JP2021027088A - スピン材料およびスピン軌道トルク生成効率の制御方法 - Google Patents
スピン材料およびスピン軌道トルク生成効率の制御方法 Download PDFInfo
- Publication number
- JP2021027088A JP2021027088A JP2019141973A JP2019141973A JP2021027088A JP 2021027088 A JP2021027088 A JP 2021027088A JP 2019141973 A JP2019141973 A JP 2019141973A JP 2019141973 A JP2019141973 A JP 2019141973A JP 2021027088 A JP2021027088 A JP 2021027088A
- Authority
- JP
- Japan
- Prior art keywords
- spin
- torque generation
- orbit torque
- generation efficiency
- rhenium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims description 19
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 19
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims abstract description 19
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 18
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 claims description 16
- 229910003449 rhenium oxide Inorganic materials 0.000 claims description 16
- 238000005546 reactive sputtering Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 230000005415 magnetization Effects 0.000 description 12
- 239000000523 sample Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000013074 reference sample Substances 0.000 description 9
- 230000005294 ferromagnetic effect Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 229910001385 heavy metal Inorganic materials 0.000 description 6
- 230000005291 magnetic effect Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005350 ferromagnetic resonance Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 235000021028 berry Nutrition 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 optical phonons Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004838 photoelectron emission spectroscopy Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Landscapes
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (5)
- レニウムの酸化物から構成されてスピン軌道トルクを生成するスピン材料。
- レニウムの酸化物から構成されたスピン材料のスピン軌道トルク生成効率の制御方法であって、
前記スピン材料の酸化の状態を制御することで、前記スピン材料のスピン軌道トルク生成効率を制御するスピン軌道トルク生成効率の制御方法。 - 請求項2記載のスピン軌道トルク生成効率の制御方法において、
前記スピン材料の成膜時の温度により、前記スピン材料の酸化の状態を制御することを特徴とするスピン軌道トルク生成効率の制御方法。 - 請求項2または3記載のスピン軌道トルク生成効率の制御方法において、
前記スピン材料の成膜時の成膜レートにより、前記スピン材料の酸化の状態を制御することを特徴とするスピン軌道トルク生成効率の制御方法。 - 請求項2〜4のいずれか1項に記載のスピン軌道トルク生成効率の制御方法において、
酸素を用いた反応性スパッタ法により、前記スピン材料を成膜することを特徴とするスピン軌道トルク生成効率の制御方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019141973A JP7174954B2 (ja) | 2019-08-01 | 2019-08-01 | スピン軌道トルク生成効率の制御方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019141973A JP7174954B2 (ja) | 2019-08-01 | 2019-08-01 | スピン軌道トルク生成効率の制御方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021027088A true JP2021027088A (ja) | 2021-02-22 |
JP7174954B2 JP7174954B2 (ja) | 2022-11-18 |
Family
ID=74664026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019141973A Active JP7174954B2 (ja) | 2019-08-01 | 2019-08-01 | スピン軌道トルク生成効率の制御方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP7174954B2 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009146512A (ja) * | 2007-12-14 | 2009-07-02 | Hitachi Global Storage Technologies Netherlands Bv | 磁気ヘッド及び磁気記録装置 |
WO2012026168A1 (ja) * | 2010-08-27 | 2012-03-01 | 独立行政法人理化学研究所 | 電流-スピン流変換素子 |
US20150380630A1 (en) * | 2014-06-26 | 2015-12-31 | Nec Corporation | Thermoelectric Conversion Structure and Method for Making the Same |
-
2019
- 2019-08-01 JP JP2019141973A patent/JP7174954B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009146512A (ja) * | 2007-12-14 | 2009-07-02 | Hitachi Global Storage Technologies Netherlands Bv | 磁気ヘッド及び磁気記録装置 |
WO2012026168A1 (ja) * | 2010-08-27 | 2012-03-01 | 独立行政法人理化学研究所 | 電流-スピン流変換素子 |
JP2012049403A (ja) * | 2010-08-27 | 2012-03-08 | Institute Of Physical & Chemical Research | 電流−スピン流変換素子 |
US20130154633A1 (en) * | 2010-08-27 | 2013-06-20 | Riken | Electric current-spin current conversion device |
US20150380630A1 (en) * | 2014-06-26 | 2015-12-31 | Nec Corporation | Thermoelectric Conversion Structure and Method for Making the Same |
JP2016009838A (ja) * | 2014-06-26 | 2016-01-18 | 日本電気株式会社 | 熱電変換構造およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP7174954B2 (ja) | 2022-11-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108292703B (zh) | 自旋流磁化反转元件、磁阻效应元件及磁存储器 | |
Qiu et al. | Spin–orbit-torque engineering via oxygen manipulation | |
Munjal et al. | Multilevel resistive and magnetization switching in Cu/CoFe2O4/Pt device: coexistence of ionic and metallic conducting filaments | |
Kumar et al. | Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer | |
Odagawa et al. | Electroforming and resistance-switching mechanism in a magnetite thin film | |
US9178153B2 (en) | Memristor structure with a dopant source | |
Wang et al. | Performance enhancement of TaOx resistive switching memory using graded oxygen content | |
Ikhtiar et al. | Magneto-transport and microstructure of Co2Fe (Ga0. 5Ge0. 5)/Cu lateral spin valves prepared by top-down microfabrication process | |
Liu et al. | Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure | |
Ohno et al. | Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation | |
JP7081842B2 (ja) | スピン起動トルクベースのスイッチング素子の製造方法 | |
Otsuka et al. | Ferromagnetic nano-conductive filament formed in Ni/TiO 2/Pt resistive-switching memory | |
Lee et al. | Reduction in reset current of unipolar NiO-based resistive switching through nickel interfacial layer | |
Lee et al. | Understanding of the abrupt resistive transition in different types of threshold switching devices from materials perspective | |
Yamaguchi et al. | Temperature estimation in a ferromagnetic Fe–Ni nanowire involving a current-driven domain wall motion | |
Abbas et al. | Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly hybrid devices | |
Hao et al. | Electric field induced manipulation of resistive and magnetization switching in Pt/NiFe1. 95Cr0. 05O4/Pt memory devices | |
Yan et al. | Unipolar resistive switching effect in YMn1− δO3 thin films | |
Zhou et al. | Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application | |
JP7006696B2 (ja) | 熱電変換素子 | |
KR101829452B1 (ko) | 자기 메모리 소자 | |
Cao et al. | A 10-nm-thick silicon oxide based high switching speed conductive bridging random access memory with ultra-low operation voltage and ultra-low LRS resistance | |
JP7174954B2 (ja) | スピン軌道トルク生成効率の制御方法 | |
Chen et al. | Tailoring Neuromorphic Switching by Cu N x-Mediated Orbital Currents | |
Hwang et al. | Effects of a load resistor on conducting filament characteristics and unipolar resistive switching behaviors in a Pt/NiO/Pt structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20190801 |
|
A80 | Written request to apply exceptions to lack of novelty of invention |
Free format text: JAPANESE INTERMEDIATE CODE: A80 Effective date: 20190801 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210824 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220815 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220927 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221025 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221028 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7174954 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |