JP2020205334A - Substrate-processing method and substrate-processing device - Google Patents

Abstract

To decrease the quantity of particles depositing to a substrate.SOLUTION: A substrate-processing method according to the present disclosure comprises: a process liquid supplying step; a two-liquid supplying step; a first transfer step; and a second transfer step. The process liquid supplying step includes supplying a substrate with a process liquid. The two-liquid supplying step includes supplying the substrate with a drying liquid higher than the process liquid in volatility while supplying the process liquid to the substrate after the process liquid supplying step. The first transfer step includes transferring a location of ejecting the process liquid toward an outer periphery of the substrate in the two-liquid supplying step. The second transfer step is performed after the first transfer step, and includes transferring the location of ejecting the drying liquid toward the outer periphery of the substrate when a previously set time has elapsed from the start of supply of the drying liquid to the substrate.SELECTED DRAWING: Figure 8

Description

The present disclosure relates to a substrate processing method and a substrate processing apparatus.

As a method of drying the substrate after the cleaning treatment, the liquid remaining on the substrate is replaced with a volatile liquid by supplying a volatile liquid to the surface of the substrate, and then the substrate is dried by volatilizing the volatile liquid. The method is known.

JP-A-2015-213105

The present disclosure provides a technique capable of reducing the amount of particles adhering to a substrate.

The substrate processing method according to one aspect of the present disclosure includes a processing liquid supply step, a two-liquid supply step, a first moving step, and a second moving step. In the treatment liquid supply step, the treatment liquid is supplied to the substrate. In the two-liquid supply step, after the treatment liquid supply step, the treatment liquid is supplied to the substrate, and the drying liquid having higher volatility than the treatment liquid is supplied to the substrate. In the first moving step, in the two-liquid supply step, the discharge position of the processing liquid is moved toward the outer peripheral portion of the substrate. The second moving step is after the first moving step, and after a preset time has elapsed from the start of supply of the drying liquid to the substrate, the discharge position of the drying liquid is moved to the outer peripheral portion of the substrate. Move towards.

According to the present disclosure, the amount of particles adhering to the substrate can be reduced.

FIG. 1 is a diagram showing a configuration of a substrate processing system according to an embodiment. FIG. 2 is a diagram showing a configuration of a processing unit according to the embodiment. FIG. 3 is a flowchart showing a processing procedure of substrate processing executed by the processing unit. FIG. 4 is a diagram showing an operation example of the replacement process. FIG. 5 is a diagram showing an operation example of the replacement process. FIG. 6 is a diagram showing an operation example of the replacement process. FIG. 7 is a diagram showing an operation example of the replacement process. FIG. 8 is a diagram showing an operation example of the replacement process. FIG. 9 is a diagram showing an operation example of the replacement process. FIG. 10 is a diagram showing an operation example of the second moving step according to the modified example.

Hereinafter, the substrate processing method according to the present disclosure and the embodiment for implementing the substrate processing apparatus (hereinafter, referred to as “embodiment”) will be described in detail with reference to the drawings. It should be noted that this embodiment does not limit the substrate processing method and the substrate processing apparatus according to the present disclosure. In addition, each embodiment can be appropriately combined as long as the processing contents do not contradict each other. Further, in each of the following embodiments, the same parts are designated by the same reference numerals, and duplicate description is omitted.

Further, in each drawing referred to below, in order to make the explanation easy to understand, an orthogonal coordinate system in which the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to each other are defined and the Z-axis positive direction is the vertically upward direction is shown. In some cases. Further, the rotation direction centered on the vertical axis may be referred to as the θ direction.

<Configuration of board processing system>
FIG. 1 is a diagram showing a configuration of a substrate processing system according to an embodiment. As shown in FIG. 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

The loading / unloading station 2 includes a carrier mounting table 11 and a transport section 12. A plurality of substrates, and in the present embodiment, a plurality of carriers C for accommodating a semiconductor wafer (hereinafter referred to as wafer W) in a horizontal state are mounted on the carrier mounting table 11.

A plurality of load ports are arranged side by side on the carrier mounting table 11 so as to be adjacent to the transport unit 12, and one carrier C is mounted on each of the plurality of load ports.

