CN112103209A - Substrate processing method and substrate processing apparatus - Google Patents
Substrate processing method and substrate processing apparatus Download PDFInfo
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- CN112103209A CN112103209A CN202010511151.9A CN202010511151A CN112103209A CN 112103209 A CN112103209 A CN 112103209A CN 202010511151 A CN202010511151 A CN 202010511151A CN 112103209 A CN112103209 A CN 112103209A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Abstract
The invention provides a substrate processing method and a substrate processing apparatus. The substrate processing method of the present invention includes a processing liquid supply step, two liquid supply steps, a 1 st movement step and a 2 nd movement step. A treatment liquid supply step of supplying a treatment liquid to the substrate. And a two-liquid supply step of supplying a drying liquid having a higher volatility than the treatment liquid to the substrate while supplying the treatment liquid to the substrate after the treatment liquid supply step. A first moving step of moving the discharge position of the processing liquid toward the outer peripheral portion of the substrate in the two-liquid supplying step. And a 2 nd moving step of moving the discharge position of the drying liquid toward the outer peripheral portion of the substrate after the 1 st moving step and after a predetermined time has elapsed since the start of the supply of the drying liquid to the substrate. According to the present invention, the amount of particles adhering to the substrate can be reduced.
Description
Technical Field
The present invention relates to a substrate processing method and a substrate processing apparatus.
Background
As a method of drying the substrate after the cleaning treatment, there is known a method of supplying a volatile liquid to the surface of the substrate to replace the liquid remaining on the substrate with the volatile liquid, and thereafter volatilizing the volatile liquid to dry the substrate.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2015-213105.
Disclosure of Invention
The present invention provides a technique capable of reducing the amount of particles adhering to a substrate.
A substrate processing method according to one embodiment of the present invention includes a processing liquid supply step, two liquid supply steps, a 1 st movement step, and a 2 nd movement step. A treatment liquid supply step of supplying a treatment liquid to the substrate. And a two-liquid supply step of supplying a drying liquid having a higher volatility than the treatment liquid to the substrate while supplying the treatment liquid to the substrate after the treatment liquid supply step. A first moving step of moving the discharge position of the processing liquid toward the outer peripheral portion of the substrate in the two-liquid supplying step. And a 2 nd moving step of moving the discharge position of the drying liquid toward the outer peripheral portion of the substrate after the 1 st moving step and after a predetermined time has elapsed since the start of the supply of the drying liquid to the substrate.
According to the present invention, the amount of particles adhering to the substrate can be reduced.
Drawings
Fig. 1 is a diagram showing a configuration of a substrate processing system according to an embodiment.
Fig. 2 is a diagram showing a configuration of a processing unit according to the embodiment.
Fig. 3 is a flowchart showing processing steps of substrate processing performed by the processing unit.
Fig. 4 is a diagram showing an operation example of the replacement processing.
Fig. 5 is a diagram showing an operation example of the replacement processing.
Fig. 6 is a diagram showing an operation example of the replacement processing.
Fig. 7 is a diagram showing an operation example of the replacement processing.
Fig. 8 is a diagram showing an operation example of the replacement processing.
Fig. 9 is a diagram showing an operation example of the replacement processing.
Fig. 10 is a diagram showing an operation example of the 2 nd movement step in the modification.
Description of the reference numerals
W wafer
1 substrate processing system
2 in and out station
3 treatment station
4 control device
16 processing unit
18 control part
19 storage section
20 chamber
30 substrate holding mechanism
31 holding part
32 pillar part
33 drive part
40 No. 1 supply part
41 flushing liquid nozzle
42 liquid medicine nozzle
43 arm 1
44 1 st moving mechanism
45 valve
46 rinse liquid supply source
47 valve
48 chemical liquid supply source
50 nd 2 supply part
51 liquid nozzle for drying
53 nd arm 2
54 nd 2 nd moving mechanism
55 valve
56 liquid supply source for drying
467. 487, 567 supply line
Detailed Description
Hereinafter, embodiments (hereinafter, referred to as "embodiments") of the substrate processing method and the substrate processing apparatus according to the present invention will be described in detail with reference to the drawings. Further, the substrate processing method and the substrate processing apparatus of the present invention are not limited to the embodiment. In addition, the embodiments can be appropriately combined within a range where the processing contents are not contradictory. In the following embodiments, the same portions are denoted by the same reference numerals, and redundant description thereof is omitted.
In addition, in the drawings referred to below, in order to facilitate understanding of the description, an orthogonal coordinate system in which an X axis, a Y axis, and a Z axis are defined to be orthogonal to each other and the positive direction of the Z axis is a vertical upward direction may be shown. In addition, a rotation direction with the vertical axis as a rotation center may be a θ direction.
< construction of substrate processing System >
Fig. 1 is a diagram showing a configuration of a substrate processing system according to an embodiment. As shown in fig. 1, a substrate processing system 1 includes an in-out station 2 and a processing station 3. The in-and-out station 2 and the processing station 3 are disposed adjacently.
The carry-in/out station 2 includes a carrier placing section 11 and a conveying section 12. A plurality of carriers C for horizontally accommodating a plurality of substrates, i.e., semiconductor wafers (hereinafter, referred to as wafers W) in the present embodiment, are placed on the carrier placement unit 11.
On the carrier placement table 11, a plurality of loading boats are arranged adjacent to the conveying unit 12, and the carriers C are placed on the respective loading boats one by one.
The transport unit 12 is provided adjacent to the carrier placement unit 11, and includes a substrate transport device 13 and a transfer unit 14 therein. The substrate transport apparatus 13 has a wafer holding mechanism for holding the wafer W. The substrate transport device 13 can move in the horizontal direction and the vertical direction and rotate about the vertical axis, and transports the wafer W between the carrier C and the delivery portion 14 using the wafer holding mechanism.
The processing station 3 is disposed adjacent to the conveying section 12. The processing station 3 has a conveying section 15 and a plurality of processing units 16. The plurality of processing units 16 are arranged in a row on both sides of the conveying section 15.
The conveying section 15 includes a substrate conveying device 17 therein. The substrate transport apparatus 17 has a wafer holding mechanism for holding the wafer W. The substrate transport device 17 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and transports the wafer W between the delivery unit 14 and the processing unit 16 using the wafer holding mechanism.
The processing unit 16 performs a predetermined substrate processing on the wafer W conveyed by the substrate conveyor 17.
In addition, the substrate processing system 1 has a control device 4. The control device 4 is, for example, a computer, and has a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes executed in the substrate processing system 1. The control unit 18 reads and executes the program stored in the storage unit 19 to control the operation of the substrate processing system 1.
The program may be recorded in a computer-readable storage medium, or may be installed from the storage medium to the storage unit 19 of the control device 4. Examples of the computer-readable storage medium include a Hard Disk (HD), a Flexible Disk (FD), an optical disk (CD), a magnetic disk (MO), and a memory card.
In the substrate processing system 1 configured as described above, first, the substrate transport device 13 of the carry-in/out station 2 takes out the wafer W from the carrier C placed on the carrier placing section 11, and places the taken-out wafer W on the delivery section 14. The wafer W placed on the transfer portion 14 is taken out of the transfer portion 14 by the substrate transport device 17 of the processing station 3 and is carried into the processing unit 16.
The wafer W carried into the processing unit 16 is processed by the processing unit 16, and then carried out of the processing unit 16 by the substrate transport device 17 to be placed on the delivery part 14. Then, the processed wafer W placed on the transfer portion 14 is returned to the carrier C of the carrier placing portion 11 by the substrate transport device 13.
< construction of processing Unit >
Next, the processing unit 16 is explained with reference to fig. 2. Fig. 2 is a diagram showing a schematic configuration of the processing unit 16.
As shown in fig. 2, the processing unit 16 has a chamber 20, a substrate holding mechanism 30, a 1 st supply part 40, a 2 nd supply part 50, and a recovery cup 60.
The chamber 20 houses the substrate holding mechanism 30, the 1 st supply part 40, the 2 nd supply part 50, and the recovery cup 60. A FFU (Fan Filter Unit) 21 is provided at the top of the chamber 20. FFU21 creates a downward flow of air within chamber 20.
The substrate holding mechanism 30 has a holding portion 31, a column portion 32, and a driving portion 33. The holding portion 31 holds the wafer W horizontally. Specifically, the holding portion 31 has a plurality of grip portions 31a, and the peripheral edge portion of the wafer W is gripped by the plurality of grip portions 31 a. The column part 32 extends in the vertical direction, and has a base end rotatably supported by the drive part 33 and a tip end horizontally supporting the holding part 31. The driving unit 33 rotates the column part 32 about the vertical axis. The substrate holding mechanism 30 rotates the column part 32 using the driving part 33, and rotates the holding part 31 supported by the column part 32, thereby rotating the wafer W held by the holding part 31.
The 1 st supply unit 40 includes a rinse solution nozzle 41, a chemical solution nozzle 42, a 1 st arm 43 supporting the rinse solution nozzle 41 and the chemical solution nozzle 42, and a 1 st moving mechanism 44 for moving the 1 st arm 43.
