JP2020205412A - 発光デバイス、発光装置、電子機器、および照明装置 - Google Patents
発光デバイス、発光装置、電子機器、および照明装置 Download PDFInfo
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- JP2020205412A JP2020205412A JP2020098323A JP2020098323A JP2020205412A JP 2020205412 A JP2020205412 A JP 2020205412A JP 2020098323 A JP2020098323 A JP 2020098323A JP 2020098323 A JP2020098323 A JP 2020098323A JP 2020205412 A JP2020205412 A JP 2020205412A
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- light emitting
- emitting device
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- phenyl
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- 238000005286 illumination Methods 0.000 title description 2
- 239000000463 material Substances 0.000 claims abstract description 227
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 67
- 125000002524 organometallic group Chemical group 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims description 93
- 238000000862 absorption spectrum Methods 0.000 claims description 23
- BHHMPZQRVWVAAR-UHFFFAOYSA-N 7-bromo-8-methylpyrido[2,3-b]pyrazine Chemical group C1=CN=C2C(C)=C(Br)C=NC2=N1 BHHMPZQRVWVAAR-UHFFFAOYSA-N 0.000 claims description 22
- 238000010521 absorption reaction Methods 0.000 claims description 19
- 125000003373 pyrazinyl group Chemical group 0.000 claims description 18
- 238000001296 phosphorescence spectrum Methods 0.000 claims description 16
- 125000005331 diazinyl group Chemical group N1=NC(=CC=C1)* 0.000 claims description 15
- 125000004432 carbon atom Chemical group C* 0.000 claims description 12
- 125000003118 aryl group Chemical group 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 125000000714 pyrimidinyl group Chemical group 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- 229910052717 sulfur Chemical group 0.000 claims description 3
- 239000011593 sulfur Chemical group 0.000 claims description 3
- 238000012546 transfer Methods 0.000 abstract description 17
- YUFRAQHYKKPYLH-UHFFFAOYSA-N benzo[f]quinoxaline Chemical group C1=CN=C2C3=CC=CC=C3C=CC2=N1 YUFRAQHYKKPYLH-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 281
- 239000000758 substrate Substances 0.000 description 98
- -1 ytterbium Rare earth metals Chemical class 0.000 description 60
- 238000002347 injection Methods 0.000 description 56
- 239000007924 injection Substances 0.000 description 56
- 230000006870 function Effects 0.000 description 54
- 229910052757 nitrogen Inorganic materials 0.000 description 49
- 238000005401 electroluminescence Methods 0.000 description 48
- 238000000034 method Methods 0.000 description 36
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 35
- 229910052751 metal Inorganic materials 0.000 description 34
- 239000002184 metal Substances 0.000 description 34
- 150000001875 compounds Chemical class 0.000 description 33
- 230000032258 transport Effects 0.000 description 32
- 239000010408 film Substances 0.000 description 31
