JP2021034642A - Optical semiconductor device and manufacturing method of optical semiconductor device - Google Patents

Abstract

To provide an optical semiconductor device capable of suppressing damage to an optical semiconductor element while securing a strength with respect to an external force, and a manufacturing method of the optical semiconductor device.SOLUTION: An optical semiconductor device 1 comprises: a wiring board 2 including a principal surface 2a; an optical semiconductor element 3 which is disposed on the principal surface 2a of the wiring board 2 and electrically connected with the wiring board 2; a light transmissive mold resin 4 which is disposed on the principal surface 2a of the wiring board 2 and seals the optical semiconductor element 3; and a resin sidewall 5 which is disposed along an outer edge of the wiring board 2 so as to cover a side face 4a of the mold resin 4. An opening area A is formed in which a partial area continued over an entire area in a direction D1 orthogonal to the principal surface 2a on the side face 4a of the mold resin 4 is formed on the side of the mold resin 4, and the sidewall 5 is not formed over the entire area in the direction D1 in the opening area A.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to an optical semiconductor device and a method for manufacturing the optical semiconductor device.

Conventionally, there is known an optical semiconductor device that is molded so that an optical semiconductor element (for example, a solid-state image sensor) is sealed with a transparent resin (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 5-114719

In the optical semiconductor device having the above-described structure, for example, when a relatively soft resin (for example, a silicone resin) is used as the transparent resin, the strength against an external force may be insufficient. Therefore, in order to secure the strength against an external force, it is conceivable to cover the periphery of the transparent resin that seals the optical semiconductor element with another resin frame. However, if the entire side surface of the transparent resin is surrounded by a resin frame, when the transparent resin expands or contracts due to an environmental change (for example, a temperature change), the stress due to the expansion or contraction can be appropriately relaxed. There is a risk that the optical semiconductor element will be damaged.

One aspect of the present disclosure is to provide an optical semiconductor device and a method for manufacturing the optical semiconductor device, which can suppress damage to the optical semiconductor element while ensuring strength against an external force.

The optical semiconductor device according to one aspect of the present disclosure includes a wiring board having a main surface, an optical semiconductor element arranged on the main surface of the wiring board and electrically connected to the wiring board, and the main surface of the wiring board. A light-transmitting mold resin for sealing an optical semiconductor element, and a resin side wall arranged along the outer edge of a wiring substrate so as to cover the side surface of the mold resin. On the side, there is an opening area that exposes a part of the side surface of the mold resin that is continuous over the entire area orthogonal to the main surface in the first direction, and is a side wall over the entire area in the first direction. An opening region is formed in which is not formed.

According to the above-mentioned optical semiconductor device, the mold resin and the optical semiconductor element sealed in the mold resin can be protected by the side wall arranged along the outer edge of the wiring board so as to cover the side surface of the mold resin. As a result, it is possible to secure the strength of the optical semiconductor device against an external force. Further, if the side wall is made of a material that is too hard, excessive stress may be applied to the mold resin (and thus the optical semiconductor element sealed in the mold resin) when the mold resin is expanded. On the other hand, in the above-mentioned optical semiconductor device, since the side wall is made of resin, the side wall can be appropriately expanded and contracted according to the expansion of the mold resin. As a result, excessive stress is prevented from being applied to the optical semiconductor element, and damage to the optical semiconductor element is suppressed. Further, on the side of the mold resin, a side wall is formed over the entire area in the first direction so as to expose a part of the side surface of the mold resin that is continuous over the entire area in the first direction to the outside. No opening area is formed. Through such an opening region, stress generated during expansion or contraction of the mold resin can be appropriately released. As a result, damage to the optical semiconductor element due to the stress can be suppressed.

The inner surface of the side wall facing the mold resin is an inclined surface inclined with respect to the first direction, and the inner edge of the first end portion of the side wall on the wiring board side when viewed from the first direction is the wiring on the side wall. It may be located outside the inner edge of the second end on the opposite side of the substrate. From the viewpoint of suppressing damage to the member that electrically connects the optical semiconductor element and the wiring board or the optical semiconductor element itself, it is particularly preferable to suppress expansion of the mold resin along the first direction. According to the above configuration, the inner surface of the side wall forming the inclined surface as described above effectively suppresses the expansion of the mold resin in the first direction, and the opening region in the direction orthogonal to the first direction is interposed. The expansion of the mold resin can be promoted.

The optical semiconductor device further includes a protective layer that covers the surface of the molded resin opposite to the wiring board, and the side surface of the protective layer may be covered with a side wall. According to the above configuration, the protective layer can appropriately protect the surface of the mold resin, while the side wall can appropriately hold the protective layer.

The optical semiconductor device may further include a protective layer that covers the surface of the molded resin opposite to the wiring board and the second end portion of the side wall opposite to the wiring board. According to the above configuration, the protective layer can appropriately protect the surface of the mold resin and the second end portion of the side wall.

The second end portion of the side wall opposite to the wiring board does not have a portion higher than the surface of the mold resin opposite to the wiring board with reference to the main surface, and the main surface of the second end portion of the side wall The height from the second end may be formed to decrease from the inner edge of the second end toward the outer edge of the second end. The surface of the mold resin (the surface opposite to the wiring substrate) forms a light incident surface when the optical semiconductor element is a light receiving element, and forms a light emitting surface when the optical semiconductor element is a light emitting element. To do. According to the above configuration, when the side wall is formed, it is possible to appropriately prevent a part (surplus) of the side wall from overflowing to the surface of the mold resin. As a result, it is possible to prevent the incident light on the optical semiconductor element (or the emitted light from the optical semiconductor element) from being absorbed by a part of the side wall overflowing on the surface of the mold resin.

The second end portion of the side wall opposite to the wiring board may have a portion higher than the surface of the mold resin opposite to the wiring board with respect to the main surface. According to the above configuration, the mold resin can be protected more effectively by the side wall having a portion higher than the mold resin.

The wiring board has a stepped portion having a first surface located inside the main surface and a second surface connecting the first surface and the main surface at the edge of the main surface, and wiring on the side wall. The portion including the first end portion on the substrate side may be in contact with the first surface and the second surface. According to the above configuration, when the mold resin shrinks, the second surface of the step portion functions as a stopper, so that the side wall can be prevented from moving inward together with the mold resin.

The first end portion of the side wall on the wiring board side does not reach the main surface, and the mold resin may enter between the first end portion and the main surface. According to the above configuration, an opening is formed between the first end portion and the main surface even in the region where the opening region is not formed (that is, the region where the side wall exists). Thereby, the stress generated at the time of expansion or contraction of the mold resin can be released more effectively.

