JP2021038424A - Film deposition material recovery system, method of recovering film deposition material and film deposition apparatus - Google Patents

Abstract

To provide a film deposition material recovery system capable of effectively recovering a film deposition material attached on a part.SOLUTION: A film deposition material recovery system Rm for recovering a film deposition material Om attached on a surface of a part Sd present in a film deposition chamber by a film deposition treatment in the film deposition chamber for depositing a predetermined thin film for an object to be deposited includes a sealed vessel 1 capable of accommodating the part with the film deposition material attached and a gas introducing means 2 for introducing a predetermined gas into the sealed vessel. The gas introducing means introduces a gas in the supercritical state or a gas to a critical pressure or more to the sealed vessel with the part accommodated therein to melt the film deposition material on the surface of the part to be a supercritical liquid Sf. The film deposition material recovery system Rm further includes an adjustable means 4, P1 capable of changing at least either a temperature or a pressure of a liquid in a supercritical state of this molten film deposition material.SELECTED DRAWING: Figure 1

Description

The present invention relates to a film-forming material recovery device, a film-forming material recovery method, and a film-forming device. The present invention relates to a material capable of efficiently recovering a film-forming material adhering to the surface of a component existing in the above, or being used as it is for film-forming on a film to be formed.

For example, in the manufacturing process of an organic electroluminescence device, an organic film or an organic multilayer film as a light emitting layer is formed on one surface (deposition surface) of a sheet-like or plate-like substrate (film to be filmed) such as glass or resin. There is a step of patterning and forming. As one of the methods for patterning and forming such an organic film or an organic multilayer film, a vacuum vapor deposition method using a mask plate (so-called shadow mask) has been conventionally known (see, for example, Patent Document 1). This has a vacuum chamber, and inside it, a vapor deposition source that sublimates or vaporizes an organic material (deposition material) by heating, and a movement that moves the substrate relative to the vapor deposition source in one direction in the vacuum chamber. Means and means are provided.

A mask plate is provided between the vapor deposition source and the substrate to limit the adhesion range of the sublimated or vaporized organic material to one surface (deposition surface) of the substrate. As the mask plate, a foil-like mask plate having a plurality of through holes penetrating in the plate thickness direction is used according to the pattern to be formed on the substrate. Then, by adhering (depositing) the organic material sublimated or vaporized by the vapor deposition source on the film-forming surface of the substrate through the mask plate, an organic film or an organic multilayer film is formed in a predetermined pattern.

When the film is formed as described above, it is generally known that the utilization efficiency of the organic material (the rate at which the material scattered from the vapor deposition source adheres to the substrate surface) is very low (about 10%). Since many of these organic materials are relatively expensive, how to effectively use the organic materials has become an important issue in order to reduce the manufacturing cost. Here, since the organic material scattered from the vapor deposition source at the time of film formation also adheres to the surface of parts (other than the substrate) existing in the vacuum chamber such as the mask plate and the adhesive plate, the organic material adhered to these parts. If it can be efficiently recovered and reused, or can be used as it is for film formation on a substrate, the efficiency of using organic materials can be substantially improved.

International Publication No. 2018/025637

In view of the above points, the present invention provides a film-forming material recovery device and a film-forming material recovery method capable of efficiently recovering the film-forming material adhering to the component, and the film-forming material adhering to the component to the film-deposited object as it is. It is an object of the present invention to provide a film forming apparatus that can be used for film forming.

In order to solve the above problems, the present invention recovers the film-forming material adhering to the surface of the component existing inside the film by the film-forming process in the film-forming chamber where a predetermined thin film is formed on the film to be formed. The film material recovery device includes a closed container capable of accommodating parts to which a film-forming material is attached, and a gas introducing means for introducing a predetermined gas into the closed container. A gas in a supercritical state or a gas above the critical pressure is introduced to dissolve the film-forming material on the surface of the component in the supercritical fluid, and at least the temperature and pressure of the supercritical fluid in which the film-forming material is dissolved. It is characterized by further providing a variable means for making one variable.

Further, in order to solve the above problems, the present invention recovers the film-forming material adhering to the surface of the component existing inside the film-forming material by the film-forming process in the film-forming chamber where a predetermined thin film is formed on the film to be filmed. The method for recovering the film-forming material is as follows: a step of accommodating a part having the film-forming material adhered to the surface in a closed container, and introducing a gas in a supercritical state or a gas up to a pressure higher than the critical pressure in the closed container. , The step of dissolving the film-forming material on the surface of the component in the supercritical fluid and at least one of the temperature and pressure of the supercritical fluid in which the film-forming material is dissolved are changed to vaporize the supercritical fluid and deposit the film-forming material. It is characterized by including a process.

According to the above, the film-forming material adhering to the component surface is dissolved in the supercritical fluid, so that the film-forming material adhering to the component surface is removed. Next, for example, in a closed container, when at least one of the temperature and pressure of the supercritical fluid in which the film forming material is dissolved is adjusted to change the state of the supercritical fluid into a gas, the film is dissolved in the supercritical fluid. The material precipitates and separates. Then, if the gas in the closed container is discharged, the film-forming material remaining in the closed container can be recovered. Since the supercritical fluid can dissolve the film-forming material at a relatively low temperature (for example, about 40 ° C. to 50 ° C. in the case of a carbon dioxide supercritical fluid), the film-forming material having low thermal stability is recovered. Even in this case, deterioration of the film-forming material due to thermal decomposition can be suppressed.

Further, in order to solve the above problems, the film forming apparatus of the present invention for forming a predetermined thin film on the film to be filmed is a sealable first type that stores a supercritical fluid in which the film forming material is dissolved. A chamber, a second chamber in which a film to be filmed is installed, and a means for communicating the first chamber and the second chamber are provided, and the pressure difference between the first chamber and the second chamber causes the second chamber. A predetermined thin film is formed by supplying a supercritical fluid in which the film forming material is dissolved toward the film to be formed inside, and the first chamber is formed on the surface as the predetermined thin film is formed. It is characterized in that a component to which a membrane material is attached can be accommodated, and a gas introduction means for introducing a gas in a supercritical state or a gas up to a pressure equal to or higher than the critical pressure is provided in the first chamber. According to this, after the film-forming material adhering to the surface of the component is dissolved in the supercritical fluid, the film-forming material is directly transferred to the film-deposited object without being separated by precipitating the film-forming material from the supercritical fluid. It can be used for film formation.

Further, in the present invention, it is preferable that the communication means is provided with a sealable third chamber for accommodating a film-forming material equivalent to the film-forming material adhering to the surface of the component. According to this, the amount of the film-forming material adhering to the component surface (that is, the film-forming material removed from the component surface and dissolved in the supercritical fluid) is insufficient than the amount required for film formation on the object to be filmed. Even in this case, by supplementing the film-forming material, a film can be formed on the object to be filmed.

The schematic cross-sectional view explaining the structure of the film-forming material recovery apparatus of this embodiment. The schematic cross-sectional view explaining the structure of the film forming apparatus of this embodiment.

Hereinafter, with reference to FIG. 1, the parts existing inside the film forming chamber are the adhesive plate Sd for preventing the film forming material from adhering to the inner surface of the partition wall, and the film forming material is the organic material Om. On the other hand, the film forming material recovery apparatus of the present invention and the film forming material recovery apparatus of the present invention are taken as an example in the case of recovering the organic material Om adhering to the surface of the adhesive plate Sd existing inside the film forming chamber for forming a predetermined thin film. An embodiment of the film-forming material recovery method will be described. In the following, the direction from the stage toward the protective plate Sd will be upward, and the terms indicating the directions such as “up” and “down” will be described with reference to FIG.

With reference to FIG. 1, Rm is the film-forming material recovery device of the present embodiment, and the film-forming material recovery device Rm includes a pressure chamber 1 as a closed container. A stage St is provided in the lower space of the pressure chamber 1, and an opening / closing door (not shown) is opened, and the protective plate Sd to which the organic material Om is attached is installed with the surface to which the organic material Om is attached facing upward. You can do it.

