JP2021027510A - Surface mounting type piezoelectric vibration device - Google Patents

Surface mounting type piezoelectric vibration device Download PDF

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JP2021027510A
JP2021027510A JP2019145402A JP2019145402A JP2021027510A JP 2021027510 A JP2021027510 A JP 2021027510A JP 2019145402 A JP2019145402 A JP 2019145402A JP 2019145402 A JP2019145402 A JP 2019145402A JP 2021027510 A JP2021027510 A JP 2021027510A
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peripheral edge
plan
frame portion
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main surface
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宏征 石原
Hiromasa Ishihara
宏征 石原
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Daishinku Corp
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Abstract

To provide a surface mounting type piezoelectric device having reliability which hardly causes characteristic deterioration.SOLUTION: A surface mounting type piezoelectric device includes: a base composed of a substantially rectangular substrate part 20 in a planar view with one principal surface at a lower side and the other principal surface at an upper side, and a first frame part 21 extending downward from a periphery of the one principal surface of the substrate; the first frame part in which an outer peripheral edge and an inner peripheral edge are substantially rectangular in a planar view and an external connection terminal is formed at four corners on its top surface; a plurality of first electrode pads 11 formed in a first recessed part surrounded with the first frame part and the one principal surface of the substrate; an electronic component element 4 mounted on the plurality of first electrode pads to have a temperature sensor function; a plurality of second electrode pads 7 formed on the other principal surface of the substrate; a piezoelectric vibration element 3 mounted on the plurality of second electrode pads; and a lid 5 for hermetically sealing the piezoelectric vibration element. The piezoelectric vibration element is connected by a conductive bonding material 8 only in an area overlapping the first recessed part in the plurality of second electrode pads in a planar view.SELECTED DRAWING: Figure 1

Description

本発明は表面実装型圧電振動デバイスに関する。 The present invention relates to a surface mount piezoelectric vibration device.

従来から圧電振動子や圧電発振器等の圧電デバイスは、外部基板の表面に半田付けされる表面実装型のものが広く用いられている。例えば表面実装型圧電デバイスでは、圧電振動素子と、集積回路素子(IC)やサーミスタ等の電子部品素子とを絶縁基板の表裏主面の各々に搭載し、圧電振動素子を、蓋を用いて気密に封止した構成のものが存在する。つまり、圧電振動素子と電子部品素子とが別個の空間に収容される構成となっている。 Conventionally, as a piezoelectric device such as a piezoelectric vibrator or a piezoelectric oscillator, a surface mount type which is soldered to the surface of an external substrate has been widely used. For example, in a surface-mounted piezoelectric device, a piezoelectric vibrating element and an electronic component element such as an integrated circuit element (IC) or a thermistor are mounted on each of the front and back main surfaces of an insulating substrate, and the piezoelectric vibrating element is airtight using a lid. There is a structure sealed in. That is, the piezoelectric vibration element and the electronic component element are housed in separate spaces.

前記構成の具体例としては、平板状の基板部の下面(外部基板と対向する側の主面)と、当該下面の外周部に設けられた枠部(下枠部)とで形成される下側凹部と、平板状の基板部の上面(外部基板と対向する側の主面と反対側の主面)と、当該上面の外周部に設けられた枠部(上枠部)とで形成される上側凹部とを備えた絶縁性ベース(いわゆる断面H形状のベース)を備えたものがある。 As a specific example of the above configuration, a lower surface formed by a lower surface of a flat plate-shaped substrate portion (main surface on the side facing the external substrate) and a frame portion (lower frame portion) provided on the outer peripheral portion of the lower surface portion. It is formed by a side recess, an upper surface of a flat plate-shaped substrate portion (a main surface opposite to the main surface on the side facing the external substrate), and a frame portion (upper frame portion) provided on the outer peripheral portion of the upper surface. Some are provided with an insulating base (so-called base having an H-shaped cross section) provided with an upper concave portion.

当該ベースでは前記上側凹部に圧電振動素子が搭載され、前記下側凹部にICやサーミスタ等の電子部品素子が搭載される。そして上側凹部の開口部を塞ぐように平板状の蓋が接合されることによって圧電振動素子が上側凹部内に気密封止される。このような構成の表面実装型圧電デバイスは、例えば特許文献1に開示されており、電子部品素子としてサーミスタが搭載された、温度センサ付き圧電振動子を示している。 In the base, a piezoelectric vibration element is mounted in the upper recess, and an electronic component element such as an IC or a thermistor is mounted in the lower recess. Then, the piezoelectric vibrating element is hermetically sealed in the upper recess by joining a flat plate-shaped lid so as to close the opening of the upper recess. A surface mount type piezoelectric device having such a configuration is disclosed in Patent Document 1, for example, and shows a piezoelectric vibrator with a temperature sensor on which a thermistor is mounted as an electronic component element.

なお、圧電振動素子は周囲温度により周波数が変動する周波数温度特性を有しているため、温度センサ付き圧電振動子(以下、TSXと称する)や温度補償圧電発振器(以下、TCXOと称する)と呼ばれる圧電振動デバイスでは、より正確な周波数温度特性を得るために、電子部品素子の温度センサから得られる温度情報に基づき、回路側で圧電振動素子の周波数を補正することで周波数精度を高めたものとなっている。 Since the piezoelectric vibrating element has a frequency temperature characteristic in which the frequency fluctuates depending on the ambient temperature, it is called a piezoelectric vibrator with a temperature sensor (hereinafter referred to as TSX) or a temperature-compensated piezoelectric oscillator (hereinafter referred to as TCXO). In the piezoelectric vibration device, in order to obtain more accurate frequency temperature characteristics, the frequency accuracy is improved by correcting the frequency of the piezoelectric vibration element on the circuit side based on the temperature information obtained from the temperature sensor of the electronic component element. It has become.

上述のような断面H型状のベースを含み、ベースの下側凹部を有するとともに下枠部の底面に外部接続端子が形成される絶縁性ベースでは、周辺部が肉厚で中央部分が肉薄となるため、外部基板等から発生した各種応力によってベースに撓みが生じ易くなる。この際、特にベースの基板部に搭載された圧電振動素子では、その保持部の加わる応力の影響が大きくなり特性劣化につながりやすい。特に、圧電振動素子は周囲温度により周波数が変動する周波数温度特性を有しているが、このような保持部での応力の影響を受けることで、周波数のずれが生じて本来の周波数温度特性との乖離が生まれる(ヒステリシス)。 In an insulating base that includes a base having an H-shaped cross section as described above, has a lower concave portion of the base, and has an external connection terminal formed on the bottom surface of the lower frame portion, the peripheral portion is thick and the central portion is thin. Therefore, the base is liable to bend due to various stresses generated from the external substrate or the like. At this time, particularly in the piezoelectric vibrating element mounted on the substrate portion of the base, the influence of the stress applied to the holding portion becomes large and the characteristics are likely to deteriorate. In particular, the piezoelectric vibrating element has a frequency temperature characteristic in which the frequency fluctuates depending on the ambient temperature, but due to the influence of the stress in such a holding portion, a frequency shift occurs and the original frequency temperature characteristic is restored. The divergence is created (hysteresis).