The transport unit 12 is provided adjacent to the carrier mounting table 11, and includes a substrate transport device 13 and a delivery unit 14 inside. The substrate transfer device 13 includes a wafer holding mechanism for holding the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can rotate around the vertical axis, and transfers the wafer W between the carrier C and the delivery portion 14 by using the wafer holding mechanism. Do.

The processing station 3 is provided adjacent to the transport unit 12. The processing station 3 includes a transport unit 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on both sides of the transport unit 15.

The transport unit 15 includes a substrate transport device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and swivel around the vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 by using the wafer holding mechanism. I do.

The processing unit 16 performs predetermined substrate processing on the wafer W transported by the substrate transport device 17.

Further, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs that control various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.

The program may be recorded on a storage medium readable by a computer, and may be installed from the storage medium in the storage unit 19 of the control device 4. Examples of storage media that can be read by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C mounted on the carrier mounting table 11, and delivers the taken out wafer W to the delivery unit. Place on 14. The wafer W placed on the delivery section 14 is taken out from the delivery section 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.

The wafer W carried into the processing unit 16 is processed by the processing unit 16, then carried out from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier mounting table 11 by the substrate transfer device 13.

<Processing unit configuration>
Next, the processing unit 16 will be described with reference to FIG. FIG. 2 is a diagram showing the configuration of the processing unit 16 according to the embodiment.

As shown in FIG. 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a first supply unit 40, a second supply unit 50, and a recovery cup 60.

The chamber 20 houses the substrate holding mechanism 30, the first supply unit 40, the second supply unit 50, and the recovery cup 60. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a downflow in the chamber 20.

The substrate holding mechanism 30 includes a holding portion 31, a strut portion 32, and a driving portion 33. The holding unit 31 holds the wafer W horizontally. Specifically, the holding portion 31 includes a plurality of grip portions 31a, and grips the peripheral edge portion of the wafer W using the plurality of grip portions 31a. The strut portion 32 extends in the vertical direction, the base end portion is rotatably supported by the drive portion 33, and the holding portion 31 is horizontally supported at the tip portion. The drive unit 33 rotates the support unit 32 around the vertical axis. The substrate holding mechanism 30 rotates the holding portion 31 supported by the supporting portion 32 by rotating the supporting portion 32 by using the driving unit 33, thereby rotating the wafer W held by the holding portion 31. ..

The first supply unit 40 includes a rinse liquid nozzle 41, a chemical liquid nozzle 42, a first arm 43 that supports the rinse liquid nozzle 41 and the chemical liquid nozzle 42, and a first moving mechanism 44 that moves the first arm 43. ..

The rinse liquid nozzle 41 is connected to the supply line 467. The supply line 467 connects the rinse liquid nozzle 41 and the rinse liquid supply source 46. The rinse liquid supply source 46 supplies the rinse liquid to the rinse liquid nozzle 41 via the supply line 467. Here, DIW (deionized water) is used as the rinsing solution. A valve 45 is provided on the supply line 467. The valve 45 switches between discharge and non-discharge of DIW from the rinse liquid nozzle 41 to the wafer W by opening and closing the supply line 467.

The chemical solution nozzle 42 is connected to the supply line 487. The supply line 487 connects the chemical solution nozzle 42 and the chemical solution supply source 48. The chemical solution supply source 48 supplies the chemical solution to the chemical solution nozzle 42 via the supply line 487. The type of the chemical solution is not particularly limited, but for example, HF (hydrofluoric acid), SC1 (ammonia / hydrogen peroxide / water mixed solution) and the like are used. A valve 47 is provided on the supply line 487. The valve 47 switches between discharge and non-discharge of the chemical solution from the chemical solution nozzle 42 to the wafer W by opening and closing the supply line 487.

The second supply unit 50 includes a drying liquid nozzle 51, a second arm 53 that supports the drying liquid nozzle 51, and a second moving mechanism 54 that moves the second arm 53.

