JP2021027413A - Crystal element, crystal device, and electronic apparatus - Google Patents

Crystal element, crystal device, and electronic apparatus Download PDF

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JP2021027413A
JP2021027413A JP2019141707A JP2019141707A JP2021027413A JP 2021027413 A JP2021027413 A JP 2021027413A JP 2019141707 A JP2019141707 A JP 2019141707A JP 2019141707 A JP2019141707 A JP 2019141707A JP 2021027413 A JP2021027413 A JP 2021027413A
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crystal
crystal element
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main surface
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JP7308092B2 (en
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雅俊 湯村
Masatoshi Yumura
雅俊 湯村
斉師 吉田
Hitoshi Yoshida
斉師 吉田
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Kyocera Corp
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Abstract

To provide a crystal element that can improve electrical characteristics by reducing the influence of vibration reflected on m surfaces.SOLUTION: A crystal piece 12 is substantially a rectangle composed of long sides 11a, 11b and short sides 11c, 11d in plan view, and has two principal surfaces 13e, 13f opposite to each other and side faces 13a, 13b, 13c, 13d sandwiched between the two principal surfaces 13e, 13f. Excitation electrodes 14e, 14f are located on the principal surfaces 13e, 13f at their centers. Connection electrodes 14a, 14b are located on the principal surfaces 13e, 13f at their circumferential edges. Wiring electrodes 14g, 14h electrically connect the connection electrodes 14a, 14b with the excitation electrodes 14e, 14f. Vibration reduction patterns 15e, 15f are located on sides in contact with m surfaces 16a, 16b of the principal surfaces 13e, 13f and extend along the long sides 11a, 11b.SELECTED DRAWING: Figure 1

Description

本開示は、水晶素子、水晶素子を備えた水晶デバイス、及び、水晶デバイスを備えた電子機器に関する。水晶デバイスとしては、例えば水晶振動子又は水晶発振器などが挙げられる。 The present disclosure relates to a crystal element, a crystal device including a crystal element, and an electronic device including the crystal device. Examples of the crystal device include a crystal oscillator or a crystal oscillator.

厚みすべり振動モードの水晶素子は、ＡＴカットの水晶片の両主面に、金属膜パターンからなる励振電極を形成したものである。この種の水晶素子として、水晶片の側面に結晶面であるｍ面を有するもの（以下「関連技術１」という。）が知られている（例えば特許文献１の図３参照）。 The quartz element in the thickness sliding vibration mode has excitation electrodes formed of a metal film pattern formed on both main surfaces of an AT-cut quartz piece. As a crystal element of this type, one having an m-plane which is a crystal plane on the side surface of the crystal piece (hereinafter referred to as "related technology 1") is known (see, for example, FIG. 3 of Patent Document 1).

水晶デバイスは、水晶素子の圧電効果及び逆圧電効果を利用して、特定の発振周波数を発生させる。一般的な水晶デバイスは、パッケージ内に水晶素子を収容し、これを蓋体によって気密封止した構造である（例えば特許文献１の図１参照）。 The crystal device utilizes the piezoelectric effect and the inverse piezoelectric effect of the crystal element to generate a specific oscillation frequency. A general crystal device has a structure in which a crystal element is housed in a package and the crystal element is hermetically sealed by a lid (see, for example, FIG. 1 of Patent Document 1).

特開２０１５−２１１３６２号公報JP-A-2015-21362

上述の水晶素子では、水晶片の側面で反射する振動が励振電極での主振動に影響しないように、水晶片の側面から励振電極までの距離を所定値に設定している。しかしながら、関連技術１では、側面の一部であるｍ面が主面に対して斜めになっているので、ｍ面で反射する振動が複雑な経路で伝搬することになる。そのため、ｍ面で反射する振動が励振電極に到達して、主振動を阻害したり、主振動に結合したりすることがある。その結果、関連技術１では、水晶素子の等価直列抵抗値の増加、周波数温度特性の劣化など、電気的特性の低下を招いていた。 In the above-mentioned crystal element, the distance from the side surface of the crystal piece to the excitation electrode is set to a predetermined value so that the vibration reflected by the side surface of the crystal piece does not affect the main vibration at the excitation electrode. However, in the related technique 1, since the m-plane, which is a part of the side surface, is oblique to the main surface, the vibration reflected by the m-plane propagates in a complicated path. Therefore, the vibration reflected on the m-plane may reach the excitation electrode, hinder the main vibration, or be coupled to the main vibration. As a result, in the related technique 1, the electrical characteristics are deteriorated, such as an increase in the equivalent series resistance value of the crystal element and deterioration of the frequency temperature characteristics.

そこで、本開示の目的は、ｍ面で反射する振動の影響を低減することにより、電気的特性を向上し得る水晶素子を提供することにある。 Therefore, an object of the present disclosure is to provide a quartz element capable of improving electrical characteristics by reducing the influence of vibration reflected on the m-plane.

本開示に係る水晶素子は、
平面視して長辺及び短辺からなる略矩形であり、互いに向かい合う二つの主面及び前記二つの主面に挟まれた側面を有する水晶片と、
前記主面においてその中央に位置する励振電極と、
前記主面においてその周縁に位置する接続電極と、
前記接続電極と前記励振電極とを電気的に繋ぐ配線電極と、
前記長辺を含む前記側面の一部であり、前記長辺に沿って延びる結晶面であるｍ面と、
前記主面の前記ｍ面に接する側及び前記ｍ面の少なくとも一方に位置し、前記長辺に沿って延びる振動抑制パターンと、
を備えたものである。 The crystal element according to the present disclosure is
A crystal piece that is a substantially rectangular shape consisting of a long side and a short side when viewed in a plan view, and has two main surfaces facing each other and a side surface sandwiched between the two main surfaces.
The excitation electrode located at the center of the main surface,
A connection electrode located on the periphery of the main surface and
A wiring electrode that electrically connects the connection electrode and the excitation electrode,
The m-plane, which is a part of the side surface including the long side and is a crystal plane extending along the long side,
A vibration suppression pattern located on at least one of the main surface in contact with the m surface and the m surface and extending along the long side.
It is equipped with.

本開示に係る水晶デバイスは本開示に係る水晶素子を備えたものであり、本開示に係る電子機器は本開示に係る水晶デバイスを備えたものである。 The crystal device according to the present disclosure is provided with the crystal element according to the present disclosure, and the electronic device according to the present disclosure is provided with the crystal device according to the present disclosure.

本開示に係る水晶素子によれば、主面のｍ面に接する側及びｍ面の少なくとも一方に位置し、長辺に沿って延びる振動抑制パターンを備えたことにより、ｍ面への振動の伝搬及びｍ面からの振動の反射を抑制できるので、電気的特性を向上できる。 According to the crystal element according to the present disclosure, the vibration propagation to the m-plane is provided by providing a vibration suppression pattern that is located on at least one of the m-plane and the side in contact with the m-plane of the main surface and extends along the long side. And since the reflection of vibration from the m-plane can be suppressed, the electrical characteristics can be improved.