そして、TSXやTCXOと呼ばれる圧電振動デバイスでは、保持部の応力の影響を受けた圧電振動素子が、本来の圧電振動素子の周波数温度特性との乖離が生じると、その圧電振動素子の周波数情報から判断される温度情報と、電子部品素子の温度センサから得られる温度情報との間にずれが生じて、正確な周波数補正動作が行えなくなることがある。 Then, in the piezoelectric vibration device called TSX or TCXO, when the piezoelectric vibration element affected by the stress of the holding portion deviates from the frequency temperature characteristic of the original piezoelectric vibration element, the frequency information of the piezoelectric vibration element is used. There may be a discrepancy between the determined temperature information and the temperature information obtained from the temperature sensor of the electronic component element, and accurate frequency correction operation may not be possible.

特開2016−178628号JP 2016-178628

本発明は、かかる点に鑑みてなされたものであり、特性劣化が生じにくい信頼性を有する表面実装型圧電デバイスを提供することを目的とするものである。 The present invention has been made in view of the above points, and an object of the present invention is to provide a surface mount type piezoelectric device having reliability in which characteristic deterioration is unlikely to occur.

本発明では、上記目的を達成するために、次のように構成している。
すなわち、本発明の表面実装型圧電デバイスは、下方が一主面で上方が他主面となる平面視略矩形の基板部と、当該基板部の一主面の外周部から下方に伸びる第1枠部とからなるベース、外周縁と内周縁とが平面視略矩形であり、その上面の4隅に外部接続端子が形成された第1枠部、上記第1枠部と上記基板部の一主面とで囲まれた第1凹部に形成された複数の第1電極パッド、上記複数の第1電極パッドに搭載され温度センサ機能を有する電子部品素子、上記基板部の他主面に形成された複数の第2電極パッド、上記複数の第2電極パッドに搭載される圧電振動素子、上記圧電振動素子を気密封止する蓋、とを具備しており、上記圧電振動素子は、上記複数の第2電極パッドのうちの上記第1凹部と平面視重畳する領域内でのみ導電性接合材により接合されてなる。
In the present invention, in order to achieve the above object, it is configured as follows.
That is, in the surface-mounted piezoelectric device of the present invention, a substrate portion having a substantially rectangular shape in a plan view in which the lower portion is one main surface and the upper portion is the other main surface, and the first extending downward from the outer peripheral portion of one main surface of the substrate portion. A base composed of a frame portion, a first frame portion in which an outer peripheral edge and an inner peripheral edge are substantially rectangular in a plan view and external connection terminals are formed at four corners of the upper surface thereof, one of the first frame portion and the substrate portion. A plurality of first electrode pads formed in a first recess surrounded by a main surface, an electronic component element mounted on the plurality of first electrode pads and having a temperature sensor function, and formed on the other main surface of the substrate portion. It is provided with a plurality of second electrode pads, a piezoelectric vibrating element mounted on the plurality of second electrode pads, and a lid for airtightly sealing the piezoelectric vibrating element. It is joined by the conductive joining material only in the region of the second electrode pad that overlaps with the first recess in a plan view.

本発明によれば、上記圧電振動素子は、上記複数の第2電極パッドのうちの上記第1凹部と平面視重畳する領域内でのみ導電性接合材により接合されてなることによって、外部基板等から発生した各種応力によってベースに撓みが生じたとしても、この接合領域は変形変位の小さい位置となるため、圧電振動素子に加わる応力の影響も小さくなる。また、第1凹部内に格納された電子部品素子と圧電振動素子の接合領域とが基板部を挟んだ面対向位置が近接することでお互いの温度環境に対する誤差が生じにくくなる。 According to the present invention, the piezoelectric vibrating element is bonded by a conductive bonding material only in a region where it overlaps with the first recess in the first recess of the plurality of second electrode pads in a plan view, whereby an external substrate or the like is formed. Even if the base is bent due to various stresses generated from the above, since this joint region is at a position where the deformation displacement is small, the influence of the stress applied to the piezoelectric vibrating element is also small. Further, since the joint regions of the electronic component element and the piezoelectric vibration element stored in the first recess are close to each other on the surface facing the substrate portion, an error with respect to each other's temperature environment is less likely to occur.

結果として、圧電振動素子の周波数温度特性のずれ込みが抑制でき、圧電振動素子と電子部品素子との温度情報の誤差がなくなるため、圧電振動素子の周波数を補正する場合に、その精度が高まり周波数安定度の高いより信頼性の高い表面実装型圧電振動デバイスが得られる。 As a result, the deviation of the frequency temperature characteristics of the piezoelectric vibrating element can be suppressed, and the error of the temperature information between the piezoelectric vibrating element and the electronic component element is eliminated. Therefore, when the frequency of the piezoelectric vibrating element is corrected, the accuracy is improved and the frequency is stable. A more reliable surface-mounted piezoelectric vibration device with a higher degree can be obtained.

また、上記構成に加えて、上記第1枠部の内周縁の重心と上記第1枠部の外周縁の重心が一致するとともに、上記第1枠部の内周縁の平面視面積が上記第1枠部の外周縁の平面視面積の1/3〜2/3の間で設定されてもよい。この構成では、上記作用効果に加えて、電子部品素子を収納するベースの下側凹部(第1凹部)の領域を確保することに対して、外部接続端子を形成する外部基板との接合領域とベース周辺部の厚肉の高強度の領域を確保する観点から最適な面積配分とすることができる。 Further, in addition to the above configuration, the center of gravity of the inner peripheral edge of the first frame portion and the center of gravity of the outer peripheral edge of the first frame portion coincide with each other, and the plane view area of the inner peripheral edge of the first frame portion is the first. It may be set between 1/3 and 2/3 of the plan view area of the outer peripheral edge of the frame portion. In this configuration, in addition to the above-mentioned effects, the area of the lower concave portion (first concave portion) of the base for accommodating the electronic component element is secured, whereas the joint region with the external substrate forming the external connection terminal is used. The optimum area allocation can be made from the viewpoint of securing a thick and high-strength area around the base.

つまり、上記第1枠部の内周縁の重心と上記第1枠部の外周縁の重心が一致することで、ベースの下側凹部が中央部分に形成されるため、ベースの曲げ応力が均一となり不要な応力集中がなくなる。上記第1枠部の内周縁の平面視面積が上記第1枠部の外周縁の平面視面積の1/3より小さく形成すると、電子部品素子の収納スペースを確保することが困難となる。上記第1枠部の内周縁の平面視面積が上記第1枠部の外周縁の平面視面積の2/3より大きく形成すると、外部接続端子を形成する領域を確保することが難しくなるため外部基板との接合強度が低下する。またベース周辺部の厚肉の高強度の領域が少なくなるため、外部基板等から発生した各種応力によってベースに撓みが生じ易くなる。 That is, when the center of gravity of the inner peripheral edge of the first frame portion and the center of gravity of the outer peripheral edge of the first frame portion coincide with each other, the lower concave portion of the base is formed in the central portion, so that the bending stress of the base becomes uniform. Eliminates unnecessary stress concentration. If the plan view area of the inner peripheral edge of the first frame portion is smaller than 1/3 of the plan view area of the outer peripheral edge of the first frame portion, it becomes difficult to secure a storage space for the electronic component element. If the plan view area of the inner peripheral edge of the first frame portion is formed to be larger than two-thirds of the plan view area of the outer peripheral edge of the first frame portion, it becomes difficult to secure an area for forming the external connection terminal. The bonding strength with the substrate is reduced. Further, since the thick and high-strength region around the base is reduced, the base is likely to be bent by various stresses generated from the external substrate or the like.