The resin forming the side wall may have a hardness higher than that of the molded resin at least at 120 degrees Celsius or less. According to the above configuration, even when the optical semiconductor device is used in a high temperature environment, the strength against external force can be appropriately secured by the side wall.

The side wall may have a first side wall and a second side wall facing each other with the optical semiconductor element interposed therebetween when viewed from the first direction. According to the above configuration, the strength against the external force of the optical semiconductor device can be appropriately secured by the first side wall and the second side wall arranged in a well-balanced manner with the optical semiconductor element interposed therebetween, and the handleability of the optical semiconductor device can be improved. it can. For example, the optical semiconductor device can be gripped by tweezers or the like via the first side wall and the second side wall.

The first bonding pad is provided on the portion of the main surface on which the optical semiconductor element is not arranged, and the second bonding pad is provided on the surface of the optical semiconductor element opposite to the wiring board. The 1 bonding pad and the 2nd bonding pad may be electrically connected by wire bonding. According to the above configuration, the optical semiconductor element and the wiring board can be electrically connected by wire bonding. Further, the above-mentioned opening region suppresses the expansion of the mold resin along the first direction. As a result, damage to the wire due to expansion of the mold resin along the first direction (for example, disconnection of the portion connected to the first bonding pad or the second bonding pad, etc.) is suppressed.

The method for manufacturing an optical semiconductor device according to one aspect of the present disclosure is a wiring board layer including a portion to be a wiring board, in which an optical semiconductor element is arranged and wiring electrically connected to the optical semiconductor element. Molding from the mold resin layer side along the first step of forming the mold resin layer including the portion to be the mold resin with respect to the substrate layer and the planned cutting line corresponding to the position where the side wall is to be formed. The second step of forming a groove having a width larger than that of the side wall by cutting the resin layer, the third step of filling the groove with the resin for forming the side wall and curing the groove, and along the planned cutting line. The fourth step of forming the side wall by cutting the resin filled in the groove and cured and the wiring board layer is included.

According to the above-mentioned method for manufacturing an optical semiconductor device, an optical semiconductor device having the above-mentioned effects can be easily and appropriately manufactured.

In the second step, the groove portion may be formed so that the width of the groove portion becomes narrower from the surface of the mold resin layer opposite to the wiring board layer toward the wiring board layer side. According to the above configuration, it is possible to form a side wall having an inclined surface capable of effectively suppressing expansion of the mold resin in the first direction.

The method for manufacturing an optical semiconductor device further includes a step of forming a protective layer covering a surface of the molded resin layer opposite to the wiring board layer before the second step, and further includes a protective layer in the second step. You may cut it. According to the above configuration, it is possible to manufacture an optical semiconductor device in which the surface of the mold resin is appropriately protected by the protective layer and the protective layer is appropriately held by the side wall.

The method for manufacturing an optical semiconductor device further includes, before the fourth step, a step of forming a protective layer covering the surface of the molded resin layer opposite to the wiring board layer and the resin filled in the groove. The protective layer may be further cut in 4 steps. According to the above configuration, it is possible to manufacture an optical semiconductor device in which the surface of the mold resin and the second end portion of the side wall are appropriately protected by the protective layer.

In the third step, the groove is filled with the resin so that the top surface of the resin filled and cured in the groove has a concave shape recessed inward from the surface of the mold resin layer opposite to the surface opposite to the wiring board layer. The amount may be adjusted. According to the above configuration, in the third step, it is possible to appropriately prevent a part (surplus) of the resin from overflowing to the surface of the mold resin layer.

In the third step, the groove is filled with the resin so that the top surface of the resin filled and cured in the groove exhibits a convex shape protruding outward from the surface of the mold resin layer opposite to the surface opposite to the wiring board layer. The amount may be adjusted. According to the above configuration, it is possible to manufacture an optical semiconductor device in which the mold resin is appropriately protected by a side wall formed higher than the mold resin.

In the second step, a groove portion that reaches the inside of the main surface may be formed by cutting the mold resin layer and a part of the wiring board layer from the mold resin layer side. According to the above configuration, it is possible to obtain an optical semiconductor device in which the above-mentioned step portion is formed and the side wall is arranged in the step portion.

In the second step, the groove may be formed so that the groove does not reach the main surface. According to the above configuration, an optical semiconductor device is manufactured in which an opening is formed between the first end portion and the main surface, and the stress generated at the time of expansion or contraction of the mold resin can be released more effectively by the opening. be able to.

According to one aspect of the present disclosure, it is possible to provide an optical semiconductor device and a method for manufacturing the optical semiconductor device, which can suppress damage to the optical semiconductor element while ensuring strength against an external force.

FIG. 1 is a plan view of the optical semiconductor device of the first embodiment. FIG. 2 is a cross-sectional view of the optical semiconductor device along the line II-II in FIG. FIG. 3 is a diagram showing a manufacturing process of the optical semiconductor device of the first embodiment. FIG. 4 is a diagram showing a manufacturing process of the optical semiconductor device of the first embodiment. FIG. 5A is a cross-sectional view of the optical semiconductor device of the second embodiment, and FIG. 5B is a cross-sectional view of the optical semiconductor device of the third embodiment. FIG. 6A is a cross-sectional view of the optical semiconductor device of the fourth embodiment, and FIG. 6B is a diagram showing a part of a manufacturing process of the optical semiconductor device of the fourth embodiment. FIG. 7A is a cross-sectional view of the optical semiconductor device of the fifth embodiment, and FIG. 7B is a diagram showing a part of a manufacturing process of the optical semiconductor device of the fifth embodiment. FIG. 8A is a cross-sectional view of the optical semiconductor device of the sixth embodiment, and FIG. 8B is a cross-sectional view of the optical semiconductor device of the seventh embodiment. 9 (A) is a plan view of the optical semiconductor device of the eighth embodiment, and FIG. 9 (B) is a plan view of the optical semiconductor device of the ninth embodiment. 10 (A) is a plan view of the optical semiconductor device of the tenth embodiment, and FIG. 10 (B) is a plan view of the optical semiconductor device of the eleventh embodiment. 11 (A) is a plan view of the optical semiconductor device of the twelfth embodiment, and FIG. 11 (B) is a plan view of the optical semiconductor device of the thirteenth embodiment.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same reference numerals are used for the same or equivalent elements, and duplicate description is omitted.

[First Embodiment]
[Configuration of optical semiconductor device]
As shown in FIGS. 1 and 2, the optical semiconductor device 1 of the first embodiment includes a wiring board 2, an optical semiconductor element 3, a mold resin 4, and a side wall 5. The wiring board 2 has a main surface 2a. In the present embodiment, the wiring board 2 has a rectangular plate shape. That is, the main surface 2a has a rectangular shape. The substrate material of the wiring board 2 is, for example, silicon, ceramic, quartz, glass, resin, glass epoxy, or the like. The optical semiconductor element 3 is arranged on the main surface 2a of the wiring board 2. The optical semiconductor element 3 is mounted on the main surface 2a via, for example, a die bond resin (not shown). The optical semiconductor element 3 is, for example, a light receiving element or a light emitting element (or an element including both a light receiving element and a light emitting element).

