JP2020169891A - Sulfurization detection sensor, manufacturing method for sulfurization detection sensor, and mounting method for sulfurization detection sensor - Google Patents

Sulfurization detection sensor, manufacturing method for sulfurization detection sensor, and mounting method for sulfurization detection sensor Download PDF

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JP2020169891A
JP2020169891A JP2019071426A JP2019071426A JP2020169891A JP 2020169891 A JP2020169891 A JP 2020169891A JP 2019071426 A JP2019071426 A JP 2019071426A JP 2019071426 A JP2019071426 A JP 2019071426A JP 2020169891 A JP2020169891 A JP 2020169891A
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sulfurization
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松本 健太郎
Kentaro Matsumoto
健太郎 松本
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Abstract

To provide a sulfurization detection sensor capable of accurately detecting the degree of sulfurization, and manufacturing and mounting methods for the sulfurization detection sensor.SOLUTION: A sulfurization detection sensor 10 comprises: a sulfurization detection conductor 2 and a pair of internal electrodes 7 provided in the surface of an insulating substrate 1; a sulfide gas permeable protective film 3 covering the sulfurization detection conductor 2; a pair of reverse electrodes 4 provided at both ends in a longitudinal direction on the reverse side of the insulating substrate 1; a pair of end-face electrodes 5 provided at both end faces in the longitudinal direction of the insulating substrate 1; a pair of heat-resistant barrier layers 6 provided on the surfaces of the internal electrode 7, the reverse electrode 4 and the end-face electrode 5 and composed of a Ni material; and an external electrode 8 continuously covering the surfaces of the pair of heat-resistant barrier layers 6 and the protective film 3 and composed of a Sn material. When the sulfurization detection sensor 10 is joined by soldering to a circuit board 11, the external electrode 8 covering the protective film 3 is eaten by solder and disappears, so that the protective film 3 covering the sulfurization detection conductor 2 is exposed to the outside.SELECTED DRAWING: Figure 5

Description

本発明は、腐食環境の累積的な硫化量を検出するための硫化検出センサと、そのような硫化検出センサの製造方法および実装方法に関する。 The present invention relates to a sulfurization detection sensor for detecting the cumulative amount of sulfurization in a corrosive environment, and a method for manufacturing and mounting such a sulfurization detection sensor.

一般的にチップ抵抗器等の電子部品の内部電極としては、比抵抗の低いAg(銀)系の電極材料が使用されているが、銀は硫化ガスに曝されると硫化銀となり、硫化銀は絶縁物であることから、電子部品が断線してしまうという不具合が発生してしまう。そこで近年では、AgにPd(パラジウム)やAu(金)を添加して硫化しにくい電極を形成したり、電極に硫化ガスが到達しにくい構造とする等の硫化対策が講じられている。 Generally, Ag (silver) -based electrode materials with low resistivity are used as internal electrodes of electronic components such as chip resistors, but silver becomes silver sulfide when exposed to sulfide gas, and silver sulfide. Since is an insulator, there is a problem that the electronic component is broken. Therefore, in recent years, sulfurization measures have been taken, such as adding Pd (palladium) or Au (gold) to Ag to form an electrode that is difficult to sulfurize, or making the structure so that sulfurized gas does not easily reach the electrode.

しかし、このような硫化対策を電子部品に講じたとしても、当該電子部品が硫化ガス中に長期間曝された場合や高濃度の硫化ガスに曝された場合は、断線を完全に防ぐことが難しくなるため、未然に断線を検知して予期せぬタイミングでの故障発生を防止することが必要となる。 However, even if such sulfurization measures are taken for electronic components, disconnection can be completely prevented when the electronic components are exposed to sulfurized gas for a long period of time or exposed to high-concentration sulfurized gas. Since it becomes difficult, it is necessary to detect the disconnection in advance and prevent the occurrence of failure at an unexpected timing.

そこで従来より、特許文献1に記載されているように、電子部品の累積的な硫化の度合いを検出して、電子部品が硫化断線する等して故障する前に危険性を検出可能とした硫化検出センサが提案されている。 Therefore, conventionally, as described in Patent Document 1, sulfurization that can detect the degree of cumulative sulfurization of an electronic component and detect the risk before the electronic component fails due to sulfurization disconnection or the like. Detection sensors have been proposed.