また、上記構成に加えて、下方が一主面で上方が他主面となる平面視略矩形の基板部と、当該基板部の一主面の外周部から下方に伸びる第1枠部と、当該基板部の他主面の外周部から上方に伸びる第2枠部とからなるベース、外周縁と内周縁とが平面視略矩形である第2枠部、上記第2枠部と上記基板部の他主面とで囲まれた第2凹部に形成された複数の第2電極パッド、とを具備しており、上記第1凹部は上記第2凹部より平面視面積が小さく、かつ上記第2凹部の領域内部で平面視重畳するように形成してもよい。この構成では、上記作用効果に加えて、圧電振動素子を収納するベースの上側凹部(第2凹部)の領域を確保するとともに、上記第2枠部によるベース周辺部の厚肉の高強度の領域を確保することができる。また、上記第2凹部では上記第1凹部に比べて平面視面積が大きく形成できるため、より低周波で大型の圧電振動素子の搭載を妨げることがない。 Further, in addition to the above configuration, a substrate portion having a substantially rectangular plan view in which the lower portion is one main surface and the upper portion is the other main surface, and a first frame portion extending downward from the outer peripheral portion of one main surface of the substrate portion. A base composed of a second frame portion extending upward from the outer peripheral portion of the other main surface of the substrate portion, a second frame portion in which the outer peripheral edge and the inner peripheral edge are substantially rectangular in a plan view, the second frame portion and the substrate portion. It is provided with a plurality of second electrode pads formed in a second recess surrounded by another main surface, and the first recess has a smaller plan view area than the second recess and the second recess. It may be formed so as to overlap in a plan view inside the region of the recess. In this configuration, in addition to the above-mentioned action and effect, the area of the upper concave portion (second concave portion) of the base for accommodating the piezoelectric vibrating element is secured, and the thick and high-strength region of the peripheral portion of the base by the second frame portion is secured. Can be secured. Further, since the second recess can be formed to have a larger plane viewing area than the first recess, it does not hinder the mounting of a large piezoelectric vibration element at a lower frequency.

また、上記構成に加えて、上記圧電振動素子は上記ベースと上記蓋により真空雰囲気内で気密封止されていてもよい。この構成では、上記作用効果に加えて、圧電振動素子に対する外環温度の影響を抑制することができる。 Further, in addition to the above configuration, the piezoelectric vibrating element may be hermetically sealed in a vacuum atmosphere by the base and the lid. In this configuration, in addition to the above-mentioned effects, the influence of the outer ring temperature on the piezoelectric vibrating element can be suppressed.

以上のように、特性劣化が生じにくい信頼性を有する表面実装型圧電デバイスを提供することができる。 As described above, it is possible to provide a surface mount type piezoelectric device having reliability in which characteristic deterioration is unlikely to occur.

本発明の実施形態に係る水晶振動子の概略構成を示す断面図である。It is sectional drawing which shows the schematic structure of the crystal oscillator which concerns on embodiment of this invention. 本発明の実施形態に係る水晶振動子の底面図である。It is a bottom view of the crystal oscillator which concerns on embodiment of this invention.

以下、本発明の実施形態について図面を参照しながら説明する。以下に述べる本発明の実施形態において、表面実装型圧電振動デバイスとして、電子部品素子としてサーミスタなどの感温素子を使用した温度センサ付きの表面実装型水晶振動子(以下、水晶振動子)を例に挙げて説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the embodiment of the present invention described below, as a surface mount piezoelectric vibration device, a surface mount type crystal oscillator (hereinafter, crystal oscillator) with a temperature sensor using a temperature sensitive element such as a thermistor as an electronic component element is an example. It will be explained by listing in.

本発明の実施形態を図1、図2を用いて説明する。なお、図2については、水晶振動子の底面図であり、かつ一対の水晶搭載用パッド7,7に導電性接着剤8を介して水晶振動素子3が搭載されている状態を一部破線にて透過して示している。水晶振動子1は略直方体状のパッケージであり、平面視では矩形状、断面ではH型形状となっている。本実施形態では水晶振動子1の平面視の外形寸法は、長辺(図2のL方向)が1.6mm、短辺(図2のW方向)が1.2mmであり、その発振周波数は38.4MHz〜76.8MHzとなっている。なお、上記水晶振動子1は、ベース2と、水晶振動素子3と、電子部品素子4と、蓋5とが主な構成部材となっている。本実施形態では上記電子部品素子4として温度センサであるサーミスタ(以下「サーミスタ4」という)が用いられている。水晶振動子1は、サーミスタ4から得られた温度情報に基づいて外部で温度補償が行われる。以下、水晶振動子1を構成する各部材の概略について説明する。 An embodiment of the present invention will be described with reference to FIGS. 1 and 2. Note that FIG. 2 is a bottom view of the crystal oscillator, and a broken line shows a state in which the crystal vibrating element 3 is mounted on the pair of crystal mounting pads 7 and 7 via the conductive adhesive 8. It is shown transparently. The crystal oscillator 1 is a substantially rectangular parallelepiped package, and has a rectangular shape in a plan view and an H shape in a cross section. In the present embodiment, the external dimensions of the crystal oscillator 1 in a plan view are 1.6 mm on the long side (L direction in FIG. 2) and 1.2 mm on the short side (W direction in FIG. 2), and the oscillation frequency is It is 38.4 MHz to 76.8 MHz. The crystal oscillator 1 is mainly composed of a base 2, a crystal vibrating element 3, an electronic component element 4, and a lid 5. In this embodiment, a thermistor (hereinafter referred to as "thermistor 4"), which is a temperature sensor, is used as the electronic component element 4. The crystal oscillator 1 is externally temperature-compensated based on the temperature information obtained from the thermistor 4. Hereinafter, the outline of each member constituting the crystal oscillator 1 will be described.

ベース2は絶縁性材料からなる平面視矩形状の容器である。ベース2は、平板状の基板部20と、基板部20の一主面201の外周部200に沿って下方に伸び外周縁210と内周縁211とが平面視略矩形の第1枠部21と、基板部20の他主面202の外周部200に沿って上方に伸び外周縁220と内周縁221とが平面視略矩形の第2枠部22とが主な構成部材(断面略H型)となっている。ここで基板部20の一主面201は、外部基板に対向する側の主面であり、基板部20の他主面202は電子部品としてのサーミスタ4が収容される主面とは反対側の主面となっている。本実施形態では基板部20と第1枠部21と第2枠部22の各々は、セラミックグリーンシート(アルミナ)となっており、これら3つのシートが積層された状態で焼成によって一体成形されている。これらのシートの積層間には所定形状の内部配線が形成されている。なお、これらの各シート(基板部のシート・第1枠部のシート・第2枠部のシート)については、積層間の内部配線の延出形態に応じて単層だけでなく複数層に分けて形成してもよい。 The base 2 is a rectangular container in a plan view made of an insulating material. The base 2 has a flat plate-shaped substrate portion 20 and a first frame portion 21 in which the outer peripheral edge 210 and the inner peripheral edge 211 extend downward along the outer peripheral portion 200 of one main surface 201 of the substrate portion 20 and are substantially rectangular in a plan view. , The outer peripheral edge 220 and the inner peripheral edge 221 extend upward along the outer peripheral portion 200 of the other main surface 202 of the substrate portion 20, and the second frame portion 22 having a substantially rectangular plan view is a main constituent member (cross section substantially H type). It has become. Here, one main surface 201 of the substrate portion 20 is the main surface on the side facing the external substrate, and the other main surface 202 of the substrate portion 20 is on the side opposite to the main surface in which the thermistor 4 as an electronic component is housed. It is the main surface. In the present embodiment, each of the substrate portion 20, the first frame portion 21, and the second frame portion 22 is a ceramic green sheet (alumina), and these three sheets are integrally molded by firing in a laminated state. There is. Internal wiring having a predetermined shape is formed between the laminated sheets. In addition, each of these sheets (the sheet of the substrate portion, the sheet of the first frame portion, and the sheet of the second frame portion) is divided into not only a single layer but also a plurality of layers according to the extension form of the internal wiring between the layers. May be formed.

