JP2020178027A - Light emitting element and manufacturing method thereof - Google Patents

Abstract

To provide a light emitting element in which deterioration of band characteristics is suppressed, and a manufacturing method thereof.SOLUTION: A light emitting element includes a first columnar body M1 that shares a conductive region 32c and a non-conductive region having a first non-conductive region 32a having a first length provided surrounding the conductive region 32c and a second non-conductive region 32b having a second length shorter than the first length, and has a resonator structure in which the regions are arranged in a predetermined direction in this order, a coupling portion 40, and a second columnar body M2 having a resonator structure, and the length of a part of the second non-conductive region 32b in a direction intersecting a predetermined direction in the second columnar body M2 is shorter than the length of the other second non-conductive region 32b.SELECTED DRAWING: Figure 1

Description

The present invention relates to a light emitting element and a method for manufacturing the light emitting element.

Patent Document 1 includes a surface emitting laser that emits single transverse mode linear polarization in the vertical direction of the substrate on the same semiconductor substrate, and a waveguide that guides light horizontally to the substrate. An optical functional element characterized in that the optical axes of the waveguide intersect is disclosed.

Patent Document 2 describes a first mirror, an active layer formed above the first mirror, a second mirror formed above the active layer, and a current constriction layer formed above or below the active layer. The second mirror has a plurality of recesses arranged in a plane perpendicular to the light emitting direction, and the light confinement region surrounded by the recesses is surrounded by a current constriction layer in a plan view. A surface emitting semiconductor laser formed inside the region is disclosed.

Patent Document 3 describes a light emitting portion formed on a substrate and emitting a laser beam in a direction perpendicular to the substrate, and a light light formed on the substrate and propagating a part of the light emitted by the light emitting portion in a horizontal direction to the substrate. The propagation unit is provided with a light amount adjusting means for adjusting the amount of light propagated by the light propagation unit, and the light propagation unit has a low equivalent refractive index region in which the equivalent refractive index is smaller than the equivalent refractive index of the light emitting portion region. A surface emitting semiconductor laser including a low equivalent refractive index region and a high equivalent refractive index region having a higher equivalent refractive index than the low equivalent refractive index region arranged between the light amount adjusting means is disclosed.

Japanese Unexamined Patent Publication No. 11-274640 Japanese Unexamined Patent Publication No. 2007-189033 Japanese Unexamined Patent Publication No. 2012-049180

An object of the present invention is to provide a light emitting element in which deterioration of band characteristics is suppressed, and a method for manufacturing the light emitting element.

The light emitting element according to the first aspect has a conductive region, a first non-conductive region having a first length provided surrounding the conductive region, and a second having a second length shorter than the first length. A first columnar body having a resonator structure, a coupling portion, and a second columnar body having a resonator structure, which share a non-conductive region including a non-conductive region and are arranged in this order in a predetermined direction. The length of a part of the second non-conductive region in the direction intersecting the predetermined direction in the second columnar body is shorter than the length of the other second non-conductive region. is there.

The light emitting element according to the second aspect is the light emitting element according to the first aspect in which the second non-conductive region is not arranged in a part of the direction intersecting the predetermined direction.

The light emitting element according to the third aspect is the light emitting element according to the first aspect or the second aspect, wherein the resonator structure is formed on a substrate in this order, a first multilayer film reflector, an active region, and a second. The active region forms a part of the conductive region, and is provided on at least one of a plurality of layers of the first multilayer reflector and the second multilayer reflector. The oxide layer forms the non-conductive region.

The light emitting device according to the fourth aspect is the light emitting element according to the third aspect, in which the second non-conductive region is formed of a plurality of oxide layers.

The method for manufacturing a light emitting element according to the fifth aspect prepares a substrate on which a multilayer film structure in which a first multilayer film reflector, an active region, and a second multilayer film reflector are laminated in this order is formed. A step and a step of forming a first columnar body having a resonator structure arranged in this order in a predetermined direction, a coupling portion, and a second columnar body having a resonator structure in the multilayer film structure. By oxidizing the side surfaces of the plurality of layers contained in the multilayer structure, a first non-conductive region having a first length and a second non-conductive region having a second length shorter than the first length are used. Including a step of forming a non-conductive region including a non-conductive region and a step of deleting a part of the second non-conductive region in a direction intersecting the predetermined direction in the second columnar body. It's a waste.

