JP2020107804A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

Info

Publication number
JP2020107804A
JP2020107804A JP2018247438A JP2018247438A JP2020107804A JP 2020107804 A JP2020107804 A JP 2020107804A JP 2018247438 A JP2018247438 A JP 2018247438A JP 2018247438 A JP2018247438 A JP 2018247438A JP 2020107804 A JP2020107804 A JP 2020107804A
Authority
JP
Japan
Prior art keywords
substrate
unit
processing apparatus
heat treatment
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018247438A
Other languages
Japanese (ja)
Other versions
JP7156940B2 (en
Inventor
憲幸 菊本
Noriyuki Kikumoto
憲幸 菊本
橋本　光治
Mitsuharu Hashimoto
光治 橋本
賢治 天久
Kenji Amahisa
賢治 天久
毅 冨田
Takeshi Tomita
毅 冨田
祐一 ▲高▼山
祐一 ▲高▼山
Yuichi Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Original Assignee
Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2018247438A priority Critical patent/JP7156940B2/en
Priority to TW108140188A priority patent/TWI747074B/en
Priority to CN201980086960.5A priority patent/CN113228239B/en
Priority to PCT/JP2019/049110 priority patent/WO2020137646A1/en
Priority to KR1020217017368A priority patent/KR102500916B1/en
Publication of JP2020107804A publication Critical patent/JP2020107804A/en
Application granted granted Critical
Publication of JP7156940B2 publication Critical patent/JP7156940B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J11/00—Manipulators not otherwise provided for
    • B25J11/0095—Manipulators transporting wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J9/00—Programme-controlled manipulators
    • B25J9/0084—Programme-controlled manipulators comprising a plurality of manipulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

To provide a technique for reducing contamination of a substrate which is transported after heat treatment.SOLUTION: A substrate processing apparatus 1 includes an indexer unit ID and a processing unit PU. The processing unit PU includes a fluid processing unit 30, a heat processing unit 40, a shuttle transfer mechanism 50, a first transfer robot 60, and a second transfer robot 70. The indexer unit ID supplies a substrate W stored in a carrier C to the processing unit PU. The heat treatment unit 40 is provided between the indexer unit ID and the fluid treatment unit 30. The substrate W supplied from the indexer unit ID is transferred to the indexer unit ID, the fluid processing unit 30, the heat processing unit 40, and the indexer unit ID in this order by the shuttle transfer mechanism 50, the first transfer robot 60, and the second transfer robot 70.SELECTED DRAWING: Figure 1

Description

この発明は、基板に対して加熱処理を含む各処理を行う基板処理装置に関する。処理対象となる基板には、例えば、半導体基板、液晶表示装置および有機ＥＬ（Electroluminescence）表示装置などのＦＰＤ（Flat Panel Display）用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板、太陽電池用基板、プリント基板などが含まれる。 The present invention relates to a substrate processing apparatus that performs each process including heat treatment on a substrate. Examples of substrates to be processed include semiconductor substrates, FPD (Flat Panel Display) substrates such as liquid crystal display devices and organic EL (Electroluminescence) display devices, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, It includes a photomask substrate, a ceramic substrate, a solar cell substrate, a printed circuit board, and the like.

基板の製造工程においては、基板処理装置において、基板に対して規定処理が行われた後、当該基板を加熱処理が行われる場合がある。例えば、特許文献１では、カセットステーションから供給された半導体ウエハを、搬送機構が、順に表面洗浄ユニット、裏面洗浄ユニット、加熱ユニット、冷却ユニットに搬送し、その後再びカセットステーションに搬送する。洗浄された半導体ウエハを加熱処理することによって、半導体ウエハが乾燥される。 In a substrate manufacturing process, a substrate processing apparatus may perform a prescribed process on a substrate and then heat the substrate. For example, in Patent Document 1, the transport mechanism sequentially transports the semiconductor wafers supplied from the cassette station to the front surface cleaning unit, the back surface cleaning unit, the heating unit, and the cooling unit, and then again to the cassette station. By heating the cleaned semiconductor wafer, the semiconductor wafer is dried.

特開平１０−２４２１０９号公報JP, 10-242109, A

しかしながら、特許文献１では、カセットステーション、表面洗浄ユニット、裏面洗浄ユニットおよび加熱ユニットが、この順番で配置されている。すなわち、加熱ユニットは、各洗浄ユニットの、カセットステーションとは反対側に設けられている。このため、加熱ユニットから取り出された半導体ウエハは、各洗浄ユニットの横を通過してカセットステーションに戻される。したがって、加熱処理後の半導体ウエハに各洗浄ユニットで発生した異物（洗浄液を含む。）が付着することによって、汚染されるおそれがあった。 However, in Patent Document 1, the cassette station, the front surface cleaning unit, the back surface cleaning unit, and the heating unit are arranged in this order. That is, the heating unit is provided on the opposite side of each cleaning unit from the cassette station. Therefore, the semiconductor wafer taken out of the heating unit passes through the side of each cleaning unit and is returned to the cassette station. Therefore, foreign matter (including the cleaning liquid) generated in each cleaning unit may be attached to the semiconductor wafer after the heat treatment, resulting in contamination.

そこで、本発明は、加熱処理後に搬送される基板の汚染を軽減する技術を提供することを目的とする。 Therefore, it is an object of the present invention to provide a technique for reducing contamination of a substrate that is transported after heat treatment.

上記課題を解決するため、第１態様は、基板を処理する基板処理装置であって、前記基板を収容する規定処理室および前記規定処理室において前記基板に対して規定処理を行う処理ツールを有する規定処理部と、前記基板を収納する収納室からの前記基板を前記規定処理部に供給する基板供給部と、前記基板供給部と前記規定処理部との間に設けられ、前記基板を収容する加熱処理室および前記加熱処理室にて前記基板を加熱するヒーターを有する加熱処理部と、前記基板供給部から供給される前記基板を、順に、前記規定処理部、前記加熱処理部、前記基板供給部に搬送する搬送部とを備える。 In order to solve the above problems, a first aspect is a substrate processing apparatus for processing a substrate, which includes a prescribed processing chamber that accommodates the substrate and a treatment tool that performs the prescribed treatment on the substrate in the prescribed processing chamber. A regulation processing unit, a substrate supply unit that supplies the substrate from a storage chamber that accommodates the substrate to the regulation processing unit, and is provided between the substrate supply unit and the regulation processing unit to accommodate the substrate A heat treatment section having a heat treatment chamber and a heater for heating the substrate in the heat treatment chamber, and the substrate supplied from the substrate supply section in the order of the prescribed treatment section, the heat treatment section, and the substrate supply. And a transporting unit for transporting the transporting unit.

第２態様は、第１態様の基板処理装置であって、前記処理ツールは、前記基板に流体を供給するノズルを含む。 A second aspect is the substrate processing apparatus of the first aspect, wherein the processing tool includes a nozzle that supplies a fluid to the substrate.

第３態様は、第２態様の基板処理装置であって、前記流体は、処理液を含む。 A third aspect is the substrate processing apparatus of the second aspect, wherein the fluid contains a processing liquid.

第４態様は、第１態様から第３態様のいずれか１つの基板処理装置であって、前記加熱処理部と前記規定処理部とが第１方向に離間して配置されており、前記搬送部は、前記加熱処理室と前記規定処理室との間に配置される第１搬送部、を含み、前記第１搬送部は、前記基板を保持する第１基板保持具、および前記第１基板保持具を第１方向に移動させる第１モーターを有する。 A fourth aspect is the substrate processing apparatus according to any one of the first to third aspects, in which the heat treatment section and the prescribed treatment section are arranged apart from each other in the first direction, and the transfer section is provided. Includes a first transfer unit disposed between the heat processing chamber and the specified processing chamber, the first transfer unit including a first substrate holder that holds the substrate, and the first substrate holder. It has a first motor for moving the tool in a first direction.

第５態様は、第４態様の基板処理装置であって、前記搬送部は、前記基板を保持する第２基板保持具を有し、前記基板供給部、前記加熱処理部および前記第１搬送部との間で前記基板を搬送する第２搬送部と、前記基板を保持する第３基板保持具を有し、前記第１搬送部および前記規定処理部との間で前記基板を搬送する第３搬送部とを含む。 A fifth aspect is the substrate processing apparatus of the fourth aspect, wherein the transport unit has a second substrate holder that holds the substrate, and the substrate supply unit, the heat treatment unit, and the first transport unit. A second transfer unit for transferring the substrate to and from the third transfer device, and a third substrate holder for holding the substrate, and a third transfer unit for transferring the substrate between the first transfer unit and the prescribed processing unit. And a transport unit.

第６態様は、第５態様の基板処理装置であって、前記第２搬送部は、前記第２基板保持具を鉛直方向の旋回軸線まわりに旋回させる旋回モーターをさらに有する。 A sixth aspect is the substrate processing apparatus of the fifth aspect, wherein the second transfer unit further includes a turning motor that turns the second substrate holder about a vertical turning axis.

第７態様は、第５態様または第６態様の基板処理装置であって、前記加熱処理部は、鉛直方向に重なる複数の前記加熱処理室を含み、前記規定処理部は、鉛直方向に重なる複数の前記規定処理室を含み、前記第２搬送部および前記第３搬送部の各々は、前記第２基板保持具および前記第３基板保持具の各々を鉛直方向に移動させる移動モーターを有する。 A seventh aspect is the substrate processing apparatus according to the fifth aspect or the sixth aspect, wherein the heat treatment unit includes a plurality of the heat treatment chambers that overlap in the vertical direction, and the prescribed treatment unit includes a plurality of units that overlap in the vertical direction. And the second transfer section and the third transfer section each have a moving motor that moves each of the second substrate holder and the third substrate holder in the vertical direction.

第８態様は、第７態様の基板処理装置であって、前記第２搬送部が前記加熱処理部における最も高い前記加熱処理室に前記基板を搬送するときの前記基板の鉛直位置、および前記第３搬送部が前記規定処理部における最も高い前記規定処理室に前記基板を搬送するときの前記基板の鉛直位置が同一である。 An eighth aspect is the substrate processing apparatus of the seventh aspect, in which the second transfer unit transfers the substrate to the highest heat treatment chamber in the heat treatment unit, the vertical position of the substrate, and 3 The vertical position of the substrate is the same when the transport unit transports the substrate to the highest prescribed processing chamber in the prescribed processing unit.

第９態様は、第５態様から第８態様のいずれか１つの基板処理装置であって、前記基板供給部は、前記収納室よりも前記規定処理部に近い位置に設けられ、前記基板を保持する基板受渡部、を含み、前記第２搬送部は、前記基板受渡部および前記第１搬送部に対して同一の高さで前記基板を搬送する。 A ninth aspect is the substrate processing apparatus according to any one of the fifth to eighth aspects, in which the substrate supply unit is provided at a position closer to the prescribed processing unit than the storage chamber, and holds the substrate. The second transfer unit transfers the substrate at the same height with respect to the substrate transfer unit and the first transfer unit.

