窒素吸着法(BET法)を用いて窒素の吸着量からBET1点法により比表面積を算出する。比表面積測定装置では、焼成後の試料0.5gを測定セルに取り、窒素30vol%/ヘリウム70vol%混合ガス気流中、300℃で20分間脱ガス処理を行い、その上で試料を上記混合ガス気流中で液体窒素温度に保ち、窒素を試料に平衡吸着させる。次いで、上記混合ガスを流しながら試料温度を徐々に室温まで上昇させ、その間に脱離した窒素の量を検出し、予め作成した検量線により試料中のシリカ微粒子の比表面積(SA)を算出する。
In the present invention, the specific surface area-equivalent particle size (D 2 ) means the average surface area-equivalent particle size, and the specific surface area (SA: m 2 / g) measured by the BET method and the particle density (D 2). ρ) Using [in the case of silica, ρ = 2.2], it is calculated from the formula of D 2 = 6000 / (SA × ρ).
Here, the BET method is the following method.
First, the pH of 50 ml of the silica sol (silica particle dispersion) to be measured was adjusted to 3.5 with nitric acid, 40 ml of 1-propanol was added thereto, and the sample dried at 110 ° C. for 16 hours was pulverized in a mortar. After that, it is fired in a muffle furnace at 500 ° C. for 1 hour to prepare a sample for measurement. Then, using a known specific surface area measuring device (for example, manufactured by Yuasa Ionics, model number Multisorb 12, etc.), the specific surface area is calculated from the amount of nitrogen adsorbed by the BET 1-point method using the nitrogen adsorption method (BET method). In the specific surface area measuring device, 0.5 g of the fired sample is taken in a measuring cell, degassed in a mixed gas stream of 30 vol% nitrogen / 70 vol% helium at 300 ° C. for 20 minutes, and then the sample is subjected to the above mixed gas. The temperature is maintained at the liquid nitrogen temperature in the air stream, and the nitrogen is adsorbed to the sample in equilibrium. Next, the sample temperature is gradually raised to room temperature while flowing the mixed gas, the amount of nitrogen desorbed during that period is detected, and the specific surface area (SA) of the silica fine particles in the sample is calculated from a calibration curve prepared in advance. ..

また、シリカ系粒子群の比表面積が高い場合には、BET法における焼成時に焼結が進むため、その比表面積(SA)が100m2/g以上となる場合には、タイトレーション法により比表面積(SA)を求める。
ここでタイトレーション法とは、次のような方法である。
まず初めに、SiO2として1.5gに相当する試料をビーカーに採取してから、恒温反応槽(25℃)に移し、純水を加えて液量を90mlにする(以下の操作は、25℃に保持した恒温反応槽中にて行う)。次に、pH3.6になるように0.1モル/L塩酸水溶液をここに加える。さらに、塩化ナトリウムを30g加え、純水で150mlに希釈し、10分間攪拌する。そして、pH電極をセットし、攪拌しながら0.1モル/L水酸化ナトリウム溶液を滴下してpH4.0に調整する。さらに、pH4.0に調整した試料を0.1モル/L水酸化ナトリウム溶液で滴定し、pH8.7〜9.3の範囲での滴定量とpH値を4点以上記録して、0.1モル/L水酸化ナトリウム溶液の滴定量をX、その時のpH値をYとして、検量線を作る。そして、V=(A×f×100×1.5)/(W×C)の式からSiO21.5g当たりのpH4.0〜9.0までに要する0.1モル/L水酸化ナトリウム溶液の消費量V(ml)を求め、これを用いて、SA=29.0V−28の式に従って比表面積を求める。
なお、上記式中において、AはSiO21.5g当たりpH4.0〜9.0までに要する0.1モル/L水酸化ナトリウム溶液の滴定量(ml)、fは0.1モル/L水酸化ナトリウム溶液の力価、Cは試料のSiO2濃度(%)、Wは試料採取量(g)を 意味する。
Further, when the specific surface area of the silica-based particle group is high, sintering proceeds during firing in the BET method. Therefore, when the specific surface area (SA) is 100 m 2 / g or more, the specific surface area is determined by the titration method. Find (SA).
Here, the titration method is the following method.
First, a sample corresponding to 1.5 g of SiO 2 is collected in a beaker, then transferred to a constant temperature reaction tank (25 ° C.), and pure water is added to bring the liquid volume to 90 ml (the following operation is 25). Perform in a constant temperature reaction vessel kept at ° C). Next, a 0.1 mol / L hydrochloric acid aqueous solution is added here so as to have a pH of 3.6. Further, 30 g of sodium chloride is added, diluted with pure water to 150 ml, and stirred for 10 minutes. Then, the pH electrode is set, and a 0.1 mol / L sodium hydroxide solution is added dropwise with stirring to adjust the pH to 4.0. Further, the sample adjusted to pH 4.0 was titrated with a 0.1 mol / L sodium hydroxide solution, and the titration amount in the range of pH 8.7 to 9.3 and the pH value were recorded at 4 points or more. A titration line is prepared by setting the titration amount of 1 mol / L sodium hydroxide solution to X and the pH value at that time to Y. Then, from the formula of V = (A × f × 100 × 1.5) / (W × C), 0.1 mol / L sodium hydroxide required from pH 4.0 to 9.0 per 1.5 g of SiO 2 The consumption amount V (ml) of the solution is determined, and using this, the specific surface area is determined according to the formula of SA = 29.0V-28.
In the above formula, A is a titration amount (ml) of 0.1 mol / L sodium hydroxide solution required for pH 4.0 to 9.0 per 1.5 g of SiO 2, and f is 0.1 mol / L. The titer of the sodium hydroxide solution, C means the SiO 2 concentration (%) of the sample, and W means the sampling amount (g).

<異形度>
異形度は、前述の重量平均粒子径(D1)を、投影面積相当粒子径(D3)で割ることによって表わされる。なお、投影面積相当粒子径(D3)とは、次のような方法により測定、算出されたものである。まず、走査型電子顕微鏡(SEM)を用いて、シリカ系粒子表面の任意の箇所を、倍率3000倍で1視野当たり1.1×10-3mm2の面積で15視野撮影する。そして、この各視野において撮影された個々の画像に含まれる全てのシリカ微粒子について、画像解析システムを用いた画像解析法によって個々の粒子の投影面積を測定し、この測定された各面積に相当する円形の粒子の粒子径(円の直径)を算出し、これらの個数平均(算術平均径)を投影面積相当粒子径(D3)とする。
本発明のシリカ系粒子群は、異形度D(D=D1/D3)が1.1〜5.0の範囲であり、1.1〜4.0の範囲が好ましく、1.1〜3.5の範囲がより好ましい。異形度が高いシリカ系粒子群とは、すなわち粒子群の平均アスペクト比(「最小外接四角の長径/短径比」の平均値)が高い事を示しており、この平均アスペクト比が高い場合、研磨時にはおもに粒子の長径において基板と接触し、基板との接触面積が高くなり、研磨速度が高くなるため好ましいが、この異形度が5.0超の場合は、これ以上異形度を高めても研磨速度は向上せず、さらにスクラッチやうねりが発生しやすい傾向にある。また、この異形度が1.1未満の場合は、粒子の形状が真球状に近い形状であることを示しており、そのようなシリカ系粒子群を含むシリカ系粒子分散液を用いて研磨を行った場合、研磨速度が低下する傾向にある。
なお、ここでアスペクト比は粒子が内接する長方形・正方形の中で最も面積が小さいものにおける、長辺と短辺の比(長辺/短辺)を意味する。また、平均アスペクト比は、一定数以上の粒子のアスペクト比の単純平均値を意味する。
<Degree of deformity>
The degree of deformation is expressed by dividing the above-mentioned weight average particle size (D 1 ) by the particle size corresponding to the projected area (D 3). The particle size corresponding to the projected area (D 3 ) is measured and calculated by the following method. First, using a scanning electron microscope (SEM), an arbitrary portion of the surface of silica-based particles is photographed in 15 fields with an area of 1.1 × 10 -3 mm 2 per field at a magnification of 3000 times. Then, for all the silica fine particles contained in the individual images taken in each of the visual fields, the projected area of each particle is measured by an image analysis method using an image analysis system, and corresponds to each of the measured areas. The particle size (circle diameter) of the circular particles is calculated, and the number average (arithmetic average diameter) of these particles is defined as the projected area equivalent particle size (D 3 ).
The silica-based particle group of the present invention has a degree of deformation D (D = D 1 / D 3 ) in the range of 1.1 to 5.0, preferably in the range of 1.1 to 4.0, and 1.1 to 4.0. The range of 3.5 is more preferable. A silica-based particle group having a high degree of deformation means that the average aspect ratio of the particle group (the average value of the "major axis / minor axis ratio of the minimum circumscribing square") is high, and when this average aspect ratio is high, At the time of polishing, it is preferable because it comes into contact with the substrate mainly on the major axis of the particles, the contact area with the substrate becomes high, and the polishing speed becomes high. The polishing speed does not improve, and scratches and waviness tend to occur. Further, when the degree of deformation is less than 1.1, it indicates that the shape of the particles is close to a spherical shape, and polishing is performed using a silica-based particle dispersion liquid containing such a silica-based particle group. If done, the polishing rate tends to decrease.
Here, the aspect ratio means the ratio of the long side to the short side (long side / short side) in the rectangle / square inscribed by the particles, which has the smallest area. Further, the average aspect ratio means a simple average value of the aspect ratios of a certain number of particles or more.

本発明に係る「異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群を含むシリカ系粒子分散液に含まれる、異形シリカ系粒子の割合は、前記[1]、[2]及び[3]の要件を満たす限り、格別に制限されるものではないが、アスペクト比が1.1以上の異形シリカ系粒子の個数が全体(前記シリカ系粒子群)に占める割合として、30%以上が好ましく、更に好ましくは40%以上が推奨される。
なお、アスペクト比が1.1以上である異形シリカ系粒子の個数割合の測定方法は、後述する実施例に示す通りである。
The proportions of the deformed silica-based particles contained in the silica-based particle dispersion liquid containing the silica-based particle group composed of the deformed silica-based particles and the non-deformed silica-based particles according to the present invention are the above-mentioned [1], [2] and [ As long as the requirements of 3] are satisfied, the number of irregular silica-based particles having an aspect ratio of 1.1 or more accounts for 30% or more of the total (the silica-based particle group), although it is not particularly limited. Preferably, more preferably 40% or more is recommended.
The method for measuring the number ratio of the deformed silica-based particles having an aspect ratio of 1.1 or more is as shown in Examples described later.

<尖度>
本発明のシリカ系粒子群の体積基準粒子径分布における尖度は−20〜20であることが好ましく、−10〜10がより好ましく、−5〜3が最も好ましい。尖度がこの範囲であるシリカ系粒子群を砥粒として用いた場合は、より高い研磨速度を得ることができ、且つ研磨後においてより平滑な(表面粗さ(Ra)が小さく、基板のうねり(Wa)も小さく、スクラッチが少ない)表面の基板を得ることができる。
<Kurtosis>
The kurtosis in the volume-based particle size distribution of the silica-based particle group of the present invention is preferably -20 to 20, more preferably -10 to 10, and most preferably -5 to 3. When a silica-based particle group having a kurtosis in this range is used as the abrasive grains, a higher polishing rate can be obtained, and after polishing, the surface is smoother (the surface roughness (Ra) is small and the waviness of the substrate is small). A substrate having a surface (with small Wa) and few scratches) can be obtained.

ここで尖度とは、粒子の形状や大きさには関係なく、粒子径分布からのみ算出されるものであり、尖度がゼロ(正規分布)に近い場合は、正規分布に近い粒子径分布であることを示している。また尖度がゼロよりも大きな値を取る粒子径分布は、ピークの中央が正規分布と比較して尖り、分布の裾の左右が広がった分布である事を示し(図1(a))、尖度がゼロよりも小さな値を示す粒子径分布は、ピークが平坦で分布の裾の左右が広がっていない形状である事を示している(図1(b))。 Here, the kurtosis is calculated only from the particle size distribution regardless of the shape and size of the particles, and when the kurtosis is close to zero (normal distribution), the particle size distribution is close to the normal distribution. It shows that. The particle size distribution in which the kurtosis is larger than zero indicates that the center of the peak is sharper than the normal distribution and the left and right sides of the tail of the distribution are wider (Fig. 1 (a)). The particle size distribution in which the kurtosis is smaller than zero indicates that the peak is flat and the left and right sides of the hem of the distribution are not widened (FIG. 1 (b)).

本発明においては、シリカ系粒子群の体積基準粒子径分布における尖度は、負の値でも構わない。尖度が負の場合は、ピークが平坦で分布の左右の小粒子および大粒子成分が少なく、ピークが平坦な比較的粒度の揃った粒子径分布であることを示している。このような小粒子成分および大粒子成分が少ないシリカ系粒子群を砥粒として用いた場合、砥粒残りも少なく研磨速度も高いため、好ましい。 In the present invention, the kurtosis in the volume-based particle size distribution of the silica-based particle group may be a negative value. When the kurtosis is negative, it indicates that the peak is flat, the left and right small particle and large particle components of the distribution are few, and the peak is flat and the particle size distribution is relatively uniform. When such a silica-based particle group having a small amount of small particle components and a small amount of large particle components is used as the abrasive grains, it is preferable because the amount of abrasive grains remaining is small and the polishing rate is high.

<歪度>
本発明のシリカ系粒子群の体積基準粒子径分布における歪度は−20〜20であることが好ましく、−15〜15がより好ましく、−10〜10が最も好ましい。歪度がこの範囲であるシリカ系粒子群を砥粒として用いた場合は、より高い研磨速度を得ることができ、且つ研磨後においてより平滑な(表面粗さ(Ra)が小さく、基板のうねり(Wa)も小さく、スクラッチが少ない)表面の基板を得ることができる。
<Skewness>
The skewness in the volume-based particle size distribution of the silica-based particle group of the present invention is preferably -20 to 20, more preferably -15 to 15, and most preferably -10 to 10. When a silica-based particle group having a skewness in this range is used as the abrasive grains, a higher polishing rate can be obtained, and after polishing, the surface is smoother (the surface roughness (Ra) is small and the waviness of the substrate is small). A substrate having a surface (with small Wa) and few scratches) can be obtained.

ここで歪度とは、尖度と同様に粒子の形状や大きさには関係なく、粒子径分布からのみ算出されるものであり、歪度がゼロに近い場合は正規分布に近い粒子径分布であることを示している。また歪度がゼロよりも大きな値を取る粒子径分布は、分布の左側(粒子径が小さい側)にピークを有し、右に裾の長い分布である事を示している(図2(a))のに対し、歪度がゼロよりも小さな値を取る粒子径分布は、分布の右側(粒子径が大きい側)にピークを有して、左に裾の長い分布である事を示している(図2(b))。 Here, the skewness is calculated only from the particle size distribution regardless of the shape and size of the particles like the kurtosis, and when the skewness is close to zero, the particle size distribution is close to the normal distribution. It shows that. The particle size distribution in which the skewness is larger than zero has a peak on the left side (smaller particle size side) of the distribution and has a long tail on the right side (Fig. 2 (a)). )) On the other hand, the particle size distribution in which the skewness is smaller than zero has a peak on the right side of the distribution (the side with the larger particle size), indicating that the distribution has a long tail on the left. (Fig. 2 (b)).

通常、解砕および粉砕法によって得たシリカ系粒子群の体積基準粒子径分布における歪度は正の値を取る事が多く、ビルドアップ法で得た粒子は正規分布となり易いことから歪度はゼロに近い値を取る事が多い。歪度が正の場合の粒子径分布は、粒子径がやや小さめの位置にピークがあり、大粒子径側に裾が広い分布である。このように小粒子径側にピークがある粒子径分布を有するシリカ系粒子群を砥粒として使用すると、粒子径が小さめの成分が多いため、研磨後に平滑な表面が得られやすい傾向にある。一方で歪度が著しく大きなシリカ系粒子群は、大粒子径側に裾が大きく広がった粒子径分布となり、平均粒子径にもよるが、砥粒として使用すると、スクラッチが発生しやすい傾向にある。 Usually, the skewness in the volume-based particle size distribution of the silica-based particle group obtained by the crushing and crushing methods often takes a positive value, and the skewness is likely to be a normal distribution for the particles obtained by the build-up method. It often takes a value close to zero. When the skewness is positive, the particle size distribution has a peak at a position where the particle size is slightly smaller and a wide tail on the large particle size side. When a silica-based particle group having a particle size distribution having a peak on the small particle size side is used as an abrasive grain, since many components have a small particle size, a smooth surface tends to be easily obtained after polishing. On the other hand, the silica-based particle group having a remarkably large skewness has a particle size distribution in which the hem is greatly widened on the large particle size side, and although it depends on the average particle size, scratches tend to occur easily when used as abrasive grains. ..

本発明においては、シリカ系粒子群の体積基準粒子径分布における歪度は、負の値であっても構わない。歪度が負の値のシリカ系粒子群は、粒子径が大きめの位置にピークがあり、小粒子側に裾が広がった粒子径分布となるが、粒子径分布の大粒子側のきれが良いため(すなわち著しい大粒子が少ないため)、砥粒として使用してもスクラッチは発生しにくい。しかし歪度が−20よりも小さいシリカ系粒子群は、小粒子側の裾が広くなり過ぎた粒子径分布となり、小粒子成分が増えるため、砥粒として使用すると砥粒残りが発生する傾向にある。 In the present invention, the skewness in the volume-based particle size distribution of the silica-based particle group may be a negative value. The silica-based particle group having a negative skewness has a peak at a position where the particle size is large and has a particle size distribution in which the hem is widened on the small particle side, but the particle size distribution is sharp on the large particle side. Therefore (that is, there are few remarkably large particles), scratches are unlikely to occur even when used as abrasive grains. However, in the silica-based particle group having a skewness smaller than -20, the hem on the small particle side becomes too wide and the particle size distribution increases, and the small particle component increases. Therefore, when used as abrasive grains, abrasive grain residue tends to occur. is there.

<体積基準粒子径分布の測定および尖度・歪度の算出方法>
本発明では、シリカ系粒子群の体積基準粒子径分布を遠心沈降法によって測定する。例えば、シリカ系粒子分散液を0.05質量%ドデシル硫酸ナトリウム水溶液で希釈し、固形分濃度で2質量%に調整し、公知のディスク遠心式粒子径分布測定装置(例えば、CPS Instriment社製など)を用いて体積基準粒子径分布を測定することができる。
このようにして得られた体積基準粒子径分布の平均値や標準偏差等から従来公知の式によって尖度および歪度を算出する。例えば、SAS Institute Japan社製JMP Ver.13.2を用いて尖度および歪度を算出できる。なお、体積基準粒子径粒度分布において、まれに所定の粒子径の頻度が負の値を取る事があるが、そのような場合は頻度をゼロとして算出する。
<Measurement of volume-based particle size distribution and calculation method of kurtosis / skewness>
In the present invention, the volume-based particle size distribution of the silica-based particle group is measured by the centrifugal sedimentation method. For example, a silica-based particle dispersion is diluted with a 0.05 mass% sodium dodecyl sulfate aqueous solution to adjust the solid content concentration to 2 mass%, and a known disc centrifugal particle size distribution measuring device (for example, manufactured by CPS Instrument) or the like is used. ) Can be used to measure the volume-based particle size distribution.
The kurtosis and skewness are calculated from the average value and standard deviation of the volume reference particle size distribution thus obtained by a conventionally known formula. For example, JMP Ver. The kurtosis and skewness can be calculated using 13.2. In rare cases, the frequency of a predetermined particle size may take a negative value in the volume-based particle size distribution, and in such a case, the frequency is calculated as zero.

