JP2021002588A - Semiconductor device, semiconductor element mounting substrate, and manufacturing method thereof - Google Patents

Abstract

To provide a configuration that can heat a minute die pad by induction heating, can be improved in mounting density, and has a high degree of freedom in wiring design on a substrate.SOLUTION: A semiconductor device includes a semiconductor element, and a substrate on which the semiconductor element is mounted, and a metal pattern is arranged on the surface of the substrate. The metal pattern includes a die pad in which the semiconductor element is die-bonded by an adhesive layer, and an annular pattern, and the die pad and the annular pattern are connected to each other. As a result, the annular pattern can be heated by induction heating, and the heat can be conducted to the die pad for heating.SELECTED DRAWING: Figure 1

Description

The present invention relates to a semiconductor device in which minute electronic circuit components such as semiconductor elements are mounted on a substrate.

When mounting electronic components such as chip resistors and semiconductor elements such as semiconductor diodes and LEDs on a substrate, solder is sandwiched between the electrodes of the substrate and the components to be mounted such as electronic components and semiconductor elements are mounted. After that, a procedure is used in which the solder is melted by heating and the electrode and the mounted component are joined by the solder. At this time, in order to heat the solder, a method of heating the substrate with a hot plate or the like is used.

Further, Patent Document 1 proposes a method of heating a metal material by induction heating when joining a die having solder on the back surface onto a metal material provided on a substrate made of a non-metal material. .. According to the induction heating, the heating of the metal material is intensively heated, and the heating to the non-metal material is only heat conduction from the metal material, and the damage due to the heat to the non-metal material can be reduced.

Japanese Unexamined Patent Publication No. 2005-244228

In joining semiconductor devices using induction heating as in Patent Document 1, it is desired to improve the heating efficiency of metal materials, reduce damage to non-metal materials, and improve the reliability of semiconductor devices. There is. In particular, when joining semiconductor elements using induction heating, it is desired to improve the heating efficiency of the semiconductor element mounting region (die pad) among the metal materials.

A first object of the present invention is to provide a configuration of a semiconductor device capable of efficiently heating a minute die pad by induction heating.

A second object of the present invention is a metal material having a role other than wiring, such as a semiconductor device having a substantially ring-shaped metal pattern having a role of regulating wet spread of a sealing resin covering a semiconductor element. It is an object of the present invention to provide a configuration of a semiconductor device capable of efficiently heating a die pad by induction heating also in the semiconductor device provided with the above.

In order to achieve the above object, the semiconductor device of the first aspect of the present invention includes a semiconductor element and a non-metal substrate on which the semiconductor element is mounted, and a metal pattern is arranged on the surface of the substrate. There is. The metal pattern has a die pad in which a semiconductor element is die-bonded by an adhesive layer and an annular pattern, and the die pad and the annular pattern are connected to each other.

Further, the semiconductor device according to the second aspect of the present invention has a semiconductor element and a substrate on which the semiconductor element is mounted, and on the surface of the substrate, a die pad in which the semiconductor element is die-bonded by an adhesive layer and a die pad. It is provided with an annular pattern arranged so as to surround the. Slits are formed in the annular pattern and are discontinuous in the circumferential direction.

According to the present invention, using the phenomenon that an electric current easily flows through an annular pattern found by the inventors by induction heating, the annular pattern is heated by induction heating to guide heat to a die pad, or what is a die pad? A minute die pad can be efficiently heated by forming a discontinuous configuration in the circumferential direction in which a current does not flow in a non-continuous annular pattern.

(A) to (d) are a top view, a cross-sectional view, a bottom view, and a perspective view of the semiconductor device of the first embodiment. The explanatory view which shows the state which performs the induction heating of Embodiment 1. (A) to (c) are a top view of the semiconductor device of the second embodiment, a top view of the cavity mounted, and a perspective view of the cavity mounted, respectively. It is a top view of the semiconductor device of Embodiment 3. (A) and (b) are a top view of the semiconductor device of the fourth embodiment and a top view of the cavity mounted. (A) to (g) are diagrams showing a manufacturing process of the semiconductor device of the fourth embodiment. (A) and (b) are a top view and a perspective view of the semiconductor device of the fifth embodiment.

A semiconductor device according to an embodiment of the present invention will be described with reference to the drawings.