第１０態様は、第４態様から第９態様のいずれか１つの基板処理装置であって、前記第１基板保持具よりも上方の位置から下方に向けてエアを供給するエア供給部をさらに備える。 A tenth aspect is the substrate processing apparatus according to any one of the fourth to ninth aspects, further including an air supply unit that supplies air downward from a position above the first substrate holder. ..

第１態様の基板処理装置によると、加熱処理部で加熱処理が完結した基板が、規定処理部とは反対側の基板供給部へ搬送される。このため、加熱処理部で加熱処理された基板が、規定処理部の付近を通らずに基板供給へ搬送される。したがって、規定処理部およびその周辺で発生した異物が、加熱処理部から搬出された基板に付着することを軽減できるため、加熱処理後に搬送される基板の汚染を軽減できる。 According to the substrate processing apparatus of the first aspect, the substrate for which the heat treatment has been completed in the heat treatment unit is transported to the substrate supply unit on the opposite side of the prescribed treatment unit. Therefore, the substrate heat-treated in the heat treatment unit is conveyed to the substrate supply without passing near the prescribed treatment unit. Therefore, foreign substances generated in the prescribed processing unit and its surroundings can be prevented from adhering to the substrate carried out from the heat processing unit, and thus contamination of the substrate transported after the heat processing can be reduced.

第２態様の基板処理装置によると、ノズルから流体を基板に供給することによって、基板を処理できる。 According to the substrate processing apparatus of the second aspect, the substrate can be processed by supplying the fluid to the substrate from the nozzle.

第３態様の基板処理装置によると、ノズルから処理液を基板に供給することによって、基板を処理できる。 According to the substrate processing apparatus of the third aspect, the substrate can be processed by supplying the processing liquid to the substrate from the nozzle.

第４態様の基板処理装置によると、移動搬送部を備えることによって、加熱処理部と規定処理部とを第１方向に離すことができる。このため、規定処理部およびその周辺で発生した異物が、加熱処理部から搬出された基板に付着することを軽減できる。また、加熱処理部の熱が、規定処理部に影響することを低減できる。 According to the substrate processing apparatus of the fourth aspect, by providing the moving/transporting section, the heat processing section and the prescribed processing section can be separated in the first direction. Therefore, it is possible to reduce foreign substances generated in the prescribed processing unit and its surroundings from adhering to the substrate carried out from the heating processing unit. Further, it is possible to reduce the influence of the heat of the heat treatment section on the prescribed treatment section.

第５態様の基板処理装置によると、基板供給部、加熱処理部および第１搬送部間の基板の搬送、並びに第１搬送部および加熱処理部間の基板の搬送を行うことができる。 According to the substrate processing apparatus of the fifth aspect, it is possible to transfer the substrate between the substrate supply unit, the heat processing unit and the first transfer unit, and transfer the substrate between the first transfer unit and the heat processing unit.

第６態様の基板処理装置によると、第２基板保持具を鉛直方向の旋回軸線まわりに旋回させることによって、基板の水平位置を変更できる。このため基板供給部、第１搬送部、および加熱処理部を第２基板搬送部の周囲に配置することによって、これらの間で基板を搬送できる。 According to the substrate processing apparatus of the sixth aspect, the horizontal position of the substrate can be changed by rotating the second substrate holder about the vertical rotation axis. Therefore, by disposing the substrate supply unit, the first transfer unit, and the heat treatment unit around the second substrate transfer unit, the substrate can be transferred between them.

第７態様の基板処理装置によると、各加熱処理室および各規定処理室が鉛直方向に重ねられているため、加熱処理部および規定処理部の占有面積を小さくしつつ、複数の基板を並行に処理できる。また、第２および第３搬送部各々の第２および第３基板保持具が鉛直方向に移動できる。このため、第２および第３搬送部が鉛直方向に積まれた各加熱処理室および各規定処理室に対して基板を搬送できる。 According to the substrate processing apparatus of the seventh aspect, since the heat treatment chambers and the prescribed treatment chambers are vertically stacked, a plurality of substrates are arranged in parallel while the occupation area of the heat treatment unit and the prescribed treatment unit is reduced. It can be processed. Further, the second and third substrate holders of the second and third transfer units can move in the vertical direction. Therefore, the substrate can be transferred to the respective heat processing chambers and the respective predetermined processing chambers in which the second and third transfer units are vertically stacked.

第８態様の基板処理装置によると、第２および第３搬送部は、同一の鉛直位置で最上の加熱処理室および規定処理室の各々に基板を搬送するため、第２および第３搬送部の第２および第３基板保持具を昇降する機構について、共通の構成を採用できる。 According to the substrate processing apparatus of the eighth aspect, since the second and third transfer units transfer the substrate to the uppermost heat processing chamber and the prescribed processing chamber at the same vertical position, the second and third transfer units do not operate. A common structure can be adopted for the mechanism for raising and lowering the second and third substrate holders.

第９態様の基板処理装置によると、基板受渡部と第１搬送部との間で、基板を鉛直方向に移動させず水平移動させることによって基板を搬送できるため、基板を円滑に搬送できる。 According to the substrate processing apparatus of the ninth aspect, the substrate can be transported by moving the substrate horizontally without moving it vertically between the substrate transfer unit and the first transport unit, so that the substrate can be transported smoothly.

第１０態様の基板処理装置によると、第１搬送部において、基板よりも上方から下方にエアの気流が形成される。この気流の作用によって、規定処理部側から加熱処理部側への異物が移動することを低減できる。 According to the substrate processing apparatus of the tenth aspect, an air flow of air is formed above the substrate in the first transfer unit. By the action of this air flow, it is possible to reduce the movement of foreign matter from the prescribed processing unit side to the heating processing unit side.

実施形態の基板処理装置１の全体レイアウトを示す概略平面図である。It is a schematic plan view which shows the whole layout of the substrate processing apparatus 1 of embodiment. 実施形態の基板処理装置１を示す概略側面図である。It is a schematic side view which shows the substrate processing apparatus 1 of embodiment. 実施形態の流体処理室３２を示す概略側面図である。It is a schematic side view which shows the fluid processing chamber 32 of embodiment. 実施形態の加熱処理室４２を示す概略側面図である。It is a schematic side view which shows the heat processing chamber 42 of embodiment. 実施形態のシャトル搬送機構５０を示す概略側面図である。It is a schematic side view which shows the shuttle conveyance mechanism 50 of embodiment. 変形例に係る基板処理装置１Ａの全体レイアウトを示す概略平面図である。It is a schematic plan view which shows the whole layout of the substrate processing apparatus 1A which concerns on a modification. 変形例に係る搬送ロボット６０Ａの概略側面図である。It is a schematic side view of 60 A of conveyance robots which concern on a modification.

以下、添付の図面を参照しながら、本発明の実施形態について説明する。なお、この実施形態に記載されている構成要素はあくまでも例示であり、本発明の範囲をそれらのみに限定する趣旨のものではない。図面においては、理解容易のため、必要に応じて各部の寸法や数が誇張または簡略化して図示されている場合がある。 Embodiments of the present invention will be described below with reference to the accompanying drawings. The constituent elements described in this embodiment are merely examples, and the scope of the present invention is not limited thereto. In the drawings, for ease of understanding, the dimensions and number of each part may be exaggerated or simplified as necessary.

添付の図面では、右手系のＸＹＺ直交座標系の各方向を示す矢印が付されている場合がある。ここでは、Ｘ軸方向およびＹ軸方向を水平方向とし、Ｚ軸方向を鉛直方向とする。各矢印の先端が向く方を＋（プラス）方向とし、その逆方向を−（マイナス）方向とする。 In the accompanying drawings, an arrow may be attached to each direction of the right-handed XYZ rectangular coordinate system. Here, the X axis direction and the Y axis direction are horizontal, and the Z axis direction is the vertical direction. The direction in which the tip of each arrow points is the + (plus) direction, and the opposite direction is the-(minus) direction.

相対的または絶対的な位置関係を示す表現（例えば「一方向に」「一方向に沿って」「平行」「直交」「中心」「同心」「同軸」など）は、特に断らない限り、その位置関係を厳密に表すのみならず、公差もしくは同程度の機能が得られる範囲で相対的に角度または距離に関して変位された状態も表すものとする。等しい状態であることを示す表現（例えば「同一」「等しい」「均質」など）は、特に断らない限り、定量的に厳密に等しい状態を表すのみならず、公差もしくは同程度の機能が得られる差が存在する状態も表すものとする。形状を示す表現（例えば、「四角形状」または「円筒形状」など）は、特に断らない限り、幾何学的に厳密にその形状を表すのみならず、同程度の効果が得られる範囲で、例えば凹凸や面取りなどを有する形状も表すものとする。一の構成要素を「備える」「具える」「具備する」「含む」または「有する」という表現は、他の構成要素の存在を除外する排他的表現ではない。「〜の上」とは、特に断らない限り、２つの要素が接している場合のほか、２つの要素が離れている場合も含む。 Expressions indicating relative or absolute positional relationship (for example, "in one direction", "along one direction", "parallel", "orthogonal", "center", "concentric", "coaxial", etc., are used unless otherwise specified. Not only the positional relationship is strictly represented, but also the relative displacement or relative displacement with respect to an angle or a distance within a range in which a similar function is obtained. Unless otherwise specified, expressions that indicate equal states (for example, “identical”, “equal”, “homogeneous”, etc.) not only represent qualitatively exactly equal states, but also have tolerances or similar functions. The state in which there is a difference shall also be represented. Unless otherwise specified, expressions indicating a shape (for example, “square shape” or “cylindrical shape”) not only represent the shape in a geometrically strict manner, but also within a range in which a similar effect can be obtained, for example. A shape having irregularities or chamfers is also shown. The expressions “comprising”, “comprising”, “comprising”, “including” or “having” one element are not exclusive expressions that exclude the presence of other elements. The term “above” includes not only the case where two elements are in contact with each other but also the case where two elements are apart from each other, unless otherwise specified.

＜１． 実施形態＞
図１は、実施形態の基板処理装置１の全体レイアウトを示す概略平面図である。図２は、実施形態の基板処理装置１を示す概略側面図である。基板処理装置１は、半導体の基板Ｗを１枚ずつ処理する枚葉式の処理装置であり、ここでは、円形のシリコンの基板Ｗに加熱処理以外の処理を実行することが可能な規定処理を行う規定処理、および加熱処理を行う。本例では、規定処理は流体処理である。流体処理は、液体またはガスを基板Ｗに供給して基板Ｗの表面を処理することをいう。 <1. Embodiment>
FIG. 1 is a schematic plan view showing an overall layout of a substrate processing apparatus 1 of the embodiment. FIG. 2 is a schematic side view showing the substrate processing apparatus 1 of the embodiment. The substrate processing apparatus 1 is a single-wafer processing apparatus that processes semiconductor substrates W one by one, and here, a prescribed processing capable of performing processing other than heat processing on a circular silicon substrate W is performed. Perform prescribed treatment and heat treatment. In this example, the prescribed process is a fluid process. The fluid processing means supplying a liquid or gas to the substrate W to process the surface of the substrate W.