<多峰分布>
本発明のシリカ系粒子群の体積基準粒子径分布は、下記の方法で波形分離すると、分離ピークが3つ以上検出される多峰分布となる。単峰分布となる粒子群の場合は、粒子径に応じた研磨速度とうねりが発生し、粒子径が大きい場合は研磨速度は高いがうねりが大きくなり、粒子径が小さい場合はうねりは良化するが研磨速度は低くなる。これに対して多峰分布となる粒子群の場合は、それぞれの成分の粒子径に応じた研磨痕を残しながら研磨が進行し、これらの総和がうねりおよび研磨速度となる。従って、大粒子成分と同時に、小粒子成分が十分な研磨速度を示すような分布(小粒子も大粒子も多く含まれているような、例えば台形の分布で、波形分離すると多峰となる分布)であれば、研磨速度とうねりが両立できる。
<Multi-peak distribution>
The volume-based particle size distribution of the silica-based particle group of the present invention is a multi-peak distribution in which three or more separation peaks are detected when waveforms are separated by the following method. In the case of a particle group with a single peak distribution, polishing speed and swell are generated according to the particle size, when the particle size is large, the polishing speed is high but the swell is large, and when the particle size is small, the swell is improved. However, the polishing speed is low. On the other hand, in the case of a particle group having a multi-peak distribution, polishing proceeds while leaving polishing marks corresponding to the particle size of each component, and the sum of these becomes the waviness and the polishing rate. Therefore, at the same time as the large particle component, the distribution in which the small particle component shows a sufficient polishing rate (for example, a trapezoidal distribution containing many small particles and large particles, which becomes multi-peak when waveform separated). ), Both polishing speed and waviness can be achieved.

波形分離は、前述のディスク遠心式粒子径分布測定装置にて得られた体積基準粒子径分布を、グラフ作成・データ解析ソフト Origin(OriginLab Corporation社製)のピークアナライザを使用して解析することにより行う。まず、基線を0、ピークタイプをGaussianに設定し、粒度分布の極大点をピーク位置として選択して、重み付けなしでピークフィッティングを行い、算出されたピークが以下の条件1および2から逸脱していないことを確認し、逸脱している場合は、下記条件1および2を満たすまでピーク位置を分布範囲内の任意の位置にずらしてピークフィッティングを繰り返す。その後、補正R二乗値が0.99以下である場合は分布範囲内の任意の位置にピークを追加し、補正R二乗値が0.99以上になるまでピークフィッティングを繰り返す。このときの分離されたピークの数をピークの個数とする。
条件1:算出されたそれぞれのピークが元の分布より大きい値を取らないこと。
条件2:算出されたそれぞれのピークが負の値を取らないこと。
このような体積基準粒子径分布が多峰分布となるシリカ系粒子群は、大粒子から小粒子まで分布が幅広く(分布がブロードであり)、より好適な研磨性能を有する。
具体的には、波形分離した最大ピークの体積割合が、全体の体積のうち75%以下である事が望ましい。最大ピークの体積割合が75%以下の場合は、分布がブロードになり、波形分離した場合、分離ピークが3以上の多峰分布となる傾向にあるからである。
この最大ピークの体積割合が75%超の場合は、実質的に単峰分布に近い分布であり、このような体積基準粒子径分布を波形分離しても、分離ピークは3未満となる傾向にある。
Waveform separation is performed by analyzing the volume-based particle size distribution obtained by the above-mentioned disk centrifugal particle size distribution measuring device using a peak analyzer of graph creation / data analysis software Origin (manufactured by OriginLab Corporation). Do. First, the baseline is set to 0, the peak type is set to Gaussian, the maximum point of the particle size distribution is selected as the peak position, peak fitting is performed without weighting, and the calculated peak deviates from the following conditions 1 and 2. If there is no deviation, the peak position is shifted to an arbitrary position within the distribution range until the following conditions 1 and 2 are satisfied, and peak fitting is repeated. After that, when the corrected R-squared value is 0.99 or less, a peak is added at an arbitrary position in the distribution range, and peak fitting is repeated until the corrected R-squared value becomes 0.99 or more. The number of separated peaks at this time is defined as the number of peaks.
Condition 1: Each calculated peak does not take a value larger than the original distribution.
Condition 2: Each calculated peak does not take a negative value.
The silica-based particle group having such a volume-based particle size distribution with a multi-peak distribution has a wide distribution from large particles to small particles (the distribution is broad), and has more suitable polishing performance.
Specifically, it is desirable that the volume ratio of the maximum peak separated by waveform is 75% or less of the total volume. This is because when the volume ratio of the maximum peak is 75% or less, the distribution becomes broad, and when the waveforms are separated, the separated peaks tend to have a multi-peak distribution of 3 or more.
When the volume ratio of the maximum peak exceeds 75%, the distribution is substantially close to the single peak distribution, and even if the volume reference particle size distribution is waveform-separated, the separation peak tends to be less than 3. is there.

さらには、本発明のシリカ系粒子群は、その体積基準粒子径分布を波形分離した際に検出された分離ピークのうち、最大粒子成分の体積割合が75%以下であることが好ましく、73%以下であることがより好ましい。このようなシリカ系粒子群を砥粒として使用すると、大粒子成分が少ないことにより、研磨時において基板の表面粗さやうねりがより良化する。ここで、本発明において「最大粒子成分」とは、シリカ系粒子群の体積基準粒子径分布を波形分離した際に、粒子径が最も大きい粒子側にある分離ピークに含まれる粒子成分を意味する。 Further, in the silica-based particle group of the present invention, the volume ratio of the maximum particle component among the separation peaks detected when the volume reference particle size distribution is waveform-separated is preferably 75% or less, preferably 73%. The following is more preferable. When such a silica-based particle group is used as abrasive grains, the surface roughness and waviness of the substrate are further improved during polishing due to the small amount of large particle components. Here, in the present invention, the "maximum particle component" means a particle component contained in the separation peak on the particle side having the largest particle size when the volume-based particle size distribution of the silica-based particle group is waveform-separated. ..

<アスペクト比>
本発明のシリカ系粒子群は、SEM画像解析の結果、得られる個数基準粒子径分布において、小粒子側成分のアスペクト比が1.05〜5.0の範囲にあることが好ましく、1.05〜3.0の範囲にあることがより好ましく、1.05〜2.0の範囲にあることが更に好ましく、1.05〜1.5の範囲ある事が最も好ましい。なお、SEM画像解析により得られる個数基準粒子径分布における小粒子側成分のアスペクト比とは、以下のような方法により測定、算出されたものである。まず、公知の走査型電子顕微鏡(SEM)および公知の画像解析システムを用いて、シリカ系粒子群の総粒子数をカウントする。また、各粒子の面積を算出し、その面積と等しい面積の円の直径を求め、それを粒子径とする。そして、得られた粒子径をサイズ順にならべ、小さい側から数えて粒子個数の1/3までの粒子を小粒子側成分とし、小粒子側成分の粒子の各々についてアスペクト比(最小外接四角の長径/短径比)を求め、それらの単純平均値を「小粒子側成分のアスペクト比」とする。
本発明のシリカ系粒子群の小粒子側成分のアスペクト比は、通常、シリカ系粒子群の平均アスペクト比よりも小さくなる。小粒子側成分のアスペクト比が1.05未満の場合、そのような粒子は実質的に球形粒子と同等であるため研磨速度が低く、シリカ系粒子群の研磨速度も低下する傾向にある。しかし、小粒子側成分のアスペクト比が1.05超であるシリカ系粒子群を砥粒として使用すると、小粒子側成分も高い研磨速度を示すため、シリカ系粒子群の研磨速度をより高くすることができ、ディフェクト等も生じにくく、高い面精度が得られる傾向にある。また、小粒子側成分のアスペクト比がこの範囲より大きい場合、分布全体の平均アスペクト比もさらに高いので、研磨速度は高いが、ディフェクトが生じやすくなり、表面の粗さ、うねりも悪化する傾向にある。
<Aspect ratio>
In the silica-based particle group of the present invention, the aspect ratio of the small particle side component is preferably in the range of 1.05 to 5.0 in the number-based particle size distribution obtained as a result of SEM image analysis, and 1.05. It is more preferably in the range of ~ 3.0, further preferably in the range of 1.05 to 2.0, and most preferably in the range of 1.05 to 1.5. The aspect ratio of the small particle side component in the number-based particle size distribution obtained by SEM image analysis is measured and calculated by the following method. First, the total number of particles in the silica-based particle group is counted using a known scanning electron microscope (SEM) and a known image analysis system. In addition, the area of each particle is calculated, the diameter of a circle having an area equal to the area is obtained, and this is used as the particle size. Then, the obtained particle diameters are arranged in order of size, and particles up to 1/3 of the number of particles counted from the small side are set as the small particle side component, and the aspect ratio (major axis of the minimum circumscribing square) is used for each of the particles of the small particle side component. / Minority ratio) is obtained, and their simple average value is defined as the "aspect ratio of the small particle side component".
The aspect ratio of the small particle side component of the silica-based particle group of the present invention is usually smaller than the average aspect ratio of the silica-based particle group. When the aspect ratio of the small particle side component is less than 1.05, such particles are substantially equivalent to spherical particles, so that the polishing rate is low and the polishing rate of the silica-based particle group tends to be low. However, when a silica-based particle group having an aspect ratio of the small particle-side component of more than 1.05 is used as the abrasive grains, the small-particle-side component also exhibits a high polishing rate, so that the polishing rate of the silica-based particle group is further increased. This can be done, defects are less likely to occur, and high surface accuracy tends to be obtained. In addition, when the aspect ratio of the small particle side component is larger than this range, the average aspect ratio of the entire distribution is also higher, so that the polishing speed is high, but defects are likely to occur, and the surface roughness and waviness tend to deteriorate. is there.

ここで、単粒子が結合したアスペクト比が高い粒子を作る方法としては、例えば数十nmの粒子をイオン強度調整や高分子などを利用して会合させてアスペクト比を高める方法や、粒子の調合時に核生成と同時にイオン強度等を調整することで粒子を会合させ、更に生成した異形シード粒子を粒子成長させてアスペクト比が高い粒子を得る方法がある。しかし、これらの方法の場合、アスペクト比が高い粒子が生成すると同時に、会合しない粒子も残存し易いため、粒子径の小さな粒子は、球形に近くアスペクト比が小さな粒子となる傾向にあり、球形粒子は研磨速度が低いため、粒子群全体として、研磨速度が低くなる傾向にある。これに対し、本発明の異形シリカ系粒子を含むシリカ系粒子群は、解砕工程の緻密化作用のため、小粒子側成分にも異形粒子を含むことから、高い研磨速度を得ることができる。 Here, as a method of producing particles having a high aspect ratio in which single particles are bonded, for example, a method of associating particles of several tens of nm by using ionic strength adjustment or a polymer to increase the aspect ratio, or preparation of particles. Occasionally, there is a method in which particles are associated by adjusting the ionic strength or the like at the same time as nucleation, and the generated irregular seed particles are further grown to obtain particles having a high aspect ratio. However, in the case of these methods, particles having a high aspect ratio are generated, and at the same time, particles that do not associate are likely to remain. Therefore, particles having a small particle size tend to be particles having a small aspect ratio and are close to spherical, and are spherical particles. Since the polishing rate is low, the polishing rate of the entire particle group tends to be low. On the other hand, the silica-based particle group containing the deformed silica-based particles of the present invention can obtain a high polishing rate because the small particle side component also contains the deformed particles due to the densification action of the crushing step. ..

<変動係数(CV値)>
本発明に係るシリカ系粒子群の体積基準粒子径分布の粒子径の変動係数は、30%以上であることが好ましく、50%以上であることがより好ましい。前記変動係数を所定の範囲とすることで、体積基準粒子径分布がブロードとなり、つまり幅広い粒子径分布を有するシリカ系粒子群となり、より好適な研磨性能を発揮する。なお、本発明において「変動係数(CV値)」とは、その標準偏差を平均値で割った値を百分率で示したものであり、相対的なばらつきを示している。
なお、本発明のCV値は、ディスク遠心式粒子径分布測定装置(CPS Instriment社製)を用いた体積基準粒子径分布から求めたものとする。
<Coefficient of variation (CV value)>
The coefficient of variation of the particle size of the volume-based particle size distribution of the silica-based particle group according to the present invention is preferably 30% or more, and more preferably 50% or more. By setting the coefficient of variation within a predetermined range, the volume-based particle size distribution becomes broad, that is, a silica-based particle group having a wide particle size distribution, and more suitable polishing performance is exhibited. In the present invention, the "coefficient of variation (CV value)" is a value obtained by dividing the standard deviation by the average value as a percentage, and indicates a relative variation.
The CV value of the present invention is determined from the volume-based particle size distribution using a disk centrifugal particle size distribution measuring device (manufactured by CPS Instrument).

<平滑度S>
本発明のシリカ系粒子群における、画像解析法による平均面積(S1)に対する画像解析法による平均外周長と等価な円の面積(S2)の比であらわされる平滑度S(S=S2/S1)は、1.1〜5.0の範囲であることが好ましく、1.3〜4.0の範囲であることがより好ましい。S値が1.0よりも高い場合は、シリカ系粒子群に含まれる異形シリカ系粒子の表面が平滑でなく微小な凹凸を有した形状であることを示している。これは異形シード粒子が一次粒子の集合体であり、このシード粒子の表面も微小な突起を有しており、このシード粒子を粒子成長させた異形シリカ系粒子は、微小な突起が維持された形状となるからである。さらに異形シリカ系粒子表面に適度な微小突起を有する異形シリカ系粒子を含むシリカ系粒子群を研磨砥粒として用いた場合、突起部に研磨圧力が集中するため、高い研磨速度が得られる。なお、粒子表面の突起が過剰な場合は、研磨後の基板表面の表面粗さやうねりは悪化しないが、砥粒が摩耗し易く、研磨速度が低下する傾向にある。
<Smoothness S>
In the silica-based particle group of the present invention, the smoothness S (S = S 2 ) represented by the ratio of the area of a circle (S 2 ) equivalent to the average outer peripheral length by the image analysis method to the average area (S 1) by the image analysis method. / S 1 ) is preferably in the range of 1.1 to 5.0, and more preferably in the range of 1.3 to 4.0. When the S value is higher than 1.0, it indicates that the surface of the deformed silica-based particles contained in the silica-based particle group is not smooth and has a shape having minute irregularities. This is because the deformed seed particles are an aggregate of primary particles, and the surface of the seed particles also has minute protrusions, and the deformed silica-based particles obtained by growing the seed particles have maintained the fine protrusions. This is because it has a shape. Further, when a silica-based particle group containing irregularly shaped silica-based particles having appropriate fine protrusions on the surface of the deformed silica-based particles is used as the polishing abrasive grains, the polishing pressure is concentrated on the protrusions, so that a high polishing rate can be obtained. When the protrusions on the particle surface are excessive, the surface roughness and waviness of the substrate surface after polishing do not deteriorate, but the abrasive grains tend to wear and the polishing speed tends to decrease.

ここで、シリカ系粒子群における、画像解析法による平均面積(S1)および画像解析法による平均外周長と等価な円の面積(S2)の測定および算出について説明する。
これらは、以下のような方法で測定、算出されたものである。初めに、公知の走査型電子顕微鏡(SEM)を用いて、粒子表面の任意の箇所を、倍率3000倍で1視野当たり1.1×10-3mm2の面積で15視野撮影する。この各視野において撮影された個々の画像に含まれる全てのシリカ微粒子について、公知の画像解析システムを用いて各粒子の面積および外周長を測定し、この測定された各面積および各外周長データから平均面積(S1)(単純平均値)および平均外周長(単純平均値)を算出し、さらにこの平均外周長から、平均外周長と等価な円(平均外周長と同じ円周である円)の面積(S2)を算出する。
Here, the measurement and calculation of the average area (S 1 ) by the image analysis method and the area of the circle (S 2 ) equivalent to the average outer peripheral length by the image analysis method in the silica-based particle group will be described.
These are measured and calculated by the following methods. First, using a known scanning electron microscope (SEM), an arbitrary part of the particle surface is photographed in 15 fields with an area of 1.1 × 10 -3 mm 2 per field at a magnification of 3000 times. For all the silica fine particles contained in the individual images taken in each of the visual fields, the area and the outer peripheral length of each particle were measured using a known image analysis system, and from the measured areas and the outer peripheral length data. The average area (S 1 ) (simple average value) and the average outer circumference length (simple average value) are calculated, and from this average outer circumference length, a circle equivalent to the average outer circumference length (a circle having the same circumference as the average outer circumference length). The area of (S 2 ) is calculated.

<Q2/Q1
本発明のシリカ系粒子群は、その体積基準粒子径分布において、全体積(Q1)に対する0.7μm以上の粒子の体積(Q2)の割合Q(Q=Q2/Q1、百分率により表示)が5.0%以下であることが好ましく、4.5%以下であることがより好ましい。このようなシリカ系粒子群は、粗大粒子の割合が少ないことにより、研磨時においてスクラッチなどのディフェクトがより発生しにくく、研磨基板の表面粗さをより小さくすることができる。
<Q 2 / Q 1 >
In the volume-based particle size distribution of the silica-based particle group of the present invention, the ratio Q (Q = Q 2 / Q 1 ) of the volume (Q 2 ) of particles of 0.7 μm or more to the total volume (Q 1 ) is determined by the percentage. The display) is preferably 5.0% or less, and more preferably 4.5% or less. In such a silica-based particle group, since the proportion of coarse particles is small, defects such as scratches are less likely to occur during polishing, and the surface roughness of the polished substrate can be made smaller.

なお、本発明のシリカ系粒子群の体積基準粒子径分布における全体積(Q1)、これを波形分離した結果得られた分離ピークの各成分の体積割合、最大粒子成分の体積割合および0.7μm以上の粒子の体積(Q2)についても、前述のディスク遠心式粒子径分布測定装置を用いた方法により測定することができる。 Note that the total volume in the silica-based volume-based particle size distribution of the particles of the present invention (Q 1), the volume ratio of each component of the obtained separation peaks result which was waveform separation, the volume fraction and 0 of the maximum particle component. The volume (Q 2 ) of particles of 7 μm or more can also be measured by the method using the above-mentioned disc centrifugal particle size distribution measuring device.

<研磨用砥粒分散液>
本発明のシリカ系粒子群を分散溶媒に分散したシリカ系粒子分散液(本発明のシリカ系粒子群を含むシリカ系粒子分散液)は、研磨用砥粒分散液(以下では「本発明の研磨用砥粒分散液」ともいう)として好ましく用いることができる。特に、磁気ディスクを研磨するために好ましく用いることができる。さらに、SiO2絶縁膜が形成された半導体基板の平坦化用の研磨用砥粒分散液として好適に使用することができる。また、研磨性能を制御するためにケミカル成分を添加し、研磨スラリーとしても好適に用いることができる。
<Abrasive grain dispersion for polishing>
The silica-based particle dispersion liquid (silica-based particle dispersion liquid containing the silica-based particle group of the present invention) in which the silica-based particle group of the present invention is dispersed in a dispersion solvent is an abrasive grain dispersion liquid for polishing (hereinafter, "polishing of the present invention". It can also be preferably used as a "abrasive grain dispersion liquid"). In particular, it can be preferably used for polishing magnetic disks. Further, it can be suitably used as an abrasive grain dispersion for polishing for flattening a semiconductor substrate on which a SiO 2 insulating film is formed. Further, a chemical component can be added to control the polishing performance, and the polishing slurry can be suitably used.