図１［Ａ］は実施形態１の水晶素子を示す斜視図、図１［Ｂ］は図１［Ａ］におけるＩｂ−Ｉｂ線拡大断面図である。FIG. 1 [A] is a perspective view showing the crystal element of the first embodiment, and FIG. 1 [B] is an enlarged sectional view taken along line Ib-Ib in FIG. 1 [A]. 図２［Ａ］は実施形態１の水晶素子の表側を示す平面図、図２［Ｂ］は実施形態１の水晶素子の裏側を示す平面透視図である。FIG. 2 [A] is a plan view showing the front side of the crystal element of the first embodiment, and FIG. 2 [B] is a plan perspective view showing the back side of the crystal element of the first embodiment. 図３［Ａ］は実施形態２の水晶素子の表側を示す平面図、図３［Ｂ］は実施形態２の水晶素子の裏側を示す平面透視図である。FIG. 3 [A] is a plan view showing the front side of the crystal element of the second embodiment, and FIG. 3 [B] is a plan perspective view showing the back side of the crystal element of the second embodiment. 図４［Ａ］は実施形態３の水晶素子の表側を示す平面図、図４［Ｂ］は実施形態３の水晶素子の裏側を示す平面透視図である。FIG. 4A is a plan view showing the front side of the crystal element of the third embodiment, and FIG. 4B is a plan perspective view showing the back side of the crystal element of the third embodiment. 図５［Ａ］は実施形態４の水晶素子の表側を示す平面図、図５［Ｂ］は実施形態４の水晶素子の裏側を示す平面透視図である。FIG. 5 [A] is a plan view showing the front side of the crystal element of the fourth embodiment, and FIG. 5 [B] is a plan perspective view showing the back side of the crystal element of the fourth embodiment. 図６［Ａ］は実施形態５の水晶デバイスを示す斜視図であり、図６［Ｂ］は図６［Ａ］におけるVIｂ−VIｂ線断面図である。6 [A] is a perspective view showing the crystal device of the fifth embodiment, and FIG. 6 [B] is a sectional view taken along line VIb-VIb in FIG. 6 [A]. 図７［Ａ］は実施形態６の電子機器の第一例を示す正面図であり、図７［Ｂ］は実施形態６の電子機器の第二例を示す正面図である。FIG. 7A is a front view showing a first example of the electronic device of the sixth embodiment, and FIG. 7B is a front view showing a second example of the electronic device of the sixth embodiment.

以下、添付図面を参照しながら、本開示を実施するための形態（以下「実施形態」という。）について説明する。なお、本明細書及び図面において、実質的に同一の構成要素については同一の符号を用いることにより適宜説明を省略する。図面に描かれた形状は、当業者が理解しやすいように描かれているため、実際の寸法及び比率とは必ずしも一致していない。平面透視図では、表側から水晶片を透視して、裏側の電極を見た状態を示している。 Hereinafter, embodiments for carrying out the present disclosure (hereinafter referred to as “embodiments”) will be described with reference to the accompanying drawings. In the present specification and the drawings, substantially the same components will be appropriately described by using the same reference numerals. The shapes drawn in the drawings are drawn for those skilled in the art to be easily understood, and therefore do not always match the actual dimensions and ratios. In the plan perspective view, the crystal piece is seen through from the front side, and the electrode on the back side is seen.

＜実施形態１＞
図１及び図２に示すように、本実施形態１の水晶素子１０は、水晶片１２と、励振電極１４ｅ，１４ｆと、接続電極１４ａ，１４ｂと、配線電極１４ｇ，１４ｈと、ｍ面１６ａ，１６ｂと、振動抑制パターン１５ｅ，１５ｆと、備えたものである。 <Embodiment 1>
As shown in FIGS. 1 and 2, the crystal element 10 of the first embodiment includes a crystal piece 12, excitation electrodes 14e and 14f, connection electrodes 14a and 14b, wiring electrodes 14g and 14h, and m-plane 16a, It is provided with 16b and vibration suppression patterns 15e and 15f.

水晶片１２は、平面視して長辺１１ａ，１１ｂ及び短辺１１ｃ，１１ｄからなる略矩形であり、互いに向かい合う二つの主面１３ｅ，１３ｆと、二つの主面１３ｅ，１３ｆに挟まれた側面１３ａ，１３ｂ，１３ｃ，１３ｄと、を有する。励振電極１４ｅ，１４ｆは、主面１３ｅ，１３ｆにおいてその中央に位置する。接続電極１４ａ，１４ｂは、主面１３ｅ，１３ｆにおいてその周縁に位置する。配線電極１４ｇ，１４ｈは、接続電極１４ａ，１４ｂと励振電極１４ｅ，１４ｆとを電気的に繋いでいる。振動抑制パターン１５ｅ，１５ｆは、主面１３ｅ，１３ｆのｍ面１６ａ，１６ｂに接する側に位置し、長辺１１ａ，１１ｂに沿って延びている。 The crystal piece 12 is a substantially rectangular shape composed of long sides 11a and 11b and short sides 11c and 11d in a plan view, and side surfaces sandwiched between two main surfaces 13e and 13f facing each other and two main surfaces 13e and 13f. It has 13a, 13b, 13c, and 13d. The excitation electrodes 14e and 14f are located at the center of the main surfaces 13e and 13f. The connection electrodes 14a and 14b are located on the peripheral surfaces of the main surfaces 13e and 13f. The wiring electrodes 14g and 14h electrically connect the connection electrodes 14a and 14b and the excitation electrodes 14e and 14f. The vibration suppression patterns 15e and 15f are located on the sides of the main surfaces 13e and 13f in contact with the m surfaces 16a and 16b, and extend along the long sides 11a and 11b.

振動抑制パターン１５ｅ，１５ｆは、励振電極１４ｅ，１４ｆ等と同じ金属膜からなり、励振電極１４ｅ，１４ｆ等と同時に形成される。また、振動抑制パターン１５ｅ，１５ｆは、どの電極にも接続されておらず、電気的に浮いている（フローティング）。 The vibration suppression patterns 15e and 15f are made of the same metal film as the excitation electrodes 14e and 14f, and are formed at the same time as the excitation electrodes 14e and 14f. Further, the vibration suppression patterns 15e and 15f are not connected to any of the electrodes and are electrically floating (floating).