基板処理装置１は、インデクサ部ＩＤおよび処理部ＰＵを水平方向であるＸ方向に連結して構成される。本例では、インデクサ部ＩＤは−Ｘ側に配置され、処理部ＰＵは＋Ｘ側に配されている。処理部ＰＵは、＋Ｘ側に配された加熱処理部４０と−Ｘ側に配された流体処理部３０とを含む。加熱処理部４０および流体処理部３０は、Ｘ軸方向に離間して配置されている。 The substrate processing apparatus 1 is configured by connecting the indexer unit ID and the processing unit PU in the horizontal X direction. In this example, the indexer unit ID is arranged on the −X side and the processing unit PU is arranged on the +X side. The processing unit PU includes a heat processing unit 40 arranged on the +X side and a fluid processing unit 30 arranged on the −X side. The heat treatment unit 40 and the fluid treatment unit 30 are arranged separately in the X-axis direction.

基板処理装置１は、シャトル搬送機構５０（第１搬送部）を備える。シャトル搬送機構５０は、処理部ＰＵに設けられており、ここでは、加熱処理部４０よりも＋Ｘ側（流体処理部３０の側）であって、流体処理部３０よりも−Ｘ側（加熱処理部４０の側）に設けられている。 The substrate processing apparatus 1 includes a shuttle transfer mechanism 50 (first transfer unit). The shuttle transport mechanism 50 is provided in the processing unit PU, and here is on the +X side (the fluid processing unit 30 side) of the heat processing unit 40 and on the −X side (the heating process) of the fluid processing unit 30. It is provided on the part 40 side).

基板処理装置１は、基板処理装置１に設けられた要素の動作を制御して、基板Ｗの処理を実現する制御部９０を備える。 The substrate processing apparatus 1 includes a control unit 90 that controls the operations of the elements provided in the substrate processing apparatus 1 to realize the processing of the substrate W.

インデクサ部ＩＤは、複数のキャリアＣ（収納室）を載置する載置台１１、および各キャリアＣに対して基板Ｗを搬送するインデクサロボット１２およびパス部８０を含む。 The indexer unit ID includes a mounting table 11 on which a plurality of carriers C (storage chambers) are mounted, an indexer robot 12 that conveys a substrate W to each carrier C, and a pass unit 80.

載置台１１には、水平方向であるＹ軸方向に沿って複数（ここでは４つ）のキャリアＣを整列状態が載置される。載置台１１に対してはＡＧＶ(automated guided vehicle)等の無人搬送機構によってキャリアＣの搬入および搬出が行われる。キャリアＣは、複数枚の基板Ｗを収納する収納室の一例である。キャリアＣとして、複数枚の基板Ｗを所定間隔の積層状態で密閉空間に収納するＦＯＵＰ（front opening unified pod）が採用されてもよい。なお、キャリアＣとして、ＦＯＵＰのほか、ＳＭＩＦ（Standard Mechanical Inter Face）ポッドや収納された基板Ｗを外気に曝すＯＣ（open cassette）が採用されてもよい。載置台１１に載置されるキャリアＣの数量は、４つに限定されるものではなく、１〜３つ、あるいは５つ以上であってもよい。 On the mounting table 11, a plurality of (here, four) carriers C are mounted in an aligned state along the horizontal Y-axis direction. The carrier C is loaded into and unloaded from the mounting table 11 by an unmanned transport mechanism such as an AGV (automated guided vehicle). The carrier C is an example of a storage chamber that stores a plurality of substrates W. As the carrier C, a FOUP (front opening unified pod) that stores a plurality of substrates W in a closed space in a stacked state at predetermined intervals may be adopted. As the carrier C, in addition to FOUP, an SMIF (Standard Mechanical Inter Face) pod or an OC (open cassette) that exposes the accommodated substrate W to the outside air may be adopted. The number of carriers C mounted on the mounting table 11 is not limited to four, and may be one to three, or five or more.

インデクサロボット１２は、未処理の基板Ｗを各キャリアＣから搬出して処理部ＰＵに渡すとともに、処理が完了した処理済の基板Ｗを処理部ＰＵから受け取って各キャリアＣに搬入する。インデクサロボット１２は、Ｙ軸方向に沿って形成された搬送路１０を走行するとともに、各キャリアＣとパス部８０との間で基板Ｗを搬送する。 The indexer robot 12 carries out the unprocessed substrate W from each carrier C and transfers it to the processing unit PU, and receives the processed substrate W which has been processed from the processing unit PU and carries it into each carrier C. The indexer robot 12 travels along the transport path 10 formed along the Y-axis direction and transports the substrate W between each carrier C and the pass portion 80.

インデクサロボット１２は、２つのアーム１３ａ，１３ｂを独立して駆動することができるいわゆるダブルアーム型の搬送ロボットである。各アーム１３ａ，１３ｂの先端には、鉛直方向に位置をずらされたハンド１４ａおよびハンド１４ｂがそれぞれ結合されている。ハンド１４ｂは、ハンド１４ａの−Ｚ側に設けられている。ハンド１４ａおよびハンド１４ｂは、それぞれ１枚の基板Ｗを水平姿勢で保持する。 The indexer robot 12 is a so-called double arm type transfer robot capable of independently driving the two arms 13a and 13b. Hands 14a and 14b, which are vertically displaced from each other, are coupled to the ends of the arms 13a and 13b, respectively. The hand 14b is provided on the −Z side of the hand 14a. The hand 14a and the hand 14b each hold one substrate W in a horizontal posture.

インデクサロボット１２は、アーム１３ａ，１３ｂを独立して駆動することによって、ハンド１４ａおよびハンド１４ｂを個別に水平方向へ進退移動させるモーターを含む進退駆動機構１５を備えている。また、インデクサロボット１２は、アーム１３ａ，１３ｂをＺ軸方向に平行な鉛直軸線まわりに旋回させる旋回モーターを含む旋回駆動機構、アーム１３ａ，１３ｂを鉛直方向に昇降させる昇降モーターを含む昇降駆動機構、および、インデクサロボット１２全体を搬送路１０に沿って水平移動させる移動モーターを含むスライド駆動機構（いずれも図示省略）を備える。インデクサロボット１２は、各モーターの作用によりハンド１４ａおよびハンド１４ｂを個別に載置台１１の各キャリアＣの内部に進入させることによって、未処理の基板Ｗの取り出し、および処理済の基板Ｗの格納を行う。また、インデクサロボット１２は、ハンド１４ａおよびハンド１４ｂを個別にパス部８０の内部に進入させることによって、未処理の基板Ｗの引き渡し、および処理済の基板Ｗの受け取りを行う。 The indexer robot 12 includes an advancing/retreating drive mechanism 15 including a motor that moves the hands 14a and 14b individually in the horizontal direction by independently driving the arms 13a and 13b. Further, the indexer robot 12 includes a swing drive mechanism including a swing motor that swings the arms 13a and 13b around a vertical axis parallel to the Z-axis direction, and a lift drive mechanism including a lift motor that vertically moves the arms 13a and 13b. Further, a slide drive mechanism (all not shown) including a moving motor for horizontally moving the entire indexer robot 12 along the transport path 10 is provided. The indexer robot 12 causes the hands 14a and 14b to individually enter the inside of each carrier C of the mounting table 11 by the action of each motor, thereby taking out the unprocessed substrate W and storing the processed substrate W. To do. In addition, the indexer robot 12 transfers the unprocessed substrate W and receives the processed substrate W by individually inserting the hand 14a and the hand 14b into the pass unit 80.

パス部８０は、インデクサ部ＩＤよりも＋Ｘ側（すなわち、流体処理部３０を含む処理部ＰＵに近い側）に設けられている。本例では、パス部８０は、インデクサロボット１２と第１搬送ロボット６０との間に設けられている。後述するように、インデクサロボット１２からパス部８０に渡された未処理の基板Ｗは、第１搬送ロボット６０によって流体処理部３０に搬送される。インデクサ部ＩＤおよびパス部８０は、キャリアＣに収納された基板Ｗを流体処理部３０に供給する基板供給部の一例である。 The pass unit 80 is provided on the +X side of the indexer unit ID (that is, on the side closer to the processing unit PU including the fluid processing unit 30). In this example, the pass unit 80 is provided between the indexer robot 12 and the first transfer robot 60. As will be described later, the unprocessed substrate W passed from the indexer robot 12 to the path unit 80 is transferred to the fluid processing unit 30 by the first transfer robot 60. The indexer unit ID and pass unit 80 is an example of a substrate supply unit that supplies the substrate W housed in the carrier C to the fluid processing unit 30.

処理部ＰＵは、シャトル搬送機構５０のほか、第１搬送ロボット６０および第２搬送ロボット７０を備える。 The processing unit PU includes a shuttle transfer mechanism 50, a first transfer robot 60, and a second transfer robot 70.

第１搬送ロボット６０は、パス部８０とシャトル搬送機構５０との間に配置されている。第１搬送ロボット６０は、＋Ｙ側および−Ｙ側に配置された加熱処理タワー４１の間に設けられている。加熱処理タワー４１は、鉛直方向に積み重ねられた複数（本例では５つ）の加熱処理室４２で構成される。また、本例では、パス部８０は２つの加熱処理タワー４１の間に設けられている。複数の加熱処理室４２を積み重ねて加熱処理タワー４１を形成することにより、加熱処理部４０の専有面積を小さくしつつ、複数の基板Ｗを並行に加熱処理できる。 The first transfer robot 60 is arranged between the path unit 80 and the shuttle transfer mechanism 50. The first transfer robot 60 is provided between the heat treatment towers 41 arranged on the +Y side and the −Y side. The heat treatment tower 41 is composed of a plurality (five in this example) of heat treatment chambers 42 stacked vertically. Further, in this example, the pass portion 80 is provided between the two heat treatment towers 41. By stacking the plurality of heat treatment chambers 42 to form the heat treatment tower 41, the plurality of substrates W can be heat-treated in parallel while reducing the area occupied by the heat treatment unit 40.