According to the first and fifth aspects, it is possible to provide a light emitting element in which deterioration of band characteristics is suppressed and a method for manufacturing the light emitting element.

According to the second aspect, as compared with the case where the second non-conductive region is arranged in a part of the direction intersecting the predetermined direction, the effect that the deterioration of the band characteristics is suppressed more reliably is achieved. Play.

According to the third aspect, the surface light emitting element having a coupled resonator structure has an effect that deterioration of band characteristics is suppressed.

According to the fourth aspect, it is possible to suppress the deterioration of the band characteristics in the surface-emitting type light emitting element having a coupled resonator structure with higher speed.

(A) is a cross-sectional view and (b) is a plan view showing an example of the configuration of the light emitting element according to the embodiment. It is sectional drawing explaining the operation of the light emitting element which concerns on embodiment. It is a part of the cross-sectional view which shows the manufacturing method of the light emitting element which concerns on embodiment. It is a part of the cross-sectional view which shows the manufacturing method of the light emitting element which concerns on embodiment. (A) is a cross-sectional view showing the configuration of the light emitting element according to the comparative example, and (b) is a plan view showing the cutting position of the second oxidation region of the control unit mesa.

Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the drawings. In the following embodiment, as the light emitting element according to the present invention, a coupling resonator having a structure in which a mesa constituting a driving unit (light emitting unit) and a mesa constituting a control unit (return unit) are coupled at a coupling unit. A surface emitting semiconductor laser (VCSEL: Vertical Cavity Surface Emitting Laser) having a structure will be described as an example.

An example of the configuration of the light emitting element 10 according to the present embodiment will be described with reference to FIG. FIG. 1A is a cross-sectional view of the light emitting element 10 according to the present embodiment, and FIG. 1B is a plan view of the light emitting element 10. The cross-sectional view shown in FIG. 1 (a) is a cross-sectional view taken along the line AA'in the plan view shown in FIG. 1 (b).

As shown in FIG. 1 (a), the light emitting element 10 has an n-type GaAs contact layer 14 formed on a semi-insulating GaAs (gallium arsenide) substrate 12, a lower DBR (Distributed Bragg Reflector) 16, and activity. It is composed of a region 24, a first oxidation region 32a, a second oxidation region 32b, a non-oxidization region 32c, an upper DBR26, a p-side electrode 36, an n-side electrode 30, and a current blocking region 60. The current constriction layer 32 is formed by the first oxidized region 32a and the non-oxidized region 32c. In FIG. 1, the insulating film covering the light emitting element 10, the wiring between the p-side electrode 36 and the p-side electrode pad, the wiring between the n-side electrode 30 and the n-side electrode pad, and the like are omitted. I'm drawing. Here, the first oxidation region 32a and the second oxidation region 32b are examples of the "non-conductive region" according to the present invention, and the non-oxidization region 32c is an example of the "conductive region" according to the present invention. Further, as shown in FIG. 1A, in the present embodiment, as an example, the length of the second oxidation region 32b is shorter than the length of the first oxidation region 32a.

In the present embodiment, a mode in which the number of the second oxidation regions 32b is a plurality (three in the example of FIG. 1A) will be illustrated, but the present invention is not limited to this, and for example, four or more regions may be one or more. Two may be used. Further, in the present embodiment, a form in which the lengths of the plurality of second oxidation regions 32b are equal to each other will be described as an example, but the present invention is not limited to this, and the lengths of the plurality second oxidation regions 32b may be different. For example, the length of each of the plurality of second oxidation regions 32b may be shortened as the distance from the active region 24 increases.

As shown in FIG. 1 (b), the light emitting element 10 has two mesas (columnar bodies, also referred to as posts), that is, mesas M1 constituting the drive unit 62 and mesas M1 constituting the control unit 64, each having a substantially rectangular shape. It is equipped with M2. Further, the light emitting element 10 has a coupling portion 40 at a portion where the mesa M1 and the mesa M2 are connected. The coupling portion 40 according to the present embodiment is provided in the constricted portion of the semiconductor layer formed by connecting the mesas M1 and the mesas M2. Each of the mesas M1 and mesas M2 includes a lower DBR 16, an active region 24, a current constriction layer 32, and an upper DBR 26 that are commonly formed on the contact layer 14.

