JP2020181813A - Vehicular lighting fixture - Google Patents

Abstract

To provide a vehicular lighting fixture that can be downsized and reduce the number of components while having low cost.SOLUTION: A vehicular lighting fixture comprises: a light emitting part 3 for emitting light; and a lens 2 including a plurality of surfaces, on which light from the light emitting part 3 is directly incident, and for forming a predetermined pattern by superimposing emitted light via the respective surfaces. The light emitting part 3 includes: a first semiconductor type light source arranged at a focus of the lens 2 or near the focus, and for causing the lens 2 to form at least a portion of a low beam light distribution pattern; and a second semiconductor type light source arranged below the first semiconductor type light source, and for causing the lens 2 to form an upper light distribution pattern.SELECTED DRAWING: Figure 2

Description

The present invention relates to a vehicle lamp.

Vehicle lighting fixtures that directly incident light from a semiconductor-type light source on a lens and emit the directly incident light from the lens have been conventionally used. Among such vehicle lamps, those that form a low beam and a high beam have been proposed (see, for example, Patent Documents 1 to 3).

Japanese Unexamined Patent Publication No. 2008-084876 JP-A-2009-193953 Japanese Unexamined Patent Publication No. 2014-154356

The prior art described in Patent Document 1 is intended to reduce the size of a lamp by providing a light source for a high beam and a light source for a low beam in one light emitting unit. However, in order to clearly form a predetermined light distribution pattern, for example, a shade is provided between the light emitting portion and the lens. Therefore, the lamp itself becomes heavy and the number of parts increases. Since the conventional technique described in Patent Document 2 is also provided with a shade, the lamp itself is similarly weighted and the number of parts is increased. Further, in the prior art described in Patent Document 3, a lamp unit for a high beam, a lamp unit for a low beam, and a lamp unit for diffused light distribution are provided in one lamp for a vehicle, and each lamp unit is provided. Has different light emitting units, and a plurality of light sources are arranged in each light emitting unit. Therefore, a predetermined light distribution pattern can be formed relatively clearly by a plurality of light sources in each light emitting unit, but the weight and the number of parts are inevitably increased as a whole. Therefore, the prior art as described in Patent Documents 1 to 3 cannot reduce the size of the lamp itself and the number of parts.

The present disclosure has been made in view of such a situation, and makes it possible to reduce the size of the lamp itself and the number of parts.

The vehicle lighting fixture, which is one aspect of the present disclosure, includes a light emitting unit that emits light and a plurality of surfaces, and superimposes the emitted light that directly incidents the light from the light emitting unit and is emitted through each of the surfaces. First, the lens is provided with a lens for forming a predetermined light distribution pattern, and the light emitting unit is arranged at or near the focal point of the lens so that at least a part of the low beam light distribution pattern is formed on the lens. It includes a semiconductor type light source and a second semiconductor type light source that is arranged below the first semiconductor type light source and forms an upper light distribution pattern on the lens.

According to one aspect of the present disclosure, it is possible to reduce the size of the lamp itself and the number of parts.

It is a perspective view of the lighting equipment for a vehicle which concerns on Embodiment 1 to which this disclosure is applied. It is an exploded perspective view of the lighting fixture for a vehicle which concerns on Embodiment 1 to which this disclosure is applied. It is a figure which shows an example of the front view of the light emitting part 3 which concerns on Embodiment 1 to which this disclosure is applied. It is a figure which shows an example of the front view which looked at the incident surface 21 of the lens 2 from the light emitting part 3 which concerns on Embodiment 1 to which this disclosure was applied. FIG. 4 is a cross-sectional view taken along the line AA of FIG. 4 according to the first embodiment to which the present disclosure is applied. It is a figure which shows an example of the light distribution pattern LP for a low beam including the oblique cut offline CL formed by the surface S1 (inclined cut offline formation region) which concerns on Embodiment 1 to which this disclosure is applied. It is a figure which shows an example which represented the light distribution pattern LP for a low beam formed by a lens 2 at the time of lighting of the 1st semiconductor type light source 31 which concerns on Embodiment 1 to which this disclosure is applied by the isoluminous line. It is a figure which shows an example which represented the upper light distribution pattern UP formed by the lens 2 at the time of lighting of the 2nd semiconductor type light source 32 which concerns on Embodiment 1 to which this disclosure is applied by the isoluminous line. An example showing an example in which the high beam light distribution pattern HP formed by the lens 2 when both the first semiconductor type light source 31 and the second semiconductor type light source 32 according to the first embodiment to which the present disclosure is applied is represented by isoluminous lines is shown. It is a figure. It is a perspective view of the 1st lamp unit 8a and the 2nd lamp unit 8b which concerns on Embodiment 2 to which this disclosure is applied. The light distribution pattern SP for focusing, the upper light distribution pattern UP2, and the light distribution pattern WP for diffusion formed by each of the first lighting unit 8a and the second lighting unit 8b according to the second embodiment to which the present disclosure is applied have isoluminous intensity. It is a figure which shows an example represented by a line. It is a figure which shows the other example of the front view of the light emitting part 3 which concerns on Embodiment 1 to which this disclosure is applied.