The drying liquid nozzle 51 is connected to the supply line 567. The supply line 567 connects the drying liquid nozzle 51 and the drying liquid supply source 56. The drying liquid supply source 56 supplies the drying liquid to the drying liquid nozzle 51 via the supply line 567. Here, IPA (isopropyl alcohol) is used as the drying liquid. The drying liquid may be a volatile solvent other than IPA, such as acetone. In addition, the drying liquid may be a liquid having a higher volatility than the rinsing liquid (DIW in this case). The supply line 567 is provided with a valve 55. The valve 55 switches between discharge and non-discharge of IPA from the drying liquid nozzle 51 to the wafer W by opening and closing the supply line 567.

The drying liquid supply source 56 has a tank 561 for storing the IPA and a circulation line 562 that exits the tank 561 and returns to the tank 561. A pump 563 is provided on the circulation line 562. Pump 563 forms a circulating flow out of tank 561, through circulation line 562 and back to tank 561. Further, the circulation line 562 is provided with a heater 564 and a filter 565 on the downstream side of the pump 563. The heater 564 heats the IPA flowing through the circulation line 562. For example, IPA is heated to about 65-75 ° C. by heater 564. The filter 565 removes foreign substances such as particles contained in the IPA.

Further, a plurality of supply lines 567 are connected to the circulation line 562. Each supply line 567 supplies the processing liquid flowing through the circulation line 562 to the corresponding processing unit 16. Each circulation line 562 may be provided with a flow rate adjusting mechanism such as a flow rate control valve, a filter, or the like, if necessary. Further, the circulation line 562 is provided with a valve 566 for opening and closing the circulation line 562 on the downstream side of the plurality of supply lines 567.

A replenishment unit 568 for replenishing IPA is connected to the tank 561. Further, the tank 561 is provided with a drain portion 569 for discarding the IPA in the tank 561.

The chemical solution nozzle 42 may be provided in the second supply unit 50. Further, the processing unit 16 moves a third arm that supports the chemical solution nozzle 42 and the third arm in addition to the first arm 43, the second arm 53, the first moving mechanism 44, and the second moving mechanism 54. A third moving mechanism may be provided.

The recovery cup 60 is arranged so as to surround the holding portion 31, and collects the processing liquid scattered from the wafer W by the rotation of the holding portion 31. A drainage port 61 is formed at the bottom of the recovery cup 60, and the treatment liquid collected by the recovery cup 60 is discharged from the drainage port 61 to the outside of the treatment unit 16. Further, an exhaust port 62 for discharging the gas supplied from the FFU 21 to the outside of the processing unit 16 is formed at the bottom of the recovery cup 60.

<Specific operation of the processing unit>
Next, the contents of the substrate cleaning process executed by the processing unit 16 will be described with reference to FIG. FIG. 3 is a flowchart showing a processing procedure of substrate processing executed by the processing unit 16. The processing procedure shown in FIG. 3 is executed by the control unit 18 reading the program stored in the storage unit 19 of the control device 4 and controlling the processing unit 16 and the like based on the read instructions.

As shown in FIG. 3, first, the chemical treatment is performed (step S101). In the chemical treatment, the holding portion 31 holding the wafer W is rotated. Further, the chemical solution nozzle 42 is arranged above the center of the wafer W. After that, the valve 47 is opened for a preset time, so that the chemical solution is discharged from the chemical solution nozzle 42 to the central portion of the rotating wafer W. The chemical solution supplied to the central portion of the wafer W spreads over the entire upper surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. As a result, the upper surface of the wafer W is processed. For example, the upper surface of the wafer W, which is the device surface, is cleaned.

Subsequently, a rinsing process is performed (step S102). In the rinsing process, the rinsing liquid nozzle 41 is arranged above the center of the wafer W. After that, when the valve 45 is opened for a preset time, DIW, which is a rinse liquid, is discharged from the rinse liquid nozzle 41 to the central portion of the rotating wafer W. The DIW supplied to the central portion of the wafer W spreads over the entire upper surface of the wafer W due to the centrifugal force accompanying the rotation of the wafer W. As a result, the chemical solution remaining on the upper surface of the wafer W is washed away by the DIW.

Subsequently, the replacement process is performed (step S103). The replacement process is a process of replacing the DIW remaining on the wafer W with an IPA having a higher volatility than the DIW. Here, if the supply of IPA to the wafer W is started after the supply of DIW to the wafer W is stopped, the wafer W dries between the time when the supply of DIW is stopped and the time when the IPA is supplied, in other words. , The upper surface of the wafer W may be exposed from the liquid film. When the wafer W dries, watermarks may be generated on the upper surface of the wafer W, or the amount of particles remaining on the upper surface of the wafer W may increase.