第２搬送ロボット７０は、流体処理部３０の水平方向中央部に中央に設置されている。ここでは、流体処理部３０が備える４つの流体処理タワー３１の中央に設けられている。流体処理タワー３１は、鉛直方向に積み重ねられた複数（本例では３つ）の流体処理室３２で構成されている。４つの流体処理タワー３１のうち、２つは流体処理部３０の＋Ｙ側にてＸ軸方向に配列されており、残りの２つは流体処理部３０の−Ｙ側にてＸ軸方向に配列されている。複数の流体処理室３２を積み重ねて流体処理タワー３１を形成することにより、流体処理部３０の専有面積を小さくしつつ、複数の基板Ｗを並行に加熱処理できる。 The second transfer robot 70 is centrally installed in the horizontal center of the fluid processing unit 30. Here, it is provided at the center of the four fluid treatment towers 31 included in the fluid treatment unit 30. The fluid processing tower 31 is composed of a plurality (three in this example) of fluid processing chambers 32 that are vertically stacked. Of the four fluid treatment towers 31, two are arranged in the X-axis direction on the +Y side of the fluid treatment unit 30, and the remaining two are arranged in the X-axis direction on the -Y side of the fluid treatment unit 30. Has been done. By stacking the plurality of fluid processing chambers 32 to form the fluid processing tower 31, it is possible to heat-treat the plurality of substrates W in parallel while reducing the area occupied by the fluid processing unit 30.

第２搬送ロボット７０は、第１搬送ロボット６０と同一の構成を備えているため、ここでは第１搬送ロボット６０の構成について説明する。ただし、第２搬送ロボット７０が第１搬送ロボット６０と同一の構成を備えることは必須ではない。 Since the second transfer robot 70 has the same configuration as the first transfer robot 60, the configuration of the first transfer robot 60 will be described here. However, it is not essential that the second transfer robot 70 has the same configuration as the first transfer robot 60.

第１搬送ロボット６０は、鉛直方向に位置をずらして配置された２つのハンド６１ａ，６１ｂを備える。第１搬送ロボット６０は、ハンド６１ａ，６１ｂを鉛直方向に沿った旋回軸線まわりに旋回させる旋回モーターを含む旋回駆動機構６２、およびハンド６１ａおよびハンド６１ｂを鉛直方向に昇降させる昇降モーターを含む昇降駆動機構６３を備える。さらに、第１搬送ロボット６０は、ハンド６１ａ，６１ｂを上記旋回軸線に直交する旋回半径方向（旋回軸線に直交する水平方向）に沿って独立して進退移動させるモーターを含む進退駆動機構６４を備えている。進退駆動機構６４は、例えば多関節アームで構成されており、モーターが関節を屈曲させることによって、先端のハンド６１ａ，６１ｂを水平方向に進退させる。なお、進退駆動機構６４は、ボールネジ、リニアモーターまたはシリンダなどの直動駆動機構を備えていてもよい。 The first transfer robot 60 includes two hands 61a and 61b that are vertically displaced from each other. The first transfer robot 60 includes a swing drive mechanism 62 including a swing motor that swings the hands 61a and 61b around a swing axis along the vertical direction, and a lift drive including a lift motor that lifts and lowers the hands 61a and 61b in the vertical direction. The mechanism 63 is provided. Further, the first transfer robot 60 is provided with an advancing/retreating drive mechanism 64 including a motor for independently advancing/retreating the hands 61a, 61b along a turning radius direction orthogonal to the turning axis (horizontal direction orthogonal to the turning axis). ing. The advancing/retreating drive mechanism 64 is composed of, for example, a multi-joint arm, and the motor bends the joint to move the hands 61a, 61b at the tip end forward/backward. The advance/retreat drive mechanism 64 may include a direct drive mechanism such as a ball screw, a linear motor, or a cylinder.

第１搬送ロボット６０は、各駆動機構で各ハンド６１ａ，６１ｂを個別にパス部８０、各加熱処理室４２およびシャトル搬送機構５０に進入させて、基板Ｗの搬送を行う。例えば、第１搬送ロボット６０は、パス部８０に進入してパス部８０から未処理の基板Ｗを受け取った後、１８０度旋回してシャトル搬送機構５０（詳細には、第１授受位置Ｌ５１）のシャトル本体部５１に基板Ｗを渡す。また、第１搬送ロボット６０は、シャトル搬送機構５０（詳細には、第１授受位置Ｌ５１）のシャトル本体部５１から流体処理済の基板Ｗを受け取った後、空いている加熱処理室４２に基板Ｗを搬入する。また、第１搬送ロボット６０は、加熱処理が完了した加熱処理室４２から基板Ｗを取り出した後、所定の角度分だけ旋回してパス部８０に正対し、基板Ｗをパス部８０に渡す。 The first transfer robot 60 transfers the substrates W by individually moving the hands 61a and 61b into the pass unit 80, the heat processing chambers 42, and the shuttle transfer mechanism 50 by each drive mechanism. For example, the first transfer robot 60 enters the pass unit 80 and receives the unprocessed substrate W from the pass unit 80, and then turns 180 degrees to move the shuttle transfer mechanism 50 (specifically, the first transfer position L51). The substrate W is handed over to the shuttle main body 51. In addition, the first transfer robot 60 receives the fluid-processed substrate W from the shuttle main body 51 of the shuttle transfer mechanism 50 (specifically, the first transfer position L51), and then transfers the substrate to the vacant heat processing chamber 42. Bring in W. In addition, the first transfer robot 60 takes out the substrate W from the heat treatment chamber 42 in which the heat treatment has been completed, then swivels by a predetermined angle to face the pass portion 80 and passes the substrate W to the pass portion 80.

第２搬送ロボット７０は、各駆動機構で各ハンド６１ａ，６１ｂを個別にシャトル搬送機構５０および各流体処理室３２に進入させて、基板Ｗの搬送を行う。例えば、第２搬送ロボット７０は、シャトル搬送機構５０（詳細には、第２授受位置Ｌ５２）のシャトル本体部５１から未処理の基板Ｗを受け取った後、空いている流体処理室３２に基板Ｗを搬入する。また、第２搬送ロボット７０は、流体処理が完了した流体処理室３２から基板Ｗを受け取った後、当該基板Ｗをシャトル搬送機構５０（詳細には、第２授受位置Ｌ５２）のシャトル本体部５１に渡す。 The second transfer robot 70 transfers the substrate W by causing the respective hands 61a and 61b to individually enter the shuttle transfer mechanism 50 and the fluid processing chambers 32 by the respective drive mechanisms. For example, the second transfer robot 70 receives the unprocessed substrate W from the shuttle body 51 of the shuttle transfer mechanism 50 (specifically, the second transfer position L52), and then transfers the substrate W to the vacant fluid processing chamber 32. Bring in. In addition, the second transfer robot 70 receives the substrate W from the fluid processing chamber 32 in which the fluid processing is completed, and then transfers the substrate W to the shuttle main body 51 of the shuttle transfer mechanism 50 (specifically, the second transfer position L52). To pass.

搬送ロボット６０，７０は、各々のハンド６１ａ，６１ｂを鉛直方向に昇降させることによって、鉛直方向に積まれた複数の加熱処理室４２または複数の流体処理室３２のうちの１つに対して、基板Ｗを搬送できる。 The transfer robots 60, 70 move one of the hands 61a, 61b up and down in the vertical direction so that one of the plurality of heat processing chambers 42 or the plurality of fluid processing chambers 32 stacked in the vertical direction, The substrate W can be transported.

基板処理装置１においては、シャトル搬送機構５０、搬送ロボット６０，７０が、基板供給部（インデクサ部ＩＤおよびパス部８０）から供給された基板Ｗを、順に、流体処理部３０、加熱処理部４０に搬送し、その後再び基板供給部に戻す。シャトル搬送機構５０、搬送ロボット６０，７０は、搬送部の一例である。 In the substrate processing apparatus 1, the shuttle transfer mechanism 50 and the transfer robots 60 and 70 sequentially supply the substrates W supplied from the substrate supply unit (indexer unit ID and pass unit 80) to the fluid processing unit 30 and the heat processing unit 40, respectively. To the substrate supply section again. The shuttle transfer mechanism 50 and the transfer robots 60 and 70 are examples of a transfer unit.

図２に示すように、流体処理部３０において最も高い位置にある流体処理室３２のシャッター３３と、加熱処理部４０において最も高い位置にある加熱処理室４２のシャッター４３とは、同一の高さ（鉛直位置）にある。このため、第１搬送ロボット６０が最上の加熱処理室４２に基板Ｗを搬送するときの基板Ｗの鉛直位置と、第２搬送ロボット７０が最上の流体処理室３２に基板Ｗを搬送するときの基板Ｗの鉛直位置とが同一である。このように、搬送ロボット６０，７０は、同一の鉛直位置で加熱処理室４２および流体処理室３２の各々に基板Ｗを搬送するため、各々のハンド６１ａ，６１ｂ（第２および第３基板保持具）を昇降させるために共通の昇降駆動機構６３を採用できる。このように搬送ロボット６０，７０について、構成の共通化を図ることによって、基板処理装置１の製造コストを軽減できる。 As shown in FIG. 2, the shutter 33 of the fluid treatment chamber 32 at the highest position in the fluid treatment unit 30 and the shutter 43 of the heat treatment chamber 42 at the highest position in the heat treatment unit 40 have the same height. (Vertical position). Therefore, the vertical position of the substrate W when the first transfer robot 60 transfers the substrate W to the uppermost heat treatment chamber 42, and when the second transfer robot 70 transfers the substrate W to the uppermost fluid processing chamber 32. The vertical position of the substrate W is the same. In this way, the transfer robots 60 and 70 transfer the substrates W to the heat processing chamber 42 and the fluid processing chamber 32 at the same vertical position, so that the respective hands 61a and 61b (second and third substrate holders) are transferred. A common lifting drive mechanism 63 can be employed for lifting and lowering. In this way, the manufacturing cost of the substrate processing apparatus 1 can be reduced by sharing the configuration of the transfer robots 60 and 70.

搬送ロボット６０，７０は、その基台部６５が処理部ＰＵに対して固定されており、処理部ＰＵ内で水平方向に沿って移動するものではない。ただし、搬送ロボット６０，７０が、移動モーターを含む水平移動機構を備えることによって、水平方向に移動してもよい。 The base parts 65 of the transfer robots 60 and 70 are fixed to the processing unit PU, and do not move in the processing unit PU in the horizontal direction. However, the transfer robots 60 and 70 may be moved in the horizontal direction by including a horizontal movement mechanism including a movement motor.