The pressure chamber 1 is provided with a gas introducing means 2 for introducing carbon dioxide gas into the pressure chamber 1. The gas introducing means 2 has a gas pipe 22 connected to a gas introducing portion 21 in the pressure chamber 1, a mass flow controller 23 is interposed in the gas pipe 22, and the pressure in the pressure chamber 1 is a predetermined pressure ( Carbon dioxide gas can be introduced until the pressure reaches the critical pressure or higher, for example, 7 MPa). In this embodiment, carbon dioxide gas is introduced into the pressure chamber 1 by the gas introducing means 2 until the pressure in the pressure chamber 1 becomes equal to or higher than the critical pressure of carbon dioxide. The gas introduction means 2 can also be configured to introduce carbon dioxide (supercritical fluid Sf) in a critical state.

A heating means 3 is provided on the side wall of the pressure chamber 1 so that the carbon dioxide gas introduced into the pressure chamber 1 can be heated to a predetermined temperature (critical temperature or higher, for example, 40 ° C. or higher). As the heating means 3, known means such as a sheath heater and a lamp heater can be used.

As will be described later, the pressure chamber 1 is connected to a discharge pipe 11 for discharging the supercritical fluid Sf in which the organic material Om is dissolved. The other end of the discharge pipe 11 is connected to the separation chamber 4 via an on-off valve V1. An exhaust pipe P11 from the vacuum pump P1 is connected to the separation chamber 4 so that the inside thereof can be evacuated to a predetermined pressure lower than the atmospheric pressure. Further, in the separation chamber 4, as described later, a relief valve Rv that changes the state of the supercritical fluid Sf into a gas and releases carbon dioxide gas is provided, and a recovery container 41 having an open upper surface is provided inside the relief valve Rv. Has been done. In this case, the other end of the discharge pipe 11 is projected into the separation chamber 4, and the protruding tip portion 11a can inject the supercritical fluid Sf in which the organic material Om is dissolved toward the recovery container 41. .. In this embodiment, an example will be described in which a separation chamber 4 to which the vacuum pump P1 is connected is provided as the variable means, but a decompression device capable of reducing the pressure to the critical pressure or less and cooling capable of cooling the temperature to the critical temperature or lower The device can also be provided in the pressure chamber 1 itself to form variable means. In this case, the separation chamber 4 can be omitted. Hereinafter, a method for recovering the organic material Om using the film-forming material recovery device Rm will be specifically described.

On the stage St in the pressure chamber 1, the protective plate Sd to which the organic material Om is attached is installed in a posture in which the surface to which the organic material Om is attached faces upward, and the on-off valve V1 is closed to seal the pressure chamber 1. .. Then, the gas introducing means 2 introduces carbon dioxide gas until the pressure in the pressure chamber 1 becomes 7 Mpa or more, and the introduced carbon dioxide gas is heated by the heating means 3 until the temperature reaches 40 ° C. to 50 ° C. Then, carbon dioxide becomes a supercritical state in the pressure chamber 1, and the organic material Om on the surface of the adhesive plate Sd dissolves in the supercritical fluid Sf. At this time, the separation chamber 4 is evacuated by the vacuum pump P1 to a predetermined pressure lower than the atmospheric pressure.

Next, when the on-off valve V1 is opened, the supercritical fluid Sf in which the organic material Om is dissolved is transferred to the separation chamber 4 via the discharge pipe 11 due to the pressure difference between the pressure chamber 1 and the separation chamber 4, and is transferred to the discharge pipe 4. It is ejected from the tip end portion 11a of 11 toward the collection container. At this time, the pressure of the supercritical fluid Sf injected toward the recovery container 41 drops sharply, and the supercritical fluid Sf evaporates, while the organic material Om dissolved in the supercritical fluid Sf is removed from the recovery container 41. It precipitates inside, and the precipitated organic material Om is recovered. Then, after opening the relief valve Rv and releasing the vaporized carbon dioxide inside the relief valve Rv, the opening / closing door (not shown) provided in the separation chamber 4 is opened to take out the organic material Om.

