JP2020198389A - 基板処理装置及びその制御方法 - Google Patents
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Abstract
Description
図1は、洗浄処理システム1の全体構成の一例を示す横断平面図である。
次に、超臨界処理装置(基板処理装置)3で行われる超臨界流体を用いた乾燥処理の詳細について説明する。まず、超臨界処理装置3においてウエハWが搬入される処理容器の構成例を説明する。
次に、図4及び図5を参照して、メンテナンス用開口321の周囲の構成について更に説明する。図4及び図5は、メンテナンス用開口321の周辺を示す断面図である。
図6は、第1の実施形態における超臨界処理装置3のシステム全体の構成例を示す図である。
次に、超臨界状態の処理流体を用いたIPAの乾燥メカニズムについて説明する。
次に、エジェクタ71aを用いた異物除去処理について説明する。
次に、第2の実施形態について説明する。第2の実施形態は、流体供給タンク51側の供給ラインにもエジェクタが設けられている点で、第1の実施形態と相違する。図13は、第2の実施形態における超臨界処理装置3のシステム全体の構成例を示す図である。
次に、第3の実施形態について説明する。第3の実施形態は、不活性ガスの排気ラインが設けられている点で第1の実施形態と相違する。図14は、第3の実施形態における処理容器301の一部を示す断面図である。
2 洗浄装置
3 超臨界処理装置
4 制御部
51 流体供給タンク
52a〜52l 流通オンオフバルブ
65 排出側供給ライン
66 第1排気ライン
67 第2排気ライン
71a、71b:エジェクタ
72a、72b:流体供給源
301 処理容器
319 処理空間
348 真空吸引管
350 異物
351 パーティクル
W ウエハ
Claims (11)
- 液体により表面が濡れた状態の基板を収容可能な処理空間を有する処理容器と、
前記液体に向けて超臨界状態の処理流体を前記処理空間に供給する処理流体供給部と、
第1の排気源に接続され、前記処理空間を第1の排気圧で排気する第1の排気ラインと、
前記第1の排気源とは異なる第2の排気源に接続され、前記第1の排気源と前記処理空間との間で前記第1の排気ラインに接続され、前記第1の排気ラインを通じて前記処理空間を第2の排気圧で排気する第2の排気ラインと、
前記第2の排気圧を制御する制御部と、
を有し、
前記超臨界状態の処理流体が前記液体に接触して前記基板が乾燥し、
前記制御部は、前記処理流体供給部が前記処理流体を前記処理空間への供給を停止している期間に、前記第2の排気圧を前記第1の排気圧より強くする、基板処理装置。 - 前記制御部は、前記基板の乾燥が完了した後で、前記第2の排気圧を前記第1の排気圧より強くする、請求項1に記載の基板処理装置。
- 前記制御部は、前記処理流体供給部が前記処理流体の供給を開始する前に、前記第2の排気圧を前記第1の排気圧より強くする、請求項1又は2に記載の基板処理装置。
- 前記第1の排気ラインに介設された第1の開閉弁を有し、
前記第2の排気ラインは、前記第1の開閉弁と前記第1の排気源との間に接続されている、請求項1乃至3のいずれか1項に記載の基板処理装置。 - 前記第1の排気ラインの前記第1の開閉弁と前記第1の排気源との間に介設された背圧弁を有し、
前記第2の排気ラインは、前記背圧弁と前記第1の排気源との間に接続されている、請求項4に記載の基板処理装置。 - 前記制御部は、前記第2の排気圧を前記第1の排気圧より強くする時に、前記第1の開閉弁及び前記背圧弁を開状態とする、請求項5に記載の基板処理装置。
- 前記第1の排気ラインは、
前記処理流体が流れる第1の排気管と、
不活性ガスが流れる第2の排気管と、
を有する、請求項1乃至6のいずれか1項に記載の基板処理装置。 - 前記第2の排気源はエジェクタを有する、請求項1乃至7のいずれか1項に記載の基板処理装置。
- 前記エジェクタに流体を供給する排気流体供給部と、
前記排気流体供給部と前記エジェクタとの間に介設され、前記制御部により制御される第2の開閉弁と、
を有する、請求項8に記載の基板処理装置。 - 前記第2の排気源は真空ポンプ有する、請求項1乃至7のいずれか1項に記載の基板処理装置。
- 基板処理装置の制御方法であって、
前記基板処理装置は、
液体により表面が濡れた状態の基板を収容可能な処理空間を有する処理容器と、
前記液体に向けて超臨界状態の処理流体を前記処理空間に供給する処理流体供給部と、
第1の排気源に接続され、前記処理空間を第1の排気圧で排気する第1の排気ラインと、
前記第1の排気源とは異なる第2の排気源に接続され、前記第1の排気源と前記処理空間との間で前記第1の排気ラインに接続され、前記第1の排気ラインを通じて前記処理空間を第2の排気圧で排気する第2の排気ラインと、
前記第2の排気圧を制御する制御部と、
を有し、
前記超臨界状態の処理流体が前記液体に接触して前記基板が乾燥し、
前記処理流体供給部が前記処理流体を前記処理空間への供給を停止している期間に、前記第2の排気圧を前記第1の排気圧より強くする、基板処理装置の制御方法。
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CN202010470221.0A CN112038258A (zh) | 2019-06-04 | 2020-05-28 | 基板处理装置及其控制方法 |
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JP2018093063A (ja) * | 2016-12-02 | 2018-06-14 | 東京エレクトロン株式会社 | 基板処理装置の洗浄方法および基板処理装置の洗浄システム |
JP2018152477A (ja) * | 2017-03-14 | 2018-09-27 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
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JP5522124B2 (ja) | 2011-06-28 | 2014-06-18 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
FR2993614B1 (fr) * | 2012-07-19 | 2018-06-15 | Pfeiffer Vacuum | Procede et dispositif de pompage d'une chambre de procedes |
JP6755776B2 (ja) * | 2016-11-04 | 2020-09-16 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記録媒体 |
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JP2013251550A (ja) * | 2012-05-31 | 2013-12-12 | Semes Co Ltd | 基板乾燥装置及び基板乾燥方法 |
JP2015039040A (ja) * | 2014-11-25 | 2015-02-26 | 東京エレクトロン株式会社 | 処理装置、処理方法及び記憶媒体 |
JP2018093063A (ja) * | 2016-12-02 | 2018-06-14 | 東京エレクトロン株式会社 | 基板処理装置の洗浄方法および基板処理装置の洗浄システム |
JP2018152477A (ja) * | 2017-03-14 | 2018-09-27 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
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US20200388512A1 (en) | 2020-12-10 |
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