そして、本発明の研磨用砥粒分散液は磁気ディスクや半導体基板などを研磨する際の研磨速度が高く、また研磨時に研磨面のスクラッチが少ない、基板への砥粒の残留が少ないなどの効果に優れ、研磨作業の効率を格段に高めることができる。 The polishing abrasive grain dispersion liquid of the present invention has effects such as a high polishing speed when polishing a magnetic disk, a semiconductor substrate, etc., less scratches on the polished surface during polishing, and less residual abrasive grains on the substrate. Excellent, and the efficiency of polishing work can be significantly improved.

本発明の研磨用砥粒分散液は、分散溶媒として水および/または有機溶媒を含む。この分散溶媒として、例えば純水、超純水、イオン交換水のような水を用いることが好ましい。さらに、本発明の研磨用砥粒分散液に、研磨性能を制御するための添加剤として、研磨促進剤、界面活性剤、複素環化合物、pH調整剤、pH緩衝剤および沈降抑制剤からなる群より選ばれる1種以上を添加することで、研磨スラリーとしてより好適に用いられる。 The abrasive grain dispersion liquid for polishing of the present invention contains water and / or an organic solvent as a dispersion solvent. As the dispersion solvent, it is preferable to use water such as pure water, ultrapure water, or ion-exchanged water. Further, the group consisting of a polishing accelerator, a surfactant, a heterocyclic compound, a pH adjusting agent, a pH buffering agent and a precipitation inhibitor as additives for controlling the polishing performance in the abrasive grain dispersion liquid for polishing of the present invention. By adding one or more selected from the above, it is more preferably used as a polishing slurry.

<研磨促進剤>
本発明の研磨用砥粒分散液に、被研磨材の種類によっても異なるが、必要に応じて従来公知の研磨促進剤を添加することで研磨スラリーとして、使用することができる。この様な例としては、過酸化水素、過酢酸、過酸化尿素など及びこれらの混合物を挙げることができる。このような過酸化水素等の研磨促進剤を含む研磨剤組成物を用いると、被研磨材が金属の場合には効果的に研磨速度を向上させることができる。
<Abrasion accelerator>
Although it depends on the type of the material to be polished, it can be used as a polishing slurry by adding a conventionally known polishing accelerator to the abrasive grain dispersion liquid for polishing of the present invention. Examples of such include hydrogen peroxide, peracetic acid, urea peroxide and the like, and mixtures thereof. When such an abrasive composition containing a polishing accelerator such as hydrogen peroxide is used, the polishing rate can be effectively improved when the material to be polished is a metal.

研磨促進剤の別の例としては、硫酸、硝酸、リン酸、シュウ酸、フッ酸等の無機酸、酢酸等の有機酸、あるいはこれら酸のナトリウム塩、カリウム塩、アンモニウム塩、アミン塩およびこれらの混合物などを挙げることができる。これらの研磨促進剤を含む研磨用組成物の場合、複合成分からなる被研磨材を研磨する際に、被研磨材の特定の成分についての研磨速度を促進することにより、最終的に平坦な研磨面を得ることができる。 Other examples of polishing accelerators include inorganic acids such as sulfuric acid, nitric acid, phosphoric acid, oxalic acid and hydrofluoric acid, organic acids such as acetic acid, or sodium salts, potassium salts, ammonium salts, amine salts and these of these acids. And the like. In the case of a polishing composition containing these polishing accelerators, when polishing a material to be polished composed of composite components, by accelerating the polishing rate for a specific component of the material to be polished, finally flat polishing is performed. You can get a face.

本発明の研磨用砥粒分散液が研磨促進剤を含有する場合、その含有量としては、0.1〜10質量%であることが好ましく、0.5〜5質量%であることがより好ましい。 When the abrasive grain dispersion liquid for polishing of the present invention contains a polishing accelerator, the content thereof is preferably 0.1 to 10% by mass, more preferably 0.5 to 5% by mass. ..

<界面活性剤および/または親水性化合物>
本発明の研磨用砥粒分散液の分散性や安定性を向上させるためにカチオン系、アニオン系、ノニオン系、両性系の界面活性剤または親水性化合物を添加することができる。界面活性剤と親水性化合物は、いずれも被研磨面への接触角を低下させる作用を有し、均一な研磨を促す作用を有する。界面活性剤および/または親水性化合物としては、例えば、以下の群から選ばれるものを使用することができる。
<Surfactant and / or hydrophilic compound>
In order to improve the dispersibility and stability of the abrasive grain dispersion liquid for polishing of the present invention, a cationic, anionic, nonionic or amphoteric surfactant or hydrophilic compound can be added. Both the surfactant and the hydrophilic compound have an action of lowering the contact angle with the surface to be polished and an action of promoting uniform polishing. As the surfactant and / or hydrophilic compound, for example, those selected from the following groups can be used.

陰イオン界面活性剤として、カルボン酸塩、スルホン酸塩、硫酸エステル塩、リン酸エステル塩が挙げられ、カルボン酸塩として、石鹸、N−アシルアミノ酸塩、ポリオキシエチレンまたはポリオキシプロピレンアルキルエーテルカルボン酸塩、アシル化ペプチド;スルホン酸塩として、アルキルスルホン酸塩、アルキルベンゼンおよびアルキルナフタレンスルホン酸塩、ナフタレンスルホン酸塩、スルホコハク酸塩、α−オレフィンスルホン酸塩、N−アシルスルホン酸塩;硫酸エステル塩として、硫酸化油、アルキル硫酸塩、アルキルエーテル硫酸塩、ポリオキシエチレンまたはポリオキシプロピレンアルキルアリルエーテル硫酸塩、アルキルアミド硫酸塩;リン酸エステル塩として、アルキルリン酸塩、ポリオキシエチレンまたはポリオキシプロピレンアルキルアリルエーテルリン酸塩を挙げることができる。 Anionic surfactants include carboxylates, sulfonates, sulfates, phosphates, and carboxylates include soaps, N-acylamino acids, polyoxyethylene or polyoxypropylene alkyl ether carboxylic acids. Acidates, acylated peptides; as sulfonates, alkyl sulfonates, alkylbenzene and alkyl naphthalene sulfonates, naphthalene sulfonates, sulfosuccinates, α-olefin sulfonates, N-acyl sulfonates; sulfates. As salts, sulfated oils, alkyl sulfates, alkyl ether sulfates, polyoxyethylene or polyoxypropylene alkylallyl ether sulfates, alkylamide sulfates; as phosphate ester salts, alkyl phosphates, polyoxyethylene or poly Oxypropylene alkylallyl ether phosphate can be mentioned.

陽イオン界面活性剤として、脂肪族アミン塩、脂肪族4級アンモニウム塩、塩化ベンザルコニウム塩、塩化ベンゼトニウム、ピリジニウム塩、イミダゾリニウム塩;両性界面活性剤として、カルボキシベタイン型、スルホベタイン型、アミノカルボン酸塩、イミダゾリニウムベタイン、レシチン、アルキルアミンオキサイドを挙げることができる。 As cationic surfactants, aliphatic amine salts, aliphatic quaternary ammonium salts, benzalkonium chloride salts, benzethonium chloride, pyridinium salts, imidazolinium salts; as amphoteric surfactants, carboxybetaine type, sulfobetaine type, Aminocarboxylates, imidazolinium betaine, lecithin, alkylamine oxides can be mentioned.

非イオン界面活性剤として、エーテル型、エーテルエステル型、エステル型、含窒素型が挙げられ、エーテル型として、ポリオキシエチレンアルキルおよびアルキルフェニルエーテル、アルキルアリルホルムアルデヒド縮合ポリオキシエチレンエーテル、ポリオキシエチレンポリオキシプロピレンブロックポリマー、ポリオキシエチレンポリオキシプロピレンアルキルエーテルが挙げられ、エーテルエステル型として、グリセリンエステルのポリオキシエチレンエーテル、ソルビタンエステルのポリオキシエチレンエーテル、ソルビトールエステルのポリオキシエチレンエーテル、エステル型として、ポリエチレングリコール脂肪酸エステル、グリセリンエステル、ポリグリセリンエステル、ソルビタンエステル、プロピレングリコールエステル、ショ糖エステル、含窒素型として、脂肪酸アルカノールアミド、ポリオキシエチレン脂肪酸アミド、ポリオキシエチレンアルキルアミド等が例示される。その他に、フッ素系界面活性剤などが挙げられる。 Examples of nonionic surfactants include ether type, ether ester type, ester type, and nitrogen-containing type, and ether types include polyoxyethylene alkyl and alkylphenyl ether, alkylallyl formaldehyde condensed polyoxyethylene ether, and polyoxyethylene poly. Examples thereof include oxypropylene block polymer and polyoxyethylene polyoxypropylene alkyl ether. Examples of the ether ester type include polyoxyethylene ether of glycerin ester, polyoxyethylene ether of sorbitan ester, polyoxyethylene ether of sorbitol ester, and ester type. Examples of polyethylene glycol fatty acid ester, glycerin ester, polyglycerin ester, sorbitan ester, propylene glycol ester, sucrose ester, and nitrogen-containing type include fatty acid alkanolamide, polyoxyethylene fatty acid amide, and polyoxyethylene alkylamide. In addition, a fluorine-based surfactant and the like can be mentioned.

界面活性剤としては陰イオン界面活性剤もしくは非イオン系界面活性剤が好ましく、また、塩としては、アンモニウム塩、カリウム塩、ナトリウム塩等が挙げられ、特にアンモニウム塩およびカリウム塩が好ましい。 The surfactant is preferably an anionic surfactant or nonionic surfactant, and examples of the salt include ammonium salt, potassium salt, sodium salt and the like, and ammonium salt and potassium salt are particularly preferable.

さらに、その他の界面活性剤、親水性化合物等としては、グリセリンエステル、ソルビタンエステルおよびアラニンエチルエステル等のエステル;ポリエチレングリコール、ポリプロピレングリコール、ポリテトラメチレングリコール、ポリエチレングリコールアルキルエーテル、ポリエチレングリコールアルケニルエーテル、アルキルポリエチレングリコール、アルキルポリエチレングリコールアルキルエーテル、アルキルポリエチレングリコールアルケニルエーテル、アルケニルポリエチレングリコール、アルケニルポリエチレングリコールアルキルエーテル、アルケニルポリエチレングリコールアルケニルエーテル、ポリプロピレングリコールアルキルエーテル、ポリプロピレングリコールアルケニルエーテル、アルキルポリプロピレングリコール、アルキルポリプロピレングリコールアルキルエーテル、アルキルポリプロピレングリコールアルケニルエーテル、アルケニルポリプロピレングリコール等のエーテル;アルギン酸、ペクチン酸、カルボキシメチルセルロース、カードランおよびプルラン等の多糖類;グリシンアンモニウム塩およびグリシンナトリウム塩等のアミノ酸塩;ポリアスパラギン酸、ポリグルタミン酸、ポリリシン、ポリリンゴ酸、ポリメタクリル酸、ポリメタクリル酸アンモニウム塩、ポリメタクリル酸ナトリウム塩、ポリアミド酸、ポリマレイン酸、ポリイタコン酸、ポリフマル酸、ポリ(p−スチレンカルボン酸)、ポリアクリル酸、ポリアクリルアミド、アミノポリアクリルアミド、ポリアクリル酸アンモニウム塩、ポリアクリル酸ナトリウム塩、ポリアミド酸、ポリアミド酸アンモニウム塩、ポリアミド酸ナトリウム塩およびポリグリオキシル酸等のポリカルボン酸およびその塩;ポリビニルアルコール、ポリビニルピロリドンおよびポリアクロレイン等のビニル系ポリマ;メチルタウリン酸アンモニウム塩、メチルタウリン酸ナトリウム塩、硫酸メチルナトリウム塩、硫酸エチルアンモニウム塩、硫酸ブチルアンモニウム塩、ビニルスルホン酸ナトリウム塩、1−アリルスルホン酸ナトリウム塩、2−アリルスルホン酸ナトリウム塩、メトキシメチルスルホン酸ナトリウム塩、エトキシメチルスルホン酸アンモニウム塩、3−エトキシプロピルスルホン酸ナトリウム塩等のスルホン酸およびその塩;プロピオンアミド、アクリルアミド、メチル尿素、ニコチンアミド、コハク酸アミドおよびスルファニルアミド等のアミド等を挙げることができる。
これらの界面活性剤のうち、好適にはポリアクリル酸ナトリウム塩又はポリアクリル酸ナトリウム塩との使用が推奨される。ポリアクリル酸ナトリウム塩のうち、特には重量平均分子量20,000~140,000の範囲のポリアクリル酸ナトリウム塩であって、該ポリアクリル酸ナトリウム塩に含まれる全ての炭素原子に占めるカルボニル炭素原子と直接結合する炭素原子の割合(個数の割合)が50〜60%の範囲にあるポリアクリル酸ナトリウム塩が好ましい。係るカルボニル炭素原子と直接結合する炭素原子の割合(個数の割合)が50〜60%の範囲にあれば、係るポリアクリル酸ナトリウム塩を含むシリカ系粒子分散液において、シリカ系粒子の沈降が生じた場合でも優れた再分散性を示すことができる。なお、前記ポリアクリル酸ナトリウム塩は、アクリル酸ナトリウム塩とエチレン単位との共重合体であっても構わない。
Further, as other surfactants, hydrophilic compounds and the like, esters such as glycerin ester, sorbitan ester and alanine ethyl ester; polyethylene glycol, polypropylene glycol, polytetramethylene glycol, polyethylene glycol alkyl ether, polyethylene glycol alkenyl ether, alkyl. Polyethylene glycol, alkyl polyethylene glycol alkyl ether, alkyl polyethylene glycol alkenyl ether, alkenyl polyethylene glycol, alkenyl polyethylene glycol alkyl ether, alkenyl polyethylene glycol alkenyl ether, polypropylene glycol alkyl ether, polypropylene glycol alkenyl ether, alkyl polypropylene glycol, alkyl polypropylene glycol alkyl ether , Alkyl Polypropylene Glycol Alkenyl Ether, Ethers such as Alkenyl Polypropylene Glycol; Polysaccharides such as Arginic Acid, Pectinic Acid, Carboxymethyl Cellulose, Cardran and Purulane; Amino Acid Salts such as Glycine Ammonium Salt and Glycin Sodium Salt; Polylysine, polyapple acid, polymethacrylic acid, polyammonium methacrylate salt, polysodium methacrylate salt, polyamic acid, polymaleic acid, polyitaconic acid, polyfumaric acid, poly (p-styrenecarboxylic acid), polyacrylic acid, polyacrylamide, amino Polycarboxylic acids such as polyacrylamide, ammonium polyacrylic acid salt, sodium polyacrylic acid salt, polyamic acid, ammonium polyamic acid salt, sodium polyamic acid salt and polyglioxylic acid and salts thereof; Vinyl-based polyma; ammonium methyltaurate salt, sodium methyltaurate salt, methylsodium sulfate salt, ethylammonium sulfate salt, butylammonium sulfate salt, sodium vinylsulfonic acid salt, sodium 1-allylsulfonic acid salt, 2-allylsulfonic acid Sulphonic acids such as sodium salt, sodium methoxymethylsulfonic acid salt, ammonium ethoxymethylsulfonic acid salt, sodium 3-ethoxypropylsulfonic acid salt and salts thereof; propionamide, acrylamide, methylurea, nicotineamide, succinate a. Examples thereof include amides such as amides and sulfanilamides.
Of these surfactants, it is preferably recommended to use sodium polyacrylate or sodium polyacrylate. Among the sodium polyacrylate salts, a sodium polyacrylate salt having a weight average molecular weight in the range of 20,000 to 140,000, which is a carbonyl carbon atom in all carbon atoms contained in the sodium polyacrylate salt. A sodium polyacrylate salt having a ratio (ratio of the number of carbon atoms) directly bonded to is in the range of 50 to 60% is preferable. When the ratio (ratio of the number) of carbon atoms directly bonded to the carbonyl carbon atom is in the range of 50 to 60%, precipitation of the silica-based particles occurs in the silica-based particle dispersion containing the sodium polyacrylate. Even in this case, excellent redispersibility can be exhibited. The sodium polyacrylate salt may be a copolymer of a sodium acrylate salt and an ethylene unit.

なお、適用する被研磨基材がガラス基板等である場合は、何れの界面活性剤であっても好適に使用できるが、半導体集積回路用シリコン基板などの場合であって、アルカリ金属、アルカリ土類金属またはハロゲン化物等による汚染の影響を嫌う場合にあっては、酸もしくはそのアンモニウム塩系の界面活性剤を使用することが望ましい。 When the base material to be applied is a glass substrate or the like, any surfactant can be preferably used, but in the case of a silicon substrate for a semiconductor integrated circuit or the like, alkali metal or alkaline soil can be used. When the influence of contamination by metalloids or halides is disliked, it is desirable to use an acid or an ammonium salt-based surfactant thereof.

本発明の研磨用砥粒分散液が界面活性剤および/または親水性化合物を含有する場合、その含有量は、総量として、研磨用砥粒分散液の1L中、0.001〜10gとすることが好ましく、0.01〜5gとすることがより好ましく0.1〜3gとすることが特に好ましい。 When the abrasive grain dispersion liquid of the present invention contains a surfactant and / or a hydrophilic compound, the total content thereof shall be 0.001 to 10 g in 1 L of the abrasive grain dispersion liquid for polishing. It is preferably 0.01 to 5 g, more preferably 0.1 to 3 g, and particularly preferably 0.1 to 3 g.

なお、界面活性剤および/または親水性化合物の含有量は、充分な効果を得る上で、研磨用砥粒分散液の1L中、0.001g以上が好ましく、研磨速度低下防止の点から10g以下が好ましい。 The content of the surfactant and / or the hydrophilic compound is preferably 0.001 g or more in 1 L of the abrasive grain dispersion for polishing, and 10 g or less from the viewpoint of preventing a decrease in the polishing speed in order to obtain a sufficient effect. Is preferable.

界面活性剤または親水性化合物は1種のみでもよいし、2種以上を使用してもよく、異なる種類のものを併用することもできる。 Only one type of surfactant or hydrophilic compound may be used, two or more types may be used, or different types may be used in combination.