図３は、実施形態の流体処理室３２を示す概略側面図である。流体処理室３２においては、基板Ｗに処理液を用いた表面処理が行われる。「処理液」とは、基板Ｗの表面を処理する液の総称であり、薬液およびリンス液の双方を含む。薬液には、例えば、フッ酸、アンモニア過酸化水素水（ＳＣ−１）、塩酸過酸化水素水（ＳＣ−２）、硫酸過酸化水素水（ＳＰＭ）などが含まれる。流体処理室３２で行われる流体処理は、フッ酸を用いて基板Ｗの表面に形成された不要な膜を除去するエッチング処理、ＳＣ−１で基板Ｗの表面からパーティクルを除去する処理、ＳＣ−２で基板Ｗの金属汚染を取り除く処理、あるいは、ＳＰＭで基板Ｗの表面のレジストを除去する処理としてもよい。また、流体処理室３２で行われる処理は、リンス液である純水で基板Ｗの表面を洗浄する処理としてもよい。 FIG. 3 is a schematic side view showing the fluid processing chamber 32 of the embodiment. In the fluid processing chamber 32, the surface treatment using the treatment liquid is performed on the substrate W. The “treatment liquid” is a general term for liquids that treat the surface of the substrate W, and includes both a chemical liquid and a rinse liquid. The chemical solution includes, for example, hydrofluoric acid, ammonia hydrogen peroxide solution (SC-1), hydrochloric acid hydrogen peroxide solution (SC-2), sulfuric acid hydrogen peroxide solution (SPM), and the like. The fluid treatment performed in the fluid treatment chamber 32 is an etching treatment for removing an unnecessary film formed on the surface of the substrate W using hydrofluoric acid, a treatment for removing particles from the surface of the substrate W in SC-1, and a SC- The process of removing metal contamination of the substrate W in 2 or the process of removing the resist on the surface of the substrate W by SPM may be performed. The process performed in the fluid processing chamber 32 may be a process of cleaning the surface of the substrate W with pure water that is a rinse liquid.

流体処理室３２の側壁面の一部には、流体処理室３２に対して基板Ｗを搬出入するための開口部が設けられており、当該開口部はシャッター３３によって開閉される。シャッター３３は、図示しないモーターによって開閉する。シャッター３３が開いているときには、第２搬送ロボット７０が開口部を介して流体処理室３２に基板Ｗを搬入するとともに流体処理室３２から基板Ｗを搬出する。シャッター３３が閉じているときには、流体処理室３２の内部は実質的に密閉空間とされ、流体処理室３２の内部の雰囲気が外側（第２搬送ロボット７０が配置されている空間側）に漏洩することが抑制される。 An opening for loading/unloading the substrate W into/from the fluid processing chamber 32 is provided in a part of a side wall surface of the fluid processing chamber 32, and the opening is opened and closed by a shutter 33. The shutter 33 is opened and closed by a motor (not shown). When the shutter 33 is open, the second transfer robot 70 carries the substrate W into the fluid processing chamber 32 through the opening and carries the substrate W out of the fluid processing chamber 32. When the shutter 33 is closed, the inside of the fluid processing chamber 32 is substantially a closed space, and the atmosphere inside the fluid processing chamber 32 leaks to the outside (the space side where the second transfer robot 70 is arranged). Is suppressed.

流体処理室３２の内部には、基板Ｗを水平姿勢で保持するとともに、その中心を通る鉛直方向に沿った中心軸まわりに基板Ｗを回転させる回転保持部３４が設けられている。回転保持部３４は、スピンチャック３５、回転軸３６および回転モーター３７を備える。スピンチャック３５は、チャックピンによって基板Ｗの端縁部を把持することにより、基板Ｗの下面中央部に接触することなく基板Ｗをほぼ水平姿勢にて保持する基板保持具である。回転軸３６は、スピンチャック３５の下面側中心部に垂設されている。回転モーター３７は、回転軸３６を介してスピンチャック３５を水平面内で回転させる。スピンチャック３５に保持された基板Ｗは、スピンチャック３５および回転軸３６とともに、水平面内にて鉛直方向に沿った中心軸線まわりで回転する。 Inside the fluid processing chamber 32, a rotation holding unit 34 that holds the substrate W in a horizontal posture and rotates the substrate W around a central axis along a vertical direction passing through the center thereof is provided. The rotation holding unit 34 includes a spin chuck 35, a rotation shaft 36, and a rotation motor 37. The spin chuck 35 is a substrate holder that holds the substrate W in a substantially horizontal posture without contacting the central portion of the lower surface of the substrate W by holding the edge portion of the substrate W with chuck pins. The rotating shaft 36 is vertically provided at the center of the lower surface side of the spin chuck 35. The rotation motor 37 rotates the spin chuck 35 in a horizontal plane via the rotation shaft 36. The substrate W held by the spin chuck 35 rotates together with the spin chuck 35 and the rotating shaft 36 about a central axis line along the vertical direction in a horizontal plane.

流体処理室３２の内部には、回転保持部３４のスピンチャック３５を取り囲む処理カップ３８が設けられている。基板Ｗが回転することによって、基板Ｗの上面から外方へ振り切られた処理液は、処理カップ３８の内面で受け止められ、適宜排出ポートから流体処理室３２の外へ排出される。処理カップ３８は、不図示の昇降モーターを含む昇降機構によって、鉛直方向に昇降する。 Inside the fluid processing chamber 32, a processing cup 38 that surrounds the spin chuck 35 of the rotation holding unit 34 is provided. When the substrate W rotates, the processing liquid shaken off from the upper surface of the substrate W is received by the inner surface of the processing cup 38, and is appropriately discharged to the outside of the fluid processing chamber 32 from the discharge port. The processing cup 38 is vertically moved by an elevating mechanism including an elevating motor (not shown).

流体処理室３２の内部には、ノズル３９が設けられている。ノズル３９は、流体処理室３２に併設された流体ボックス３２Ｂから処理液が供給される。ノズル３９は、下方に設けられた吐出口から基板Ｗに向けて処理液を吐出する。これにより、基板Ｗの上面に処理液が供給される。流体ボックス３２Ｂには、ノズル３９に処理液を供給するための配管や配管に介装されたバルブなどの複数の流体機器が収容されている。ノズル３９は、基板Ｗに対して処理を行う処理ツールの一例である。 A nozzle 39 is provided inside the fluid processing chamber 32. The processing liquid is supplied to the nozzle 39 from a fluid box 32B provided in the fluid processing chamber 32. The nozzle 39 discharges the processing liquid toward the substrate W from the discharge port provided below. As a result, the processing liquid is supplied to the upper surface of the substrate W. The fluid box 32B accommodates a plurality of fluid devices such as a pipe for supplying the processing liquid to the nozzle 39 and a valve interposed in the pipe. The nozzle 39 is an example of a processing tool that processes the substrate W.

なお、スピンチャック３５に保持された基板Ｗの裏面に処理液を供給するノズルが設けられてもよい。この場合、例えば回転軸３６を中空に、当該空間内に処理液の流路と、当該流路に接続されてスピンチャック３５の中心部において上側へ開口するノズルを設けてもよい。当該ノズルから処理液を吐出することによって、基板Ｗの裏面側の中心部に処理液を供給できる。 A nozzle for supplying the processing liquid may be provided on the back surface of the substrate W held by the spin chuck 35. In this case, for example, the rotating shaft 36 may be hollow, and a flow path for the processing liquid may be provided in the space, and a nozzle that is connected to the flow path and that opens upward in the central portion of the spin chuck 35 may be provided. By discharging the processing liquid from the nozzle, the processing liquid can be supplied to the central portion on the back surface side of the substrate W.

ノズル３９は、不図示のノズルアームに取り付けられる。ノズルアームはモーターに接続されており、モーターの作動によって、水平方向に移動することができる。ノズル３９は、このノズルアームの水平移動によって、スピンチャック３５に保持された基板Ｗの上方の位置と、その基板Ｗの上方から外れた位置との間で移動できる。 The nozzle 39 is attached to a nozzle arm (not shown). The nozzle arm is connected to the motor and can be moved in the horizontal direction by the operation of the motor. The horizontal movement of the nozzle arm allows the nozzle 39 to move between a position above the substrate W held by the spin chuck 35 and a position deviated from above the substrate W.

本例では、流体処理室３２において、処理液で基板Ｗを液処理している。しかしながら、流体処理室３２において液処理することは必須ではない。例えば、流体処理室３２において、基板Ｗの表面を所定の処理ガスに暴露させるドライ処理が行われてもよい。 In this example, the substrate W is liquid-processed with the processing liquid in the fluid processing chamber 32. However, liquid processing in the fluid processing chamber 32 is not essential. For example, in the fluid processing chamber 32, a dry process of exposing the surface of the substrate W to a predetermined process gas may be performed.

図４は、実施形態の加熱処理室４２を示す概略側面図である。加熱処理室４２の側壁面の一部には、加熱処理室４２に対して基板Ｗを搬出入するための開口部が設けられており、当該開口部はシャッター４３によって開閉される。シャッター４３は、図示しないモーターによって開閉する。シャッター４３が開いているときには、第１搬送ロボット６０が開口部を介して加熱処理室４２に基板Ｗを搬入するとともに加熱処理室４２から基板Ｗを搬出する。シャッター４３が閉じているときには、加熱処理室４２の内部は実質的に密閉空間とされ、加熱処理室４２の内部の雰囲気が外側（第１搬送ロボット６０が配置されている空間の側）に漏洩することが抑制される。 FIG. 4 is a schematic side view showing the heat treatment chamber 42 of the embodiment. An opening for loading/unloading the substrate W to/from the heat treatment chamber 42 is provided in a part of the side wall surface of the heat treatment chamber 42, and the opening is opened and closed by a shutter 43. The shutter 43 is opened and closed by a motor (not shown). When the shutter 43 is open, the first transfer robot 60 carries the substrate W into the heat treatment chamber 42 through the opening and carries the substrate W out of the heat treatment chamber 42. When the shutter 43 is closed, the inside of the heat treatment chamber 42 is substantially a closed space, and the atmosphere inside the heat treatment chamber 42 leaks to the outside (the side of the space where the first transfer robot 60 is arranged). Is suppressed.

加熱処理室４２は、基板Ｗを内部に収容して当該基板Ｗを加熱する。加熱処理室４２の内部には、基板Ｗを水平姿勢で支持するステージ４４が設けられている。ステージ４４は、基板保持具の一例である。ステージ４４の内部には、ヒーター４５が設けられている。ヒーター４５は、抵抗線、および当該抵抗線に電圧を印加する電源などを含む。ここでは、ステージ４４の内部に抵抗線が設けられており、当該抵抗線に電圧が印加されることによって、ステージ４４の上面に輻射熱が放射される。この輻射熱によって、ステージ４４に支持された基板Ｗが加熱される。なお、加熱処理室４２において、基板Ｗを加熱する機構は図示の例に限定されるものではない。例えば、加熱処理室４２の内部に、熱源によって加熱された熱風を噴出するファンヒーターを設けて、当該熱風によって基板Ｗを直接または間接的に加熱してもよい。 The heat treatment chamber 42 accommodates the substrate W therein and heats the substrate W. A stage 44 that supports the substrate W in a horizontal posture is provided inside the heat treatment chamber 42. The stage 44 is an example of a substrate holder. A heater 45 is provided inside the stage 44. The heater 45 includes a resistance wire and a power supply that applies a voltage to the resistance wire. Here, a resistance wire is provided inside the stage 44, and when a voltage is applied to the resistance wire, radiant heat is radiated to the upper surface of the stage 44. The substrate W supported by the stage 44 is heated by this radiant heat. The mechanism for heating the substrate W in the heat treatment chamber 42 is not limited to the illustrated example. For example, a fan heater that ejects hot air heated by a heat source may be provided inside the heat treatment chamber 42 to heat the substrate W directly or indirectly by the hot air.

図５は、実施形態のシャトル搬送機構５０を示す概略側面図である。シャトル搬送機構５０は、Ｘ軸方向に延びるとともにＹ軸方向に間隔をあけて配置された２つのレール５０１、各レール５０１に連結されているシャトル本体部５１、各レール５０１上に沿ってシャトル本体部５１を往復移動させる直動モーター５３（第１モーター）を有する。 FIG. 5 is a schematic side view showing the shuttle transport mechanism 50 of the embodiment. The shuttle transport mechanism 50 includes two rails 501 extending in the X-axis direction and spaced apart in the Y-axis direction, a shuttle main body 51 connected to each rail 501, and a shuttle main body along each rail 501. It has a linear motor 53 (first motor) that reciprocates the portion 51.

シャトル本体部５１の上面には、２つの基板保持具５２ａ，５２ｂが設けられている。基板保持具５２ａ，５２ｂは、Ｘ軸方向にずれた位置に設けられている。具体的には、基板保持具５２ａはシャトル本体部５１の−Ｘ側寄りの位置に、基板保持具５２ｂはシャトル本体部５１の＋Ｘ側寄りの位置に設けられている。基板保持具５２ａ，５２ｂは、それぞれ、Ｙ軸方向に間隔をあけて設けられた一対のハンド５２１を有する。一対のハンド５２１は、内側に凹む円弧状の内面を有しており、その内面どうしがＹ軸方向に対向する向きでシャトル本体部５１に取り付けられている。図１に示すように、各ハンド５２１の内面には、内方に向けて突出する２つの支持爪５４が設けられている。基板保持具５２ａ，５２ｂは、複数の支持爪５４で基板Ｗを下方から支持することによって、基板Ｗを略水平姿勢に支持する。なお、ハンド５２１に複数の支持爪５４を設ける代わりに、基板Ｗの周縁部に沿う形状の鍔部を設けてもよい。 Two substrate holders 52a and 52b are provided on the upper surface of the shuttle body 51. The substrate holders 52a and 52b are provided at positions displaced in the X-axis direction. Specifically, the substrate holder 52a is provided at a position closer to the −X side of the shuttle body 51, and the substrate holder 52b is provided at a position closer to the +X side of the shuttle body 51. The substrate holders 52a and 52b each have a pair of hands 521 provided at intervals in the Y-axis direction. The pair of hands 521 each have an arcuate inner surface that is recessed inward, and are attached to the shuttle body 51 so that the inner surfaces face each other in the Y-axis direction. As shown in FIG. 1, the inner surface of each hand 521 is provided with two support claws 54 that project inward. The substrate holders 52a and 52b support the substrate W in a substantially horizontal posture by supporting the substrate W from below with a plurality of support claws 54. Note that, instead of providing the plurality of support claws 54 on the hand 521, a flange portion having a shape along the peripheral edge of the substrate W may be provided.

シャトル本体部５１は、基板保持具５２ａを鉛直方向に昇降させる昇降機構５５ａおよび基板保持具５２ｂを鉛直方向に昇降させる昇降機構５５ｂを備える。基板保持具５２ａ，５２ｂは、昇降機構５５ａ，５５ｂによって独立に昇降できる。昇降機構５５ａは各基板保持具５２ａの一対のハンド５２１を一体的に同じ高さで昇降させ、昇降機構５５ｂは基板保持具５２ｂの一対のハンド５２１を一体的に同じ高さで昇降させる。基板保持具５２ａ，５２ｂが異なる高さに配置されることによって、各基板保持具５２ａ，５２ｂは基板Ｗをシャトル本体部５１は２つの基板Ｗを同時に搬送できる。 The shuttle body 51 includes an elevating mechanism 55a for vertically moving the substrate holder 52a and an elevating mechanism 55b for vertically moving the substrate holder 52b. The substrate holders 52a and 52b can be independently raised and lowered by the raising and lowering mechanisms 55a and 55b. The elevating mechanism 55a integrally moves the pair of hands 521 of each substrate holder 52a up and down at the same height, and the elevating mechanism 55b integrally moves the pair of hands 521 of the substrate holder 52b at the same height. By arranging the substrate holders 52a and 52b at different heights, the substrate holders 52a and 52b can convey the substrate W and the shuttle body 51 can convey the two substrates W at the same time.

シャトル本体部５１の底面には、レール５０１を摺動自在に移動することが可能な摺動ブロック５６が取り付けられている。シャトル本体部５１は、直動モーター５３によって、各レール５０１上を摺動自在に案内されつつ、第１授受位置Ｌ５１および第２授受位置Ｌ５２との間で往復移動される。 A sliding block 56 capable of slidably moving the rail 501 is attached to the bottom surface of the shuttle body 51. The shuttle main body 51 is reciprocally moved between the first transfer position L51 and the second transfer position L52 while being slidably guided by the linear motor 53 on each rail 501.

第１授受位置Ｌ５１は、シャトル搬送機構５０における−Ｘ側寄りの位置である。シャトル本体部５１が第１授受位置Ｌ５１にあるとき、第１搬送ロボット６０とシャトル搬送機構５０との間で基板Ｗの授受が行われる。具体的には、ハンド６１ａと基板保持具５２ａとの間、ハンド６１ｂと基板保持具５２ｂとの間で基板Ｗの授受が行われる。この際、各ハンド６１ａ，６１ｂが基板保持具５２ａまたは基板保持具５２ｂに対応する水平位置まで進出し、基板保持具５２ａ，５２ｂが上昇または下降することによって、基板Ｗの授受が行われる。 The first transfer position L51 is a position on the −X side of the shuttle transport mechanism 50. When the shuttle main body 51 is at the first transfer position L51, the transfer of the substrate W is performed between the first transfer robot 60 and the shuttle transfer mechanism 50. Specifically, the substrate W is transferred between the hand 61a and the substrate holder 52a and between the hand 61b and the substrate holder 52b. At this time, each hand 61a, 61b advances to a horizontal position corresponding to the substrate holder 52a or the substrate holder 52b, and the substrate holders 52a, 52b move up or down to transfer the substrate W.

第２授受位置Ｌ５２は、シャトル搬送機構５０における＋Ｘ側寄りの位置である。シャトル本体部５１が第２授受位置Ｌ５２にあるとき、第２搬送ロボット７０とシャトル搬送機構５０との間で基板Ｗの授受が行われる。具体的には、ハンド６１ａと基板保持具５２ａとの間、ハンド６１ｂと基板保持具５２ｂとの間で基板Ｗの授受が行われる。この際、各ハンド６１ａ，６１ｂが基板保持具５２ａまたは基板保持具５２ｂに対応する水平位置まで進出し、基板保持具５２ａ，５２ｂが上昇または下降することによって、基板Ｗの授受が行われる。 The second transfer position L52 is a position closer to the +X side in the shuttle transport mechanism 50. When the shuttle main body 51 is in the second transfer position L52, the transfer of the substrate W is performed between the second transfer robot 70 and the shuttle transfer mechanism 50. Specifically, the substrate W is transferred between the hand 61a and the substrate holder 52a and between the hand 61b and the substrate holder 52b. At this time, each hand 61a, 61b advances to a horizontal position corresponding to the substrate holder 52a or the substrate holder 52b, and the substrate holders 52a, 52b move up or down to transfer the substrate W.

シャトル搬送機構５０は、エア供給ヘッド５７を備えている。エア供給ヘッド５７は、第２授受位置Ｌ５２にあるシャトル本体部５１よりも上方の位置に設けられている。エア供給ヘッド５７は、下面に複数の吐出孔を備えるとともに、バルブ５７１を介してエア供給源５７２に接続されている。バルブ５７１が開放されることによって、エア供給ヘッド５７の各吐出孔から下方に向けてエアが噴出される。これによって、シャトル搬送機構５０の搬送室５００の内部にダウンフローの気流が形成される。このように、搬送室５００の内部にダウンフローが形成されることによって、例えば、流体処理部３０において発生した異物が、シャトル搬送機構５０を通過して加熱処理部４０側に移動することを低減できる。なお、エア供給源５７２は、例えば基板Ｗの表面に対して不活性な不活性ガスである窒素ガス（Ｎ２）を供給する供給源としてもよい。これにより、窒素ガスのダウンフローを形成できる。また、エア供給ヘッド５７として、基板Ｗの表面と反応し得る処理用ガス（オゾンガスなど）を供給することによって、シャトル搬送機構５０において基板Ｗの表面が処理されてもよい。 The shuttle transport mechanism 50 includes an air supply head 57. The air supply head 57 is provided at a position above the shuttle body 51 at the second transfer position L52. The air supply head 57 has a plurality of ejection holes on the lower surface and is connected to an air supply source 572 via a valve 571. When the valve 571 is opened, air is jetted downward from each ejection hole of the air supply head 57. As a result, a downflow airflow is formed inside the transfer chamber 500 of the shuttle transfer mechanism 50. By forming the downflow inside the transfer chamber 500 in this way, for example, foreign matter generated in the fluid processing unit 30 is prevented from passing through the shuttle transfer mechanism 50 and moving to the heat processing unit 40 side. it can. The air supply source 572 may be, for example, a supply source that supplies nitrogen gas (N 2 ) which is an inert gas inert to the surface of the substrate W. Thereby, a downflow of nitrogen gas can be formed. Further, the surface of the substrate W may be processed in the shuttle transfer mechanism 50 by supplying a processing gas (such as ozone gas) that can react with the surface of the substrate W as the air supply head 57.

パス部８０の内部には、基板Ｗを水平姿勢に支持するステージ８１（基板保持具）が設けられている。ステージ８１は、その上面に立設された複数のピンを備えており、その各ピンの上端で基板Ｗを下方から支持することによって、基板Ｗを水平姿勢に保持する。インデクサロボット１２のハンド１４ａ，１４ｂおよび第１搬送ロボット６０のハンド６１ａ，６１ｂは、各ピンの間に進入し、上昇することによって基板Ｗを各ピンから受け取る。 Inside the pass portion 80, a stage 81 (substrate holder) that supports the substrate W in a horizontal posture is provided. The stage 81 is provided with a plurality of pins erected on the upper surface thereof, and holds the substrate W in a horizontal posture by supporting the substrate W from below at the upper ends of the pins. The hands 14a and 14b of the indexer robot 12 and the hands 61a and 61b of the first transfer robot 60 enter between the pins and ascend to receive the substrate W from the pins.