In the above embodiment, the vacuum-exhausted separation chamber 4 and the pressure chamber 1 are communicated with each other, and the pressure of the supercritical fluid Sf is rapidly lowered (decompressed) to a pressure below the critical pressure to vaporize it. The pressure in the chamber 4 can be set to a pressure equivalent to that of atmospheric pressure, and the separation chamber 4 and the pressure chamber 1 can be communicated with each other to reduce the pressure of the supercritical fluid Sf to a pressure equal to or lower than the critical pressure for vaporization. Further, a cooling device may be provided in the pressure chamber 1 itself, and the temperature of the supercritical fluid Sf may be cooled to a temperature equal to or lower than the critical temperature in the pressure chamber 1 to be vaporized.

According to the above embodiment, the organic material Om on the surface of the adhesive plate Sd is dissolved in the supercritical fluid Sf, so that the organic material Om is removed from the adhesive plate Sd. Then, by reducing the pressure of the supercritical fluid Sf in which the organic material Om is dissolved to below the critical pressure (or cooling the temperature to below the supercritical temperature, or reducing the pressure and cooling), the supercritical fluid Sf is vaporized and super-supercritical. The organic material Om dissolved in the critical fluid Sf is precipitated and separated. Therefore, if the vaporized carbon dioxide is discharged, the organic material Om can be efficiently recovered. Here, since the critical temperature of carbon dioxide is about 40 ° C. to 50 ° C., deterioration of the material can be suppressed even when an organic material having low thermal stability (for example, an oligomer material or a polymer material) is recovered.

Next, with reference to FIG. 2, a film-forming material is formed on the surface of a glass substrate having a rectangular outline and a predetermined thickness (hereinafter referred to as “substrate Sw”) and a predetermined thin film. An embodiment of the film forming apparatus of the present invention is set as an example in which a part to which is attached is an adhesive plate Sd, a film forming material is an organic material Om, and a predetermined thin film made of an organic material Om is formed on one side of a substrate Sw. explain. In the following, the direction from the stage to the protective plate Sd is set upward, and the terms indicating the directions such as “up”, “bottom”, “right”, and “left” will be described with reference to FIG.

With reference to FIG. 2, Cm is the film forming apparatus of the present embodiment. The film forming apparatus Cm includes a first pressure chamber 1 which is a first chamber and a vacuum chamber 5 which is a second chamber, and the first pressure chamber 1 and the vacuum chamber 5 are connected by a supply pipe 6 as a communication means. There is. One tip of the supply pipe 6 penetrates the upper wall 5a of the vacuum chamber 5 and projects into the vacuum chamber 5, and the tip of the supply pipe 6 projecting into the vacuum chamber 5 is a supercritical fluid described later. An injection nozzle In that injects Sf at a predetermined injection angle is provided. Further, the supply pipe 6 is connected to the second pressure chamber 7 via the pipes 61 and 62 at the intermediate portion thereof, and is interposed through the three-way valve V2 and the pipe 62 provided at the connection portion between the supply pipe 6 and the pipe 61. By opening and closing the provided on-off valve V3, the first pressure chamber 1, the vacuum chamber 5, and the second pressure chamber 7 can be selectively communicated with each other.

A stage St is provided in the lower space of the first pressure chamber 1, and an opening / closing door (not shown) is opened, and the protective plate Sd to which the organic material Om is attached faces upward with the surface to which the organic material Om is attached facing upward. It can be installed at. The first pressure chamber 1 is provided with a first gas introducing means 2 for introducing carbon dioxide gas into the first pressure chamber 1. The first gas introducing means 2 has a gas pipe 22 connected to a gas introducing portion 21 in the first pressure chamber 1, and a mass flow controller 23 is interposed in the gas pipe 22 to be provided in the first pressure chamber 1. Carbon dioxide gas can be introduced until the pressure reaches a predetermined pressure (above the critical pressure, for example, 7 MPa). In the present embodiment, carbon dioxide gas is introduced by the first gas introducing means 2 until the pressure in the first pressure chamber 1 becomes equal to or higher than the critical pressure of carbon dioxide. The first gas introducing means 2 can also be configured to introduce carbon dioxide that has been in a supercritical state in advance into the chamber 1.