<複素環化合物>
本発明の研磨用砥粒分散液については、被研磨基材に金属が含まれる場合に、金属に不動態層または溶解抑制層を形成させて、被研磨基材の侵食を抑制する目的で、複素環化合物を含有させても構わない。ここで、「複素環化合物」とはヘテロ原子を1個以上含んだ複素環を有する化合物である。ヘテロ原子とは、炭素原子、または水素原子以外の原子を意味する。複素環とはヘテロ原子を少なくとも一つ持つ環状化合物を意味する。ヘテロ原子は複素環の環系の構成部分を形成する原子のみを意味し、環系に対して外部に位置していたり、少なくとも一つの非共役単結合により環系から分離していたり、環系のさらなる置換基の一部分であるような原子は意味しない。ヘテロ原子として好ましくは、窒素原子、硫黄原子、酸素原子、セレン原子、テルル原子、リン原子、ケイ素原子、およびホウ素原子などを挙げることができるがこれらに限定されるものではない。複素環化合物の例として、イミダゾール、ベンゾトリアゾール、ベンゾチアゾール、テトラゾールなどを用いることができる。より具体的には、1,2,3,4−テトラゾール、5−アミノ−1,2,3,4−テトラゾール、5−メチル−1,2,3,4−テトラゾール、1,2,3−トリアゾール、4−アミノ−1,2,3−トリアゾール、4,5−ジアミノ−1,2,3−トリアゾール、1,2,4−トリアゾール、3−アミノ1,2,4−トリアゾール、3,5−ジアミノ−1,2,4−トリアゾールなどを挙げることができるが、これらに限定されるものではない。
<Heterocyclic compound>
The abrasive grain dispersion liquid of the present invention is used for the purpose of suppressing erosion of the base material to be polished by forming a passivation layer or a dissolution suppressing layer on the metal when the base material to be polished contains a metal. Heterocyclic compounds may be contained. Here, the "heterocyclic compound" is a compound having a heterocycle containing one or more heteroatoms. Heteroatom means an atom other than a carbon atom or a hydrogen atom. A heterocycle means a cyclic compound having at least one heteroatom. Heteroatoms refer only to the atoms that form the constituents of the heterocyclic ring system, and may be located outside the ring system, separated from the ring system by at least one unconjugated single bond, or the ring system. It does not mean an atom that is part of a further substituent of. Preferred heteroatoms include, but are not limited to, nitrogen atoms, sulfur atoms, oxygen atoms, selenium atoms, tellurium atoms, phosphorus atoms, silicon atoms, and boron atoms. As an example of the heterocyclic compound, imidazole, benzotriazole, benzothiazole, tetrazole and the like can be used. More specifically, 1,2,3,4-tetrazole, 5-amino-1,2,3,4-tetrazole, 5-methyl-1,2,3,4-tetrazole, 1,2,3- Triazole, 4-amino-1,2,3-triazole, 4,5-diamino-1,2,3-triazole, 1,2,4-triazole, 3-amino1,2,4-triazole, 3,5 −Diamino-1,2,4-triazole and the like can be mentioned, but are not limited thereto.

本発明の研磨用砥粒分散液に複素環化合物を配合する場合の含有量については、0.001〜1.0質量%であることが好ましく、0.001〜0.7質量%であることがより好ましく、0.002〜0.4質量%であることがさらに好ましい。 The content of the heterocyclic compound in the abrasive grain dispersion liquid for polishing of the present invention is preferably 0.001 to 1.0% by mass, preferably 0.001 to 0.7% by mass. Is more preferable, and 0.002 to 0.4% by mass is further preferable.

<pH調整剤>
上記各添加剤の効果を高めるためなどに必要に応じて酸または塩基およびそれらの塩類化合物を添加して研磨用組成物のpHを調節することができる。
<pH adjuster>
The pH of the polishing composition can be adjusted by adding an acid or a base and a salt compound thereof, if necessary, in order to enhance the effect of each of the above additives.

本発明の研磨用砥粒分散液をpH7以上に調整するときは、pH調整剤として、アルカリ性のものを使用する。望ましくは、水酸化ナトリウム、アンモニア水、炭酸アンモニウム、エチルアミン、メチルアミン、トリエチルアミン、テトラメチルアミンなどのアミンが使用される。 When adjusting the polishing abrasive grain dispersion liquid of the present invention to pH 7 or higher, an alkaline pH adjusting agent is used. Desirably, amines such as sodium hydroxide, aqueous ammonia, ammonium carbonate, ethylamine, methylamine, triethylamine, tetramethylamine and the like are used.

本発明の研磨用砥粒分散液をpH7未満に調整するときは、pH調整剤として、酸性のものが使用される。例えば、酢酸、乳酸、クエン酸、リンゴ酸、酒石酸、グリセリン酸などのヒドロキシ酸類の様な、塩酸、硝酸などの鉱酸が使用される。 When the polishing abrasive grain dispersion liquid of the present invention is adjusted to a pH of less than 7, an acidic pH adjusting agent is used. For example, mineral acids such as hydrochloric acid and nitric acid such as hydroxy acids such as acetic acid, lactic acid, citric acid, malic acid, tartaric acid and glyceric acid are used.

<pH緩衝剤>
本発明の研磨用砥粒分散液のpH値を一定に保持するために、pH緩衝剤を使用しても構わない。pH緩衝剤としては、例えば、リン酸2水素アンモニウム、リン酸水素2アンモニウム、4ホウ酸アンモ四水和水などのリン酸塩およびホウ酸塩または有機酸塩などを使用することができる。
<pH buffer>
A pH buffer may be used to keep the pH value of the abrasive grain dispersion liquid for polishing of the present invention constant. As the pH buffer, for example, phosphates such as ammonium dihydrogen phosphate, diammonium hydrogen phosphate, quaternary ammonium tetrahydrate, and borates or organic acid salts can be used.

<沈降抑制剤>
本発明の研磨用砥粒分散液は、沈降を抑制し、仮に沈降した場合であって易分散化させる目的で沈降抑制剤を添加しても構わない。沈降抑制剤としては特に制限はないが、ポリカルボン酸系界面活性剤、陰イオン系高分子界面活性剤、カチオン系界面活性剤、ポリアクリル酸ナトリウム、カルボン酸系共重合体ナトリウム塩、カルボン酸系共重合体アンモニウム塩、ポリアクリル酸アンモニウム、ポリアクリル酸、スルホン酸系共重合体ナトリウム塩、脂肪酸塩、α−スルホ脂肪酸エステル塩、アルキルベンゼンスルホン酸塩、アルキル硫酸塩、アルキルエーテル硫酸塩エステル、アルキル硫酸トリエタノールアミン、脂肪酸ジエタノールアミド、ポリオキシエチレンアルキルエーテル、ポリオキシエチレンアルキルフェニルエーテル、アルキルトリメチルアンモニウム塩、ジアルキルジメチルアンモニウムクロリド、アルキルピリジウムクロリド、アルキルカルボキシベタイン、スチレン・無水マレイン酸共重合体、ナフタレンスルホン酸塩のホルマリン結合物、カルボキシメチルセルロース、オレフィン・無水マレイン酸共重合物、アルギン酸ソーダ、ポリビニルアルコール、ポリアルキレンポリアミン、ポリアクリルアミド、ポリオキシプロピレン・ポリオキシエチレンブロック、ポリマーでんぷん、ポリエチレンイミン、アミノアルキルアクリレート共重合体、ポリビニルイミダソリン、サトキンサンなどが挙げられる。
なお、本発明の研磨用砥粒分散液に沈降抑制剤を配合する場合の含有量については、総量として、研磨用砥粒分散液の1L中、0.001〜10gとすることが好ましく、0.01〜5gとすることがより好ましく、0.1〜3gとすることが特に好ましい。この含有量は、充分な効果を得る上で、研磨用砥粒分散液の1L中、0.001g以上が好ましく、研磨速度低下防止の点から10g以下が好ましい。
<Precipitation inhibitor>
In the abrasive grain dispersion liquid for polishing of the present invention, a settling inhibitor may be added for the purpose of suppressing settling and making it easy to disperse even if it is settled. The precipitation inhibitor is not particularly limited, but is a polycarboxylic acid-based surfactant, anionic polymer surfactant, cationic surfactant, sodium polyacrylate, carboxylic acid-based copolymer sodium salt, and carboxylic acid. Copolymer ammonium salt, ammonium polyacrylate, polyacrylic acid, sulfonic acid copolymer sodium salt, fatty acid salt, α-sulfo fatty acid ester salt, alkylbenzene sulfonate, alkyl sulfate, alkyl ether sulfate ester, Alkyl sulfate triethanolamine, fatty acid diethanolamide, polyoxyethylene alkyl ether, polyoxyethylene alkylphenyl ether, alkyltrimethylammonium salt, dialkyldimethylammonium chloride, alkylpyridium chloride, alkylcarboxybetaine, styrene / maleic anhydride copolymer , Formalin conjugate of naphthalene sulfonate, carboxymethyl cellulose, olefin / maleic anhydride copolymer, sodium alginate, polyvinyl alcohol, polyalkylene polyamine, polyacrylamide, polyoxypropylene / polyoxyethylene block, polymer starch, polyethyleneimine, Aminoalkyl acrylate copolymers, polyvinyl imidazoline, satokinsan and the like can be mentioned.
When the sedimentation inhibitor is added to the polishing abrasive grain dispersion liquid of the present invention, the total amount is preferably 0.001 to 10 g in 1 L of the polishing abrasive grain dispersion liquid, and is 0. It is more preferably 0.01 to 5 g, and particularly preferably 0.1 to 3 g. This content is preferably 0.001 g or more in 1 L of the abrasive grain dispersion for polishing, and preferably 10 g or less from the viewpoint of preventing a decrease in polishing speed in order to obtain a sufficient effect.

また、本発明の研磨用砥粒分散液の分散溶媒として、例えばメタノール、エタノール、イソプロパノール、n−ブタノール、メチルイソカルビノールなどのアルコール類;アセトン、2−ブタノン、エチルアミルケトン、ジアセトンアルコール、イソホロン、シクロヘキサノンなどのケトン類;N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミドなどのアミド類;ジエチルエーテル、イソプロピルエーテル、テトラヒドロフラン、1,4−ジオキサン、3,4−ジヒドロ−2H−ピランなどのエーテル類;2−メトキシエタノール、2−エトキシエタノール、2−ブトキシエタノール、エチレングリコールジメチルエーテルなどのグリコールエーテル類;2−メトキシエチルアセテート、2−エトキシエチルアセテート、2−ブトキシエチルアセテートなどのグリコールエーテルアセテート類;酢酸メチル、酢酸エチル、酢酸イソブチル、酢酸アミル、乳酸エチル、エチレンカーボネートなどのエステル類;ベンゼン、トルエン、キシレンなどの芳香族炭化水素類;ヘキサン、ヘプタン、イソオクタン、シクロヘキサンなどの脂肪族炭化水素類;塩化メチレン、1,2−ジクロルエタン、ジクロロプロパン、クロルベンゼンなどのハロゲン化炭化水素類;ジメチルスルホキシドなどのスルホキシド類;N−メチル−2−ピロリドン、N−オクチル−2−ピロリドンなどのピロリドン類などの有機溶媒を用いることができる。これらを水と混合して用いてもよい。 Further, as the dispersion solvent of the abrasive grain dispersion liquid for polishing of the present invention, alcohols such as methanol, ethanol, isopropanol, n-butanol, methyl isocarbinol and the like; acetone, 2-butanone, ethyl amyl ketone, diacetone alcohol, etc. Ketones such as isophorone and cyclohexanone; amides such as N, N-dimethylformamide and N, N-dimethylacetamide; diethyl ether, isopropyl ether, tetrahydrofuran, 1,4-dioxane, 3,4-dihydro-2H-pyran and the like. Ethers; glycol ethers such as 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, ethylene glycol dimethyl ether; glycol ether acetates such as 2-methoxyethyl acetate, 2-ethoxyethyl acetate, 2-butoxyethyl acetate Classes; esters such as methyl acetate, ethyl acetate, isobutyl acetate, amyl acetate, ethyl lactate, ethylene carbonate; aromatic hydrocarbons such as benzene, toluene and xylene; aliphatic hydrocarbons such as hexane, heptane, isooctane and cyclohexane. Classes; halogenated hydrocarbons such as methylene chloride, 1,2-dichloroethane, dichloropropane, chlorobenzene; sulfoxides such as dimethylsulfoxide; pyrrolidones such as N-methyl-2-pyrrolidone and N-octyl-2-pyrrolidone. And other organic solvents can be used. These may be mixed with water and used.

本発明の研磨用砥粒分散液に含まれる固形分濃度は0.3〜50質量%の範囲にあることが好ましい。この固形分濃度が低すぎると研磨速度が低下する可能性がある。逆に固形分濃度が高すぎても研磨速度はそれ以上向上する場合は少ないので、不経済となり得る。 The solid content concentration contained in the abrasive grain dispersion for polishing of the present invention is preferably in the range of 0.3 to 50% by mass. If this solid content concentration is too low, the polishing rate may decrease. On the contrary, even if the solid content concentration is too high, the polishing rate is rarely improved further, which may be uneconomical.

<異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の製造方法>
次に、本発明の異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の製造方法を具体的に説明する。
これは、シリカ系ゲルをアルカリ性下で湿式解砕して高異形シリカ系ゲルからなる粒子を含む溶液にする工程aと、前記高異形シリカ系ゲルからなる粒子を含む溶液にアルカリ性下で珪酸液を添加して加温し、前記高異形シリカ系ゲルからなる粒子の一次粒子間を前記珪酸液に含まれる珪酸との反応によって埋めながら高い異形度のまま粒子を成長させて異形シリカ系粒子にする工程bと、成長した前記異形シリカ系粒子を含むシリカ系粒子群を濃縮して、回収する工程cとを備える方法である。
<Method for producing a group of silica-based particles composed of irregularly shaped silica-based particles and non-modified silica-based particles>
Next, a method for producing a silica-based particle group composed of the deformed silica-based particles and the non-deformed silica-based particles of the present invention will be specifically described.
This is a step a in which the silica-based gel is wet-crushed under alkaline conditions to form a solution containing particles composed of highly deformed silica-based gels, and a silicic acid solution in a solution containing particles composed of the highly deformed silica-based gels under alkaline conditions. Is added and heated to fill the gaps between the primary particles of the particles made of the highly deformed silica-based gel by the reaction with the silicic acid contained in the silicic acid solution, and the particles are grown with a high degree of deformity to become deformed silica-based particles. This is a method including a step b of performing the process and a step c of concentrating and recovering the silica-based particle group containing the grown irregular silica-based particles.

〔工程a〕
この工程は、出発原料としてシリカ系ゲルを用いる。シリカ系ゲルはシリカ系のゲルであれば、シリカゲルだけでなく、シリカ・アルミナゲル、シリカ・チタニアゲル、シリカ・ジルコニアゲルなどの複合体ゲルであっても構わない。またゲルの状態は、ヒドロゲルであってもキセロゲルであっても、オルガノゲルであっても構わない。そして、このようなシリカ系ゲルをアルカリ性下で湿式解砕して、高異形シリカ系ゲルからなる粒子を含む溶液にする工程である。シリカ系ゲルを粉砕してシード粒子として使用することによって、このシード粒子は高い異形度を備えたシリカゲルとなり、また、このシード粒子は真球状のものがほとんど得られず、高異形粒子となる。この傾向は、比表面積が小さく一次粒子径の大きなシリカ系ゲル原料を用いて粉砕した場合に顕著で、比表面積が大きく一次粒子径が小さいシリカ系ゲル原料を用いて粉砕した場合は異形度は低くなる傾向にある。さらに、シードサイズが小さくなるように粉砕すると異形度は低くなる傾向にある。そして、後の工程bにおいて、添加する珪酸液が高異形シリカ系ゲルからなる粒子(シード粒子)のシリカ表面および内部に侵入しながら沈積し、一次粒子間の細孔と優先的に反応して該細孔が埋められながら、粒子外表面にシリカが沈着して、粒子の成長を促す(以下の説明において、これをビルドアップという)。このビルドアップによって、粒子外表面の凸部はより外径の増加に寄与し、凹部は外形への寄与が小さいので、成長粒子の強度が高くなると共に粒子の異形が崩れるのが抑制され、粒子径が大きく、高い異形度を備えた異形シリカ系粒子を製造することができる。
[Step a]
This step uses a silica-based gel as a starting material. The silica-based gel may be not only silica gel but also a composite gel such as silica-alumina gel, silica-titania gel, and silica-zirconia gel as long as it is a silica-based gel. The gel state may be hydrogel, xerogel, or organogel. Then, such a silica-based gel is wet-crushed under alkaline conditions to obtain a solution containing particles composed of a highly deformed silica-based gel. By pulverizing the silica-based gel and using it as seed particles, the seed particles become silica gel having a high degree of deformation, and the seed particles are hardly spherical and become highly deformed particles. This tendency is remarkable when crushed using a silica-based gel raw material having a small specific surface area and a large primary particle size, and when crushed using a silica-based gel raw material having a large specific surface area and a small primary particle size, the degree of deformation is high. It tends to be low. Furthermore, when crushed so that the seed size becomes smaller, the degree of deformation tends to decrease. Then, in the subsequent step b, the silicic acid solution to be added deposits while invading the silica surface and the inside of the particles (seed particles) made of highly deformed silica-based gel, and reacts preferentially with the pores between the primary particles. While the pores are filled, silica is deposited on the outer surface of the particles to promote the growth of the particles (in the following description, this is referred to as build-up). By this build-up, the convex part of the outer surface of the particle contributes to the increase of the outer diameter, and the concave part contributes less to the outer shape. It is possible to produce deformed silica-based particles having a large diameter and a high degree of deformity.

また、本発明では製造原料として比表面積が小さく一次径が大きなシリカ系ゲルを用いているため、その強度は弱い。そのため、重量平均粒子径が数百nmとなるようにシリカ系ゲルを粉砕しても、粉砕時に数十nm程度の微粒も同時に発生する。したがって、シリカ系ゲルを製造原料として使用した場合、その粉砕によって得られた粒子は小粒子から大粒子まで幅広い。そのため、本発明のシリカ系粒子群は、重量平均粒子径が大きく、微粒も同時に備えるため、歪度および尖度が高くなる。 Further, in the present invention, since a silica-based gel having a small specific surface area and a large primary diameter is used as a manufacturing raw material, its strength is weak. Therefore, even if the silica-based gel is pulverized so that the weight average particle diameter is several hundred nm, fine particles of about several tens of nm are also generated at the same time during pulverization. Therefore, when a silica-based gel is used as a production raw material, the particles obtained by pulverization thereof range from small particles to large particles. Therefore, the silica-based particle group of the present invention has a large weight average particle diameter and also includes fine particles at the same time, resulting in high skewness and kurtosis.

ここで製造原料として使用するシリカ系ゲルは、解砕され易いゲルが好ましく、例えば、水ガラス法のゲルを洗浄したウエットのヒドロゲルや、そのヒドロゲル等を乾燥して得られる乾燥シリカゲル、キセロゲル、ホワイトカーボン、沈降法シリカ、ゲル法シリカ、アルコキシド法によるゲルなどが好ましい。アルコキシド法によるゲルは、脱水縮合する水酸基が少ないためその乾燥パウダーは軟らかく、生産性の良い乾燥パウダーとして用いることができる。シリカ系ゲルを解砕して得られる異形シリカ系ゲルからなる粒子の粒度分布は、一定範囲に制御されていることが好ましく、解砕し難い大きなゲルの塊であると、解砕に時間がかかり、粒度分布が広くなる傾向があるので好ましくない。 The silica-based gel used as a raw material for production is preferably a gel that is easily crushed. For example, a wet hydrogel obtained by washing a gel of the water glass method, or a dry silica gel, xerogel, or white obtained by drying the hydrogel or the like. Carbon, precipitation silica gel, gel silica, gel by alkoxide method and the like are preferable. Since the gel obtained by the alkoxide method has few hydroxyl groups that undergo dehydration condensation, the dry powder is soft and can be used as a highly productive dry powder. It is preferable that the particle size distribution of the particles composed of the deformed silica-based gel obtained by crushing the silica-based gel is controlled within a certain range, and if it is a large gel mass that is difficult to crush, it takes time to crush. This is not preferable because it tends to increase the particle size distribution.

