JP2020153853A - Sulfuration detection sensor and method for mounting the same - Google Patents

Sulfuration detection sensor and method for mounting the same Download PDF

Info

Publication number
JP2020153853A
JP2020153853A JP2019053352A JP2019053352A JP2020153853A JP 2020153853 A JP2020153853 A JP 2020153853A JP 2019053352 A JP2019053352 A JP 2019053352A JP 2019053352 A JP2019053352 A JP 2019053352A JP 2020153853 A JP2020153853 A JP 2020153853A
Authority
JP
Japan
Prior art keywords
sulfurization
detection sensor
sulfide
resist film
sulfurization detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019053352A
Other languages
Japanese (ja)
Inventor
松本 健太郎
Kentaro Matsumoto
健太郎 松本
太郎 木村
Taro Kimura
太郎 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koa Corp
Original Assignee
Koa Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koa Corp filed Critical Koa Corp
Priority to JP2019053352A priority Critical patent/JP2020153853A/en
Publication of JP2020153853A publication Critical patent/JP2020153853A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
  • Investigating And Analyzing Materials By Characteristic Methods (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Details Of Resistors (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

To provide a sulfuration detection sensor, capable of preventing a sulfuration detection sensor from being undesirably sulfurated when not in use before being mounted on a circuit board and accurately detecting the degree of sulfuration after being mounted on the circuit board.SOLUTION: A sulfuration detection sensor 10 comprises: a rectangular parallelepiped shaped insulating substrate 1; a pair of outer electrodes 6 provided in both end portions of the insulating substrate 1 in the longitudinal direction, a sulfuration detection conductor 2 provided on the surface of the insulating substrate 1 so as to connect between the outer electrodes; and a dissolution peeling type resist film 3 having sulfuration gas impermeability and provided so as to cover a central portion of the sulfuration detection conductor 2. When peeling and removing the dissolution peeling type resist film 3 after mounting the sulfuration detection sensor 10 on a circuit board 11, the central portion of the sulfuration detection conductor 2 is exposed to the outside to form a sulfuration detector 2a, and in the state, the sulfuration detection sensor 10 is exposed to an atmosphere including sulfuration gas and used.SELECTED DRAWING: Figure 2

Description

本発明は、腐食環境の累積的な硫化量を検出するための硫化検出センサと、そのような硫化検出センサの実装方法に関する。 The present invention relates to a sulfurization detection sensor for detecting the cumulative amount of sulfurization in a corrosive environment, and a method for mounting such a sulfurization detection sensor.

一般的にチップ抵抗器等の電子部品の内部電極としては、比抵抗の低いAg(銀)系の電極材料が使用されているが、銀は硫化ガスに曝されると硫化銀となり、硫化銀は絶縁物であることから、電子部品が断線してしまうという不具合が発生してしまう。そこで近年では、AgにPd(パラジウム)やAu(金)を添加して硫化しにくい電極を形成したり、電極に硫化ガスが到達しにくい構造とする等の硫化対策が講じられている。 Generally, Ag (silver) -based electrode materials with low resistivity are used as internal electrodes of electronic components such as chip resistors, but silver becomes silver sulfide when exposed to sulfide gas, and silver sulfide. Since is an insulator, there is a problem that electronic parts are broken. Therefore, in recent years, sulfurization measures have been taken, such as adding Pd (palladium) or Au (gold) to Ag to form an electrode that is difficult to sulfurize, or making the structure so that sulfurized gas does not easily reach the electrode.

しかし、このような硫化対策を電子部品に講じたとしても、当該電子部品が硫化ガス中に長期間曝された場合や高濃度の硫化ガスに曝された場合は、断線を完全に防ぐことが難しくなるため、未然に断線を検知して予期せぬタイミングでの故障発生を防止することが必要となる。 However, even if such sulfurization measures are taken for electronic components, disconnection can be completely prevented when the electronic components are exposed to sulfurized gas for a long period of time or exposed to high-concentration sulfurized gas. Since it becomes difficult, it is necessary to detect the disconnection in advance and prevent the occurrence of a failure at an unexpected timing.

そこで従来より、特許文献1に記載されているように、電子部品の累積的な硫化の度合いを検出して、電子部品が硫化断線する等して故障する前に危険性を検出可能とした硫化検出センサが提案されている。 Therefore, conventionally, as described in Patent Document 1, sulfurization that can detect the degree of cumulative sulfurization of an electronic component and detect the risk before the electronic component fails due to sulfurization disconnection or the like. Detection sensors have been proposed.

特許文献1に記載された硫化検出センサは、絶縁基板上にAgを主体とした硫化検出導体を形成し、この硫化検出導体を覆うように透明で硫化ガス透過性のある保護膜を形成すると共に、絶縁基板の両側端部に硫化検出導体に接続する端面電極を形成した構成となっている。このように構成された硫化検出センサは、硫化ガスを含む雰囲気中に配置されると、時間経過に伴って硫化ガスが保護膜を透過して硫化検出導体に接するため、硫化ガスの濃度と経過時間に応じて硫化検出導体が硫化されていく。硫化検出導体は、硫化の度合いが進むにつれて銀色から薄茶色、紫色、灰色、黒色の順に変化していき、また、硫化検出導体を構成する銀が硫化銀に変化するため、硫化の度合いが進むにつれて抵抗値が次第に上昇していく。 The sulfurization detection sensor described in Patent Document 1 forms a sulfurization detection conductor mainly composed of Ag on an insulating substrate, and forms a transparent and sulfide gas permeable protective film so as to cover the sulfurization detection conductor. , The end face electrodes connected to the sulfurization detection conductor are formed on both side ends of the insulating substrate. When the sulfurization detection sensor configured in this way is placed in an atmosphere containing a sulfurization gas, the sulfurization gas permeates the protective film and comes into contact with the sulfurization detection conductor with the passage of time, so that the concentration and progress of the sulfurization gas. The sulfurization detection conductor is sulfurized with time. The sulfurization detection conductor changes in the order of silver to light brown, purple, gray, and black as the degree of sulfurization progresses, and the silver constituting the sulfurization detection conductor changes to silver sulfide, so that the degree of sulfurization progresses. The resistance value gradually increases as it increases.