振動抑制パターン１５ｅ，１５ｆは、次のようにしてもよい。振動抑制パターン１５ｅ，１５ｆの形成位置は、主面１３ｅ，１３ｆのｍ面１６ａ，１６ｂに接する側に限らず、ｍ面１６ａ，１６ｂでもよいし、主面１３ｅ，１３ｆのｍ面１６ａ，１６ｂに接する側及びｍ面１６ａ，１６ｂの両方でもよい。振動抑制パターン１５ｅの平面形状は、側面１３ａに沿った直線状に限らず、側面１３ａ，１３ｂに沿ったニの字状にしてもよいし、側面１３ａ，１３ｄに沿ったＬ字状にしてもよいし、側面１３ａ，１３ｂ，１３ｄに沿ったコの字状などにしてもよい。振動抑制パターン１５ｆの平面形状についても同様である。主面１３ｅに位置する振動抑制パターン１５ｅと主面１３ｆに位置する振動抑制パターン１５ｆとは、平面透視して互いに重ならない部分に形成されているが、平面透視して互いに重なる部分に形成してもよい。つまり、主面１３ｅに位置する振動抑制パターン１５ｅと主面１３ｆに位置する振動抑制パターン１５ｆとで、水晶片１２の周縁を挟むようにしてもよい。材質は、金属膜に限らず、例えばシリコン酸化膜、シリコン窒化膜などの絶縁膜としてもよい。 The vibration suppression patterns 15e and 15f may be as follows. The vibration suppression patterns 15e and 15f are formed not only on the sides of the main surfaces 13e and 13f in contact with the m surfaces 16a and 16b, but also on the m surfaces 16a and 16b and on the m surfaces 16a and 16b of the main surfaces 13e and 13f. Both the tangent side and the m-planes 16a and 16b may be used. The planar shape of the vibration suppression pattern 15e is not limited to a straight line along the side surfaces 13a, but may be a D shape along the side surfaces 13a and 13b, or an L shape along the side surfaces 13a and 13d. Alternatively, it may have a U-shape along the side surfaces 13a, 13b, 13d. The same applies to the planar shape of the vibration suppression pattern 15f. The vibration suppression pattern 15e located on the main surface 13e and the vibration suppression pattern 15f located on the main surface 13f are formed in a portion that does not overlap with each other through a plane perspective, but are formed at a portion that overlaps with each other through a plane perspective. May be good. That is, the peripheral edge of the crystal piece 12 may be sandwiched between the vibration suppression pattern 15e located on the main surface 13e and the vibration suppression pattern 15f located on the main surface 13f. The material is not limited to the metal film, and may be, for example, an insulating film such as a silicon oxide film or a silicon nitride film.

長辺１１ａ，１１ｂを含む二つの側面１３ａ，１３ｂは、水晶片１２の厚み方向（Ｙ’軸方向）に斜めとなるｍ面１６ａ，１６ｂと、水晶片１２の厚み方向に略平行となる垂直面１７ａ，１７ｂとを有する。ｍ面１６ａ，１６ｂは結晶面のｍ面であり、垂直面１７ａ，１７ｂは結晶面のＲ面に直角な面を含む。換言すると、ｍ面１６ａ，１６ｂは主面１３ｅ，１３ｆに対して斜めであり、垂直面１７ａ，１７ｂは主面１３ｅ，１３ｆに対して略垂直である。 The two side surfaces 13a and 13b including the long sides 11a and 11b are perpendicular to the m-planes 16a and 16b oblique in the thickness direction (Y'axis direction) of the crystal piece 12 and substantially parallel to the thickness direction of the crystal piece 12. It has surfaces 17a and 17b. The m-planes 16a and 16b are the m-planes of the crystal plane, and the vertical planes 17a and 17b include planes perpendicular to the R-plane of the crystal plane. In other words, the m-planes 16a and 16b are oblique to the main surfaces 13e and 13f, and the vertical surfaces 17a and 17b are substantially perpendicular to the main surfaces 13e and 13f.

次に、水晶素子１０について更に詳しく説明する。 Next, the crystal element 10 will be described in more detail.

水晶片１２は、ＡＴカット水晶板である。すなわち、水晶において、Ｘ軸（電気軸）、Ｙ軸（機械軸）及びＺ軸（光軸）からなる直交座標系ＸＹＺを、Ｘ軸回りに３０°以上かつ５０°以下（一例として、３５°１５′）回転させて直交座標系ＸＹ’Ｚ’を定義したとき、ＸＺ’平面に平行に切り出されたウェハが水晶片１２の原材料となる。そして、長辺１１ａ，１１ｂがＸ軸に平行、短辺１１ｃ，１１ｄがＺ’軸に平行、厚み方向がＹ’軸に平行である。水晶片１２の外形寸法を例示すれば、長辺１１ａ，１１ｂは６５０〜９２０μｍ、短辺１１ｃ，１１ｄは５５０〜６９０μｍ、厚みは発振周波数に応じて異なる。例えば、発振周波数が１００ＭＨｚ以上の場合は、励振電極１４ｅ，１４ｆが位置する部分の水晶片１２の厚みは１７μｍ以下である。 The crystal piece 12 is an AT-cut crystal plate. That is, in the crystal, the Cartesian coordinate system XYZ consisting of the X-axis (electric axis), the Y-axis (mechanical axis), and the Z-axis (optical axis) is 30 ° or more and 50 ° or less (for example, 35 °) around the X-axis. 15') When the Cartesian coordinate system XY'Z'is defined by rotation, the wafer cut out parallel to the XZ' plane becomes the raw material of the crystal piece 12. The long sides 11a and 11b are parallel to the X axis, the short sides 11c and 11d are parallel to the Z'axis, and the thickness direction is parallel to the Y'axis. For example, the external dimensions of the crystal piece 12 are 650 to 920 μm for the long sides 11a and 11b, 550 to 690 μm for the short sides 11c and 11d, and the thickness varies depending on the oscillation frequency. For example, when the oscillation frequency is 100 MHz or more, the thickness of the crystal piece 12 at the portion where the excitation electrodes 14e and 14f are located is 17 μm or less.

一対の励振電極１４ｅ，１４ｆは、平面視して略矩形であり、両主面１３ｅ，１３ｆのそれぞれ略中央に設けられている。励振電極１４ｅ，１４ｆからは、励振に寄与しない配線電極１４ｇ，１４ｈが、長辺１１ａ，１１ｂに沿って短辺１１ｃの接続電極１４ａ，１４ｂまで延びている。つまり、接続電極１４ａは配線電極１４ｇを介して励振電極１４ｅに導通し、接続電極１４ｂは配線電極１４ｈを介して励振電極１４ｆに導通している。なお、励振電極１４ｅ，１４ｆは、略矩形に限らず、例えば略円形又は略楕円形などであってもよい。 The pair of excitation electrodes 14e and 14f are substantially rectangular in a plan view, and are provided at substantially the center of both main surfaces 13e and 13f, respectively. From the excitation electrodes 14e and 14f, wiring electrodes 14g and 14h that do not contribute to excitation extend along the long sides 11a and 11b to the connection electrodes 14a and 14b on the short sides 11c. That is, the connection electrode 14a conducts to the excitation electrode 14e via the wiring electrode 14g, and the connection electrode 14b conducts to the excitation electrode 14f via the wiring electrode 14h. The excitation electrodes 14e and 14f are not limited to a substantially rectangular shape, and may be, for example, a substantially circular shape or a substantially elliptical shape.

