JP2021004794A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2021004794A5 JP2021004794A5 JP2019118686A JP2019118686A JP2021004794A5 JP 2021004794 A5 JP2021004794 A5 JP 2021004794A5 JP 2019118686 A JP2019118686 A JP 2019118686A JP 2019118686 A JP2019118686 A JP 2019118686A JP 2021004794 A5 JP2021004794 A5 JP 2021004794A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- refractive index
- predetermined position
- thickness
- measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 44
- 230000003287 optical Effects 0.000 claims description 17
- 230000000875 corresponding Effects 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 7
- 230000003595 spectral Effects 0.000 claims description 6
- 238000001228 spectrum Methods 0.000 claims description 6
- 230000001678 irradiating Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims 2
Description
上記知見に基づき完成した本発明の要旨構成は以下のとおりである。
（１）（Ａ）半導体ウェーハの表面の所定位置における屈折率を求める屈折率取得工程と、
（Ｂ）前記半導体ウェーハの表面の前記所定位置における厚みに相当する光路長を測定する光路長測定工程と、
（Ｃ）前記半導体ウェーハの前記厚みに相当する光路長を、前記屈折率取得工程において求めた前記屈折率で除することによって、前記所定位置での前記半導体ウェーハの厚み測定値を得る厚み測定工程と、
を含み、
前記（Ｂ）光路長測定工程は、
（ｉ）所定の帯域幅を有する赤外光を前記半導体ウェーハの表面の前記所定位置に照射する第１工程と、
（ｉｉ）前記赤外光が前記半導体ウェーハの表面で反射してなる第１反射光と、前記赤外光が前記半導体ウェーハを透過して該半導体ウェーハの裏面で反射してなる第２反射光との干渉光を検出する第２工程と、
（ｉｉｉ）前記第２工程で検出した前記干渉光の分光スペクトルを得る第３工程と、
（ｉｖ）前記分光スペクトルを波形解析して、前記所定位置での前記半導体ウェーハの厚みに相当する光路長を求める第４工程と、
を含み、
前記（Ａ）屈折率取得工程、前記（Ｂ）光路長測定工程、及び前記（Ｃ）厚み測定工程を前記半導体ウェーハの面内の複数点で行うことを特徴とする半導体ウェーハの厚み測定方法。
The abstract structure of the present invention completed based on the above findings is as follows.
(1) (A) Refractive index acquisition step for obtaining the refractive index at a predetermined position on the surface of the semiconductor wafer, and
(B) An optical path length measuring step of measuring an optical path length corresponding to the thickness of the surface of the semiconductor wafer at the predetermined position, and
(C) the optical path length corresponding to previous SL thickness of the semiconductor wafer, by dividing the refractive index determined in the refractive index obtaining step, the thickness measurement to obtain a thickness measurement of the semiconductor wafer at the predetermined position Process and
Including
The (B) optical path length measuring step is
(I) The first step of irradiating the predetermined position on the surface of the semiconductor wafer with infrared light having a predetermined bandwidth.
(Ii) The first reflected light formed by reflecting the infrared light on the front surface of the semiconductor wafer and the second reflected light formed by the infrared light transmitted through the semiconductor wafer and reflected on the back surface of the semiconductor wafer. The second step of detecting the interference light with
(Iii) A third step of obtaining a spectral spectrum of the interference light detected in the second step, and
(Iv) A fourth step of waveform-analyzing the spectral spectrum to obtain an optical path length corresponding to the thickness of the semiconductor wafer at the predetermined position.
Including
A method for measuring the thickness of a semiconductor wafer, which comprises performing the (A) refractive index acquisition step, the (B) optical path length measuring step, and the (C) thickness measuring step at a plurality of points in the plane of the semiconductor wafer.