ベース2の第2枠部22の内周縁221と基板部の他主面202とで囲まれた空間は第2凹部2Bとなっている。第2凹部2Bは、平面視略矩形であり第2枠部22の内周縁221と同一形状となる。第2凹部2Bの周囲の上第2枠部22の内周縁は、平面視で略矩形となっており、当該内周縁の4隅は平面視で円弧状となっている。第2凹部2Bの内底面(基板部20の他主面202)の一端側には、水晶振動素子3と導電接合される一対の水晶搭載用パッド7,7が並列して形成されている(一方のみ図示)。当該水晶搭載用パッド7には、導電性接着剤8によって水晶振動素子3の一端側が導電接合される。 The space surrounded by the inner peripheral edge 221 of the second frame portion 22 of the base 2 and the other main surface 202 of the substrate portion is the second recess 2B. The second recess 2B has a substantially rectangular shape in a plan view and has the same shape as the inner peripheral edge 221 of the second frame portion 22. The inner peripheral edge of the upper second frame portion 22 around the second concave portion 2B is substantially rectangular in a plan view, and the four corners of the inner peripheral edge are arcuate in a plan view. A pair of crystal mounting pads 7 and 7 conductively bonded to the crystal vibrating element 3 are formed in parallel on one end side of the inner bottom surface (the other main surface 202 of the substrate portion 20) of the second recess 2B ( Only one is shown). One end side of the crystal vibrating element 3 is conductively bonded to the crystal mounting pad 7 by the conductive adhesive 8.

ベース2の第1枠部21の内周縁211と基板部の一主面201とで囲まれた空間は第1凹部2Aとなっている。第1凹部2Aは、平面視正方形であり第1枠部21の内周縁211と同一形状となる。第1凹部2Aは、第2凹部2Bよりも平面視の大きさが小さくなっており、平面視透過では、第1凹部2Aは第2凹部2Bに内包される位置関係となっている。 The space surrounded by the inner peripheral edge 211 of the first frame portion 21 of the base 2 and the one main surface 201 of the substrate portion is the first recess 2A. The first recess 2A is a square in a plan view and has the same shape as the inner peripheral edge 211 of the first frame portion 21. The size of the first recess 2A is smaller than that of the second recess 2B in a plan view, and the first recess 2A is included in the second recess 2B in the plan view transmission.

また、本発明では、第1枠部21の内周縁211の重心O2と第1枠部の外周縁210の重心01が一致するとともに、第1枠部21の内周縁211の平面視面積が第1枠部211の外周縁210の平面視面積の1/3〜2/3(約33.3%〜66.6%)の間で設定していることが望ましい。具体的には、本発明の実施形態では、第1枠部21の外周縁210の長辺が1.6mmで短辺が1.2mmであることから、第1枠部21の外周縁210の平面視面積が1.92mm2にて設定している。これに対して、正方形の第1凹部2A(第1枠部21の内周縁211)の1辺が0.85mmであることから、第1枠部21の内周縁211の平面視面積が0.7225mm2にて設定している。このため、第1枠部21の内周縁211の平面視面積が第1枠部211の外周縁210の平面視面積の約37%で設定されている。 Further, in the present invention, the center of gravity O2 of the inner peripheral edge 211 of the first frame portion 21 and the center of gravity 01 of the outer peripheral edge 210 of the first frame portion coincide with each other, and the plane view area of the inner peripheral edge 211 of the first frame portion 21 is the first. It is desirable that the setting is between 1/3 to 2/3 (about 33.3% to 66.6%) of the plan view area of the outer peripheral edge 210 of the frame portion 211. Specifically, in the embodiment of the present invention, since the long side of the outer peripheral edge 210 of the first frame portion 21 is 1.6 mm and the short side is 1.2 mm, the outer peripheral edge 210 of the first frame portion 21 The plan view area is set to 1.92 mm 2. On the other hand, since one side of the square first recess 2A (inner peripheral edge 211 of the first frame portion 21) is 0.85 mm, the plan-viewing area of the inner peripheral edge 211 of the first frame portion 21 is 0. It is set at 7225 mm 2. Therefore, the plan view area of the inner peripheral edge 211 of the first frame portion 21 is set to be about 37% of the plan view area of the outer peripheral edge 210 of the first frame portion 211.

このように構成することで、第1枠部21の内周縁211の重心O2と第1枠部の外周縁210の重心O1が一致することで、ベース2の第1凹部2Aが中央部分に形成されるため、ベース2の曲げ応力が均一となり不要な応力集中がなくなる。第1枠部21の内周縁211の平面視面積が第1枠部21の外周縁210の平面視面積の約37%(約33.3%〜66.6%の間)で設定しているため、後述するサーミスタ4の収納スペースと、後述する外部接続端子10a,10b,10c,10dとの領域を最適な状態で形成することができる。結果として、外部基板との接合強度を低下させることなく、ベース周辺部の厚肉の高強度の領域も確保できるため、外部基板等から発生した各種応力によってベース2に撓みが生じ易にくくできる。 With this configuration, the center of gravity O2 of the inner peripheral edge 211 of the first frame portion 21 and the center of gravity O1 of the outer peripheral edge 210 of the first frame portion coincide with each other, so that the first concave portion 2A of the base 2 is formed in the central portion. Therefore, the bending stress of the base 2 becomes uniform and unnecessary stress concentration is eliminated. The plan view area of the inner peripheral edge 211 of the first frame portion 21 is set to be about 37% (between about 33.3% and 66.6%) of the plan view area of the outer peripheral edge 210 of the first frame portion 21. Therefore, the area of the thermistor 4 storage space described later and the external connection terminals 10a, 10b, 10c, and 10d described later can be formed in an optimum state. As a result, it is possible to secure a thick and high-strength region around the base without lowering the bonding strength with the external substrate, so that the base 2 can be less likely to be bent due to various stresses generated from the external substrate or the like.

本実施形態において第1枠部21の外周縁210は、平面視矩形状となっており、ベース2の平面視の外形形状と略一致している。一方、第1枠部21の内周縁211、すなわち、第1凹部2Aの開口端は、平面視で正方形状となっている。第1凹部2Aの開口端を構成する各辺は、第1枠部21の外周縁210の短辺および長辺と略平行となっている。そして第1枠部21の内周縁211の4つの各隅は、平面視で円弧状となっている。つまり第1枠部21の内周縁211の4隅は、平面視で正方形状の第1凹部2Aの角部を円弧状(4分の1円状)に丸めたような平面視形状となっている。 In the present embodiment, the outer peripheral edge 210 of the first frame portion 21 has a rectangular shape in a plan view, and substantially matches the outer shape of the base 2 in a plan view. On the other hand, the inner peripheral edge 211 of the first frame portion 21, that is, the open end of the first recess 2A has a square shape in a plan view. Each side forming the open end of the first recess 2A is substantially parallel to the short side and the long side of the outer peripheral edge 210 of the first frame portion 21. Each of the four corners of the inner peripheral edge 211 of the first frame portion 21 has an arc shape in a plan view. That is, the four corners of the inner peripheral edge 211 of the first frame portion 21 have a plan view shape in which the corners of the square first recess 2A in a plan view are rounded into an arc shape (quarter circle shape). There is.