The rinse liquid nozzle 41 is connected to the supply line 467. The supply line 467 connects the rinse solution nozzle 41 to the rinse solution supply source 46. The rinse liquid supply source 46 supplies the rinse liquid to the rinse liquid nozzle 41 through the supply line 467. Here, DIW (deionized water) can be used as the rinse liquid. The supply line 467 is provided with a valve 45. The valve 45 can switch between discharging and non-discharging the DIW from the rinse solution nozzle 41 to the wafer W by opening and closing the supply line 467.
The chemical liquid nozzle 42 is connected to the supply line 487. The supply line 487 connects the chemical solution nozzle 42 and the chemical solution supply source 48. The chemical liquid supply source 48 supplies the chemical liquid to the chemical liquid nozzle 42 via the supply line 487. The type of chemical solution is not particularly limited, and for example, HF (hydrofluoric acid), SC1 (mixed solution of ammonia water, hydrogen peroxide, and water), and the like can be used. The supply line 487 is provided with a valve 47. The valve 47 can switch between discharge and non-discharge of the chemical solution from the chemical solution nozzle 42 to the wafer W by opening and closing the supply line 487.
The 2 nd supply unit 50 includes a drying liquid nozzle 51, a 2 nd arm 53 supporting the drying liquid nozzle 51, and a 2 nd movement mechanism 54 for moving the 2 nd arm 53.
The drying liquid nozzle 51 is connected to a supply line 567. The supply line 567 connects the drying liquid nozzle 51 to the drying liquid supply source 56. The drying liquid supply source 56 supplies the drying liquid to the drying liquid nozzle 51 via the supply line 567. Here, IPA (isopropyl alcohol) can be used as the drying liquid. The drying liquid may be a volatile solvent other than IPA such as acetone. In addition, the drying liquid may be a liquid having a higher volatility than the rinsing liquid (DIW in this case). A valve 55 is provided in the supply line 567. The valve 55 can switch between the discharge and non-discharge of IPA from the drying liquid nozzle 51 toward the wafer W by opening and closing the supply line 567.
The drying liquid supply source 56 has a tank 561 for storing IPA, and a circulation line 562 which leads from the tank 561 and returns to the tank 561. A pump 563 is provided in the circulation line 562. Pump 563 forms a recycle stream from tank 561 through recycle line 562 back to tank 561. Further, in the circulation line 562, a heater 564 and a filter 565 are provided on the downstream side of the pump 563. Heater 564 heats the IPA flowing in circulation line 562. The IPA is heated to about 65-75 deg.C by a heater 564, for example. The filter 565 removes impurities such as particles contained in IPA.
Further, the circulation line 562 is connected to a plurality of supply lines 567. Each supply line 567 supplies the processing liquid flowing through the circulation line 562 to the corresponding processing unit 16. Each circulation line 562 can be provided with a flow rate adjusting mechanism such as a flow rate control valve, a filter, and the like as needed. Further, the circulation line 562 is provided with a valve 566 for opening and closing the circulation line 562 on the downstream side of the plurality of supply lines 567.
The tank 561 is connected to a refill 568 for refilling IPA. The tank 561 is provided with a discharge portion 569 for discharging IPA in the tank 561.
The chemical liquid nozzle 42 may be provided in the 2 nd supply part 50. The process unit 16 includes a 3 rd arm for supporting the chemical solution nozzle 42 and a 3 rd moving mechanism for moving the 3 rd arm, in addition to the 1 st arm 43, the 2 nd arm 53, the 1 st moving mechanism 44 and the 2 nd moving mechanism 54.
The recovery cup 60 is disposed so as to surround the holding portion 31, and collects the processing liquid scattered from the wafer W by the rotation of the holding portion 31. A drain port 61 is formed in the bottom of the collection cup 60, and the processing liquid collected by the collection cup 60 is discharged to the outside of the processing unit 16 through the drain port 61. Further, an exhaust port 62 for exhausting the gas supplied from the FFU21 to the outside of the processing unit 16 is formed in the bottom of the recovery cup 60.
< specific operation of processing means >
Next, the contents of the substrate cleaning process performed by the processing unit 16 will be described with reference to fig. 3. Fig. 3 is a flowchart showing processing steps of substrate processing performed by the processing unit 16. The processing steps shown in fig. 3 are executed by the control unit 18 reading a program stored in the storage unit 19 of the control device 4 and controlling the processing unit 16 and the like based on the read command.
As shown in fig. 3, first, a chemical solution process is performed (step S101). In the chemical treatment, the holding unit 31 holding the wafer W rotates. The chemical solution nozzle 42 is disposed above the center of the wafer W. Thereafter, the valve 47 is opened for a predetermined time, thereby discharging the chemical solution from the chemical solution nozzle 42 toward the center of the rotating wafer W. The chemical solution supplied to the central portion of the wafer W spreads over the entire upper surface of the wafer W due to a centrifugal force generated by the rotation of the wafer W. Thereby, the upper surface of the wafer W is processed. For example, the device side, i.e., the upper surface, of the wafer W is cleaned.
Subsequently, a flushing process is performed (step S102). In the rinsing process, the rinse liquid nozzle 41 is disposed above the center of the wafer W. Thereafter, the valve 45 is opened for a predetermined time, and the DIW as the rinse liquid is discharged from the rinse liquid nozzle 41 toward the center of the rotating wafer W. The DIW supplied to the center of the wafer W spreads over the entire upper surface of the wafer W due to a centrifugal force generated by the rotation of the wafer W. Thus, the chemical solution remaining on the upper surface of the wafer W is washed away by the DIW.
Next, a replacement process is performed (step S103). The replacement process is a process of replacing the DIW remaining on the wafer W with IPA having higher volatility than the DIW. Here, when the supply of the IPA to the wafer W is started after the supply of the DIW to the wafer W is stopped, the wafer W is dried during a period from the stop of the supply of the DIW to the start of the supply of the IPA, in other words, the upper surface of the wafer W may be exposed from the liquid film. Since the wafer W is dried, a watermark is generated on the upper surface of the wafer W or the amount of particles remaining on the upper surface of the wafer W increases.
Therefore, in the replacement process, while the DIW is supplied from the rinse liquid nozzle 41 to the upper surface of the wafer W in the subsequent rinsing process, the IPA is supplied from the drying liquid nozzle 51 to the upper surface of the wafer W. That is, two liquids, DIW and IPA, are supplied to the wafer W at the same time. Thereafter, the rinse solution nozzle 41 is moved toward the outer peripheral portion of the wafer W. This makes it possible to spread the IPA liquid film and cover the region on the wafer W that has not been reached by IPA with the DIW liquid film. Therefore, drying of the wafer W can be suppressed. The details of the replacement processing will be described later.
Subsequently, a drying process is performed (step S104). In the drying process, the rotation speed of the holding portion 31 is increased. Accordingly, the IPA remaining on the wafer W is spun off to dry the wafer W. When the drying process is completed, the rotation of the holding portion 31 is stopped. Thereafter, the wafer W is carried out of the processing unit 16 by the substrate transport device 17 (see fig. 1). This completes a series of substrate processing for one wafer W.
However, there is a possibility that impurities generated from the valve 55 may be mixed into the IPA discharged from the drying liquid nozzle 51. The impurities are, for example, fine particles of metal powder or the like generated by friction between a movable portion (piston) of the valve 55 and a fixed portion (cylinder) of the valve 55 during opening and closing operations of the valve 55. In particular, when heated IPA is used as in the present embodiment, the heated IPA thermally expands the valve 55, which increases the frictional force between the movable portion and the fixed portion, and as a result, the amount of impurities generated increases. In addition, when discharging DIW and IPA simultaneously as in the present embodiment, if IPA and DIW containing impurities are mixed with each other on the wafer W, the impurities may adhere to the wafer W and particles may increase.
Therefore, in the process unit 16 according to the embodiment, the operations of the 2 nd supply part 50 and the like in the replacement process are controlled so that the impurities generated from the valve 55 are less likely to remain on the wafer W. Hereinafter, a specific operation of the processing unit 16 in the replacement processing will be described with reference to fig. 4 to 9. Fig. 4 to 9 are diagrams showing operation examples of the replacement processing.
Fig. 4 to 6 are diagrams showing operation examples of two liquid supply steps in the replacement process. Fig. 5 and 6 are diagrams showing an operation example of the 1 st movement step in the replacement processing. Fig. 8 is a diagram showing an example of the operation of the 2 nd movement step, the maintenance step, the rotation speed change step, and the flow rate change step in the replacement process. Fig. 9 is a diagram showing an example of the operation of the 3 rd movement step in the replacement process.
First, as shown in fig. 4, after the rinsing process, that is, after the rinsing process is completed, the DIW is supplied to the rotating wafer W from the rinse liquid nozzle 41 disposed above the center of the wafer W without stopping the discharge of the DIW from the rinse liquid nozzle 41. The drying liquid nozzle 51 is moved from the outside of the wafer W toward the center of the wafer W by a 2 nd moving mechanism 54 (see fig. 2).