本発明で使用するシリカ系ゲルは、比表面積が50〜600m2/gの範囲が好ましい。比表面積が50m2/gより小さいと、シリカ系ゲルの一次粒子間の細孔が少ないため、解砕して得た異形シリカ系ゲルからなる粒子を含む溶液に珪酸液を添加したときに、異形シリカ系ゲルからなる粒子の一次粒子間の細孔に浸透する珪酸の量が少なく、この細孔が珪酸との反応によって埋められ難くなってしまい、添加した珪酸液は粒子を丸く成長させるように消費され、異形を保ち難くなる傾向がある。また、比表面積が600m2/gより大きいと、粒子強度が強すぎて難解砕となり、粗大粒子を低減させるため、あるいは所定の粒子径に調整するために長時間の解砕が必要となり、結果的に、異形度が低くなる傾向にある。
またシリカ系ゲルのサイズ(粒子径)は、1μm〜10mmの範囲が望ましい。
The silica-based gel used in the present invention preferably has a specific surface area in the range of 50 to 600 m 2 / g. When the specific surface area is smaller than 50 m 2 / g, the pores between the primary particles of the silica-based gel are small. Therefore, when the silicic acid solution is added to the solution containing the particles of the deformed silica-based gel obtained by crushing, The amount of silicic acid that permeates the pores between the primary particles of the irregularly shaped silica-based gel is small, and it becomes difficult for these pores to be filled by the reaction with silicic acid, so that the added silicic acid solution causes the particles to grow round. It is consumed by and tends to be difficult to maintain its irregular shape. Further, if the specific surface area is larger than 600 m 2 / g, the particle strength is too strong and difficult to crush, and long-time crushing is required to reduce coarse particles or to adjust the particle size to a predetermined value. Therefore, the degree of deformation tends to be low.
The size (particle size) of the silica-based gel is preferably in the range of 1 μm to 10 mm.

そして、前記シリカ系ゲルは、アルカリ性下で湿式解砕して高異形シリカ系ゲルからなる粒子にするが、特に比表面積が50〜600m2/g程度の比較的柔らかいシリカ系ゲルをビーズミルなどの強いシェアの下で変形と解砕を同時に行うことによって、異形シリカ系ゲルからなる粒子を高い異形度を備えた粒子に調製できる。解砕は、例えば、ガラスメジアを入れたサンドミル粉砕機やビーズミルなどを用いると良い。解砕はできるだけ短い時間で行うのが好ましい。 The silica-based gel is wet-crushed under alkaline conditions to form particles composed of a highly deformed silica-based gel. In particular, a relatively soft silica-based gel having a specific surface area of about 50 to 600 m 2 / g is used in a bead mill or the like. By simultaneously deforming and crushing under a strong shear, particles made of irregularly shaped silica-based gel can be prepared into particles having a high degree of irregularity. For crushing, for example, a sand mill crusher containing a glass medium or a bead mill may be used. Crushing is preferably performed in the shortest possible time.

通常、ビーズミルなどで粉体を粉砕する場合には、粉砕時間に比例して粉体の粒子径が小さくなるが、比表面積が小さく一次径が大きなシリカ系ゲルは、短時間で、重量平均粒子径が60~250nm程度の粒子に解砕され、この高異形シリカ系ゲルからなる粒子は解砕前の比表面積を保ったまま、一次粒子間のネックをかなり多く含んだ粗な構造を有している。従って、この粒子をそのまま研磨材として用いても、強度不足のため崩れやすく、非常に低い研磨速度しか得られない。そこで、本発明では、後の工程bにおいて、高異形多リカ系ゲルからなる粒子を含む溶液に珪酸液を添加して、異形シリカ系ゲルからなる粒子内部の一次粒子間の細孔を珪酸液でビルドアップして埋めることによって粒子の強度を高めている。ここで、ビルドアップに使用する珪酸液は、アルコキシド由来であっても、珪酸ナトリウム由来であっても、珪酸アミンであっても構わない。また一次粒子間を埋めることができれば珪酸に限定されず、珪酸のアルカリ塩、アルカリ土類塩などの珪酸塩類であっても構わない。 Normally, when powder is crushed with a bead mill or the like, the particle size of the powder becomes smaller in proportion to the crushing time, but a silica-based gel having a small specific surface area and a large primary diameter requires a short time and weight average particles. The particles are crushed into particles having a diameter of about 60 to 250 nm, and the particles made of this highly deformed silica-based gel have a coarse structure containing a considerable number of necks between the primary particles while maintaining the specific surface area before crushing. ing. Therefore, even if these particles are used as they are as an abrasive, they tend to collapse due to insufficient strength, and only a very low polishing rate can be obtained. Therefore, in the present invention, in the subsequent step b, the silicic acid solution is added to the solution containing the particles made of the highly deformed polyrica gel, and the pores between the primary particles inside the particles made of the deformed silica gel are formed into the silicic acid solution. The strength of the particles is increased by building up and filling with. Here, the silicic acid solution used for build-up may be derived from alkoxide, sodium silicate, or amine silicate. Further, as long as the space between the primary particles can be filled, the content is not limited to silicic acid, and silicates such as an alkaline salt of silicic acid and an alkaline earth salt may be used.

工程aにおいて、シリカ系ゲルはアルカリ性下、つまりアルカリ性条件で湿式解砕し、そのアルカリ性はpH8.0〜11.5の範囲が好ましい。pHがアルカリ領域より下がるにつれて徐々にマイナスの電位が下がり、中性領域〜酸性領域では不安定になるため、解砕により生じた粒子が安定に存在できずに直ぐ凝集してしまう傾向がある。また、pHが11.5超であるとシリカの溶解が促進されるため、やはり凝集する傾向がある。前記湿式解砕時のpHは好適には、8.5〜11.0の範囲が推奨される。
なお、ここでpHを調整する方法は特に限定されない。例えば水酸化ナトリウムなどを添加して調整することができる。
In step a, the silica-based gel is wet-crushed under alkaline conditions, that is, under alkaline conditions, and the alkalinity is preferably in the range of pH 8.0 to 11.5. As the pH drops below the alkaline range, the negative potential gradually drops and becomes unstable in the neutral to acidic range, so that the particles generated by crushing cannot exist stably and tend to agglomerate immediately. Further, when the pH is more than 11.5, the dissolution of silica is promoted, so that it also tends to aggregate. The pH at the time of wet crushing is preferably in the range of 8.5 to 11.0.
The method of adjusting the pH here is not particularly limited. For example, it can be adjusted by adding sodium hydroxide or the like.

前記湿式解砕により得られた高異形シリカ系ゲルからなる粒子の重量平均粒子径は、60〜250nmの範囲であることが好ましい。高異形シリカ系ゲルからなる粒子の重量平均粒子径が60nmより小さいと、その後珪酸液を添加して粒子を成長させても、研磨材に適する大きさの粒子径にするのが難しい場合がある。また、高異形シリカ系ゲルからなる粒子の重量平均粒子径が250nmより大きいと、研磨材に適する粒子径を超える場合があるのであまり好ましくない。このような研磨材に適する粒子径を超える粗大な粒子は、スクラッチの原因となる可能性がある。解砕によって粗大粒子や大粒子は優先的に解砕される傾向にあるが、高異形シリカ系ゲルに残存した粗大粒子を除去することを目的として、遠心分離を行っても構わない。前記高異形シリカ系ゲルからなる粒子の重量平均粒子径は好ましくは80〜250nmの範囲が推奨される。 The weight average particle size of the particles made of the highly deformed silica-based gel obtained by the wet crushing is preferably in the range of 60 to 250 nm. If the weight average particle size of the particles made of a highly deformed silica-based gel is smaller than 60 nm, it may be difficult to obtain a particle size suitable for the abrasive even if the particles are subsequently grown by adding a silicic acid solution. .. Further, if the weight average particle size of the particles made of the highly deformed silica-based gel is larger than 250 nm, the particle size suitable for the abrasive may be exceeded, which is not very preferable. Coarse particles that exceed the particle size suitable for such abrasives can cause scratches. Coarse particles and large particles tend to be preferentially crushed by crushing, but centrifugation may be performed for the purpose of removing the coarse particles remaining on the highly deformed silica-based gel. The weight average particle size of the particles made of the highly deformed silica-based gel is preferably in the range of 80 to 250 nm.

ここで高異形シリカ系ゲルからなる粒子の重量平均粒子径は、前述のシリカ系粒子群の重量平均粒子径(D1)と同様の方法によって測定して得た値を意味するものとする。 Here, the weight average particle size of the particles made of the highly deformed silica-based gel means a value obtained by measuring by the same method as the weight average particle size (D 1) of the silica-based particle group described above.

なお、この解砕は、材質、大きさの異なるメジアで多段階に行うことができる。例えば、シリカ系ゲルをサイズの大きなジルコニアメジアで解砕を行うと、強い剪断力により、高速で短時間に1段目解砕を行うことができる。次に1段目よりもサイズの小さなガラスメジアで2段目の解砕を行うと、中程度の剪断力によって解砕が進行し、所望の粒子径に調整することができる。この際、一次粒子間の強度の弱い部分から破壊されるため、微細化と同時に形状の異形化が生じる傾向にある。またアルカリ性条件下での湿式解砕であるため、高異形シリカ系ゲルからなる粒子の一部が溶解し、一次粒子間のネック部を優先的に埋めることができるため、解砕時には過度な微細化は進まない。 This crushing can be performed in multiple stages using media of different materials and sizes. For example, when a silica-based gel is crushed with a large-sized zirconia medium, the first-stage crushing can be performed at high speed and in a short time due to a strong shearing force. Next, when the second stage of crushing is performed with a glass medium smaller in size than the first stage, the crushing proceeds with a moderate shearing force, and the particle size can be adjusted to a desired value. At this time, since the parts with weak strength between the primary particles are destroyed, the shape tends to be deformed at the same time as the miniaturization. In addition, since the wet crushing is performed under alkaline conditions, some of the particles made of highly deformed silica-based gel are dissolved, and the neck portion between the primary particles can be preferentially filled, so that the crushing is excessively fine. The conversion does not progress.

〔工程b〕
この工程は、高異形シリカ系ゲルからなる粒子を含む溶液にアルカリ性下で珪酸液を添加して加温し、高異形シリカ系ゲルからなる粒子の一次粒子間の細孔を珪酸との反応によって埋めると共に異形のまま粒子を成長させるビルドアップ工程である。前記高異形シリカ系ゲルからなる粒子を含む溶液のSiO2濃度は、1〜10質量%の範囲が好ましい。高異形シリカ系ゲルからなる粒子を含む溶液のSiO2濃度が1質量%より少ないと、異形シリカ系粒子を製造する効率が低下する傾向がある。また、SiO2濃度が10質量%より多いと、微小シリカ核が発生し、異形性が保てず、異形シリカ系粒子の粒子成長が不均一になりやすい傾向がある。
なお、この工程bは、高異形シリカ系ゲルからなる粒子を水熱処理しながら珪酸液を添加する方法で行ってもよい。この方法では、添加した珪酸液によって過飽和となり、さらに粒子の一部の溶解も生じながら、シリカが沈着して粒子成長するが、一次粒子間のネック部は溶解よりも沈着速度が早いため、一次粒子間の細孔が優先的に埋まっていく。
[Step b]
In this step, a silicic acid solution is added to a solution containing particles made of a highly deformed silica gel under alkaline conditions to heat the solution, and the pores between the primary particles of the particles made of the highly deformed silica gel are reacted with silicic acid. It is a build-up process that grows particles while filling them in a deformed shape. The SiO 2 concentration of the solution containing the particles composed of the highly deformed silica-based gel is preferably in the range of 1 to 10% by mass. If the SiO 2 concentration of the solution containing the particles composed of the highly deformed silica-based gel is less than 1% by mass, the efficiency of producing the deformed silica-based particles tends to decrease. Further, when the SiO 2 concentration is more than 10% by mass, fine silica nuclei are generated, the deformability cannot be maintained, and the particle growth of the deformed silica-based particles tends to be non-uniform.
In addition, this step b may be performed by a method of adding a silicic acid solution while hydrothermally treating particles made of a highly deformed silica-based gel. In this method, the added silicic acid solution causes supersaturation, and while some particles are dissolved, silica is deposited and the particles grow. However, the neck portion between the primary particles has a faster deposition rate than the dissolution, so that the primary particles are deposited. The pores between the particles are preferentially filled.

前記加温温度は60℃〜170℃の範囲が好ましい。60℃より低いと高異形シリカ系ゲルからなる粒子の成長が遅い傾向があり、170℃より高いと得られる異形シリカ系粒子が球状になりやすいからである。前記加温温度は、より好適には60℃〜100℃の範囲が推奨される。 The heating temperature is preferably in the range of 60 ° C. to 170 ° C. This is because if the temperature is lower than 60 ° C., the particles made of the highly deformed silica-based gel tend to grow slowly, and if the temperature is higher than 170 ° C., the obtained deformed silica-based particles tend to be spherical. The heating temperature is more preferably in the range of 60 ° C to 100 ° C.

さらに、高異形シリカ系ゲルからなる粒子を含む溶液に珪酸液を添加する時のpHは9〜12.5の範囲が好ましい。pHが9未満ではシリカの溶解度が低いため、過飽和度が著しく高くなり、添加した珪酸液は粒子成長に消費されずに微粒子として生成し易い。また負の電位も低くなるため、粒子が凝集し易くなる。さらに、水酸基の解離が不十分なので一次粒子との反応性が低下し、ネック部の補強が十分でなくなる。また、pH12.5より高いとシリカの溶解が促進される可能性がある。 Further, the pH when the silicic acid solution is added to the solution containing the particles composed of the highly deformed silica-based gel is preferably in the range of 9 to 12.5. When the pH is less than 9, the solubility of silica is low, so that the degree of supersaturation becomes extremely high, and the added silicic acid solution is not consumed for particle growth and is easily generated as fine particles. In addition, since the negative potential is also low, the particles are likely to aggregate. Further, since the dissociation of the hydroxyl group is insufficient, the reactivity with the primary particles is lowered, and the neck portion is not sufficiently reinforced. Further, if the pH is higher than 12.5, the dissolution of silica may be promoted.

高異形シリカ系ゲルからなる粒子を含む溶液は、pHを前述の範囲とするために、必要に応じてpHを調整する。調整手段は格別に制限されるものではないが、通常はアルカリ性物質を添加して調整する。この様なアルカリ性物質の例としては、水酸化ナトリウム、水ガラスなどを挙げることができる。高異形シリカ系ゲルからなる粒子を含む溶液に珪酸液を添加する時のpHとして好適には、9.5〜12.0の範囲が推奨される。 The pH of the solution containing the particles of the highly deformed silica-based gel is adjusted as necessary in order to keep the pH in the above range. The adjusting means is not particularly limited, but it is usually adjusted by adding an alkaline substance. Examples of such alkaline substances include sodium hydroxide, water glass and the like. The pH when the silicic acid solution is added to the solution containing the particles of the highly deformed silica-based gel is preferably in the range of 9.5 to 12.0.

珪酸液の添加量は、前記高異形シリカ系ゲルからなる粒子を含む溶液のSiO2モル濃度に対して該珪酸液のSiO2モル濃度が0.5〜20モル倍になる範囲が好ましい。珪酸液の添加量が前記範囲より少ないと、一次粒子間の強度を十分に高めることができないため、粒子の強度が低下する傾向にあるからである。また珪酸液などを添加して、粒子成長させると、通常、異形度やアスペクト比が低下するが、珪酸液の添加量が前記範囲よりも多いと、粒子の異形度が著しく低下し、所望の異形度が保てなくなる傾向にあるからである。さらに、粒子成長時には大粒子成分と比較して小粒子成分が優先的に粒子成長するため、珪酸液の添加量が前記範囲よりも多いと、所望のアスペクト比を備える小粒子側成分が得にくくなる傾向にある。
また、珪酸液は連続的または断続的に添加することが望ましい。
The addition amount of the silicic acid solution is in the range of SiO 2 molar該珪acid liquid to SiO 2 molar concentration of the solution containing the particles consisting of the high profiled silica gel is 0.5 to 20 times by mole are preferable. This is because if the amount of the silicic acid solution added is less than the above range, the strength between the primary particles cannot be sufficiently increased, so that the strength of the particles tends to decrease. Further, when the particles are grown by adding a silicic acid solution or the like, the degree of deformation and the aspect ratio are usually lowered, but when the amount of the silicic acid solution added is larger than the above range, the degree of deformation of the particles is significantly lowered, which is desired. This is because there is a tendency that the degree of deformation cannot be maintained. Further, since the small particle component grows preferentially as compared with the large particle component during particle growth, if the amount of the silicic acid solution added is larger than the above range, it is difficult to obtain the small particle side component having a desired aspect ratio. It tends to be.
Further, it is desirable to add the silicic acid solution continuously or intermittently.

珪酸液は、高異形シリカ系ゲルからなる粒子の一次粒子間の細孔を通じて粒子内部に浸透し、該粒子のネック部に沈着し比表面積を小さくすることで、該粒子の強度を高める。この工程bにおいて、高異形シリカ系ゲルからなる粒子の比表面積は、136m2/g以下、より好ましくは比表面積9m2/g〜136m2/gの範囲にすることが望ましい。異形シリカ系ゲルからなる粒子の比表面積が136m2/gより大きいと、得られる異形シリカ系粒子のサイズが小さ過ぎるため、研磨速度が遅くなる傾向にある。
なお、異形シリカ系ゲルからなる粒子の比表面積は、後記の実施例の「比表面積の測定」に記したとおり、BET法によって測定する。
The silicic acid solution permeates into the inside of the particles through the pores between the primary particles of the particles made of a highly deformed silica-based gel, and deposits on the neck portion of the particles to reduce the specific surface area, thereby increasing the strength of the particles. In this step b, the specific surface area of particles consisting of high profiled silica gel, 136m 2 / g or less, it is desirable and more preferably in the range of the specific surface area 9m 2 / g~136m 2 / g. If the specific surface area of the particles made of the deformed silica-based gel is larger than 136 m 2 / g, the size of the obtained deformed silica-based particles is too small, and the polishing rate tends to be slow.
The specific surface area of the particles made of the deformed silica-based gel is measured by the BET method as described in "Measurement of specific surface area" of the examples described later.

外部から滴下される珪酸液は、液相から一様に異形シリカ系ゲルの表面に降り注ぎ、異形シリカ系ゲルからなる粒子の外表面に結合して粒子の外形を成長させるので、異形を保ったままで粒子径の大きな異形シリカ系粒子を得ることができる。粒子成長後の異形シリカ系粒子の粒子径は、重量平均粒子径60〜400nmの範囲となることが好ましい。
ここで異形シリカ系粒子の重量平均粒子径は、前述のシリカ系粒子群の重量平均粒子径(D1)と同様の方法によって測定して得た値を意味するものとする。
The silicic acid solution dropped from the outside uniformly falls on the surface of the deformed silica gel from the liquid phase and binds to the outer surface of the particles made of the deformed silica gel to grow the outer shape of the particles, so that the deformed shape is maintained. It is possible to obtain irregularly shaped silica-based particles having a large particle size. The particle size of the deformed silica-based particles after the particle growth is preferably in the range of a weight average particle size of 60 to 400 nm.
Here, the weight average particle size of the deformed silica-based particles means a value obtained by measuring by the same method as the weight average particle size (D 1) of the silica-based particle group described above.

〔工程c〕
この工程は、成長した異形シリカ系粒子を含むシリカ系粒子群を濃縮し、回収する工程である。具体的には、例えば、成長した異形シリカ系粒子を含む溶液を室温〜40℃程度に冷却し、限外ろ過膜などを用いて濃縮し、エバポレータなどを用いてさらに濃縮して残ったシリカ系粒子群を回収すればよい。さらに粗大な粒子を除去するために、遠心分離をしてもよい。乾燥による粗大な凝集塊が生じ難いという観点から、濃縮は、限外ろ過膜による濃縮が好ましい。
[Step c]
This step is a step of concentrating and recovering a group of silica-based particles containing grown irregularly shaped silica-based particles. Specifically, for example, a solution containing grown irregular silica-based particles is cooled to about room temperature to 40 ° C., concentrated using an ultrafiltration membrane or the like, and further concentrated using an evaporator or the like to remain silica-based. The particle group may be collected. Centrifugation may be used to remove even coarser particles. From the viewpoint that coarse agglomerates are unlikely to occur due to drying, the concentration is preferably concentrated by an ultrafiltration membrane.