励振電極１４ｅ，１４ｆは、例えばクロム（Ｃｒ）からなる下地層と、金（Ａｕ）からなる導体層と、の積層体を成している。つまり、水晶片１２上に下地層が位置し、下地層上に導体層が位置している。下地層は、主に水晶片１２との密着力を得る役割を果たす。導体層は、主に電気的導通を得る役割を果たす。接続電極１４ａ，１４ｂ及び配線電極１４ｇ，１４ｈも、励振電極１４ｅ，１４ｆと同様に、下地層と導体層との積層体としてもよい。 The excitation electrodes 14e and 14f form a laminate of, for example, a base layer made of chromium (Cr) and a conductor layer made of gold (Au). That is, the base layer is located on the crystal piece 12, and the conductor layer is located on the base layer. The base layer mainly plays a role of obtaining an adhesion force with the crystal piece 12. The conductor layer mainly serves to obtain electrical continuity. The connection electrodes 14a and 14b and the wiring electrodes 14g and 14h may also be a laminate of the base layer and the conductor layer, similarly to the excitation electrodes 14e and 14f.

励振電極１４ｅ，１４ｆ等の製造工程としては、水晶片１２に成膜後にフォトレジストパターンを形成してエッチングする方法、水晶片１２にフォトレジストパターンを形成後に成膜してリフトオフする方法、又は、水晶片１２をメタルマスクで覆い成膜する方法などが挙げられる。成膜には、スパッタ又は蒸着などが用いられる。 The manufacturing process of the excitation electrodes 14e, 14f, etc. includes a method of forming a photoresist pattern on the crystal piece 12 after forming a film and etching, a method of forming a photoresist pattern on the crystal piece 12 and then forming a film, and lifting off. Examples thereof include a method of covering the crystal piece 12 with a metal mask to form a film. Sputtering or thin film deposition is used for film formation.

ｍ面１６ａ，１６ｂ及び垂直面１７ａ，１７ｂは、ウェットエッチング時（外形加工工程）に主面１３ｅのマスク（耐食膜）と主面１３ｆのマスク（耐食膜）とをＺ’軸方向に少しずらすことによって得られる。 For the m-planes 16a and 16b and the vertical surfaces 17a and 17b, the mask (corrosion-resistant film) of the main surface 13e and the mask (corrosion-resistant film) of the main surface 13f are slightly displaced in the Z'axis direction during wet etching (outer shape processing process). Obtained by

水晶素子１０は、例えば、フォトリソグラフィ技術とエッチング技術とを用いて次のように製造することができる。 The crystal element 10 can be manufactured as follows by using, for example, a photolithography technique and an etching technique.

まず、ＡＴカットの水晶ウェハ全面に耐食膜を設け、その上にフォトレジストを設ける。続いて、そのフォトレジストの上に水晶片１２のパターンが描かれたマスクを重ね、露光及び現像をすることにより一部の耐食膜を露出させ、この状態で耐食膜に対するウェットエッチングをする。その後、残った耐食膜をマスクにして、水晶ウェハに対してウェットエッチングをすることにより、水晶片１２の外形を形成する（外形加工工程）。 First, a corrosion-resistant film is provided on the entire surface of the AT-cut crystal wafer, and a photoresist is provided on the film. Subsequently, a mask on which the pattern of the crystal piece 12 is drawn is placed on the photoresist to expose a part of the corrosion-resistant film by exposure and development, and in this state, wet etching is performed on the corrosion-resistant film. After that, the outer shape of the crystal piece 12 is formed by performing wet etching on the crystal wafer using the remaining corrosion-resistant film as a mask (outer shape processing step).

その後、残った耐食膜を水晶ウェハから除去し、励振電極１４ｅ，１４ｆ等となる金属膜を水晶ウェハ全面に設ける。続いて、励振電極１４ｅ，１４ｆ等のパターンからなるフォトレジストマスクを金属膜上に形成し、不要な金属膜をエッチングによって除去することにより、下地層及び導体層からなる励振電極１４ｅ，１４ｆ等を形成する。その後、不要なフォトレジストを除去することにより、水晶ウェハに複数の水晶素子１０を形成する。最後に、この水晶ウェハから各水晶素子１０に個片化することで、単体の水晶素子１０が得られる。 After that, the remaining corrosion-resistant film is removed from the crystal wafer, and metal films serving as excitation electrodes 14e, 14f and the like are provided on the entire surface of the crystal wafer. Subsequently, a photoresist mask composed of patterns such as excitation electrodes 14e and 14f is formed on the metal film, and unnecessary metal films are removed by etching to remove the excitation electrodes 14e and 14f composed of the base layer and the conductor layer. Form. After that, a plurality of crystal elements 10 are formed on the crystal wafer by removing unnecessary photoresist. Finally, the crystal wafer is separated into individual crystal elements 10 to obtain a single crystal element 10.

水晶素子１０の動作は次のとおりである。励振電極１４ｅ，１４ｆを介して、水晶片１２に交番電圧を印加する。すると、水晶片１２は、両主面１３ｅ，１３ｆが互いにずれるように厚みすべり振動を起こし、特定の発振周波数を発生させる。このように、水晶素子１０は、水晶片１２の圧電効果及び逆圧電効果を利用して、一定の発振周波数の信号を出力するように動作する。このとき、励振電極１４ｅ，１４ｆ間の水晶片１２の板厚が薄いほど、高い発振周波数となる。 The operation of the crystal element 10 is as follows. An alternating voltage is applied to the crystal piece 12 via the excitation electrodes 14e and 14f. Then, the crystal piece 12 causes a thickness sliding vibration so that both main surfaces 13e and 13f are displaced from each other, and generates a specific oscillation frequency. In this way, the crystal element 10 operates so as to output a signal having a constant oscillation frequency by utilizing the piezoelectric effect and the inverse piezoelectric effect of the crystal piece 12. At this time, the thinner the crystal piece 12 between the excitation electrodes 14e and 14f, the higher the oscillation frequency.

次に、水晶素子１０の作用及び効果について説明する。 Next, the action and effect of the crystal element 10 will be described.