そして、チップ抵抗器等の他の電子部品が実装されている回路基板に硫化検出回路を設けると共に、この硫化検出回路に上記構成の硫化検出センサを接続しておき、硫化の度合いに伴って変化する硫化検出導体に光を照射することによる反射光の光量を検出したり、硫化の度合いに伴って変化する硫化検出導体の抵抗値を検出することにより、累積的な硫化の度合いを検出するようにしている。 Then, a sulfurization detection circuit is provided on a circuit board on which other electronic components such as a chip resistor are mounted, and a sulfurization detection sensor having the above configuration is connected to this sulfurization detection circuit, which changes according to the degree of sulfurization. By detecting the amount of reflected light by irradiating the sulfurization detection conductor with light, or by detecting the resistance value of the sulfurization detection conductor that changes with the degree of sulfurization, the cumulative degree of sulfurization is detected. I have to.

特開2009−250611号公報Japanese Unexamined Patent Publication No. 2009-250611

しかし、硫化検出センサ等の電子部品は、製造されてから回路基板に搭載されて使用されるまでの時間がバラバラであるため、その間に上記構成の硫化検出センサが硫化ガスに曝されてしまうと、回路基板に搭載される前に硫化検出導体が硫化されてしまうことになる。すなわち、硫化検出センサの保管場所等の外部環境により、回路基板に搭載する時点で硫化検出導体の硫化がある程度進行していることがあるため、累積的な硫化の度合いを正確に検出することができなくなる。 However, since electronic components such as sulfurization detection sensors have different times from being manufactured to being mounted on a circuit board and used, if the sulfurization detection sensor having the above configuration is exposed to sulfurized gas during that time. , The sulfurization detection conductor will be sulfurized before it is mounted on the circuit board. That is, due to the external environment such as the storage location of the sulfurization detection sensor, the sulfurization of the sulfurization detection conductor may have progressed to some extent at the time of mounting on the circuit board, so that the cumulative degree of sulfurization can be accurately detected. become unable.

本発明は、このような従来技術の実情に鑑みてなされたもので、その第1の目的は、硫化の度合いを正確に検出することができる硫化検出センサを提供することにあり、第2の目的は、そのような硫化検出センサの実装方法を提供することにある。 The present invention has been made in view of such an actual situation of the prior art, and a first object thereof is to provide a sulfurization detection sensor capable of accurately detecting the degree of sulfurization, and a second object thereof. An object is to provide a method of mounting such a sulfurization detection sensor.

上記第1の目的を達成するために、本発明の硫化検出センサは、直方体形状の絶縁基板と、この絶縁基板の長手方向両端部に設けられた一対の外部電極と、これら一対の外部電極間を接続するように前記絶縁基板の主面に設けられた硫化検出導体と、この硫化検出導体の少なくとも一部を覆うように設けられた硫化ガス非透過性の溶解剥離型レジスト膜とを備え、前記硫化検出導体は、前記溶解剥離型レジスト膜を除去することで外部に露出する硫化検出部を有していることを特徴としている。 In order to achieve the first object, the sulfurization detection sensor of the present invention has a rectangular body-shaped insulating substrate, a pair of external electrodes provided at both ends in the longitudinal direction of the insulating substrate, and between the pair of external electrodes. A sulfide detection conductor provided on the main surface of the insulating substrate so as to connect the sulfide detection conductor, and a sulfide gas opaque dissolution and peeling type resist film provided so as to cover at least a part of the sulfide detection conductor. The sulfide detection conductor is characterized by having a sulfide detection portion exposed to the outside by removing the dissolution-release type resist film.

このように構成された硫化検出センサでは、硫化検出導体の表面が硫化ガス非透過性の溶解剥離型レジスト膜で覆われているため、回路基板に搭載されるまでの保管時や搬送時等の非使用中に硫化ガスに曝されたとしても、硫化検出導体の硫化が溶解剥離型レジスト膜によって阻止される。そして、硫化検出センサを回路基板に搭載した後、当該回路基板を溶剤に浸漬する等して溶解剥離型レジスト膜を剥離すると、それまで溶解剥離型レジスト膜によって覆われていた部分の硫化検出導体が外部に露出して硫化検出部となるため、使用時には硫化検出部によって硫化の度合いを正確に検出することができる。 In the sulfurization detection sensor configured in this way, since the surface of the sulfurization detection conductor is covered with a dissolution-release resist film that is impermeable to sulfurized gas, it can be stored or transported until it is mounted on a circuit board. Even when exposed to sulfurized gas during non-use, the sulfurization of the sulfurization detection conductor is blocked by the dissolution-release resist film. Then, after mounting the sulfurization detection sensor on the circuit board, when the dissolution-release type resist film is peeled off by immersing the circuit board in a solvent or the like, the sulfurization detection conductor in the portion covered by the dissolution-release type resist film until then. Is exposed to the outside and becomes a sulfurization detection unit, so that the degree of sulfurization can be accurately detected by the sulfurization detection unit during use.

上記の構成において、絶縁基板の主面に硫化検出導体の両端部に接続する一対の表電極を設け、溶解剥離型レジスト膜が硫化検出導体の全体と表電極の一部を覆うようにすると、実質的に外部電極と硫化検出導体が隔離されるため、外部電極に接続させる実装時の熱等のストレスにより、硫化検出導体にダメージを与えてしまうことを防止できる。 In the above configuration, when a pair of surface electrodes connected to both ends of the sulfide detection conductor are provided on the main surface of the insulating substrate so that the melt-release type resist film covers the entire sulfide detection conductor and a part of the surface electrodes. Since the external electrode and the sulfide detection conductor are substantially separated from each other, it is possible to prevent the sulfide detection conductor from being damaged by stress such as heat during mounting connected to the external electrode.

上記第2の目的を達成するために、本発明による硫化検出センサの実装方法は、上記構成の硫化検出センサを回路基板に搭載して、前記外部電極と前記回路基板の配線パターンとの間を半田または導電性接着剤により接合した後、前記溶解剥離型レジスト膜を溶剤で除去することにより、前記硫化検出導体に外部に露出する硫化検出部を形成するようにしたことを特徴としている。 In order to achieve the second object, the method for mounting the sulfide detection sensor according to the present invention is to mount the sulfide detection sensor having the above configuration on a circuit board and to perform between the external electrode and the wiring pattern of the circuit board. After joining with solder or a conductive adhesive, the dissolution-release type resist film is removed with a solvent to form a sulfide detection portion exposed to the outside on the sulfide detection conductor.

このように硫化検出センサの外部電極と回路基板の配線パターンとの間を半田や導電性接着剤で接合した後に、回路基板ごと硫化検出導体を溶剤に浸漬する等して溶解剥離型レジスト膜を除去すると、この時点で硫化検出導体に外部に露出する硫化検出部が形成されるため、実装前の非使用時における硫化検出センサの硫化を確実に阻止したうえで、実装後は硫化の度合いを正確に検出することができる。 In this way, after joining the external electrode of the sulfurization detection sensor and the wiring pattern of the circuit board with solder or a conductive adhesive, the sulfurization detection conductor is immersed in a solvent together with the circuit board to form a dissolution-release resist film. When removed, a sulfurization detection part exposed to the outside is formed on the sulfurization detection conductor at this point, so that the sulfurization of the sulfurization detection sensor during non-use before mounting is surely prevented, and the degree of sulfurization is determined after mounting. It can be detected accurately.

本発明によれば、回路基板に実装する前の非使用時に硫化検出センサが不所望に硫化してしまうことを防止できると共に、回路基板に実装後は硫化の度合いを正確に検出することができる。 According to the present invention, it is possible to prevent the sulfurization detection sensor from undesirably sulfurizing when not in use before mounting on the circuit board, and it is possible to accurately detect the degree of sulfurization after mounting on the circuit board. ..

本発明の第1実施形態例に係る硫化検出センサの平面図である。It is a top view of the sulfurization detection sensor which concerns on 1st Embodiment of this invention. 図1のII−II線に沿う断面図である。It is sectional drawing which follows the line II-II of FIG. 該硫化検出センサの製造工程を示す平面図である。It is a top view which shows the manufacturing process of the sulfurization detection sensor. 該硫化検出センサの製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process of the sulfurization detection sensor. 該硫化検出センサを回路基板に実装する手順を示す説明図である。It is explanatory drawing which shows the procedure of mounting the sulfurization detection sensor on a circuit board. 本発明の第2実施形態例に係る硫化検出センサの平面図である。It is a top view of the sulfurization detection sensor which concerns on 2nd Embodiment of this invention. 図6のVII−VII線に沿う断面図である。It is sectional drawing which follows the line VII-VII of FIG. 該硫化検出センサを回路基板に実装する手順を示す説明図である。It is explanatory drawing which shows the procedure of mounting the sulfurization detection sensor on a circuit board.

以下、発明の実施の形態について図面を参照しながら説明すると、図1は本発明の第1実施形態例に係る硫化検出センサの平面図、図2は図1のII−II線に沿う断面図である。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of the sulfurization detection sensor according to the first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line II-II of FIG. Is.

図1と図2に示すように、第1実施形態例に係る硫化検出センサ10は、直方体形状の絶縁基板1と、絶縁基板1の表面上に設けられた硫化検出導体2と、この硫化検出導体2の中央部を覆うように設けられた溶解剥離型レジスト膜3と、絶縁基板1の裏面の長手方向両端部に設けられた一対の裏電極4と、絶縁基板1の長手方向両端面に設けられた一対の端面電極5と、硫化検出導体2の両端部と端面電極5および裏電極4の表面に設けられた一対の外部電極6と、によって主として構成されている。 As shown in FIGS. 1 and 2, the sulfide detection sensor 10 according to the first embodiment includes a rectangular-shaped insulating substrate 1, a sulfide detection conductor 2 provided on the surface of the insulation substrate 1, and sulfide detection thereof. A melt-release type resist film 3 provided so as to cover the central portion of the conductor 2, a pair of back electrodes 4 provided at both ends in the longitudinal direction of the back surface of the insulating substrate 1, and both end surfaces in the longitudinal direction of the insulating substrate 1. It is mainly composed of a pair of end face electrodes 5 provided, and a pair of external electrodes 6 provided on the surfaces of both ends of the sulfurization detection conductor 2, the end face electrodes 5, and the back electrode 4.

絶縁基板1は、後述する大判基板を縦横の分割溝に沿って分割して多数個取りされたものであり、大判基板の主成分はアルミナを主成分とするセラミックス基板である。 The insulating substrate 1 is obtained by dividing a large-format substrate, which will be described later, along vertical and horizontal dividing grooves and taking a large number of the insulating substrate 1, and the main component of the large-format substrate is a ceramic substrate containing alumina as a main component.

硫化検出導体2は、銀を主成分とするAg系ペーストをスクリーン印刷して乾燥・焼成したものであり、絶縁基板1の短手方向両端部を除く表面の大部分を覆うように形成されている。また、この硫化検出導体2は、硫化ガスに曝されることで断線させたいタイミングを考慮して、Agの含有量を調整させてある。 The sulfide detection conductor 2 is obtained by screen-printing an Ag-based paste containing silver as a main component, drying and firing, and is formed so as to cover most of the surface of the insulating substrate 1 except for both ends in the lateral direction. There is. Further, the sulfurization detection conductor 2 has an Ag content adjusted in consideration of the timing at which the wire is desired to be broken by being exposed to the sulfurization gas.

溶解剥離型レジスト膜3(以下、レジスト膜と称す)は、硫化ガスの透過しにくい硫化ガス非透過性の材料からなり、フェノール系樹脂ペースト等をスクリーン印刷して加熱硬化させたものである。このレジスト膜3は硫化検出導体2の中央部を覆うように形成されているため、硫化ガスがレジスト膜3を通過して硫化検出導体2の中央部に到達しないようになっている。ただし、レジスト膜3はアルコール系溶剤等を用いて剥離することが可能であり、後述するように、レジスト膜3を剥離することによって硫化検出導体2の中央部に外部に露出する硫化検出部が形成される。また、レジスト膜3の形成後に行われる外部電極6の形成時にメッキ液等で剥離しないように、レジスト膜3の材料やメッキ液の選定を行う必要がある。 The melt-release type resist film 3 (hereinafter referred to as a resist film) is made of a sulfide gas impermeable material in which sulfide gas is difficult to permeate, and is obtained by screen-printing a phenolic resin paste or the like and heat-curing it. Since the resist film 3 is formed so as to cover the central portion of the sulfurization detection conductor 2, the sulfurized gas does not pass through the resist film 3 and reach the central portion of the sulfurization detection conductor 2. However, the resist film 3 can be peeled off using an alcohol solvent or the like, and as will be described later, a sulfurization detection portion exposed to the outside is provided at the center of the sulfurization detection conductor 2 by peeling off the resist film 3. It is formed. Further, it is necessary to select the material and plating solution of the resist film 3 so that the external electrode 6 is not peeled off by the plating solution or the like when the external electrode 6 is formed after the resist film 3 is formed.

一対の裏電極4は銀を主成分とするAg系ペーストをスクリーン印刷して乾燥・焼成したものであり、これら裏電極4と硫化検出導体2は別工程で形成しても良いが、同時に形成しても良い。 The pair of back electrodes 4 are made by screen-printing an Ag-based paste containing silver as a main component, drying and firing, and these back electrodes 4 and the sulfurization detection conductor 2 may be formed in separate steps, but are formed at the same time. You may.

一対の端面電極5は、絶縁基板1の端面にNi/Crをスパッタリングしたり、Ag系ペーストを塗布して加熱硬化させたものであり、これら端面電極5は硫化検出導体2の長手方向両端部とそれに対応する裏電極4との間を導通するように形成されている。 The pair of end face electrodes 5 are obtained by sputtering Ni / Cr on the end faces of the insulating substrate 1 or applying Ag-based paste and heat-curing the end face electrodes 5, and these end face electrodes 5 are both ends in the longitudinal direction of the sulfurization detection conductor 2. It is formed so as to conduct electricity between the surface electrode 4 and the corresponding back electrode 4.

一対の外部電極6はバリヤー層と外部接続層の2層構造からなり、そのうちバリヤー層は電解メッキによって形成されたNiメッキ層であり、外部接続層は電解メッキによって形成されたSnメッキ層である。これら外部電極6により、レジスト膜3から露出する硫化検出導体2の両端部と端面電極5および裏電極4の表面が断面コ字状に被覆されている。 The pair of external electrodes 6 has a two-layer structure consisting of a barrier layer and an external connection layer, of which the barrier layer is a Ni plating layer formed by electrolytic plating and the external connection layer is a Sn plating layer formed by electrolytic plating. .. By these external electrodes 6, both ends of the sulfurization detection conductor 2 exposed from the resist film 3 and the surfaces of the end face electrode 5 and the back electrode 4 are covered with a U-shaped cross section.

次に、この硫化検出センサ10の製造工程について、図3と図4を用いて説明する。なお、図3(a)〜(e)はこの製造工程で用いられる大判基板を表面的に見た平面図、図4(a)〜(e)は図3(a)〜(e)の長手方向中央部に沿った1チップ相当分の断面図をそれぞれ示している。 Next, the manufacturing process of the sulfurization detection sensor 10 will be described with reference to FIGS. 3 and 4. 3 (a) to 3 (e) are plan views of the large-format substrate used in this manufacturing process as seen on the surface, and FIGS. 4 (a) to 4 (e) are the lengths of FIGS. 3 (a) to 3 (e). Cross-sectional views corresponding to one chip along the central portion of the direction are shown.

まず、図3(a)と図4(a)に示すように、絶縁基板1が多数個取りされる大判基板10Aを準備する。この大判基板10Aには予め1次分割溝と2次分割溝が格子状に設けられており、両分割溝によって区切られたマス目の1つ1つが1個分のチップ領域となる。図3には1個分のチップ領域に相当する大判基板10Aが代表して示されているが、実際は多数個分のチップ領域に相当する大判基板に対して以下に説明する各工程が一括して行われる。 First, as shown in FIGS. 3A and 4A, a large-format substrate 10A on which a large number of insulating substrates 1 are taken is prepared. The large-format substrate 10A is provided with a primary dividing groove and a secondary dividing groove in a grid pattern in advance, and each of the squares divided by the two dividing grooves serves as a chip region for one piece. In FIG. 3, a large-format substrate 10A corresponding to one chip region is represented as a representative, but in reality, each step described below is collectively applied to a large-format substrate corresponding to a large number of chip regions. Is done.

すなわち、図3(b)と図4(b)に示すように、この大判基板10Aの表面にAgを主成分とするAg系ペーストをスクリーン印刷した後、これを乾燥・焼成することにより、大判基板10Aの表面に硫化検出導体2を形成する。また、これと同時あるいは前後して、大判基板10Aの裏面にAg系ペーストをスクリーン印刷した後、これを乾燥・焼成することにより、所定間隔を存して対向する一対の裏電極4を形成する。 That is, as shown in FIGS. 3 (b) and 4 (b), an Ag-based paste containing Ag as a main component is screen-printed on the surface of the large-format substrate 10A, and then dried and fired to obtain a large-format substrate. The sulfide detection conductor 2 is formed on the surface of the substrate 10A. Further, at the same time or before and after this, an Ag-based paste is screen-printed on the back surface of the large-format substrate 10A, and then dried and fired to form a pair of back electrodes 4 facing each other at predetermined intervals. ..