第１搬送ロボット６０（第２搬送部）は、パス部８０（基板受渡部）およびシャトル搬送機構５０（第１搬送部）に対して同一の高さで基板Ｗを搬送する。すなわち、第１搬送ロボット６０は、パス部８０から基板Ｗを受け取った後、当該基板Ｗを上昇または下降させることなく、シャトル搬送機構５０へ搬送する。同様に、第１搬送ロボット６０は、シャトル搬送機構５０から基板Ｗを受け取った後、当該基板Ｗを上昇または下降させることなくパス部８０へ搬送する。このように、基板Ｗを鉛直方向に移動させないことによって、パス部８０とシャトル搬送機構５０間における基板Ｗの搬送時間を短縮できる。 The first transfer robot 60 (second transfer unit) transfers the substrate W to the pass unit 80 (substrate transfer unit) and the shuttle transfer mechanism 50 (first transfer unit) at the same height. That is, the first transfer robot 60, after receiving the substrate W from the pass unit 80, transfers the substrate W to the shuttle transfer mechanism 50 without raising or lowering the substrate W. Similarly, the first transfer robot 60, after receiving the substrate W from the shuttle transfer mechanism 50, transfers the substrate W to the pass unit 80 without moving up or down. In this way, by not moving the substrate W in the vertical direction, the transfer time of the substrate W between the pass unit 80 and the shuttle transfer mechanism 50 can be shortened.

制御部９０は、ＣＰＵ（プロセッサー）、ＲＯＭ、ＲＡＭ（メモリー）、固定ディスク、およびこれらを互いに接続するバスラインを備えている。固定ディスクは、固定ディスクは、ＣＰＵが実行可能なプログラム、または各種データを記憶する補助記憶装置である。 The control unit 90 includes a CPU (processor), a ROM, a RAM (memory), a fixed disk, and a bus line connecting these to each other. The fixed disk is an auxiliary storage device that stores a program executable by the CPU or various data.

制御部９０は、例えば、インデクサロボット１２が備える各モーター、各加熱処理室４２のシャッター４３およびヒーター４５、並びにシャトル搬送機構５０の直動モーター５３、昇降機構５５ａ，５５ｂおよびバルブ５７１に接続されており、これらの動作をプログラムに従って制御する。また、制御部９０は、例えば、搬送ロボット６０，７０における旋回駆動機構６２、昇降駆動機構６３、進退駆動機構６４の各モーター、各流体処理部３０のシャッター３３、回転モーター３７、並びに各流体ボックス３２Ｂのバルブ類に接続されており、これらの動作をプログラムに従って制御する。 The control unit 90 is connected to, for example, each motor of the indexer robot 12, the shutter 43 and the heater 45 of each heat treatment chamber 42, the direct drive motor 53 of the shuttle transport mechanism 50, the lifting mechanisms 55a and 55b, and the valve 571. Control these operations according to a program. In addition, the control unit 90, for example, each motor of the swing drive mechanism 62, the lifting drive mechanism 63, the advance/retreat drive mechanism 64 in the transfer robots 60 and 70, the shutter 33 of each fluid processing unit 30, the rotation motor 37, and each fluid box. It is connected to the valves of 32B and controls these operations according to a program.

制御部９０には、画像を表示する表示部、およびキーボードまたはマウスなどを含む操作部が接続される。表示部は、タッチパネルで構成されていてもよく、この場合、表示部は操作部としても機能する。 A display unit for displaying an image and an operation unit including a keyboard or a mouse are connected to the control unit 90. The display unit may be composed of a touch panel, and in this case, the display unit also functions as an operation unit.

制御部９０のバスラインには、読取装置および通信部が接続されてもよい。読取装置は、光ディスク、磁気ディスク、光磁気ディスクなどのコンピュータ読み取り可能な非一過性の記録媒体から情報の読み取りを行う。通信部は、制御部９０と他のコンピュータ（サーバーなど）との間で情報通信を可能にする。プログラムが記録された記録媒体を読取装置で読み取ることにより、当該プログラムが制御部９０に提供される。なお、プログラムは、通信部を介して制御部９０に提供されてもよい。 A reading device and a communication unit may be connected to the bus line of the control unit 90. The reading device reads information from a computer-readable non-transitory recording medium such as an optical disk, a magnetic disk, or a magneto-optical disk. The communication unit enables information communication between the control unit 90 and another computer (server or the like). The program is provided to the control unit 90 by reading the recording medium on which the program is recorded with a reading device. The program may be provided to the control unit 90 via the communication unit.

以上のように、基板処理装置１では、流体処理部３０で処理された基板Ｗは、第２搬送ロボット７０、シャトル搬送機構５０および第１搬送ロボット６０によって、流体処理部３０よりも−Ｘ側（インデクサ部ＩＤ側）の加熱処理部４０に搬送される。そして、加熱処理部４０において加熱処理が完了した基板Ｗは、第１搬送ロボット６０によって、流体処理部３０とは反対側のインデクサ部ＩＤ側に搬送される。このように、加熱処理後の基板Ｗが流体処理部３０の付近を通過させないことによって、流体処理部３０で発生した異物（処理液を含む。）が基板Ｗに付着することを抑制できる。これによって、加熱処理後に搬送される基板Ｗが汚染されることを抑制できる。また、本例では、シャトル搬送機構５０の搬送室５００の内部において、ダウンフローが形成されるため、加熱処理部４０において流体処理部３０で発生した異物が板Ｗに付着することを効果的に抑制できる。 As described above, in the substrate processing apparatus 1, the substrate W processed by the fluid processing unit 30 is on the −X side of the fluid processing unit 30 by the second transfer robot 70, the shuttle transfer mechanism 50, and the first transfer robot 60. It is conveyed to the heat treatment section 40 (on the side of the indexer section ID). Then, the substrate W, which has been subjected to the heat treatment in the heat treatment section 40, is conveyed to the indexer section ID side opposite to the fluid treatment section 30 by the first transfer robot 60. In this way, by preventing the substrate W after the heat treatment from passing near the fluid processing unit 30, it is possible to prevent foreign matter (including the processing liquid) generated in the fluid processing unit 30 from adhering to the substrate W. As a result, the substrate W transported after the heat treatment can be prevented from being contaminated. Further, in the present example, since the downflow is formed inside the transfer chamber 500 of the shuttle transfer mechanism 50, it is possible to effectively prevent foreign matter generated in the fluid processing unit 30 in the heat processing unit 40 from adhering to the plate W. Can be suppressed.

基板処理装置１では、流体処理部３０と加熱処理部４０との間で、Ｘ軸方向に基板Ｗを搬送するシャトル搬送機構５０が設けられている。このため、流体処理部３０と加熱処理部４０とをＸ軸方向に離間させることができる。これにより、加熱処理部４０において、流体処理部３０で発生した異物（処理液を含む。）が基板Ｗに付着することを抑制できる。また、加熱処理部４０を流体処理部３０から離すことによって、加熱処理部４０が持つ熱によって、流体処理部３０における雰囲気の温度が上昇することを低減できる。 In the substrate processing apparatus 1, a shuttle transfer mechanism 50 that transfers the substrate W in the X-axis direction is provided between the fluid processing unit 30 and the heat processing unit 40. Therefore, the fluid processing unit 30 and the heat processing unit 40 can be separated from each other in the X-axis direction. As a result, in the heat treatment section 40, it is possible to suppress foreign matter (including the treatment liquid) generated in the fluid treatment section 30 from adhering to the substrate W. Further, by separating the heat treatment unit 40 from the fluid treatment unit 30, it is possible to reduce the temperature rise of the atmosphere in the fluid treatment unit 30 due to the heat of the heat treatment unit 40.

＜変形例＞
上記実施形態に係る搬送ロボット６０，７０は、多関節アームで構成された進退駆動機構６４を備えることによって、ハンド６１ａ，６１ｂを前後に進退させている。しかしながら、搬送ロボットは、多関節アームを備えるものに限定されない。 <Modification>
The transfer robots 60 and 70 according to the above-described embodiment include the advancing/retreating drive mechanism 64 configured by an articulated arm to move the hands 61a and 61b back and forth. However, the transfer robot is not limited to one including an articulated arm.

図６は、変形例に係る基板処理装置１Ａの全体レイアウトを示す概略平面図である。図７は、変形例に係る搬送ロボット６０Ａの概略側面図である。図６に示すように、基板処理装置１Ａは、搬送ロボット６０，７０の代わりに、搬送ロボット６０ａ，７０ａを備えている。搬送ロボット６０ａ，７０ａは、同一の構成を備えており、以下、搬送ロボット６０ａの構成について主に説明する。 FIG. 6 is a schematic plan view showing the overall layout of the substrate processing apparatus 1A according to the modification. FIG. 7 is a schematic side view of the transfer robot 60A according to the modification. As shown in FIG. 6, the substrate processing apparatus 1A includes transfer robots 60a and 70a instead of the transfer robots 60 and 70. The transfer robots 60a and 70a have the same configuration, and the configuration of the transfer robot 60a will be mainly described below.

搬送ロボット６０ａは、基台部６５ａ、進退駆動機構６４ａ、旋回駆動機構６２ａ、昇降駆動機構６３ａを備える。搬送ロボット６０ａの基台部６５ａは、処理部ＰＵに固定されており、かつＸ軸方向に並ぶ加熱処理タワー４１と流体処理タワー３１との間の位置に固定されている。また、搬送ロボット６０ａの基台部６５ａは、パス部８０の＋Ｘ側に設けられている。なお、搬送ロボット７０ａの基台部６５ａは、Ｙ軸方向に並ぶ２つの流体処理タワー３１，３１の間の位置に固定されている。基台部６５ａの上面には、鉛直方向に延びる支柱６５１が立設されている。 The transfer robot 60a includes a base portion 65a, an advancing/retreating drive mechanism 64a, a turning drive mechanism 62a, and a lift drive mechanism 63a. The base portion 65a of the transfer robot 60a is fixed to the processing unit PU, and is also fixed at a position between the heat processing tower 41 and the fluid processing tower 31 arranged in the X-axis direction. The base portion 65a of the transfer robot 60a is provided on the +X side of the pass portion 80. The base portion 65a of the transfer robot 70a is fixed at a position between the two fluid processing towers 31 arranged in the Y-axis direction. On the upper surface of the base portion 65a, columns 651 extending vertically are provided upright.