ｍ面１６ａ，１６ｂで反射した振動は、近傍の振動抑制パターン１５ｅ，１５ｆが錘となることにより減衰する。そのため、ｍ面１６ａ，１６ｂで反射する振動が励振電極１４ｅ，１４ｆに到達して、主振動を阻害したり主振動に結合したりすることを、抑えられる。その結果、関連技術１と比較して、等価直列抵抗値の低減、及び、周波数温度特性の向上などを達成できる。よって、水晶素子１０によれば、主面１３ｅ，１３ｆのｍ面１６ａ，１６ｂに接する側及びｍ面１６ａ，１６ｂの少なくとも一方に位置し、長辺１１ａ，１１ｂに沿って延びる振動抑制パターン１５ｅ，１５ｆを備えたことにより、ｍ面１６ａ，１６ｂへの振動の伝搬及びｍ面１６ａ，１６ｂからの振動の反射を抑制できるので、電気的特性を向上できる。 The vibration reflected by the m-planes 16a and 16b is attenuated by the vibration suppression patterns 15e and 15f in the vicinity acting as weights. Therefore, it is possible to prevent the vibration reflected by the m-planes 16a and 16b from reaching the excitation electrodes 14e and 14f and inhibiting the main vibration or coupling with the main vibration. As a result, it is possible to reduce the equivalent series resistance value and improve the frequency temperature characteristic as compared with the related technique 1. Therefore, according to the crystal element 10, the vibration suppression patterns 15e, which are located on the main surfaces 13e and 13f in contact with the m-planes 16a and 16b and at least one of the m-planes 16a and 16b and extend along the long sides 11a and 11b, By providing 15f, it is possible to suppress the propagation of vibration to the m-planes 16a and 16b and the reflection of the vibration from the m-planes 16a and 16b, so that the electrical characteristics can be improved.

また、長辺１１ａ，１１ｂを含む二つの側面１３ａ，１３ｂが、水晶片１２の厚み方向（Ｙ’軸方向）に斜めとなるｍ面１６ａ，１６ｂと、水晶片１２の厚み方向に略平行となる垂直面１７ａ，１７ｂとを有することにより、換言すると、結晶面のｍ面であるｍ面１６ａ，１６ｂと、結晶面のＲ面に直角な面を含む垂直面１７ａ，１７ｂと、を備えたことにより、両端部（両側面１３ａ，１３ｂ）が実質的に薄くなる。よって、両端部（両側面１３ａ，１３ｂ）での振動変位が大きく減衰するため、振動エネルギの閉じ込め効果によって、ＣＩ（クリスタルインピーダンス）値を低減できる。この効果により、いわゆるコンベックス形状、ベベル形状又はメサ型などの構造を採らなくてもよくなるので、製造工程を簡素化できる。この効果は、水晶片１２の厚み方向（Ｙ’軸方向）においてｍ面１６ａ，１６ｂの厚みと垂直面１７ａ，１７ｂの厚みとが等しくなる場合に、最も大きくなる。このとき、図１［Ｂ］に示すように、水晶片１２の重心に対して左右が点対称となることにより、水晶片１２の上半分と下半分とで振動の状態が同じになるので、振動バランスを向上できる。これに加え、水晶素子１０によれば、前述したように振動抑制パターン１５ｅ，１５ｆによって等価直列抵抗値を低減できるので、上記振動エネルギの閉じ込め効果と相俟ってよりＣＩ値をより低減できる。 Further, the two side surfaces 13a and 13b including the long sides 11a and 11b are substantially parallel to the m-planes 16a and 16b that are oblique in the thickness direction (Y'axis direction) of the crystal piece 12 and the thickness direction of the crystal piece 12. By having the vertical planes 17a and 17b, in other words, the m planes 16a and 16b which are the m planes of the crystal plane and the vertical planes 17a and 17b including the planes perpendicular to the R plane of the crystal plane are provided. As a result, both end portions (both side surfaces 13a and 13b) are substantially thinned. Therefore, since the vibration displacement at both ends (both sides 13a and 13b) is greatly attenuated, the CI (crystal impedance) value can be reduced by the effect of confining the vibration energy. Due to this effect, it is not necessary to adopt a structure such as a so-called convex shape, bevel shape or mesa shape, so that the manufacturing process can be simplified. This effect is maximized when the thicknesses of the m-planes 16a and 16b and the thicknesses of the vertical surfaces 17a and 17b are equal in the thickness direction (Y'axis direction) of the crystal piece 12. At this time, as shown in FIG. 1 [B], the left and right sides are point-symmetrical with respect to the center of gravity of the crystal piece 12, so that the upper half and the lower half of the crystal piece 12 have the same vibration state. The vibration balance can be improved. In addition to this, according to the crystal element 10, since the equivalent series resistance value can be reduced by the vibration suppression patterns 15e and 15f as described above, the CI value can be further reduced in combination with the confinement effect of the vibration energy.

＜実施形態２＞
図３に示すように、本実施形態２の水晶素子２０は、次の点で実施形態１と異なる。振動抑制パターン２５ｅ，２５ｆは、主面１３ｅ，１３ｆのｍ面１６ａ，１６ｂに接する側及びｍ面１６ａ，１６ｂの両方に位置する。つまり、振動抑制パターン２５ｅ，２５ｆは、主面１３ｅ，１３ｆのｍ面１６ａ，１６ｂに接する側及びｍ面１６ａ，１６ｂの両方に跨って、長辺１１ａ，１１ｂに沿って直線状に延びている。 <Embodiment 2>
As shown in FIG. 3, the crystal element 20 of the second embodiment differs from the first embodiment in the following points. The vibration suppression patterns 25e and 25f are located on both the main surfaces 13e and 13f on the side in contact with the m-planes 16a and 16b and on the m-planes 16a and 16b. That is, the vibration suppression patterns 25e and 25f extend linearly along the long sides 11a and 11b across both the sides of the main surfaces 13e and 13f in contact with the m surfaces 16a and 16b and the m surfaces 16a and 16b. ..

水晶素子２０によれば、錘の機能を果たす振動抑制パターン２５ｅ，２５ｆを、ｍ面１６ａ，１６ｂ上にも直接形成したので、ｍ面１６ａ，１６ｂへの振動の伝搬及びｍ面１６ａ，１６ｂからの振動の反射をより抑制できる。水晶素子２０の斜視図及び断面図は、図１に準ずる。本実施形態２のその他の構成、作用及び効果は、実施形態１のそれらと同様である。 According to the crystal element 20, the vibration suppression patterns 25e and 25f that function as weights are directly formed on the m-planes 16a and 16b, so that the vibration propagates to the m-planes 16a and 16b and from the m-planes 16a and 16b. The reflection of vibration can be further suppressed. The perspective view and the cross-sectional view of the crystal element 20 conform to FIG. Other configurations, actions and effects of the second embodiment are similar to those of the first embodiment.