平面視矩形状の第1枠部21の外周縁210の4つの角部には、切り欠き部9a,9b,9c,9dが形成されている。これら切り欠き部9a,9b,9c,9dは、ベース2の外側面の4つの稜部の各々において少なくとも第1枠部21を上下方向に貫くように切り欠かれており、平面視では4分の1円状となっている。これら4つの切り欠き部9a,9b,9c,9dの各々の内壁面には、導体が被着されている。各導体は、後述する4つの各外部接続端子10a,10b,10c,10dにそれぞれ接続されている。 Notches 9a, 9b, 9c, and 9d are formed at the four corners of the outer peripheral edge 210 of the first frame portion 21 having a rectangular shape in a plan view. These notches 9a, 9b, 9c, 9d are notched so as to penetrate at least the first frame portion 21 in the vertical direction at each of the four ridges on the outer surface of the base 2, and are 4 minutes in a plan view. It is in the shape of a circle. A conductor is adhered to the inner wall surface of each of these four notched portions 9a, 9b, 9c, and 9d. Each conductor is connected to each of the four external connection terminals 10a, 10b, 10c, and 10d, which will be described later.

第1凹部2Aの内底面、すなわち、基板部20の他主面201には、サーミスタ4と導電接合される一対のサーミスタ搭載用パッド11,11が、互いに対向するように形成されている。この一対のサーミスタ搭載用パッド11,11は、一対の引き出し電極12,12とそれぞれ接続されている。この一対の引き出し電極12,12は、内部配線を経由してサーミスタ用の外部接続端子10b,10dとそれぞれ電気的に接続されている。一対のサーミスタ搭載用パッド11,11は、半田Sによってサーミスタ4の両端の電極4E,4Eに導電接合される。なお半田Sには、鉛(Pb)を含有しない鉛フリー半田が用いられている。 A pair of thermistor mounting pads 11 and 11 conductively bonded to the thermistor 4 are formed on the inner bottom surface of the first recess 2A, that is, on the other main surface 201 of the substrate portion 20 so as to face each other. The pair of thermistor mounting pads 11 and 11 are connected to the pair of drawer electrodes 12 and 12, respectively. The pair of lead-out electrodes 12 and 12 are electrically connected to the external connection terminals 10b and 10d for the thermistor via internal wiring, respectively. The pair of thermistor mounting pads 11 and 11 are conductively bonded to the electrodes 4E and 4E at both ends of the thermistor 4 by solder S. As the solder S, lead-free solder containing no lead (Pb) is used.

一対のサーミスタ搭載用パッド11,11は、本実施形態では、第1枠部21の外周縁210の短辺方向で互いに対向するように配置されている。つまり、後述する略直方体形状のサーミスタ4の長手方向が、第1枠部21の外周縁210の長辺、すなわち、ベース2の長辺と直交するようにサーミスタ4が、サーミスタ搭載用パッド11,11上に導電接合されることになる。このような位置関係でサーミスタ4が搭載されることにより、水晶振動子1を外部基板へ実装した後にサーミスタ4に働く応力を緩和することができる。 In this embodiment, the pair of thermistor mounting pads 11 and 11 are arranged so as to face each other in the short side direction of the outer peripheral edge 210 of the first frame portion 21. That is, the thermistor 4 has the thermistor mounting pad 11, so that the longitudinal direction of the thermistor 4 having a substantially rectangular parallelepiped shape, which will be described later, is orthogonal to the long side of the outer peripheral edge 210 of the first frame portion 21, that is, the long side of the base 2. It will be conductively bonded onto the 11. By mounting the thermistor 4 in such a positional relationship, it is possible to relieve the stress acting on the thermistor 4 after mounting the crystal oscillator 1 on the external substrate.

これは、水晶振動子1が実装された外部基板は、曲げ応力等が働くことによって外部基板に撓みが生じることがある。外部基板が撓むことにより、外部基板と半田を介して接合された水晶振動子1にも応力が伝わる。ベース2は平面視矩形状であり、ベース長辺の方がベース短辺よりも相対的に撓み量が大きくなる。このため、略直方体形状のサーミスタ4の長手方向が、相対的に撓み易いベース2の長辺と直交するように第1凹部2A内で接合する方が、ベース2の長辺と平行になるように第1凹部2A内で接合するよりも、ベース2の撓み量がより少ない方向でサーミスタ4を固着することができる。その結果、サーミスタ4に働く曲げ応力等を緩和することができる。 This is because the external substrate on which the crystal oscillator 1 is mounted may be bent due to bending stress or the like. When the external substrate bends, stress is also transmitted to the crystal oscillator 1 bonded to the external substrate via solder. The base 2 has a rectangular shape in a plan view, and the long side of the base has a relatively larger amount of deflection than the short side of the base. Therefore, it is better to join the thermistor 4 having a substantially rectangular parallelepiped shape in the first recess 2A so that the longitudinal direction of the thermistor 4 is orthogonal to the long side of the base 2, which is relatively easy to bend, so that it is parallel to the long side of the base 2. The thermistor 4 can be fixed in a direction in which the amount of deflection of the base 2 is smaller than that of joining in the first recess 2A. As a result, the bending stress acting on the thermistor 4 can be relaxed.

第2枠部22と基板部20と第1枠部21とで構成されるベース2は、図1に示す断面視では、第2枠部22と第1枠部21との枠幅が略等しいと見なすと、基板部20の上下に第1凹部2A、第2凹部2Bを有するアルファベットの「H」状(H型)のパッケージ構造となっている。このようなパッケージ構造により、水晶振動素子3とサーミスタ4とが、別空間である上下の第2凹部2B、第1凹部2Aに収容されるため、製造過程で発生するガスの影響や、他の素子から発生するノイズの影響を受けにくくすることができるという効果がある。また水晶振動素子3とサーミスタ4とは、互いに接近した状態で1つのベース2内に収容されているため、水晶振動素子3の実際の温度とサーミスタ4の測定値との差異を小さくすることができる。さらに本実施形態における水晶振動子1は、温度補償回路を内蔵していない非温度補償デバイスであるため、良好な位相雑音特性を得ることができる。 The base 2 composed of the second frame portion 22, the substrate portion 20, and the first frame portion 21 has substantially the same frame width between the second frame portion 22 and the first frame portion 21 in the cross-sectional view shown in FIG. Considering that, the package structure has an alphabetical "H" shape (H type) having a first recess 2A and a second recess 2B above and below the substrate portion 20. Due to such a package structure, the crystal vibrating element 3 and the thermistor 4 are housed in the upper and lower second recesses 2B and first recesses 2A, which are separate spaces, so that the influence of gas generated in the manufacturing process and other factors may occur. It has the effect of making it less susceptible to the effects of noise generated from the element. Further, since the crystal oscillator 3 and the thermistor 4 are housed in one base 2 in a state of being close to each other, the difference between the actual temperature of the crystal oscillator 3 and the measured value of the thermistor 4 can be reduced. it can. Further, since the crystal oscillator 1 in the present embodiment is a non-temperature compensating device that does not have a built-in temperature compensating circuit, good phase noise characteristics can be obtained.