An electrode pad 6 (first bonding pad) is provided on a portion of the main surface 2a of the wiring board 2 where the optical semiconductor element 3 is not arranged. In the present embodiment, two electrode pads 6 facing each other with the optical semiconductor element 3 interposed therebetween are provided when viewed from the direction D1 (first direction; see FIG. 2) orthogonal to the main surface 2a. The direction D1 is also the direction of light incident on the optical semiconductor element 3 when the optical semiconductor element 3 is a light receiving element, and the direction of light emission from the optical semiconductor element 3 when the optical semiconductor element 3 is a light emitting element. An electrode pad 7 (second bonding pad) is provided on the upper surface 3a (the surface opposite to the wiring board 2) of the optical semiconductor element 3. In this embodiment, as an example, two electrode pads 7 corresponding to the two electrode pads 6 are provided. However, the number of pairs of the electrode pads 6 and the electrode pads 7 may be one or three or more. The electrode pads 6 and the electrode pads 7 corresponding to each other are electrically connected by wire bonding. That is, the electrode pad 6 and the electrode pad 7 are electrically connected by a wire 8 formed by wire bonding.

The mold resin 4 is arranged on the main surface 2a of the wiring board 2 and seals each member (optical semiconductor element 3, electrode pads 6, 7, wire 8, etc.) arranged on the main surface 2a. The mold resin 4 is formed of a light-transmitting resin. The mold resin 4 is formed by, for example, a compression mold using a silicone resin. The outer shape of the mold resin 4 is a substantially rectangular parallelepiped shape.

The side wall 5 is a resin member arranged along the outer edge of the wiring board 2 so as to cover the side surface 4a of the mold resin 4. The side surface 4a of the mold resin 4 is a surface facing a direction orthogonal to the direction D1. The resin forming the side wall 5 has a hardness higher than that of the mold resin 4 at least in a state of 120 degrees Celsius or less. The resin forming the side wall 5 is, for example, an epoxy resin or the like. The first end portion 5a of the side wall 5 on the wiring board 2 side is arranged in the step portion 2b described later. The second end portion 5b on the side wall 5 opposite to the wiring board 2 is located on the same plane as the upper surface 4b (the surface opposite to the wiring board 2) of the mold resin 4.

On the side of the mold resin 4, an opening region A is formed that exposes a part of the side surface 4a of the mold resin 4 that is continuous over the entire area in the direction D1 to the outside. The opening region A is a region in which the side wall 5 is not formed over the entire area in the direction D1. That is, when viewed from the direction D1, the side wall 5 does not completely cover the side surface 4a of the mold resin 4. That is, a region (opening region A) in which the side wall 5 is not formed at all when viewed from the direction D1 is formed on the side of the mold resin 4.

As an example in the present embodiment, the side wall 5 has a first side wall 51 and a second side wall 52 that face each other with the optical semiconductor element 3 interposed therebetween when viewed from the direction D1. More specifically, the first side wall 51 and the second side wall 52 are provided along two side portions facing each other among the four side portions of the mold resin 4. The opening region A is formed by the regions corresponding to the two sides where the first side wall 51 and the second side wall 52 are not provided. In the following description, the direction in which the first side wall 51 and the second side wall 52 face each other is referred to as direction D2. Further, the direction orthogonal to each of the direction D1 and the direction D2 (that is, the direction in which the two opening regions A face each other) is defined as the direction D3.

As shown in FIG. 2, a step portion 2b is provided on the outer edge portion (that is, the edge portion of the main surface 2a) of the wiring board 2. The step portion 2b is formed in a portion of the outer edge portion of the wiring board 2 where the side wall 5 is arranged (that is, a portion that overlaps the side wall 5 when viewed from the direction D1). The step portion 2b has a first surface 2b1 and a second surface 2b2. The first surface 2b1 is a surface substantially parallel to the main surface 2a and is located inside (deep position) from the main surface 2a. The second surface 2b2 is a surface that intersects the main surface 2a and connects the first surface 2b1 and the main surface 2a. The side wall 5 is arranged on the step portion 2b. Specifically, the portion of the side wall 5 including the first end portion 5a is in contact with the first surface 2b1 and the second surface 2b2. That is, the side wall 5 is in a state of being fitted in the step portion 2b.

[Manufacturing method of optical semiconductor device]
Next, a method of manufacturing the optical semiconductor device 1 will be described with reference to FIGS. 3 and 4. First, as shown in FIG. 3A, the mold resin layer 40 is attached to the wiring board layer 20 in which the optical semiconductor element 3 is arranged and electrically connected to the optical semiconductor element 3 by wire bonding. Form (first step). The wiring board layer 20 is a member including a portion to be a wiring board 2 by a cutting process (see (B) in FIG. 4) using the blade B2 in the subsequent stage. The wiring board layer 20 has a larger size than the wiring board 2 in the direction D2. In the present embodiment, the dimensions of the wiring board layer 20 in the direction D3 (see FIG. 1) are the same as those of the wiring board 2. An electrode pad 6 is provided on the wiring board layer 20. Then, the electrode pad 6 and the electrode pad 7 of the optical semiconductor element 3 corresponding to the electrode pad 6 are electrically connected by a wire 8 formed by wire bonding. The mold resin layer 40 is a member including a portion to be formed into the mold resin 4 by a cutting process (see (B) in FIG. 3) using the blade B1 in the subsequent stage. The mold resin layer 40 is arranged on the main surface 20a (the surface including the portion to be the main surface 2a by the cutting process) of the wiring board layer 20 and seals the optical semiconductor element 3. The mold resin layer 40 has a larger size than the mold resin 4 in the direction D2. In the present embodiment, the dimensions of the mold resin layer 40 in the direction D3 (see FIG. 1) are the same as those of the mold resin 4. The mold resin layer 40 is formed by, for example, a compression mold using a silicone resin.

Subsequently, as shown in FIG. 3B, along the planned cutting line CL corresponding to the position where the side wall 5 (in the present embodiment, the first side wall 51 and the second side wall 52) is to be formed. , The mold resin layer 40 is cut from the mold resin layer 40 side. As a result, the groove portion 40a having a width larger than that of the side wall 5 is formed (second step). For example, the mold resin layer 40 is cut along the planned cutting line CL by the blade B1 having a width larger than that of the side wall 5. In the present embodiment, the mold resin layer 40 and a part of the wiring board layer 20 are cut from the mold resin layer 40 side by using the blade B1 to form a groove portion 40a that reaches the inside of the main surface 20a. Will be done. That is, a part including the main surface 20a of the wiring board layer 20 is removed together with the mold resin layer 40 along the planned cutting line CL.