<< Embodiment 1 >>
The semiconductor device of the first embodiment will be described with reference to FIGS. 1 (a) to 1 (d). 1A to 1D are a top view, a cross-sectional view of AA', a bottom view, and a perspective view of the semiconductor device, respectively.

The semiconductor device of FIG. 1 includes a semiconductor element 1 and a substrate 2 on which the semiconductor element 1 is mounted.

The surface of the substrate 2 is provided with a metal pattern 3 including a die pad 3a and an annular pattern 3b. The semiconductor element 1 is die-bonded to the die pad 3a by the adhesive layer 4. The die pad 3a and the annular pattern 3b are connected. Specifically, the entire die pad 3a is arranged in the inner region of the annular pattern 3b, and the die pad 3a and the annular pattern 3b are connected by a connection pattern 3c also formed on the surface of the substrate 2. There are two or more connection patterns 3c, and when two or more of the die pads 3a are connected to the annular pattern 3b, the temperature at the time of die bonding of the die pads 3a can be made uniform, which is preferable. Further, the connection pattern 3c is connected to the annular pattern 3b at equal intervals in the circumferential direction, and is connected to the outer peripheral edge of the die pad 3a at equal intervals, so that the heat of the annular pattern 3b is uniformly transferred to the die pad 3a. It is preferable because it can be used.

Here, since the semiconductor element 1 is a light emitting element and the element size is, for example, 1 mm square, the size of the die pad 3a is also a minute circle that is slightly larger than the light emitting element 1 to the extent that the light emitting element 1 can be mounted. The annular pattern 3b has a ring shape equidistant from the die pad 3a in the circumferential direction so as to surround the die pad 3a.

The adhesive layer 4 is AuSn as an example. The metal pattern 3 is formed by a metal plating layer, has a thickness of, for example, 70 μm, and has a surface layer, for example, an Au layer.

A dome-shaped sealing resin 5 for sealing the light emitting element 1 is mounted on the region surrounded by the annular pattern 3b. The shape of the edge of the dome-shaped sealing resin 5 matches the shape of the outer edge of the annular pattern 3b. Specifically, the sealing resin 5 in which the outer edge of the annular pattern 3b and the edge of the dome-shaped sealing resin 5 coincide with each other is a resin through which the light emitted by the light emitting element 1 is transmitted, for example, a silicone resin. It is composed of.

The substrate 2 is made of a non-metal material, for example, a resin substrate (for example, glass epoxy), a copper core 6 penetrating the substrate 2 is arranged under the die pad 3a, and the upper surface of the copper core 6 is formed with the die pad 3a. It is electrically connected. On the back surface side of the substrate 2, a back surface electrode 7 electrically connected to the lower surface of the copper core 6 and a wiring pattern 8 for supplying power to the back surface electrode 7 are arranged.

Further, an electrode pad 9 is arranged inside the annular pattern 3b on the upper surface of the substrate 2. Under the electrode pad 9, a through electrode 10 that is electrically connected to the electrode pad 9 and penetrates the substrate 2 is arranged. On the back surface side of the substrate 2, a back surface electrode 11 electrically connected to the through electrode 10 and a wiring 12 for supplying power to the back surface electrode 11 are arranged.

The light emitting element 1 includes a back surface electrode and a top surface electrode, the back surface electrode is connected to the die pad 3a by the above-mentioned adhesive layer 4, and the top surface electrode is connected to the electrode pad 9 by the bonding wire 13.

As a result, by supplying an electric current between the wirings 8 and 12 and the back surface electrodes 7 and 11, the electric current can be supplied to the light emitting element 1 to cause light emission. The emitted light passes through the dome-shaped sealing resin 5 and is emitted.

A die pad 15 for a Zener diode is arranged so as to overlap a part of the annular pattern 3b, and a bottom electrode of the Zener diode 14 is bonded by an adhesive layer (not shown). The top electrode of the Zener diode 14 is connected to the electrode pad 9 by a bonding wire 16.

Since the annular pattern 3b is connected to the die pad 3a by the connection pattern 3c, it has the same potential as the die pad 3a. Therefore, the Zener diode 14 is a circuit connected in parallel with the light emitting element 1 and functions as a protective element of the light emitting element 1.

<Manufacturing method>
The method of manufacturing the semiconductor device of the first embodiment will be described.