- 230000005525 hole transport Effects 0.000 description 28
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 25
- 238000010586 diagram Methods 0.000 description 25
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 24
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 24
- 239000007983 Tris buffer Substances 0.000 description 18
- 150000004696 coordination complex Chemical class 0.000 description 18
- 238000007740 vapor deposition Methods 0.000 description 17
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical group C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 16
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 16
- 125000001072 heteroaryl group Chemical group 0.000 description 14
- 239000011159 matrix material Substances 0.000 description 14
- XGCDBGRZEKYHNV-UHFFFAOYSA-N 1,1-bis(diphenylphosphino)methane Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)CP(C=1C=CC=CC=1)C1=CC=CC=C1 XGCDBGRZEKYHNV-UHFFFAOYSA-N 0.000 description 13
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 13
- 230000005281 excited state Effects 0.000 description 13
- 230000005284 excitation Effects 0.000 description 12
- 239000003566 sealing material Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910052741 iridium Inorganic materials 0.000 description 11
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 11
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical class C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 10
- 150000004982 aromatic amines Chemical class 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 239000003446 ligand Substances 0.000 description 10
- 238000007789 sealing Methods 0.000 description 10
- 238000003786 synthesis reaction Methods 0.000 description 10
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 125000006268 biphenyl-3-yl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C1=C([H])C(*)=C([H])C([H])=C1[H] 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 230000002950 deficient Effects 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical group C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 8
- 238000004891 communication Methods 0.000 description 8
- 150000004820 halides Chemical class 0.000 description 8
- 150000002391 heterocyclic compounds Chemical class 0.000 description 8
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 7
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical group C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 7
- 229910052783 alkali metal Inorganic materials 0.000 description 7
- 150000001340 alkali metals Chemical class 0.000 description 7
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 7
- 150000001342 alkaline earth metals Chemical class 0.000 description 7
- 239000000872 buffer Substances 0.000 description 7
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 7