Hereinafter, embodiments of vehicle lamps to which the present disclosure is applied will be described in detail with reference to the drawings. The present disclosure is not limited by this embodiment.

Embodiment 1.
(Outline configuration)
FIG. 1 is a perspective view of a vehicle lamp according to the first embodiment to which the present disclosure is applied. FIG. 2 is an exploded perspective view of a vehicle lamp according to the first embodiment to which the present disclosure is applied. Vehicle lighting fixtures are provided, for example, on the left and right in front of a vehicle (not shown), have the same configuration on the left and right, and function as headlamps. The vehicle lamp includes a frame 1, a lens 2, a light emitting unit 3, a substrate 4, and a heat sink 6. The heat sink 6 is made of a metal member, a resin member, or the like having high thermal conductivity, and a substrate 4 on which the light emitting unit 3 is mounted is attached via grease 5 that improves heat dissipation performance. The substrate 4 is provided with an electric connector (not shown) for supplying power, and performs various controls such as turning on and off while supplying power to the light emitting unit 3 that emits light. Although the frame 1 functions as a holder for the lens 2, the description of the screw fixing hole, the boss hole, and the like can be easily understood by those skilled in the art, and the description thereof will be omitted.

(Main part composition)
Next, the details of the light emitting unit 3 will be described. FIG. 3 is a diagram showing an example of a front view of the light emitting unit 3 according to the first embodiment to which the present disclosure is applied. The light emitting unit 3 includes a first semiconductor type light source 31 and a second semiconductor type light source 32, each of which is composed of a package sealed with a sealing resin member (not shown). The first semiconductor type light source 31 and the second semiconductor type light source 32 are self-luminous semiconductor type light sources such as LED or OLED (organic EL) or LD (semiconductor laser, laser diode or diode laser), and each of them has a planar rectangular shape. It has a shape (flat rectangular shape). The shapes of the first semiconductor type light source 31 and the second semiconductor type light source 32 may be square. Further, the X axis shown in FIG. 3 is a horizontal axis in the left-right direction passing through the center O of the light emitting surface of the light emitting unit 3. The Y-axis shown in FIG. 3 is a vertical axis in the vertical direction passing through the center O of the light emitting surface of the light emitting unit 3.

The first semiconductor type light source 31 is arranged in the longitudinal direction in the X-axis direction and in the lateral direction along the Y-axis direction, with the center of the first semiconductor type light source 31 as the center O. The second semiconductor type light source 32 is arranged below the first semiconductor type light source 31, is arranged along the X-axis direction in the longitudinal direction, and is arranged along the Y-axis direction in the lateral direction. Has been done. In one example of FIG. 3, the light emitting area of the second semiconductor type light source 32 is smaller than that of the first semiconductor type light source 31. The light emitting area of the second semiconductor type light source 32 may be the same as that of the first semiconductor type light source 31. The brightness of the second semiconductor type light source 32 is the same as or higher than that of the first semiconductor type light source 31. Further, in the example of FIG. 3, since the left side traffic is assumed, the second semiconductor type light source 32 is on the right side of the center O of the first semiconductor type light source 31 when viewed from the front side of the vehicle lamp. Have been placed.

FIG. 4 is a diagram showing an example of a front view of the incident surface 21 of the lens 2 from the light emitting unit 3 according to the first embodiment to which the present disclosure is applied. As shown in FIG. 4, the incident surface 21 of the lens 2 includes a plurality of surfaces S1 to S8. Of the plurality of surfaces S1 to S8, the surface S1 is a part of the upper part of the lens 2 and is formed on the right side, and functions as an inclined cut-off line forming region. The details of the function of the inclined cut offline formation region will be described later. The surface S3 is formed at a position symmetrical to the surface S1 with respect to the Y axis, and has approximately the same surface area as the surface S1. The surface S2 is formed between the surface S1 and the surface S3. The surface S6 is formed at a position symmetrical to the surface S1 with respect to the X axis, and has approximately the same surface area as the surface S1. The surface S4 is formed at a position symmetrical to the surface S3 with respect to the X axis, and has approximately the same surface area as the surface S3. The surface S8 is formed at a position substantially symmetrical with the surface S2 with respect to the X axis. The surface S5 is formed at a position below the surface S4. The surface S7 is formed between the surface S2 and the surface S8, and the line passing through the center coincides with the center O.