A substrate 2 on which a metal pattern 3 including a die pad 3a, an annular pattern 3b, and a connection pattern 3b is formed is prepared, for example, AuSn paste is applied as an adhesive layer on the die pad 3a, and the semiconductor element 1 is mounted. At this time, for example, AuSn paste is applied as an adhesive layer to the Zener diode die pad 15 having an annular pattern 3b, and the Zener diode 14 is mounted.

Next, as shown in FIG. 2, the substrate 2 is mounted on the support 21 designated by the stand 22 of the induction heating device, and the tip of the high-frequency convergence nozzle 24 is arranged in the vicinity of the copper core 6. When a high-frequency current is supplied to the coil 23 from the high-frequency power supply 25 in this state, the coil 23 generates a high-frequency magnetic field, and the high-frequency magnetic field is converged by the convergence nozzle 24 and supplied to the substrate 2 centering on the vicinity of the copper core 6. To.

Since the die pad 3a is arranged on the upper part of the copper core 6 and the annular pattern 3b is arranged around the die pad 3a so as to surround the die pad, a high frequency magnetic field is supplied to the die pad 3a and the annular pattern 3b. Due to the small size of the die pad 3a and the skin effect, it is difficult for an electric current to flow and it is difficult for the die pad 3a to be heated. On the other hand, since the annular pattern 3b is annular and its size is also larger than that of the die pad 3a, a current circulating along the annular pattern easily flows and is easily heated.

As a result, when the temperature of the annular pattern 3b rises, the heat of the annular pattern 3b is conducted to the die pad 3a through the connecting pattern 3c, and the die pad 3a is heated. At this time, two connection patterns 3c are arranged, and since the connection position to the die pad 3a is symmetrical (180 degrees), heat is conducted from two places symmetrical to the die pad 3a and the heat is uniformly heated. ..

By heating the die pad 3a, the AuSn paste which is the adhesive layer 4 is heated, AuSn eutectic is formed, and the die pad 3a and the back electrode of the light emitting element 1 are joined by AuSn eutectic.

At the same time, since the Zener diode die pad 15 on the annular pattern 3b is also heated, the Zener diode 14 and the die pad 15 are also EuSn eutectic bonded.

Next, the upper surface electrode of the light emitting element 13 and the electrode pad 9 are connected by the bonding wire 13. Further, the upper surface electrode of the Zener diode 14 and the electrode pad 9 are connected by a bonding wire 16.

Next, when the uncured sealing resin (silicone resin) is dropped inside the annular pattern (above the light emitting element 1), the uncured sealing resin wets and spreads, and the edge reaches the outer peripheral edge of the annular pattern. Then, due to the surface tension, it does not spread any more and stops. Then, by curing the sealing resin, the dome-shaped raised sealing resin 5 can be formed.

As described above, in the present embodiment, utilizing the phenomenon that an electric current easily flows through the annular pattern 3b found by the inventors by induction heating, the annular pattern 3b is heated by induction heating and the heat is transferred to the die pad 3a. By guiding to, the minute die pad 3a can be efficiently heated. As a result, the light emitting element 1 can be mounted on the die pad 3a.

When the semiconductor device was actually manufactured by the manufacturing method of the present embodiment, the bonding layer after bonding did not contain voids, and was in a good bonding state with high bonding strength and low electrical resistance.

Since the inner region of the annular pattern 3b is open, the die pad 3a can be arranged inside, and the mounting density can be improved as compared with the case of using a pattern on a plane filled to the center.

Further, by arranging the die pad 3a in the center of the annular pattern 3b and arranging the wiring on the back surface side using a copper core or a through electrode, the restriction on the wiring can be reduced and the degree of freedom in design is high. ..

Further, as described above, the annular pattern 3b also has an advantage that it can be used in combination with the pattern used for stopping the sealing resin by surface tension.

In the present embodiment, a light emitting element is used as the semiconductor element 1, but it is of course possible to use a semiconductor element that does not emit light or a minute element such as a chip resistor or a chip capacitor as the element 1.

Further, the substrate 2 is not limited to a resin substrate in which glass fibers such as glass epoxy are impregnated with a resin such as epoxy resin, and a resin substrate containing only a resin such as polyimide or a ceramic substrate can be used. is there.

The adhesive layer 4 can be composed of not only an AuSn eutectic material but also a solder other than AuSn and a sintered bonding material using nanoparticles such as Au.

<< Embodiment 2 >>
The semiconductor device of the second embodiment will be described with reference to FIGS. 3A to 3C.