Therefore, in the replacement process, the IPA is supplied from the drying liquid nozzle 51 to the upper surface of the wafer W while the DIW is supplied from the rinse liquid nozzle 41 to the upper surface of the wafer W following the rinse process. That is, the two liquids of DIW and IPA are simultaneously supplied to the wafer W. After that, the rinse liquid nozzle 41 is moved toward the outer peripheral portion of the wafer W. As a result, the area on the wafer W that the IPA has not yet reached can be covered with the DIW liquid film while expanding the IPA liquid film. Therefore, the drying of the wafer W can be suppressed. The details of the replacement process will be described later.

Subsequently, a drying process is performed (step S104). In the drying process, the rotation speed of the holding portion 31 is increased. As a result, the IPA remaining on the wafer W is shaken off and the wafer W dries. When the drying process is completed, the rotation of the holding unit 31 is stopped. After that, the wafer W is carried out from the processing unit 16 by the substrate transfer device 17 (see FIG. 1). As a result, a series of substrate processing for one wafer W is completed.

By the way, foreign matter generated from the valve 55 may be mixed in the IPA discharged from the drying liquid nozzle 51. This foreign substance is, for example, fine particles such as metal powder generated when the movable part (piston) of the valve 55 rubs against the fixed part (cylinder) of the valve 55 in the opening / closing operation of the valve 55. In particular, when a heated IPA is used as in the present embodiment, the valve 55 is thermally expanded by the heated IPA, and as a result, the frictional force between the movable portion and the fixed portion is increased, resulting in the amount of foreign matter generated. May increase. Further, when DIW and IPA are simultaneously ejected as in the present embodiment, if IPA containing foreign matter and DIW are mixed on the wafer W, the foreign matter may adhere to the wafer W and the number of particles may increase. is there.

Therefore, in the processing unit 16 according to the embodiment, it is decided to control the operation of the second supply unit 50 and the like in the replacement process in order to make it difficult for the foreign matter generated from the valve 55 to remain on the wafer W. Hereinafter, the specific operation of the processing unit 16 in the replacement process will be described with reference to FIGS. 4 to 9. 4 to 9 are diagrams showing an operation example of the replacement process.

4 to 6 are diagrams showing an operation example of the two-liquid supply step in the replacement process. Further, FIGS. 5 and 6 are diagrams showing an operation example of the first moving step in the replacement process. Further, FIG. 8 is a diagram showing an operation example of a second moving step, a maintenance step, a rotation speed changing step, and a flow rate changing step in the replacement process. Further, FIG. 9 is a diagram showing an operation example of the third moving step in the replacement process.

First, as shown in FIG. 4, following the rinsing treatment, that is, after the rinsing treatment is completed, the rinsing liquid nozzle 41 arranged above the center of the wafer W without stopping the discharge of DIW from the rinsing liquid nozzle 41. DIW is supplied to the wafer W rotating from. Further, the drying liquid nozzle 51 starts moving from the outside of the wafer W toward the center of the wafer W by the second moving mechanism 54 (see FIG. 2).

Here, foreign matter M is generated more when the valve 55 is closed. Therefore, as shown in FIG. 4, foreign matter M generated when the valve 55 is closed in the previous replacement process remains in the supply line 567. Here, an example is shown in which the foreign matter M remains in the supply line 567 on the downstream side of the valve 55, but the foreign matter M also remains in the supply line 567 and the valve 55 on the upstream side of the valve 55. May be.

Subsequently, as shown in FIG. 5, the rinse liquid nozzle 41 starts moving from the central portion to the outer peripheral portion of the wafer W by the first moving mechanism 44 (see FIG. 2). Further, after the drying liquid nozzle 51 reaches the upper center of the wafer W, the valve 55 is opened to supply IPA from the drying liquid nozzle 51 to the central portion of the wafer W. As shown in FIG. 6, the liquid film of IPA expands with the movement of the rinse liquid nozzle 41.