FIG. 5 is a sectional view taken along line AA of FIG. 4 according to the first embodiment to which the present disclosure is applied. FIG. 6 is a diagram showing an example of a low beam light distribution pattern LP including an oblique cut-offline CL formed by a surface S1 (inclined cut-off line forming region) according to the first embodiment to which the present disclosure is applied. In FIG. 5, the hatching of the cross section of the lens 2 is intentionally omitted in order to clearly indicate the direction of the light emitted from the light emitting unit 3. Further, in the drawings after FIG. 6, the reference numeral “VU-VD” indicates vertical lines above and below. The code "HL-HR" indicates the left and right horizontal lines.

The Z-axis shown in FIG. 5 is a normal line (perpendicular line) passing through the center O of the first semiconductor type light source 31, that is, in the front-rear direction orthogonal to the X-axis shown in FIGS. 3 and 4 and the Y-axis shown in FIGS. The axis (reference optical axis). That is, the first semiconductor type light source 31 is arranged so that the center O of the first semiconductor type light source 31 faces the front side of the reference optical axis which is the Z axis. In this way, X, Y and Z constitute Cartesian coordinates (XYZ Cartesian coordinate system). Therefore, the center of the orthogonal coordinates coincides with the center O of the first semiconductor type light source 31. As shown in FIG. 5, the center O of the first semiconductor type light source 31 is located near the focal point F or the focal point F of the lens 2, and is located on or near the reference optical axis which is the Z axis. Therefore, the first semiconductor type light source 31 is arranged at the focal point F or the vicinity of the focal point F of the lens 2.

Further, as described above, the second semiconductor type light source 32 is arranged below the first semiconductor type light source 31. The first semiconductor type light source 31 is arranged at the focal point F or the vicinity of the focal point F of the lens 2. Therefore, since the second semiconductor type light source 32 is arranged below the focal point F or the vicinity of the focal point F of the lens 2, it is arranged at a position farther from the focal point F of the lens 2 than the first semiconductor type light source 31. ..

As described above, the center O of the light emitting surface of the first semiconductor type light source 31 is also located on or near the reference optical axis which is the Z axis. Therefore, it can be said that the first semiconductor type light source 31 is arranged on or near the reference optical axis which is the Z axis. On the other hand, since the second semiconductor type light source 32 is arranged on or below the reference optical axis which is the Z axis, the position is farther from the reference optical axis which is the Z axis than the first semiconductor type light source 31. It is located in.

The lens 2 includes an exit surface 22 in addition to the incident surface 21. On the incident surface 21 side, the surfaces S1 and S6 have a convex shape toward the first semiconductor type light source 31. Although not shown, the surfaces S3 and S4 also have a convex shape toward the first semiconductor type light source 31. The lens 2 directly incidents the light from the light emitting unit 3 from the incident surface 21 and emits the emitted light from the emitting surface 22. The surface S1 is formed above the reference optical axis, and is for forming an oblique cut-off line CL of the low beam light distribution pattern LP as shown in FIG. The surface S1 forms a large number of projected image PIs by the light reaching the surface S1. Therefore, as shown in FIG. 6, the oblique cut-off line CL of the low beam light distribution pattern LP is formed by superimposing the projected image PIs of the surface S1 one after another according to the surface shape of the surface S1. Therefore, the lens 2 forms a predetermined light distribution pattern including the oblique cut-off line CL. In particular, the projected image PI of the surface S1 is focused in the vicinity of the oblique cut-off line CL as shown in the optical paths LP1 and LP2 shown in FIG. As a result, the vicinity of the oblique cut-off line CL is formed as a hot zone having a higher luminous intensity than other parts of the low beam light distribution pattern LP. Further, since such a hot zone is formed, the surface S1 also functions as a hot zone forming region. Since the light emitted from the second semiconductor type light source 32 has a longer distance to reach the lens 2 than the light emitted from the first semiconductor type light source 31, the light emitted from the first semiconductor type light source 31 Compared with the projected image PI of the light emitted from the lens 2 by the emitted light, the projected image of the light emitted from the lens 2 by the light emitted from the second semiconductor type light source 32 can be made smaller. As a result, the luminous intensity near the center (near the intersection of the H line and the V line) can be increased, so that it becomes easy to form a high beam light distribution pattern HP having excellent distant visibility. When the sizes of the first semiconductor type light source 31 and the second semiconductor type light source 32 are the same, the brightness (luminous flux) of the first semiconductor type light source 31 <the brightness (luminous flux) of the second semiconductor type light source 32. .. When the first semiconductor type light source 31 is larger than the second semiconductor type light source 32, the brightness (luminous flux) of the first semiconductor type light source 31 ≤ the brightness (luminous flux) of the second semiconductor type light source 32. That is, at least the second semiconductor type light source 32 that emits a high beam irradiates stronger light. The reason is that the high beam light distribution pattern HP, which will be described later, needs to have a brighter light distribution than the low beam light distribution pattern LP.