Subsequently, as shown in FIG. 4A, the groove portion 40a is filled with the resin 50 for forming the side wall 5 and cured (third step). In the present embodiment, the groove portion 40a is filled with the resin 50 so that the upper surface of the resin 50 is located on the same plane as the upper surface 40b (the surface opposite to the wiring board layer 20) of the mold resin layer 40.

Subsequently, as shown in FIG. 4B, the side wall 5 (first side wall) is cut along the planned cutting line CL by cutting the resin 50 and the wiring board layer 20 that have been filled and cured in the groove 40a. 51 and the second side wall 52) are formed (fourth step). For example, the resin 50 and the wiring board layer 20 are cut by the blade B2 having a width smaller than that of the blade B1 along the planned cutting line CL. As a result, one side of the resin 50 divided into two becomes the side wall 5. As described above, in the present embodiment, the dimensions of the wiring board layer 20 and the mold resin layer 40 in the direction D3 (see FIG. 1) are the same as the dimensions of the wiring board 2 and the mold resin 4. In this case, the optical semiconductor device 1 is obtained after the completion of the fourth step. On the other hand, when the dimensions of the wiring board layer 20 and the mold resin layer 40 in the direction D3 are larger than the dimensions of the wiring board 2 and the mold resin 4, the optical semiconductor device 1 is obtained by further executing the following cutting process. Be done. That is, at a predetermined position in the direction D3 (that is, a position corresponding to the outer edge of the optical semiconductor device 1 in the direction D3), the process of cutting the wiring substrate layer 20, the mold resin layer 40, and the resin 50 along the direction D2 is further performed. By executing this, the optical semiconductor device 1 is obtained. For example, when the wiring substrate layer 20 is formed in a wafer shape in which a plurality of parts to be the optical semiconductor devices 1 are to be arranged in two dimensions, a cutting process (dicing) is performed along the directions D2 and D3. By doing so, a plurality of optical semiconductor devices 1 can be obtained.

[Action and effect of the first embodiment]
According to the optical semiconductor device 1, the optical semiconductor element 3 sealed in the mold resin 4 and the mold resin 4 by the side wall 5 arranged along the outer edge of the wiring board 2 so as to cover the side surface 4a of the mold resin 4. Can be protected. As a result, the strength of the optical semiconductor device 1 against an external force can be ensured. Further, if the side wall is made of a material that is too hard, excessive stress may be applied to the mold resin 4 (and thus the optical semiconductor element 3 sealed in the mold resin 4) when the mold resin 4 is expanded. There is. On the other hand, in the optical semiconductor device 1, since the side wall 5 is made of resin, the side wall 5 can be appropriately expanded and contracted according to the expansion of the mold resin 4. As a result, excessive stress is prevented from being applied to the optical semiconductor element 3, and damage to the optical semiconductor element 3 is suppressed. Further, on the side of the mold resin 4, a side wall 5 is formed over the entire area in the direction D1 so as to expose a part of the side surface 4a of the mold resin 4 that is continuous over the entire area in the direction D1 to the outside. An unopened opening region A is formed. Through such an opening region A, stress generated during expansion or contraction of the mold resin 4 can be appropriately released. That is, the opening region A functions as a region for relieving stress due to expansion or contraction of the mold resin 4. As a result, damage to the optical semiconductor element 3 due to the stress can be suppressed.

Further, the wiring board 2 has a step portion 2b provided on the edge portion of the main surface 2a, and the portion of the side wall 5 including the first end portion 5a is the first surface 2b1 and the second of the step portion 2b. It is in contact with surface 2b2. According to the above configuration, when the mold resin 4 shrinks due to a change in the temperature environment or the like, the second surface 2b2 of the step portion 2b functions as a stopper, so that the side wall 5 moves inward together with the mold resin 4. It is possible to prevent it from being stored.

Further, the resin forming the side wall 5 has a hardness higher than that of the mold resin 4 at least in a state of 120 degrees Celsius or less. According to the above configuration, even when the optical semiconductor device 1 is used in a high temperature environment, the side wall 5 can appropriately secure the strength against an external force. For example, when the optical semiconductor device 1 is mounted on a vehicle such as an automobile, the optical semiconductor device 1 is placed in a high temperature environment and an external force (impact or the like) is likely to be generated on the optical semiconductor device 1. Even in such an application, since the side wall 5 is formed of a resin that is harder to soften than the mold resin 4 in a high temperature environment, the optical semiconductor device 1 can be preferably used.

Further, the side wall 5 has a first side wall 51 and a second side wall 52 facing each other with the optical semiconductor element 3 interposed therebetween when viewed from the direction D1. According to the above configuration, the strength against the external force of the optical semiconductor device 1 can be appropriately secured by the first side wall 51 and the second side wall 52 arranged in a well-balanced manner with the optical semiconductor element 3 interposed therebetween, and the handling property of the optical semiconductor device 1 is assured. Can be improved. For example, it becomes easy to grip and carry the optical semiconductor device 1 with tweezers or the like via the first side wall 51 and the second side wall 52.

Further, an electrode pad 6 is provided on a portion of the main surface 2a of the wiring board 2 where the optical semiconductor element 3 is not arranged, and an electrode pad 7 is provided on the upper surface 3a of the optical semiconductor element 3. The electrode pad 6 and the electrode pad 7 are electrically connected by wire bonding. According to the above configuration, the optical semiconductor element 3 and the wiring board 2 can be electrically connected by wire bonding. Further, the above-mentioned opening region A suppresses the expansion of the mold resin 4 along the direction D1. Specifically, the expansion of the mold resin 4 in the direction D3 is formed by forming the opening region A that opens in the direction orthogonal to the direction D1 (direction D3 in the present embodiment) in the entire area along the direction D1. Is being promoted. By that amount, the expansion of the mold resin 4 along the direction D1 (that is, the direction in which the wire 8 is pulled out from the electrode pad 6 or the electrode pad 7) is suppressed. As a result, damage to the wire 8 due to expansion of the mold resin 4 along the direction D1 (for example, disconnection of the electrode pad 6 or the connection portion between the electrode pad 7 and the wire 8) is suppressed.