以下、本発明の実施例を比較例と共に示す。なお、実施例および比較例において、シリカ系粒子群の比表面積の測定、比表面積換算粒子径(D2)の算出、重量平均粒子径(D1)の測定、投影面積相当粒子径(D3)の測定・算出、体積基準粒子径分布における歪度・尖度の算出、体積基準粒子径分布の波形分離、体積基準粒子径分布における体積の測定、小粒子側成分のアスペクト比算出、変動係数の算出、平均面積(S1)・平均外周長と等価な円の面積(S2)の測定・算出、異形シリカ系粒子のコア内部細孔の平均細孔径測定・算出、異形シリカ系粒子の被覆シリカ層の平均厚さ測定・算出および研磨試験は以下のように行った。 Hereinafter, examples of the present invention will be shown together with comparative examples. In the examples and comparative examples, the specific surface area of the silica-based particle group was measured, the specific surface area equivalent particle diameter (D 2 ) was calculated, the weight average particle diameter (D 1 ) was measured, and the projected area equivalent particle diameter (D 3). ) Measurement / calculation, calculation of skewness / kurtosis in volume reference particle size distribution, waveform separation of volume reference particle size distribution, volume measurement in volume reference particle size distribution, aspect ratio calculation of small particle side component, coefficient of variation Calculation, measurement and calculation of the average area (S 1 ) and the area of the circle equivalent to the average outer circumference (S 2 ), measurement and calculation of the average pore size of the core internal pores of the deformed silica particles, The average thickness measurement / calculation of the coated silica layer and the polishing test were performed as follows.

[比表面積の測定]
実施例1〜4、および比較例3〜5については、BET法により比表面積を測定、算出した。具体的には、測定対象のシリカゾル50mlを硝酸によりpHを3.5に調整し、これに1−プロパノールを40ml加えて110℃で16時間乾燥した試料について、乳鉢で粉砕後、マッフル炉にて500℃、1時間焼成して測定用試料とした。そして、比表面積測定装置(ユアサアイオニクス製、型番マルチソーブ12)を使用し、窒素吸着法(BET法)を用いて窒素の吸着量からBET1点法により比表面積を算出した。
比表面積測定装置では、焼成後の試料0.5gを測定セルに取り、窒素30v%/ヘリウム70v%混合ガス気流中、300℃で20分間脱ガス処理を行い、その上で試料を上記混合ガス気流中で液体窒素温度に保ち、窒素を試料に平衡吸着させた。次いで、上記混合ガスを流しながら試料温度を徐々に室温まで上昇させ、その間に脱離した窒素の量を検出し、予め作成した検量線により試料中のシリカ微粒子の比表面積を算出した。
なお、シリカ系ゲルを解砕した(ビルドアップを行っていない)比較例1、2および6については、タイトレーション法により比表面積を測定、算出した。具体的には、SiO2として1.5gに相当する試料をビーカーに採取してから、恒温反応槽(25℃)に移し、純水を加えて液量を90mlにし(以下の操作は、25℃に保持した恒温反応槽中にて行う)、次に、pH3.6になるように0.1モル/L塩酸水溶液を加えた。さらに、塩化ナトリウムを30g加え、純水で150mlに希釈し、10分間攪拌した。そして、pH電極をセットし、攪拌しながら0.1モル/L水酸化ナトリウム溶液を滴下してpH4.0に調整した。さらに、pH4.0に調整した試料を0.1モル/L水酸化ナトリウム溶液で滴定し、pH8.7〜9.3の範囲での滴定量とpH値を4点以上記録して、0.1モル/L水酸化ナトリウム溶液の滴定量をX、その時のpH値をYとして、検量線を作製した。そして、所定の式からSiO21.5g当たりのpH4.0〜9.0までに要する0.1モル/L水酸化ナトリウム溶液の消費量を求め、これを用いて、所定の式に従って比表面積を求めた。
[Measurement of specific surface area]
For Examples 1 to 4 and Comparative Examples 3 to 5, the specific surface area was measured and calculated by the BET method. Specifically, the pH of 50 ml of the silica sol to be measured was adjusted to 3.5 with nitric acid, 40 ml of 1-propanol was added thereto, and the sample was dried at 110 ° C. for 16 hours, pulverized in a mortar, and then in a muffle furnace. It was calcined at 500 ° C. for 1 hour to prepare a sample for measurement. Then, using a specific surface area measuring device (manufactured by Yuasa Ionics, model number Multisorb 12), the specific surface area was calculated from the amount of nitrogen adsorbed by the BET 1-point method using the nitrogen adsorption method (BET method).
In the specific surface area measuring device, 0.5 g of the fired sample is taken in a measuring cell, degassed in a mixed gas stream of 30 v% nitrogen / 70 v% helium at 300 ° C. for 20 minutes, and then the sample is subjected to the above mixed gas. The temperature was maintained at the liquid nitrogen temperature in the air stream, and nitrogen was equilibrium-adsorbed to the sample. Next, the sample temperature was gradually raised to room temperature while flowing the mixed gas, the amount of nitrogen desorbed during that period was detected, and the specific surface area of the silica fine particles in the sample was calculated from a calibration curve prepared in advance.
The specific surface areas of Comparative Examples 1, 2 and 6 in which the silica-based gel was crushed (not built up) were measured and calculated by the titration method. Specifically, after collecting a sample corresponding to 1.5 g of SiO 2 in a beaker, the sample is transferred to a constant temperature reaction tank (25 ° C.), and pure water is added to bring the liquid volume to 90 ml (the following operation is 25). It is carried out in a constant temperature reaction vessel maintained at ° C.), and then a 0.1 mol / L hydrochloric acid aqueous solution was added so that the pH became 3.6. Further, 30 g of sodium chloride was added, the mixture was diluted with pure water to 150 ml, and the mixture was stirred for 10 minutes. Then, the pH electrode was set, and a 0.1 mol / L sodium hydroxide solution was added dropwise with stirring to adjust the pH to 4.0. Further, the sample adjusted to pH 4.0 was titrated with a 0.1 mol / L sodium hydroxide solution, and the titration amount in the range of pH 8.7 to 9.3 and the pH value were recorded at 4 points or more. A titration line was prepared with the titration amount of 1 mol / L sodium hydroxide solution being X and the pH value at that time being Y. Then, the consumption amount of 0.1 mol / L sodium hydroxide solution required for pH 4.0 to 9.0 per 1.5 g of SiO 2 was determined from a predetermined formula, and using this, the specific surface area was determined according to the predetermined formula. Asked.

[比表面積換算粒子径(D2)の算出]
上記方法によって測定した比表面積(SA)と、粒子の密度(ρ=2.2)を用い、D2=6000/(SA×ρ)の式から、比表面積換算粒子径(D2)を算出した。
[Calculation of specific surface area equivalent particle size (D 2)]
Using the specific surface area (SA) measured by the above method and the particle density (ρ = 2.2), the specific surface area equivalent particle size (D 2 ) is calculated from the formula D 2 = 6000 / (SA × ρ). did.

[重量平均粒子径(D1)の測定]
シリカ系粒子分散液を0.05質量%ドデシル硫酸ナトリウム水溶液で希釈し、固形分濃度で2質量%としたものを、ディスク遠心式粒子径分布測定装置(型番:DC24000UHR、CPS instruments社製)に、0.1mlをシリンジで注入して、8〜24質量%のショ糖の密度勾配溶液中で18000rpmの条件で重量平均粒子径(D1)の測定を行った。シリカ系ゲルの解砕品(高異形シリカ系ゲルからなる粒子)についても、同様の方法で測定を行った。
[Measurement of weight average particle size (D 1)]
The silica-based particle dispersion was diluted with a 0.05 mass% sodium dodecyl sulfate aqueous solution to give a solid content concentration of 2 mass%, and the mixture was used in a disk centrifugal particle size distribution measuring device (model number: DC24000UHR, manufactured by CPS instruments). , 0.1 ml was injected with a syringe, and the weight average particle size (D 1 ) was measured under the condition of 18000 rpm in a density gradient solution of 8 to 24% by mass of sucrose. The crushed silica-based gel (particles composed of highly deformed silica-based gel) was also measured by the same method.

[投影面積相当粒子径(D3)の測定・算出]
シリカ系粒子群における投影面積相当粒子径(D3)の測定・算出は、画像解析法により行った。具体的には、まず走査型電子顕微鏡(SEM)を用いて、シリカ系粒子表面の任意の箇所を、倍率3000倍で1視野当たり1.1×10-3mm2の面積で15視野撮影した。そして、この各視野において撮影された個々の画像に含まれる全てのシリカ微粒子について、画像解析システムを用いた画像解析法によって個々の粒子の投影面積を測定し、この測定された各面積に相当する円形の粒子の粒子径(円の直径)を算出し、これらの個数平均を投影面積相当粒子径(D3)とした。
[Measurement / calculation of particle size (D 3) equivalent to projected area]
The measurement and calculation of the particle size (D 3 ) corresponding to the projected area in the silica-based particle group was performed by an image analysis method. Specifically, first, using a scanning electron microscope (SEM), an arbitrary part on the surface of silica-based particles was photographed in 15 fields with an area of 1.1 × 10 -3 mm 2 per field at a magnification of 3000 times. .. Then, for all the silica fine particles contained in the individual images taken in each of the visual fields, the projected area of each particle is measured by an image analysis method using an image analysis system, and corresponds to each of the measured areas. The particle size (circle diameter) of the circular particles was calculated, and the average number of these was taken as the particle size equivalent to the projected area (D 3 ).

[体積基準粒子径分布における尖度・歪度の算出]
前述のディスク遠心式粒子径分布測定装置を用いた方法により、体積基準粒子径分布も測定した。そして、得られた体積基準粒子径分布データを使用して、SAS Institute Japan社製JMP Ver.13.2を用いて尖度および歪度を算出した。なお、体積基準粒子径粒度分布において、所定の粒子径の頻度が負の値の場合は、頻度をゼロとして算出した。
[Calculation of kurtosis / skewness in volume-based particle size distribution]
The volume-based particle size distribution was also measured by the method using the above-mentioned disk centrifugal particle size distribution measuring device. Then, using the obtained volume-based particle size distribution data, JMP Ver. Kurtosis and skewness were calculated using 13.2. When the frequency of the predetermined particle size was a negative value in the volume-based particle size distribution, the frequency was set to zero for calculation.

[体積基準粒子径分布の波形分離]
前述の体積基準粒子径分布測定データを、グラフ作成・データ解析ソフト Origin(OriginLab Corporation社製)のピークアナライザを使用して解析した。まず、基線を0、ピークタイプをGaussianに設定し、粒度分布の極大点をピーク位置として選択して、重み付けなしでピークフィッティングを行い、算出されたピークが以下の条件1および2から逸脱していないことを確認し、逸脱している場合は、下記条件1および2を満たすまでピーク位置を分布範囲内の任意の位置にずらしてピークフィッティングを繰り返した。その後、補正R二乗値が0.99以下である場合は分布範囲内の任意の位置にピークを追加し、補正R二乗値が0.99以上になるまでピークフィッティングを繰り返した。このときの分離されたピークの数をピークの個数とした。
条件1:算出されたそれぞれのピークが元の分布より大きい値を取らないこと。
条件2:算出されたそれぞれのピークが負の値を取らないこと。
[Waveform separation of volume-based particle size distribution]
The above-mentioned volume-based particle size distribution measurement data was analyzed using a peak analyzer of the graph creation / data analysis software Origin (manufactured by OriginLab Corporation). First, the baseline is set to 0, the peak type is set to Gaussian, the maximum point of the particle size distribution is selected as the peak position, peak fitting is performed without weighting, and the calculated peak deviates from the following conditions 1 and 2. It was confirmed that there was no deviation, and if it deviated, the peak position was shifted to an arbitrary position within the distribution range until the following conditions 1 and 2 were satisfied, and peak fitting was repeated. After that, when the corrected R-squared value was 0.99 or less, a peak was added at an arbitrary position in the distribution range, and peak fitting was repeated until the corrected R-squared value became 0.99 or more. The number of separated peaks at this time was defined as the number of peaks.
Condition 1: Each calculated peak does not take a value larger than the original distribution.
Condition 2: Each calculated peak does not take a negative value.

[体積基準粒子径分布における体積の測定]
シリカ系粒子群の体積基準粒子径分布における全体積(Q1)、これを波形分離した結果得られた分離ピークの各成分の体積割合、最大粒子成分の体積割合および0.7μm以上の粒子の体積(Q2)は、前述のディスク遠心式粒子径分布測定装置を用いて測定した。
[Measurement of volume in volume-based particle size distribution]
Total volume in volume-based particle size distribution of the silica-based particles (Q 1), which waveform volume ratio of each component of the separated results obtained separation peaks, the volume fraction and 0.7μm or more particles of the maximum particle component The volume (Q 2 ) was measured using the above-mentioned disk centrifugal particle size distribution measuring device.

[小粒子側成分のアスペクト比算出]
小粒子側成分のアスペクト比は、走査型電子顕微鏡(SEM)および画像解析システムを用いてシリカ系粒子群の総粒子数をカウントし、また、各粒子の面積を算出し、その面積と等しい面積の円の直径を求め、それを粒子径とする。そして、得られた粒子径をサイズ順にならべ、小さい側から数えて粒子個数の1/3までの粒子を小粒子側成分とし、そのアスペクト比(最小外接四角の長径/短径比)の平均値を「小粒子側成分のアスペクト比」とした。
[Aspect ratio calculation of small particle side components]
The aspect ratio of the small particle side component is equal to the area obtained by counting the total number of particles in the silica-based particle group using a scanning electron microscope (SEM) and an image analysis system, and calculating the area of each particle. Find the diameter of the circle and use it as the particle size. Then, the obtained particle diameters are arranged in order of size, and particles up to 1/3 of the number of particles counted from the smaller side are used as small particle side components, and the average value of the aspect ratio (major axis / minor axis ratio of the minimum circumscribing square) is taken. Was defined as the "aspect ratio of the small particle side component".

[変動係数の算出]
シリカ系粒子群の体積基準粒子径分布を波形分離した結果得られた分離ピークの各成分の体積割合の変動係数、および体積基準粒子径分布の粒子径の変動係数は、前述の体積基準粒子径分布測定データからそれぞれの標準偏差および平均値を算出し、この標準偏差を前記平均値で割り、これを百分率で示すことにより算出した。
[Calculation of coefficient of variation]
The coefficient of variation of the volume ratio of each component of the separation peak obtained as a result of waveform-separating the volume-based particle size distribution of the silica-based particle group and the coefficient of variation of the particle size of the volume-based particle size distribution are the above-mentioned volume-based particle size. Each standard deviation and average value were calculated from the distribution measurement data, and this standard deviation was divided by the average value and expressed as a percentage.

[平均面積(S1)・平均外周長と等価な円の面積(S2)の測定・算出]
シリカ系粒子群における平均面積(S1)および平均外周長と等価な円の面積(S2)の測定は、画像解析法により行った。具体的には、まず走査型電子顕微鏡(SEM)を用いて、シリカ系粒子表面の任意の箇所を、倍率3000倍で1視野当たり1.1×10-3mm2の面積で15視野撮影した。そして、この各視野において撮影された個々の画像に含まれる全てのシリカ微粒子について、画像解析システムを用いた画像解析法によってそれぞれ面積および外周長を測定し、この測定された各面積および各外周長データから平均面積(S1)および平均外周長(単純平均値)を算出し、さらにこの平均外周長から、平均外周長と等価な円(平均外周長と同じ円周である円)の面積(S2)を算出した。
[Measurement / calculation of the area of a circle (S 2 ) equivalent to the average area (S 1) and average outer circumference length]
The measurement of the average area (S 1 ) and the area of the circle equivalent to the average outer peripheral length (S 2 ) in the silica-based particle group was performed by an image analysis method. Specifically, first, using a scanning electron microscope (SEM), an arbitrary part on the surface of silica-based particles was photographed in 15 fields with an area of 1.1 × 10 -3 mm 2 per field at a magnification of 3000 times. .. Then, the area and the outer peripheral length of all the silica fine particles contained in the individual images taken in each of the visual fields are measured by an image analysis method using an image analysis system, and the measured areas and the outer peripheral lengths are measured. The average area (S 1 ) and the average outer circumference length (simple average value) are calculated from the data, and from this average outer circumference length, the area of a circle equivalent to the average outer circumference length (a circle having the same circumference as the average outer circumference length) ( S 2 ) was calculated.

[異形シリカ系粒子のコア内部細孔の平均細孔径、および被覆シリカ層の平均厚さ測定・算出]
異形シリカ系粒子のコア内部細孔の平均細孔径、および被覆シリカ層の平均厚さ測定・算出は、次のように行った。初めに、透過型電子顕微鏡(TEM)によって異形シリカ系粒子を20万倍で観察し、この粒子の最大径を長軸とし、その長軸上にて長軸を2等分する点を定め、それに直交する直線が粒子の外縁と交わる2点を求め、この2点間を短軸とした。そして、この長軸及び短軸の両側の被覆シリカ層の厚さを求め、これらを単純平均してこの粒子1つの被覆シリカ層の平均厚みとした。同様に任意の20個の粒子についてシリカ層の厚みを求め、これらを単純平均したものを異形シリカ系粒子における被覆シリカ層の平均厚さとした。
さらに、長軸および短軸上に存在する細孔径を求め、その平均を粒子1つの平均細孔径とした。同様に任意の20個の粒子について細孔径を求め、これらを単純平均したものを異形シリカ系粒子における平均細孔径とした。
[Measurement / calculation of average pore diameter of core internal pores of irregularly shaped silica particles and average thickness of coated silica layer]
The average pore diameter of the core internal pores of the irregularly shaped silica particles and the average thickness of the coated silica layer were measured and calculated as follows. First, a transmission electron microscope (TEM) was used to observe the deformed silica-based particles at a magnification of 200,000, and the maximum diameter of these particles was set as the major axis, and the point at which the major axis was divided into two equal parts was determined. Two points where a straight line orthogonal to it intersects the outer edge of the particle were obtained, and the distance between these two points was taken as the minor axis. Then, the thicknesses of the coated silica layers on both sides of the major axis and the minor axis were obtained, and these were simply averaged to obtain the average thickness of the coated silica layer of one particle. Similarly, the thickness of the silica layer was determined for any 20 particles, and the simple average of these was taken as the average thickness of the coated silica layer in the deformed silica-based particles.
Further, the pore diameters existing on the major axis and the minor axis were determined, and the average thereof was taken as the average pore diameter of one particle. Similarly, the pore diameters of any 20 particles were determined, and the simple average of these was used as the average pore diameter of the irregularly shaped silica particles.