A heating means 3 is provided on the side wall of the first pressure chamber 1 so that the carbon dioxide gas introduced into the first pressure chamber 1 can be heated to a predetermined temperature (critical temperature or higher, for example, 40 ° C. or higher). There is. As the heating means 3, known means such as a sheath heater and a lamp heater can be used.

An exhaust pipe P21 from a vacuum pump P2 such as a rotary pump or a turbo molecular pump such as a rotary pump or a turbo molecular pump is connected to the vacuum chamber 5, and a conduction valve Cv as a pressure adjusting means is interposed in the exhaust pipe P21. ing. Further, the vacuum chamber 5 is provided with a second gas introducing means 8 as a pressure adjusting means for introducing a predetermined gas into the vacuum chamber 5, so that the vacuum chamber 5 can be appropriately controlled to a predetermined pressure (vacuum degree). ing. As the second gas introducing means 8, a gas pipe 82 connected to the gas introducing portion 81 in the vacuum chamber 5 and a mass flow controller 83 interposed in the gas pipe 82 can be used. On the other hand, as the gas to be introduced, an inert gas or the same carbon dioxide gas as in the first gas introducing means 2 can be used, and when carbon dioxide gas is used, it can be recovered and reused after the film formation. .. In the present embodiment, by providing the vacuum exhaust means, the pressure in the vacuum chamber 5 can be set to a predetermined pressure lower than the atmospheric pressure, and the pressure in the vacuum chamber 5 is equal to (or higher than the atmospheric pressure) the atmospheric pressure. It is possible to form a film at a faster film forming rate than in the case of pressure. Further, the film forming rate can be easily controlled by providing the pressure adjusting means and adjusting the pressure in the vacuum chamber 5. In this embodiment, a vacuum pump P2 as a vacuum exhaust means, a mass flow controller 83 as a pressure adjusting means, and a second gas introducing means 8 will be described as an example, but the vacuum exhaust means and the pressure adjusting means will be omitted. You can also do it.

A moving means 9 is provided in the lower space in the vacuum chamber 5, and the moving means 9 includes a holder 91 for holding the substrate Sw in a state where the upper surface as a film forming surface is open, and a driving means 92. The drive shaft 92a of the drive means 92 is connected to the holder 91 so that the holder 91 and thus the substrate Sw can move relative to the injection nozzle In in the left-right direction (X-axis direction). A known means of transportation 9 can be used. In the present embodiment, the moving means 9 moves the substrate Sw relative to the injection nozzle In, so that the organic material Om can be formed over the entire surface of the substrate Sw with good film thickness uniformity.

A plate-shaped mask plate Mp is provided between the substrate Sw held by the holder 9 and the injection nozzle In. In the present embodiment, the mask plate Mp is integrally attached to the substrate Sw and can be relatively moved together with the substrate Sw by the moving means 9. A plurality of openings Mo penetrating in the plate thickness direction are formed in the mask plate Mp, and the adhesion range of the organic material Om to the substrate Sw is limited at a position where these openings Mo do not exist, so that the substrate Sw has a predetermined pattern. The film is formed on. A known mask plate Mp can be used.

A crucible 71 for accommodating the organic material Om is provided in the lower part of the second pressure chamber 7. Further, a heating means 3 is provided on the side wall in the second pressure chamber 7, and carbon dioxide gas introduced into the second pressure chamber 7 from the first pressure chamber 1 through the supply pipe 6 and the pipe 61 (in addition, Alternatively, the supercritical fluid Sf) can be heated to a predetermined temperature (critical temperature or higher, for example, 40 ° C. or higher). As the heating means 3, known means such as a sheath heater and a lamp heater can be used. Hereinafter, a film forming method using the film forming apparatus Cm will be specifically described.