ベース2の第2枠部22の上面には、図1に示すように金属膜6が形成されている。この金属膜6と蓋5に形成された後述の封止材とが、接触した状態で加熱されることにより、蓋5とベース2とが溶着される。本実施形態では金属膜6は金メッキ層(Au)であるが、金以外の金属を使用してもよい。これにより、水晶振動素子3が、第2凹部2Bと蓋5による空間内部に気密封止される。この際、水晶圧電振動素子3は真空雰囲気内で気密封止されることが望ましい。この構成では、水晶振動素子3に対する外環温度の影響を抑制することができる。 As shown in FIG. 1, a metal film 6 is formed on the upper surface of the second frame portion 22 of the base 2. The metal film 6 and the sealing material (described later) formed on the lid 5 are heated in contact with each other to weld the lid 5 and the base 2. In the present embodiment, the metal film 6 is a gold-plated layer (Au), but a metal other than gold may be used. As a result, the crystal vibrating element 3 is airtightly sealed inside the space by the second recess 2B and the lid 5. At this time, it is desirable that the crystal piezoelectric vibrating element 3 is airtightly sealed in a vacuum atmosphere. With this configuration, the influence of the outer ring temperature on the crystal vibrating element 3 can be suppressed.

図1において、水晶振動素子3はATカット水晶振動板の表裏主面に各種電極が形成された平面視矩形状の圧電振動素子である。なお、図1では記載を省略しているが、水晶振動素子3の略中央部分には、励振電極が表裏で対向するように一対で形成されている。前記一対の励振電極の各々から水晶振動素子3の表裏主面の一短辺縁部に向かって引出電極が引き出されている。この引出電極の終端部は、接合用の電極となっており、上記一対の水晶搭載用パッド7,7と導電性接着剤8とによって片持ち支持されて接合されるようになっている。この時、図1、または図2の破線部分に示すように、水晶振動素子3は、一対の水晶搭載用パッド7,7のうちの第1凹部2Aと平面視重畳する領域内でのみ導電性接着剤8により接合されていることが本発明の特徴となっている。なお、本実施形態では導電性接着剤8にシリコーン系の接着剤が使用されているが、シリコーン系以外の導電性接着剤を使用してもよい。 In FIG. 1, the crystal vibrating element 3 is a piezoelectric vibrating element having a rectangular shape in a plan view in which various electrodes are formed on the front and back main surfaces of an AT-cut crystal diaphragm. Although the description is omitted in FIG. 1, a pair of excitation electrodes are formed in a substantially central portion of the crystal vibrating element 3 so as to face each other on the front and back sides. The extraction electrode is drawn out from each of the pair of excitation electrodes toward one short edge of the front and back main surfaces of the crystal vibration element 3. The end portion of the extraction electrode is an electrode for joining, and is cantilevered and joined by the pair of crystal mounting pads 7 and 7 and the conductive adhesive 8. At this time, as shown by the broken line portion of FIG. 1 or 2, the crystal vibrating element 3 is conductive only in the region where it overlaps with the first recess 2A of the pair of crystal mounting pads 7 and 7 in a plan view. It is a feature of the present invention that they are joined by the adhesive 8. Although a silicone-based adhesive is used as the conductive adhesive 8 in the present embodiment, a conductive adhesive other than the silicone-based adhesive may be used.

このように構成することで、外部基板等から発生した各種応力によってベース2に撓みが生じたとしても、水晶振動素子3と一対の水晶搭載用パッド7,7との接合領域(導電性接着剤8との接合部分)は変形変位の小さい位置となるため、水晶振動素子3に加わる応力の影響も小さくなる。また、第1凹部2Aの内に格納された水晶振動素子3とサーミスタ4との接合領域とが基板部20を挟んだ面対向位置が近接することでお互いの温度環境に対する誤差が生じにくくなる。結果として、水晶振動素子3の周波数温度特性のずれ込みが抑制でき、水晶振動素子3とサーミスタ4との温度情報の誤差がなくなるため、水晶振動素子3の周波数を補正する場合に、その精度が高まり周波数安定度の高いより信頼性の高い温度センサ付きの表面実装型水晶振動子が得られる。 With this configuration, even if the base 2 is bent due to various stresses generated from an external substrate or the like, the bonding region between the crystal vibrating element 3 and the pair of crystal mounting pads 7 and 7 (conductive adhesive). Since the joint portion with 8) is located at a position where the deformation displacement is small, the influence of the stress applied to the crystal vibrating element 3 is also small. Further, since the bonding regions of the crystal vibrating element 3 and the thermistor 4 housed in the first recess 2A are close to each other on the surface facing the substrate portion 20, an error with respect to each other's temperature environment is less likely to occur. As a result, the deviation of the frequency temperature characteristic of the crystal vibrating element 3 can be suppressed, and the error of the temperature information between the crystal vibrating element 3 and the thermistor 4 is eliminated. Therefore, when the frequency of the crystal vibrating element 3 is corrected, the accuracy is improved. A surface-mounted crystal unit with a more reliable temperature sensor with high frequency stability can be obtained.

本実施形態では、上記のように温度センサとしてサーミスタ4を用いている。サーミスタ4は温度上昇に対して抵抗値が減少する、いわゆるNTCサーミスタ(Negative Temperature Coefficient Thermistor )であり、圧電デバイスの小型化に対応したチップタイプのものが用いられている。図2においてサーミスタ4は略直方体形状であり、その平面視の大きさは0.6mm×0.3mmとなっている。なお本実施形態におけるサーミスタの大きさは一例であり、前記サイズ以外のサーミスタであってもよい。また、サーミスタに限らず、ダイオードなどの他の温度センサを使用してもよい。 In this embodiment, the thermistor 4 is used as the temperature sensor as described above. The thermistor 4 is a so-called NTC thermistor (Negative Temperature Coefficient Thermistor) whose resistance value decreases with increasing temperature, and a chip type thermistor corresponding to the miniaturization of a piezoelectric device is used. In FIG. 2, the thermistor 4 has a substantially rectangular parallelepiped shape, and its size in a plan view is 0.6 mm × 0.3 mm. The size of the thermistor in this embodiment is an example, and the thermistor other than the above size may be used. Further, not limited to the thermistor, another temperature sensor such as a diode may be used.

図1において、蓋5は平面視矩形状の平板である。蓋5はコバールが基材となっており、基材の表面にニッケルメッキと金メッキが施されている。そして蓋5のベース2と接合される側の主面の外周部には、封止材として金錫合金(AuSn)が枠状に形成されている。なお封止材として金錫合金以外の材料を用いてもよい。 In FIG. 1, the lid 5 is a flat plate having a rectangular shape in a plan view. The lid 5 is made of Kovar as a base material, and the surface of the base material is nickel-plated and gold-plated. A gold-tin alloy (AuSn) is formed in a frame shape as a sealing material on the outer peripheral portion of the main surface of the lid 5 on the side to be joined to the base 2. A material other than the gold-tin alloy may be used as the sealing material.