Here, the impurities M are generated in a large amount when the valve 55 is closed. Therefore, as shown in fig. 4, the impurity M generated when the valve 55 was closed in the replacement process of the previous time remains in the supply line 567. Although the example in which the impurity M remains in the supply line 567 on the downstream side of the valve 55 is shown here, the impurity M may remain in the supply line 567 and/or the valve 55 on the upstream side of the valve 55.
Next, as shown in fig. 5, the rinse solution nozzle 41 starts to move from the center portion to the outer peripheral portion of the wafer W by the 1 st movement mechanism 44 (see fig. 2). After the drying liquid nozzle 51 reaches the upper center of the wafer W, IPA is supplied from the drying liquid nozzle 51 to the center of the wafer W by opening the valve 55. As shown in fig. 6, the liquid film of IPA is enlarged as the rinse nozzle 41 moves.
Next, as shown in fig. 7, when the rinse liquid nozzle 41 reaches the outer peripheral portion of the wafer W, the valve 45 is closed, and the DIW supply from the rinse liquid nozzle 41 to the wafer W is stopped. This suppresses drying of the wafer W, and the IPA liquid film is formed on the entire upper surface of the wafer W.
As shown in fig. 5 to 7, in the processing unit 16, the volume of the supply line 567 and the flow rate of IPA downstream of the valve 55 are set so that the impurities M remaining around the valve 55 are not discharged from the drying liquid nozzle 51 until the supply of DIW is stopped. This can prevent IPA containing the impurity M from being mixed with DIW, and thus can prevent an increase in particles. Further, without being limited to this, the volume of the supply line 567 and the flow rate of IPA on the downstream side of the valve 55 may be set so that IPA containing the impurity M is discharged from the drying liquid nozzle 51 after forming a liquid film of IPA on at least the entire upper surface of the wafer W. The IPA containing no impurity M covers the entire upper surface of the wafer W, thereby suppressing the adhesion of the impurity M to the wafer W.
Next, when a predetermined time (1 st set time) has elapsed after the supply of IPA to the wafer W is started (see fig. 5), the drying liquid nozzle 51 starts moving to the outer peripheral portion of the wafer W.
The 1 st set time can be set to a time shorter than the time required for discharging the impurity M from the drying liquid nozzle 51 after opening the valve 55, based on the volume of the supply line 567 on the downstream side of the valve 55, the flow rate of IPA, the moving speed of the drying liquid nozzle 51, and the like. The "time required after the valve 55 is opened until the foreign matter M is discharged from the drying liquid nozzle 51" is determined by a previous experiment, simulation, or the like.
As a result, as shown in fig. 8, IPA containing the impurity M is discharged to the outer peripheral portion of the wafer W after the drying liquid nozzle 51 reaches the outer peripheral portion of the wafer W. By discharging the IPA containing the impurity M to the outer peripheral portion of the wafer W in this manner, the amount of the impurity M adhering to the wafer W can be suppressed as compared with the case where the IPA containing the impurity M is discharged to the central portion of the wafer W.
The position of the drying liquid nozzle 51 is maintained at the outer peripheral portion of the wafer W until a predetermined time (2 nd set time) has elapsed after the drying liquid nozzle 51 reaches the outer peripheral portion of the wafer W. The 2 nd set time is set to a time equal to or longer than a time required until the end of the discharge after the IPA containing the impurity M is discharged from the drying liquid nozzle 51. This can prevent the IA containing the impurity M from being discharged to the radially inner side of the outer peripheral portion of the wafer W in the next 3 rd movement step, for example.
As shown in fig. 8, the rotation speed of the holding portion 31 is increased until the 2 nd set time elapses after the drying liquid nozzle 51 reaches the outer peripheral portion of the wafer W. That is, the wafer W rotates at a higher speed. This enables the impurities M discharged to the outer peripheral portion of the wafer W to be more quickly discharged to the outside of the wafer W. That is, the discharge performance of the impurities M can be improved. After the lapse of the 2 nd set time, the rotation speed of the holding portion 31 returns to the original rotation speed.
Further, the flow rate of IPA discharged from the drying liquid nozzle 51 is increased until the 2 nd set time elapses after the drying liquid nozzle 51 reaches the outer peripheral portion of the wafer W. Accordingly, the IPA containing the impurity M is less likely to remain on the wafer W than when the IPA containing the impurity M is discharged at a low flow rate, and therefore the discharge performance of the impurity M can be improved. After the lapse of the 2 nd set time, the flow rate of IPA was returned to the original flow rate.