- 238000000295 emission spectrum Methods 0.000 description 7
- 229910052744 lithium Inorganic materials 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 229910052761 rare earth metal Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 6
- 229910008449 SnF 2 Inorganic materials 0.000 description 6
- 125000005595 acetylacetonate group Chemical group 0.000 description 6
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 6
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 6
- TXCDCPKCNAJMEE-UHFFFAOYSA-N dibenzofuran Chemical compound C1=CC=C2C3=CC=CC=C3OC2=C1 TXCDCPKCNAJMEE-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 6
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000002096 quantum dot Substances 0.000 description 6
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 6
- 150000002910 rare earth metals Chemical class 0.000 description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 5
- 229910052792 caesium Inorganic materials 0.000 description 5
- 239000011575 calcium Substances 0.000 description 5
- 150000001716 carbazoles Chemical class 0.000 description 5
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002346 layers by function Substances 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 150000003216 pyrazines Chemical class 0.000 description 5
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 238000005160 1H NMR spectroscopy Methods 0.000 description 4
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 description 4
- ZVFQEOPUXVPSLB-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-phenyl-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 ZVFQEOPUXVPSLB-UHFFFAOYSA-N 0.000 description 4
- VDHOGVHFPFGPIP-UHFFFAOYSA-N 9-[3-[5-(3-carbazol-9-ylphenyl)pyridin-3-yl]phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC(C=2C=NC=C(C=2)C=2C=CC=C(C=2)N2C3=CC=CC=C3C3=CC=CC=C32)=CC=C1 VDHOGVHFPFGPIP-UHFFFAOYSA-N 0.000 description 4
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 4
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
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- 125000000319 biphenyl-4-yl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C1=C([H])C([H])=C([*])C([H])=C1[H] 0.000 description 4
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 4
- 229910000024 caesium carbonate Inorganic materials 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 125000004093 cyano group Chemical group *C#N 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 125000006575 electron-withdrawing group Chemical group 0.000 description 4
- 239000000284 extract Substances 0.000 description 4
- 238000004770 highest occupied molecular orbital Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 150000002503 iridium Chemical class 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 4
- 229910001947 lithium oxide Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