Claims (6)
（Ｂ）前記半導体ウェーハの表面の前記所定位置における厚みに相当する光路長を測定する光路長測定工程と、
（Ｃ）前記半導体ウェーハの前記厚みに相当する光路長を、前記屈折率取得工程において求めた前記屈折率で除することによって、前記所定位置での前記半導体ウェーハの厚み測定値を得る厚み測定工程と、
を含み、
前記（Ｂ）光路長測定工程は、
（ｉ）所定の帯域幅を有する赤外光を前記半導体ウェーハの表面の前記所定位置に照射する第１工程と、
（ｉｉ）前記赤外光が前記半導体ウェーハの表面で反射してなる第１反射光と、前記赤外光が前記半導体ウェーハを透過して該半導体ウェーハの裏面で反射してなる第２反射光との干渉光を検出する第２工程と、
（ｉｉｉ）前記第２工程で検出した前記干渉光の分光スペクトルを得る第３工程と、
（ｉｖ）前記分光スペクトルを波形解析して、前記所定位置での前記半導体ウェーハの厚みに相当する光路長を求める第４工程と、
を含み、
前記（Ａ）屈折率取得工程、前記（Ｂ）光路長測定工程、及び前記（Ｃ）厚み測定工程を前記半導体ウェーハの面内の複数点で行うことを特徴とする半導体ウェーハの厚み測定方法。 (A) A refractive index acquisition step for obtaining the refractive index at a predetermined position on the surface of the semiconductor wafer, and
(B) An optical path length measuring step of measuring an optical path length corresponding to the thickness of the surface of the semiconductor wafer at the predetermined position, and
(C) the optical path length corresponding to previous SL thickness of the semiconductor wafer, by dividing the refractive index determined in the refractive index obtaining step, the thickness measurement to obtain a thickness measurement of the semiconductor wafer at the predetermined position Process and
Including
The (B) optical path length measuring step is
(I) The first step of irradiating the predetermined position on the surface of the semiconductor wafer with infrared light having a predetermined bandwidth.
(Ii) The first reflected light formed by reflecting the infrared light on the front surface of the semiconductor wafer and the second reflected light formed by the infrared light transmitted through the semiconductor wafer and reflected on the back surface of the semiconductor wafer. The second step of detecting the interference light with
(Iii) A third step of obtaining a spectral spectrum of the interference light detected in the second step, and
(Iv) A fourth step of waveform-analyzing the spectral spectrum to obtain an optical path length corresponding to the thickness of the semiconductor wafer at the predetermined position.
Including
A method for measuring the thickness of a semiconductor wafer, which comprises performing the (A) refractive index acquisition step, the (B) optical path length measuring step, and the (C) thickness measuring step at a plurality of points in the plane of the semiconductor wafer.
前記半導体ウェーハの表面の所定位置における屈折率を求める屈折率取得工程を行う屈折率取得ユニットと、
所定の帯域幅を有する赤外光を前記半導体ウェーハの表面の前記所定位置に照射する第１工程を行う光学ユニットと、
前記赤外光が前記半導体ウェーハの表面で反射してなる第１反射光と、前記赤外光が前記半導体ウェーハを透過して該半導体ウェーハの裏面で反射してなる第２反射光との干渉光を検出する第２工程を行う検出ユニットと、
（ａ）前記検出ユニットで検出した前記干渉光の分光スペクトルを得る第３工程と、
（ｂ）前記分光スペクトルを波形解析して、前記所定位置での前記半導体ウェーハの厚みに相当する光路長を求める第４工程と、を行う第１演算部と、
前記所定位置における前記屈折率及び前記厚みに相当する光路長を記憶するメモリと、
前記メモリに記憶された前記半導体ウェーハの厚みに相当する光路長を、前記半導体ウェーハの前記屈折率で除することによって、前記所定位置での前記半導体ウェーハの厚み測定値を得る厚み測定工程を行う第２演算部と、
前記所定位置を、前記半導体ウェーハの面内の複数点に設定可能な、前記光学ユニットと前記半導体ウェーハとの相対位置の可動機構と、
を有し、
前記屈折率取得工程、前記第１工程から前記第４工程、及び前記厚み測定工程を前記半導体ウェーハの面内の複数点で行うことを特徴とする半導体ウェーハの厚み測定システム。 A pedestal on which a semiconductor wafer is placed and
A refractive index acquisition unit that performs a refractive index acquisition step of obtaining a refractive index at a predetermined position on the surface of the semiconductor wafer.
An optical unit that performs a first step of irradiating the predetermined position with infrared light having a predetermined bandwidth on the surface of the semiconductor wafer.
Interference between the first reflected light that the infrared light is reflected on the surface of the semiconductor wafer and the second reflected light that the infrared light passes through the semiconductor wafer and is reflected on the back surface of the semiconductor wafer. A detection unit that performs the second step of detecting light,
(A) A third step of obtaining a spectral spectrum of the interference light detected by the detection unit, and
(B) A first calculation unit that performs a fourth step of performing waveform analysis of the spectral spectrum to obtain an optical path length corresponding to the thickness of the semiconductor wafer at the predetermined position.