On the other hand, a current blocking region 60 formed in the upper DBR 26 is arranged between the mesas M1 and the mesas M2, that is, in the coupling portion 40. The current blocking region 60 according to the present embodiment is formed by injecting H + (proton) ions as an example from the upper surfaces of the mesas M1 and M2 to the current constriction layer 32 (that is, to a depth that does not reach the active region 24). This is a high resistance region, which is a region for electrically separating the mesa M1 of the drive unit 62 and the mesa M2 of the control unit 64. The current blocking region 60 is configured to ensure separation between the drive unit 62 and the control unit 64, and the current blocking region 60 may not be used depending on the tolerance of the separation. Further, a groove may be formed instead of introducing impurities. The coupling resonator structure type light emitting element 10 according to the present embodiment includes the driving unit 62 (mesa M1), the control unit 64 (mesa M2), and the coupling unit 40 having the above configuration.

Next, the operation of the light emitting element 10 will be described with reference to FIG. 2A. The drive unit 62 is a VCSEL-type light emitting unit, and basically emits light by vertical resonance (resonance in the Z-axis direction) between the lower DBR 16 and the upper DBR 26, and outputs the output light Lo. When the drive unit 62 emits light, the positive electrode of the power supply is connected to the p-side electrode 36 and the negative electrode is connected to the n-side electrode 30, and a drive current is passed in the −Z direction.

Here, a part of the light generated by the vertical resonance (hereinafter, may be referred to as “oscillation light Lv”) is squeezed out in the + X direction (direction parallel to the substrate 12) shown in FIG. 2A, and the driving unit It propagates from 62 to the control unit 64 via the coupling unit 40 (hereinafter, this light may be referred to as "propagated light"). The propagating light is so-called slow light light propagating between the lower DBR 16 and the upper DBR 26 while repeating reflection. On the other hand, as shown in FIG. 1A, in the light emitting element 10, the first oxidation region 32a is formed in both the mesas M1 and M2. However, the second oxidation region 32b is formed in the mesa M1, but there is a portion not formed in the mesa M2. That is, as shown in FIG. 1 (b), the boundary 18 which is the interface between the tip of the first oxidized region 32a and the non-oxidized region 32c is formed over the entire mesas M1 and M2. On the other hand, the boundary 20 which is the interface between the second oxidized region 32b and the non-oxidized layer is formed in the entire mesa M1 and a part of the mesa M2. That is, the mesa M2 has a region in which the second oxidation region 32b is not formed. In other words, the interface of the mesa M2 intersecting the propagating direction (that is, the + X direction) of the propagating light is an end face S in which the second oxidation region 32b is not formed.

As a result, the propagated light propagated from the drive unit 62 to the control unit 64 is reflected by the end face S of the mesa M2 (hereinafter, the light reflected by the end face S may be referred to as “reflected light Lr”) and is reflected by the drive unit 62. Return. The reflected light Lr returned to the drive unit 62 is superimposed on the oscillation light Lv to improve the modulation characteristics of the drive unit 62 (expand the modulation band). The above is the operating principle of the light emitting element 10 having a coupled resonator structure.

Next, the configuration of the light emitting element 10 will be described in more detail with reference to FIG. 1 again. As an example, a semi-insulating GaAs substrate is used for the substrate 12 according to the present embodiment. The semi-insulating GaAs substrate is a GaAs substrate that is not doped with impurities. The semi-insulating GaAs substrate has a very high resistivity, and its sheet resistance value is about several MΩ.

The contact layer 14 formed on the substrate 12 is formed by, for example, a Si-doped GaAs layer. One end of the contact layer 14 is connected to the n-shaped lower DBR 16 and the other end is connected to the n-side electrode 30. That is, the contact layer 14 has a function of interposing between the lower DBR 16 and the n-side electrode 30 and imparting a constant potential to the semiconductor layer composed of the mesas M1 and M2. The contact layer 14 may also serve as a buffer layer provided to improve the crystallinity of the substrate surface after thermal cleaning.