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- 229920000728 polyester Polymers 0.000 description 4
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 4
- 150000003230 pyrimidines Chemical class 0.000 description 4
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical group C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
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- 150000003839 salts Chemical class 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 3
- SPDPTFAJSFKAMT-UHFFFAOYSA-N 1-n-[4-[4-(n-[4-(3-methyl-n-(3-methylphenyl)anilino)phenyl]anilino)phenyl]phenyl]-4-n,4-n-bis(3-methylphenyl)-1-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 SPDPTFAJSFKAMT-UHFFFAOYSA-N 0.000 description 3
- XESMNQMWRSEIET-UHFFFAOYSA-N 2,9-dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC(C=2C=C3C=CC=CC3=CC=2)=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=C(C=3C=C4C=CC=CC4=CC=3)N=C21 XESMNQMWRSEIET-UHFFFAOYSA-N 0.000 description 3
- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 3
- VIJYEGDOKCKUOL-UHFFFAOYSA-N 9-phenylcarbazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 VIJYEGDOKCKUOL-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- YNPNZTXNASCQKK-UHFFFAOYSA-N Phenanthrene Natural products C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 3
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- DKHNGUNXLDCATP-UHFFFAOYSA-N dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile Chemical group C12=NC(C#N)=C(C#N)N=C2C2=NC(C#N)=C(C#N)N=C2C2=C1N=C(C#N)C(C#N)=N2 DKHNGUNXLDCATP-UHFFFAOYSA-N 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- KMGCVGZFTMILPV-UHFFFAOYSA-N iridium(3+);pentane-2,4-dione Chemical compound [Ir+3].CC(=O)CC(C)=O KMGCVGZFTMILPV-UHFFFAOYSA-N 0.000 description 3
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 3
- 125000003261 o-tolyl group Chemical group [H]C1=C([H])C(*)=C(C([H])=C1[H])C([H])([H])[H] 0.000 description 3
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- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
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- PJANXHGTPQOBST-VAWYXSNFSA-N trans-stilbene Chemical compound C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
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- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- QGJSAGBHFTXOTM-UHFFFAOYSA-K trifluoroerbium Chemical compound F[Er](F)F QGJSAGBHFTXOTM-UHFFFAOYSA-K 0.000 description 1
- 229910000404 tripotassium phosphate Inorganic materials 0.000 description 1
- 235000019798 tripotassium phosphate Nutrition 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- 125000001834 xanthenyl group Chemical group C1=CC=CC=2OC3=CC=CC=C3C(C12)* 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract
Description
本実施の形態では、本発明の一態様である発光デバイスについて図1を用いて説明する。なお、発光デバイスは、一対の電極間にEL層が挟まれた構造を有し、EL層は、少なくとも発光層を有し、その他に正孔(ホール)注入層、正孔(ホール)輸送層、電子輸送層、電子注入層等の機能層を適宜設けることができる。