本実施形態では図1に示すように、第2枠部22と基板部20の内部を貫通し、その内部に導体が充填されたビアVが形成されている。ビアVの一端は、第2枠部22の上面に露出しており、金属膜6と電気的に接続されている。一方、ビアVの他端は、ベース2の内部配線と接続されており、当該内部配線を経由して外部接続端子10dと接続されている。つまり、金属製の蓋5と外部接続端子10dとはグランド接続されている。このようにグランド接続することによって電磁的シールド効果を得ることができる。以上が温度センサ付きの表面実装型水晶振動子(以下、水晶振動子)の各構成部材の概略である。 In the present embodiment, as shown in FIG. 1, a via V that penetrates the inside of the second frame portion 22 and the substrate portion 20 and is filled with a conductor is formed therein. One end of the via V is exposed on the upper surface of the second frame portion 22, and is electrically connected to the metal film 6. On the other hand, the other end of the via V is connected to the internal wiring of the base 2 and is connected to the external connection terminal 10d via the internal wiring. That is, the metal lid 5 and the external connection terminal 10d are ground-connected. By connecting to the ground in this way, an electromagnetic shielding effect can be obtained. The above is an outline of each component of a surface mount type crystal unit with a temperature sensor (hereinafter referred to as a crystal unit).

次に、外部接続端子について説明する。図2に示すように、第1枠部21の底面212、すなわち、ベース2の底面の外周縁は、平面視矩形状となっており、当該底面212の4隅の各々に外部接続端子10a,10b,10c,10dが形成されている。これら4つの外部接続端子10a,10b,10c,10dは、外部基板と半田によって接合される端子である。なお本実施形態では、外部接続端子10a〜10dは、3種類の金属の積層構成となっている。具体的には前記外部接続端子10a〜10dは、ベース2の基材(セラミック)上に印刷処理によってモリブデン層が形成され、当該モリブデン層の上に、ニッケルめっき層、金めっき層の順でめっき層が積層された構成となっている。前記ニッケルめっき層および前記金めっき層は、電解めっき法によって形成されており、外部接続端子10a〜10dとパッド等が一括同時に形成されている。なお上記外部接続端子10a〜10dの各層を構成する金属材料は一例であり、他の金属材料を使用してもよい。例えばモリブデンに代えてタングステンを用いてもよい。 Next, the external connection terminal will be described. As shown in FIG. 2, the bottom surface 212 of the first frame portion 21, that is, the outer peripheral edge of the bottom surface of the base 2 has a rectangular shape in a plan view, and the external connection terminals 10a are connected to each of the four corners of the bottom surface 212. 10b, 10c, 10d are formed. These four external connection terminals 10a, 10b, 10c, and 10d are terminals that are joined to the external board by soldering. In this embodiment, the external connection terminals 10a to 10d have a laminated structure of three types of metals. Specifically, in the external connection terminals 10a to 10d, a molybdenum layer is formed on the base material (ceramic) of the base 2 by a printing process, and the nickel plating layer and the gold plating layer are plated on the molybdenum layer in this order. It has a structure in which layers are laminated. The nickel plating layer and the gold plating layer are formed by an electrolytic plating method, and external connection terminals 10a to 10d and pads and the like are formed at the same time. The metal material constituting each layer of the external connection terminals 10a to 10d is an example, and other metal materials may be used. For example, tungsten may be used instead of molybdenum.

4つの外部接続端子10a,10b,10c,10dのうち、外部接続端子10aと10cは、水晶振動素子3の表裏主面の図示しない各励振電極と電気的に接続されている。残りの外部接続端子10bと10dは、サーミスタ4の両端の電極4E,4Eとそれぞれ電気的に接続されている。つまり、外部接続端子10aと10cは、水晶振動素子用の外部接続端子であり、外部接続端子10bと10dは、サーミスタ用の外部接続端子となっている。ここで水晶振動素子用の外部接続端子10aと10cは、サーミスタ用の外部接続端子10bと10dとは互いに電気的に接続されることはなく別個独立した状態となっている。換言すれば、外部接続端子10aと10cは、水晶振動素子3の励振電極とのみ電気的に接続されている。外部接続端子10bと10dは、サーミスタ4の両端の電極4E,4Eとのみ電気的に接続されている。 Of the four external connection terminals 10a, 10b, 10c, and 10d, the external connection terminals 10a and 10c are electrically connected to each excitation electrode (not shown) on the front and back main surfaces of the crystal vibration element 3. The remaining external connection terminals 10b and 10d are electrically connected to the electrodes 4E and 4E at both ends of the thermistor 4, respectively. That is, the external connection terminals 10a and 10c are external connection terminals for the crystal oscillator, and the external connection terminals 10b and 10d are external connection terminals for the thermistor. Here, the external connection terminals 10a and 10c for the crystal vibration element are not electrically connected to each other and are in a separate and independent state from the external connection terminals 10b and 10d for the thermistor. In other words, the external connection terminals 10a and 10c are electrically connected only to the excitation electrode of the crystal vibration element 3. The external connection terminals 10b and 10d are electrically connected only to the electrodes 4E and 4E at both ends of the thermistor 4.

また、前記4つの外部接続端子10a,10b,10c,10dは、平面視では、ベース2の短辺方向に長く、ベース2の長辺方向に短いアルファベットの「L」のように屈曲した形状となっており、この屈曲した部分の内周縁側は円弧状となっている。平面視矩形状のベース2は、上記のようにベース長辺の方がベース短辺よりも相対的に撓みが大きく、ベース長辺の中央部分の撓み量が最大となるため、外部接続端子10a,10b,10c,10dの先端を、ベース長辺方向へあまり延出させるのは好ましくない。このため、半田接合の領域を確保するためには、外部接続端子10a,10b,10c,10dの先端を、ベース短辺方向へ長く延出させるのが好ましい。 Further, the four external connection terminals 10a, 10b, 10c, and 10d have a shape bent like the alphabet "L" which is long in the short side direction of the base 2 and short in the long side direction of the base 2 in a plan view. The inner peripheral edge side of this bent portion has an arc shape. As described above, the rectangular base 2 in a plan view has a larger deflection on the long side of the base than the short side of the base, and the amount of deflection in the central portion of the long side of the base is maximum. Therefore, the external connection terminal 10a , 10b, 10c, 10d do not preferably extend too much in the long side direction of the base. Therefore, in order to secure the solder bonding region, it is preferable to extend the tips of the external connection terminals 10a, 10b, 10c, and 10d long in the short side direction of the base.

4つの外部接続端子10a,10b,10c,10dのうち、外部端子10cには、図2に示すように、角部を面取り形状に切り欠いた切り欠き35が形成されている。この切り欠き35は、画像認識の際に、4つの外部接続端子10a,10b,10c,10dの方向性を識別するための目印として設けられているものである。
Of the four external connection terminals 10a, 10b, 10c, and 10d, the external terminal 10c is formed with a notch 35 having a chamfered corner as shown in FIG. The notch 35 is provided as a mark for identifying the directionality of the four external connection terminals 10a, 10b, 10c, and 10d during image recognition.

なお、上記実施形態では、温度センサ機能を有する電子部品素子としてサーミスタを用いた水晶振動子を例にして説明したが、温度センサ機能と発振回路を有するICを使用した表面実装型水晶発振器にも適用できる。 In the above embodiment, a crystal oscillator using a thermistor as an electronic component element having a temperature sensor function has been described as an example, but a surface-mounted crystal oscillator using an IC having a temperature sensor function and an oscillation circuit is also used. Applicable.

