JP2020128500A - 接着剤組成物、接着フィルム、接着シート、並びに半導体装置及びその製造方法 - Google Patents
接着剤組成物、接着フィルム、接着シート、並びに半導体装置及びその製造方法 Download PDFInfo
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- JP2020128500A JP2020128500A JP2019021954A JP2019021954A JP2020128500A JP 2020128500 A JP2020128500 A JP 2020128500A JP 2019021954 A JP2019021954 A JP 2019021954A JP 2019021954 A JP2019021954 A JP 2019021954A JP 2020128500 A JP2020128500 A JP 2020128500A
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2924/153—Connection portion
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Abstract
Description
[式(1)中、Rは飽和又は不飽和の2価の炭化水素基を示し、R1は4価の有機基を示し、nは1〜10の整数を示す。]
一実施形態に係る接着剤組成物は、熱硬化性樹脂(以下、「(A)成分」という場合がある。)を含有する。本実施形態に係る接着剤組成物は、半導体素子と前記半導体素子を搭載する支持部材とを接着するために用いられる。本実施形態に係る接着剤組成物は、熱硬化性であり、半硬化(Bステージ)状態を経て、硬化処理後に完全硬化物(Cステージ)状態となり得る。
図1は、接着フィルムの一実施形態を示す模式断面図である。図1に示す接着フィルム1は、接着剤組成物をフィルム状に成形したものである。接着フィルム1は、半硬化(Bステージ)状態であってよい。このような接着フィルム1は、接着剤組成物を支持フィルムに塗布することによって形成することができる。接着剤組成物のワニス(接着剤ワニス)を用いる場合は、(A)成分、(B)成分、及び(C)成分、並びに必要に応じて添加される他の成分を溶剤中で混合し、混合液を混合又は混練して接着剤ワニスを調製し、接着剤ワニスを支持フィルムに塗布し、溶剤を加熱乾燥して除去することによって接着フィルム1を形成することができる。
図2は、接着シートの一実施形態を示す模式断面図である。図2に示す接着シート100は、基材2と、基材2上に設けられた接着フィルム1と、を備える。図3は、接着シートの他の一実施形態を示す模式断面図である。図3に示す接着シート110は、基材2と、基材2上に設けられた接着フィルム1と、接着フィルム1の基材2とは反対側の面に設けられたカバーフィルム3と、を備える。
<接着フィルムの作製>
表1に示す組成比(単位:質量部)で、各成分を配合し、均一になるように30分間撹拌し、実施例1〜5の接着剤組成物(接着剤ワニス)を得た。なお、表1に示す数値は、固形分の質量部を意味する。得られた接着剤組成物を、卓上コータを用いて離型処理されたPETフィルム(商品名:A−31、帝人フィルムソリューション株式会社製)上に塗工した。塗工の厚みはアプリケータを使用して調整した。塗工した接着剤組成物を120℃、10分間乾燥して、実施例1〜5の接着フィルムを得た。
(A1)一般式(1)で表されるマレイミド樹脂
(A1−1)BMI−3000(商品名、下記式(a)で表される樹脂(n=1〜10の混合物)、Designer Molecules Inc.製)(固形分:70質量%、トルエン溶液)
(A2−1)BANI−X(商品名、ビスアリルナジイミド、丸善石油化学株式会社製)
(A2−2)BMI−3000((A1−1)とは商品名は同じだが、異なるもの)(商品名、m−フェニレンビスマレイミド、新中村化学株式会社製)
(A3−1)A−DCP(商品名、トリシクロデカンジメタノールジアクリレート、新中村化学株式会社製)
(A3−2)YDF−8170C(商品名、ビスフェノールF型エポキシ樹脂、新日鉄住金化学株式会社製)
(B1)パークミルD(商品名、ジクミルパーオキサイド、日油株式会社製)
(B2)2P4MHZ(商品名、2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾール、四国化成工業株式会社製)
(C1)R−972(商品名、疎水性フュームドシリカ、日本アエロジル株式会社製)(固形分:10質量%、シクロペンタノン溶液)
(D1)シクロペンタノン
<接着剤組成物(接着剤ワニス)の調製>
YDF−8170C(商品名、ビスフェノールF型エポキシ樹脂、新日鉄住金化学株式会社製)30質量部、YDCN−700−10(商品名、クレゾールノボラック型エポキシ樹脂、新日鉄住金化学株式会社製)10質量部、LF2882(商品名、フェノールノボラック樹脂、DIC株式会社製)30質量部、HTR−860P−3(商品名、エポキシ基含有アクリル系共重合体、ナガセケムテックス株式会社製)30質量部、2P4MHZ(商品名、2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾール、四国化成工業株式会社製)1質量部、及びSO−C2(商品名、シリカフィラー、アドマファイン株式会社製)10質量部の混合物に、シクロヘキサノンを加えて均一になるように30分間撹拌し、比較例1の接着剤組成物(接着剤ワニス)を得た。得られた接着剤組成物を、卓上コータを用いて離型処理されたPETフィルム(商品名:NR−1、厚み38μm)上に塗工した。塗工の厚みはアプリケータを使用して調整した。塗工した接着剤組成物を120℃、10分間乾燥して、比較例1の接着フィルムを得た。