In particular, in the present embodiment, of the four side portions of the mold resin 4 when viewed from the direction D1, the two side portions (that is, the two side portions) in which the distance from each of the two electrode pads 6 and the connection portion of the wire 8 is short (that is,). An opening region A is formed along a side portion facing the optical semiconductor element 3 with the electrode pad 6 interposed therebetween). That is, the opening region A is formed in the portion of the side surface 4a of the mold resin 4 that is close to the connection portion. In other words, the side wall 5 is formed at a position as far as possible from the connection portion. By forming the opening region A as close as possible to the connecting portion in this way, expansion of the mold resin 4 in the direction D1 in the vicinity of the connecting portion can be more effectively suppressed. As a result, the damage of the wire 8 described above can be suppressed more effectively.

Further, the method for manufacturing the optical semiconductor device 1 described above includes a first step, a second step, a third step, and a fourth step. According to the processing of each of these steps, the optical semiconductor device 1 having the above-mentioned effects can be easily and appropriately manufactured.

Further, in the present embodiment, in the second step, by cutting the mold resin layer 40 and a part of the wiring board layer 20 from the mold resin layer 40 side, a groove portion 40a reaching the inside of the main surface 20a is formed. (See (B) in FIG. 3). As a result, it is possible to easily obtain a configuration in which the step portion 2b is formed and the side wall 5 is arranged in the step portion 2b (that is, the optical semiconductor device 1).

In the present embodiment, the opening region A is formed over the entire side portion along the direction D2 of the mold resin 4, but the opening region A must be formed over the entire side portion. There is no. From the viewpoint of allowing the opening region A to function suitably as a region for relaxing stress due to expansion or contraction of the mold resin 4, the width of the opening region A when viewed from the direction D1 (in the present embodiment, the width in the direction D2) is , It is preferable that the length of one side of the mold resin 4 (here, the length of the side along the direction D2) is ½ or more.

[Second Embodiment]
As shown in FIG. 5A, the optical semiconductor device 1A of the second embodiment is different from the optical semiconductor device 1 in that the side wall 5A is provided instead of the side wall 5. The side wall 5A differs from the side wall 5 in that it has a first side wall 51A and a second side wall 52A instead of the first side wall 51 and the second side wall 52. The inner side surface 5c of each of the first side wall 51A and the second side wall 52A facing the mold resin 4 has an inclined surface inclined with respect to the direction D1. In each of the first side wall 51A and the second side wall 52A, the inner side surface 5c is located so that the inner edge portion E1 of the first end portion 5a is located outside the inner edge portion E2 of the second end portion 5b when viewed from the direction D1. It is tilted to do. In this embodiment, the outer surface 5d of the side wall 5A is parallel to the direction D1. Then, the thickness of the side wall 5A in the direction D2 increases from the first end portion 5a to the second end portion 5b of the side wall 5A. That is, the distance between the inner surface 5c of the first side wall 51A and the inner surface 5c of the second side wall 52A becomes shorter as the distance from the main surface 2a is along the direction D1.

From the viewpoint of suppressing damage to the member (wire 8 in this embodiment) that electrically connects the optical semiconductor element 3 and the wiring substrate 2, or the optical semiconductor element 3 itself, expansion along the direction D1 of the mold resin 4 in particular. It is preferable to suppress. According to the optical semiconductor device 1A, the inner side surface 5c of the side wall 5A forming the inclined surface as described above effectively suppresses the expansion of the mold resin 4 in the direction D1 and molds in the direction D3 (see FIG. 1). Expansion of the resin 4 through the opening region A can be promoted. In particular, when the wire 8 connecting the electrode pad 6 and the electrode pad 7 is provided as in the present embodiment, the expansion of the mold resin 4 in the direction D1 causes damage (breakage, disconnection, etc.) of the wire 8 as described above. ) Is likely to occur. Further, since the direction D1 is the direction in which the optical semiconductor element 3 is separated from the wiring board 2, the expansion of the mold resin 4 in the direction D1 is not preferable. From the above viewpoint, the configuration of the optical semiconductor device 1A capable of effectively suppressing the expansion of the mold resin 4 in the direction D1 (that is, the side wall 5A having the inner side surface 5c forming the inclined surface) is very effective.

In order to manufacture the optical semiconductor device 1A, in the second step (see (B) of FIG. 3) of the manufacturing method of the optical semiconductor device 1 described above, the upper surface 40b of the mold resin layer 40 is directed toward the wiring substrate layer 20 side. The groove may be formed so that the width of the groove becomes narrower. For example, in the second step, by executing the cutting process using a blade having a cross-sectional trapezoidal shape (inverted trapezoidal shape) instead of the blade B1, the groove portion having a divergent shape from the bottom toward the opening when viewed from the direction D3. Can be formed. According to the manufacturing method modified as described above, the optical semiconductor device 1A provided with the side wall 5A described above can be manufactured.

[Third Embodiment]
As shown in FIG. 5B, the optical semiconductor device 1B of the third embodiment is different from the optical semiconductor device 1 in that the side wall 5B is provided instead of the side wall 5. The side wall 5B is different from the side wall 5 in that the first end portion 5a does not reach the main surface 2a of the wiring board 2. Further, in the optical semiconductor device 1B, the step portion 2b is not formed on the wiring board 2. The mold resin 4 is inserted between the first end portion 5a of the side wall 5B and the main surface 2a of the wiring board 2.

According to the optical semiconductor device 1B, even in a region where the opening region A is not formed (that is, a region where the side wall 5B exists), between the first end portion 5a of the side wall 5B and the main surface 2a of the wiring board 2. The opening B is formed. Thereby, the stress generated at the time of expansion or contraction of the mold resin 4 can be released more effectively.

In order to manufacture the optical semiconductor device 1B, in the second step (see (B) of FIG. 3) of the method for manufacturing the optical semiconductor device 1 described above, the groove portion is formed so that the groove portion does not reach the main surface 20a. Just do it. According to the manufacturing method modified as described above, the optical semiconductor device 1B provided with the side wall 5B described above can be manufactured.

[Fourth Embodiment]
As shown in FIG. 6A, the optical semiconductor device 1C of the fourth embodiment is different from the optical semiconductor device 1 in that it includes a protective layer 9 that covers the upper surface 4b of the mold resin 4. The side surface 9a of the protective layer 9 is covered with the side wall 5. Specifically, the side surface 9a of the protective layer 9 facing the direction D2 is covered with the side wall 5. Further, the upper surface of the protective layer 9 and the second end portion 5b of the side wall 5 are located on the same plane. That is, the upper surface 4b of the mold resin 4 is located closer to the wiring board 2 than the second end portion 5b of the side wall 5. The protective layer 9 is a member for preventing scratches, stains, etc. on the upper surface 4b of the mold resin 4. The protective layer 9 is, for example, resin, glass, or the like. Examples of the resin used as the material of the protective layer 9 include a hard coat resin having a higher resistance to surface scratches, stains, etc. than the mold resin 4.