(Action)
Next, the operation of the vehicle lamp in this embodiment will be described. FIG. 7 is a diagram showing an example in which the low beam light distribution pattern LP formed by the lens 2 when the first semiconductor type light source 31 according to the first embodiment to which the present disclosure is applied is represented by an isoluminous line. The first semiconductor type light source 31 causes the lens 2 to form a low beam light distribution pattern LP. Specifically, the substrate 4 controls the second semiconductor type light source 32 in the extinguished state and controls the first semiconductor type light source 31 in the lit state. Therefore, the light emitting unit 3 emits the light emitted from the first semiconductor type light source 31 to the lens 2. The light emitted from the first semiconductor type light source 31 is refracted into the lens 2 from the incident surface 21 of the lens 2 and is incident. At this time, the incident light is controlled to be distributed on the incident surface 21. The light distribution-controlled incident light is refracted to the outside from the exit surface 22 of the lens 2 and emitted. At this time, the emitted light is light distribution controlled on the emitting surface 22. The emitted light is radiated forward as a low beam light distribution pattern LP. Here, a part of the light emitted from the first semiconductor type light source 31 is incident from the surface S1 and is emitted from the upper part of the exit surface 22.

FIG. 8 is a diagram showing an example in which the upper light distribution pattern UP formed by the lens 2 when the second semiconductor type light source 32 according to the first embodiment to which the present disclosure is applied is represented by an isoluminous line. Since the second semiconductor type light source 32 has a smaller light emitting area than the first semiconductor type light source 31, the projected image PI can be made smaller. Therefore, it can be multiplexed in the central portion of the high beam light distribution pattern HP described later and contribute to the maximum luminous intensity in the central portion.

FIG. 9 shows the high beam light distribution pattern HP formed by the lens 2 when both the first semiconductor type light source 31 and the second semiconductor type light source 32 according to the first embodiment to which the present disclosure is applied are represented by isoluminous lines. It is a figure which shows an example. The high beam light distribution pattern HP is a combination of a plurality of light distribution patterns. Specifically, the substrate 4 controls the first semiconductor type light source 31 to be in the lit state, and also controls the second semiconductor type light source 32 to be in the lit state. Therefore, the light emitting unit 3 emits the light emitted from the first semiconductor type light source 31 and the light emitted from the second semiconductor type light source 32 to the lens 2. The lens 2 irradiates the low beam light distribution pattern LP shown in FIG. 7 and the upper light distribution pattern UP shown in FIG. At this time, the low beam light distribution pattern LP shown in FIG. 7 and the upper light distribution pattern UP shown in FIG. 8 are combined to form the high beam light distribution pattern HP shown in FIG. At this time, the upper light distribution pattern UP shown in FIG. 8 is located above the low beam light distribution pattern LP shown in FIG. That is, the second semiconductor type light source 32 causes the lens 2 to form an upper light distribution pattern UP that irradiates light above the low beam light distribution pattern LP.

