JP7197425B2 - Sulfurization detection resistor - Google Patents

Sulfurization detection resistor Download PDF

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JP7197425B2
JP7197425B2 JP2019076151A JP2019076151A JP7197425B2 JP 7197425 B2 JP7197425 B2 JP 7197425B2 JP 2019076151 A JP2019076151 A JP 2019076151A JP 2019076151 A JP2019076151 A JP 2019076151A JP 7197425 B2 JP7197425 B2 JP 7197425B2
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sulfurization
detection
resistor
sulfuration
insulating substrate
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JP2020173200A (en
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健太郎 松本
太郎 木村
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Koa Corp
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N17/00Investigating resistance of materials to the weather, to corrosion, or to light
    • G01N17/04Corrosion probes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/02Housing; Enclosing; Embedding; Filling the housing or enclosure
    • H01C1/034Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being formed as coating or mould without outer sheath
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/14Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/142Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C13/00Resistors not provided for elsewhere
    • H01C13/02Structural combinations of resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material

Description

本発明は、腐食環境の累積的な硫化量を検出するための硫化検出抵抗器に関する。 The present invention relates to a sulfidation sensing resistor for sensing the cumulative amount of sulfidation in a corrosive environment.

一般的にチップ抵抗器等の電子部品の内部電極としては、比抵抗の低いAg(銀)系の電極材料が使用されているが、銀は硫化ガスに曝されると硫化銀となり、硫化銀は絶縁物であることから、電子部品が断線してしまうという不具合が発生してしまう。そこで近年では、AgにPd(パラジウム)やAu(金)を添加して硫化しにくい電極を形成したり、電極を硫化ガスが到達しにくい構造にする等の硫化対策が講じられている。 Ag (silver)-based electrode materials with low specific resistance are generally used for the internal electrodes of electronic components such as chip resistors. Since is an insulator, there is a problem that the electronic component is disconnected. Therefore, in recent years, countermeasures against sulfurization have been taken, such as adding Pd (palladium) or Au (gold) to Ag to form electrodes that are difficult to sulfurize, or making electrodes difficult to reach with sulfurizing gas.

しかし、このような硫化対策を電子部品に講じたとしても、当該電子部品が硫化ガス中に長期間曝された場合や高濃度の硫化ガスに曝された場合は、断線を完全に防ぐことが難しくなるため、未然に断線を検知して予期せぬタイミングでの故障発生を防止することが必要となる。 However, even if such sulfuration countermeasures are taken for electronic components, disconnection cannot be completely prevented if the electronic component is exposed to sulfuric gas for a long period of time or is exposed to high-concentration sulfuric gas. Therefore, it is necessary to detect disconnection in advance to prevent failures at unexpected timing.

そこで従来より、特許文献1に記載されているように、電子部品の累積的な硫化の度合いを検出して、電子部品が硫化断線する等して故障する前に危険性を検出可能とした硫化検出センサが提案されている。 Therefore, conventionally, as described in Patent Document 1, the degree of cumulative sulfuration of electronic parts is detected, and the risk of electronic parts breaking down due to sulfuration disconnection etc. can be detected. A detection sensor has been proposed.

特許文献1に記載された硫化検出センサは、絶縁基板上にAgを主体とした硫化検出体を形成し、この硫化検出体を覆うように透明で硫化ガス透過性のある保護膜を形成すると共に、絶縁基板の両側端部に硫化検出体に接続する端面電極を形成した構成となっている。このように構成された硫化検出センサを他の電子部品と共に回路基板上に実装した後、該回路基板を硫化ガスを含む雰囲気で使用すると、時間経過に伴って他の電子部品が硫化されると共に、硫化ガスが硫化検出センサの保護膜を透過して硫化検出体に接するため、硫化ガスの濃度と経過時間に応じて硫化検出体を構成する銀の体積が減少していく。したがって、硫化検出体の抵抗値の変化や断線を検出することにより、硫化の度合いを検出することができる。 The sulfurization detection sensor described in Patent Document 1 forms a sulfuration detection body mainly composed of Ag on an insulating substrate, and forms a transparent protective film permeable to sulfuric gas so as to cover the sulfurization detection body. , end surface electrodes connected to the sulfurization detector are formed on both side ends of the insulating substrate. After mounting the sulfuration detection sensor configured in this way on a circuit board together with other electronic components, when the circuit board is used in an atmosphere containing a sulfurizing gas, the other electronic components are sulfurized with the passage of time. Since the sulfuric gas permeates the protective film of the sulfurization detection sensor and comes into contact with the sulfurization detection body, the volume of silver constituting the sulfurization detection body decreases according to the concentration of the sulfurization gas and the elapsed time. Therefore, the degree of sulfurization can be detected by detecting a change in the resistance value or disconnection of the sulfurization detector.

また、特許文献1には、硫化検出体を硫化ガス透過性の保護膜と硫化ガス非透過性の保護膜とで覆い、これらを電極間方向と直交する方向に並設させた構成の硫化検出センサが開示されている。このように構成された硫化検出センサでは、硫化ガス透過性保護膜で覆われた領域の硫化検出体が硫化によって断線されたとしても、硫化ガス非透過性保護膜で覆われた領域の硫化検出体は硫化せず、その後に、硫化ガス非透過性保護膜で覆われた硫化検出体が両保護膜の境界から横方向(幅方向)に侵入する硫化ガスによって徐々に硫化していく。これにより、硫化ガス透過性保護膜で覆われた領域が硫化により断線した場合でも、導通状態が確保されている状態では徐々に抵抗値が上昇していくため、その抵抗値を測定することによって硫化の度合いを検出することができ、特に、横方向の硫化の進行は遅いので、長期間にわたる硫化の検出に好適な硫化検出センサとなっている。 Further, in Patent Document 1, a sulfurization detection device is disclosed in which a sulfurization detection body is covered with a protective film permeable to sulfuric acid gas and a protective film impermeable to sulfuric gas, and these are arranged side by side in a direction orthogonal to the inter-electrode direction. A sensor is disclosed. In the sulfurization detection sensor configured in this way, even if the sulfuration detection body in the area covered with the sulfuric gas permeable protective film is disconnected due to sulfurization, the sulfurization detection sensor detects sulfuration in the area covered with the sulfuric gas impermeable protective film. The body is not sulfurized, and then the sulfurized detection body covered with the protective film impermeable to sulfuric gas is gradually sulfurized by the sulfuric gas entering in the lateral direction (width direction) from the boundary between the two protective films. As a result, even if the area covered with the sulfide gas permeable protective film is disconnected due to sulfurization, the resistance value will gradually increase while the continuity is maintained. Since the degree of sulfurization can be detected, and the progress of sulfurization in the lateral direction is particularly slow, it is a sulfurization detection sensor suitable for detecting sulfurization over a long period of time.

特開2009-250611号公報JP 2009-250611 A

しかし、硫化検出体が比抵抗の低いAgを主体とした導電体であるため、累積的な硫化量に伴う硫化検出体の抵抗値変化は極めて微量であり、しかもAgは温度特性(TCR)が非常に悪く、温度による抵抗値変化が大きいため、硫化検出体の抵抗値の変化に基づいて硫化の度合いを正確に検出することは困難となる。また、硫化検出体を硫化ガス透過性と硫化ガス非透過性の2種類の保護膜で幅方向に覆うように構成した硫化検出センサの場合、印刷ズレ等に起因して両保護膜の形成位置がばらつき易くなるため、硫化ガス透過性保護膜で覆われた硫化検出体が断線するタイミングや、硫化ガス非透過性保護膜で覆われた硫化検出体の抵抗値変化率が製品毎にばらついてしまい、検出精度の個体差が大きいという問題もある。 However, since the sulfuration detection object is a conductor mainly composed of Ag with low specific resistance, the resistance value change of the sulfurization detection object due to the cumulative amount of sulfurization is extremely small, and Ag has a temperature characteristic (TCR). This is very bad, and the change in resistance value due to temperature is large, so it is difficult to accurately detect the degree of sulfurization based on the change in the resistance value of the sulfurization detector. Also, in the case of a sulfurization detection sensor configured to cover the sulfurization detection body with two types of protective films, one permeable to sulfuric acid and the other impermeable to sulfuric acid, in the width direction, the formation position of both protective films may be affected by printing misalignment or the like. Therefore, the disconnection timing of the sulfurized detector covered with the sulfuric gas permeable protective film and the resistance value change rate of the sulfuricized detector covered with the sulfuric gas impermeable protective film vary from product to product. There is also the problem of large individual differences in detection accuracy.

本発明は、このような従来技術の実情に鑑みてなされたもので、その目的は、硫化の度合いを正確に検出することができる硫化検出抵抗器を提供することにある。 SUMMARY OF THE INVENTION It is an object of the present invention to provide a sulfurization detection resistor capable of accurately detecting the degree of sulfurization.

上記の目的を達成するために、本発明の硫化検出抵抗器は、直方体形状の絶縁基板と、前記絶縁基板の表面に設けられた硫化可能な硫化検出導体と、前記絶縁基板の裏面における長手方向両端部に設けられた一対の裏電極と、一対の前記裏電極間を接続する抵抗体と、前記抵抗体を覆う保護膜と、前記硫化検出導体の長手方向両端部と前記裏電極を導通する一対の端面電極と、前記端面電極と前記裏電極を覆う一対の外部電極と、を備え、前記硫化検出導体の長手方向両端部が一対の前記外部電極によって覆われており、一対の前記外部電極で覆われていない領域の前記硫化検出導体が硫化ガスと接触可能な硫化検出部になっていることを特徴としている。 To achieve the above object, the sulfurization detection resistor of the present invention comprises: a rectangular parallelepiped insulating substrate; a sulfurizable sulfurization detection conductor provided on the surface of the insulating substrate; A pair of back electrodes provided at both ends, a resistor connecting between the pair of back electrodes, a protective film covering the resistor, both longitudinal ends of the sulfide detection conductor and the back electrodes electrically connected. A pair of end face electrodes and a pair of external electrodes covering the end face electrodes and the back electrode are provided, and both ends in the longitudinal direction of the sulfurization detection conductor are covered with the pair of the external electrodes. The sulfurization detection conductor in the region not covered with is a sulfurization detection portion that can come into contact with the sulfurization gas.

このように構成された硫化検出抵抗器では、硫化検出部を有する硫化検出導体と保護膜で覆われた抵抗体とが絶縁基板の表裏両面に振り分けて設けられているため、絶縁基板の表面側に設けられた硫化検出導体の硫化検出部が断線したことを、絶縁基板の裏面側に設けられた抵抗体を流れる電流の抵抗値によって正確に検出することができ、しかも、硫化検出導体が断線した状態になっても外部電極間の導通を確保することができる。 In the sulfurization detection resistor configured in this way, the sulfuration detection conductor having the sulfurization detection part and the resistor covered with the protective film are provided separately on both the front and back sides of the insulating substrate. The disconnection of the sulfuration detection part of the sulfuration detection conductor provided in the insulating substrate can be accurately detected by the resistance value of the current flowing through the resistor provided on the back side of the insulating substrate, and the disconnection of the sulfurization detection conductor Even in such a state, the continuity between the external electrodes can be ensured.

上記構成の硫化検出抵抗器において、絶縁基板の裏面から保護膜までの高さ寸法が、絶縁基板の裏面から裏電極を覆う外部電極までの高さ寸法に比べて小さくなるように設定されていると、硫化検出導体が形成された絶縁基板の表面側を上向きにした姿勢で回路基板に実装した際に、絶縁基板の裏面側に形成された保護膜と回路基板との間に隙間が確保されるため、硫化検出抵抗器を安定した姿勢で回路基板上に実装することができる。この場合において、裏電極が、絶縁基板の裏面上に形成された第1裏電極と、該第1裏電極上に積層された第2裏電極とを含んでいると、高さ寸法の厚い裏電極を容易に形成することができて好ましい。 In the sulfuration detection resistor having the above configuration, the height dimension from the back surface of the insulating substrate to the protective film is set to be smaller than the height dimension from the back surface of the insulating substrate to the external electrode covering the back electrode. Then, when the insulating substrate on which the sulfuration detection conductor is formed is mounted on the circuit board with the surface side facing upward, a gap is secured between the protective film formed on the back side of the insulating substrate and the circuit board. Therefore, the sulfuration detection resistor can be mounted on the circuit board in a stable posture. In this case, when the back electrode includes a first back electrode formed on the back surface of the insulating substrate and a second back electrode laminated on the first back electrode, a thick back electrode having a height dimension can be obtained. It is preferable because the electrodes can be easily formed.

また、上記構成の硫化検出抵抗器において、硫化検出導体の硫化検出部は一対の外部電極間から外部に直接露出しても良いが、硫化検出部が硫化ガス透過性保護膜によって覆われていると、硫化検出部が外部からの接触の影響を受け難くなり、硫化検出部を除く硫化検出導体の両端部に外部電極を容易にめっき形成することができる。 In addition, in the sulfurization detection resistor having the above configuration, the sulfuration detection portion of the sulfurization detection conductor may be directly exposed to the outside from between the pair of external electrodes, but the sulfurization detection portion is covered with a sulfurization gas permeable protective film. As a result, the sulfuration detecting portion is less likely to be affected by contact from the outside, and the external electrodes can be easily plated on both ends of the sulfurization detecting conductor excluding the sulfurization detecting portion.

本発明によれば、硫化の度合いを正確に検出することが可能な硫化検出抵抗器を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the sulfuration detection resistor which can detect the degree of sulfuration correctly can be provided.

本発明の実施形態例に係る硫化検出抵抗器の平面図である。1 is a plan view of a sulfidation detection resistor according to an example embodiment of the present invention; FIG. 該硫化検出抵抗器の裏面図である。FIG. 4 is a back view of the sulfurization detection resistor; 図1のIII-III線に沿う断面図である。FIG. 2 is a cross-sectional view taken along line III-III of FIG. 1; 該硫化検出抵抗器の製造工程を示す平面図である。It is a top view which shows the manufacturing process of this sulfuration detection resistor. 該硫化検出抵抗器の製造工程を示す裏面図である。It is a back view which shows the manufacturing process of this sulfuration detection resistor. 該硫化検出抵抗器の製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of this sulfuration detection resistor. 該硫化検出抵抗器を回路基板に実装した状態を示す説明図である。FIG. 4 is an explanatory diagram showing a state in which the sulfuration detection resistor is mounted on a circuit board;

以下、発明の実施の形態について図面を参照しながら説明すると、図1は本発明の実施形態例に係る硫化検出抵抗器の平面図、図2は該硫化検出抵抗器の裏面図、図3は図1のIII-III線に沿う断面図である。 1 is a plan view of a sulfurization detection resistor according to an embodiment of the present invention, FIG. 2 is a rear view of the sulfurization detection resistor, and FIG. FIG. 2 is a cross-sectional view taken along line III-III of FIG. 1;

図1~図3に示すように、本実施形態例に係る硫化検出抵抗器100は、直方体形状の絶縁基板1と、絶縁基板1の表面に設けられた硫化検出導体2と、この硫化検出導体2の中央部に設けられ第1保護膜3と、絶縁基板1の裏面の長手方向両端部に設けられた一対の裏電極4と、これら裏電極4間を接続する抵抗体5と、この抵抗体5を覆う第2保護膜6と、絶縁基板1の長手方向両端面に設けられた一対の端面電極7と、硫化検出導体2の両端部と端面電極7および裏電極4を覆う一対の外部電極8と、によって主として構成されている。 As shown in FIGS. 1 to 3, the sulfurization detection resistor 100 according to this embodiment includes a rectangular parallelepiped insulating substrate 1, a sulfurization detection conductor 2 provided on the surface of the insulation substrate 1, and the sulfurization detection conductor 2, a pair of back electrodes 4 provided at both ends in the longitudinal direction of the back surface of the insulating substrate 1, a resistor 5 connecting between the back electrodes 4, and this resistor. a second protective film 6 covering the body 5; a pair of end face electrodes 7 provided on both longitudinal end faces of the insulating substrate 1; and the electrode 8 .

絶縁基板1は、後述する大判基板を縦横の分割溝に沿って分割して多数個取りされたものであり、大判基板の主成分はアルミナを主成分とするセラミックス基板である。 The insulating substrate 1 is obtained by dividing a large substrate, which will be described later, along vertical and horizontal dividing grooves to obtain a large number of substrates.

硫化検出導体2は銀を主成分とするAgペーストをスクリーン印刷して乾燥・焼成したものであり、この硫化検出導体2は絶縁基板1の表面に形成されている。硫化検出導体2の長手方向両端部は硫化ガスの透過を遮断する外部電極8によって覆われているが、硫化検出導体2の中央部は硫化ガスと接触可能な硫化検出部2aとなっている。 The sulfuration detection conductor 2 is formed on the surface of the insulating substrate 1 by screen-printing an Ag paste containing silver as a main component, followed by drying and firing. Both ends of the sulfurization detection conductor 2 in the longitudinal direction are covered with external electrodes 8 that block permeation of sulfuration gas, while the central portion of the sulfurization detection conductor 2 serves as a sulfurization detection portion 2a that can come into contact with the sulfurization gas.

第1保護膜3は、硫化ガス透過性の絶縁材料からなり、シリコン樹脂やフッ素樹脂等の樹脂ペースト等をスクリーン印刷して加熱硬化させたものである。第1保護膜3は硫化検出導体2の硫化検出部2aを覆うように形成されており、この第1保護膜3を透過して硫化ガスが硫化検出部2aに接触するようになっている。後述するように、硫化検出抵抗器100が回路基板に実装されて硫化ガスの検出に使用される際に、第1保護膜3によって硫化検出部2aが覆われているため、硫化検出部2aは外部からの接触の影響を受け難くなっている。 The first protective film 3 is made of an insulating material permeable to sulfide gas, and is obtained by screen-printing a resin paste such as silicon resin or fluororesin, followed by heat curing. The first protective film 3 is formed so as to cover the sulfurization detection portion 2a of the sulfurization detection conductor 2, and the sulfuration gas passes through the first protective film 3 to come into contact with the sulfurization detection portion 2a. As will be described later, when the sulfuration detection resistor 100 is mounted on a circuit board and used to detect sulfuration gas, the sulfuration detection part 2a is covered with the first protective film 3, so that the sulfuration detection part 2a is It is less susceptible to external contact.

裏電極4は、絶縁基板1の裏面上に形成された第1裏電極4aと、この第1裏電極4a上に積層された第2裏電極4bとの2層構造からなり、トータル高さの厚い裏電極4が構成されている。第1裏電極4aは銀を主成分とするAg系ペーストをスクリーン印刷して乾燥・焼成させた焼成銀からなり、第2裏電極4bは銀を主成分とするAgペーストをスクリーン印刷して加熱硬化させた樹脂銀からなる。 The back electrode 4 has a two-layer structure of a first back electrode 4a formed on the back surface of the insulating substrate 1 and a second back electrode 4b laminated on the first back electrode 4a. A thick back electrode 4 is constructed. The first back electrode 4a is made of baked silver obtained by screen-printing an Ag-based paste containing silver as a main component, followed by drying and baking. Consists of hardened resinous silver.

抵抗体5は酸化ルテニウム等の抵抗体ペーストをスクリーン印刷して乾燥・焼成させたものであり、抵抗体5の両端部は第1裏電極4aに重なっている。 The resistor 5 is formed by screen-printing a resistor paste such as ruthenium oxide, followed by drying and firing, and both ends of the resistor 5 overlap the first back electrodes 4a.

第2保護膜6はアンダーコート層6aとオーバーコート層6bの2層構造からなり、この第2保護膜6の両端部に第2裏電極4bが重なっている。アンダーコート層6aはガラスペーストをスクリーン印刷して乾燥・焼成させたものであり、オーバーコート層6bはエポキシ系樹脂ペーストをスクリーン印刷して加熱硬化させたものである。これらアンダーコート層6aとオーバーコート層6bは硫化ガスの透過を遮断する絶縁材料からなり、このような第2保護膜6によって抵抗体5の全体が覆われている。 The second protective film 6 has a two-layer structure of an undercoat layer 6a and an overcoat layer 6b. The undercoat layer 6a is formed by screen-printing a glass paste, dried and baked, and the overcoat layer 6b is formed by screen-printing an epoxy resin paste and heat-curing it. The undercoat layer 6a and the overcoat layer 6b are made of an insulating material that blocks permeation of sulfide gas.

端面電極7は、絶縁基板1の端面にNi/Crをスパッタしたり、Ag系ペーストを塗布して加熱硬化させたものであり、端面電極7は硫化検出導体2の長手方向両端部とそれに対応する裏電極4との間を導通するように形成されている。 The end face electrodes 7 are obtained by sputtering Ni/Cr on the end face of the insulating substrate 1 or applying Ag-based paste and heating and curing the end faces. It is formed so as to conduct between the back electrode 4 and the back electrode 4 .

外部電極8はバリヤー層と外部接続層の2層構造からなり、そのうちバリヤー層は電解メッキによって形成されたNiメッキ層であり、外部接続層は電解メッキによって形成されたSnメッキ層である。この外部電極8により、第1保護膜3から露出する硫化検出導体2の両端部と端面電極7および裏電極4の表面が断面コ字状に被覆されている。ここで、第2裏電極4bがオーバーコート層6bの表面高さに対して下方に突出する厚膜構造の裏電極4となっており、このような第2裏電極4bを外部電極8が覆っているため、絶縁基板1の裏面から第2裏電極4bを覆う外部電極8に至る高さ寸法に比べると、絶縁基板1の裏面からオーバーコート層6bに至る高さ寸法は小さくなっている。 The external electrode 8 has a two-layer structure of a barrier layer and an external connection layer, of which the barrier layer is a Ni-plated layer formed by electrolytic plating, and the external connection layer is a Sn-plated layer formed by electrolytic plating. Both ends of the sulfurization detection conductor 2 exposed from the first protective film 3 and the surfaces of the end face electrodes 7 and the back electrode 4 are covered with the external electrodes 8 so as to have a U-shaped cross section. Here, the second back electrode 4b is a back electrode 4 having a thick film structure protruding downward with respect to the surface height of the overcoat layer 6b, and the external electrode 8 covers the second back electrode 4b. Therefore, the height dimension from the back surface of the insulating substrate 1 to the overcoat layer 6b is smaller than the height dimension from the back surface of the insulating substrate 1 to the external electrode 8 covering the second back electrode 4b.

次に、この硫化検出抵抗器100の製造工程について、図4~図6を用いて説明する。なお、図4(a)~(h)はこの製造工程で用いられる大判基板の平面図、図5(a)~(h)は該大判基板の裏面図、図6(a)~(h)は図4(a)~(h)の長手方向中央部に沿った1チップ相当分の断面図をそれぞれ示している。 Next, the manufacturing process of this sulfuration detection resistor 100 will be described with reference to FIGS. 4 to 6. FIG. 4(a) to (h) are plan views of the large substrate used in this manufacturing process, FIGS. 5(a) to (h) are back views of the large substrate, and FIGS. 6(a) to (h). 4A to 4H respectively show cross-sectional views corresponding to one chip along the central portion in the longitudinal direction of FIGS.

まず、絶縁基板1が多数個取りされる大判基板を準備する。この大判基板には予め1次分割溝と2次分割溝が格子状に設けられており、両分割溝によって区切られたマス目の1つ1つが1個分のチップ領域となる。図4~図6には1個分のチップ領域に相当する大判基板が代表して示されているが、実際は多数個分のチップ領域に相当する大判基板に対して以下に説明する各工程が一括して行われる。 First, a large substrate from which a large number of insulating substrates 1 are obtained is prepared. This large-sized substrate is provided in advance with primary and secondary dividing grooves in a grid pattern, and each square partitioned by both dividing grooves serves as one chip area. 4 to 6 representatively show a large-sized substrate corresponding to one chip area, in actuality, each process described below is performed on a large-sized substrate corresponding to a large number of chip areas. done in batches.

すなわち、図4(a)と図5(a)および図6(a)に示すように、この大判基板10Aの裏面にAg系ペースト(Ag-Pd20%)をスクリーン印刷した後、これを乾燥・焼成して一対の第1裏電極4aを形成する。 That is, as shown in FIGS. 4(a), 5(a), and 6(a), Ag-based paste (Ag—Pd 20%) is screen-printed on the back surface of the large-sized substrate 10A, and then dried and dried. It is fired to form a pair of first back electrodes 4a.

次に、図4(b)と図5(b)および図6(b)に示すように、大判基板10Aの表面に銀を主成分とするAgペーストをスクリーン印刷して乾燥・焼成することにより、大判基板10Aの表面に長方形状の硫化検出導体2を形成する。なお、硫化検出導体2の長手方向両端部は大判基板10Aの短辺に達する位置まで延びているが、硫化検出導体2の短手方向の寸法は大判基板10Aの短辺長さに比べて若干短めに設定されている。 Next, as shown in FIGS. 4(b), 5(b) and 6(b), an Ag paste containing silver as a main component is screen-printed on the surface of the large-sized substrate 10A, dried and fired. , a rectangular sulfuration detection conductor 2 is formed on the surface of the large-sized substrate 10A. Both ends of the sulfurization detection conductor 2 in the longitudinal direction extend to the short side of the large substrate 10A, but the width of the sulfurization detection conductor 2 in the width direction is slightly larger than the length of the short side of the large substrate 10A. set short.

次に、大判基板10Aの裏面に酸化ルテニウム等の抵抗体ペーストをスクリーン印刷して乾燥・焼成することにより、図4(c)と図5(c)および図6(c)に示すように、両端部が第1裏電極4aに重なる抵抗体5を形成する。 Next, a resistive paste such as ruthenium oxide is screen-printed on the back surface of the large-sized substrate 10A, dried and fired to obtain, as shown in FIGS. 4(c), 5(c) and 6(c), A resistor 5 having both ends overlapping the first back electrode 4a is formed.

次に、抵抗体5を覆う領域にガラスペーストをスクリーン印刷した後、このガラスペーストを乾燥・焼成してアンダーコート層6aを形成し、必要に応じてアンダーコート層6aの上から抵抗体5に図示せぬトリミング溝を形成して抵抗値調整する。しかる後、アンダーコート層6aの上からエポキシ系樹脂ペーストをスクリーン印刷し、これを加熱硬化してオーバーコート層6bを形成することにより、図4(d)と図5(d)および図6(d)に示すように、抵抗体5の全体を覆う2層構造の第2保護膜6を形成する。 Next, after screen-printing a glass paste on the area covering the resistor 5, the glass paste is dried and baked to form an undercoat layer 6a. A trimming groove (not shown) is formed to adjust the resistance value. Thereafter, an epoxy-based resin paste is screen-printed on the undercoat layer 6a and heat-cured to form the overcoat layer 6b, thereby forming the overcoat layer 6b shown in FIGS. As shown in d), a second protective film 6 having a two-layer structure covering the entire resistor 5 is formed.

次に、第1裏電極4aに重なるように銀を主成分とするAg系ペーストをスクリーン印刷した後、これを加熱硬化して一対の第2裏電極4bを形成することにより、図4(e)と図5(e)および図6(e)に示すように、トータル膜厚の厚い2層構造の裏電極4を形成する。 Next, after screen-printing an Ag-based paste containing silver as a main component so as to overlap the first back electrodes 4a, this is cured by heating to form a pair of second back electrodes 4b, thereby forming a pair of second back electrodes 4b. ) and as shown in FIGS. 5(e) and 6(e), a rear electrode 4 having a two-layer structure with a large total film thickness is formed.

次に、硫化検出導体2の中央部にシリコン樹脂やフッ素樹脂等の樹脂ペースト等をスクリーン印刷し、これを加熱硬化することにより、図3(f)と図4(f)に示すように、硫化検出導体2の中央部を覆う硫化ガス透過性の第1保護膜3を形成する。 Next, a resin paste such as silicone resin or fluororesin is screen-printed on the central portion of the sulfurization detection conductor 2, and the paste is cured by heating to obtain the following as shown in FIGS. 3(f) and 4(f). A first protective film 3 permeable to sulfide gas is formed to cover the central portion of the sulfide detection conductor 2 .

次に、大判基板10Aを一次分割溝に沿って短冊状基板10Bに1次分割した後、短冊状基板10Bの分割面にNi/Crをスパッタすることにより、図4(g)と図5(g)および図6(g)に示すように、硫化検出導体2と裏電極4(第1裏電極4aと第2裏電極4b)間を接続する一対の端面電極7を形成する。なお、短冊状基板10Bの分割面にNi/Crをスパッタする代わりに、Ag系ペーストを塗布して加熱硬化させることにより端面電極7を形成するようにしても良い。 Next, after the large-sized substrate 10A is primarily divided into strip-shaped substrates 10B along the primary division grooves, Ni/Cr is sputtered on the divided surfaces of the strip-shaped substrates 10B, thereby forming the substrates shown in FIGS. As shown in g) and FIG. 6(g), a pair of end face electrodes 7 are formed to connect between the sulfuration detecting conductor 2 and the back electrode 4 (the first back electrode 4a and the second back electrode 4b). Instead of sputtering Ni/Cr on the divided surfaces of the strip-shaped substrate 10B, the end surface electrodes 7 may be formed by applying Ag-based paste and curing it by heating.

次に、短冊状基板10Bを二次分割溝に沿って複数のチップ状基板10Cに2次分割し、これらチップ状基板10Cに対して電解メッキを施してNiメッキ層とSnメッキ層を順次形成することにより、図4(h)と図5(h)および図6(h)に示すように、第1保護膜3から露出する硫化検出導体2の両端部と端面電極7および裏電極4の表面を覆う一対の外部電極8を形成する。これにより、硫化検出導体2の中央部を除く両端部が硫化ガス非透過性の外部電極8によって被覆され、第1保護膜3で覆われた領域を除く硫化検出導体2の中央部が硫化ガスと接触可能な硫化検出部2aとなり、図1~図3に示す硫化検出抵抗器100が完成する。 Next, the strip-shaped substrate 10B is secondarily divided into a plurality of chip-shaped substrates 10C along the secondary division grooves, and electrolytic plating is applied to these chip-shaped substrates 10C to sequentially form Ni plating layers and Sn plating layers. As a result, as shown in FIGS. 4(h), 5(h) and 6(h), both ends of the sulfurization detecting conductor 2 exposed from the first protective film 3, the end surface electrode 7 and the back electrode 4 are separated. A pair of external electrodes 8 are formed to cover the surface. As a result, both ends of the sulfidation detection conductor 2 excluding the central portion are covered with the external electrode 8 impermeable to sulfide gas, and the central portion of the sulfidation detection conductor 2 excluding the region covered with the first protective film 3 is exposed to the sulfide gas. , and the sulfurization detection resistor 100 shown in FIGS. 1 to 3 is completed.

図7に示すように、このように構成された硫化検出抵抗器100は、図示せぬ他の電子部品と共に回路基板11上に実装された後、該回路基板11を硫化ガスを含む雰囲気に曝すことで使用される。その際、硫化検出抵抗器100は、硫化検出導体2が形成された絶縁基板1の表面側を上向きにした姿勢(すなわち、抵抗体5を下向きにした姿勢)で回路基板11上に搭載されるが、第2保護膜6のオーバーコート層6bが裏電極4を覆う一対の外部電極8の間に段落ち状に配置されているため、第2保護膜6と回路基板11との間に段差相当分の隙間が確保される。これにより、硫化検出抵抗器100を安定した姿勢で回路基板11上に搭載することができ、回路基板11の表面に設けられた配線パターン12と硫化検出抵抗器100の外部電極8とを容易に且つ確実に半田13で接合することができる。 As shown in FIG. 7, the sulfuration detection resistor 100 configured in this manner is mounted on a circuit board 11 together with other electronic components (not shown), and then the circuit board 11 is exposed to an atmosphere containing sulfuration gas. used by At that time, the sulfuration detection resistor 100 is mounted on the circuit board 11 with the surface side of the insulating substrate 1 on which the sulfurization detection conductor 2 is formed facing upward (that is, with the resistor 5 facing downward). However, since the overcoat layer 6b of the second protective film 6 is arranged stepwise between the pair of external electrodes 8 covering the back electrode 4, there is a step between the second protective film 6 and the circuit board 11. Adequate clearance is ensured. As a result, the sulfuration detection resistor 100 can be mounted on the circuit board 11 in a stable posture, and the wiring pattern 12 provided on the surface of the circuit board 11 and the external electrode 8 of the sulfurization detection resistor 100 can be easily connected. In addition, the solder 13 can be reliably joined.

このようにして回路基板11に実装された硫化検出抵抗器100が硫化ガスに曝されると、硫化ガスが第1保護膜3を透過して硫化検出導体2の硫化検出部2aに接触するため、経年的に累積硫化量が増えていくことにより、硫化検出部2aが第1保護膜3の内部で断線し、この時点で抵抗体5を流れる電流の抵抗値によって硫化の度合いを正確に検出することができる。しかも、絶縁基板1の表面側に設けられた硫化検出導体2が断線した状態になっても、絶縁基板1の裏面側に設けられた抵抗体5は硫化されないため、一対の外部電極8間の導通を抵抗体5によって確保することができる。 When the sulfuration detection resistor 100 mounted on the circuit board 11 is exposed to sulfuration gas in this manner, the sulfuration gas permeates the first protective film 3 and contacts the sulfurization detection portion 2a of the sulfurization detection conductor 2. As the cumulative amount of sulfuration increases over time, the sulfuration detection unit 2a breaks inside the first protective film 3. At this point, the degree of sulfurization is accurately detected from the resistance value of the current flowing through the resistor 5. can do. Moreover, even if the sulfuration detection conductor 2 provided on the front surface side of the insulating substrate 1 is disconnected, the resistor 5 provided on the back surface side of the insulating substrate 1 is not sulfurized. Conduction can be ensured by resistor 5 .

以上説明したように、本実施形態例に係る硫化検出抵抗器100では、硫化検出部2aを有する硫化検出導体2と第2保護膜6で覆われた抵抗体5とが絶縁基板1の表裏両面に振り分けて設けられているため、絶縁基板1の表面側に設けられた硫化検出導体2の硫化検出部2aが累積的な硫化により断線したことを、絶縁基板1の裏面側に設けられた抵抗体5を流れる電流の抵抗値により正確に検出することができ、しかも、硫化検出導体2が断線した状態になっても外部電極8間の導通を確保することができる。 As described above, in the sulfurization detection resistor 100 according to the present embodiment, the sulfuration detection conductor 2 having the sulfurization detection portion 2a and the resistor 5 covered with the second protective film 6 are formed on both front and back surfaces of the insulating substrate 1. Therefore, when the sulfurization detection part 2a of the sulfuration detection conductor 2 provided on the front side of the insulating substrate 1 is disconnected due to cumulative sulfurization, the resistor provided on the back side of the insulating substrate 1 Accurate detection can be made from the resistance value of the current flowing through the body 5, and the continuity between the external electrodes 8 can be ensured even if the sulfuration detection conductor 2 is disconnected.

また、本実施形態例に係る硫化検出抵抗器100では、絶縁基板1の裏面から第2保護膜6に至る高さ寸法が、絶縁基板1の裏面から裏電極4を覆う外部電極8に至る高さ寸法に比べて小さくなっており、裏電極4を覆う一対の外部電極8で挟まれた領域に第2保護膜6が段落ち状に配置された構成となっているため、硫化検出導体2が形成された絶縁基板1の表面側を上向きにした姿勢で回路基板11に実装した際に、絶縁基板1の裏面側に形成された第2保護膜6と回路基板11との間に両者の当接を回避する隙間が確保され、硫化検出抵抗器100を安定した姿勢で回路基板11上に実装することができる。しかも、裏電極4が、絶縁基板1の裏面上に形成された第1裏電極4aと、第1裏電極4a上に積層された第2裏電極4bとの積層構造(2層構造)からなるため、高さ寸法の厚い裏電極4を容易に形成することができる。 In addition, in the sulfuration detection resistor 100 according to the present embodiment, the height dimension from the back surface of the insulating substrate 1 to the second protective film 6 is the height from the back surface of the insulating substrate 1 to the external electrode 8 covering the back electrode 4 . Since the second protective film 6 is arranged stepwise in the region sandwiched between the pair of external electrodes 8 covering the back electrode 4, the sulfuration detection conductor 2 is mounted on the circuit board 11 with the surface side of the insulating substrate 1 formed thereon facing upward, between the second protective film 6 formed on the back surface side of the insulating substrate 1 and the circuit board 11 A gap is secured to avoid contact, and the sulfuration detection resistor 100 can be mounted on the circuit board 11 in a stable posture. Moreover, the back electrode 4 has a laminated structure (two-layer structure) of the first back electrode 4a formed on the back surface of the insulating substrate 1 and the second back electrode 4b laminated on the first back electrode 4a. Therefore, the back electrode 4 having a large height dimension can be easily formed.

また、本実施形態例に係る硫化検出抵抗器100では、硫化検出導体2の硫化検出部2aが硫化ガス透過性の第1保護膜3によって覆われているため、硫化検出部2aが外部からの接触の影響を受け難くなると共に、硫化検出部2aを除く硫化検出導体2の両端部に外部電極8を容易にめっき形成することができる。ただし、第1保護膜3を省略して硫化検出部2aが外部に露出する構成にすることも可能であり、その場合は、硫化検出部2aを溶解剥離型のレジスト膜で被覆した状態で外部電極8をめっき形成し、外部電極8のめっき形成後にレジスト膜を溶剤で剥離・除去して硫化検出部2aを露出させれば良い。 In addition, in the sulfuration detection resistor 100 according to the present embodiment, the sulfuration detection portion 2a of the sulfuration detection conductor 2 is covered with the first protective film 3 permeable to sulfuration gas, so that the sulfuration detection portion 2a is protected from external interference. The external electrodes 8 can be easily plated on both end portions of the sulfurization detection conductor 2 except for the sulfurization detection portion 2a. However, it is also possible to omit the first protective film 3 and expose the sulfurization detection unit 2a to the outside. The electrodes 8 are formed by plating, and after the external electrodes 8 are formed by plating, the resist film is stripped and removed with a solvent to expose the sulfurization detecting portion 2a.

1 絶縁基板
2 硫化検出導体
2a 硫化検出部
3 第1保護膜
4 裏電極4
4a 第1裏電極
4b 第2裏電極
5 抵抗体
6 第2保護膜
6a アンダーコート層
6b オーバーコート層
7 端面電極
8 外部電極
10A 大判基板
10B 短冊状基板
10c チップ状基板
11 回路基板
12 配線パターン
13 半田
100 硫化検出抵抗器
REFERENCE SIGNS LIST 1 insulating substrate 2 sulfurization detection conductor 2a sulfurization detection part 3 first protective film 4 back electrode 4
4a first back electrode 4b second back electrode 5 resistor 6 second protective film 6a undercoat layer 6b overcoat layer 7 edge electrode 8 external electrode 10A large substrate 10B strip substrate 10c chip substrate 11 circuit substrate 12 wiring pattern 13 Solder 100 Sulfurization detection resistor

Claims (4)

直方体形状の絶縁基板と、前記絶縁基板の表面に設けられた硫化可能な硫化検出導体と、前記絶縁基板の裏面における長手方向両端部に設けられた一対の裏電極と、一対の前記裏電極間を接続する抵抗体と、前記抵抗体を覆う保護膜と、前記硫化検出導体の長手方向両端部と前記裏電極を導通する一対の端面電極と、前記端面電極と前記裏電極を覆う一対の外部電極と、を備え、
前記硫化検出導体の長手方向両端部が一対の前記外部電極によって覆われており、一対の前記外部電極で覆われていない領域の前記硫化検出導体が硫化ガスと接触可能な硫化検出部になっていることを特徴とする硫化検出抵抗器。
A rectangular parallelepiped insulating substrate, a sulfurization detection conductor that can be sulfurized provided on the surface of the insulating substrate, a pair of back electrodes provided at both ends in the longitudinal direction of the back surface of the insulating substrate, and between the pair of back electrodes. a protective film covering the resistor; a pair of end-face electrodes electrically connecting both longitudinal ends of the sulfurization detection conductor and the back electrode; and a pair of external electrodes covering the end-face electrodes and the back electrode. an electrode;
Both ends in the longitudinal direction of the sulfurization detection conductor are covered with the pair of external electrodes, and the sulfurization detection conductor in a region not covered with the pair of external electrodes serves as a sulfurization detection portion capable of contacting the sulfurization gas. A sulfide detection resistor, characterized in that:
請求項1に記載の硫化検出抵抗器において、
前記絶縁基板の裏面から前記保護膜までの高さ寸法が、前記絶縁基板の裏面から前記裏電極を覆う前記外部電極までの高さ寸法に比べて小さくなるように設定されていることを特徴とする硫化検出抵抗器。
The sulfidation detection resistor of claim 1, wherein
A height dimension from the back surface of the insulating substrate to the protective film is set to be smaller than a height dimension from the back surface of the insulating substrate to the external electrode covering the back electrode. sulfide detection resistor.
請求項2に記載の硫化検出抵抗器において、
前記裏電極が、前記絶縁基板の裏面上に形成された第1裏電極と、該第1裏電極上に積層された第2裏電極とを含んでいることを特徴とする硫化検出抵抗器。
The sulfidation detection resistor of claim 2, wherein
A sulfuration detection resistor, wherein said back electrode includes a first back electrode formed on the back surface of said insulating substrate and a second back electrode laminated on said first back electrode.
請求項1に記載の硫化検出抵抗器において、
前記硫化検出部が硫化ガス透過性保護膜によって覆われていることを特徴とする硫化検出抵抗器。
The sulfidation detection resistor of claim 1, wherein
A sulfuration detection resistor, wherein the sulfurization detection part is covered with a sulfurization gas permeable protective film.
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JP2001143902A (en) 1999-11-16 2001-05-25 Matsushita Electric Ind Co Ltd Resistor and its manufacturing method
JP2009250611A (en) 2008-04-01 2009-10-29 Taiyosha Electric Co Ltd Sulfuration detecting sensor, sulfuration detection circuit, and manufacturing method of sulfuration detection sensor
JP2016152258A (en) 2015-02-16 2016-08-22 Koa株式会社 Chip resistor for board inner layer and component built-in circuit board
US20180174720A1 (en) 2016-12-15 2018-06-21 National Cheng Kung University Methods of Fabricating Chip Resistors Using Aluminum Terminal Electrodes

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JP2001143902A (en) 1999-11-16 2001-05-25 Matsushita Electric Ind Co Ltd Resistor and its manufacturing method
JP2009250611A (en) 2008-04-01 2009-10-29 Taiyosha Electric Co Ltd Sulfuration detecting sensor, sulfuration detection circuit, and manufacturing method of sulfuration detection sensor
JP2016152258A (en) 2015-02-16 2016-08-22 Koa株式会社 Chip resistor for board inner layer and component built-in circuit board
US20180174720A1 (en) 2016-12-15 2018-06-21 National Cheng Kung University Methods of Fabricating Chip Resistors Using Aluminum Terminal Electrodes

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