According to the optical semiconductor device 1C, the protective layer 9 can appropriately protect the upper surface 4b of the mold resin 4, while the side wall 5 can appropriately hold the protective layer 9. In the present embodiment, since both ends of the protective layer 9 in the direction D2 are supported by the side wall 5, it is possible to prevent the protective layer 9 from skidding in the direction D2. Further, when the bottom surface of the protective layer 9A is in contact with two materials (mold resin 4 and side wall 5) as in the fifth embodiment described later, due to the difference in the coefficient of thermal expansion between the two materials, etc. Excessive stress may be applied to the protective layer 9A near the boundary between the two materials during thermal expansion. On the other hand, according to the protective layer 9 whose bottom surface is in contact with only one material (mold resin 4), it is possible to protect the upper surface 4b of the mold resin 4 while avoiding the generation of stress as described above. Therefore, according to the protective layer 9, it is possible to achieve both the avoidance of the generation of stress as described above and the protection of the mold resin 4 (and thus the protection of the optical semiconductor element 3 in the mold resin 4) in a well-balanced manner.

As shown in FIG. 6B, in the manufacturing method of the optical semiconductor device 1C, in addition to each step of the manufacturing method of the optical semiconductor device 1 described above, before the second step, the upper surface of the mold resin layer 40 is formed. It further comprises the step of forming a protective layer 90 covering 40b. The protective layer 90 is a member including a portion to be a protective layer 9 by a cutting process using the blade B1 (see (B) in FIG. 3). The protective layer 90 has a larger dimension than the protective layer 9 in the direction D2. Then, in the method for manufacturing the optical semiconductor device 1C, in the second step (see FIG. 3B), the protective layer 90 is further cut in addition to a part of the mold resin layer 40 and the wiring board layer 20. As a result, the optical semiconductor device 1C provided with the protective layer 9 described above can be manufactured. The step of forming the protective layer 90 may be executed at the same time as the step of forming the mold resin layer 40 (first step). For example, the mold resin layer 40 and the protective layer 90 may be formed at the same time by compression molding the resin forming the mold resin layer 40 and the protective layer 90 together.

[Fifth Embodiment]
As shown in FIG. 7A, the optical semiconductor device 1D of the fifth embodiment is light in that it includes a protective layer 9A that covers the upper surface 4b of the mold resin 4 and the second end portion 5b of the side wall 5. It is different from the semiconductor device 1. The protective layer 9A can be formed of the same material as the protective layer 9.

According to the optical semiconductor device 1D, the protective layer 9A can appropriately protect the upper surface 4b of the mold resin 4 and the second end portion 5b of the side wall 5. In particular, as compared with the protective layer 9 of the fourth embodiment, the boundary portion between the upper surface 4b of the mold resin 4 and the second end portion 5b of the side wall 5 can be accurately protected.

As shown in FIG. 7B, in the manufacturing method of the optical semiconductor device 1D, in addition to each step of the manufacturing method of the optical semiconductor device 1 described above, before the fourth step, the upper surface of the mold resin layer 40 is formed. It further includes a step of forming a protective layer 90A covering the 40b and the resin 50 filled in the groove 40a. The protective layer 90A is a member including a portion to be a protective layer 9A by a cutting process using the blade B2 (see (B) in FIG. 4). The protective layer 90A has a larger dimension than the protective layer 9A in the direction D2. Then, in the fourth step (see FIG. 4B), the protective layer 90A is further cut in addition to the resin 50 and the wiring board layer 20. Thereby, the optical semiconductor device 1D provided with the above-mentioned protective layer 9A can be manufactured.

[Sixth Embodiment]
As shown in FIG. 8A, the optical semiconductor device 1E of the sixth embodiment is different from the optical semiconductor device 1 in that the side wall 5E is provided instead of the side wall 5. The side wall 5E differs from the side wall 5 in the following points. That is, the second end portion 5b of the side wall 5E does not have a portion higher than the upper surface 4b of the mold resin 4 with reference to the main surface 2a. Further, the height of the second end portion 5b of the side wall 5E from the main surface 2a is formed so as to decrease from the inner edge portion E2 of the second end portion 5b toward the outer edge portion E3 of the second end portion 5b. ing. In the present embodiment, the height of the inner edge portion E2 of the second end portion 5b of the side wall 5E from the main surface 2a is the same as the height of the upper surface 4b of the mold resin 4 from the main surface 2a. Further, the second end portion 5b of the side wall 5E is formed in a curved surface shape that is curved so as to be convex inward. Since the second end portion 5b is formed in such a curved surface shape, the concentration of stress on the second end portion 5b is suppressed.

The upper surface 4b of the mold resin 4 forms a light incident surface when the optical semiconductor element 3 is a light receiving element, and forms a light emitting surface when the optical semiconductor element 3 is a light emitting element. According to the optical semiconductor device 1E, when the side wall 5E is formed, it is possible to appropriately prevent a part (surplus) of the side wall 5E from overflowing to the upper surface 4b of the mold resin 4. As a result, it is possible to prevent the incident light on the optical semiconductor element 3 (or the emitted light from the optical semiconductor element 3) from being absorbed by a part of the side wall 5E overflowing on the upper surface 4b of the mold resin 4. .. Further, such overflow of the resin is prevented, and a part of the side wall is not formed on the edge of the upper surface 4b of the mold resin 4, so that stress can be appropriately released when the mold resin 4 expands or contracts. That is, it is possible to prevent unnecessary stress from being applied to the mold resin 4 (and thus the optical semiconductor element 3 sealed in the mold resin 4) due to a part of the side wall overflowing from the edge of the upper surface 4b of the mold resin 4. ..

In order to manufacture the optical semiconductor device 1E, in the third step (see (A) of FIG. 4) of the method for manufacturing the optical semiconductor device 1 described above, the top surface of the resin 50 filled and cured in the groove 40a is formed. The filling amount of the resin 50 in the groove portion 40a may be adjusted so as to exhibit a concave shape recessed inward from the upper surface 40b of the mold resin layer 40. According to the manufacturing method modified as described above, it is possible to appropriately prevent a part (surplus) of the resin from overflowing to the upper surface 40b of the mold resin layer 40 in the third step. As a result, the above-mentioned optical semiconductor device 1E is obtained.