＜実施形態３＞
図４に示すように、本実施形態３の水晶素子３０は、次の点で実施形態１と異なる。接続電極３４ａ，３４ｂは、主面１３ｅ，１３ｆの周縁において短辺１１ｃ側に位置する。配線電極３４ｇ，３４ｈの一部は、主面１３ｅ，１３ｆのｍ面１６ａ，１６ｂに接する側及びｍ面１６ａ，１６ｂの少なくとも一方に位置し、接続電極３４ａ，３４ｂから長辺１１ａ，１１ｂに沿って延び振動抑制パターン３５ｅ，３５ｆに繋がっている。振動抑制パターン３５ｅ，３５ｆは、配線電極３４ｇ，３４ｈに一体化され電気的に接続されている。 <Embodiment 3>
As shown in FIG. 4, the crystal element 30 of the third embodiment differs from the first embodiment in the following points. The connection electrodes 34a and 34b are located on the short side 11c side on the peripheral edges of the main surfaces 13e and 13f. A part of the wiring electrodes 34g and 34h is located on the side of the main surfaces 13e and 13f in contact with the m-planes 16a and 16b and at least one of the m-planes 16a and 16b, along the long sides 11a and 11b from the connection electrodes 34a and 34b. It extends and is connected to the vibration suppression patterns 35e and 35f. The vibration suppression patterns 35e and 35f are integrated with the wiring electrodes 34g and 34h and electrically connected to each other.

本実施形態３では、接続電極３４ａ，３４ｂから配線電極３４ｇ，３４ｈを経て振動抑制パターン３５ｅ，３５ｆまで、隙間なく一体化された状態で、主面１３ｅ，１３ｆのｍ面１６ａ，１６ｂに接する側及びｍ面１６ａ，１６ｂの少なくとも一方に位置している。そのため、水晶素子３０によれば、ｍ面１６ａ，１６ｂへの振動の伝搬及びｍ面１６ａ，１６ｂからの振動の反射をより抑制できる。水晶素子３０の斜視図及び断面図は、図１に準ずる。本実施形態３のその他の構成、作用及び効果は、実施形態１のそれらと同様である。 In the third embodiment, the sides of the main surfaces 13e and 13f in contact with the m surfaces 16a and 16b are integrated from the connection electrodes 34a and 34b through the wiring electrodes 34g and 34h to the vibration suppression patterns 35e and 35f without any gaps. It is located on at least one of the m-planes 16a and 16b. Therefore, according to the crystal element 30, the propagation of vibration to the m-planes 16a and 16b and the reflection of the vibration from the m-planes 16a and 16b can be further suppressed. The perspective view and the cross-sectional view of the crystal element 30 conform to FIG. Other configurations, actions and effects of the third embodiment are similar to those of the first embodiment.

＜実施形態４＞
図５に示すように、本実施形態４の水晶素子４０は、次の点で実施形態１と異なる。接続電極４４ａ，４４ｂは、主面１３ｅ，１３ｆの周縁において一方の短辺１１ｃ側に位置する。配線電極４４ｇ，４４ｈの一部は、主面１３ｅ，１３ｆのｍ面１６ａ，１６ｂに接する側及びｍ面１６ａ，１６ｂの少なくとも一方に位置し、振動抑制パターン４５ｅ，４５ｆと並んでかつ接して接続電極４４ａ，４４ｂから長辺１１ａ，１１ｂに沿って延び、他方の短辺１１ｄ側で励振電極１４ｅ，１４ｆに繋がっている。振動抑制パターン４５ｅ，４５ｆは、配線電極４４ｇ，４４ｈに一体化され電気的に接続されている。 <Embodiment 4>
As shown in FIG. 5, the crystal element 40 of the fourth embodiment is different from the first embodiment in the following points. The connection electrodes 44a and 44b are located on the one short side 11c side on the peripheral edge of the main surfaces 13e and 13f. A part of the wiring electrodes 44g and 44h is located on the side of the main surfaces 13e and 13f in contact with the m-planes 16a and 16b and at least one of the m-planes 16a and 16b, and is connected in line with and in contact with the vibration suppression patterns 45e and 45f. It extends from the electrodes 44a and 44b along the long sides 11a and 11b, and is connected to the excitation electrodes 14e and 14f on the other short side 11d side. The vibration suppression patterns 45e and 45f are integrated with the wiring electrodes 44g and 44h and electrically connected to each other.

水晶素子４０によれば、接続電極４４ａ，４４ｂから励振電極１４ｅ，１４ｆまでの距離を長くできるので、接続電極４４ａ，４４ｂをパッケージに接着又は接合した際の影響を低減できる。例えば、導電性接着剤を用いて接続電極４４ａ，４４ｂをパッケージに実装する際に、導電性接着剤が接続電極４４ａ，４４ｂを這い上がって励振電極１４ｅ，１４ｆに到達する距離を稼げるので、不良品の発生を抑制できる。水晶素子４０の斜視図及び断面図は、図１に準ずる。本実施形態４のその他の構成、作用及び効果は、実施形態１のそれらと同様である。 According to the crystal element 40, since the distance from the connection electrodes 44a and 44b to the excitation electrodes 14e and 14f can be increased, the influence when the connection electrodes 44a and 44b are bonded or joined to the package can be reduced. For example, when the connection electrodes 44a and 44b are mounted on the package using the conductive adhesive, the conductive adhesive crawls up the connection electrodes 44a and 44b to increase the distance to reach the excitation electrodes 14e and 14f, which is not possible. The generation of non-defective products can be suppressed. The perspective view and the cross-sectional view of the crystal element 40 conform to FIG. Other configurations, actions and effects of the fourth embodiment are similar to those of the first embodiment.

＜実施形態５＞
図６に示すように、本実施形態５の水晶デバイス６０は、実施形態１の水晶素子１０と、水晶素子１０が位置する基体６１と、基体６１とともに水晶素子１０を気密封止する蓋体６２と、を備えている。基体６１は、パッケージとも呼ばれ、基板６１ａと枠体６１ｂとからなる。基板６１ａの上面と枠体６１ｂの内側面と蓋体６２の下面とによって囲まれた空間が、水晶素子１０の収容部６３となる。水晶素子１０は、例えば、電子機器等で使用する基準信号を出力する。 <Embodiment 5>
As shown in FIG. 6, the crystal device 60 of the fifth embodiment includes the crystal element 10 of the first embodiment, the base 61 on which the crystal element 10 is located, and the lid 62 that airtightly seals the crystal element 10 together with the base 61. And have. The substrate 61, also called a package, is composed of a substrate 61a and a frame body 61b. The space surrounded by the upper surface of the substrate 61a, the inner surface of the frame 61b, and the lower surface of the lid 62 serves as the accommodating portion 63 of the crystal element 10. The crystal element 10 outputs a reference signal used in, for example, an electronic device.