図1は、一対の電極間に発光層を含むEL層を有する発光デバイスの一例を示す。具体的には、第1の電極101と第2の電極102との間にEL層103が挟まれた構造を有する。なお、EL層103は、例えば、第1の電極101を陽極とした場合、正孔(ホール)注入層111、正孔(ホール)輸送層112、発光層113、電子輸送層114、電子注入層115が機能層として、順次積層された構造を有する。
第1の電極101および第2の電極102を形成する材料としては、上述した両電極の機能が満たせるのであれば、以下に示す材料を適宜組み合わせて用いることができる。例えば、金属、合金、電気伝導性化合物、およびこれらの混合物などを適宜用いることができる。具体的には、In−Sn酸化物(ITOともいう)、In−Si−Sn酸化物(ITSOともいう)、In−Zn酸化物、In−W−Zn酸化物が挙げられる。その他、アルミニウム(Al)、チタン(Ti)、クロム(Cr)、マンガン(Mn)、鉄(Fe)、コバルト(Co)、ニッケル(Ni)、銅(Cu)、ガリウム(Ga)、亜鉛(Zn)、インジウム(In)、スズ(Sn)、モリブデン(Mo)、タンタル(Ta)、タングステン(W)、パラジウム(Pd)、金(Au)、白金(Pt)、銀(Ag)、イットリウム(Y)、ネオジム(Nd)などの金属、およびこれらを適宜組み合わせて含む合金を用いることもできる。その他、上記例示のない元素周期表の第1族または第2族に属する元素(例えば、リチウム(Li)、セシウム(Cs)、カルシウム(Ca)、ストロンチウム(Sr))、ユウロピウム(Eu)、イッテルビウム(Yb)などの希土類金属およびこれらを適宜組み合わせて含む合金、その他グラフェン等を用いることができる。
正孔注入層111は、陽極である第1の電極101からEL層103に正孔(ホール)を注入しやすくする層であり、有機アクセプター材料や正孔注入性の高い材料を含む層である。
正孔輸送層112は、正孔注入層111によって、第1の電極101から注入された正孔を発光層113に輸送する層である。なお、正孔輸送層112は、正孔輸送性材料を含む層である。従って、正孔輸送層112には、正孔注入層111に用いることができる正孔輸送性材料として上述した、正孔輸送性材料を用いることができる。
本発明の一態様である発光デバイスにおいて、発光層113は、発光物質(ゲスト材料)を含む層であり、発光物質を分散させる、一種または複数種の有機化合物(ホスト材料等)を有する。なお、本発明の一態様である発光デバイスにおける発光層113には、ホスト材料として特定のナフトフロピラジン骨格を有する有機化合物(好ましくは、ナフト[2’,1’:4,5]フロ[2,3−b]ピラジン骨格を有する有機化合物)を用い、ゲスト材料として、そのT1準位(TG:燐光発光物質の吸収スペクトルの吸収端から導かれるT1準位を指す)が、ある一定の範囲(好ましくは、T1準位(TG)が2.5eV以下)を満たす燐光発光物質(ジアジン骨格(ピラジン骨格またはピリミジン骨格を含む)を有する有機金属錯体を含む)を用いることが特に好ましい。また、発光層113に用いる、ホスト材料のT1準位(TH:有機化合物の燐光スペクトルの短波長側における発光端から導かれるT1準位を指す)とゲスト材料のT1準位(TG)との差(TH−TG)が下記式(1)を満たすことが好ましい。これは、効率・寿命を満たすためには、ホスト材料のT1準位(TH)はゲスト材料のT1準位(TG)よりも一定以上高い必要があるが、高すぎるとむしろ寿命を損なうことが多いという本発明者らの発見に基づいている(従来は、ホスト材料のT1準位は高ければ高いほど良いと言われているが、本発明の一態様ではそれとは異なる点に留意されたい)。なお、この観点では、TH−TGは0.3eV以下であることがより好ましい。
電子輸送層114は、第2の電極102から注入された電子を発光層113に輸送する層である。なお、電子輸送層114と第2の電極102との間には、後述する電子注入層115を有していても良い。電子輸送層114は、電子輸送性材料を有する。また、電子輸送性材料に加えて、金属、金属塩、金属酸化物、または金属錯体のいずれかを有していても良い。特にアルカリ金属またはアルカリ土類金属を有する金属錯体を用いるのが好ましい。なお、これらの金属、金属塩、金属酸化物、または金属錯体を有する場合、電子輸送層114のいずれかの領域に存在していればよく、例えば、電子輸送層114が積層構造を有する場合には、そのいずれかの層に存在していればよい。また、発光層113と接する電子輸送層114(積層構造を有する場合は、そのうちの発光層と接する層)に用いる電子輸送性材料のLUMO準位は、発光層113に用いるホスト材料のLUMO準位よりも深く(または、小さく)、かつその差が0.15eV以上0.40eV以下、または、0.20eV以上0.40eV以下が好ましく、0.20eV以上0.35eV以下がより好ましい。
電子注入層115は、第2の電極(陰極)102からの電子の注入効率を高めるための層であり、陰極102の材料の仕事関数の値と、電子注入層115に用いる材料のLUMO準位の値とを比較した際、その差が小さい(0.5eV以下)材料を用いることが好ましい。従って、電子注入層115には、リチウム、セシウム、フッ化リチウム(LiF)、フッ化セシウム(CsF)、フッ化カルシウム(CaF2)、8−(ヒドロキシキノリナト)リチウム(略称:Liq)、2−(2−ピリジル)フェノラトリチウム(略称:LiPP)、2−(2−ピリジル)−3−ピリジノラトリチウム(略称:LiPPy)、4−フェニル−2−(2−ピリジル)フェノラトリチウム(略称:LiPPP)、リチウム酸化物(LiOx)、炭酸セシウム等のようなアルカリ金属、アルカリ土類金属、またはこれらの化合物を用いることができる。また、フッ化エルビウム(ErF3)のような希土類金属化合物を用いることができる。
なお、図1(B)の発光デバイスにおける電荷発生層104は、第1の電極(陽極)101と第2の電極(陰極)102との間に電圧を印加したときに、陽極である第1の電極101側のEL層103aに電子を注入し、陰極である第2の電極102側のEL層103bに正孔を注入する機能を有する。なお、電荷発生層104は、正孔輸送性材料に電子受容体(アクセプタ)が添加された構成(P型層)であっても、電子輸送性材料に電子供与体(ドナー)が添加された構成(N型層)であってもよい。また、これらの両方の構成が積層されていても良い。また、上記P型層と、後述する電子リレー層および電子注入バッファ層のいずれか一又は両方を組み合わせて形成されていても良い。なお、上述した材料を用いて電荷発生層104を形成することにより、EL層が積層された場合における駆動電圧の上昇を抑制することができる。