The n-type lower DBR 16 formed on the contact layer 14 has a thickness of 0.25 λ / n, respectively, when the oscillation wavelength of the light emitting element 10 is λ and the refractive index of the medium (semiconductor layer) is n. In addition, it is a multilayer film reflector configured by alternately and repeatedly laminating two semiconductor layers having different refractive indexes. Specifically, the lower DBR16 alternately alternates between an n-type low refractive index layer made of Al _0.90 Ga _0.1 As and an n-type high refractive index layer made of Al _0.15 Ga _0.85 As. It is constructed by repeatedly laminating. In the light emitting element 10 according to the present embodiment, the oscillation wavelength λ is set to about 850 nm as an example.

The active region 24 according to the present embodiment may include, for example, a lower spacer layer, a quantum well active layer, and an upper spacer layer (not shown). The quantum well active layer according to the present embodiment is composed of, for example, a barrier layer made of four Al _0.3 Ga _0.7 As and a three-layer quantum well layer made of GaAs provided between them. May be done. The lower spacer layer and the upper spacer layer are arranged between the quantum well active layer and the lower DBR16 and between the quantum well active layer and the upper DBR26, respectively, so as to have a function of adjusting the length of the resonator. It also has a function as a clad layer for confining carriers. In the light emitting element 10, since the mesa M1 constitutes a VCSEL, the active region 24 in the mesa M1 functions as a light emitting layer.

The p-type current constriction layer 32 provided on the active region 24 has a function of narrowing the current flowing from the p-side electrode 36 toward the n-side electrode 30 by the non-oxidizing region 32c. As described above, the boundary 18 shown in FIG. 1B represents the interface between the non-oxidized region 32c and the first oxidized region 32a. As shown in FIG. 1 (b), the non-oxidized region 32c according to the present embodiment partitioned by the boundary 18 has a constricted shape at the joint portion 40. The second oxidation region 32b is provided as a means for improving the band of the light emitting element 10 as described later.

The upper DBR26 formed on the current constriction layer 32 is a multilayer film reflector formed by alternately and repeatedly laminating two semiconductor layers having a film thickness of 0.25λ / n and different refractive indexes. .. Specifically, the upper DBR26 alternately alternates between a p-type low refractive index layer made of Al _0.90 Ga _0.1 As and a p-type high refractive index layer made of Al _0.15 Ga _0.85 As. It is constructed by repeatedly laminating.

An emission surface protection film 38 that protects the emission surface of light is provided on the upper DBR 26 (see FIG. 4E). The exit surface protective film 38 is formed by forming a silicon nitride film as an example.

Here, with reference to FIG. 5, the reason why the light emitting element 10 is provided with the region where the second oxidation region 32b is not arranged on the mesa M2 side will be described.

By the way, in general VCSEL (VCSEL with a single mesa), there is a method of reducing the parasitic capacitance in the mesa as one method for speeding up. Further, as a method of reducing the parasitic capacitance in the mesa, there is a method of forming a multilayer oxide layer. The reason why the multilayer oxide layer is formed and the parasitic capacitance is reduced is that the equivalent distance between the P electrode and the N electrode becomes long. On the other hand, in the VCSEL having a coupled resonator structure having a driving mesa and a control mesa, as described above, the end surface of the control mesa intersecting the propagation direction of the slow light light is a reflecting surface of the slow light light.

FIG. 5A shows a light emitting device 100 according to a comparative example in which second oxide regions 32b and 32b', which are multilayer oxide layers, are introduced into a VCSEL having a coupled resonator structure in the same manner as a general VCSEL. 5 (b) shows a plan view of the light emitting element 100, and FIG. 5 (a) shows a cross-sectional view taken along the line BB'in FIG. 5 (b). As shown in FIG. 5A, the light emitting element 100 includes mesas M1 and M2', and a second oxidation region 32b'is also formed in the mesas M2'. When the second oxidation region 32b'is formed in the mesa M2', the refractive index in the second oxidation region 32b is lowered as compared with the end face S of the mesa M2 in which the second oxidation region 32b'is not formed. As a result, as shown in FIG. 5A as scattered light Ls, the propagating light is scattered and the reflected light that does not return to the mesa M1 which is the driving unit increases. Therefore, the band improvement effect of the reflected light is limited.