換言すると、水晶デバイス６０は、上面に一対の電極パッド６１ｄ及び下面に四つの外部端子６１ｃを有する基板６１ａと、基板６１ａの上面の外周縁に沿って位置する枠体６１ｂと、一対の電極パッド６１ｄに導電性接着剤６１ｅを介して実装される水晶素子１０と、水晶素子１０を枠体６１ｂとともに気密封止する蓋体６２と、を備えている。 In other words, the crystal device 60 includes a substrate 61a having a pair of electrode pads 61d on the upper surface and four external terminals 61c on the lower surface, a frame body 61b located along the outer peripheral edge of the upper surface of the substrate 61a, and a pair of electrode pads. A crystal element 10 mounted on the 61d via a conductive adhesive 61e, and a lid 62 for airtightly sealing the crystal element 10 together with the frame body 61b are provided.

基板６１ａ及び枠体６１ｂは、例えばアルミナセラミックス又はガラスセラミックス等のセラミック材料からなり、一体的に形成されて基体６１となる。基体６１及び蓋体６２は、平面視して概ね矩形状である。外部端子６１ｃと電極パッド６１ｄ及び蓋体６２とは、基体６１の内部又は側面に形成された導体を介して電気的に接続される。詳しく言えば、基板６１ａの下面の四隅に外部端子６１ｃがそれぞれ位置する。それらのうちの二つの外部端子６１ｃが水晶素子１０に電気的に接続され、残りの二つの外部端子６１ｃが蓋体６２に電気的に接続される。外部端子６１ｃは、電子機器等のプリント配線板などに実装するために用いられる。 The substrate 61a and the frame 61b are made of a ceramic material such as alumina ceramics or glass ceramics, and are integrally formed to form the substrate 61. The base 61 and the lid 62 are substantially rectangular in plan view. The external terminal 61c, the electrode pad 61d, and the lid 62 are electrically connected to each other via a conductor formed inside or on the side surface of the base 61. More specifically, the external terminals 61c are located at the four corners of the lower surface of the substrate 61a. Two of them, the external terminals 61c, are electrically connected to the crystal element 10, and the remaining two external terminals 61c are electrically connected to the lid 62. The external terminal 61c is used for mounting on a printed wiring board of an electronic device or the like.

水晶素子１０は、前述したように、水晶片１２と、水晶片１２の上面に形成された励振電極１４ｅと、水晶片１２の下面に形成された励振電極１４ｆとを有する。そして、水晶素子１０は、導電性接着剤６１ｅを介して電極パッド６１ｄ上に接合され、安定した機械振動と圧電効果により、電子機器等の基準信号を発振する役割を果たす。 As described above, the crystal element 10 has a crystal piece 12, an excitation electrode 14e formed on the upper surface of the crystal piece 12, and an excitation electrode 14f formed on the lower surface of the crystal piece 12. Then, the crystal element 10 is bonded onto the electrode pad 61d via the conductive adhesive 61e, and plays a role of oscillating a reference signal of an electronic device or the like by stable mechanical vibration and a piezoelectric effect.

電極パッド６１ｄは、基体６１に水晶素子１０を実装するためのものであり、基板６１ａの一辺に沿うように隣接して一対が位置する。そして、一対の電極パッド６１ｄは、それぞれ接続電極１４ａ，１４ｂを接続して水晶素子１０の一端を固定端とし、水晶素子１０の他端を基板６１ａの上面から離間した自由端とすることにより、片持ち支持構造にて水晶素子１０を基板６１ａ上に固定する。 The electrode pads 61d are for mounting the crystal element 10 on the substrate 61, and a pair of electrode pads 61d are located adjacent to each other along one side of the substrate 61a. The pair of electrode pads 61d are connected to the connection electrodes 14a and 14b, respectively, so that one end of the crystal element 10 is a fixed end and the other end of the crystal element 10 is a free end separated from the upper surface of the substrate 61a. The crystal element 10 is fixed on the substrate 61a with a cantilever support structure.

導電性接着剤６１ｅは、例えば、シリコーン樹脂等のバインダの中に、導電フィラとして導電性粉末が含有されたものである。蓋体６２は、例えば、鉄、ニッケル又はコバルトの少なくともいずれかを含む合金からなり、シーム溶接などによって枠体６１ｂと接合することにより、真空状態にある又は窒素ガスなどが充填された収容部６３を気密的に封止する。 The conductive adhesive 61e contains, for example, a conductive powder as a conductive filler in a binder such as a silicone resin. The lid 62 is made of, for example, an alloy containing at least one of iron, nickel, and cobalt, and is joined to the frame 61b by seam welding or the like to be in a vacuum state or filled with nitrogen gas or the like. Is airtightly sealed.

水晶デバイス６０によれば、水晶素子１０を備えたことにより、安定した電気特性を発揮できる。なお、水晶デバイス６０は、実施形態１の水晶素子１０に限らず、他の実施形態の水晶素子を備えたものとしてもよい。 According to the crystal device 60, stable electrical characteristics can be exhibited by providing the crystal element 10. The crystal device 60 is not limited to the crystal element 10 of the first embodiment, and may include a crystal element of another embodiment.

＜実施形態６＞
図７に示すように、本実施形態６の電子機器７１，７２はそれぞれ水晶デバイス６０を備えている。図７［Ａ］に例示した電子機器７１はスマートフォンであり、図７［Ｂ］に例示した電子機器７２はパーソナルコンピュータである。 <Embodiment 6>
As shown in FIG. 7, the electronic devices 71 and 72 of the sixth embodiment each include a crystal device 60. The electronic device 71 illustrated in FIG. 7 [A] is a smartphone, and the electronic device 72 illustrated in FIG. 7 [B] is a personal computer.

図６に示すように構成された水晶デバイス６０は、はんだ付け、金（Ａｕ）バンプ又は導電性接着剤などによってプリント基板に外部端子６１ｃの底面が固定されることによって、電子機器７１，７２を構成するプリント基板の表面に実装される。そして、水晶デバイス６０は、例えば、スマートフォン、パーソナルコンピュータ、時計、ゲーム機、通信機、又はカーナビゲーションシステム等の車載機器などの種々の電子機器で発振源として用いられる。 The crystal device 60 configured as shown in FIG. 6 attaches electronic devices 71 and 72 by fixing the bottom surface of the external terminal 61c to the printed circuit board by soldering, gold (Au) bumps, conductive adhesive, or the like. It is mounted on the surface of the constituent printed circuit board. The crystal device 60 is used as an oscillation source in various electronic devices such as smartphones, personal computers, watches, game machines, communication devices, and in-vehicle devices such as car navigation systems.

電子機器７１，７２によれば、水晶デバイス６０を備えたことにより、安定した電気特性に基づく高性能かつ高信頼性の動作を実現できる。 According to the electronic devices 71 and 72, by providing the crystal device 60, it is possible to realize high-performance and highly reliable operation based on stable electrical characteristics.