次に、硫化検出導体2の中央部にフェノール系樹脂ペーストをスクリーン印刷し、これを加熱硬化することにより、図3(c)と図4(c)に示すように、硫化検出導体2の中央部を覆うように硫化ガス非透過性のレジスト膜3を形成する。 Next, a phenolic resin paste is screen-printed on the center of the sulfurization detection conductor 2 and heat-cured to heat and cure the phenol-based resin paste to the center of the sulfurization detection conductor 2 as shown in FIGS. 3 (c) and 4 (c). A sulfide gas impermeable resist film 3 is formed so as to cover the portion.

次に、大判基板10Aを一次分割溝に沿って短冊状基板10Bに1次分割した後、短冊状基板10Bの分割面を覆うようにNi/Crをスパッタリングすることにより、図3(d)と図4(d)に示すように、硫化検出導体2の長手方向両端部とそれに対応する裏電極4との間を接続する一対の端面電極5を形成する。なお、短冊状基板10Bの分割面にNi/Crをスパッタリングする代わりに、Ag系ペーストを塗布して加熱硬化させることにより端面電極5を形成するようにしても良い。 Next, the large-format substrate 10A is first divided into strip-shaped substrates 10B along the primary dividing groove, and then Ni / Cr is sputtered so as to cover the divided surface of the strip-shaped substrate 10B. As shown in FIG. 4D, a pair of end face electrodes 5 are formed to connect both ends of the sulfurization detection conductor 2 in the longitudinal direction and the corresponding back electrodes 4. Instead of sputtering Ni / Cr on the divided surface of the strip-shaped substrate 10B, the end face electrode 5 may be formed by applying an Ag-based paste and heat-curing it.

次に、短冊状基板10Bを二次分割溝に沿って複数のチップ状基板10Cに2次分割し、これらチップ状基板10Cに対して電解メッキを施してNi−Snメッキ層を形成することにより、図3(e)と図4(e)に示すように、チップ状基板10Cの長手方向両端部に断面コ字状の外部電極6を形成する。これら外部電極6により、レジスト膜3から露出する硫化検出導体2の両端部と端面電極5および裏電極4の表面が覆われ、図1,2に示す硫化検出センサ10が完成する。 Next, the strip-shaped substrate 10B is secondarily divided into a plurality of chip-shaped substrates 10C along the secondary dividing groove, and the chip-shaped substrates 10C are electrolytically plated to form a Ni—Sn plating layer. As shown in FIGS. 3 (e) and 4 (e), external electrodes 6 having a U-shaped cross section are formed at both ends of the chip-shaped substrate 10C in the longitudinal direction. These external electrodes 6 cover both ends of the sulfurization detection conductor 2 exposed from the resist film 3 and the surfaces of the end face electrode 5 and the back electrode 4, and the sulfurization detection sensor 10 shown in FIGS. 1 and 2 is completed.

このように構成された硫化検出センサ10は、他の電子部品と共に回路基板に実装された後、該回路基板を硫化ガスを含む雰囲気に晒すことで使用されるが、回路基板に搭載されるまでの非使用中(保管時や搬送時等)において、硫化検出導体2の表面は硫化ガス非透過性のレジスト膜3と外部電極6とによって覆われている。このため、硫化検出センサ10が回路基板に搭載されるまでの非使用中に硫化ガスに晒されたとしても、硫化検出導体2が硫化されてしまうことはなく、その状態を回路基板に実装するまで維持することができる。 The sulfurization detection sensor 10 configured in this way is used by exposing the circuit board to an atmosphere containing sulfide gas after being mounted on the circuit board together with other electronic components, until it is mounted on the circuit board. The surface of the sulfide detection conductor 2 is covered with a sulfide gas impermeable resist film 3 and an external electrode 6 during non-use (during storage, transportation, etc.). Therefore, even if the sulfurization detection sensor 10 is exposed to sulfurized gas during non-use until it is mounted on the circuit board, the sulfurization detection conductor 2 is not sulphurized, and the state is mounted on the circuit board. Can be maintained up to.

図5は硫化検出センサ10を回路基板に実装する手順を示す断面図である。まず、図5(a)に示すように、硫化検出導体2やレジスト膜3が形成された絶縁基板1の表面(主面)を上向きにした姿勢で硫化検出センサ10を回路基板11上に搭載し、回路基板11の表面に設けられた配線パターン12と硫化検出センサ10の外部電極6との間を半田13で接合する。なお、半田の代わりに導電性接着剤を用いることも可能である。しかる後、回路基板11ごと硫化検出センサ10を他の電子部品に悪影響を与えないように溶剤に浸漬し、必要に応じて超音波振動を付与してレジスト膜3を剥離・除去すると、図5(b)に示すように、それまでレジスト膜3で覆われていた硫化検出導体2の中央部が露出するため、この時点で硫化検出導体2の中央部に外部に露出する硫化検出部2aが形成される。したがって、その後に回路基板11ごと硫化検出センサ10を硫化ガスを含む雰囲気に晒して使用状態とすれば、直前に露出させた硫化検出部2aによって硫化の度合いを正確に検出することができる。 FIG. 5 is a cross-sectional view showing a procedure for mounting the sulfurization detection sensor 10 on a circuit board. First, as shown in FIG. 5A, the sulfide detection sensor 10 is mounted on the circuit board 11 with the surface (main surface) of the insulating substrate 1 on which the sulfide detection conductor 2 and the resist film 3 are formed facing upward. Then, the wiring pattern 12 provided on the surface of the circuit board 11 and the external electrode 6 of the sulfurization detection sensor 10 are joined by the solder 13. It is also possible to use a conductive adhesive instead of solder. After that, the sulfide detection sensor 10 together with the circuit board 11 is immersed in a solvent so as not to adversely affect other electronic components, and ultrasonic vibration is applied as necessary to peel off and remove the resist film 3. FIG. As shown in (b), since the central portion of the sulfurization detection conductor 2 previously covered with the resist film 3 is exposed, the sulfurization detection portion 2a exposed to the outside is exposed to the central portion of the sulfurization detection conductor 2 at this point. It is formed. Therefore, if the sulfurization detection sensor 10 together with the circuit board 11 is subsequently exposed to an atmosphere containing sulfur gas and put into a used state, the degree of sulfurization can be accurately detected by the sulfurization detection unit 2a exposed immediately before.