Then, when the 2 nd set time elapses, as shown in fig. 9, the drying liquid nozzle 51 is moved from the outer peripheral portion to the central portion of the wafer W. Then, IPA is supplied from the drying liquid nozzle 51 to the central portion of the wafer W until a predetermined time (3 rd set time) has elapsed after the drying liquid nozzle 51 reaches the central portion of the wafer W. After that, when the 3 rd set time has elapsed, the valve 55 is closed to stop the supply of IPA from the drying liquid nozzle 51 to the wafer W.
Further, as described above, the foreign matter M is generated more when the valve 55 is closed. Here, the inventors of the present invention found that the more the closing speed of the valve 55 is slowed, the more the amount of particles on the wafer W is reduced. Based on this finding, the closing speed of the valve 55 is set to be slower than the opening speed. By setting in this manner, the amount of the impurities M discharged onto the wafer W in the next replacement process can be reduced. For example, in the case where the valve 55 is a single-acting normally closed valve, the closing speed of the valve 55 can be adjusted using a governor that can adjust the air pressure for opening the valve 55. Furthermore, the valve 55 may be double acting. By using a double-acting valve as the valve 55, the closing speed can be further reduced as compared with a single-acting valve.
< modification of the second moving step >
Next, a modification of the above-described 2 nd movement step will be described with reference to fig. 10. Fig. 10 is a diagram showing an operation example of the 2 nd movement step in the modification.
As shown in fig. 10, in the 2 nd movement step, the drying liquid nozzle 51 is moved to the outside of the wafer W through the outer peripheral portion of the wafer W. In this case, IPA containing the impurity M is discharged to the outside of the wafer W. Therefore, the impurities M can be more reliably suppressed from adhering to the upper surface of the wafer W. In order to prevent IPA containing impurities M from adhering to the grip portion 31a (see fig. 2), a holding portion such as a vacuum chuck for sucking and holding the lower surface of the wafer W may be used instead of the holding portion 31.
As described above, the substrate processing method of the embodiment includes the processing liquid supply step (as an example, the rinsing process), the two-liquid supply step (as an example, the two-liquid supply step in the replacement process), the 1 st movement step (as an example, the 1 st movement step in the replacement process), and the 2 nd movement step (as an example, the 2 nd movement step in the replacement process). A process liquid supply step of supplying a process liquid (DIW, for example) to a substrate (wafer W, for example). And a two-liquid supply step of supplying a drying liquid (IPA, as an example) having a higher volatility than the processing liquid to the substrate while supplying the processing liquid to the substrate after the processing liquid supply step. A first moving step of moving the discharge position of the processing liquid toward the outer peripheral portion of the substrate in the two-liquid supplying step. And a 2 nd moving step of moving the discharge position of the drying liquid toward the outer peripheral portion of the substrate after the 1 st moving step and after a lapse of a predetermined time (for example, 1 st set time) from the start of the supply of the drying liquid to the substrate.
Thereby, for example, the drying liquid containing the impurities can be discharged to the outer peripheral portion of the substrate. Therefore, the amount of impurities adhering to the substrate can be suppressed as compared with the case where the drying liquid containing impurities is discharged to the central portion of the substrate. Therefore, the amount of particles attached to the substrate can be reduced. Further, the consumption amount of the drying liquid can be suppressed as compared with a case where, for example, the impurity is discharged by performing preliminary ejection before starting the discharge of the drying liquid.
In the above embodiment, an example of a case where the drying liquid is discharged to the central portion of the substrate in the two liquid supply steps and then the discharge position of the drying liquid is moved to the outer peripheral portion of the substrate in the 2 nd movement step has been described. However, the position of discharging the drying liquid before the 2 nd movement step does not necessarily have to be the central portion of the substrate, and may be radially inward of the outer peripheral portion of the substrate.
In the above embodiment, the example in which the discharge position of the drying liquid is moved while discharging the drying liquid has been described in the 2 nd moving step. However, the present invention is not limited to this, and for example, the discharge of the drying liquid may be stopped until the end of the 2 nd movement step.
In the above embodiment, the example in which the discharge of the processing liquid is stopped after the discharge position of the processing liquid reaches the outer peripheral portion of the substrate in the 1 st movement step has been described. However, the present invention is not limited to this, and the processing liquid may be continuously discharged to the outer peripheral portion of the substrate.
The predetermined time is determined based on both: a volume of a portion of a pipe (for example, the supply line 567) through which the drying liquid flows, the portion being located on a downstream side of a valve (for example, the valve 55) that switches between discharge and non-discharge of the drying liquid; and the flow rate of the drying liquid flowing through the pipe.