Therefore, in the present invention, the second oxide region 32b'(the second oxide region 32b' located on the reflection surface of the slow light light) in the direction intersecting the propagation direction of the slow light light is deleted by etching or the like in the manufacturing process. did. However, the oxide layer (first oxide region 32a) constituting the current constriction layer (current constriction layer 32) remains. The CC'line shown in FIG. 5B indicates the position where the mesa M2'is deleted. In the example shown in FIG. 5B, the second oxidation region 32b'is deleted up to the boundary 20 of the portion along the sides H1 and H2 of the mesa M2'. However, the deletion range of the mesa M2'in a plan view is not limited to this, and may be a narrower range or a wider range depending on the generation range of the reflected light Lr and the like. Further, it is not necessary to delete all the second oxidation regions 32b', and they may remain depending on the degree of scattered light Ls and the like.

Next, a method of manufacturing the light emitting element 10 according to the present embodiment will be described with reference to FIGS. 3 and 4. In the present embodiment, a plurality of light emitting elements 10 are formed on one wafer, and one of the light emitting elements 10 will be illustrated and described below.

As shown in FIG. 3A, first, an n-type contact layer 14, an n-type lower DBR 16, an active region 24, and a p-type upper DBR 26 are epitaxially grown on the semi-insulating GaAs substrate 12 in this order. Prepare the wafer.

At that time, the n-type contact layer 14 is formed, for example, with a carrier concentration of about 2 × 10 ¹⁸ cm ^-3 and a film thickness of about 2 μm. Further, as an example, the n-type lower DBR 16 has an Al _0.15 Ga _0.85 As layer and an Al _0.9 Ga _0.1 in which the respective film thicknesses are 1/4 of the wavelength λ / n in the medium. It is formed by alternately stacking As layers for 37.5 cycles. The carrier concentration of the Al _0.3 Ga _0.7 As layer and the carrier concentration of the Al _0.9 Ga _0.1 As layer are each about 2 × 10 ¹⁸ cm ^-3, and the total thickness of the lower DBR 16 is about 4 μm. It is said that. Further, as an n-type carrier, Si (silicon) is used as an example.

Active region 24, as an example, the lower spacer layer according to a non-doped _Al 0.6 _{Ga 0.4} As layer, and the undoped quantum well active layer, an upper non-doped a _Al 0.6 _{Ga 0.4} As layer It is formed by the spacer layer. The quantum well active layer is composed of, for example, a four-layer barrier layer made of Al _0.3 Ga _0.7 As and a three-layer quantum well layer made of GaAs provided between the barrier layers. The film thickness of the barrier layer made of Al _0.3 Ga _0.7 As is about 8 nm, the film thickness of the quantum well layer made of GaAs is about 8 nm, and the film thickness of the entire active region 24 is the wavelength λ / in the medium. It is set to n.

As an example, the p-type upper DBR26 has an Al _0.15 Ga _0.85 As layer and an Al _0.9 Ga _0.1 As layer, each of which has a film thickness of 1/4 of the wavelength λ / n in the medium. And are alternately laminated for 25 cycles. At this time, the carrier concentration of the Al _0.15 Ga _0.85 As layer and the carrier concentration of the Al _0.9 Ga _0.1 As layer are set to about 4 × 10 ¹⁸ cm ^-3 , respectively, and the total film thickness of the upper DBR26 is set to about 4 × 10 ¹⁸ cm ^-3. Is about 3 μm. Further, as the p-type carrier, C (carbon) is used as an example. Further, the layer of the upper DBR26 includes a layer for forming the first oxidation region 32a and the second oxidation region 32b in the step described later (not shown. The composition is different from each layer of the upper DBR26). Further, the uppermost layer of the upper DBR 26 is a contact layer (not shown) for forming ohmic contact with the p-side electrode 36.

Next, after forming a mask by photolithography, proton H + or the like is ion-implanted into the upper DBR26 to form a current blocking region 60 as shown in FIG. 3 (b).

