CN105066889B - A kind of portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS and its film thickness measuring method - Google Patents
A kind of portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS and its film thickness measuring method Download PDFInfo
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Abstract
The invention discloses a kind of portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS and its film thickness measuring method.Exemplar measurement twice need to be only completed, the workload of user will not be increased, measurement performance is improved by spectrum simulation method；The vertical incidence relation between master body and tested sample and measuring beam is ensured by three infrared distance sensors being arranged on calibrator measurement end face simultaneously, so as to maintain to correct the ease-to-operate of exemplar measurement links；In addition, the calibrator of the present invention eliminates speculum, make optical path more succinct, compact overall structure, it is easy to accomplish portable layout.It it should be noted that when conventional interference film thickness gauge volume is diminished, realizing after portable type measuring, its applicable industrial environment will be greatly expanded, and act not only as portable film thickness gauge, can also be arranged on coating process line, realize the on-line monitoring measurement of film.
Description
Technical field
The invention belongs to semiconductive thin film field of optical measuring technologies, more particularly, to a kind of portable Thinner Films
Instrument and its film thickness measuring method.
Background technology
With the development and the rise of thin film technique of semi-conductor industry, film is applied to electronics member device more and more widely
The fields such as part, MOEMS and optical component.The thickness of film significantly affects the mechanics, electromagnetism, optics of film
With the performance such as photoelectricity, the thickness of such as ITO nesa coating not only influences its resistivity to have an effect on selecting for its crystallite dimension and crystal face
Excellent whereabouts, the thickness effect of NiFe films its magnetic resistance performance, V2O5The thickness of film influences its electrochromic property etc..Therefore exist
In film preparation and analysis application, the accurate measurement of film thickness is particularly important.
The measuring method of current thin film thickness mainly has two classes, i.e. non optical method and optical means.Non optical method master
To include sonde method, supercritical ultrasonics technology and quartz crystal oscillator method etc., repeat no more in the present invention；And optical means mainly includes photoelectricity
Extremum method, ellipsometry method and spectroscopic methodology etc..Wherein photoelectric extreme value method can only be monitored to regular film system, and precision is inadequate
Height, and have minimum monitoring thickness limitation；Although ellipsometry method can characterize multiple parameters such as thickness, refractive index and the suction of film
Receive coefficient etc., but it depends on ellipsometer, and ellipsometer costly and has the limitation of use environment, is typically applied only to section
Grind in type equipment；Spectroscopic methodology calculates thickness, this method based on the interference theory of light by measuring the spectral characteristic of film
Principle is ripe, hardware realizes simple, easy of integration, suitable environment extensively, and most of optical film thickness meters use the method.
General optical film thickness meter measurement film thickness, is mainly based upon the principle of interference of light, is specially：When film thickness gauge to
When film to be measured launches the measurement light of known spectra scope, the reflected light of film and Air Interface can with from film and substrate interface
Reflected light interference, and generation of this interference is relevant with thickness etc., therefore can obtain the thickness of film by calculating.
Publication No. CN101995224A Chinese patent application discloses a kind of interference film thickness gauge and albedo measurement side
Method, it is necessary to and adjustable exemplar platform is used cooperatively and measured.Its measurement process is divided into subordinate measurement period and main measurement period,
Subordinate measurement period mainly measures the dark noise I of photodetectord, reflectivity for 0 black exemplar reflected light intensity values IbAnd reflectivity
For RrCorrection exemplar reflected light intensity values Ir, and persistence；The dark noise of photodetector is mainly measured in main measurement period
I′d, reflectivity for 0 black exemplar reflected light intensity values I 'bWith the reflected light intensity values I ' of tested samples.The patent application think from
Belonging to measurement period may be different from the light source light intensity values and noise of detector in main measurement period, so as to cause IdWith I 'd、IbWith I 'b
Difference, and using ratio disappear ginseng method calculate tested sample reflectivity, then inversely ask for treating test sample using fresnel formula
Part film thickness.
There is problems with it：1st, device complexity be inconvenient to carry, and because data processing depends on computer and office
It is limited to a kind of laboratory measurement instrument；2nd, its time saved depend primarily on inversely asked for reflectivity thickness process when
Between, which, which causes measurement result to handle cumbersome and accuracy, to be ensured；3rd, main measurement process still needs measurement twice
(the black exemplar of measurement and tested sample), it is inreal to save time of measuring；4th, it uses same correction result all the time, but should
Correction result can be changed over time so that measurement result reliability is reduced.