After setting the substrate Sw and the mask plate Mp in the holder 91, the three-way valve V2 and the on-off valve V3 are closed, and the vacuum pump P2 is operated to reduce the pressure in the vacuum chamber 5 to a predetermined pressure (for example, ^10-5 Pa). .. On the stage St in the first pressure chamber 1, the adhesive plate Sd to which the organic material Om is attached is installed in a posture in which the surface to which the organic material Om is attached faces upward, and in the pit 71 in the second pressure chamber 7. After accommodating the organic material Om, the three-way valve V2 is selectively opened so that the first pressure chamber 1 and the second pressure chamber 7 communicate with each other. Then, carbon dioxide gas is introduced by the first gas introducing means 2 until the pressure of the second pressure chamber 7 communicating with the first pressure chamber 1 and the first pressure chamber 1 becomes 7 Mpa or more, and the introduced carbon dioxide gas is heated by the heating means. Heat to a temperature of 40 ° C. to 50 ° C. according to 3. Then, carbon dioxide becomes a supercritical state (supercritical fluid Sf) in the first pressure chamber 1 and the second pressure chamber 7, and the organic material Om on the surface of the adhesive plate Sd and the organic material Om in the pit 71 are supercritical fluids. Dissolves in Sf. At this time, the vacuum chamber 5 is evacuated by the vacuum pump P2 to a predetermined pressure lower than the atmospheric pressure.

Next, when the on-off valve V3 is opened so that the second pressure chamber 7 and the vacuum chamber 5 communicate with each other, the supercritical fluid Sf in which the organic material Om is dissolved due to the pressure difference between the second pressure chamber 7 and the vacuum chamber 5 Is introduced into the vacuum chamber 5 via the pipe 62 and the supply pipe 6, and the supercritical fluid Sf in which the organic material Om is dissolved is supplied from the injection nozzle In toward the substrate Sw in the vacuum chamber 5. In this embodiment, the case where the first pressure chamber 1 and the second pressure chamber 7 are communicated with each other and carbon dioxide gas is introduced from the inside of the first pressure chamber 1 into the second pressure chamber 7 will be described as an example. , The first pressure chamber 1 and the second pressure chamber 7 are not communicated with each other, and carbon dioxide gas is introduced only into the first pressure chamber 1 to bring it into a supercritical state, and then the on-off valve V3 is opened to bring the first pressure chamber 1 into a supercritical state. 1 and the vacuum chamber 5 can also be communicated with each other. Further, the vacuum pump P2 does not exhaust the vacuum in the vacuum chamber 5, for example, the pressure in the vacuum chamber 5 is set to be equal to (or higher than) the atmospheric pressure, and the pressure in the first pressure chamber 1 (that is, that is, is equal to or higher than the atmospheric pressure). The supercritical fluid Sf can also be supplied into the vacuum chamber 5 by the pressure difference between the pressure above the supercritical pressure) and the pressure in the vacuum chamber 5 (for example, atmospheric pressure).

According to the above embodiment, the supercritical fluid Sf in which the organic material Om is dissolved by communicating the first pressure chamber 1 (or the second pressure chamber 7 communicating with the first pressure chamber 1) and the vacuum chamber 5 Is supplied (injected) from the injection nozzle In toward the substrate Sw. At this time, the pressure of the supercritical fluid Sf introduced into the vacuum chamber 5 drops sharply, and the supercritical fluid vaporizes, while the organic material Om dissolved in the supercritical fluid Sf precipitates (or crystallizes). ), And the precipitated organic material Om adheres to and deposits on the surface of the substrate Sw to form a film. According to this, the organic material Om dissolved in the supercritical fluid (that is, the organic material Om adhering to the adhesive plate Sd) is not precipitated and separated, and the organic material Om is directly formed on the substrate Sw. Can be used for. Here, since carbon dioxide has a critical temperature of about 40 ° C. to 50 ° C., deterioration of the material can be suppressed even when an organic material having low thermal stability (for example, an oligomer material or a polymer material) is formed.