以上説明したように、第1実施形態例に係る硫化検出センサ10では、硫化検出導体2の表面が硫化ガス非透過性を有する溶解剥離型のレジスト膜3で覆われているため、回路基板11に搭載されるまでの保管時や搬送時等の非使用中に硫化ガスに晒されたとしても、硫化検出導体2の硫化が硫化ガス非透過性を有するレジスト膜3によって阻止される。そして、硫化検出センサ10を回路基板11に搭載した後、該回路基板11ごと硫化検出センサ10を溶剤に浸漬する等して溶解剥離型のレジスト膜3を剥離・除去すると、それまでレジスト膜3で覆われていた硫化検出導体2の中央部が外部に露出して硫化検出部2aとなるため、この硫化検出部2aによって硫化の度合いを正確に検出することができる。 As described above, in the sulfurization detection sensor 10 according to the first embodiment, since the surface of the sulfurization detection conductor 2 is covered with a dissolution-peeling resist film 3 having sulfide gas impermeable property, the circuit board 11 Even if it is exposed to sulfurized gas during non-use such as during storage or transportation until it is mounted on the conductor 2, the sulfurization of the sulfurization detection conductor 2 is blocked by the resist film 3 having the sulfurization gas impermeable property. Then, after the sulfurization detection sensor 10 is mounted on the circuit board 11, the dissolution and peeling type resist film 3 is peeled off and removed by immersing the sulfurization detection sensor 10 together with the circuit board 11 in a solvent. Since the central portion of the sulfurization detection conductor 2 covered with is exposed to the outside to become the sulfurization detection unit 2a, the degree of sulfurization can be accurately detected by the sulfurization detection unit 2a.

図6は本発明の第2実施形態例に係る硫化検出センサ20の平面図、図7は図6のVII−VII線に沿う断面図であり、図1に対応する部分には同一符号を付すことで重複説明を省略する。 FIG. 6 is a plan view of the sulfurization detection sensor 20 according to the second embodiment of the present invention, FIG. 7 is a cross-sectional view taken along the line VII-VII of FIG. 6, and the parts corresponding to FIG. 1 are designated by the same reference numerals. Therefore, the duplicate explanation is omitted.

図6と図7に示すように、第2実施形態例に係る硫化検出センサ20は、直方体形状の絶縁基板1と、絶縁基板1の表面における長手方向両端部に設けられた一対の表電極(内部電極)7と、これら表電極7間を橋絡するように絶縁基板1の表面に設けられた硫化検出導体2と、この硫化検出導体2の全体と表電極7の一部を覆うように設けられた硫化ガス非透過性を有する溶解剥離型のレジスト膜3と、絶縁基板1の裏面における長手方向両端部に設けられた一対の裏電極4と、絶縁基板1の長手方向両端面に設けられた一対の端面電極5と、表電極7と端面電極5および裏電極4の表面に設けられた一対の外部電極6と、によって主として構成されている。すなわち、第2実施形態例に係る硫化検出センサ20が第1実施形態例に係る硫化検出センサ10と大きく相違する点は、絶縁基板1の表面における長手方向両端部に設けられた一対の表電極7間に硫化検出導体2が接続されていることにあり、それ以外の構成は基本的に同じである。 As shown in FIGS. 6 and 7, the sulfurization detection sensor 20 according to the second embodiment includes a rectangular body-shaped insulating substrate 1 and a pair of surface electrodes (1) provided at both ends in the longitudinal direction on the surface of the insulating substrate (1). The internal electrode) 7, the sulfide detection conductor 2 provided on the surface of the insulating substrate 1 so as to bridge between the surface electrodes 7, the entire sulfide detection conductor 2 and a part of the surface electrode 7 are covered. The provided sulfide gas impermeable lysis and peeling type resist film 3, the pair of back electrodes 4 provided at both ends in the longitudinal direction on the back surface of the insulating substrate 1, and the provided end surfaces in the longitudinal direction of the insulating substrate 1. It is mainly composed of a pair of end face electrodes 5 and a pair of external electrodes 6 provided on the surfaces of the front electrode 7, the end face electrode 5, and the back electrode 4. That is, the major difference between the sulfurization detection sensor 20 according to the second embodiment and the sulfurization detection sensor 10 according to the first embodiment is that a pair of surface electrodes provided at both ends in the longitudinal direction on the surface of the insulating substrate 1. The sulfurization detection conductor 2 is connected between the 7s, and the other configurations are basically the same.

このように、硫化検出導体2の両端部に接続する一対の表電極7を設け、溶解剥離型のレジスト膜3で硫化検出導体2の全体と表電極7の一部を覆う構成により、実質的に外部電極6と硫化検出導体2が隔離されるため、外部電極6に接続させる実装時の熱等のストレスにより、硫化検出導体2にダメージを与えてしまうことを防止できる。 As described above, the pair of surface electrodes 7 connected to both ends of the sulfide detection conductor 2 are provided, and the entire sulfide detection conductor 2 and a part of the surface electrode 7 are covered with the melt-release type resist film 3, which is substantially present. Since the external electrode 6 and the sulfide detection conductor 2 are separated from each other, it is possible to prevent the sulfide detection conductor 2 from being damaged by stress such as heat during mounting connected to the external electrode 6.

図8は上記構成の硫化検出センサ20を回路基板11に実装する手順を示す断面図である。まず、図8(a)に示すように、絶縁基板1の表面(主面)を上向きにした姿勢で硫化検出センサ20を回路基板11上に搭載し、回路基板11の表面に設けられた配線パターン12と硫化検出センサ20の外部電極6との間を半田13(もしくは導電性接着剤)で接合する。しかる後、回路基板11ごと硫化検出センサ10を溶剤に浸漬してレジスト膜3を剥離・除去すると、図8(b)に示すように、それまでレジスト膜3で覆われていた硫化検出導体2の表面が露出するため、この時点で硫化検出導体2に外部に露出する硫化検出部2aが形成される。したがって、この状態で回路基板11ごと硫化検出センサ20を硫化ガスを含む雰囲気に晒して使用状態とすれば、直前に露出させた硫化検出部2aによって硫化の度合いを正確に検出することができる。 FIG. 8 is a cross-sectional view showing a procedure for mounting the sulfurization detection sensor 20 having the above configuration on the circuit board 11. First, as shown in FIG. 8A, the sulfurization detection sensor 20 is mounted on the circuit board 11 with the surface (main surface) of the insulating substrate 1 facing upward, and the wiring provided on the surface of the circuit board 11 is provided. The pattern 12 and the external electrode 6 of the sulfurization detection sensor 20 are joined with a solder 13 (or a conductive adhesive). After that, when the sulfurization detection sensor 10 together with the circuit board 11 is immersed in a solvent to peel off and remove the resist film 3, as shown in FIG. 8B, the sulfurization detection conductor 2 previously covered with the resist film 3 At this point, the sulfurization detection conductor 2 is formed with the sulfurization detection portion 2a exposed to the outside because the surface of the is exposed. Therefore, if the sulfurization detection sensor 20 together with the circuit board 11 is exposed to an atmosphere containing sulfur gas in this state and put into a used state, the degree of sulfurization can be accurately detected by the sulfurization detection unit 2a exposed immediately before.

以上説明したように、第2実施形態例に係る硫化検出センサ20では、硫化検出導体2の表面が硫化ガス非透過性を有する溶解剥離型のレジスト膜3で覆われているため、回路基板11に搭載されるまでの保管時や搬送時等の非使用中に硫化ガスに晒されたとしても、硫化検出導体2の硫化が硫化ガス非透過性を有するレジスト膜3によって阻止される。そして、硫化検出センサ20を回路基板11に搭載した後、該回路基板11ごと硫化検出センサ20を溶剤に浸漬する等して溶解剥離型のレジスト膜3を剥離・除去すると、それまでレジスト膜3で覆われていた硫化検出導体2の表面が露出して硫化検出部2aとなるため、この硫化検出部2aによって硫化の度合いを正確に検出することができ、第1実施形態例と同様の作用効果を奏することができる。 As described above, in the sulfurization detection sensor 20 according to the second embodiment, since the surface of the sulfurization detection conductor 2 is covered with the dissolution-peeling resist film 3 having sulfide gas impermeable property, the circuit board 11 Even if it is exposed to sulfurized gas during non-use such as during storage or transportation until it is mounted on the conductor 2, the sulfurization of the sulfurization detection conductor 2 is blocked by the resist film 3 having the sulfurization gas impermeable property. Then, after the sulfurization detection sensor 20 is mounted on the circuit board 11, the dissolution and peeling type resist film 3 is peeled off and removed by immersing the sulfurization detection sensor 20 together with the circuit board 11 in a solvent, and the resist film 3 is peeled off until then. Since the surface of the sulfurization detection conductor 2 covered with is exposed to become the sulfurization detection unit 2a, the degree of sulfurization can be accurately detected by the sulfurization detection unit 2a, and the same operation as in the first embodiment. It can be effective.

1 絶縁基板
2 硫化検出導体
2a 硫化検出部
3 溶解剥離型レジスト膜
4 裏電極
5 端面電極
6 外部電極
7 表電極
10,20 硫化検出センサ
10A 大判基板
10B 短冊状基板
10C チップ状基板
11 回路基板
12 配線パターン
13 半田
1 Insulated substrate 2 Sulfurization detection conductor 2a Sulfurization detection part 3 Dissolution and peeling type resist film 4 Back electrode 5 End face electrode 6 External electrode 7 Front electrode 10, 20 Sulfurization detection sensor 10A Large format substrate 10B Strip-shaped substrate 10C Chip-shaped substrate 11 Circuit board 12 Wiring pattern 13 Solder

Claims (3)