Subsequently, as shown in FIG. 7, after the rinse liquid nozzle 41 reaches the outer peripheral portion of the wafer W, the valve 45 is closed to stop the supply of DIW from the rinse liquid nozzle 41 to the wafer W. As a result, an IPA liquid film can be formed on the entire upper surface of the wafer W while suppressing the drying of the wafer W.

As shown in FIGS. 5 to 7, in the processing unit 16, the foreign matter M remaining around the valve 55 is downstream from the valve 55 so as not to be discharged from the drying liquid nozzle 51 before the supply of DIW is stopped. The volume of the side supply line 567 and the flow rate of the IPA are set. As a result, it is possible to suppress the mixing of IPA and DIW containing the foreign matter M, so that the increase of particles can be suppressed. Not limited to this, after the liquid film of IPA is formed on at least the entire upper surface of the wafer W, the IPA containing the foreign matter M is discharged from the drying liquid nozzle 51 on the downstream side of the valve 55. The volume of the supply line 567 and the flow rate of the IPA may be set. By covering the entire upper surface of the wafer W with an IPA that does not contain the foreign matter M, it is possible to suppress the adhesion of the foreign matter M to the wafer W.

Subsequently, when a preset time (first set time) elapses after the supply of IPA to the wafer W is started (see FIG. 5), the drying liquid nozzle 51 moves toward the outer peripheral portion of the wafer W. To start.

The first set time is based on the volume of the supply line 567 downstream of the valve 55, the flow rate of the IPA, the moving speed of the liquid nozzle 51 for drying, and the like, and after the valve 55 is opened, the foreign matter M is the liquid nozzle for drying. It is set to a time shorter than the time required to discharge from 51. The "time required for the foreign matter M to be discharged from the drying liquid nozzle 51 after the valve 55 is opened" is determined by a prior experiment or simulation.

As a result, as shown in FIG. 8, after the drying liquid nozzle 51 reaches the outer peripheral portion of the wafer W, the IPA containing the foreign matter M is discharged to the outer peripheral portion of the wafer W. By ejecting the IPA containing the foreign matter M to the outer peripheral portion of the wafer W in this way, the wafer of the foreign matter M is compared with the case where the IPA containing the foreign matter M is ejected to the central portion of the wafer W. The amount of adhesion to W can be suppressed.

The position of the drying liquid nozzle 51 is maintained on the outer peripheral portion of the wafer W until a preset time (second set time) elapses after the drying liquid nozzle 51 reaches the outer peripheral portion of the wafer W. .. The second set time is set to a time equal to or longer than the time required from the discharge of the IPA containing the foreign matter M from the drying liquid nozzle 51 to the completion of the discharge. Thereby, for example, it is possible to prevent the IA containing the foreign matter M from being ejected radially inward from the outer peripheral portion of the wafer W in the third moving step in the subsequent stage.

Further, as shown in FIG. 8, after the drying liquid nozzle 51 reaches the outer peripheral portion of the wafer W, the rotation speed of the holding portion 31 is increased until the second set time elapses. That is, the wafer W is rotated at a higher speed. As a result, the foreign matter M discharged to the outer peripheral portion of the wafer W can be quickly discharged to the outside of the wafer W. That is, the discharge performance of the foreign matter M can be improved. After the second set time has elapsed, the rotation speed of the holding unit 31 is returned to the original rotation speed.

Further, after the drying liquid nozzle 51 reaches the outer peripheral portion of the wafer W, the flow rate of IPA discharged from the drying liquid nozzle 51 is increased until the second set time elapses. As a result, the IPA containing the foreign matter M is less likely to remain on the wafer W as compared with the case where the IPA containing the foreign matter M is discharged at a low flow rate, so that the discharge performance of the foreign matter M can be improved. After the second set time elapses, the IPA flow rate is returned to the original flow rate.

Subsequently, when the second set time elapses, as shown in FIG. 9, the drying liquid nozzle 51 starts moving from the outer peripheral portion to the central portion of the wafer W. Then, after the drying liquid nozzle 51 reaches the central portion of the wafer W, IPA is applied from the drying liquid nozzle 51 to the central portion of the wafer W until a preset time (third set time) elapses. Will be supplied. After that, when the third set time elapses, the valve 55 is closed to stop the supply of IPA from the drying liquid nozzle 51 to the wafer W.