The semiconductor device of the second embodiment has the same configuration as the device of the first embodiment, but differs from the first embodiment in that the shape of the annular pattern 3b is not a circular shape but a rectangular circular shape.

Similar to the semiconductor device of the first embodiment, the semiconductor device of the second embodiment utilizes the phenomenon that an electric current easily flows through the annular pattern 3b by induction heating, and heats the annular pattern 3b by induction heating to heat the die pad. By guiding to 3a, the minute die pad 3a can be efficiently heated. As a result, the light emitting element 1 can be mounted on the die pad 3a.

In addition, as shown in FIG. 3B, the cavity 31 may be arranged on the annular pattern 3b. Further, as shown in FIG. 3C, the inside of the cavity 31 may be sealed with the resin 32.

<< Embodiment 3 >>
The semiconductor device of the third embodiment will be described with reference to FIG.

The semiconductor device of FIG. 4 is different from the first embodiment in that it has a plurality of die pads 3a and is directly connected to the annular pattern 3b without a connection pattern. The electrode pad 9 is arranged in the center of the annular pattern 3b.

In the semiconductor device of the third embodiment, a plurality of die pads 3a can be heated at the same time, and a plurality of semiconductor elements 1 can be bonded at the same time.

Other configurations, manufacturing processes, and effects are the same as those of the semiconductor device of the first embodiment.

<< Embodiment 4 >>
The semiconductor device of the fourth embodiment will be described with reference to FIGS. 5A and 5B.

In the semiconductor device of FIG. 5A, a part of the die pad 3a is arranged so as to overlap the annular pattern 3b, and the annular pattern 3b is cut and divided together with the substrate 2. It is different from the first form. Other configurations are the same as in the first embodiment. Further, as shown in FIG. 5B, it is also possible to mount the cavity 31 around the substrate 2 and to have a structure in which the inside of the cavity 31 is sealed with the resin 32.

The manufacturing process of the semiconductor device of FIG. 5 (b) will be described with reference to FIGS. 6 (a) to 6 (g).

First, as shown in FIG. 6A, a semiconductor element mounting substrate is prepared in which a plurality of metal patterns 3 arranged so that the die pads 3a overlap a part of the annular pattern 3b are arranged vertically and horizontally. The substrate for mounting a semiconductor element is configured as an aggregate substrate for collectively manufacturing a plurality of semiconductor devices. In the post-process, a cutting line for cutting into a plurality of semiconductor devices is planned between the die pads 3a. The individual annular patterns 3b are arranged over the substrates for adjacent semiconductor devices so as to overlap on the cutting line.

Next, as shown in FIG. 6B, a cavity 31 having a plurality of openings is mounted on the substrate 2. The die pad 3a is located at the center of the opening of the cavity 31.

As shown in FIG. 6C, an adhesive layer is arranged by applying AuSn paste or the like on the die pad 3a, and the semiconductor element 1 is mounted. The annular pattern 3b is heated by induction heating to conduct heat to the die pad 3a, melt AuSn, and bond the semiconductor element 1 to the die pad 3a. This step is as described in the first embodiment. The plurality of annular patterns 3b may be heated by supplying a high-frequency magnetic field all at once, or may be heated one by one.

As shown in FIG. 6D, the upper surface electrode of the semiconductor element 1 and the adjacent annular pattern 3b are connected by the bonding wire 13.

As shown in FIG. 6E, the opening of the cavity 31 is sealed with the sealing resin 32.

Finally, as shown in FIG. 6 (f), the cavity 31 and the substrate 2 are cut and individualized at the four sides around the opening. As a result, the annular pattern 3b on the substrate 2 is cut as shown in FIG. 6 (g), and the semiconductor device shown in FIG. 5 (b) can be manufactured.

<< Embodiment 5 >>
The semiconductor device of the fifth embodiment will be described with reference to FIGS. 7 (a) and 7 (b).

The fifth embodiment is different from the first to fourth embodiments, and is based on the phenomenon that an electric current easily flows through the annular pattern by induction heating. By adopting a configuration in which an electric current does not flow through the annular pattern, a minute die pad is efficiently heated. To do.