The content of the invention
For the disadvantages described above or Improvement requirement of prior art, the invention provides a kind of portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS and its
Film thickness measuring method, its object is to which conventional interference film thickness gauge is transformed into portable film thickness gauge, and provides corresponding measuring method
And data processing algorithm, rush enables devices to be applied to various occasions, while saving time of measuring and holding meanss as far as possible
Simplicity.
To achieve the above object, according to one aspect of the present invention, there is provided a kind of portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS, its feature
It is, including light source, the first collimating mirror, beam splitter, the second collimating mirror, micro spectrometer, A/D modular converters and data processing mould
Block；The light source is arranged on the focal point of first collimating mirror, and stable for providing can be completely covered visible light wave range
Incident light, first collimating mirror is used to the incident light being collimated into collimated light beam, and the beam splitter is arranged on described first
On the output light path of collimating mirror, its light splitting surface, in 45 ° of angles, is surveyed with the collimated light beam for reflecting the collimated light beam
Measure light beam；During work, the measuring beam vertical incidence is on the surface of master body or tested sample, by master body or to be measured
Obtained the reflected beams transmit through the beam splitter and reach second collimating mirror after going out after exemplar reflection；Second collimation
Mirror is used to the reflected beams converging to the micro spectrometer, and the micro spectrometer is used to detect the reflected beams
Light intensity, the analog signal that the A/D modular converters are used to measure the micro spectrometer is converted to data signal and exported extremely
The data processing module, the data processing module, which is used to be calculated according to the measurement result of the micro spectrometer, obtains to be measured
The thickness of exemplar.
Preferably, the light source is halogen tungsten lamp light source, deuterium lamp light source or xenon source.
Preferably, the measurement end face of the portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS is vertical with the measuring beam, in addition to multiple equal
Whether the even infrared distance sensor being distributed on the measurement end face, uniformly attach for examination criteria exemplar or tested sample
On the measurement end face, so that it is guaranteed that master body or tested sample are vertical with the measuring beam.
It is another aspect of this invention to provide that there is provided a kind of side that film thickness measuring is carried out with above-mentioned portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS
Method, it is characterised in that comprise the following steps：
(1) light source is closed, light intensity I is measured using micro spectrometerb(λ)；
(2) light source is opened, master body is placed in the light path of measuring beam, makes it vertical with measuring beam, is utilized
The reflective light intensity I of micro spectrometer measurement standard exemplarr(λ)；
(3) tested sample is placed in the light path of measuring beam, makes it vertical with measuring beam, utilize micro spectrometer
Measure the reflective light intensity I of tested samples(λ)；
(4) I is utilizedbThe reflective light intensity I of (λ), master bodyrThe reflective light intensity I of (λ) and tested samples(λ), is calculated to be measured
The ratio between actual reflectance of exemplar and master bodyWherein, λ is optical wavelength；
(5) the ratio between the actual reflectance of tested sample and master body f is utilized1(λ) calculates the thickness for obtaining tested sample
t。
Preferably, the step (5) is specially：Calculate the ratio between the theoretical reflectance rate of tested sample and master body f0(λ,
T), and then the thickness t of tested sample is tried to achieve so thatMinimum, wherein, λ1For can
See the lower limit of optical wavelength, λ2For the upper limit of visible wavelength.
In general, by the contemplated above technical scheme of the present invention compared with prior art, with following beneficial effect
Really：Exemplar measurement twice need to be only completed, the workload of user will not be increased, measurement performance is improved by spectrum simulation method；
Ensure master body and tested sample and survey by three infrared distance sensors being arranged on calibrator measurement end face simultaneously
The vertical incidence relation between light beam is measured, so as to maintain to correct the ease-to-operate of exemplar measurement links；In addition, the survey of the present invention
Thick instrument eliminates speculum, makes optical path more succinct, compact overall structure, it is easy to accomplish portable layout.Need explanation
, diminish when by conventional interference film thickness gauge volume, realize after portable type measuring, its applicable industrial environment will expand significantly
Exhibition, acts not only as portable film thickness gauge, can also be arranged on coating process line, realizes the on-line monitoring measurement of film.