(effect)
Next, the effect of the vehicle lamp in this embodiment will be described. Since the light emitted from the second semiconductor type light source 32 has a longer distance to reach the lens 2 than the light emitted from the first semiconductor type light source 31, it is emitted from the first semiconductor type light source 31. The projected image PI of the light emitted from the lens 2 by the light emitted from the second semiconductor type light source 32 can be made smaller than the projected image PI of the light emitted from the lens 2 by the light. Therefore, since the luminous intensity near the center (near the intersection of the H line and the V line) can be increased, it becomes easy to form a high beam light distribution pattern HP having excellent distant visibility. Therefore, it is possible to avoid weight increase and increase in the number of parts as a whole, so that the size of the lamp itself and the number of parts can be reduced.
In addition, when the second semiconductor type light source 32 is mounted on the vehicle, as shown in FIG. 3, the second semiconductor type light source 32 is arranged below the first semiconductor type light source 31 in a front view as viewed from the front side of the vehicle lamp. 1 By arranging the semiconductor type light source 31 on the right side of the center O, the diagonal cut-off line CL is clearly formed in the low beam light distribution, and the high beam light distribution with high luminous intensity near the center also in the high beam light distribution. A pattern HP can be formed.
Specifically, in the lens type light distribution, when irradiating light from an arranged light source, a predetermined light distribution pattern is formed in a direction inverted vertically and horizontally. In the first embodiment, since the second semiconductor type light source 32 is located at the lower left in the vehicle lighting equipment mounted state as shown in FIG. 3, the light distribution pattern is irradiated to the position moved to the upper right.
In other words, when viewed together with FIG. 9, a predetermined light distribution pattern is normally located at the lower left of the intersection of the H line and the V line, but since the top, bottom, left, and right are reversed, H The light is irradiated so that the center of the light source image of the second semiconductor type light source 32 is located near the upper right of the intersection of the line and the V line. Therefore, in the low beam, since the first semiconductor type light source 31 is located at the focal point F of the lens 2, a suitable low beam light distribution can be formed, and in the high beam, the second semiconductor type light source 32 is in the vehicle lamp mounted state. In the above, since the light distribution is shifted to the lower left from the center O of the first semiconductor type light source 31, the optimum light distribution can be formed as the high beam light distribution, and one lens 2 can form the light distribution suitable for two functions. it can.

Further, in the first embodiment, the lens 2 is configured with a surface S1 for forming an oblique cut-off line CL of the low beam light distribution pattern LP. Therefore, since the diagonal cut-off line CL is formed by the surface S1, the luminous intensity in the vicinity of the diagonal cut-off line CL can be increased. Therefore, glare of the low beam light distribution pattern LP can be reliably prevented, and a low beam light distribution pattern LP suitable for vehicle traveling can be provided.
In the first embodiment, the vicinity of the diagonal cut offline CL is defined as the hot zone, but the hot zone is not limited to the vicinity of the diagonal cut offline CL and can be changed as appropriate.

Further, in the first embodiment, the light emitting area of the second semiconductor type light source 32 is the same as that of the first semiconductor type light source 31 or smaller than that of the first semiconductor type light source 31. Since the projected image PI projected on the low beam light distribution pattern LP is determined by the positional relationship between the lens 2 and the first semiconductor type light source 31, the second semiconductor type light source 32 and the first semiconductor type light source 31 are separated from each other. Even if the light source area is the same, the magnitudes of the high beam projected image and the low beam projected image PI can be made different. Therefore, a high beam and a low beam can be realized at a particularly significantly low cost. Further, when the light emitting area of the second semiconductor type light source 32 is smaller than that of the first semiconductor type light source 31, the projected image of the light emitted from the second semiconductor type light source 32 can be further reduced, and the center Since the luminous intensity in the vicinity (near the intersection of the H line and the V line) can be increased, it becomes easy to form a high beam light distribution pattern HP having excellent distant visibility.

Embodiment 2.
In the second embodiment, the description of the same configuration and function as in the first embodiment will be omitted. In the second embodiment, in the vehicle lighting equipment described above, a case where lenses having different configurations of the lenses 2 are used adjacent to each other will be described. FIG. 10 is a perspective view of the first lamp unit 8a and the second lamp unit 8b according to the second embodiment to which the present disclosure is applied. The configuration and function of the first lamp unit 8a are the same as those for the vehicle lamp described in the first embodiment. FIG. 11 shows a light distribution pattern SP for condensing, an upper light distribution pattern UP2, and a light distribution pattern for diffusion formed by each of the first lamp unit 8a and the second lamp unit 8b according to the second embodiment to which the present disclosure is applied. It is a figure which shows an example which represented WP by the isoluminous line. FIG. 11A shows an example in which the light condensing pattern SP for condensing light is represented by an isoluminous line. FIG. 11B shows an example in which the upper light distribution pattern UP2 for the high beam is represented by an isoluminous line. FIG. 11C shows an example in which the diffusion light distribution pattern WP is represented by an isoluminous line.