A memory that stores the refractive index and the optical path length corresponding to the thickness at the predetermined position, and
A thickness measurement step of obtaining a thickness measurement value of the semiconductor wafer at a predetermined position is performed by dividing the optical path length corresponding to the thickness of the semiconductor wafer stored in the memory by the refractive index of the semiconductor wafer. The second arithmetic unit and
A movable mechanism for a relative position between the optical unit and the semiconductor wafer, which can set the predetermined position at a plurality of points in the plane of the semiconductor wafer.
Have,
A semiconductor wafer thickness measuring system, wherein the refractive index acquisition step, the first step to the fourth step, and the thickness measuring step are performed at a plurality of points in the plane of the semiconductor wafer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019118686A JP2021004794A (en) | 2019-06-26 | 2019-06-26 | Method and system for measuring thickness of semiconductor wafers |
| TW109113581A TW202100946A (en) | 2019-06-26 | 2020-04-23 | Method of measuring semiconductor wafer thickness and system of measuring semiconductor wafer thickness |
| PCT/JP2020/017836 WO2020261745A1 (en) | 2019-06-26 | 2020-04-24 | Semiconductor wafer thickness measurement method and semiconductor wafer thickness measurement system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019118686A JP2021004794A (en) | 2019-06-26 | 2019-06-26 | Method and system for measuring thickness of semiconductor wafers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2021004794A JP2021004794A (en) | 2021-01-14 |
| JP2021004794A5 true JP2021004794A5 (en) | 2021-08-12 |
Family
ID=74061551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019118686A Pending JP2021004794A (en) | 2019-06-26 | 2019-06-26 | Method and system for measuring thickness of semiconductor wafers |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2021004794A (en) |
| TW (1) | TW202100946A (en) |
| WO (1) | WO2020261745A1 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11274259A (en) * | 1998-03-26 | 1999-10-08 | Hitachi Ltd | Thickness measuring device and thickness controller |
| JP2002277217A (en) * | 2001-03-16 | 2002-09-25 | Toray Ind Inc | Web thickness measuring device and web manufacturing method |
| JP2011180113A (en) * | 2010-03-03 | 2011-09-15 | Opto-Electronics Laboratory Inc | Measurement of film thickness, and measurement of refractive index of diamond-like carbon thin film |
| JP6487767B2 (en) * | 2015-05-08 | 2019-03-20 | 株式会社ディスコ | Dry polishing machine |
-
2019
- 2019-06-26 JP JP2019118686A patent/JP2021004794A/en active Pending
-
2020
- 2020-04-23 TW TW109113581A patent/TW202100946A/en unknown
- 2020-04-24 WO PCT/JP2020/017836 patent/WO2020261745A1/en active Application Filing
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2017507338A (en) | Film thickness measurement on any substrate | |
| CN104833433B (en) | A kind of system and method for the system and method for detecting phase and detection refractive index | |
| JP2004536314A5 (en) | ||
| JP5698863B2 (en) | Method and apparatus for measuring refractive index | |
| CN105066889B (en) | A kind of portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS and its film thickness measuring method | |
| JP6983374B2 (en) | Measuring device and measuring method | |
| JP2012154931A (en) | Method and device for execution of film thickness measurement using white light scanning interferometry | |
| JP6863831B2 (en) | Calculation method of calculation formula for output correction of photodetector and output correction method of photodetector | |
| JP5868142B2 (en) | Refractive index distribution measuring method and refractive index distribution measuring apparatus | |
| WO2020186844A1 (en) | Self-adaptive surface absorption spectrum analysis method and system, storage medium, and device | |
| CN104677299A (en) | Film detection device and method | |
| CN111386449B (en) | Stress analysis system for curved surface material inspection | |
| TWI610379B (en) | Thickness change monitor wafer for in situ film thickness monitoring | |
| CN103759675A (en) | Synchronous detection method for aspheric surface micro-structures of optical elements | |
| JP2015125090A5 (en) | ||
| JP2021004794A5 (en) | ||
| TWI598565B (en) | Method of measuring thickness of thin film | |
| CN108692819B (en) | Wave-front detection system of wavelength tuning Hartmann sensor | |
| CN204575033U (en) | Based on the high precision distance measurement system of cross dispersion spectral domain interferometer | |
| CN105203504A (en) | Method for improving sensitivity of surface plasmon resonance sensor | |
| JP2011196766A (en) | Method for measuring shape of measured object having light transmittance | |
| CN110243760B (en) | Line domain frequency domain optical coherence tomography system and longitudinal coordinate calibration method thereof | |
| RU2467309C1 (en) | Method to measure coefficients of mirror reflection | |
| CN108663192B (en) | Detection device and method of wavefront sensor | |
| CN205027315U (en) | Glass thickness detection device |