[7th Embodiment]
As shown in FIG. 8B, the optical semiconductor device 1F of the seventh embodiment is different from the optical semiconductor device 1 in that the side wall 5F is provided instead of the side wall 5. The side wall 5F differs from the side wall 5 in the following points. That is, the second end portion 5b of the side wall 5F has a portion higher than the upper surface 4b of the mold resin 4 with reference to the main surface 2a. In the present embodiment, the height of the second end portion 5b of the side wall 5F from the main surface 2a increases from the inner edge portion E2 of the second end portion 5b toward the outer edge portion E3 of the second end portion 5b. Is formed in. In the present embodiment, the second end portion 5b is higher than the upper surface 4b of the mold resin 4 in the entire area from the inner edge portion E2 to the outer edge portion E3 of the second end portion 5b. Further, the second end portion 5b of the side wall 5F is formed in a curved surface shape that is curved so as to be convex outward. Since the second end portion 5b is formed in such a curved surface shape, the concentration of stress on the second end portion 5b is suppressed.

According to the optical semiconductor device 1F, the mold resin 4 can be protected more effectively by the side wall 5F having a portion higher than the mold resin 4. In particular, the function of protecting the edge of the upper surface 4b of the mold resin 4 is improved.

In order to manufacture the optical semiconductor device 1F, in the third step (see (A) of FIG. 4) of the method for manufacturing the optical semiconductor device 1 described above, the top surface of the resin 50 filled and cured in the groove 40a is formed. The filling amount of the resin 50 in the groove portion 40a may be adjusted so as to exhibit a convex shape protruding outward from the upper surface 40b of the mold resin layer 40. According to the manufacturing method modified as described above, the above-mentioned optical semiconductor device 1F can be manufactured.

Next, various embodiments (8th to 13th embodiments) relating to the arrangement of the side walls as viewed from the direction D1 will be described. The form of the side wall arrangement shown in the eighth to thirteenth embodiments can be appropriately combined with the above-mentioned first to seventh embodiments.

[8th Embodiment]
As shown in FIG. 9A, the optical semiconductor device 1G of the eighth embodiment is different from the optical semiconductor device 1 in that the side wall 5G is provided instead of the side wall 5. The side wall 5G is formed so as to be continuous with the three side portions of the mold resin 4. That is, the side wall 5G is formed in a U-shape when viewed from the direction D1. In the optical semiconductor device 1G, an opening region A is formed in the remaining one side portion of the mold resin 4. In the optical semiconductor device 1G, the three peripheral sides of the mold resin 4 are surrounded by the side wall 5G. With such a configuration, the strength against an external force is effectively increased.

[9th Embodiment]
As shown in FIG. 9B, the optical semiconductor device 1H of the ninth embodiment is different from the optical semiconductor device 1 in that the side wall 5H is provided instead of the side wall 5. The side wall 5H is formed so as to be connected to two side portions adjacent to each other in the mold resin 4. That is, the side wall 5H is formed in an L shape when viewed from the direction D1. In the optical semiconductor device 1H, an L-shaped opening region A is formed in the remaining two sides of the mold resin 4.

[10th Embodiment]
As shown in FIG. 10A, the optical semiconductor device 1I of the tenth embodiment is different from the optical semiconductor device 1 in that the side wall 5I is provided instead of the side wall 5. The side wall 5I is composed of an L-shaped first side wall 51I and a second side wall 52I formed at each of the corners facing each other in the mold resin 4. In the optical semiconductor device 1I, an L-shaped opening region A is formed at each of the remaining two corners of the mold resin 4. In the optical semiconductor device 1I, at least a part of each side (four sides) of the mold resin 4 is surrounded by the side wall 5I. That is, there is no side that has no side surface portion covered by the side wall 5I. With such a configuration, the strength against an external force is effectively increased.

[11th Embodiment]
As shown in FIG. 10B, the optical semiconductor device 1J of the eleventh embodiment is different from the optical semiconductor device 1 in that the side wall 5J is provided instead of the side wall 5. Like the side wall 5, the side wall 5J includes a first side wall 51J and a second side wall 52J facing the direction D2. The first side wall 51J has a structure in which a portion EX extending along the side portion of the mold resin 4 (in the present embodiment, in the direction D2) is added at both ends of the first side wall 51, and the direction D1 It is formed in a U-shape when viewed from the above. The second side wall 52J has a structure in which a portion EX extending along the side portion of the mold resin 4 (in the present embodiment, in the direction D2) is added at both ends of the second side wall 52, and the direction D1 It is formed in a U-shape when viewed from the above. In the optical semiconductor device 1J, at least a part of each side (4 sides) of the mold resin 4 is surrounded by the side wall 5J, similarly to the optical semiconductor device 1I. With such a configuration, the strength against an external force is effectively increased.

[12th Embodiment]
As shown in FIG. 11A, the optical semiconductor device 1K of the twelfth embodiment is different from the optical semiconductor device 1 in that the side wall 5K is provided instead of the side wall 5. The side wall 5K is located at both ends of the U-shaped (U-shaped) side wall similar to the side wall 5G (see FIG. 9) of the optical semiconductor device 1G, along the side portion of the mold resin 4 (direction D2 in this embodiment). It has a structure in which an extending partial EX is added. In the optical semiconductor device 1K, most of the region around the mold resin 4 (that is, the region excluding the opening region A formed on a part of one side of the mold resin 4) is surrounded by the side wall 5K. With such a configuration, the strength against an external force is further effectively enhanced.

[13th Embodiment]
As shown in FIG. 11B, the optical semiconductor device 1L of the thirteenth embodiment is different from the optical semiconductor device 1 in that the side wall 5L is provided instead of the side wall 5. The optical semiconductor device 1L has the opposite relationship to the optical semiconductor device 1 in terms of the relationship between the side portion where the side wall is provided and the side portion where the opening region A is formed. That is, in the optical semiconductor device 1L, the opening region A is formed on the two side portions where the side wall 5 is formed in the optical semiconductor device 1, and the two sides on which the opening region A is formed in the optical semiconductor device 1. A side wall 5L is formed in the portion. According to the side wall 5L provided along the two side portions that are close to each other from the wire 8, the wire 8 can be suitably protected from an external force that presses the side surface of the mold resin 4 from the outside. Therefore, the stress directly generated on the wire 8 by the external force can be effectively reduced.

Although the preferred embodiments of the present disclosure have been described in detail above, the present disclosure is not limited to the above embodiments. For example, in the above embodiment, the optical semiconductor element 3 is arranged at a substantially central portion of the main surface 2a of the wiring board 2, but the optical semiconductor element 3 may be arranged at a position other than the above. Further, the positions and numbers of the electrode pads 6 and 7 are not limited to the above-described embodiment. Further, the wiring board 2 and the optical semiconductor element 3 may be electrically connected by a method other than wire bonding (for example, bump connection, solder connection, etc.).

Further, in the above embodiment, the first end portion 5a of the side wall is located inside the main surface 2a of the wiring board 2 (a form other than the third embodiment) and the first end portion 5a reaches the main surface 2a. Although it has been described that there is no form (third embodiment), the first end portion 5a may be located on the same plane as the main surface 2a.

In addition, the configurations of the respective parts shown in each of the above-described first to thirteenth embodiments may be combined as appropriate. For example, the protective layer 9 or the protective layer 9A (see FIGS. 6 and 7) in the fourth or fifth embodiment may also be provided in the optical semiconductor device according to another embodiment. Further, the shape of the second end portion 5b of the side wall 5E or the side wall 5F in the sixth embodiment or the seventh embodiment (see FIG. 8) may be adopted in the optical semiconductor device according to another embodiment.

1,1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 1I, 1J, 1K, 1L ... Optical semiconductor device, 2 ... Wiring board, 2a, 20a ... Main surface, 3 ... Optical semiconductor element, 4 ... Mold resin, 4a ... side surface, 5,5A, 5B, 5E, 5F, 5G, 5H, 5I, 5J, 5K, 5L ... side wall, 5a ... first end, 5b ... second end, 5c ... inner surface, 6 ... Electrode pad (first bonding pad), 7 ... Electrode pad (second bonding pad), 9,9A, 90, 90A ... Protective layer, 20 ... Wiring board layer, 40 ... Mold resin layer, 40a ... Groove, 50 ... Resin, 51, 51I, 51J ... 1st side wall, 52, 52I, 52J ... 2nd side wall, A ... Opening area, CL ... Scheduled cutting line, E2 ... Inner edge, E3 ... Outer edge.

Claims (19)

A wiring board with a main surface and
An optical semiconductor element arranged on the main surface of the wiring board and electrically connected to the wiring board.
A light-transmitting mold resin arranged on the main surface of the wiring board and sealing the optical semiconductor element, and
A resin side wall arranged along the outer edge of the wiring board is provided so as to cover the side surface of the mold resin.
On the side of the mold resin, there is an opening region that exposes a part of the side surface of the mold resin that is continuous over the entire area in the first direction orthogonal to the main surface to the outside. An optical semiconductor device in which the opening region in which the side wall is not formed is formed over the entire area in the direction. The inner surface of the side wall facing the mold resin is an inclined surface inclined with respect to the first direction.
When viewed from the first direction, the inner edge portion of the first end portion of the side wall on the wiring board side is located outside the inner edge portion of the second end portion of the side wall opposite to the wiring board. The optical semiconductor device according to claim 1. A protective layer covering the surface of the mold resin opposite to the wiring board is further provided.
The optical semiconductor device according to claim 1 or 2, wherein the side surface of the protective layer is covered with the side wall. The optical semiconductor device according to claim 1 or 2, further comprising a protective layer covering the surface of the mold resin opposite to the wiring board and the second end portion of the side wall opposite to the wiring board. The second end portion of the side wall opposite to the wiring board does not have a portion higher than the surface of the mold resin opposite to the wiring board with reference to the main surface.
The height of the second end portion of the side wall from the main surface is formed so as to decrease from the inner edge portion of the second end portion toward the outer edge portion of the second end portion. The optical semiconductor device according to any one of 1 to 3. The second end portion of the side wall opposite to the wiring board has a portion higher than the surface of the mold resin opposite to the wiring board with respect to the main surface, according to claims 1 to 3. The optical semiconductor device according to any one of the above. The wiring board has a stepped portion having a first surface located inside the main surface and a second surface connecting the first surface and the main surface at an edge portion of the main surface. And
The optical semiconductor device according to any one of claims 1 to 6, wherein a portion of the side wall including the first end portion on the wiring board side is in contact with the first surface and the second surface. The first end portion of the side wall on the wiring board side does not reach the main surface.
The optical semiconductor device according to any one of claims 1 to 6, wherein the mold resin is inserted between the first end portion and the main surface. The optical semiconductor device according to any one of claims 1 to 8, wherein the resin forming the side wall has a hardness higher than that of the molded resin at least in a state of 120 degrees Celsius or less. The optical semiconductor device according to any one of claims 1 to 9, wherein the side wall has a first side wall and a second side wall facing each other with the optical semiconductor element interposed therebetween when viewed from the first direction. A first bonding pad is provided on a portion of the main surface where the optical semiconductor element is not arranged.
A second bonding pad is provided on the surface of the optical semiconductor element opposite to the wiring board.
The optical semiconductor device according to any one of claims 1 to 10, wherein the first bonding pad and the second bonding pad are electrically connected by wire bonding. The method for manufacturing an optical semiconductor device according to claim 1.
It is a wiring board layer including a portion to be a wiring board, and becomes the mold resin with respect to the wiring board layer in which the optical semiconductor element is arranged and electrically connected to the optical semiconductor element. The first step of forming the mold resin layer including the planned portion,
A second step of forming a groove having a width larger than that of the side wall by cutting the mold resin layer from the mold resin layer side along a cutting line corresponding to a position where the side wall is to be formed. When,
A third step of filling the groove with a resin for forming the side wall and curing the groove.
A method for manufacturing an optical semiconductor device, comprising a fourth step of forming the side wall by cutting the resin filled and cured in the groove along the planned cutting line and the wiring board layer. According to claim 12, in the second step, the groove portion is formed so that the width of the groove portion becomes narrower toward the wiring board layer side from the surface of the mold resin layer opposite to the wiring board layer. The method for manufacturing an optical semiconductor device according to the description. Prior to the second step, a step of forming a protective layer covering the surface of the mold resin layer opposite to the wiring board layer is further included.
The method for manufacturing an optical semiconductor device according to claim 12 or 13, wherein in the second step, the protective layer is further cut. Prior to the fourth step, a step of forming a protective layer covering the surface of the mold resin layer opposite to the wiring board layer and the resin filled in the groove is further included.
The method for manufacturing an optical semiconductor device according to claim 12 or 13, wherein in the fourth step, the protective layer is further cut. In the third step, the top surface of the resin filled and cured in the groove portion has a concave shape recessed inward from the surface of the mold resin layer opposite to the surface of the wiring board layer. The method for manufacturing an optical semiconductor device according to any one of claims 12 to 14, wherein the filling amount of the resin in the groove portion is adjusted. In the third step, the top surface of the resin filled and cured in the groove portion exhibits a convex shape protruding outward from the surface of the mold resin layer opposite to the surface of the wiring board layer. The method for manufacturing an optical semiconductor device according to any one of claims 12 to 14, wherein the filling amount of the resin in the groove portion is adjusted. Claims 12 to 12, wherein in the second step, the mold resin layer and a part of the wiring board layer are cut from the mold resin layer side to form the groove portion that reaches the inside of the main surface. 17. The method for manufacturing an optical semiconductor device according to any one of 17. The method for manufacturing an optical semiconductor device according to any one of claims 12 to 17, wherein in the second step, the groove is formed so that the groove does not reach the main surface.

Images