(Outline configuration)
In the first lamp unit 8a, the lens 2a is fixed by the frame 1a. In the first lamp unit 8a, the light distribution pattern SP for condensing as shown in FIG. 11A by lighting the first semiconductor type light source 31 and the lighting of the second semiconductor type light source 32 are shown in FIG. 11B. Such an upper light distribution pattern UP2 is formed respectively. In the second lamp unit 8b, the lens 2b is fixed by the frame 1b. By constantly lighting the second lamp unit 8b during the low beam and constantly lighting the second lamp unit 8b even during the high beam, the diffusion light distribution pattern WP as shown in FIG. 11C is formed. .. Therefore, a high beam is formed by synthesizing the light distribution pattern SP for focusing, the upper light distribution pattern UP2, and the light distribution pattern WP for diffusion.

(Action effect)
The first lamp unit 8a is assigned the function of forming the light distribution pattern SP for light collection, and the second lamp unit 8b is assigned the function of forming the light distribution pattern WP for diffusion, so that the light is collected and diffused. It can be divided into those for use. Therefore, the design of the vehicle lamp can be improved.

The vehicle lamps to which the present disclosure has been applied have been described above based on the embodiments, but the present disclosure is not limited to this, and changes may be made without departing from the gist of the present disclosure.

Further, for example, since it is assumed that the vehicle travels on the left side, the configuration in which the second semiconductor type light source 32 is arranged on the right side of the center O of the light emitting surface of the light emitting unit 3 when viewed from the front side of the vehicle lighting fixture has been described. However, it is not particularly limited to this. For example, in the case of assuming right-hand traffic, the second semiconductor type light source 32 may be arranged on the left side of the center O of the light emitting surface of the light emitting unit 3.

Further, for example, since the left-hand traffic is assumed, the configuration in which the surface S1 functions as the inclined cut-off line forming region has been described, but the present invention is not particularly limited to this. For example, when the right-hand traffic is assumed, the surface S3 may be configured to function as an inclined cut-off line forming region.

FIG. 12 is a diagram showing another example of the front view of the light emitting unit 3 according to the first embodiment to which the present disclosure is applied. The light emitting unit 3 shown in FIG. 3 is composed of a package in which each of the first semiconductor type light source 31 and the second semiconductor type light source 32 is sealed with a sealing resin member, but the present invention is not limited to this, and FIG. As shown in the above, both the first semiconductor type light source 31 and the second semiconductor type light source 32 may be composed of one package. This is because when the first semiconductor type light source 31 and the second semiconductor type light source 32 are mounted on the substrate 4, the positional relationship between the two can be prevented from being broken.

1,1a, 1b frame, 2,2a, 2b lens, 21 incident surface, 22 exit surface 3 light emitting part, 31 first semiconductor type light source, 32 second semiconductor type light source 4 substrate, 5 grease, 6 heat sink 8a first lamp Unit, 8b 2nd lamp unit S1 plane (tilt cut offline formation area), S2 to S8 plane CL diagonal cut offline, PI projection image O center, F focus LP low beam light distribution pattern UP, UP2 upper light distribution pattern HP high beam Light distribution pattern SP Light distribution pattern for light collection WP Light distribution pattern for diffusion

Claims (5)

A light emitting part that emits light and
A lens that includes a plurality of surfaces, directly incidents light from the light emitting portion, and superimposes emitted light emitted through each of the surfaces to form a predetermined light distribution pattern.
With
The light emitting unit
A first semiconductor type light source that is arranged at or near the focal point of the lens and causes the lens to form at least a part of a low beam light distribution pattern.
A second semiconductor type light source which is arranged below the first semiconductor type light source and causes the lens to form an upper light distribution pattern that irradiates light above the low beam light distribution pattern.
including,
Vehicle lighting equipment. The second semiconductor type light source is
The light emitting area is the same as that of the first semiconductor type light source or smaller than that of the first semiconductor type light source.
The vehicle lighting fixture according to claim 1. A first lamp unit having the light emitting unit and the lens,
A second lamp unit that forms a diffusion light distribution pattern different from the light distribution pattern of the first lamp unit,
To prepare
The vehicle lamp according to claim 1 or 2. The lens is
A part of each of the above surfaces at the upper part of the lens is configured as an inclined cut-off line forming region for forming an oblique cut-off line of the light distribution pattern.
The vehicle lamp according to any one of claims 1 to 3. The lens is
A part of each of the surfaces is configured as a hot zone forming region for forming a hot zone having a higher luminous intensity than the other regions in the light distribution pattern.
The vehicle lamp according to any one of claims 1 to 3.

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