As described above, foreign matter M is generated more when the valve 55 is closed. Here, the inventor of the present application has found that the amount of particles on the wafer W decreases as the closing speed of the valve 55 is slowed down. Based on this finding, the valve 55 may be set at a lower closing speed than an opening speed. By setting in this way, the amount of foreign matter M discharged onto the wafer W in the next replacement process can be reduced. For example, when the valve 55 is a single-acting normally closed valve, the closing speed of the valve 55 can be adjusted by using a speed controller that adjusts the air pressure for opening the valve 55. The valve 55 may be a double-acting type. By using a double-acting valve as the valve 55, it is possible to set the closing speed slower than that of the single-acting valve.

<Modification example of the second movement step>
Next, a modified example of the second moving step described above will be described with reference to FIG. FIG. 10 is a diagram showing an operation example of the second moving step according to the modified example.

As shown in FIG. 10, in the second moving step, the drying liquid nozzle 51 passes through the outer peripheral portion of the wafer W and is moved to the outside of the wafer W. In this case, the IPA containing the foreign matter M is discharged to the outside of the wafer W. Therefore, it is possible to more reliably prevent foreign matter M from adhering to the upper surface of the wafer W. In order to prevent the IPA containing the foreign matter M from adhering to the grip portion 31a (see FIG. 2), instead of the holding portion 31, a holding portion that sucks and holds the lower surface of the wafer W such as a vacuum chuck is provided. It may be used.

As described above, the substrate processing method according to the embodiment includes a processing liquid supply step (as an example, a rinsing treatment), a two-liquid supply step (as an example, a two-liquid supply step in a replacement process), and a first moving step. (As an example, the first moving step in the replacement process) and the second moving step (as an example, the second moving step in the replacement process) are included. In the processing liquid supply step, the processing liquid (DIW as an example) is supplied to the substrate (wafer W as an example). In the two-liquid supply step, after the treatment liquid supply step, the treatment liquid is supplied to the substrate, and a drying liquid (IPA, for example) having higher volatility than the treatment liquid is supplied to the substrate. In the first moving step, in the two-liquid supply step, the discharge position of the processing liquid is moved toward the outer peripheral portion of the substrate. The second moving step is after the first moving step, and after a preset time (for example, the first set time) has elapsed from the start of supply of the drying liquid to the substrate, the drying liquid The discharge position of is moved toward the outer peripheral portion of the substrate.

Thereby, for example, a drying liquid containing a foreign substance can be discharged to the outer peripheral portion of the substrate. Therefore, the amount of foreign matter adhering to the substrate can be suppressed as compared with the case where the drying liquid containing foreign matter is discharged to the central portion of the substrate. Therefore, the amount of particles adhering to the substrate can be reduced. Further, for example, the consumption of the drying liquid can be suppressed as compared with the case where the foreign matter is discharged by performing dummy dispensing before starting the discharge of the drying liquid.

In the above-described embodiment, after the drying liquid is discharged to the central portion of the substrate in the two-liquid supply step, the discharge position of the drying liquid is moved toward the outer peripheral portion of the substrate in the second moving step. An example has been described. However, the discharge position of the drying liquid before the second moving step does not necessarily have to be the central portion of the substrate, and may be inside the outer peripheral portion of the substrate in the radial direction.

Further, in the above-described embodiment, an example in which the discharge position of the drying liquid is moved while discharging the drying liquid in the second moving step has been described. Not limited to this, for example, the discharge of the drying liquid may be stopped until the second moving step is completed.

Further, in the above-described embodiment, an example in which the discharge of the treatment liquid is stopped after the discharge position of the treatment liquid reaches the outer peripheral portion of the substrate in the first moving step has been described. Not limited to this, the processing liquid may continue to be discharged on the outer peripheral portion of the substrate.

The preset time is the portion of the pipe (for example, supply line 567) through which the drying liquid flows, which is located downstream of the valve (for example, valve 55) for switching between discharge and non-discharge of the drying liquid. It may be determined based on the volume of the liquid and the flow rate of the drying liquid flowing through the pipe.

