JP2020155765A - 半導体モジュールおよび製造方法 - Google Patents
半導体モジュールおよび製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 229
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 135
- 239000002184 metal Substances 0.000 claims abstract description 135
- 229920005989 resin Polymers 0.000 claims description 94
- 239000011347 resin Substances 0.000 claims description 94
- 238000007789 sealing Methods 0.000 claims description 65
- 230000000630 rising effect Effects 0.000 claims description 62
- 229910000679 solder Inorganic materials 0.000 claims description 57
- 238000005304 joining Methods 0.000 claims description 8
- 239000006260 foam Substances 0.000 claims description 4
- 229920002379 silicone rubber Polymers 0.000 claims description 3
- 239000004945 silicone rubber Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 230000035882 stress Effects 0.000 description 45
- 239000004033 plastic Substances 0.000 description 30
- 229920003023 plastic Polymers 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 26
- 238000001816 cooling Methods 0.000 description 21
- 238000004088 simulation Methods 0.000 description 21
- 239000000758 substrate Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000008646 thermal stress Effects 0.000 description 5
- 229910020935 Sn-Sb Inorganic materials 0.000 description 4
- 229910008757 Sn—Sb Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- -1 polyphenylene Polymers 0.000 description 4
- 229910020888 Sn-Cu Inorganic materials 0.000 description 3
- 229910019204 Sn—Cu Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
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- 239000003822 epoxy resin Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
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- 239000011810 insulating material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920001485 poly(butyl acrylate) polymer Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920002961 polybutylene succinate Polymers 0.000 description 2
- 239000004631 polybutylene succinate Substances 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 230000001141 propulsive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910020932 Sn-Sb-Ag Inorganic materials 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37025—Plural core members
- H01L2224/3703—Stacked arrangements
- H01L2224/37032—Two-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
特許文献1 特開2003−115512号公報
Claims (16)
- 上面電極および前記上面電極と反対側の下面電極を有する半導体チップと、
前記半導体チップの前記上面電極と電気的に接続される金属配線板と、
前記金属配線板上に設けられ、前記金属配線板よりも低い弾性率を有する、シート状の低弾性シートと
を備える半導体モジュール。 - 前記金属配線板は、
前記半導体チップの前記上面電極と接合するための接合部と、
前記接合部と接続され、前記半導体チップから離れる方向に延伸する立上り部と
を有する請求項1に記載の半導体モジュール。 - 前記低弾性シートは、前記接合部上および前記立上り部上の両方に設けられる
請求項2に記載の半導体モジュール。 - 前記低弾性シートは、前記接合部上に設けられ、前記立上り部上には設けられない
請求項2に記載の半導体モジュール。 - 前記低弾性シートは、前記接合部の端部において、前記金属配線板との接合面から外側にはみ出して設けられる
請求項2から4のいずれか一項に記載の半導体モジュール。 - 前記低弾性シートは、前記接合部の端部において、前記金属配線板との接合面を有し、
前記接合部は、前記半導体チップの前記上面電極とはんだ接合されている
請求項2から5のいずれか一項に記載の半導体モジュール。 - 前記半導体チップの前記上面電極と前記金属配線板とを接合するためのはんだ部と、
前記半導体チップおよび前記金属配線板を封止する封止樹脂と
をさらに備え、
前記封止樹脂は、前記はんだ部と接触している
請求項2から6のいずれか一項に記載の半導体モジュール。 - 前記封止樹脂は、前記金属配線板の前記接合部の側面と接触している
請求項7に記載の半導体モジュール。 - 前記低弾性シートの弾性率は、前記封止樹脂の弾性率よりも低い
請求項7または8に記載の半導体モジュール。 - 前記低弾性シートの弾性率は、前記封止樹脂の弾性率の10000分の1以上、10分の1以下である
請求項9に記載の半導体モジュール。 - 前記低弾性シートは、1MPa以上、1000Mpa以下の弾性率を有する
請求項1から10のいずれか一項に記載の半導体モジュール。 - 前記低弾性シートは、0.05mm以上、1.5mm以下の厚みを有する
請求項1から11のいずれか一項に記載の半導体モジュール。 - 前記低弾性シートは、発泡体、樹脂およびシリコーンゴムのいずれかを含む
請求項1から12のいずれか一項に記載の半導体モジュール。 - 半導体モジュールの製造方法であって、
半導体チップを提供する段階と、
前記半導体チップの上方に金属配線板をはんだ接合する段階と、
前記金属配線板よりも弾性率の低いシート状の低弾性シートを前記金属配線板に貼り付ける段階と
を備える製造方法。 - 前記低弾性シートを前記金属配線板に貼り付ける段階の後に、前記半導体チップの上方に前記金属配線板をはんだ接合する
請求項14に記載の製造方法。 - 前記半導体チップの上方に前記金属配線板をはんだ接合する段階の後に、前記低弾性シートを前記金属配線板に貼り付ける
請求項14に記載の製造方法。
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US16/794,236 US11387210B2 (en) | 2019-03-15 | 2020-02-19 | Semiconductor module and manufacturing method therefor |
CN202010111702.2A CN111696924A (zh) | 2019-03-15 | 2020-02-24 | 半导体模块及制造方法 |
DE102020105510.2A DE102020105510A1 (de) | 2019-03-15 | 2020-03-02 | Halbleitermodul und verfahren für seine herstellung |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009224548A (ja) * | 2008-03-17 | 2009-10-01 | Fuji Electric Device Technology Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP2011228336A (ja) * | 2010-04-15 | 2011-11-10 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
JP2017084881A (ja) * | 2015-10-23 | 2017-05-18 | 富士電機株式会社 | 半導体装置 |
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2019
- 2019-11-15 JP JP2019207470A patent/JP2020155765A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009224548A (ja) * | 2008-03-17 | 2009-10-01 | Fuji Electric Device Technology Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP2011228336A (ja) * | 2010-04-15 | 2011-11-10 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
JP2017084881A (ja) * | 2015-10-23 | 2017-05-18 | 富士電機株式会社 | 半導体装置 |
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