Next, a material to be an exit surface protective film is formed on the upper DBR 26, and then the material is dry-etched using a mask by photolithography, for example, and as shown in FIG. 3C, the exit surface protection film 38 is formed. To form. As an example, a silicon nitride film is used as the material of the exit surface protective film 38.

Next, an electrode material is formed on a contact layer (not shown) which is the uppermost layer of the upper DBR26, and then the material is dry-etched using a mask by photolithography, as shown in FIG. 3 (d). , The p-side electrode 36 to be connected to the p-side electrode wiring 42 (see FIG. 4E) is formed. The p-side electrode 36 is formed by using a Ti / Au laminated film as an example.

Next, a mask is formed on the wafer surface by photolithography and etching, and for example, dry etching is performed using the mask to form a mesa M3 as shown in FIG. 3 (e). The shape of the mesa M3 in a plan view is a shape corresponding to the mesas M1 and M2'shown in FIG. 5 (b).

Next, the wafer is subjected to an oxidation treatment to oxidize the mesa M3 from the side surface, and as shown in FIG. 3 (f), the first oxidation region 32a, the second oxidation region 32b and 32b'are formed in the mesa M3. At that time, the unoxidized region of the first oxidized region 32a becomes the non-oxidized region 32c, and the first oxidized region 32a and the non-oxidized region 32c form the current constriction layer 32. The non-oxidized region 32c is continuously formed from the mesas M1 to M2'as shown in FIG. 3 (f). In the present embodiment, in order to make the length of the second oxidation region 32b in the X-axis direction shorter than the length of the first oxidation region 32a in the X-axis direction, a layer forming the second oxidation region 32b and a first layer. The composition is different from that of the layer forming the monooxidized region 32a. More specifically, the composition ratio of, for example, Al (aluminum) is different between the two.

Next, a mask is formed on the wafer surface by photolithography and etching, and for example, dry etching is performed using the mask to form mesas M1 and M2 as shown in FIG. 4A. That is, a part of the lower DBR 16 and the active region 24 is etched to expose a part of the contact layer 14, and a part of the upper DBR 26 is further etched to remove the second oxidation region 32b'. The end surface S of the mesa M2 from which the second oxidation region 32b'has been deleted becomes a reflection surface of the propagating light propagating from the drive unit 62. By this etching, the shape corresponding to the mesa M2'becomes a shape corresponding to the mesa M2. In this etching, it is not always necessary to delete the entire second oxidation region 32b', and a part may remain in consideration of the intensity of the reflected light Lr and the like. Further, in this example, a mode in which the deletion positions of the lower DBR 16 and the active region 24 and the deletion positions of the upper DBR 26 are different (providing a step in the mesa M2) will be described as an example, but both deletion positions are assumed to be the same position. It may be (see FIG. 1 (a)). Further, in this example, a form in which the p-side electrode 36 is formed on the mesa M2 will be described as an example, but the present invention is not limited to this, and the p-side electrode 36 may not be formed on the mesa M2 side (see FIG. 1A). ..

Next, a mask is formed on the wafer surface by photolithography and etching, and the contact layer 14 is dry-etched, for example, using the mask to separate elements as shown in FIG. 4 (b). In the present embodiment, "element separation" means separating the contact layer 14 from the adjacent light emitting element 10.

Next, after forming an electrode material on the contact layer 14, the material is dry-etched using, for example, a mask by photolithography, and as shown in FIG. 4C, the n-side electrode wiring 44 (FIG. 4 (FIG. 4). The n-side electrode 30 connected to e)) is formed. The n-side electrode 30 is formed by using an AuGe / Ni / Au laminated film as an example.

Next, as shown in FIG. 4D, an insulating film 34 made of a silicon nitride film is formed in a region excluding the exit surface retaining film 38, the p-side electrode 36, and the n-side electrode 30 of the wafer. The insulating film 34 according to the present embodiment is formed of a silicon nitride film (SiN film) as an example. The material of the insulating film 34 is not limited to the silicon nitride film, and may be, for example, a silicon oxide film (SiO ₂ film), a silicon oxynitride film (SiON film), or the like.