For example, when the treatment liquid is water, the foreign matter may come into contact with water on the substrate, causing the foreign matter to adhere to the substrate and increase the amount of particles on the substrate. On the other hand, by setting the preset time as described above, it is possible to suppress the mixing of foreign matter and water, so that the increase of particles can be suppressed.

The preset time may be set to be shorter than the time required for the foreign matter (for example, foreign matter M) generated from the valve to be discharged together with the drying liquid after the valve is opened. As a result, for example, when the treatment liquid is water, it is possible to suppress the mixing of foreign matter and water, so that the increase of particles can be suppressed.

The substrate processing method according to the embodiment may further include a third moving step (for example, a third moving step in the replacement process). In the third moving step, after the second moving step, the discharge position of the drying liquid is moved toward the central portion of the substrate. As a result, it is possible to form a liquid film of the drying liquid on the substrate while suppressing adhesion of foreign matter discharged together with the drying liquid to the substrate.

The substrate processing method according to the embodiment may further include a maintenance step (for example, a maintenance step in the replacement process). In the maintenance step, the discharge position of the drying liquid is maintained on the outer peripheral portion of the substrate after the second moving step and before the third moving step. As a result, for example, it is possible to prevent the drying liquid containing foreign matter from being discharged onto the substrate other than the outer peripheral portion. Therefore, the amount of foreign matter adhering to the substrate can be suppressed more reliably.

The substrate processing method according to the embodiment may further include a rotation speed changing step (for example, a rotation speed changing step in the replacement process). The rotation speed changing step increases the rotation speed of the substrate in the maintenance step. As a result, for example, the foreign matter discharged to the outer peripheral portion of the substrate can be quickly discharged to the outside of the substrate.

The substrate processing method according to the embodiment may further include a flow rate changing step (for example, a flow rate changing step in the replacement process). The flow rate changing step increases the flow rate of the drying liquid in the maintenance step. As a result, the drying liquid containing foreign matter is less likely to remain on the substrate as compared with the case where the drying liquid containing foreign matter is discharged at a low flow rate, so that the foreign matter discharging performance can be improved.

In the second moving step, the discharge position of the drying liquid may be moved to the outside of the substrate. In this case, the drying liquid containing foreign matter is discharged to the outside of the substrate. Therefore, it is possible to more reliably suppress the adhesion of foreign matter to the substrate.

Further, the substrate processing apparatus (as an example, the processing unit 16) according to the embodiment includes a holding unit (as an example, a substrate holding mechanism 30), a first supply unit (as an example, a first supply unit 40), and a second. A supply unit (as an example, a second supply unit 50) and a control unit (as an example, a control unit 18) are provided. The holding portion rotatably holds the substrate (for example, the wafer W). The first supply unit is a first nozzle (for example, a rinse liquid nozzle 41) that supplies a processing liquid (DIW as an example) to a substrate held by the holding unit, and a first movement that moves the first nozzle. It includes a mechanism (as an example, a first moving mechanism 44). The second supply unit includes a second nozzle (for example, a drying liquid nozzle 51) that supplies a drying liquid (IPA as an example) having higher volatility than the treatment liquid to the substrate held by the holding unit. , A second moving mechanism (for example, a second moving mechanism 54) for moving the second nozzle is included. The control unit controls the first supply unit and the second supply unit to execute the processing liquid supply process, the two-component supply process, the first transfer process, and the second transfer process. In the processing liquid supply processing, the processing liquid is supplied to the substrate. In the two-liquid supply treatment, after the treatment liquid supply treatment, the drying liquid is supplied to the substrate while supplying the treatment liquid to the substrate. In the first moving process, in the two-liquid supply process, the discharge position of the processing liquid is moved toward the outer peripheral portion of the substrate. The second transfer process is performed after the first transfer process, and after a preset time has elapsed from the start of supply of the drying liquid to the substrate, the discharge position of the drying liquid is moved to the outer peripheral portion of the substrate. Move towards. As a result, the amount of particles adhering to the substrate can be reduced.

The second supply unit further includes a pipe for supplying the drying liquid to the second nozzle, and a valve provided in the pipe for switching between discharge and non-discharge of the drying liquid by opening and closing the pipe. The valve may be set at a lower closing speed than an opening speed. This makes it possible to reduce the amount of foreign matter generated from the valve. Therefore, the amount of particles adhering to the substrate can be reduced.