[シリカ系ゲルのサイズ測定方法]
シリカ系ゲルのサイズ測定は、HORIBA社製LA−950を用いて、以下の測定条件により行った。
LA−950V2のバージョンは7.02、アルゴリズムオプションは標準演算、固体の屈折率1.450、溶媒(純水)の屈折率1.333、反復回数は15回、サンプル投入バスの循環速度は5、撹拌速度は2とし、あらかじめこれらを設定した測定シーケンスを使用して測定を行った。そして、測定サンプルをスポイトを使用して原液のまま装置のサンプル投入口に投入した。ここで、透過率(R)の数値が90%になるように投入した。そして、透過率(R)の数値が安定した後、超音波を5分間照射し粒子径の測定を行った。
[Silica gel size measurement method]
The size of the silica-based gel was measured using LA-950 manufactured by HORIBA under the following measurement conditions.
The version of LA-950V2 is 7.02, the algorithm option is standard calculation, the refractive index of solid is 1.450, the refractive index of solvent (pure water) is 1.333, the number of iterations is 15, and the circulation speed of the sample input bus is 5. The stirring speed was set to 2, and the measurement was performed using a measurement sequence in which these were set in advance. Then, the measurement sample was put into the sample inlet of the apparatus as the undiluted solution using a dropper. Here, it was input so that the value of the transmittance (R) was 90%. Then, after the value of the transmittance (R) became stable, ultrasonic waves were irradiated for 5 minutes to measure the particle size.

[異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群を含むシリカ系粒子分散液に含まれる、異形シリカ系粒子の割合の測定方法]
電子顕微鏡(日立製作所社製、型番「S−5500」)により、シリカ系粒子分散液を倍率25万倍(ないしは50万倍)で写真撮影して得られる写真投影図において、任意の100個の粒子について、それぞれのアスペクト比(最小外接四角の長径/短径比)を求めた。ここでアスペクトが1.1以上であった粒子が異形シリカ系粒子である。そして、アスペクト比が1.1以上の粒子の個数と、測定した粒子の個数(100個)から、前記異形シリカ系粒子の割合を求めた。
その結果を表1に示した。
[Method for measuring the proportion of deformed silica-based particles contained in a silica-based particle dispersion containing a group of silica-based particles composed of deformed silica-based particles and non-deformed silica-based particles]
Arbitrary 100 photographic projections obtained by photographing a silica-based particle dispersion at a magnification of 250,000 times (or 500,000 times) with an electron microscope (manufactured by Hitachi, Ltd., model number "S-5500"). For each particle, the aspect ratio (major axis / minor axis ratio of the minimum circumscribing square) was determined. Here, the particles having an aspect of 1.1 or more are irregular silica-based particles. Then, the ratio of the deformed silica-based particles was determined from the number of particles having an aspect ratio of 1.1 or more and the measured number of particles (100 particles).
The results are shown in Table 1.

[研磨試験]
被研磨基板
被研磨基板として、ハードディスク用ニッケルメッキしたアルミ基板(東洋鋼鈑社製ニッケルメッキサブストレート)を使用した。本基板はドーナツ形状の基板である(外径95mmφ、内径25mmφ、厚さ1.27mm)。
研磨試験
9質量%のシリカ系粒子分散液344gを作製し、これに31質量%過酸化水素水を5.65g加えた後に10質量%硝酸にてpHを1.5に調整して研磨スラリーを作製した。
上記被研磨基板を研磨装置(ナノファクター社製:NF300)にセットし、研磨パッド(FILWEL社製「ベラトリックスNO178」)を使用し、基板荷重0.05MPa、定盤回転数50rpm、ヘッド回転数50rpmで、研磨スラリーを40g/分の速度で供給しながら1μm研磨を行った。
研磨速度
研磨前後の研磨基板の重量差と研磨時間より研磨速度を算出した。
研磨速度の安定性
前記の条件で5回研磨を繰り返し行い、研磨速度の変動係数(CV値)を算出した。
基板の平滑性
研磨試験により得られた研磨基板を、超微細欠陥・可視化マクロ装置(VISION PSYTEC社製、製品名:Maicro―Max VMX−3100)を使用し、観察条件はMME−250Wの白色光を10%に調整し、LA−180Meは0%にて観察した。
この観察では、基板表面にスクラッチ等で欠陥が存在すると白色光が乱反射され、欠陥部分が白く観察される。一方、欠陥が無い部分は白色光が正反射され、全面が黒く観察される。このように観察を行い、基板表面に存在するスクラッチ(線状痕)等によって生じる欠陥の面積(基板が白く観察される面積)を次の基準に従って評価した。
欠陥面積 評 価
3%未満 「非常に少ない」
3%以上、20%未満 「少ない」
20%以上、40%未満 「多い」
40%以上 「非常に多い」
うねり
研磨したドーナツ状のアルミ基板の外縁と内縁を2等分する任意の箇所を測定し、その測定箇所と反対側の2等分する箇所を測定し、これらの値の平均値をうねりの測定値とした。測定条件は下記の通りである。
機器:ZygoNewView7200
レンズ:2.5倍
ズーム比:1.0
フィルター:50〜500μm
測定エリア:3.75mm×2.81mm
[Polishing test]
Substrate to be polished A nickel-plated aluminum substrate for hard disks (nickel-plated substrate manufactured by Toyo Kohan Co., Ltd.) was used as the substrate to be polished. This substrate is a donut-shaped substrate (outer diameter 95 mmφ, inner diameter 25 mmφ, thickness 1.27 mm).
Polishing test 344 g of a 9 mass% silica-based particle dispersion was prepared, 5.65 g of 31 mass% hydrogen peroxide solution was added thereto, and then the pH was adjusted to 1.5 with 10 mass% nitric acid to prepare a polishing slurry. Made.
The above-mentioned substrate to be polished is set in a polishing device (Nanofactor Co., Ltd .: NF300), and a polishing pad (FILWEL Co., Ltd. "Bellatrix NO178") is used to load a substrate of 0.05 MPa, a surface plate rotation speed of 50 rpm, and a head rotation speed. At 50 rpm, 1 μm polishing was performed while supplying the polishing slurry at a rate of 40 g / min.
Polishing speed The polishing speed was calculated from the weight difference of the polishing substrate before and after polishing and the polishing time.
Stability of polishing rate Polishing was repeated 5 times under the above conditions, and the coefficient of variation (CV value) of the polishing rate was calculated.
The polished substrate obtained by the smoothing polishing test of the substrate was subjected to an ultrafine defect / visualization macro device (manufactured by VISION PSYTEC, product name: Micro-Max VMX-3100), and the observation condition was white light of MME-250W. Was adjusted to 10%, and LA-180Me was observed at 0%.
In this observation, if a defect is present on the surface of the substrate due to scratches or the like, white light is diffusely reflected and the defective portion is observed as white. On the other hand, white light is specularly reflected in the portion without defects, and the entire surface is observed as black. The observation was carried out in this way, and the area of defects (the area where the substrate was observed to be white) caused by scratches (linear marks) existing on the surface of the substrate was evaluated according to the following criteria.
Defect area rating less than 3% "very few"
3% or more, less than 20% "less"
20% or more, less than 40% "many"
40% or more "very much"
Measure an arbitrary part that divides the outer edge and inner edge of a swell- polished donut-shaped aluminum substrate into two equal parts, measure the part that divides into two equal parts on the opposite side of the measurement part, and measure the average value of these values to measure the swell. It was set as a value. The measurement conditions are as follows.
Equipment: ZygoNewView7200
Lens: 2.5x Zoom ratio: 1.0
Filter: 50-500 μm
Measurement area: 3.75 mm x 2.81 mm

[実施例1]
<高異形シリカ系ゲル微粒子分散液(1)>
2Lのガラスビーカーにシリカ粉体(乾燥シリカゲル)(Oriental silicas corporation社製「TOKUSIL928」[SiO2濃度88.9質量%、平均粒子径14μm、比表面積130m2/g])28gと純水472gを加え、4.8質量%水酸化ナトリウム水溶液を添加してpH10.0に調整した。これに0.25mmφのガラスメジアを1135g加え、サンドミル粉砕機にかけて、重量平均粒子径が135nmになるまで解砕を行い、SiO2濃度4.0質量%の高異形シリカ系ゲル微粒子分散液(1)を得た
[Example 1]
<Highly deformed silica-based gel fine particle dispersion (1)>
28 g of silica powder (dried silica gel) ("TOKUSIL 928" manufactured by Oriental silicas corporation [SiO 2 concentration 88.9 mass%, average particle diameter 14 μm, specific surface area 130 m 2 / g]) and 472 g of pure water are placed in a 2 L glass beaker. In addition, a 4.8 mass% aqueous sodium hydroxide solution was added to adjust the pH to 10.0. 1135 g of 0.25 mmφ glass medium is added thereto, and the mixture is crushed by a sand mill crusher until the weight average particle size becomes 135 nm. Highly deformed silica-based gel fine particle dispersion having a SiO 2 concentration of 4.0% by mass (1). Got

異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の調製
得られた高異形シリカ系ゲル微粒子分散液(1)にイオン交換水を添加してSiO2濃度2.76質量%の溶液2716gを得た。次に、4.8質量%の水酸化ナトリウム水溶液とイオン交換水を加え、pHが10.7でSiO2濃度2.5質量%の溶液に調整した。ついで98℃に昇温して30分間98℃に保持した。次に温度を98℃に保持したまま4.6質量%の酸性珪酸液5573.1gを20時間かけて添加し、更に温度を98℃に保持したまま1時間攪拌を継続した。
この調合液を室温まで冷却後に、限外濾過膜(旭化成社製SIP−1013)でSiO2濃度12質量%まで濃縮した。更にロータリーエバポレーターで30質量%まで濃縮し、異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群を得た。得られたシリカ系粒子群の重量平均粒子径は111nmであった。
Preparation of Silica Particles Consisting of Deformed Silica Particles and Non-Atypical Silica Particles A solution of a SiO 2 concentration of 2.76% by mass by adding ion-exchanged water to the obtained highly deformed silica gel fine particle dispersion (1). 2716 g was obtained. Next, a 4.8% by mass aqueous sodium hydroxide solution and ion-exchanged water were added to prepare a solution having a pH of 10.7 and a SiO 2 concentration of 2.5% by mass. Then, the temperature was raised to 98 ° C. and kept at 98 ° C. for 30 minutes. Next, 5573.1 g of an acidic silicic acid solution of 4.6% by mass was added over 20 hours while maintaining the temperature at 98 ° C., and stirring was continued for 1 hour while further maintaining the temperature at 98 ° C.
After cooling this preparation to room temperature, it was concentrated to a SiO 2 concentration of 12% by mass with an ultrafiltration membrane (SIP-1013 manufactured by Asahi Kasei Corporation). Further, the particles were concentrated to 30% by mass with a rotary evaporator to obtain a silica-based particle group composed of deformed silica-based particles and non-deformed silica-based particles. The weight average particle diameter of the obtained silica-based particle group was 111 nm.

[実施例2]
<高異形シリカ系ゲル微粒子分散液(2)>
0.77質量%の塩化カリウム水溶液1194.7gに、攪拌をしながら珪酸ナトリウム(SiO2濃度24質量%)600gとSiO2濃度が4.5質量%の酸性珪酸液70.3gを添加した。ついで、98℃に加温し、昇温後は98℃で40分保持した。更に98℃を保ったまま酸性珪酸液4792.4gを添加し、添加終了後も98℃を保ったまま1時間保持した。室温まで放冷してシリカゲルを得た。このシリカゲルを110℃で一晩乾燥して得られたシリカ粉体(乾燥シリカゲル)は、平均粒子径60μm、比表面積が200m2/g、SiO2含有量(濃度)が90.5質量%であった。
2Lのガラスビーカーにこのシリカ粉体28gと純水472gを加え、4.8質量%水酸化ナトリウム水溶液を添加してpH10.0に調整した。これに1.0mmφのジルコニアメジアを2390g加え、サンドミル粉砕機にかけて、重量平均粒子径が142nmになるまで解砕を行い、SiO2濃度4.0質量%の高異形シリカ系ゲル微粒子分散液(2)を得た。
[Example 2]
<Highly deformed silica-based gel fine particle dispersion (2)>
To 1194.7 g of a 0.77 mass% potassium chloride aqueous solution, 600 g of sodium silicate (SiO 2 concentration 24 mass%) and 70.3 g of an acidic silicic acid solution having a SiO 2 concentration of 4.5 mass% were added with stirring. Then, the temperature was raised to 98 ° C., and after the temperature was raised, the temperature was maintained at 98 ° C. for 40 minutes. Further, 4792.4 g of an acidic silicic acid solution was added while maintaining 98 ° C., and the temperature was maintained at 98 ° C. for 1 hour even after the addition was completed. Silica gel was obtained by allowing to cool to room temperature. The silica gel powder (dried silica gel) obtained by drying this silica gel overnight at 110 ° C. has an average particle size of 60 μm, a specific surface area of 200 m 2 / g, and a SiO 2 content (concentration) of 90.5% by mass. there were.
28 g of this silica powder and 472 g of pure water were added to a 2 L glass beaker, and a 4.8 mass% aqueous sodium hydroxide solution was added to adjust the pH to 10.0. To this was added 2390g zirconia main Zia of 1.0 mm, subjected to a sand mill grinder performs crushed to a weight average particle diameter is 142 nm, SiO 2 concentration of 4.0 wt% of high profiled silica gel fine particle dispersion ( 2) was obtained.

異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の調製
得られた高異形シリカ系ゲル微粒子分散液(2)にイオン交換水を添加してSiO2濃度2.76質量%の溶液2400gを得た。次に、4.8質量%の水酸化ナトリウム水溶液とイオン交換水を加え、pHが10.7でSiO2濃度2.5質量%の溶液に調整した。ついで98℃に昇温して30分間98℃に保持した。次に温度を98℃に保持したまま4.6質量%の酸性珪酸液8208gを20時間かけて添加し、更に温度を98℃に保持したまま1時間攪拌を継続した。
この調合液を室温まで冷却後に、限外濾過膜(旭化成社製SIP−1013)でSiO2濃度12質量%まで濃縮した。更にロータリーエバポレーターで30質量%まで濃縮し、異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群を得た。得られたシリカ系粒子群の重量平均粒子径は230nmであった。
Preparation of Silica Particles Consisting of Deformed Silica Particles and Non-Atypical Silica Particles A solution of a SiO 2 concentration of 2.76% by mass by adding ion-exchanged water to the obtained highly deformed silica gel fine particle dispersion (2). 2400 g was obtained. Next, a 4.8% by mass aqueous sodium hydroxide solution and ion-exchanged water were added to prepare a solution having a pH of 10.7 and a SiO 2 concentration of 2.5% by mass. Then, the temperature was raised to 98 ° C. and kept at 98 ° C. for 30 minutes. Next, 8208 g of a 4.6% by mass acidic silicic acid solution was added over 20 hours while maintaining the temperature at 98 ° C., and stirring was continued for 1 hour while further maintaining the temperature at 98 ° C.
After cooling this preparation to room temperature, it was concentrated to a SiO 2 concentration of 12% by mass with an ultrafiltration membrane (SIP-1013 manufactured by Asahi Kasei Corporation). Further, the particles were concentrated to 30% by mass with a rotary evaporator to obtain a silica-based particle group composed of deformed silica-based particles and non-deformed silica-based particles. The weight average particle diameter of the obtained silica-based particle group was 230 nm.

[実施例3]
<高異形シリカ系ゲル微粒子分散液(3)>
珪酸ナトリウム462.5gを水で希釈し、SiO2換算で24質量%の珪酸ナトリウム水溶液を調整した後、pHが4.0となるように25質量%の硫酸を添加してシリカヒドロゲルを含む溶液を得た。このシリカヒドロゲル溶液を、恒温槽で21℃の温度に維持して、5.75時間静置して熟成を行った後、シリカヒドロゲルに含まれるSiO2としての珪素に対し、硫酸ナトリウムの含有量が0.05質量%となるまで純水で洗浄して精製シリカヒドロゲルを得た。さらにこの精製シリカヒドロゲルを110℃で一晩乾燥させることでSiO2含有量(濃度)90.5質量%、平均粒子径123μm、比表面積403m2/gのシリカ粉体(乾燥シリカゲル)を得た。
2Lのガラスビーカーにこのシリカ粉体(乾燥シリカゲル)28gと純水472gを加え、4.8質量%水酸化ナトリウム水溶液を添加してpH10.0に調整した。これに1.0mmφのジルコニアメジアを2390g加え、サンドミル粉砕機にかけて、重量平均粒子径が314nmになるまで解砕を行い(1段目粉砕)、SiO2濃度4.0質量%の高異形シリカ系ゲル微粒子分散液(3)を得た。
[Example 3]
<Highly deformed silica-based gel fine particle dispersion (3)>
A solution containing silica hydrogel by diluting 462.5 g of sodium silicate with water to prepare a 24% by mass sodium silicate aqueous solution in terms of SiO 2 and then adding 25% by mass of sulfuric acid so that the pH becomes 4.0. Got This silica hydrogel solution is maintained at a temperature of 21 ° C. in a constant temperature bath and allowed to stand for 5.75 hours for aging, and then the content of sodium sulfate with respect to silicon as SiO 2 contained in the silica hydrogel. Was washed with pure water until the content was 0.05% by mass to obtain a purified silica hydrogel. Further, this purified silica hydrogel was dried overnight at 110 ° C. to obtain silica powder (dried silica gel) having a SiO 2 content (concentration) of 90.5% by mass, an average particle size of 123 μm, and a specific surface area of 403 m 2 / g. ..
28 g of this silica powder (dried silica gel) and 472 g of pure water were added to a 2 L glass beaker, and a 4.8 mass% sodium hydroxide aqueous solution was added to adjust the pH to 10.0. 2390 g of 1.0 mmφ zirconia media is added thereto, and the mixture is crushed by a sand mill crusher until the weight average particle size becomes 314 nm (first stage crushing), and highly deformed silica having a SiO 2 concentration of 4.0% by mass. A system gel fine particle dispersion liquid (3) was obtained.

<高異形シリカ系ゲル微粒子分散液(4)>
次に、高異形シリカ系ゲル微粒子分散液(3)に0.25mmφのガラスメジアを1135g加えて、重量平均粒子径が208nmになるまで解砕を行い(2段目粉砕)、SiO2濃度3.5質量%の高異形シリカ系ゲル微粒子分散液(4)1900gを得た。
<Highly deformed silica-based gel fine particle dispersion (4)>
Next, 1135 g of 0.25 mmφ glass media was added to the highly deformed silica-based gel fine particle dispersion (3) and crushed until the weight average particle size became 208 nm (second stage crushing), and the SiO 2 concentration was 3. 1900 g of a highly deformed silica-based gel fine particle dispersion (4) of 5% by mass was obtained.

異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の調製
得られた高異形シリカ系ゲル微粒子分散液(4)について、実施例1と同様の工程により、異形シリカ系粒子および非異形粒子からなるシリカ系粒子群を調整した。得られたシリカ系粒子群の重量平均径は128nmであった。
Preparation of Silica-based Particle Group Consisting of Deformed Silica-based Particles and Non-Deformed Silica-based Particles The obtained high-deformed silica-based gel fine particle dispersion liquid (4) was subjected to the same steps as in Example 1 to obtain deformed silica-based particles and non-deformed silica particles. A silica-based particle group consisting of particles was prepared. The weight average diameter of the obtained silica-based particle group was 128 nm.