Next, after forming an electrode material on the wafer surface, the electrode material is dry-etched using, for example, a photolithographic mask, and as shown in FIG. 4 (e), p connected to the p-side electrode 36. The n-side electrode wiring 44 connected to the side electrode wiring 42 and the n-side electrode 30 is formed. The p-side electrode wiring 42 is connected to the p-side electrode pad (not shown), and the n-side electrode wiring 44 is connected to the n-side electrode pad (not shown). The p-side electrode wiring 42 and the n-side electrode wiring 44 are formed by using a Ti / Au laminated film as an example.

Next, dicing is performed in a dicing region (not shown) on the wafer, and the light emitting element 10 is separated and individualized. By the above steps, the light emitting element 10 according to the present embodiment is manufactured.

In the above embodiment, a substantially rectangular shape has been illustrated as the shape of the two mesas M1 and M2 included in the light emitting element 10, but the shape is not limited to this, and various other forms such as an elliptical shape and a triangular shape are described. May be. Also, the mesas M1 and M2 do not have to have the same shape.

Further, in the above embodiment, the embodiment in which the multilayer oxide layer (second oxide region 32b) is formed in the upper DBR26 has been illustrated and described, but the present invention is not limited to this, and the multilayer oxide layer (second oxide region 32b) may be formed in the lower DBR16.

Further, in each of the above embodiments, the form of a single light emitting element has been illustrated and described, but the present invention is not limited to this, and a light emitting element array in which a plurality of light emitting elements according to the above embodiments are formed on a single substrate. It may be in the form of.

Further, in the above embodiment, a GaAs-based light emitting device using a semi-insulating GaAs substrate has been described as an example, but the present invention is not limited to this, and the substrate is made of GaN (gallium nitride) or InP (indium phosphide). It may be in the form of using the substrate according to.

Further, in the above-described embodiment, the embodiment in which the n-type contact layer is formed on the substrate has been described as an example, but the present invention is not limited to this, and a p-type contact layer may be formed on the substrate. In that case, the n-type and the p-type may be read in reverse in the above description.

10, 100 Light emitting element 12 Substrate 14 Contact layer 16 Lower DBR
18 Boundary 20 Boundary 24 Active region 26 Upper DBR
30 n-side electrode 32 Current constriction layer 32a First oxidation region 32b, 32b'Second oxidation region 32c Non-oxidization region 34 Insulation film 36 p-side electrode 38 Exit surface protection film 40 Bonding part 42 p-side electrode wiring 44 n-side electrode wiring 60 Current blocking region 62 Drive unit 64 Control unit H1, H2 Side Lr Reflected light Lo Output light Ls Scattered light Lv Oscillated light S End face M1, M2, M2', M3 mesa

Claims (5)

A conductive region and a non-conductive region including a first non-conductive region having a first length and a second non-conductive region having a second length shorter than the first length provided surrounding the conductive region. Includes a first columnar body having a resonator structure, a coupling portion, and a second columnar body having a resonator structure that are shared and arranged in this order in a predetermined direction.
A light emitting element in which the length of a part of the second non-conductive region in the direction intersecting the predetermined direction in the second columnar body is shorter than the length of the other second non-conductive region. The light emitting element according to claim 1, wherein the second non-conductive region is not arranged in a part of a direction intersecting the predetermined direction. The cavity structure comprises a first multilayer reflector, an active region, and a second multilayer reflector formed on the substrate in this order.
The active region forms a part of the conductive region, and an oxide layer provided on at least one of a plurality of layers of the first multilayer reflector and the second multilayer reflector forms the non-conductive region. The light emitting element according to claim 1 or 2, which is formed. The light emitting device according to claim 3, wherein the second non-conductive region is formed of a plurality of oxide layers. A step of preparing a substrate on which a multilayer film structure in which a first multilayer film reflector, an active region, and a second multilayer film reflector are laminated in this order is formed.
A step of forming a first columnar body having a resonator structure, a coupling portion, and a second columnar body having a resonator structure in the multilayer film structure, which are arranged in a predetermined direction in this order.
The side surfaces of the plurality of layers contained in the multilayer structure are oxidized to form a first non-conductive region having a first length and a second non-conductive region having a second length shorter than the first length. The process of forming a non-conductive region including the region,
A method for manufacturing a light emitting element, comprising a step of deleting a part of the second non-conductive region in a direction intersecting the predetermined direction in the second columnar body.