本実施の形態で示した発光デバイスは、様々な基板上に形成することができる。なお、基板の種類は、特定のものに限定されることはない。基板の一例としては、半導体基板(例えば単結晶基板又はシリコン基板)、SOI基板、ガラス基板、石英基板、プラスチック基板、金属基板、ステンレス・スチル基板、ステンレス・スチル・ホイルを有する基板、タングステン基板、タングステン・ホイルを有する基板、可撓性基板、貼り合わせフィルム、繊維状の材料を含む紙、又は基材フィルムなどが挙げられる。
本実施の形態では、本発明の一態様である発光装置について説明する。なお、図2(A)に示す発光装置は、第1の基板201上のトランジスタ(FET)202と発光デバイス(203R、203G、203B、203W)が電気的に接続されてなるアクティブマトリクス型の発光装置であり、複数の発光デバイス(203R、203G、203B、203W)は、共通のEL層204を有し、また、各発光デバイスの発光色に応じて、各発光デバイスの電極間の光学距離が調整されたマイクロキャビティ構造を有する。また、EL層204から得られた発光が第2の基板205に形成されたカラーフィルタ(206R、206G、206B)を介して射出されるトップエミッション型の発光装置である。
本実施の形態では、本発明の一態様である発光装置について説明する。
本実施の形態では、本発明の一態様である発光デバイス、本発明の一態様である発光デバイスを有する発光装置を適用して完成させた様々な電子機器や自動車の一例について、説明する。なお、発光装置は、本実施の形態で説明する電子機器において、主に表示部に適用することができる。
本実施の形態では、本発明の一態様である発光装置、またはその一部である発光デバイスを適用して作製される照明装置の構成について図7を用いて説明する。
本実施例で示す発光デバイスは、図8に示すように基板900上に形成された第1の電極901上に正孔注入層911、正孔輸送層912、発光層913、電子輸送層914、電子注入層915が順次積層され、電子注入層915上に第2の電極903が積層された構造を有する。
作製した各発光デバイスの動作特性について測定した。なお、測定は室温(25℃に保たれた雰囲気)で行った。また、各発光デバイスの動作特性の結果として電流密度−輝度特性を図9、電圧−輝度特性を図10、輝度−電流効率特性を図11、電圧−電流特性を図12にそれぞれ示す。
作製した発光デバイス3の動作特性について測定した。なお、測定は室温(25℃に保たれた雰囲気)で行った。
実施例1および実施例2で用いた有機化合物、8−[(3’−ジベンゾチオフェン−4−イル)ビフェニル−3−イル]ナフト[2’,1’:4,5]フロ[2,3−b]ピラジン(略称:8mDBtBPNfpr(II))の合成方法について説明する。なお、8mDBtBPNfpr(II)の構造式を以下に示す。
まず、3−ブロモ−5−クロロピラジン−2−アミン0.92gと1−メトキシナフタレン−2−ボロン酸0.96g、2M炭酸ナトリウム水溶液11mL、トルエン22mLを、還流管を付けた三口フラスコに入れ、内部を窒素置換した。フラスコ内を減圧下で撹拌することで脱気した後、テトラキス(トリフェニルホスフィン)パラジウム(0)(略称:Pd(PPh3)4)0.10gを加え、110℃で15時間撹拌し、反応させた。
次に、上記ステップ1で得た、5−クロロ−3−(1−メトキシナフタレン−2−イル)ピラジン−2−アミン0.96gと脱水テトラヒドロフラン17mL、氷酢酸17mLを三口フラスコに入れ、内部を窒素置換した。フラスコを−10℃に冷却した後、亜硝酸tert−ブチル1.2mLを滴下し、−10℃で1時間、0℃で3時間半攪拌した。所定時間経過後、得られた懸濁液に水200mLを加え、吸引ろ過することにより、目的のピラジン誘導体を得た(黄白色固体、収量0.69g、収率81%)。ステップ2の合成スキームを下記(a−2)に示す。
次に、上記ステップ2で得た8−クロロナフト[2’,1’:4,5]フロ[2,3−b]ピラジン1.24g、3−クロロフェニルボロン酸0.81g、2M炭酸カリウム水溶液7.0mL、トルエン47mL、エタノール4.7mLを三口フラスコに入れ、内部を窒素置換した。フラスコ内を減圧下で撹拌することで脱気した後、酢酸パラジウム(II)(略称:Pd(OAc)2)0.15g、トリフェニルホスフィン0.56gを加え、90℃で11時間撹拌し、反応させた。
さらに、上記ステップ3で得た8−(3−クロロフェニル)ナフト[2’,1’:4,5]フロ[2,3−b]ピラジン1.12g、3−(4−ジベンゾチオフェン)フェニルボロン酸1.69g、リン酸三カリウム3.14g、tert−ブチルアルコール0.91g、ジエチレングリコールジメチルエーテル(略称:diglyme)27mLを三口フラスコに入れ、内部を窒素置換した。フラスコ内を減圧下で撹拌することで脱気した後、酢酸パラジウム(II)(略称:Pd(OAc)2)37mg、ジ(1−アダマンチル)−n−ブチルホスフィン(略称:CataCXium A)0.12gを加え、140℃で40時間半撹拌し、反応させた。
102 第2の電極
103 EL層
103a、103b EL層
104 電荷発生層
111、111a、111b 正孔注入層
112、112a、112b 正孔輸送層
113、113a、113b 発光層
114、114a、114b 電子輸送層
115、115a、115b 電子注入層
200R、200G、200B 光学距離
201 第1の基板
202 トランジスタ(FET)
203R、203G、203B、203W 発光デバイス
204 EL層
205 第2の基板
206R、206G、206B カラーフィルタ
206R’、206G’、206B’ カラーフィルタ
207 第1の電極
208 第2の電極
209 黒色層(ブラックマトリックス)
210R、210G 導電層
301 第1の基板
302 画素部
303 駆動回路部(ソース線駆動回路)
304a、304b 駆動回路部(ゲート線駆動回路)
305 シール材
306 第2の基板
307 引き回し配線
308 FPC
309 FET
310 FET
311 FET
312 FET
313 第1の電極
314 絶縁物
315 EL層
316 第2の電極
317 発光デバイス
318 空間
900 基板
901 第1の電極
902 EL層
903 第2の電極
911 正孔注入層
912 正孔輸送層
913 発光層
914 電子輸送層