[実施例4]
<高異形シリカ系ゲル微粒子分散液(5)>
珪酸ナトリウム462.5gを水で希釈し、SiO2換算で24質量%の珪酸ナトリウム水溶液を調整した後、pHが4.5となるように25質量%の硫酸を添加してシリカヒドロゲルを含む溶液を得た。このシリカヒドロゲル溶液を、恒温槽で21℃の温度に維持して、5.75時間静置して熟成を行った後、シリカヒドロゲルに含まれるSiO2としての珪素に対し、硫酸ナトリウムの含有量が0.05質量%となるまで純水で洗浄して精製シリカヒドロゲルを得た。さらにこの精製シリカヒドロゲルを110℃で一晩乾燥させて、メノウすり鉢で解砕してシリカ粉体(乾燥シリカゲル)を得た。このシリカ粉体(乾燥シリカゲル)はSiO2含有量(濃度)90.7質量%、平均粒子径12μm、比表面積354m2/gであった。
2Lのガラスビーカーにこのシリカ粉体(乾燥シリカゲル)28gと純水472gを加え、4.8質量%水酸化ナトリウム水溶液を添加してpH10.0に調整した。これに0.25mmφのガラスメジアを1135g加え、サンドミル粉砕機にかけて、重量平均粒子径が176nmになるまで解砕を行い、SiO2濃度4.0質量%の高異形シリカ系ゲル微粒子分散液(5)を得た。
[Example 4]
<Highly deformed silica-based gel fine particle dispersion (5)>
A solution containing silica hydrogel by diluting 462.5 g of sodium silicate with water to prepare a 24% by mass sodium silicate aqueous solution in terms of SiO 2 and then adding 25% by mass of sulfuric acid so that the pH becomes 4.5. Got This silica hydrogel solution is maintained at a temperature of 21 ° C. in a constant temperature bath and allowed to stand for 5.75 hours for aging, and then the content of sodium sulfate with respect to silicon as SiO 2 contained in the silica hydrogel. Was washed with pure water until the content was 0.05% by mass to obtain a purified silica hydrogel. Further, this purified silica hydrogel was dried at 110 ° C. overnight and crushed in an agate mortar to obtain silica powder (dried silica gel). This silica powder (dried silica gel) had a SiO 2 content (concentration) of 90.7% by mass, an average particle size of 12 μm, and a specific surface area of 354 m 2 / g.
28 g of this silica powder (dried silica gel) and 472 g of pure water were added to a 2 L glass beaker, and a 4.8 mass% sodium hydroxide aqueous solution was added to adjust the pH to 10.0. 1135 g of 0.25 mmφ glass medium was added thereto, and the mixture was crushed by a sand mill crusher until the weight average particle size became 176 nm. Highly deformed silica-based gel fine particle dispersion liquid (5) having a SiO 2 concentration of 4.0% by mass. Got

異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の調製
得られた高異形シリカ系ゲル微粒子分散液(5)について、実施例1と同様の工程により、異形シリカ系粒子および非異形粒子からなるシリカ系粒子群を調整した。得られたシリカ系粒子群の重量平均径は200nmであった。
Preparation of Silica-based Particle Group Consisting of Deformed Silica-based Particles and Non-Deformed Silica-based Particles The obtained high-deformed silica-based gel fine particle dispersion liquid (5) was subjected to the same steps as in Example 1 to obtain deformed silica-based particles and non-deformed silica-based particles. A silica-based particle group consisting of particles was prepared. The weight average diameter of the obtained silica-based particle group was 200 nm.

[比較例1]
シリカ微粒子が分散している分散液である「カタロイドSI−80P」(日揮触媒化成社製:シリカ濃度40質量%)を比較例1とした。
[Comparative Example 1]
Comparative Example 1 was "Cataloid SI-80P" (manufactured by JGC Catalysts and Chemicals Co., Ltd .: silica concentration 40% by mass), which is a dispersion liquid in which silica fine particles are dispersed.

[比較例2]
シリカ微粒子が分散している分散液である「SS−160」(日揮触媒化成社製:シリカ濃度20質量%)を比較例2とした。
[Comparative Example 2]
Comparative Example 2 was "SS-160" (manufactured by JGC Catalysts and Chemicals Co., Ltd .: silica concentration 20% by mass), which is a dispersion liquid in which silica fine particles are dispersed.

[比較例3]
シリカ微粒子が分散している分散液である「SS−300」(日揮触媒化成社製:シリカ濃度20質量%)を比較例3とした。
[Comparative Example 3]
Comparative Example 3 was "SS-300" (manufactured by JGC Catalysts and Chemicals Co., Ltd .: silica concentration 20% by mass), which is a dispersion liquid in which silica fine particles are dispersed.

実施例及び比較例における全ての分析結果及び測定結果を表1及び表2に記す。
具体的には、重量平均粒子径(D1)、比表面積換算粒子径(D2)、尖度、歪度、異形度(D=D1/D3)、体積基準粒子径分布の波形分離による分離ピークの個数、体積基準粒子径分布の波形分離した結果得られた分離ピークのうち、最大粒子成分の体積割合、SEM画像解析により得られる個数基準粒子径分布における、小粒子径側成分のアスペクト比、体積基準粒子径分布の粒子径の変動係数、画像解析法による平均面積(S1)に対する画像解析による平均外周長と等価な円の面積(S2)の比(S=S2/S1)、体積基準粒子径分布において、全体積(Q1)に対する0.7μm以上の粒子の体積(Q2)の割合(Q=Q2/Q1)、及びアスペクト比の値が1.1以上の粒子の割合を表1に記す。
また、工程aで使用するシリカゲルの比表面積、解砕後の粒子の重量平均粒子径、及び湿式解砕時のpHを表2に、工程bにおけるシリカゲルからなる粒子と珪酸を反応させた後の比表面積、シリカゲルからなる粒子の成長後の重量平均粒子径、シリカゲルからなる粒子を含む溶液のSiO2濃度、シリカゲルからなる粒子を含む溶液の加温後の温度、シリカゲルからなる粒子を含む溶液のpH及び異形シリカゲルからなる粒子を含む溶液のSiO2モル濃度に対する、添加する珪酸液のSiO2モル濃度を表2に記す。
更に、研磨速度とうねりの測定結果を表2に記す。
Tables 1 and 2 show all the analysis results and measurement results in Examples and Comparative Examples.
Specifically, waveform separation of weight average particle size (D 1 ), specific surface area equivalent particle size (D 2 ), sharpness, strain, deformity (D = D 1 / D 3 ), and volume-based particle size distribution. Number of separation peaks by, volume ratio of maximum particle component among the separation peaks obtained as a result of waveform separation of volume reference particle size distribution, small particle size side component in the number reference particle size distribution obtained by SEM image analysis Aspect ratio, fluctuation coefficient of particle size of volume-based particle size distribution, ratio of circle area (S 2 ) equivalent to average outer circumference length by image analysis to average area (S 1 ) by image analysis method (S = S 2 / S 1 ), in the volume-based particle size distribution, the ratio of the volume (Q 2 ) of particles of 0.7 μm or more to the total volume (Q 1 ) (Q = Q 2 / Q 1 ), and the value of the aspect ratio are 1. The proportions of one or more particles are shown in Table 1.
Table 2 shows the specific surface area of the silica gel used in step a, the weight average particle size of the particles after crushing, and the pH at the time of wet crushing, after reacting the silica gel particles in step b with silicic acid. Specific surface area, weight average particle size after growth of particles made of silica gel, SiO 2 concentration of solution containing particles made of silica gel, temperature after heating of solution containing particles made of silica gel, solution containing particles made of silica gel Table 2 shows the SiO 2 mol concentration of the silicic acid solution to be added with respect to the pH and the SiO 2 mol concentration of the solution containing particles composed of irregular silica gel.
Further, Table 2 shows the measurement results of the polishing rate and the swell.

Figure 2021059490
Figure 2021059490

Figure 2021059490
Figure 2021059490

本発明のシリカ系粒子群は、好適な粒子径、粒子径分布、異形度および粒子強度を有しているため、これを含むシリカ系粒子分散液は、NiPメッキされた被研磨基板やシリカ系基板などの表面研磨に好ましく用いることができる。 Since the silica-based particle group of the present invention has suitable particle size, particle size distribution, deformability, and particle strength, the silica-based particle dispersion liquid containing the silica-based particle group can be a NiP-plated substrate to be polished or a silica-based particle. It can be preferably used for surface polishing of substrates and the like.

Claims (13)

異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群を含むシリカ系粒子分散液であって、
前記シリカ系粒子群は下記[1]〜[3]を満たすシリカ系粒子分散液。
[1] 重量平均粒子径(D1)が60〜400nmであり、比表面積換算粒子径(D2)が20〜300nmであること。
[2] 重量平均粒子径(D1)と投影面積相当粒子径(D3)との比で表される異形度D(D=D1/D3)が1.1〜5.0の範囲にあること。
[3] 体積基準粒子径分布を波形分離すると、分離ピークが3つ以上検出される多峰分布となること。
A silica-based particle dispersion containing a group of silica-based particles composed of irregularly shaped silica-based particles and non-modified silica-based particles.
The silica-based particle group is a silica-based particle dispersion liquid satisfying the following [1] to [3].
[1] The weight average particle size (D 1 ) is 60 to 400 nm, and the specific surface area equivalent particle size (D 2 ) is 20 to 300 nm.
[2] The degree of deformation D (D = D 1 / D 3 ) represented by the ratio of the weight average particle diameter (D 1 ) to the projected area equivalent particle diameter (D 3 ) is in the range of 1.1 to 5.0. To be in.
[3] When the volume-based particle size distribution is waveform-separated, it becomes a multi-peak distribution in which three or more separation peaks are detected.
前記シリカ系粒子群が、その体積基準粒子径分布において、歪度が−20〜20の範囲にあることを特徴とする請求項1に記載のシリカ系粒子分散液。 The silica-based particle dispersion liquid according to claim 1, wherein the silica-based particle group has a skewness in the range of -20 to 20 in its volume-based particle size distribution. 前記シリカ系粒子群の体積基準粒子径分布を波形分離した結果得られた分離ピークのうち、最大粒子成分の体積割合が75%以下であることを特徴とする請求項1または2の何れかに記載のシリカ系粒子分散液。 According to any one of claims 1 or 2, wherein the volume ratio of the maximum particle component is 75% or less among the separation peaks obtained as a result of waveform-separating the volume-based particle size distribution of the silica-based particle group. The silica-based particle dispersion liquid described. 前記シリカ系粒子群のSEM画像解析により得られる個数基準粒子径分布において、小粒子側成分のアスペクト比が1.05〜5.0の範囲にあることを特徴とする請求項1〜3の何れかに記載のシリカ系粒子分散液。 Any of claims 1 to 3 characterized in that the aspect ratio of the small particle side component is in the range of 1.05 to 5.0 in the number-based particle size distribution obtained by SEM image analysis of the silica-based particle group. Silica-based particle dispersion according to Crab. 前記シリカ系粒子群の体積基準粒子径分布の粒子径の変動係数が30%以上であることを特徴とする請求項1〜4の何れかに記載のシリカ系粒子分散液。 The silica-based particle dispersion liquid according to any one of claims 1 to 4, wherein the variation coefficient of the particle size of the volume-based particle size distribution of the silica-based particle group is 30% or more. 前記シリカ系粒子群における、画像解析法による平均面積(S1)に対する画像解析法による平均外周長と等価な円の面積(S2)の比であらわされる平滑度S(S=S2/S1)が1.1〜5.0の範囲にあることを特徴とする請求項1〜5の何れかに記載のシリカ系粒子分散液。 Smoothness S (S = S 2 / S ) expressed by the ratio of the area of a circle (S 2 ) equivalent to the average outer peripheral length by the image analysis method to the average area (S 1 ) by the image analysis method in the silica-based particle group. The silica-based particle dispersion liquid according to any one of claims 1 to 5, wherein 1) is in the range of 1.1 to 5.0. 前記シリカ系粒子群の体積基準粒子径分布において、全体積(Q1)に対する0.7μm以上の粒子の体積(Q2)の割合Q(Q=Q2/Q1)が5.0%以下であることを特徴とする請求項1〜6の何れかに記載のシリカ系粒子分散液。 In volume-based particle size distribution of the silica particles, the ratio Q (Q = Q 2 / Q 1) of the volume of 0.7μm or more particles to the total volume (Q 1) (Q 2) is 5.0% or less The silica-based particle dispersion liquid according to any one of claims 1 to 6, wherein the silica-based particle dispersion liquid is characterized by the above. 請求項1〜7の何れかに記載のシリカ系粒子分散液を含む研磨用砥粒分散液。 An abrasive grain dispersion liquid for polishing containing the silica-based particle dispersion liquid according to any one of claims 1 to 7. 異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群であって、
下記[1]〜[3]を満たすシリカ系粒子群。
[1] 重量平均粒子径(D1)が60〜400nmであり、比表面積換算粒子径(D2)が20〜300nmであること。
[2] 重量平均粒子径(D1)と投影面積相当粒子径(D3)との比で表される異形度D(D=D1/D3)が1.1〜5.0の範囲にあること。
[3] 体積基準粒子径分布を波形分離すると、分離ピークが3つ以上検出される多峰分布となること。
A group of silica-based particles composed of irregularly shaped silica-based particles and non-modified silica-based particles.
A group of silica-based particles satisfying the following [1] to [3].
[1] The weight average particle size (D 1 ) is 60 to 400 nm, and the specific surface area equivalent particle size (D 2 ) is 20 to 300 nm.
[2] The degree of deformation D (D = D 1 / D 3 ) represented by the ratio of the weight average particle diameter (D 1 ) to the projected area equivalent particle diameter (D 3 ) is in the range of 1.1 to 5.0. To be in.
[3] When the volume-based particle size distribution is waveform-separated, it becomes a multi-peak distribution in which three or more separation peaks are detected.
下記工程a〜cを含むことを特徴とする異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の製造方法。
(工程a)シリカ系ゲルをアルカリ性下で湿式解砕して、高異形シリカ系ゲルからなる粒子を含む溶液にする工程。
(工程b)前記高異形シリカ系ゲルからなる粒子を含む溶液にアルカリ性下で珪酸液を添加して加温し、前記高異形シリカ系ゲルからなる粒子の一次粒子間の細孔を前記珪酸液に含まれる珪酸との反応によって埋めながら高い異形度のまま粒子を成長させて異形シリカ系粒子にする工程。
(工程c)成長した前記異形シリカ系粒子を含むシリカ系粒子群を濃縮し、回収する工程。
A method for producing a group of silica-based particles composed of deformed silica-based particles and non-deformed silica-based particles, which comprises the following steps a to c.
(Step a) A step of wet-crushing a silica-based gel under alkaline conditions to obtain a solution containing particles composed of a highly deformed silica-based gel.
(Step b) A silicic acid solution is added to a solution containing particles made of the highly deformed silica gel under alkaline conditions to heat the solution, and the pores between the primary particles of the particles made of the highly deformed silica gel are formed in the silicic acid solution. A step of growing particles with a high degree of deformity while filling them by reaction with silicic acid contained in the above to make them into deformed silica-based particles.
(Step c) A step of concentrating and recovering a group of silica-based particles containing the grown irregular silica-based particles.
前記工程aにおいて、比表面積50〜600m2/gの前記シリカ系ゲルを重量平均粒子径60〜250nmの前記高異形シリカ系ゲルからなる粒子にし、
前記工程bにおいて、前記高異形シリカ系ゲルからなる粒子の一次粒子間の細孔を前記珪酸との反応によって埋めて前記高異形シリカ系ゲルからなる粒子の比表面積を136m2/g以下にすると共に、重量平均粒子径60〜400nmの前記異形シリカ系粒子に成長させることを特徴とする請求項10に記載の異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の製造方法。
In the step a, the silica-based gel having a specific surface area of 50 to 600 m 2 / g is made into particles composed of the highly deformed silica-based gel having a weight average particle diameter of 60 to 250 nm.
In the step b, the pores between the primary particles of the particles made of the highly deformed silica gel are filled by the reaction with the silicic acid to reduce the specific surface area of the particles made of the highly deformed silica gel to 136 m 2 / g or less. The method for producing a silica-based particle group consisting of deformed silica-based particles and non-deformed silica-based particles according to claim 10, wherein the silica-based particles are grown into the deformed silica-based particles having a weight average particle diameter of 60 to 400 nm.
前記工程aにおいて、前記シリカ系ゲルをpH8.0〜11.5のアルカリ性下で湿式解砕して、前記高異形シリカ系ゲルからなる粒子を含む溶液にし、
前記工程bにおいて、前記高異形シリカ系ゲルからなる粒子を含む溶液のSiO2濃度を1〜10質量%にし、60℃〜170℃に加温し、pH9〜12.5のアルカリ性下で、前記珪酸液を連続的または断続的に添加して、前記高異形シリカ系ゲルからなる粒子の一次粒子間の細孔を珪酸との反応によって埋めて該粒子の比表面積を減少させると共に、粒子を異形のまま成長させ、
前記工程cにおいて、成長した前記異形シリカ系粒子を含む溶液を濃縮して該異形シリカ系粒子を含むシリカ系粒子群を回収することを特徴とする請求項10または11に記載の異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の製造方法。
In the step a, the silica-based gel is wet-crushed under alkalinity of pH 8.0 to 11.5 to obtain a solution containing particles composed of the highly deformed silica-based gel.
In the step b, the SiO 2 concentration of the solution containing the particles of the highly deformed silica-based gel is adjusted to 1 to 10% by mass, heated to 60 ° C to 170 ° C, and under alkaline pH of 9 to 12.5. Silicic acid solution is continuously or intermittently added to fill the pores between the primary particles of the particles made of the highly deformed silica-based gel by reaction with silicic acid to reduce the specific surface area of the particles and to deform the particles. Grow as it is
The deformed silica-based particles according to claim 10 or 11, wherein in the step c, the solution containing the grown deformed silica-based particles is concentrated to recover the silica-based particles group containing the deformed silica-based particles. A method for producing a group of silica-based particles composed of non-amorphous silica-based particles.
前記工程bにおいて、前記珪酸液の添加量が、前記高異形シリカ系ゲルからなる粒子を含む溶液のSiO2モル濃度に対して該珪酸液のSiO2モル濃度が0.5〜20モル倍になる範囲であることを特徴とする請求項10〜12の何れかに記載の異形シリカ系粒子および非異形シリカ系粒子からなるシリカ系粒子群の製造方法。 In the step b, the addition amount of the silicic acid solution is in the SiO 2 molar concentration of 0.5 to 20 times by mole of該珪acid liquid to SiO 2 molar concentration of the solution containing the particles consisting of the high profiled silica gel The method for producing a silica-based particle group consisting of a deformed silica-based particle and a non-deformed silica-based particle according to any one of claims 10 to 12, wherein the range is as follows.
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CN113773236A (en) * 2021-09-10 2021-12-10 上海奥威日化有限公司 Precursor composition for preparing sodium alkyl sulfate dry product
CN114751421A (en) * 2022-05-16 2022-07-15 通化双龙化工股份有限公司 High-adsorbability white carbon black
CN116216725A (en) * 2023-02-14 2023-06-06 无锡萃纯生物材料科技有限公司 Treatment method for adjusting aperture, specific surface area and pore volume of silica microsphere

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113773236A (en) * 2021-09-10 2021-12-10 上海奥威日化有限公司 Precursor composition for preparing sodium alkyl sulfate dry product
CN113773236B (en) * 2021-09-10 2023-03-14 上海奥威日化有限公司 Precursor composition for preparing sodium alkyl sulfate dry product
CN114751421A (en) * 2022-05-16 2022-07-15 通化双龙化工股份有限公司 High-adsorbability white carbon black
CN114751421B (en) * 2022-05-16 2023-10-10 通化双龙化工股份有限公司 Preparation method of high-adsorptivity white carbon black
CN116216725A (en) * 2023-02-14 2023-06-06 无锡萃纯生物材料科技有限公司 Treatment method for adjusting aperture, specific surface area and pore volume of silica microsphere

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