また、上述した本発明の実施形態では基板部の一主面側(下方)と他主面側(上方)の両面に枠部を形成した断面略H型のベースを例にして説明しているが、基板部の他主面側(上方)には枠部を形成せず、一主面側(下方)のみに枠部を形成したベースを用い、下側に凹部を有するキャップ形状の蓋を用い、他主面側(上方)に搭載された水晶振動素子を気密封止した構成としてもよい。 Further, in the above-described embodiment of the present invention, a base having a substantially H-shaped cross section in which frame portions are formed on both the main surface side (lower side) and the other main surface side (upper side) of the substrate portion is described as an example. However, a base is used in which a frame portion is not formed on the other main surface side (upper side) of the substrate portion and a frame portion is formed only on one main surface side (lower side), and a cap-shaped lid having a recess on the lower side is used. It may be used and the crystal vibrating element mounted on the other main surface side (upper side) may be hermetically sealed.

本発明は、その精神または主要な特徴から逸脱することなく、他のいろいろな形で実施することができる。そのため、上述の実施の形態はあらゆる点で単なる例示にすぎず、限定的に解釈してはならない。本発明の範囲は特許請求の範囲によって示すものであって、明細書本文には、なんら拘束されない。さらに、特許請求の範囲の均等範囲に属する変形や変更は、全て本発明の範囲内のものである。 The present invention can be practiced in various other ways without departing from its spirit or key features. Therefore, the above embodiments are merely exemplary in all respects and should not be construed in a limited way. The scope of the present invention is shown by the scope of claims, and is not bound by the text of the specification. Furthermore, all modifications and modifications that fall within the equivalent scope of the claims are within the scope of the present invention.

表面実装型圧電振動デバイスの量産に適用できる。 It can be applied to mass production of surface mount type piezoelectric vibration devices.

1 水晶振動子(表面実装型圧電振動デバイス)
2 ベース
2A 第1凹部
2B 第2凹部
20 基板部
200 外周部
201 一主面
202 他主面
21 第1枠部
210 外周部
211 内周部
22 第2枠部
220 外周部
221 内周部
3 水晶振動素子(圧電振動素子)
4 サーミスタ(電子部品素子)
5 蓋
6 封止部
7,7 水晶搭載用パッド
8 導電性接着剤
9a,9b,9c,9d 切り欠き部
10a,10b,10c,10d 外部接続端子
1 Crystal oscillator (surface mount type piezoelectric vibration device)
2 Base 2A 1st recess 2B 2nd recess 20 Board part 200 Outer circumference 201 1 Main surface 202 Other main surface 21 1st frame part 210 Outer circumference 211 Inner circumference 22 2nd frame 220 Outer circumference 221 Inner circumference 3 Crystal Vibration element (piezoelectric vibration element)
4 Thermistor (electronic component element)
5 Lid 6 Sealing part 7, 7 Crystal mounting pad 8 Conductive adhesive 9a, 9b, 9c, 9d Notch part 10a, 10b, 10c, 10d External connection terminal

Claims (4)

下方が一主面で上方が他主面となる平面視略矩形の基板部と、当該基板部の一主面の外周部から下方に伸びる第1枠部とからなるベース、
外周縁と内周縁とが平面視略矩形であり、その上面の4隅に外部接続端子が形成された第1枠部、
上記第1枠部と上記基板部の一主面とで囲まれた第1凹部に形成された複数の第1電極パッド、
上記複数の第1電極パッドに搭載され温度センサ機能を有する電子部品素子、
上記基板部の他主面に形成された複数の第2電極パッド、
上記複数の第2電極パッドに搭載される圧電振動素子、
上記圧電振動素子を気密封止する蓋、
とを具備しており、
上記圧電振動素子は、上記複数の第2電極パッドのうちの上記第1凹部と平面視重畳する領域内でのみ導電性接合材により接合されてなる
ことを特徴とする表面実装型圧電振動デバイス。
A base composed of a substantially rectangular substrate portion in a plan view in which the lower portion is one main surface and the upper portion is the other main surface, and a first frame portion extending downward from the outer peripheral portion of one main surface of the substrate portion.
The first frame portion, in which the outer peripheral edge and the inner peripheral edge are substantially rectangular in a plan view, and external connection terminals are formed at the four corners of the upper surface thereof.
A plurality of first electrode pads formed in a first recess surrounded by the first frame portion and one main surface of the substrate portion.
An electronic component element mounted on the plurality of first electrode pads and having a temperature sensor function.
A plurality of second electrode pads formed on the other main surface of the substrate portion,
Piezoelectric vibrating elements mounted on the plurality of second electrode pads,
A lid that airtightly seals the piezoelectric vibrating element,
And
The piezoelectric vibrating element is a surface mount type piezoelectric vibrating device characterized in that the piezoelectric vibrating element is joined by a conductive bonding material only in a region where the first concave portion of the plurality of second electrode pads overlaps in a plan view.
上記第1枠部の内周縁の重心と上記第1枠部の外周縁の重心が一致するとともに、上記第1枠部の内周縁の平面視面積が上記第1枠部の外周縁の平面視面積の1/3〜2/3の間で設定されてなる
ことを特徴とする特許請求項1記載の表面実装型圧電振動デバイス。
The center of gravity of the inner peripheral edge of the first frame portion coincides with the center of gravity of the outer peripheral edge of the first frame portion, and the plan view area of the inner peripheral edge of the first frame portion is the plan view of the outer peripheral edge of the first frame portion. The surface-mounted piezoelectric vibration device according to claim 1, wherein the surface-mounted piezoelectric vibration device is set between 1/3 and 2/3 of the area.
下方が一主面で上方が他主面となる平面視略矩形の基板部と、当該基板部の一主面の外周部から下方に伸びる第1枠部と、当該基板部の他主面の外周部から上方に伸びる第2枠部とからなるベース、
外周縁と内周縁とが平面視略矩形である第2枠部、
上記第2枠部と上記基板部の他主面とで囲まれた第2凹部に形成された複数の第2電極パッド、
とを具備しており、
上記第1凹部は上記第2凹部より平面視面積が小さく、かつ上記第2凹部の領域内部で平面視重畳するように形成されてなる
ことを特徴とする特許請求項1、または特許請求項2に記載の表面実装型圧電振動デバイス。
A board portion having a substantially rectangular plan view with one main surface at the bottom and another main surface at the top, a first frame portion extending downward from the outer peripheral portion of one main surface of the substrate portion, and the other main surface of the substrate portion. A base consisting of a second frame extending upward from the outer circumference,
The second frame portion, in which the outer peripheral edge and the inner peripheral edge are substantially rectangular in a plan view,
A plurality of second electrode pads formed in the second recess surrounded by the second frame portion and the other main surface of the substrate portion.
And
Claim 1 or claim 2 is characterized in that the first recess has a smaller plan view area than the second recess and is formed so as to overlap in a plan view inside the region of the second recess. The surface-mounted piezoelectric vibration device described in.
上記圧電振動素子は上記ベースと上記蓋により真空雰囲気内で気密封止されてなる
ことを特徴とする特許請求項1乃至3のうちのいずれか1項に記載の表面実装型圧電振動デバイス。
The surface-mounted piezoelectric vibration device according to any one of claims 1 to 3, wherein the piezoelectric vibration element is hermetically sealed in a vacuum atmosphere by the base and the lid.
JP2019145402A 2019-08-07 2019-08-07 Surface mounting type piezoelectric vibration device Pending JP2021027510A (en)

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JP2013219539A (en) * 2012-04-09 2013-10-24 Nippon Dempa Kogyo Co Ltd Temperature compensation type piezoelectric oscillator
JP2015091103A (en) * 2013-11-07 2015-05-11 京セラクリスタルデバイス株式会社 Temperature compensation type crystal oscillator
JP2015226308A (en) * 2014-05-30 2015-12-14 日本電波工業株式会社 Crystal oscillator
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