Brief description of the drawings
Fig. 1 is the structure principle chart of the portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS of the embodiment of the present invention；
Fig. 2 is the three-dimensional effect diagram of the portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS of the embodiment of the present invention；
Fig. 3 is a kind of thin-skin model figure；
Fig. 4 is flow chart of data processing figure.
In all of the figs, identical reference is used for representing identical element or structure, wherein：10- light sources, 20-
First collimating mirror, 30- beam splitters, the collimating mirrors of 40- second, 50- micro spectrometers, 60- target exemplars, 70- infrared distance measurements sensing
Device, 80-A/D modular converters, 90- data processing modules, 100- light source power supply modules, 110- LCDs, 120- general supplies.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in each embodiment of invention described below
Not constituting conflict each other can just be mutually combined.
As shown in figure 1, the portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS of the embodiment of the present invention includes light source 10, the first collimating mirror 20, beam splitting
Device 30, the second collimating mirror 40, micro spectrometer 50, A/D modular converters 80 and data processing module 90.Light source 10 is arranged on first
The focal point of collimating mirror 20, it is stable for providing to be completely covered visible light wave range (380nm~780nm) incident light, the
One collimating mirror 20 is used to incident light being collimated into collimated light beam, and beam splitter 30 is arranged on the output light path of the first collimating mirror 20,
Its light splitting surface, in 45 ° of angles, measuring beam is obtained for reflection of parallel beam with collimated light beam.During work, measuring beam is vertical
The surface of target exemplar 60 is incident on, the reflected beams obtained after being reflected by target exemplar 60 are arrived after being transmitted through beam splitter 30
Up to the second collimating mirror 40.Second collimating mirror 40 is used to the reflected beams converging to micro spectrometer 50, and micro spectrometer 50 is used for
The light intensity of the reflected beams is detected, the analog signal that A/D modular converters 80 are used to measure micro spectrometer 50 is converted to digital letter
Number and export to data processing module 90, data processing module 90, which is used to be calculated according to the measurement result of micro spectrometer 50, to be obtained
The thickness of tested sample.
In one embodiment of the invention, light source 10 is halogen tungsten lamp light source, deuterium lamp light source or xenon source, and it is used as point
Light source is integrated into portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS.The diverging light that light source 10 is sent is collimated into collimated light by the first collimating mirror 20, from
And facilitate the topology layout of portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS, and the measurement spot size being irradiated on target exemplar 60 is by the first collimation
Mirror 20 is determined.
In one embodiment of the invention, above-mentioned portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS also includes light source power supply module 100, liquid crystal
Display screen 110 and general supply 120.Light source power supply module 100 is used for the power supply that 5V-1A is provided for light source 10, A/D modular converters 80
It is additionally operable to provide driving power supply for micro spectrometer 50 simultaneously, general supply 120 is used to provide for whole portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS
Power supply support, maintain it to run well, LCDs 110 be used for show final measurement, while also serve as user with
Interactive interface between portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS, micro spectrometer 50 is used at shore pine C10988MA micro spectrometers, data
Reason module 90 is Mini2440 development boards, is a kind of ARM9 development boards, its not only implant data Processing Algorithm, while also carrying behaviour
Make system and hardware controls program, for controlling light source 10, micro spectrometer 50 and LCDs 110, and store miniature
The measurement data of spectrometer 50.
The focal length of first collimating mirror 20 and the second collimating mirror 40 is roughly the same in certain spectral region, to ensure in measurement
Required spectral region interior energy color difference eliminating effect.The semi-transparent semi-reflecting characteristic of beam splitter 30 is that the optical path of the present invention can collect
Into and simplify key element, its transflection ratio about 1:1, or 6:4 etc..
Above-mentioned portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS integration packaging is obtained into structure as shown in Figure 2, LCDs 110 is arranged on
On the package casing of portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS.The measurement end face of portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS is vertical with measuring beam, during measurement,
Target exemplar is attached on measurement end face.In one embodiment of the invention, above-mentioned portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS also includes
Multiple (such as 3) are evenly distributed on the infrared distance sensor 70 on the measurement end face of the portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS, for examining
Survey whether target exemplar is uniformly attached on measurement end face, so that it is guaranteed that target exemplar is vertical with measuring beam.