Further, in the present embodiment, a second pressure chamber 7 is provided which is connected to the supply pipe 6 which is a communication means via pipes 61 and 62 and in which the organic material Om is housed, and is connected to the first pressure chamber 1. By communicating with the second pressure chamber 7, after the organic material Om in the pit 71 is dissolved in the supercritical fluid Sf supplied in the second pressure chamber 7, the organic material Om in the pit 71 is directed toward the substrate Sw in the vacuum chamber 5. The supercritical fluid Sf in which the organic material Om is dissolved is supplied. According to this, even if the amount of the organic material Om adhering to the adhesive plate Sd is less than the amount required for the film formation on the substrate Sw, the film can be formed on the substrate Sw by supplementing the organic material Om. it can.

Although the embodiments of the present invention have been described above, various modifications can be made without departing from the scope of the technical idea of the present invention. In the above embodiment, the part using the adhesive plate Sd as an example of the component existing inside the film forming chamber has been described as an example, but the present invention is not limited to this. Any component may be used as long as it is a component in which the organic material Om is adhered to the surface as a result of the formation of a predetermined thin film, and for example, a mask plate or the like in which the organic material Om is adhered to the surface by a vapor deposition treatment can be used. Further, in the above embodiment, a gas using carbon dioxide gas as a predetermined gas has been described as an example, but a gas such as ethane gas or ethylene gas can also be used.

Rm ... Film-forming material recovery device, Sd ... Adhesive plate (parts), Sw ... Substrate (film-deposited object), Om ... Organic material (deposition material), 1 ... Pressure chamber (sealed container), 1st pressure chamber (1st chamber), Sf ... Supercritical carbon dioxide (supercritical fluid), 2 ... Gas introduction means, P1 ... Vacuum pump (variable means), 4 ... Separation chamber (variable means), 5 ... Vacuum chamber (1st chamber) 2 chambers), 6 ... Supply pipe (communication means), 7 ... 2nd pressure chamber (3rd chamber).

Claims (4)

It is a film forming material recovery device that recovers the film forming material adhering to the surface of the component existing inside the film forming chamber for forming a predetermined thin film on the film to be filmed.
A closed container capable of accommodating parts to which a film-forming material is attached and a gas introduction means for introducing a predetermined gas into the closed container are provided.
The gas introducing means introduces a gas in a supercritical state or a gas up to a pressure equal to or higher than the critical pressure into a closed container containing the component, dissolves the film-forming material on the surface of the component in the supercritical fluid, and forms the film. A film-forming material recovery device further comprising variable means for changing at least one of the temperature and pressure of the supercritical fluid in which the material is melted. This is a film forming material recovery method for recovering the film forming material adhering to the surface of the component existing inside the film forming chamber for forming a predetermined thin film on the film to be filmed.
The process of accommodating parts with a film-forming material on the surface in a closed container,
A process of introducing a gas in a supercritical state or a gas up to a pressure higher than the critical pressure into a closed container to dissolve the film-forming material on the surface of the component in the supercritical fluid.
A method for recovering a film-forming material, which comprises a step of changing at least one of the temperature and pressure of the supercritical fluid in which the film-forming material is dissolved to vaporize the supercritical fluid and precipitating the film-forming material. A film forming apparatus for forming a predetermined thin film on a film to be formed.
A sealable first chamber for storing a supercritical fluid in which a film-forming material is dissolved, a second chamber in which a film-deposited object is installed, and a means for communicating the first chamber and the second chamber are provided. Then, due to the pressure difference between the first chamber and the second chamber, a predetermined thin film is formed by supplying a supercritical fluid in which the film forming material is dissolved toward the film to be formed in the second chamber. ,
The first chamber can accommodate a component having a film forming material adhered to the surface as a predetermined thin film is formed, and a gas in a supercritical state or a gas having a pressure equal to or higher than the critical pressure is introduced into the first chamber. A film forming apparatus characterized in that a gas introducing means is provided. The film forming apparatus according to claim 3, wherein the communicating means is provided with a sealable third chamber for accommodating a film forming material equivalent to the film forming material adhering to the surface of the component.

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