直方体形状の絶縁基板と、この絶縁基板の長手方向両端部に設けられた一対の外部電極と、これら一対の外部電極間を接続するように前記絶縁基板の主面に設けられた硫化検出導体と、この硫化検出導体の少なくとも一部を覆うように設けられた硫化ガス非透過性の溶解剥離型レジスト膜とを備え、
前記硫化検出導体は、前記溶解剥離型レジスト膜を除去することで外部に露出する硫化検出部を有していることを特徴とする硫化検出センサ。
A rectangular-shaped insulating substrate, a pair of external electrodes provided at both ends in the longitudinal direction of the insulating substrate, and a sulfurization detection conductor provided on the main surface of the insulating substrate so as to connect the pair of external electrodes. A sulfide gas impermeable dissolution-release type resist film provided so as to cover at least a part of the sulfide detection conductor is provided.
The sulfurization detection conductor is characterized by having a sulfurization detection portion exposed to the outside by removing the dissolution-release type resist film.
請求項1に記載の硫化検出センサにおいて、前記絶縁基板の主面に前記硫化検出導体の両端部に接続する一対の表電極を設け、前記溶解剥離型レジスト膜が前記硫化検出導体の全体と前記表電極の一部を覆っていることを特徴とする硫化検出センサ。 In the sulfurization detection sensor according to claim 1, a pair of surface electrodes connected to both ends of the sulfurization detection conductor are provided on the main surface of the insulating substrate, and the melt-release type resist film forms the entire sulfurization detection conductor and the said. A sulfurization detection sensor characterized by covering a part of the surface electrode. 請求項1または2に記載の硫化検出センサを回路基板に搭載して、前記外部電極と前記回路基板の配線パターンとの間を半田または導電性接着剤により接合した後、前記溶解剥離型レジスト膜を溶剤で除去することにより、前記硫化検出導体に外部に露出する硫化検出部を形成するようにしたことを特徴とする硫化検出センサの実装方法。 The sulfurization detection sensor according to claim 1 or 2 is mounted on a circuit board, and after joining the external electrode and the wiring pattern of the circuit board with solder or a conductive adhesive, the dissolution-release type resist film is used. A method for mounting a sulfide detection sensor, characterized in that a sulfide detection portion exposed to the outside is formed on the sulfide detection conductor by removing the sulfide with a solvent.
JP2019053352A 2019-03-20 2019-03-20 Sulfuration detection sensor and method for mounting the same Pending JP2020153853A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019053352A JP2020153853A (en) 2019-03-20 2019-03-20 Sulfuration detection sensor and method for mounting the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019053352A JP2020153853A (en) 2019-03-20 2019-03-20 Sulfuration detection sensor and method for mounting the same

Publications (1)

Publication Number Publication Date
JP2020153853A true JP2020153853A (en) 2020-09-24

Family

ID=72558666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019053352A Pending JP2020153853A (en) 2019-03-20 2019-03-20 Sulfuration detection sensor and method for mounting the same

Country Status (1)

Country Link
JP (1) JP2020153853A (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02196446A (en) * 1989-01-25 1990-08-03 Fujitsu Ltd Manufacture of semiconductor device
JP2000068105A (en) * 1998-08-25 2000-03-03 Matsushita Electric Ind Co Ltd Resistor and method of producing the same
JP2008084905A (en) * 2006-09-26 2008-04-10 Taiyosha Electric Co Ltd Chip resistor
JP2009250611A (en) * 2008-04-01 2009-10-29 Taiyosha Electric Co Ltd Sulfuration detecting sensor, sulfuration detection circuit, and manufacturing method of sulfuration detection sensor
JP2010153726A (en) * 2008-12-26 2010-07-08 Renesas Technology Corp Manufacturing method for semiconductor device, and semiconductor device
JP2014135415A (en) * 2013-01-11 2014-07-24 Toyo Kohan Co Ltd Semiconductor package, semiconductor package substrate and manufacturing methods thereof
JP2018032670A (en) * 2016-08-22 2018-03-01 Koa株式会社 Chip component, mounting structure of chip component, and manufacturing method of chip resistor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02196446A (en) * 1989-01-25 1990-08-03 Fujitsu Ltd Manufacture of semiconductor device
JP2000068105A (en) * 1998-08-25 2000-03-03 Matsushita Electric Ind Co Ltd Resistor and method of producing the same
JP2008084905A (en) * 2006-09-26 2008-04-10 Taiyosha Electric Co Ltd Chip resistor
JP2009250611A (en) * 2008-04-01 2009-10-29 Taiyosha Electric Co Ltd Sulfuration detecting sensor, sulfuration detection circuit, and manufacturing method of sulfuration detection sensor
JP2010153726A (en) * 2008-12-26 2010-07-08 Renesas Technology Corp Manufacturing method for semiconductor device, and semiconductor device
JP2014135415A (en) * 2013-01-11 2014-07-24 Toyo Kohan Co Ltd Semiconductor package, semiconductor package substrate and manufacturing methods thereof
JP2018032670A (en) * 2016-08-22 2018-03-01 Koa株式会社 Chip component, mounting structure of chip component, and manufacturing method of chip resistor

Similar Documents

Publication Publication Date Title
US10192659B2 (en) Chip resistor
JP6699969B2 (en) Multilayer wiring board for electronic component inspection
JP7219146B2 (en) Manufacturing method of sulfuration detection sensor
JP2021103724A (en) Sulfide detection resistor
JP7185541B2 (en) Sulfurization detection resistor
JP2020153853A (en) Sulfuration detection sensor and method for mounting the same
JP7256085B2 (en) Sulfurization detection sensor and manufacturing method of sulfuration detection sensor
WO2020246253A1 (en) Sulfurization detection sensor
WO2020202815A1 (en) Sulfurization detection sensor, sulfurization detection sensor manufacturing method, and sulfurization detection sensor mounting method
JP7166183B2 (en) Sulfurization detection resistor
JP4417186B2 (en) Resistor and manufacturing method thereof
JP7359714B2 (en) Sulfide detection sensor
JP7197393B2 (en) Sulfurization detection sensor and manufacturing method thereof
WO2020208931A1 (en) Sulfidation detection resistor
JP7440339B2 (en) Sulfide detection sensor and method for manufacturing the sulfide detection sensor
JP2021012066A (en) Sulfuration detection sensor
JP2018088496A (en) Electronic component and mounting method of electronic component
JP2021067463A (en) Sulfurization detection sensor and mounting structure of sulfurization detection sensor
JP2007073755A (en) Method of manufacturing chip resistor
JP3767084B2 (en) Resistor manufacturing method
JP2023004230A (en) Sulfidation detection sensor
JP2021061311A (en) Chip component
JP2021012067A (en) Sulfuration detection sensor
JP2020126002A (en) Sulfurization detection sensor
JPH10125974A (en) Magnetoresistance element

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220314

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20221116

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221122

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20230516