That is, as shown in FIGS. 7A and 7B, the semiconductor device includes a semiconductor element 1 and a substrate 2 on which the semiconductor element 1 is mounted. The surface of the substrate 2 is provided with a die pad 3a and an annular pattern 3b arranged so as to surround the die pad 3a. The semiconductor element 1 is die-bonded to the die pad 3a by an adhesive layer.

Here, in the present embodiment, the slit 71 is formed in the annular pattern 3b, and the shape is discontinuous in the circumferential direction.

As a result, when a high-frequency magnetic field is applied to induce and heat the die pad 3a as shown in FIG. 2, the annular pattern 3b is discontinuous in the circumferential direction, so that no circumferential current flows and the supplied high-frequency magnetic field is used for the die pad 3a. Can be concentrated and supplied only to. Therefore, the die pad 3a can be heated by induction heating, and the adhesive layer can be melted to bond the semiconductor element 1 to the die pad 3a.

The width of the slit 71 is set to a width at which the uncured resin 5 does not flow out.

As a result, even when the uncured sealing resin 5 is dropped and spread by the same process as in the first embodiment, it is stopped by surface tension at the outer edge of the annular pattern 3b and sealed without being affected by the slit 71. The stop resin 5 can be raised in a dome shape.

Other configurations and other manufacturing processes are the same as those in the first embodiment.

When the semiconductor device was actually manufactured by the manufacturing method of the fifth embodiment, the bonded layer after bonding did not contain voids, and was in a good bonding state with high adhesive strength and low thermal resistance.

The semiconductor device of each of the above-described embodiments can be used as an LED lighting device or the like.

Three first to third samples were prepared for the substrate 2 provided with the metal pattern 3, and the heating state of the die pad 3a on the substrate 2 was evaluated.

The first sample corresponds to the first embodiment, and the second sample corresponds to the fifth embodiment. The third sample has a configuration in which the metal pattern 3 of the fifth embodiment is modified without the slit 71.

For the evaluation of the heated state, AuSn paste for confirming the temperature rise on the metal pattern 3 is applied to an appropriate place on the metal pattern 3, a high frequency magnetic field is applied to each sample with a high frequency coil, and AuSn The molten state of the paste was confirmed.

In the first sample, AuSn paste was applied on the die pad 3a, the intersection of the annular pattern 3b and the connection pattern 3c, the electrode pad 9, and the Zener diode die pad 15.

In the second sample, AuSn paste was applied on the die pad 3a and the annular pattern 3b.

In the third sample, AuSn paste was applied on the die pad 3a and the annular pattern 3b.

As a result, in the first sample, when a high-frequency magnetic field having a high-frequency electric energy of 2 kW · s was applied, the die pad 3a, the intersection of the annular pattern 3b and the connection pattern 3c, and the AuSn paste on the Zener diode die pad 15 were found. Although it melted, the AuSn paste on the electrode pad 9 did not melt.

Further, in the second sample, when a high-frequency magnetic field having a high-frequency electric energy of 4.05 kW · s was applied, the AuSn paste on the die pad 3a melted, but the AuSn paste on the annular pattern 3b did not melt.

Further, in the third sample, when a high-frequency magnetic field having a high-frequency electric energy of 1.95 kW · s was applied, the AuSn paste on the die pad 3a did not melt, but the AuSn paste on the annular pattern 3b melted.

Further, the output of the high frequency coil and the application time were changed to confirm the first to third samples.

In the first sample, it was confirmed that the AuSn paste on the annular pattern 3b was first melted, and then the AuSn paste on the die pad 3a was melted. It is considered that the annular pattern 3b is heated and transferred to the die pad 3a.

In the second sample, AuSn was unmelted only by evaporation of the flux component at the electric energy of 2.49 kW · s, but melting could be confirmed at the electric energy of 4.05 kW · s. Since the annular pattern 3b has the slit 71, it does not play the role of the secondary coil, and it is considered that the die pad 3a is preferentially heated.
As described above, it was confirmed that the AuSn paste on the die pad 3a in the first sample had a power amount of 2 kW · s, and the AuSn paste on the die pad 3a in the second sample had a power amount of 4.05 kW · s.

On the other hand, in the third sample, the AuSn paste on the die pad 3a did not melt even when the substrate 2 around the annular pattern 3b was discolored, and the AuSn paste on the die pad 3a was not melted even if the heating was performed by increasing the amount of high frequency power. When the output was increased until the paste was melted, the annular pattern 3b was peeled off.