実施例及び比較例の接着フィルムを180℃で2時間加熱することによって硬化させ、所定のサイズ(60mm(縦)×2mm(横)×300μm(厚み))に切断し、30℃で6時間真空乾燥することによって、測定サンプルを作製した。誘電正接は10GHzにおいて得られる共振周波数及び無負荷Q値から算出した。誘電正接の測定は、ベクトル型ネットワークアナライザE8364B(キーサイト・テクノロジー社製)、10GHz共振器CP531(株式会社関東電子応用開発製)、及びプログラムCPMA−V2を用い、温度25℃で実施した。結果を表2に示す。
誘電正接(DF値)に優れていた実施例1〜5の接着フィルムについて、溶融粘度の測定を行った。溶融粘度は、低粘度粘弾性測定装置MCR−301(株式会社アントンパール・ジャパン(AntonPaar社)製)を用いて測定した。直径4cm、深さ5mmのアルミニウム製円形プレートEMS/CTD600(株式会社アントンパール・ジャパン製)の底部中央に、所定のサイズ(30mm(縦)×30mm(横)×300μm(厚み))の実施例の接着フィルムを貼付し、円形プレートを装置のステージに固定した。測定セルMesskorperachse D−CP/PP7(株式会社アントンパール・ジャパン製)を装置に取り付けた後、セルの先端には治具SPPYU08−07(株式会社アントンパール・ジャパン製)を装着した。治具の先端が円形プレートの底面から200μmの高さとなるように測定セルを下降し、治具の先端を接着フィルム内に埋没させた。測定条件を昇温10℃/min、周波数1Hzに設定し、25〜200℃の範囲で溶融粘度を測定した。当該温度範囲での溶融粘度の最低値を、最低溶融粘度として求めた。結果を表2に示す。
誘電正接(DF値)に優れていた実施例1〜5の接着フィルムについて、せん断接着力の測定を行った。半導体ウェハに、厚み20μmの実施例の接着フィルムを作製し、3×3mm角の半導体チップを切り出した。切り出した接着フィルム付きの半導体チップを、予め別に準備した5×5mm角の半導体チップに載せ、0.98N(100gf)で加圧しながら、120℃で2秒間圧着した。その後、180℃で3時間オーブンを用いて加熱し、半導体チップ同士が接着されたサンプルを得た。得られたサンプルについて、せん断接着力試験機Dage−4000(ノードソン・アドバンスト・テクノロジー株式会社)を用いて260℃のせん断接着力を測定した。260℃のせん断接着力が、1.0MPa以上であった場合を「A」、0.5MPa以上1.0MPa未満であった場合を「B」、0.5MPa未満であった場合を「C」と評価した。結果を表2に示す。
Claims (9)
- 前記熱硬化性樹脂が一般式(1)で表されるマレイミド樹脂以外のイミド骨格を有する樹脂をさらに含む、請求項1に記載の接着剤組成物。
- 請求項1又は2に記載の接着剤組成物をフィルム状に形成してなる、接着フィルム。
- 当該接着フィルムの硬化物の10GHzにおける誘電正接が0.01以下である、請求項3に記載の接着フィルム。
- 当該接着フィルムの25〜200℃における最低溶融粘度が200〜5000Pa・sである、請求項3又は4に記載の接着フィルム。
- 基材と、
前記基材の一方の面上に設けられた請求項4又は5に記載の接着フィルムと、
を備える、接着シート。 - 前記基材が、ダイシングテープである、請求項6に記載の接着シート。
- 半導体素子と、
前記半導体素子を搭載する支持部材と、
前記半導体素子及び前記支持部材の間に設けられ、前記半導体素子と前記支持部材とを接着する接着部材と、
を備え、
前記接着部材が、請求項4又は5に記載の接着フィルムの硬化物である、半導体装置。 - 半導体ウェハに、請求項6又は7に記載の接着シートの前記接着フィルムを貼り付ける工程と、
前記接着フィルムを貼り付けた前記半導体ウェハを切断することによって、複数の個片化された接着フィルム付き半導体素子を作製する工程と、
前記接着フィルム付き半導体素子を支持部材に接着する工程と、
を備える、半導体装置の製造方法。
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JP2018172529A (ja) * | 2017-03-31 | 2018-11-08 | 京セラ株式会社 | 半導体接着用シート及び半導体装置 |
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WO2016031552A1 (ja) * | 2014-08-29 | 2016-03-03 | 古河電気工業株式会社 | 導電性接着剤組成物 |
JP2018172529A (ja) * | 2017-03-31 | 2018-11-08 | 京セラ株式会社 | 半導体接着用シート及び半導体装置 |
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