＜その他＞
以上、上記各実施形態を参照して本開示を説明したが、本開示はこれらに限定されるものではない。本開示の構成や詳細については、当業者が理解し得るさまざまな変更を加えることができる。また、本開示には、上記各実施形態の構成の一部又は全部を相互に適宜組み合わせたものも含まれる。 <Others>
Although the present disclosure has been described above with reference to each of the above embodiments, the present disclosure is not limited thereto. Various changes that can be understood by those skilled in the art can be made to the structure and details of this disclosure. The present disclosure also includes a part or all of the configurations of the above embodiments, which are appropriately combined with each other.

１０，２０，３０，４０ 水晶素子
１１ａ，１１ｂ 長辺
１１ｃ，１１ｄ 短辺
１２ 水晶片
１３ｅ，１３ｆ 主面
１３ａ，１３ｂ，１３ｃ，１３ｄ 側面
１４ａ，１４ｂ，３４ａ，３４ｂ，４４ａ，４４ｂ 接続電極
１４ｅ，１４ｆ 励振電極
１４ｇ，１４ｈ，３４ｇ，３４ｈ，４４ｇ，４４ｈ 配線電極
１５ｅ，１５ｆ，２５ｅ，２５ｆ，３５ｅ，３５ｆ，４５ｅ，４５ｆ 振動抑制パターン
１６ａ，１６ｂ ｍ面
１７ａ，１７ｂ 垂直面
６０ 水晶デバイス
６１ 基体
６１ａ 基板
６１ｂ 枠体
６１ｃ 外部端子
６１ｄ 電極パッド
６１ｅ 導電性接着剤
６２ 蓋体
６３ 収容部
７１，７２電子機器 10, 20, 30, 40 Crystal elements 11a, 11b Long side 11c, 11d Short side 12 Crystal pieces 13e, 13f Main surface 13a, 13b, 13c, 13d Side surface 14a, 14b, 34a, 34b, 44a, 44b Connection electrode 14e, 14f Excitation electrode 14g, 14h, 34g, 34h, 44g, 44h Wiring electrode 15e, 15f, 25e, 25f, 35e, 35f, 45e, 45f Vibration suppression pattern 16a, 16b m surface 17a, 17b Vertical surface 60 Crystal device 61 Base 61a Substrate 61b Frame 61c External terminal 61d Electrode pad 61e Conductive adhesive 62 Lid 63 Storage 71,72 Electronic equipment

Claims (6)

平面視して長辺及び短辺からなる略矩形であり、互いに向かい合う二つの主面及び前記二つの主面に挟まれた側面を有する水晶片と、
前記主面においてその中央に位置する励振電極と、
前記主面においてその周縁に位置する接続電極と、
前記接続電極と前記励振電極とを電気的に繋ぐ配線電極と、
前記長辺を含む前記側面の一部であり、前記長辺に沿って延びる結晶面であるｍ面と、
前記主面の前記ｍ面に接する側及び前記ｍ面の少なくとも一方に位置し、前記長辺に沿って延びる振動抑制パターンと、
を備えた水晶素子。 A crystal piece that is a substantially rectangular shape consisting of a long side and a short side when viewed in a plan view, and has two main surfaces facing each other and a side surface sandwiched between the two main surfaces.
The excitation electrode located at the center of the main surface,
A connection electrode located on the periphery of the main surface and
A wiring electrode that electrically connects the connection electrode and the excitation electrode,
The m-plane, which is a part of the side surface including the long side and is a crystal plane extending along the long side,
A vibration suppression pattern located on at least one of the main surface in contact with the m surface and the m surface and extending along the long side.
Crystal element equipped with. 前記振動抑制パターンは、前記主面の前記ｍ面に接する側及び前記ｍ面の両方に位置する、
請求項１記載の水晶素子。 The vibration suppression pattern is located on both the side of the main surface in contact with the m-plane and the m-plane.
The crystal element according to claim 1. 前記接続電極は、前記主面の周縁において前記短辺側に位置し、
前記配線電極の一部は、前記主面の前記ｍ面に接する側及び前記ｍ面の少なくとも一方に位置し、前記接続電極から前記長辺に沿って延び前記振動抑制パターンに繋がっている、
請求項１又は２記載の水晶素子。 The connection electrode is located on the short side of the peripheral edge of the main surface and is located on the short side.
A part of the wiring electrode is located on the side of the main surface in contact with the m-plane and at least one of the m-plane, extends from the connection electrode along the long side, and is connected to the vibration suppression pattern.
The crystal element according to claim 1 or 2. 前記接続電極は、前記主面の周縁において一方の前記短辺側に位置し、
前記配線電極の一部は、前記主面の前記ｍ面に接する側及び前記ｍ面の少なくとも一方に位置し、前記振動抑制パターンと並んでかつ接して前記接続電極から前記長辺に沿って延び、他方の前記短辺側で前記励振電極に繋がる、
請求項１又は２記載の水晶素子。 The connection electrode is located on one of the short sides of the peripheral edge of the main surface.
A part of the wiring electrode is located on the side of the main surface in contact with the m-plane and at least one of the m-plane, and extends along the long side from the connection electrode in line with and in contact with the vibration suppression pattern. , Connected to the excitation electrode on the other short side.
The crystal element according to claim 1 or 2. 請求項１乃至４のいずれか一つに記載の水晶素子と、
前記水晶素子が位置する基体と、
前記基体とともに前記水晶素子を気密封止する蓋体と、
を備えた水晶デバイス。 The crystal element according to any one of claims 1 to 4,
The substrate on which the crystal element is located and
A lid that airtightly seals the crystal element together with the substrate,
Crystal device with. 請求項５記載の水晶デバイスを備えた電子機器。 An electronic device including the crystal device according to claim 5.
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JPH08148967A (en) * 1994-11-22 1996-06-07 Matsushita Electric Ind Co Ltd Piezoelectric resonator and manufacture therefor
JP2001144577A (en) * 1999-11-15 2001-05-25 Murata Mfg Co Ltd Piezoelectric resonator
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JP2015211362A (en) * 2014-04-28 2015-11-24 京セラクリスタルデバイス株式会社 Quarts device and manufacturing method for quarts device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148967A (en) * 1994-11-22 1996-06-07 Matsushita Electric Ind Co Ltd Piezoelectric resonator and manufacture therefor
JP2001144577A (en) * 1999-11-15 2001-05-25 Murata Mfg Co Ltd Piezoelectric resonator
JP2014179769A (en) * 2013-03-14 2014-09-25 Sii Crystal Technology Inc Crystal oscillator, oscillator, electronic apparatus and radio clock
JP2015211362A (en) * 2014-04-28 2015-11-24 京セラクリスタルデバイス株式会社 Quarts device and manufacturing method for quarts device

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