From these facts, it was confirmed that the die pad 3a was efficiently heated in the first sample and the second sample. Further, it was confirmed that the first sample has a configuration capable of heating the die pad 3a more efficiently than the second sample.

1 ... semiconductor element (light emitting element), 2 ... substrate, 3 ... metal pattern, 3a ... die pad, 3b ... annular pattern, 3c ... connection pattern, 4 ... adhesive layer, 5 ... sealing resin, 6 ... copper core, 7 ... , Backside electrode, 8 ... Wiring pattern, 9 ... Electrode pad, 10 ... Through electrode, 11 ... Backside electrode, 12 ... Wiring pattern, 13 ... Bonding wire, 14 ... Zener diode, 15 ... Zener diode die pad, 16 ... Bonding wire

Claims (13)

It has a semiconductor element and a substrate made of a non-metal on which the semiconductor element is mounted.
A metal pattern is arranged on the surface of the substrate.
The metal pattern is a semiconductor device having a die pad in which the semiconductor element is die-bonded by an adhesive layer and an annular pattern, and the die pad and the annular pattern are connected to each other. The semiconductor device according to claim 1, wherein the die pad as a whole is arranged in a region inside the annular pattern, and a connecting pattern for connecting the die pad and the annular pattern is arranged between the die pad and the annular pattern. A semiconductor device characterized by being The semiconductor device according to claim 1, wherein the die pad is arranged so as to partially overlap the annular pattern. The semiconductor device according to claim 2, wherein the semiconductor element is a light emitting element, and a dome-shaped resin for sealing the light emitting element is mounted inside the annular pattern of the dome-shaped resin. A semiconductor device characterized in that the edge shape matches the shape of the annular pattern. The semiconductor device according to claim 2 or 4, wherein the connection pattern connects two or more places of the die pad to the annular pattern. It has a semiconductor element and a substrate on which the semiconductor element is mounted.
The surface of the substrate is provided with a die pad in which the semiconductor element is die-bonded by an adhesive layer, and an annular pattern arranged so as to surround the die pad.
A semiconductor device characterized in that a slit is formed in the annular pattern and is discontinuous in the circumferential direction. The semiconductor device according to claim 6, wherein the width of the slit is set to a width at which the uncured resin does not flow out.
A semiconductor device characterized in that a dome-shaped resin that seals the semiconductor element is mounted inside the annular pattern, and the edge shape of the dome-shaped resin matches the shape of the annular pattern. A substrate made of non-metal and
With a metal pattern formed on the surface of the substrate,
The metal pattern has a semiconductor element mounting die pad and an annular pattern, and the semiconductor element mounting substrate is characterized in that the die pad and the annular pattern are connected to each other. The substrate includes a plurality of die pads for mounting the semiconductor element.
The substrate is provided with a cutting line between a plurality of die pads for mounting the semiconductor element.
The substrate for mounting a semiconductor element according to claim 8, wherein the annular pattern is arranged so as to overlap the cutting line. A step of mounting a semiconductor element on a die pad of a substrate made of a non-metal having a metal pattern including a die pad and an annular pattern connected to the die pad with an adhesive layer sandwiched between the die pads.
The present invention includes a step of irradiating at least the annular pattern with a high-frequency magnetic field for induction heating, conducting the heat generated in the annular pattern to the die pad to heat the adhesive layer, and joining the die pad and the semiconductor element. A method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device according to claim 10, wherein an uncured sealing resin is dropped inside the annular pattern after the step of joining the semiconductor elements, and the edge of the sealing resin is the said. A method for manufacturing a semiconductor device, which further comprises a step of wetting and spreading until an annular pattern is reached and then curing. A semiconductor of a substrate having a die pad and a metal pattern formed so as to surround the die pad and having a slit partially formed and a circular pattern discontinuous in the circumferential direction, with an adhesive layer sandwiched on the die pad. The process of mounting the element and
A semiconductor device comprising a step of heating the adhesive layer with heat generated in the die pad by irradiating the die pad with a high-frequency magnetic field and inducing heating to join the die pad and the semiconductor element. Manufacturing method. The method for manufacturing a semiconductor device according to claim 12, wherein after the step of joining the semiconductor elements, an uncured sealing resin is dropped inside the annular pattern, and the edge of the sealing resin is the said. A method for manufacturing a semiconductor device, which further comprises a step of wetting and spreading until an annular pattern is reached and then curing.