It is thin that above-mentioned portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS is applied to the various isotropism such as plated film, thin polymer film, flat board in wafer
The thickness measure of film, it has two kinds of mode of operations, and one is the reflectance spectrum of monitoring objective exemplar, and two be the film for measuring tested sample
It is thick.
In the first operational mode, light source 10 is opened, target exemplar is placed on measurement end face, LCDs 110
On will show the reflection spectrum curve for the target exemplar that micro spectrometer 50 is detected in real time.Because light source is provided certainly
Right light (white light), reflection spectrum curve directly reflects the height of target exemplar reflectivity under each wavelength, thus can be qualitative
Analyze the color of sample surface.
In a second mode of operation, the thickness of measurement tested sample comprises the following steps：
(1) light intensity I is measured using micro spectrometer 50 under conditions of the closing of light source 10b(λ)。
Specifically, light source 10 is controlled using Mini2440 development boards 90, it is not lighted, so actually only measure ring
Veiling glare in border is entered in optical path by the measurement port of portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS, finally enters micro spectrometer
In, micro spectrometer detection obtains light intensity value, and this light intensity value not only includes the veiling glare light intensity value in measuring environment, in addition to
The dark noise value of micro spectrometer itself, so in data processing being eliminated the measured value as dark noise.
Balzed grating, in micro spectrometer 50 has light splitting function, can be by the visible optical dispersion received in the optical path
Into the light of different wave length, while the CCD in micro spectrometer 50 can receive the light of these different wave lengths, and in certain product
The lower output electric signal corresponding with each wavelength light intensity between timesharing.
(2) light source 10 is opened, master body is placed in the light path of measuring beam, makes it vertical with measuring beam (i.e.
Master body is uniformly attached on measurement end face), utilize the reflective light intensity I of the measurement standard exemplar of micro spectrometer 50r(λ)。
Specifically, it is placed in master body is parallel on the measurement end face of portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS, due to portable thin
As far as possible using the positioning of various positioning methods and each optical component of installation and debugging in the structure design of film calibrator, so in reality
The machinery positioning error of these optical components is not considered further that in measurement process, it is thus regarded that measuring beam is perpendicular to Portable membrane
The measurement end face of thick instrument, it is possible thereby to using three infrared distance sensor examination criterias for being distributed in measurement end face diverse location
Whether sample surface is perpendicular to measuring beam, and this is the precondition for being capable of accurate measurement standard exemplar reflected light intensity values.It is incident
Light reflexes to master body surface by 45 ° of light splitting surfaces of beam splitter, and reflected light enters miniature light by the transmission effect of beam splitter
In spectrometer, and received and detected by micro spectrometer, so that the reflected light intensity values of the master body are stored in Mini2440 exploitations
In the memory of plate, and it is used as subsequent treatment.
(3) tested sample is placed in the light path of measuring beam, makes it vertical with measuring beam (i.e. that tested sample is equal
It is even to be attached on measurement end face), the reflective light intensity I of tested sample is measured using micro spectrometer 50s(λ)。
For the measurement of the reflected light intensity values of tested sample, its operating process and the reflected light intensity values of measurement standard exemplar are
The same.It is placed in tested sample is parallel on the measurement end face of portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS, is detected by infrared distance sensor
Whether tested sample surface is perpendicular to incident light, then using the incident light irradiation tested sample surface of covering visible light wave band,
And the light intensity value of reflected light is measured using micro spectrometer.The light intensity value of the reflected light is also stored in Mini2440 development boards
In memory, and it is used as subsequent treatment.
(4) I is utilizedbThe reflective light intensity I of (λ), master bodyrThe reflective light intensity I of (λ) and tested samples(λ), is calculated to be measured
The ratio between actual reflectance of exemplar and master bodyWherein, λ is optical wavelength.
(5) the ratio between the actual reflectance of tested sample and master body f is utilized1(λ) calculates the thickness for obtaining tested sample
t。
Specifically, the ratio between the theoretical reflectance rate of tested sample and master body f is calculated0(λ t), and then tries to achieve tested sample
Thickness t so thatMinimum, wherein, λ1For the lower limit of visible wavelength, λ2For
The upper limit of visible wavelength.
