JP2020119982A5 - - Google Patents

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JP2020119982A5
JP2020119982A5 JP2019009476A JP2019009476A JP2020119982A5 JP 2020119982 A5 JP2020119982 A5 JP 2020119982A5 JP 2019009476 A JP2019009476 A JP 2019009476A JP 2019009476 A JP2019009476 A JP 2019009476A JP 2020119982 A5 JP2020119982 A5 JP 2020119982A5
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JP
Japan
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plasma processing
period
power supply
frequency power
plasma
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JP2019009476A
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English (en)
Japanese (ja)
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JP2020119982A (ja
JP6960421B2 (ja
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Priority claimed from JP2019009476A external-priority patent/JP6960421B2/ja
Priority to JP2019009476A priority Critical patent/JP6960421B2/ja
Priority to KR1020200004218A priority patent/KR102810325B1/ko
Priority to US16/743,788 priority patent/US11062882B2/en
Priority to CN202010041705.3A priority patent/CN111477531A/zh
Priority to TW109101319A priority patent/TWI849037B/zh
Publication of JP2020119982A publication Critical patent/JP2020119982A/ja
Publication of JP2020119982A5 publication Critical patent/JP2020119982A5/ja
Publication of JP6960421B2 publication Critical patent/JP6960421B2/ja
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JP2019009476A 2019-01-23 2019-01-23 プラズマ処理装置及びプラズマ処理方法 Active JP6960421B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2019009476A JP6960421B2 (ja) 2019-01-23 2019-01-23 プラズマ処理装置及びプラズマ処理方法
KR1020200004218A KR102810325B1 (ko) 2019-01-23 2020-01-13 플라즈마 처리 장치 및 플라즈마 처리 방법
TW109101319A TWI849037B (zh) 2019-01-23 2020-01-15 電漿處理裝置及電漿處理方法
CN202010041705.3A CN111477531A (zh) 2019-01-23 2020-01-15 等离子体处理装置及等离子体处理方法
US16/743,788 US11062882B2 (en) 2019-01-23 2020-01-15 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019009476A JP6960421B2 (ja) 2019-01-23 2019-01-23 プラズマ処理装置及びプラズマ処理方法

Publications (3)

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JP2020119982A JP2020119982A (ja) 2020-08-06
JP2020119982A5 true JP2020119982A5 (cg-RX-API-DMAC7.html) 2021-10-14
JP6960421B2 JP6960421B2 (ja) 2021-11-05

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JP2019009476A Active JP6960421B2 (ja) 2019-01-23 2019-01-23 プラズマ処理装置及びプラズマ処理方法

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US (1) US11062882B2 (cg-RX-API-DMAC7.html)
JP (1) JP6960421B2 (cg-RX-API-DMAC7.html)
KR (1) KR102810325B1 (cg-RX-API-DMAC7.html)
CN (1) CN111477531A (cg-RX-API-DMAC7.html)
TW (1) TWI849037B (cg-RX-API-DMAC7.html)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230036847A (ko) * 2021-09-08 2023-03-15 삼성전자주식회사 고전압 전원 장치 및 이를 포함하는 플라즈마 식각 장비

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4672456B2 (ja) 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマ処理装置
TWI447803B (zh) * 2004-06-21 2014-08-01 Tokyo Electron Ltd A plasma processing apparatus, a plasma processing method, and a computer-readable memory medium
JP5466480B2 (ja) * 2009-02-20 2014-04-09 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置および記憶媒体
JP2010238881A (ja) * 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
US9287086B2 (en) * 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
KR20120022251A (ko) * 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
JP5977509B2 (ja) * 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US9922802B2 (en) * 2012-02-20 2018-03-20 Tokyo Electron Limited Power supply system, plasma etching apparatus, and plasma etching method
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
JP6424120B2 (ja) * 2015-03-23 2018-11-14 東京エレクトロン株式会社 電源システム、プラズマ処理装置及び電源制御方法
JP6392266B2 (ja) * 2016-03-22 2018-09-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10566177B2 (en) * 2016-08-15 2020-02-18 Applied Materials, Inc. Pulse shape controller for sputter sources
TWI788315B (zh) * 2016-12-08 2023-01-01 日商東京威力科創股份有限公司 電漿熔射裝置及電池用電極之製造方法
CN111434039B (zh) * 2017-12-07 2024-07-30 朗姆研究公司 用于半导体rf等离子体处理的脉冲内的rf脉冲
US10555412B2 (en) * 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage

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