特許文献1に記載された硫化検出センサは、絶縁基板上にAgを主体とした硫化検出導体を形成し、この硫化検出導体を覆うように透明で硫化ガス透過性のある保護膜を形成すると共に、絶縁基板の両側端部に硫化検出導体に接続する端面電極を形成した構成となっている。このように構成された硫化検出センサは、硫化ガスを含む雰囲気中に配置されると、時間経過に伴って硫化ガスが保護膜を透過して硫化検出導体に接するため、硫化ガスの濃度と経過時間に応じて硫化検出導体が硫化されていく。硫化検出導体は、硫化の度合いが進むにつれて銀色から薄茶色、紫色、灰色、黒色の順に変化していき、また、硫化検出導体を構成する銀が硫化銀に変化するため、硫化の度合いが進むにつれて抵抗値が次第に上昇していく。 The sulfurization detection sensor described in Patent Document 1 forms a sulfurization detection conductor mainly composed of Ag on an insulating substrate, and forms a transparent and sulfide gas permeable protective film so as to cover the sulfurization detection conductor. , The end face electrodes connected to the sulfurization detection conductor are formed on both side ends of the insulating substrate. When the sulfurization detection sensor configured in this way is placed in an atmosphere containing a sulfurization gas, the sulfurization gas permeates the protective film and comes into contact with the sulfurization detection conductor over time, so that the concentration and progress of the sulfurization gas. The sulfurization detection conductor is sulfurized with time. The sulfurization detection conductor changes in the order of silver to light brown, purple, gray, and black as the degree of sulfurization progresses, and the silver constituting the sulfurization detection conductor changes to silver sulfide, so that the degree of sulfurization progresses. The resistance value gradually increases as it increases.

そして、チップ抵抗器等の他の電子部品が実装されている回路基板に硫化検出回路を設けると共に、この硫化検出回路に上記構成の硫化検出センサを接続しておき、硫化の度合いに伴って変化する硫化検出導体に光を照射することによる反射光の光量を検出したり、硫化の度合いに伴って変化する硫化検出導体の抵抗値を検出することにより、累積的な硫化の度合いを検出するようにしている。 Then, a sulfurization detection circuit is provided on a circuit board on which other electronic components such as a chip resistor are mounted, and a sulfurization detection sensor having the above configuration is connected to this sulfurization detection circuit, which changes according to the degree of sulfurization. By detecting the amount of reflected light by irradiating the sulfurization detection conductor with light, or by detecting the resistance value of the sulfurization detection conductor that changes with the degree of sulfurization, the cumulative degree of sulfurization is detected. I have to.

特開2009−250611号公報Japanese Unexamined Patent Publication No. 2009-250611

しかし、硫化検出センサ等の電子部品は、製造されてから回路基板に搭載されて使用されるまでの時間がバラバラであるため、その間に上記構成の硫化検出センサが硫化ガスに曝されてしまうと、回路基板に搭載される前に硫化検出導体が硫化されてしまうことになる。すなわち、硫化検出センサの保管場所等の外部環境により、回路基板に搭載する時点で硫化検出導体の硫化がある程度進行していることがあるため、累積的な硫化の度合いを正確に検出することができなくなる。 However, since electronic components such as sulfurization detection sensors have different times from being manufactured to being mounted on a circuit board and used, if the sulfurization detection sensor having the above configuration is exposed to sulfurized gas during that time. , The sulfurization detection conductor will be sulfurized before it is mounted on the circuit board. That is, due to the external environment such as the storage location of the sulfurization detection sensor, the sulfurization of the sulfurization detection conductor may have progressed to some extent at the time of mounting on the circuit board, so that the cumulative degree of sulfurization can be accurately detected. become unable.

本発明は、このような従来技術の実情に鑑みてなされたもので、その第1の目的は、硫化の度合いを正確に検出することができる硫化検出センサを提供することにあり、第2の目的は、そのような硫化検出センサの製造方法を提供することにあり、第3の目的は、そのような硫化検出センサの実装方法を提供することにある。 The present invention has been made in view of such an actual situation of the prior art, and a first object thereof is to provide a sulfurization detection sensor capable of accurately detecting the degree of sulfurization, and a second object thereof. An object is to provide a method of manufacturing such a sulfurization detection sensor, and a third object is to provide a method of mounting such a sulfurization detection sensor.

上記第1の目的を達成するために、本発明の硫化検出センサは、直方体形状の絶縁基板と、この絶縁基板の主面上の両端部に設けられた一対の内部電極と、これら一対の内部電極間に設けられた硫化検出導体と、この硫化検出導体を覆うように設けられた硫化ガス透過性の保護膜と、この保護膜の両端部に前記内部電極を覆うように設けられたニッケルを主成分とする一対の耐熱バリヤー電極と、これら一対の耐熱バリヤー電極を覆う半田材料からなる外部電極とを備え、一対の前記耐熱バリヤー電極を覆う前記外部電極は、前記保護膜を覆う位置まで連続して設けられていることを特徴としている。 In order to achieve the first object, the sulfurization detection sensor of the present invention comprises a rectangular body-shaped insulating substrate, a pair of internal electrodes provided at both ends on the main surface of the insulating substrate, and a pair of internal electrodes. A sulfide detection conductor provided between the electrodes, a sulfide gas permeable protective film provided so as to cover the sulfide detection conductor, and nickel provided so as to cover the internal electrodes at both ends of the protective film. A pair of heat-resistant barrier electrodes as main components and an external electrode made of a solder material covering the pair of heat-resistant barrier electrodes are provided, and the external electrodes covering the pair of heat-resistant barrier electrodes are continuous up to a position covering the protective film. The feature is that it is provided.

このように構成された硫化検出センサでは、硫化検出導体を覆っている硫化ガス透過性の保護膜が半田材料からなる外部電極で覆われているため、回路基板に搭載されるまでの保管時や搬送時等の非使用中に硫化ガスに曝されたとしても、硫化ガスの遮断機能を有する外部電極によって硫化検出導体の硫化が阻止される。そして、硫化検出センサを回路基板に搭載した後、外部電極を回路基板の配線パターンに半田接合すると、ニッケルを主成分とする耐熱バリヤー電極を覆う位置に設けられていた外部電極は絶縁基板の両端部に残るが、保護膜を覆う位置に設けられていた外部電極は、半田喰われにより耐熱バリヤー電極を覆う外部電極側に吸収されて消失する。その結果、硫化検出導体を覆っている硫化ガス透過性の保護膜が外部に露出するため、使用時には保護膜を透して硫化する硫化検出導体によって硫化の度合いを正確に検出することができる。 In the sulfurization detection sensor configured in this way, the sulfurization gas permeable protective film covering the sulfurization detection conductor is covered with an external electrode made of a solder material, so that it can be stored until it is mounted on the circuit board. Even if it is exposed to sulfurized gas during non-use such as during transportation, the sulfurization of the sulfurized detection conductor is prevented by the external electrode having a function of blocking the sulfurized gas. Then, after mounting the sulfurization detection sensor on the circuit board, when the external electrodes are solder-bonded to the wiring pattern of the circuit board, the external electrodes provided at the positions covering the heat-resistant barrier electrodes containing nickel as the main component are on both ends of the insulating substrate. Although it remains in the portion, the external electrode provided at the position covering the protective film is absorbed by the external electrode side covering the heat-resistant barrier electrode due to solder eating and disappears. As a result, the sulfide gas permeable protective film covering the sulfurization detection conductor is exposed to the outside, so that the degree of sulfurization can be accurately detected by the sulfurization detection conductor that sulfides through the protective film during use.

上記第2の目的を達成するために、本発明による硫化検出センサの製造方法は、絶縁基板の主面に銀を主成分とする硫化検出体と該硫化検出体の両端部に連続する一対の内部電極とを形成する工程と、前記硫化検出体の表面に硫化ガス透過性の保護膜を形成する工程と、前記内部電極を覆うようにニッケルを主成分とする一対の耐熱バリヤー電極を形成する工程と、一対の前記耐熱バリヤー電極と前記保護膜を連続的に覆う半田材料からなる外部電極を形成する工程と、を含むことを特徴としている。 In order to achieve the second object, the method for manufacturing a sulfide detection sensor according to the present invention comprises a sulfide detector containing silver as a main component on the main surface of the insulating substrate and a pair of sulfide detectors continuous on both ends of the sulfide detector. A step of forming the internal electrode, a step of forming a sulfide gas permeable protective film on the surface of the sulfide detector, and a pair of heat-resistant barrier electrodes containing nickel as a main component are formed so as to cover the internal electrode. It is characterized by including a step and a step of forming an external electrode made of a solder material that continuously covers the pair of the heat-resistant barrier electrodes and the protective film.

上記第3の目的を達成するために、本発明による硫化検出センサの実装方法は、上記構成の硫化検出センサを回路基板に搭載し、前記外部電極と前記回路基板の配線パターンとの間を半田接合するときに、前記保護膜を覆っている前記外部電極が、溶融半田に溶け出して前記耐熱バリヤー電極を覆う前記外部電極側に吸収されて消失することにより、硫化ガス透過性の前記保護膜を外部に露出させるようにしたことを特徴としている。 In order to achieve the third object, the method for mounting the sulfide detection sensor according to the present invention is to mount the sulfide detection sensor having the above configuration on a circuit board and solder between the external electrode and the wiring pattern of the circuit board. At the time of joining, the external electrode covering the protective film melts into the molten solder and is absorbed by the external electrode side covering the heat-resistant barrier electrode and disappears, so that the protective film permeable to sulfide gas is obtained. Is characterized by being exposed to the outside.

このように外部電極によって耐熱バリヤー電極と保護膜が覆われている硫化検出センサを回路基板に搭載した後、回路基板の配線パターンに半田接合すると、ニッケルを主成分とする耐熱バリヤー電極を覆う位置に設けられていた外部電極は絶縁基板の両端部上に残るが、保護膜を覆う位置に設けられていた外部電極が、半田喰われにより耐熱バリヤー電極を覆う外部電極側に吸収されて消失するため、硫化検出導体を覆う硫化ガス透過性の保護膜が外部に露出する。これにより、硫化検出センサが回路基板に搭載されるまでの保管時や搬送時等の非使用中に硫化ガスに曝されたとしても、硫化ガスの遮断機能を有する外部電極によって硫化検出導体の硫化を阻止することができ、硫化検出センサを回路基板に実装後の使用状態では、保護膜を透して硫化する硫化検出導体によって硫化の度合いを正確に検出することができる。 After mounting the sulfurization detection sensor whose heat-resistant barrier electrode and protective film are covered by an external electrode on the circuit board in this way, when solder-bonded to the wiring pattern of the circuit board, the position that covers the heat-resistant barrier electrode containing nickel as the main component is covered. The external electrodes provided in the above remain on both ends of the insulating substrate, but the external electrodes provided at the positions covering the protective film are absorbed by the external electrodes covering the heat-resistant barrier electrode due to solder eating and disappear. Therefore, the sulfide gas permeable protective film covering the sulfide detection conductor is exposed to the outside. As a result, even if the sulfurization detection sensor is exposed to sulfurization gas during storage or transportation until it is mounted on the circuit board, the sulfurization of the sulfurization detection conductor is carried out by an external electrode having a sulfurization gas blocking function. In the state of use after mounting the sulfurization detection sensor on the circuit board, the degree of sulfurization can be accurately detected by the sulfurization detection conductor that sulfides through the protective film.

本発明によれば、回路基板に実装する前の非使用時に硫化検出センサが不所望に硫化してしまうことを防止できると共に、回路基板に実装後は硫化の度合いを正確に検出することができる。 According to the present invention, it is possible to prevent the sulfurization detection sensor from undesirably sulfurizing when not in use before mounting on the circuit board, and it is possible to accurately detect the degree of sulfurization after mounting on the circuit board. ..

本発明の実施形態例に係る硫化検出センサの平面図である。It is a top view of the sulfurization detection sensor which concerns on embodiment of this invention. 図1のII−II線に沿う断面図である。It is sectional drawing which follows the line II-II of FIG. 該硫化検出センサの製造工程を示す平面図である。It is a top view which shows the manufacturing process of the sulfurization detection sensor. 該硫化検出センサの製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the sulfurization detection sensor. 該硫化検出センサを回路基板に実装する手順を示す説明図である。It is explanatory drawing which shows the procedure of mounting the sulfurization detection sensor on a circuit board.

以下、発明の実施の形態について図面を参照しながら説明すると、図1は本発明の実施形態例に係る硫化検出センサの平面図、図2(a),(b)は図1のII−II線に沿う断面図である。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of a sulfurization detection sensor according to an example of the embodiment of the present invention, and FIGS. 2 (a) and 2 (b) are II-II of FIG. It is a cross-sectional view along the line.

図1と図2に示すように、本実施形態例に係る硫化検出センサ10は、直方体形状の絶縁基板1と、絶縁基板1の表面上に設けられた硫化検出導体2および一対の内部電極7と、この硫化検出導体2を覆うように設けられた保護膜3と、絶縁基板1の裏面の長手方向両端部に設けられた一対の裏電極4と、絶縁基板1の長手方向両端面に設けられた一対の端面電極5と、内部電極7とそれに対応する裏電極4および端面電極5の表面に設けられた一対の耐熱バリヤー層6と、これら耐熱バリヤー層6と保護膜3を連続的に覆うように設けられた外部電極8と、によって主として構成されている。 As shown in FIGS. 1 and 2, the sulfurization detection sensor 10 according to the present embodiment includes a rectangular-shaped insulating substrate 1, a sulfurization detection conductor 2 provided on the surface of the insulating substrate 1, and a pair of internal electrodes 7. A protective film 3 provided so as to cover the sulfide detection conductor 2, a pair of back electrodes 4 provided on both ends in the longitudinal direction of the back surface of the insulating substrate 1, and both end surfaces in the longitudinal direction provided on the insulating substrate 1. The pair of end face electrodes 5 provided, the pair of heat-resistant barrier layers 6 provided on the surfaces of the internal electrodes 7, the back electrodes 4 corresponding to the internal electrodes 7, and the end face electrodes 5, and these heat-resistant barrier layers 6 and the protective film 3 are continuously formed. It is mainly composed of an external electrode 8 provided so as to cover the surface.

絶縁基板1は、後述する大判基板を縦横の分割溝に沿って分割して多数個取りされたものであり、大判基板の主成分はアルミナを主成分とするセラミックス基板である。 The insulating substrate 1 is obtained by dividing a large-format substrate, which will be described later, along vertical and horizontal dividing grooves and taking a large number of the insulating substrate 1, and the main component of the large-format substrate is a ceramic substrate containing alumina as a main component.

硫化検出導体2と一対の内部電極7は、銀を主成分とするAg系ペーストをスクリーン印刷して乾燥・焼成したものである。ここで、硫化検出導体2と一対の内部電極7は、図2(a)に示すように、別々に形成されて連続する構造としても良く、図2(b)に示すように、同時形成されて膜厚が均一の一体構造としても良い。 The sulfurization detection conductor 2 and the pair of internal electrodes 7 are obtained by screen-printing an Ag-based paste containing silver as a main component, drying and firing. Here, the sulfurization detection conductor 2 and the pair of internal electrodes 7 may be formed separately and have a continuous structure as shown in FIG. 2A, or may be formed simultaneously as shown in FIG. 2B. An integrated structure having a uniform film thickness may be used.

保護膜3は、硫化ガス透過性の材料からなり、シリコン樹脂やフッ素樹脂等の樹脂ペースト等をスクリーン印刷して加熱硬化させたものである。後述するように、硫化検出センサ10が回路基板に実装されて硫化ガスの検出に使用される際に、保護膜3は硫化検出導体2を覆って外部に露出するようになっており、その際に保護膜3が硫化検出導体2に対する外部からの接触や湿度等の影響を受け難くしている。 The protective film 3 is made of a sulfide gas permeable material, and is obtained by screen-printing a resin paste such as a silicone resin or a fluororesin and heat-curing it. As will be described later, when the sulfurization detection sensor 10 is mounted on a circuit board and used for detecting sulfurization gas, the protective film 3 covers the sulfurization detection conductor 2 and is exposed to the outside. In addition, the protective film 3 makes it less susceptible to external contact with the sulfurization detection conductor 2, humidity, and the like.

一対の裏電極4は銀を主成分とするAg系ペーストをスクリーン印刷して乾燥・焼成したものであり、これら裏電極4と硫化検出導体2および内部電極7は、別工程で形成しても良いが、同時に形成しても良い。 The pair of back electrodes 4 are made by screen-printing an Ag-based paste containing silver as a main component, drying and firing, and the back electrodes 4, the sulfurization detection conductor 2 and the internal electrode 7 may be formed in separate steps. It is good, but it may be formed at the same time.

一対の端面電極5は、絶縁基板1の端面にNi/Crをスパッタしたり、Ag系ペーストを塗布して加熱硬化させたものであり、これら端面電極5は内部電極7とそれに対応する裏電極4との間を導通するように形成されている。 The pair of end face electrodes 5 are those obtained by sputtering Ni / Cr on the end faces of the insulating substrate 1 or applying Ag-based paste and curing by heating. These end face electrodes 5 are an internal electrode 7 and a corresponding back electrode. It is formed so as to be conductive with 4.

一対の耐熱バリヤー層6は電解メッキによって形成されたNiメッキ層であり、これら耐熱バリヤー層6により、内部電極7と端面電極5および裏電極4の表面とが断面コ字状に被覆されている。 The pair of heat-resistant barrier layers 6 are Ni-plated layers formed by electrolytic plating, and the surfaces of the internal electrode 7, the end face electrode 5, and the back electrode 4 are covered with the heat-resistant barrier layer 6 in a U-shaped cross section. ..

一対の外部電極8は電解メッキによって形成されたSnメッキ層であり、この外部電極8によって一対の耐熱バリヤー層6と保護膜3の表面が連続的に被覆されている。 The pair of external electrodes 8 are Sn-plated layers formed by electrolytic plating, and the surfaces of the pair of heat-resistant barrier layers 6 and the protective film 3 are continuously coated by the external electrodes 8.

次に、このように構成された硫化検出センサ10のうち、図2(b)に示す構成の硫化検出センサ10の製造工程について、図3と図4を用いて説明する。なお、図3(a)〜(f)はこの製造工程で用いられる大判基板を表面的に見た平面図、図4(a)〜(f)は図3(a)〜(f)の長手方向中央部に沿った1チップ相当分の断面図をそれぞれ示している。 Next, among the sulfurization detection sensors 10 configured in this way, the manufacturing process of the sulfurization detection sensor 10 having the configuration shown in FIG. 2B will be described with reference to FIGS. 3 and 4. 3 (a) to 3 (f) are plan views of the large-format substrate used in this manufacturing process as seen on the surface, and FIGS. 4 (a) to 4 (f) are the lengths of FIGS. 3 (a) to 3 (f). Cross-sectional views corresponding to one chip along the central portion of the direction are shown.

まず、図3(a)と図4(a)に示すように、絶縁基板1が多数個取りされる大判基板10Aを準備する。この大判基板10Aには予め1次分割溝と2次分割溝が格子状に設けられており、両分割溝によって区切られたマス目の1つ1つが1個分のチップ領域となる。図3には1個分のチップ領域に相当する大判基板10Aが代表して示されているが、実際は多数個分のチップ領域に相当する大判基板に対して以下に説明する各工程が一括して行われる。 First, as shown in FIGS. 3A and 4A, a large-format substrate 10A on which a large number of insulating substrates 1 are taken is prepared. The large-format substrate 10A is provided with a primary dividing groove and a secondary dividing groove in a grid pattern in advance, and each of the squares divided by the two dividing grooves serves as a chip region for one piece. In FIG. 3, a large-format substrate 10A corresponding to one chip region is represented as a representative, but in reality, each step described below is collectively applied to a large-format substrate corresponding to a large number of chip regions. Is done.

すなわち、図3(b)と図4(b)に示すように、この大判基板10Aの表面にAgを主成分とするAg系ペーストをスクリーン印刷した後、これを乾燥・焼成することにより、大判基板10Aの表面全体を覆う硫化検出導体2と一対の内部電極7とを同時に形成する。また、これと同時あるいは前後して、大判基板10Aの裏面にAg系ペーストをスクリーン印刷した後、これを乾燥・焼成することにより、所定間隔を存して対向する一対の裏電極4を形成する。なお、図3(b)と図4(b)に示すように、硫化検出導体2と内部電極7を同時に形成した場合は、図中の中央部分が硫化検出導体2、両端部分が一対の内部電極7となる。ただし、硫化検出導体2と内部電極7は別々に形成しても良く、その場合、一対の内部電極7を所定間隔を存して形成した後、その間に硫化検出導体2を形成して端部どうしを重ね合わせれば良い(図2(a)参照)。 That is, as shown in FIGS. 3 (b) and 4 (b), an Ag-based paste containing Ag as a main component is screen-printed on the surface of the large-format substrate 10A, and then dried and fired to obtain a large-format substrate. A sulfide detection conductor 2 that covers the entire surface of the substrate 10A and a pair of internal electrodes 7 are simultaneously formed. Further, at the same time or before and after this, an Ag-based paste is screen-printed on the back surface of the large-format substrate 10A, and then dried and fired to form a pair of back electrodes 4 facing each other at predetermined intervals. .. As shown in FIGS. 3 (b) and 4 (b), when the sulfurization detection conductor 2 and the internal electrode 7 are formed at the same time, the central portion in the drawing is the sulfurization detection conductor 2 and both end portions are a pair of internal parts. It becomes the electrode 7. However, the sulfurization detection conductor 2 and the internal electrode 7 may be formed separately. In that case, a pair of internal electrodes 7 are formed at a predetermined interval, and then the sulfurization detection conductor 2 is formed between them to form an end portion. It suffices to overlap each other (see FIG. 2A).

次に、一対の内部電極7間に位置する硫化検出導体2を覆うようにシリコン樹脂やフッ素樹脂等の樹脂ペースト等をスクリーン印刷し、これを加熱硬化することにより、図3(c)と図4(c)に示すように、硫化検出導体2を覆う硫化ガス透過性の保護膜3を形成する。この保護膜3は硫化検出導体2だけを覆っており、一対の内部電極7は保護膜3に覆われずに露出している。 Next, a resin paste such as a silicone resin or a fluororesin is screen-printed so as to cover the sulfurization detection conductor 2 located between the pair of internal electrodes 7, and this is heat-cured to be shown in FIG. 3 (c). As shown in 4 (c), a sulfide gas permeable protective film 3 covering the sulfide detection conductor 2 is formed. The protective film 3 covers only the sulfurization detection conductor 2, and the pair of internal electrodes 7 are exposed without being covered by the protective film 3.

次に、大判基板10Aを1次分割溝に沿って短冊状基板10Bに1次分割した後、短冊状基板10Bの分割面にNi/Crをスパッタすることにより、図3(d)と図4(d)に示すように、硫化検出導体2の長手方向両端部とそれに対応する裏電極4との間を接続する一対の端面電極5を形成する。なお、短冊状基板10Bの分割面にNi/Crをスパッタする代わりに、Ag系ペーストを塗布して加熱硬化させることにより端面電極5を形成するようにしても良い。 Next, the large-format substrate 10A is first divided into strip-shaped substrates 10B along the primary dividing groove, and then Ni / Cr is sputtered on the divided surfaces of the strip-shaped substrate 10B to show FIGS. 3 (d) and 4 (d). As shown in (d), a pair of end face electrodes 5 are formed to connect both ends of the sulfurization detection conductor 2 in the longitudinal direction and the corresponding back electrodes 4. Instead of sputtering Ni / Cr on the divided surface of the strip-shaped substrate 10B, the end face electrode 5 may be formed by applying an Ag-based paste and heat-curing it.

次に、短冊状基板10Bに対して電解メッキを施してNiメッキ層を形成することにより、図3(e)と図4(e)に示すように、内部電極7と端面電極5および裏電極4の表面とを覆う一対の耐熱バリヤー層6を形成する。 Next, by electroplating the strip-shaped substrate 10B to form a Ni plating layer, as shown in FIGS. 3 (e) and 4 (e), the internal electrode 7, the end face electrode 5, and the back electrode are formed. A pair of heat-resistant barrier layers 6 covering the surface of 4 are formed.

次に、保護膜3を覆うようにSnスパッタ等を行う下処理をした後、短冊状基板10Bを2次分割溝に沿って複数のチップ状基板10Cに2次分割し、これらチップ状基板10Cに対して電解メッキを施してSnメッキ層を形成することにより、図3(f)と図4(f)に示すように、耐熱バリヤー層6の表面全体と保護膜3の表面を連続的に覆う外部電極8を形成する。これにより、図1と図2(b)に示す硫化検出センサ10が完成する。 Next, after pretreatment such as Sn sputtering is performed so as to cover the protective film 3, the strip-shaped substrate 10B is secondarily divided into a plurality of chip-shaped substrates 10C along the secondary dividing groove, and these chip-shaped substrates 10C are secondaryly divided. As shown in FIGS. 3 (f) and 4 (f), the entire surface of the heat-resistant barrier layer 6 and the surface of the protective film 3 are continuously formed by electroplating the surface of the heat-resistant barrier layer 6 to form a Sn-plated layer. The external electrode 8 to be covered is formed. As a result, the sulfurization detection sensor 10 shown in FIGS. 1 and 2 (b) is completed.

このように構成された硫化検出センサ10は、他の電子部品と共に回路基板に実装された後、該回路基板を硫化ガスを含む雰囲気に曝すことで使用されるが、回路基板に搭載されるまでの非使用中(保管時や搬送時等)において、硫化検出導体2は硫化ガス非透過性の外部電極8とによって覆われている。このため、硫化検出センサ10が回路基板に搭載されるまでの非使用中に硫化ガスに曝されたとしても、硫化検出導体2が硫化されてしまうことはなく、その状態を回路基板に実装するまで維持することができる。 The sulfurization detection sensor 10 configured in this way is used by exposing the circuit board to an atmosphere containing sulfide gas after being mounted on the circuit board together with other electronic components, until it is mounted on the circuit board. During non-use (during storage, transportation, etc.), the sulfide detection conductor 2 is covered with an external electrode 8 that is impermeable to sulfide gas. Therefore, even if the sulfurization detection sensor 10 is exposed to sulfurized gas during non-use until it is mounted on the circuit board, the sulfurization detection conductor 2 is not sulphurized, and the state is mounted on the circuit board. Can be maintained up to.

図5は硫化検出センサ10を回路基板11に実装する手順を示す断面図である。まず、図5(a)に示すように、回路基板11の表面に設けられた配線パターン12に予めクリーム半田13aを塗布し、この配線パターン12上に絶縁基板1の表面(主面)を上向きにした姿勢で硫化検出センサ10を搭載した後、回路基板11の配線パターン12と硫化検出センサ10の外部電極8との間を半田13で固着する。半田13はスズを主成分とする鉛フリーはんだ(例えばSn96.5%−Ag3%−Cu0.5%)であり、配線パターン12上に塗布したクリーム半田13aをリフロー炉の熱で溶融した後、これを冷却・固化することにより配線パターン12と外部電極8間が半田13で接合される。 FIG. 5 is a cross-sectional view showing a procedure for mounting the sulfurization detection sensor 10 on the circuit board 11. First, as shown in FIG. 5A, cream solder 13a is applied in advance to the wiring pattern 12 provided on the surface of the circuit board 11, and the surface (main surface) of the insulating substrate 1 faces upward on the wiring pattern 12. After mounting the sulfide detection sensor 10 in this position, the wiring pattern 12 of the circuit board 11 and the external electrode 8 of the sulfide detection sensor 10 are fixed with solder 13. The solder 13 is a lead-free solder containing tin as a main component (for example, Sn96.5% -Ag3% -Cu0.5%), and after melting the cream solder 13a applied on the wiring pattern 12 with the heat of the reflow furnace, By cooling and solidifying this, the wiring pattern 12 and the external electrode 8 are joined by the solder 13.

かかる半田接合時に、保護膜3と耐熱バリヤー層6を覆う外部電極8が半田材料(Sn)からなるため、図5(b)に示すように、保護膜3を覆っていた外部電極8が半田喰われにより耐熱バリヤー層6を覆う外部電極8側に吸収されて消失し、その結果、硫化検出導体2を覆う保護膜3が外部に露出する。なお、Niメッキ層からなる耐熱バリヤー層6に半田喰われは起こらず、耐熱バリヤー層6の上面から端面にかけて半田フィレットが形成される。これにより、硫化検出センサ10が回路基板11に搭載されるまでの保管時や搬送時等の非使用中に硫化ガスに曝されたとしても、硫化ガスの遮断機能を有する外部電極8によって硫化検出導体2の硫化を阻止することができ、硫化検出センサ10を回路基板11に実装後の使用状態では、保護膜3を透して硫化する硫化検出導体2によって硫化の度合いを正確に検出することができる。 At the time of such solder bonding, the external electrode 8 covering the protective film 3 and the heat-resistant barrier layer 6 is made of a solder material (Sn). Therefore, as shown in FIG. 5 (b), the external electrode 8 covering the protective film 3 is soldered. Due to being eaten, it is absorbed by the external electrode 8 side that covers the heat-resistant barrier layer 6 and disappears, and as a result, the protective film 3 that covers the sulfide detection conductor 2 is exposed to the outside. The heat-resistant barrier layer 6 made of the Ni-plated layer is not solder-eaten, and a solder fillet is formed from the upper surface to the end surface of the heat-resistant barrier layer 6. As a result, even if the sulfurization detection sensor 10 is exposed to sulfurization gas during non-use such as storage or transportation until it is mounted on the circuit board 11, sulfurization detection is performed by the external electrode 8 having a sulfurization gas blocking function. The sulfurization of the conductor 2 can be prevented, and in the used state after the sulfurization detection sensor 10 is mounted on the circuit board 11, the degree of sulfurization is accurately detected by the sulfurization detection conductor 2 that sulphurizes through the protective film 3. Can be done.

以上説明したように、本実施形態例に係る硫化検出センサ10では、硫化ガス透過性の保護膜3が半田材料からなる外部電極8によって覆われているため、回路基板11に搭載されるまでの保管時や搬送時等の非使用中に硫化ガスに曝されたとしても、硫化ガスの遮断機能を有する外部電極8によって硫化検出導体2の硫化が阻止される。そして、硫化検出センサ10を回路基板11に搭載した後、外部電極8を回路基板11の配線パターン12に半田接合すると、Niメッキ層からなる耐熱バリヤー層6を覆っていた外部電極8は絶縁基板1の両端部に残るが、保護膜3を覆っていた外部電極8が半田喰われにより消失し、硫化検出導体2を覆う保護膜3が外部に露出するため、回路基板11に実装後の使用状態では、保護膜3を透して硫化する硫化検出導体2によって硫化の度合いを正確に検出することができる As described above, in the sulfurization detection sensor 10 according to the present embodiment, since the sulfurization gas permeable protective film 3 is covered with the external electrode 8 made of a solder material, it is mounted on the circuit board 11. Even if it is exposed to sulfurized gas during non-use such as during storage or transportation, the sulfurization of the sulfurization detection conductor 2 is prevented by the external electrode 8 having a function of blocking the sulfurized gas. Then, after mounting the sulfurization detection sensor 10 on the circuit board 11, when the external electrode 8 is solder-bonded to the wiring pattern 12 of the circuit board 11, the external electrode 8 covering the heat-resistant barrier layer 6 made of the Ni plating layer is an insulating substrate. Although it remains at both ends of 1, the external electrode 8 covering the protective film 3 disappears due to solder eating, and the protective film 3 covering the sulfurization detection conductor 2 is exposed to the outside. Therefore, it is used after mounting on the circuit board 11. In the state, the degree of sulfide can be accurately detected by the sulfide detection conductor 2 that sulfides through the protective film 3.

10 硫化検出センサ
1 絶縁基板
2 硫化検出導体
3 保護膜
4 裏電極
5 端面電極
6 耐熱バリヤー層
7 内部電極
8 外部電極
10A 大判基板
10B 短冊状基板
10C チップ状基板
11 回路基板
12 配線パターン
13 半田
10 Sulfurization detection sensor 1 Insulation substrate 2 Sulfurization detection conductor 3 Protective film 4 Back electrode 5 End face electrode 6 Heat-resistant barrier layer 7 Internal electrode 8 External electrode 10A Large format substrate 10B Strip-shaped substrate 10C Chip-shaped substrate 11 Circuit board 12 Wiring pattern 13 Solder

Claims (3)

直方体形状の絶縁基板と、この絶縁基板の主面上の両端部に設けられた一対の内部電極と、これら一対の内部電極間に設けられた硫化検出導体と、この硫化検出導体を覆うように設けられた硫化ガス透過性の保護膜と、この保護膜の両端部に前記内部電極を覆うように設けられたニッケルを主成分とする一対の耐熱バリヤー電極と、これら一対の耐熱バリヤー電極を覆う半田材料からなる外部電極とを備え、
一対の前記耐熱バリヤー電極を覆う前記外部電極は、前記保護膜を覆う位置まで連続して設けられていることを特徴とする硫化検出センサ。
A rectangular-shaped insulating substrate, a pair of internal electrodes provided at both ends on the main surface of the insulating substrate, a sulfide detection conductor provided between the pair of internal electrodes, and a sulfide detection conductor so as to cover the sulfide detection conductor. It covers the provided protective film for sulfide gas permeability, a pair of nickel-based heat-resistant barrier electrodes provided on both ends of the protective film so as to cover the internal electrodes, and the pair of heat-resistant barrier electrodes. Equipped with an external electrode made of solder material,
A sulfurization detection sensor characterized in that the external electrodes covering the pair of heat-resistant barrier electrodes are continuously provided up to a position covering the protective film.
絶縁基板の主面に銀を主成分とする硫化検出体と該硫化検出体の両端部に連続する一対の内部電極とを形成する工程と、
前記硫化検出体の表面に硫化ガス透過性の保護膜を形成する工程と、
前記内部電極を覆うようにニッケルを主成分とする一対の耐熱バリヤー電極を形成する工程と、
一対の前記耐熱バリヤー電極と前記保護膜を連続的に覆う半田材料からなる外部電極を形成する工程と、
を含むことを特徴とする硫化検出センサの製造方法。
A step of forming a sulfur-containing detector containing silver as a main component on the main surface of the insulating substrate and a pair of continuous internal electrodes on both ends of the sulfur detector.
A step of forming a sulfide gas permeable protective film on the surface of the sulfide detector, and
A step of forming a pair of heat-resistant barrier electrodes containing nickel as a main component so as to cover the internal electrodes, and
A step of forming an external electrode made of a pair of heat-resistant barrier electrodes and a solder material that continuously covers the protective film, and
A method for manufacturing a sulfurization detection sensor, which comprises.
請求項1に記載の硫化検出センサを回路基板に搭載し、前記外部電極と前記回路基板の配線パターンとの間を半田接合するときに、前記保護膜を覆っている前記外部電極が、溶融半田に溶け出して前記耐熱バリヤー電極を覆う前記外部電極側に吸収されて消失することにより、前記保護膜を外部に露出させるようにしたことを特徴とする硫化検出センサの実装方法。 When the sulfurization detection sensor according to claim 1 is mounted on a circuit board and solder-bonded between the external electrode and the wiring pattern of the circuit board, the external electrode covering the protective film is molten solder. A method for mounting a sulfurization detection sensor, characterized in that the protective film is exposed to the outside by being absorbed by the external electrode side that covers the heat-resistant barrier electrode and disappearing.
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