Below with the Air/SiO shown in Fig. 32Exemplified by/Si thin-skin models, SiO is calculated2The theoretical reflectance rate of film.
Make air, SiO2Refractive index with Si is respectively N0、N1And N2, SiO2Thickness be t.In general, SiO2Film
Absorptivity to light is poor, and incident light will be in air/SiO2Film interface and SiO2Reflected on film/Si substrate interfaces,
Main beam and the second light beam are designated as respectively, can interfere phenomenon between them.Make the phase between main beam and the second light beam
Difference is α, then has：
In above-mentioned portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS, measurement light impinges perpendicularly on SiO2Film surface, then only needing will be such as Fig. 3
Shown all angles are entered as 0 °, that is, incidence angle, the SiO for having measurement light2The refraction in refraction angle and Si substrates in film layer
Angle θ0、θ1And θ2Respectively：
θ0=θ1=θ2=0
In conjunction with modeling formula of the Fresnel to thin-skin model, SiO can be obtained2Film is to p light and the amplitude reflection of s light
Coefficient r012,pAnd r012,sRespectively：
Further calculate and obtain SiO2Film is to p light and the reflectivity R of s lightpAnd RsRespectively：
Rp=| r012,p|2
Rs=| r012,s|2
Above-mentioned formula is all that Fresnel describes reflex of the membrane structure to polarised light, but is surveyed in above-mentioned portable film
In thick instrument, incident light and emergent light are non-polarized light, then have SiO2The reflectivity of film is：
Rn=(Rp+Rs)/2
RnAs SiO2The theoretical reflectance rate of film.The ratio between and then obtain the theoretical reflectance rate of tested sample and master body
f0(λ t) is RnThe ratio between with the reflectivity of master body (being known quantity).
In theoretical model, the reflectivity and film thickness of master body are known, the reflectivity of tested sample and thin
Film thickness is unknown.The ratio between the ratio between theoretical reflectance rate of tested sample and master body and actual reflectance are two horizontal strokes respectively
Coordinate be wavelength ordinate be ratio function curve.As shown in figure 4, by theoretical model, at the beginning of given tested sample thickness
Value t0Under conditions of, calculate the ratio between the theoretical reflectance rate of tested sample and correction exemplar f0(λ,t0), and then MSE is obtained, constantly
Adjust t0Value so that MSE value is minimum, now corresponding t0Value is the tested sample thickness that calibrator is measured.
In above-mentioned film thickness measuring method, measurement exemplar twice is needed in measurement process each time, and obtain three groups of light intensity
Measured value, first group be veiling glare light intensity value in environment and spectrometer itself dark noise, second group is master body can
The reflected light intensity values seen under optical wavelength, the 3rd group is the reflected light intensity values of tested sample at visible wavelengths.It is above-mentioned portable
THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS can not directly measure light intensity of incident light Ii(λ), therefore pass through the reflection for the exemplar for measuring two kinds of different-thickness
Light intensity, and ratio method is utilized by Ii(λ) is eliminated, and this is also that the cause of correction exemplar must be measured in the above method, so as to obtain
The ratio between actual reflectance of tested sample and master bodyThis is that above-mentioned portable film is surveyed
The theoretical model of thick instrument.
Correspondence algorithm is realized and then encapsulated into Mini2440 development boards with program language, while in Mini2440 exploitations
Main program is implanted into plate and realizes the subprogram of each corresponding function.In this way, when use of the user by portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS
Trigger in use, portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS just can start work at family interface.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, it is not used to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the invention etc., it all should include
Within protection scope of the present invention.