It should be considered that the embodiments disclosed this time are exemplary in all respects and not restrictive. Indeed, the above embodiments can be embodied in a variety of forms. In addition, the above-described embodiment may be omitted, replaced, or changed in various forms without departing from the scope of the appended claims and the purpose thereof.

W Wafer 1 Substrate processing system 2 Loading / unloading station 3 Processing station 4 Control device 16 Processing unit 18 Control unit 19 Storage unit 20 Chamber 30 Board holding mechanism 31 Holding unit 32 Support unit 33 Drive unit 40 First supply unit 41 Rinse liquid nozzle 42 Chemical solution nozzle 43 1st arm 44 1st moving mechanism 45 Valve 46 Rinse solution supply source 47 Valve 48 Chemical solution supply source 50 2nd supply unit 51 Drying liquid nozzle 53 2nd arm 54 2nd moving mechanism 55 Valve 56 Drying liquid supply Source 467,487,567 Supply line

Claims (10)

The processing liquid supply process that supplies the processing liquid to the substrate, and
After the treatment liquid supply step, a two-liquid supply step of supplying the treatment liquid to the substrate and supplying a drying liquid having higher volatility than the treatment liquid to the substrate.
In the two-liquid supply step, a first moving step of moving the discharge position of the processing liquid toward the outer peripheral portion of the substrate, and
After the first moving step, after a preset time has elapsed from the start of supply of the drying liquid to the substrate, the discharge position of the drying liquid is directed toward the outer peripheral portion of the substrate. A substrate processing method including a second moving step of moving the substrate. The preset time is
Determined based on the volume of the portion of the pipe through which the drying liquid flows, which is located downstream of the valve for switching between discharge and non-discharge of the drying liquid, and the flow rate of the drying liquid flowing through the pipe. The substrate processing method according to claim 1. The preset time is
From the time required for the foreign matter generated from the valve to be discharged together with the drying liquid after the valve provided in the pipe through which the drying liquid flows is opened and switching between the discharge and non-discharge of the drying liquid. The substrate processing method according to claim 1, wherein the substrate processing method is also set in a short time. The substrate processing method according to any one of claims 1 to 3, further comprising a third moving step of moving the discharge position of the drying liquid toward the central portion of the substrate after the second moving step. The substrate processing method according to claim 4, further comprising a maintenance step of maintaining the discharge position of the drying liquid on the outer peripheral portion of the substrate after the second moving step and before the third moving step. The substrate processing method according to claim 5, further comprising a rotation speed changing step of increasing the rotation speed of the substrate in the maintenance step. The substrate processing method according to claim 5 or 6, further comprising a flow rate changing step of increasing the flow rate of the drying liquid in the maintenance step. The second moving step is
The substrate processing method according to any one of claims 1 to 4, wherein the discharge position of the drying liquid is moved to the outside of the substrate. A holding part that holds the board rotatably,
A first supply unit including a first nozzle for supplying a processing liquid to the substrate held by the holding unit and a first moving mechanism for moving the first nozzle.
A second supply unit including a second nozzle that supplies a drying liquid having higher volatility than the treatment liquid to the substrate held by the holding unit, and a second moving mechanism that moves the second nozzle. When,
A treatment liquid supply process for supplying a treatment liquid to the substrate by controlling the first supply unit and the second supply unit, and after the treatment liquid supply treatment, the treatment liquid is supplied to the substrate while being described. In the two-liquid supply process of supplying the drying liquid to the substrate, the first transfer process of moving the discharge position of the treatment liquid toward the outer peripheral portion of the substrate, and the first transfer process. Later, after a preset time has elapsed since the supply of the drying liquid to the substrate was started, the discharge position of the drying liquid is moved toward the outer peripheral portion of the substrate. A board processing device including a control unit that executes movement processing. The second supply unit
A pipe that supplies the drying liquid to the second nozzle,
Further provided with a valve provided in the pipe and switching between discharge and non-discharge of the drying liquid by opening and closing the pipe.
The substrate processing apparatus according to claim 9, wherein the closed speed of the valve is set lower than that of the open speed.