For example, in the case where the treatment liquid is water, the impurities on the substrate come into contact with the water to fix the impurities to the substrate, so that the amount of particles on the substrate increases. In this regard, by setting the preset time in the above manner, mixing of impurities with water can be suppressed, thereby suppressing an increase in particles.
The predetermined time may be set to a time shorter than a time required after the valve is opened until the foreign matter (for example, the foreign matter M) generated from the valve can be discharged together with the drying liquid. Thus, for example, in the case where the treatment liquid is water, mixing of impurities with water can be suppressed, and increase in particles can be suppressed.
The substrate processing method of the embodiment may further include a 3 rd moving step (as an example, the 3 rd moving step in the replacement process). And a 3 rd moving step of moving the discharge position of the drying liquid toward the center of the substrate after the 2 nd moving step. This can prevent impurities discharged together with the drying liquid from adhering to the substrate, and can form a liquid film of the drying liquid on the substrate.
The substrate processing method of an embodiment may further include a maintenance step (as an example, a maintenance step in the replacement process). A maintaining step of maintaining the discharge position of the drying liquid at the outer peripheral portion of the substrate after the 2 nd moving step and before the 3 rd moving step. This can prevent, for example, the drying liquid containing impurities from being discharged onto the substrate other than the outer peripheral portion. Therefore, the amount of the impurities adhering to the substrate can be more reliably suppressed.
The substrate processing method of the embodiment may further include a rotation speed changing step (as an example, a rotation speed changing step in the replacement processing). A rotation speed changing step of increasing the rotation speed of the substrate in the maintaining step. This enables, for example, impurities discharged to the outer periphery of the substrate to be more quickly discharged to the outside of the substrate.
The substrate processing method of an embodiment may further include a flow rate changing step (as an example, a flow rate changing step in the replacement processing). And a flow rate changing step of increasing the flow rate of the drying liquid in the maintaining step. Thus, the impurity-containing drying liquid is less likely to remain on the substrate than when the impurity-containing drying liquid is discharged at a low flow rate, and therefore, the impurity discharge performance can be improved.
In the 2 nd moving step, the position of discharging the drying liquid may be moved to the outside of the substrate. In this case, the drying liquid containing the impurities is discharged to the outside of the substrate. Therefore, the adhesion of impurities to the substrate can be more reliably suppressed.
The substrate processing apparatus (for example, the processing unit 16) according to the embodiment includes a holding unit (for example, the substrate holding mechanism 30), a 1 st supply unit (for example, the 1 st supply unit 40), a 2 nd supply unit (for example, the 2 nd supply unit 50), and a control unit (for example, the control unit 18). The holding portion can rotatably hold a substrate (wafer W as an example). The 1 st supply unit includes a 1 st nozzle (for example, a rinse solution nozzle 41) for supplying a processing solution (for example, DIW) to the substrate held by the holding unit, and a 1 st moving mechanism (for example, a 1 st moving mechanism 44) for moving the 1 st nozzle. The 2 nd supply unit includes a 2 nd nozzle (for example, a drying liquid nozzle 51) for supplying a drying liquid (for example, IPA) having a higher volatility than the processing liquid to the substrate held by the holding unit, and a 2 nd movement mechanism (for example, a 2 nd movement mechanism 54) for moving the 2 nd nozzle. The control unit controls the 1 st supply unit and the 2 nd supply unit to perform a process liquid supply process, a two-liquid supply process, a 1 st movement process, and a 2 nd movement process. And a treatment liquid supply step of supplying the treatment liquid to the substrate. And two liquid supply processes for supplying a drying liquid to the substrate while supplying the processing liquid to the substrate after the processing liquid supply process. The 1 st movement process moves the discharge position of the processing liquid to the outer peripheral portion of the substrate in the two-liquid supply process. And a 2 nd movement process of moving the discharge position of the drying liquid toward the outer peripheral portion of the substrate after the 1 st movement process and after a predetermined time has elapsed since the start of the supply of the drying liquid to the substrate. Thereby, the amount of particles adhering to the substrate can be reduced.
The 2 nd supply part further includes: a pipe for supplying the drying liquid to the 2 nd nozzle; and a valve provided in the pipe and switching between discharge and non-discharge of the drying liquid by opening and closing the pipe. The closing speed of the valve may be set slower than the opening speed. This can reduce the amount of impurities generated from the valve. Therefore, the amount of particles attached to the substrate can be reduced.
Furthermore, the disclosed embodiments of the invention are illustrative in all respects and should not be considered as limiting. In fact, the above-described embodiments can be implemented in various ways. The above-described embodiments may be omitted, replaced, or modified in various ways without departing from the scope and gist of the appended claims.
Claims (10)
1. A method of processing a substrate, comprising:
a processing liquid supply step of supplying a processing liquid to the substrate;
a two-liquid supply step of supplying a drying liquid having a higher volatility than the processing liquid to the substrate while supplying the processing liquid to the substrate after the processing liquid supply step;
a 1 st moving step of moving a discharge position of the treatment liquid toward an outer peripheral portion of the substrate in the two-liquid supplying step; and
and a 2 nd moving step of moving the discharge position of the drying liquid toward the outer peripheral portion of the substrate after the 1 st moving step and after a predetermined time has elapsed from the start of the supply of the drying liquid to the substrate.
2. The substrate processing method according to claim 1, wherein:
the predetermined time is determined based on both: a volume of a portion of a pipe through which the drying liquid flows, the portion being located downstream of a valve that switches between discharging and non-discharging of the drying liquid; and a flow rate of the drying liquid flowing through the pipe.
3. The substrate processing method according to claim 1, wherein:
the preset time is set to be shorter than the following time, namely: and a valve that is provided in a pipe through which the drying liquid flows and switches between discharge and non-discharge of the drying liquid, and that is configured to allow the drying liquid to be discharged together with impurities generated from the valve after the valve is opened.
4. A substrate processing method according to any one of claims 1 to 3, characterized in that:
further comprising a 3 rd moving step of moving the position of discharging the drying liquid toward the center of the substrate after the 2 nd moving step.
5. The substrate processing method according to claim 4, wherein:
further comprising a maintaining step of maintaining a discharge position of the drying liquid at an outer peripheral portion of the substrate after the 2 nd moving step and before the 3 rd moving step.
6. The substrate processing method according to claim 5, wherein:
further comprising a rotation speed changing step of increasing the rotation speed of the substrate in the maintaining step.
7. The substrate processing method according to claim 5 or 6, wherein:
further comprising a flow rate changing step of increasing the flow rate of the drying liquid in the maintaining step.
8. The substrate processing method according to any one of claims 1 to 4, wherein:
the second moving step moves the position of discharging the drying liquid to the outside of the substrate.
9. A substrate processing apparatus, comprising:
a holding portion capable of rotatably holding the substrate;
a 1 st supply unit including a 1 st nozzle for supplying the processing liquid to the substrate held by the holding unit and a 1 st movement mechanism for moving the 1 st nozzle;
a 2 nd supply unit including a 2 nd nozzle for supplying a drying liquid having a higher volatility than the processing liquid to the substrate held by the holding unit, and a 2 nd movement mechanism for moving the 2 nd nozzle; and
a control unit that controls the 1 st supply unit and the 2 nd supply unit to execute: a treatment liquid supply process of supplying a treatment liquid to the substrate; a two-liquid supply process of supplying the substrate with the treatment liquid and also supplying a drying liquid to the substrate after the treatment liquid supply process; a 1 st movement process of moving a discharge position of the processing liquid to an outer peripheral portion of the substrate in the two-liquid supply process; and a 2 nd movement process of moving the discharge position of the drying liquid toward the outer peripheral portion of the substrate after the 1 st movement process and after a predetermined time has elapsed from the start of the supply of the drying liquid to the substrate.
10. The substrate processing apparatus according to claim 9, wherein:
the 2 nd supply part further includes:
a pipe for supplying the drying liquid to the 2 nd nozzle; and
a valve provided in the pipe and switching between discharge and non-discharge of the drying liquid by opening and closing the pipe,
the closing speed of the valve is set slower than the opening speed.
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| JP2019-112113 | 2019-06-17 | ||
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| TWI776399B (en) * | 2021-02-22 | 2022-09-01 | 頂程國際股份有限公司 | Wet processing apparatus and wet processing method |
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| KR100493849B1 (en) * | 2002-09-30 | 2005-06-08 | 삼성전자주식회사 | Apparatus for drying a wafer |
| JP6118758B2 (en) * | 2014-05-01 | 2017-04-19 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and computer-readable recording medium recording substrate processing program |
| JP6454245B2 (en) * | 2014-10-21 | 2019-01-16 | 東京エレクトロン株式会社 | Substrate liquid processing method, substrate liquid processing apparatus, and computer readable storage medium storing substrate liquid processing program |
| JP6865008B2 (en) * | 2016-09-30 | 2021-04-28 | 芝浦メカトロニクス株式会社 | Substrate processing equipment and substrate processing method |
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| TWI776399B (en) * | 2021-02-22 | 2022-09-01 | 頂程國際股份有限公司 | Wet processing apparatus and wet processing method |
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