Claims (3)
1. a kind of method that portable THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS carries out film thickness measuring, it is characterised in that the measuring method is based on just
Take formula THICKNESS GAUGE FOR THE MEASUREMENT OF THIN FOILS, including light source, the first collimating mirror, beam splitter, the second collimating mirror, micro spectrometer, A/D modular converters and
Data processing module；
The light source is arranged on the focal point of first collimating mirror, and stable for providing can be completely covered visible light wave range
Incident light, first collimating mirror is used to the incident light being collimated into collimated light beam, and the beam splitter is arranged on described first
On the output light path of collimating mirror, its light splitting surface, in 45 ° of angles, is surveyed with the collimated light beam for reflecting the collimated light beam
Measure light beam；
During work, the measuring beam vertical incidence by master body or treats test sample on the surface of master body or tested sample
Obtained the reflected beams transmit through the beam splitter and reach second collimating mirror after going out after part reflection；
Second collimating mirror is used to the reflected beams converging to the micro spectrometer, and the micro spectrometer is used to visit
The light intensity of the reflected beams is surveyed, the analog signal that the A/D modular converters are used to measure the micro spectrometer is converted to
Data signal is simultaneously exported to the data processing module, and the data processing module is used for the measurement according to the micro spectrometer
As a result the thickness for obtaining tested sample is calculated；
The measuring method comprises the following steps：
(1) light source is closed, light intensity I is measured using micro spectrometerb(λ)；
(2) light source is opened, master body is placed in the light path of measuring beam, makes it vertical with measuring beam, using miniature
The reflective light intensity I of spectrometer measurement master bodyr(λ)；
(3) tested sample is placed in the light path of measuring beam, makes it vertical with measuring beam, measured using micro spectrometer
The reflective light intensity I of tested samples(λ)；
(4) I is utilizedbThe reflective light intensity I of (λ), master bodyrThe reflective light intensity I of (λ) and tested samples(λ), calculates tested sample
The ratio between with the actual reflectance of master bodyWherein, λ is optical wavelength；
(5) the ratio between the actual reflectance of tested sample and master body f is utilized1(λ) calculates the thickness t for obtaining tested sample, specifically
Calculation procedure it is as follows：Calculate the ratio between the theoretical reflectance rate of tested sample and master body f0(λ t), and then tries to achieve tested sample
Thickness t so thatValue is minimum, wherein, λ1For the lower limit of visible wavelength, λ2For
The upper limit of visible wavelength, in the given tested sample thickness initial value t0Under conditions of, constantly adjust t0Value so that MSE's
Value is minimum, now corresponding t0Value is the tested sample thickness t that calibrator is measured,
Wherein, the ratio between theoretical reflectance rate of tested sample and master body f0(λ, computational methods t) are as follows：
The theoretical reflectance rate of the tested sample is Rn=(Rp+Rs)/2, RpWith RsRespectively described tested sample film is to polarization
The reflectivity of light p light and s light；The theoretical reflectance rate of the master body is known quantity.
2. measuring method as claimed in claim 1, it is characterised in that the light source is halogen tungsten lamp light source, deuterium lamp light source or xenon
Lamp source.
3. measuring method as claimed in claim 1 or 2, it is characterised in that its measurement end face is vertical with the measuring beam, also
Including multiple infrared distance sensors being evenly distributed on the measurement end face, it is for examination criteria exemplar or tested sample
It is no to be uniformly attached on the measurement end face, so that it is guaranteed that master body or tested sample are vertical with the measuring beam.
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| CN109187376B (en) * | 2018-09-17 | 2021-06-18 | 深圳市三束镀膜技术有限公司 | Full-range object surface spectral reflectivity test method |
| CN109470154B (en) * | 2018-12-26 | 2020-11-06 | 武汉颐光科技有限公司 | Film thickness initial value measuring method suitable for spectrum ellipsometer |
| CN109931894B (en) * | 2019-03-26 | 2021-02-02 | 电子科技大学 | Method for analyzing thickness of surface oxide layer of NiFe or FeMn film |
| CN110261333B (en) * | 2019-06-04 | 2022-03-25 | 暨南大学 | Micro spectrum test system and test method |
| CN111121652B (en) * | 2019-12-26 | 2022-04-19 | 武汉颐光科技有限公司 | Optical microscopic film thickness meter capable of realizing local measurement |
| CN112362592A (en) * | 2020-10-30 | 2021-02-12 | 华中科技大学 | Polarization reflection measurement system and detection method thereof |
| CN112880574B (en) * | 2021-01-08 | 2023-02-03 | 上海精测半导体技术有限公司 | Film thickness measuring method |
| CN113267130B (en) * | 2021-06-11 | 2022-08-05 | 华中科技大学 | Line scanning film thickness measuring system |
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| CN101459094B (en) * | 2007-12-13 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | Method for measuring thickness of hemi-spherical granule polycrystalline silicon layer |
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2015
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