915 電子注入層
4000 照明装置
4001 基板
4002 発光デバイス
4003 基板
4004 第1の電極
4005 EL層
4006 第2の電極
4007 電極
4008 電極
4009 補助配線
4010 絶縁層
4011 封止基板
4012 シール材
4013 乾燥剤
4015 拡散板
4200 照明装置
4201 基板
4202 発光デバイス
4204 第1の電極
4205 EL層
4206 第2の電極
4207 電極
4208 電極
4209 補助配線
4210 絶縁層
4211 封止基板
4212 シール材
4213 バリア膜
4214 平坦化膜
4215 拡散板
5101 ライト
5102 ホイール
5103 ドア
5104 表示部
5105 ハンドル
5106 シフトレバー
5107 座席シート
5108 インナーリアビューミラー
5109 フロントガラス
7000 筐体
7001 表示部
7002 第2表示部
7003 スピーカ
7004 LEDランプ
7005 操作キー
7006 接続端子
7007 センサ
7008 マイクロフォン
7009 スイッチ
7010 赤外線ポート
7011 記録媒体読込部
7012 支持部
7013 イヤホン
7014 アンテナ
7015 シャッターボタン
7016 受像部
7018 スタンド
7020 カメラ
7021 外部接続部
7022、7023 操作用ボタン
7024 接続端子
7025 バンド、
7026 マイクロフォン
7027 時刻を表すアイコン
7028 その他のアイコン
7029 センサ
7030 スピーカ
7052、7053、7054 情報
9310 携帯情報端末
9311 表示部
9312 表示領域
9313 ヒンジ
9315 筐体
Claims (9)
- 一対の電極間にEL層を有し、
前記EL層は、発光層を有し、
前記発光層は、ナフト[2’,1’:4,5]フロ[2,3−b]ピラジン骨格を有する有機化合物、および燐光発光物質を有し、
前記燐光発光物質のT1準位(TG)が2.5eV以下である発光デバイス。
(ただし、TGは、前記燐光発光物質の吸収スペクトルの吸収端から導かれるT1準位を指す。) - 一対の電極間にEL層を有し、
前記EL層は、発光層を有し、
前記発光層は、ナフト[2’,1’:4,5]フロ[2,3−b]ピラジン骨格を有する有機化合物、およびジアジン骨格を有する有機金属錯体を有する発光デバイス。 - 請求項2において、
前記ジアジン骨格は、ピラジン骨格またはピリミジン骨格のいずれか一である発光デバイス。 - 一対の電極間にEL層を有し、
前記EL層は、発光層を有し、
前記発光層は、一般式(G1)で表される第1の有機化合物、および燐光発光物質を有し、
前記燐光発光物質のT1準位(TG)が2.5eV以下である発光デバイス。
(ただし、TGは、前記燐光発光物質の吸収スペクトルの吸収端から導かれるT1準位を指す。)
(式中、Qは酸素または硫黄を表す。また、Aは分子量1000以下の基を表し、R1〜R6はそれぞれ独立に、水素、置換もしくは無置換の炭素数1乃至6のアルキル基、置換もしくは無置換の炭素数3乃至7のシクロアルキル基、または置換もしくは無置換の炭素数6乃至30のアリール基、のいずれか一を表す。) - 請求項1乃至請求項4のいずれか一において、
前記有機化合物のT1準位(TH)と前記燐光発光物質のT1準位(TG)との差が下記式(1)を満たす発光デバイス。
(ただし、TGは、前記燐光発光物質の吸収スペクトルの吸収端から導かれるT1準位を指し、THは、前記有機化合物の燐光スペクトルの短波長側における発光端から導かれるT1準位を指す。)
- 請求項1乃至請求項4のいずれか一において、
前記有機化合物のT1準位(TH)と前記燐光発光物質のT1準位(TG)との差が下記式(2)を満たす発光デバイス。
(ただし、TGは、前記燐光発光物質の吸収スペクトルの吸収端から導かれるT1準位を指し、THは、前記有機化合物の燐光スペクトルの短波長側における発光端から導かれるT1準位を指す。)
- 請求項1乃至請求項6のいずれか一に記載の発光デバイスと、
FPCと、
を有する発光装置。 - 請求項7に記載の発光装置と、
マイク、カメラ、操作用ボタン、外部接続部、または、スピーカの少なくとも一と、
を有する電子機器。 - 請求項1乃至請求項6のいずれか一に記載の発光デバイスと、
筐体、またはカバーの少なくとも一と、
を有する照明装置。
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WO2022162493A1 (ja) * | 2021-01-28 | 2022-08-04 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、電子機器、及び、表示装置の作製方法 |
WO2022229780A1 (ja) * | 2021-04-30 | 2022-11-03 | 株式会社半導体エネルギー研究所 | 発光装置および電子機器 |
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US9917257B2 (en) * | 2014-07-24 | 2018-03-13 | Duk San Neolux Co., Ltd. | Organic electronic element and an electronic device comprising it |
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CN113880884A (zh) * | 2016-04-01 | 2022-01-04 | 株式会社半导体能源研究所 | 发光元件、发光装置、电子设备及照明装置 |
US20190031673A1 (en) * | 2017-07-27 | 2019-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Organic Compound, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device |
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WO2022229780A1 (ja) * | 2021-04-30 | 2022-11-03 | 株式会社半導体エネルギー研究所 | 発光装置および電子機器 |
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