進退駆動機構６４ａは、ハンド６１ａ，６１ｂを水平方向に移動させる。進退駆動機構６４ａは、ステージ６４１、水平方向に往復移動する水平スライダ６４２、水平スライダ６４２を移動させる水平モーター６４３を備える。ステージ６４１の上面には直線状に延びるレール（不図示）が設けられており、水平スライダ６４２の移動方向が当該レールによって規制される。水平スライダ６４２の移動は、例えばリニアモーター機構またはボールネジ機構などの周知の機構で実現される。水平スライダ６４２の先端部に、２つのハンド６１ａ，６１ｂが設けられている。水平モーター６４３によって水平スライダ６４２がレールに沿って移動することにより、ハンド６１ａ，６１ｂは水平方向に進退移動できる。換言すると、進退駆動機構６４ａは、ハンド６１ａ，６１ｂを基台部６５ａおよび支柱６５１に対して水平方向に離間および接近する方向に移動させる。 The forward/backward drive mechanism 64a moves the hands 61a and 61b in the horizontal direction. The forward/backward drive mechanism 64a includes a stage 641, a horizontal slider 642 that reciprocates in the horizontal direction, and a horizontal motor 643 that moves the horizontal slider 642. A linearly extending rail (not shown) is provided on the upper surface of the stage 641, and the moving direction of the horizontal slider 642 is regulated by the rail. The movement of the horizontal slider 642 is realized by a known mechanism such as a linear motor mechanism or a ball screw mechanism. Two hands 61a and 61b are provided at the tip of the horizontal slider 642. By moving the horizontal slider 642 along the rail by the horizontal motor 643, the hands 61a and 61b can be moved back and forth in the horizontal direction. In other words, the advancing/retreating drive mechanism 64a moves the hands 61a and 61b in a direction in which they are horizontally separated from and approached the base portion 65a and the support 651.

旋回駆動機構６２ａは、ステージ６４１を鉛直方向に沿う回動軸線ＣＡ１まわりに回動させる回動モーターを備えている。この回動モーターの駆動によって、ハンド６１ａ，６１ｂは回動軸線ＣＡ１まわりに、支柱６５１に干渉しない範囲で回動できる。 The turning drive mechanism 62a includes a turning motor that turns the stage 641 around a turning axis CA1 extending in the vertical direction. By driving this rotation motor, the hands 61a and 61b can be rotated around the rotation axis CA1 within a range not interfering with the support 651.

昇降駆動機構６３ａは、鉛直スライダ６３１、鉛直モーター６３２、連結具６３３を備えている。鉛直スライダ６３１は、支柱６５１に設けられた鉛直方向に延びるレール（不図示）に係合している。鉛直モーター６３２は、鉛直スライダ６３１を当該レールに沿って鉛直方向に往復移動させる。鉛直モーター６３２は、例えば、基台部６５ａに設けられている。鉛直スライダ６３１の移動は、例えばリニアモーター機構またはボールネジ機構などの周知の機構で実現される。連結具６３３は、鉛直スライダ６３１およびステージ６４１を連結しており、ステージ６４１を下方から支持している。鉛直モーター６３２が鉛直スライダ６３１を移動させることにより、ステージ６４１が鉛直方向に移動する。これによって、ハンド６１ａ，６１ｂが鉛直方向に昇降移動できる。 The lifting drive mechanism 63 a includes a vertical slider 631, a vertical motor 632, and a connecting tool 633. The vertical slider 631 is engaged with a rail (not shown) provided on the column 651 and extending in the vertical direction. The vertical motor 632 reciprocates the vertical slider 631 in the vertical direction along the rail. The vertical motor 632 is provided in the base part 65a, for example. The movement of the vertical slider 631 is realized by a known mechanism such as a linear motor mechanism or a ball screw mechanism. The connecting tool 633 connects the vertical slider 631 and the stage 641 and supports the stage 641 from below. The vertical motor 632 moves the vertical slider 631 to move the stage 641 in the vertical direction. As a result, the hands 61a and 61b can move up and down in the vertical direction.

搬送ロボット６０ａを備えることにより、パス部８０とシャトル搬送機構５０との間で基板Ｗを搬送できるとともに、鉛直方向に積まれた各加熱処理室４２に対して基板Ｗを搬送できる。これと同様に、搬送ロボット７０ａを備えることにより、鉛直方向に積まれた各流体処理室３２に対して基板Ｗを搬送できる。搬送ロボット６０ａ，７０ａを採用する基板処理装置１Ａは、基板処理装置１と略同一の作用効果を奏する。 By providing the transfer robot 60a, the substrate W can be transferred between the path section 80 and the shuttle transfer mechanism 50, and the substrate W can be transferred to the respective heat treatment chambers 42 stacked in the vertical direction. Similarly, by providing the transfer robot 70a, the substrates W can be transferred to the fluid processing chambers 32 stacked in the vertical direction. The substrate processing apparatus 1A that employs the transfer robots 60a and 70a has substantially the same effects as the substrate processing apparatus 1.

この発明は詳細に説明されたが、上記の説明は、すべての局面において、例示であって、この発明がそれに限定されるものではない。例示されていない無数の変形例が、この発明の範囲から外れることなく想定され得るものと解される。上記各実施形態および各変形例で説明した各構成は、相互に矛盾しない限り適宜組み合わせたり、省略したりすることができる。 Although the present invention has been described in detail, the above description is illustrative in all aspects, and the present invention is not limited thereto. It is understood that innumerable variants not illustrated can be envisaged without departing from the scope of the invention. The configurations described in the above-described embodiments and modified examples can be appropriately combined or omitted as long as they do not contradict each other.

１ 基板処理装置
１２ インデクサロボット
３０ 流体処理部（規定処理部）
３２ 流体処理室（規定処理室）
３９ ノズル（処理ツール）
４０ 加熱処理部
４２ 加熱処理室
４５ ヒーター
５０ シャトル搬送機構
５００ 搬送室
５０１ レール
５１ シャトル本体部
５２ａ，５２ｂ 基板保持具（第１基板保持具）
５３ 直動モーター（第１モーター）
５７ エア供給ヘッド
６０ 第１搬送ロボット
６１ａ，６１ｂ ハンド（第２基板保持具、第３基板保持具）
６２ 旋回駆動機構
６３ 昇降駆動機構
７０ 第２搬送ロボット
８０ パス部
８１ ステージ
９０ 制御部
Ｃ キャリア（収納室）
ＩＤ インデクサ部（基板供給部）
Ｗ 基板 1 Substrate Processing Device 12 Indexer Robot 30 Fluid Processing Section (Regulated Processing Section)
32 Fluid processing room (regulated processing room)
39 nozzles (processing tools)
40 heat treatment part 42 heat treatment chamber 45 heater 50 shuttle transfer mechanism 500 transfer chamber 501 rail 51 shuttle main body 52a, 52b substrate holder (first substrate holder)
53 Direct drive motor (first motor)
57 air supply head 60 first transfer robot 61a, 61b hand (second substrate holder, third substrate holder)
62 turning drive mechanism 63 lifting drive mechanism 70 second transfer robot 80 path section 81 stage 90 control section C carrier (storage room)
ID indexer section (board supply section)
W board

Claims (10)

基板を処理する基板処理装置であって、
前記基板を収容する規定処理室および前記規定処理室において前記基板に対して規定処理を行う処理ツールを有する規定処理部と、
前記基板を収納する収納室からの前記基板を前記規定処理部に供給する基板供給部と、
前記基板供給部と前記規定処理部との間に設けられ、前記基板を収容する加熱処理室および前記加熱処理室にて前記基板を加熱するヒーターを有する加熱処理部と、
前記基板供給部から供給される前記基板を、順に、前記規定処理部、前記加熱処理部、前記基板供給部に搬送する搬送部と、
を備える、基板処理装置。 A substrate processing apparatus for processing a substrate, comprising:
A prescribed processing unit having a prescribed processing chamber that accommodates the substrate and a treatment tool that performs the prescribed treatment on the substrate in the prescribed processing chamber;
A substrate supply unit that supplies the substrate from a storage chamber that stores the substrate to the prescribed processing unit;
A heat treatment unit provided between the substrate supply unit and the prescribed treatment unit, and having a heat treatment chamber that accommodates the substrate and a heater that heats the substrate in the heat treatment chamber;
The substrate supplied from the substrate supply unit, in order, the prescribed processing unit, the heat treatment unit, a transfer unit for transferring to the substrate supply unit,
A substrate processing apparatus comprising: 請求項１の基板処理装置であって、
前記処理ツールは、前記基板に流体を供給するノズル、を含む、基板処理装置。 The substrate processing apparatus according to claim 1, wherein
The substrate processing apparatus, wherein the processing tool includes a nozzle that supplies a fluid to the substrate. 請求項２の基板処理装置であって、
前記流体は、処理液を含む、基板処理装置。 The substrate processing apparatus according to claim 2, wherein
The substrate processing apparatus, wherein the fluid includes a processing liquid. 請求項１から請求項３のいずれか１項の基板処理装置であって、
前記加熱処理部と前記規定処理部とが第１方向に離間して配置されており、
前記搬送部は、
前記加熱処理室と前記規定処理室との間に配置される第１搬送部、
を含み、
前記第１搬送部は、前記基板を保持する第１基板保持具、および前記第１基板保持具を第１方向に移動させる第１モーターを有する、基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 3,
The heat treatment unit and the prescribed treatment unit are arranged in the first direction with a space therebetween,
The transport section is
A first transfer unit disposed between the heat treatment chamber and the prescribed treatment chamber,
Including
The said 1st conveyance part is a substrate processing apparatus which has a 1st board|substrate holder which hold|maintains the said board|substrate, and a 1st motor which moves the said 1st board|substrate holder in a 1st direction. 請求項４の基板処理装置であって、
前記搬送部は、
前記基板を保持する第２基板保持具を有し、前記基板供給部、前記加熱処理部および前記第１搬送部との間で前記基板を搬送する第２搬送部と、
前記基板を保持する第３基板保持具を有し、前記第１搬送部および前記規定処理部との間で前記基板を搬送する第３搬送部と、
を含む、基板処理装置。 The substrate processing apparatus according to claim 4, wherein
The transport section is
A second transport unit that has a second substrate holder that holds the substrate, and that transports the substrate between the substrate supply unit, the heat treatment unit, and the first transport unit;
A third transport unit that has a third substrate holder that holds the substrate, and that transports the substrate between the first transport unit and the regulation processing unit;
A substrate processing apparatus including: 請求項５の基板処理装置であって、
前記第２搬送部は、前記第２基板保持具を鉛直方向の旋回軸線まわりに旋回させる旋回モーター、をさらに有する、基板処理装置。 The substrate processing apparatus according to claim 5, wherein
The said 2nd conveyance part is a substrate processing apparatus which further has the revolving motor which revolves the said 2nd board|substrate holder about the revolving axis line of a vertical direction. 請求項５または請求項６の基板処理装置であって、
前記加熱処理部は、鉛直方向に重なる複数の前記加熱処理室を含み、
前記規定処理部は、鉛直方向に重なる複数の前記規定処理室を含み、
前記第２搬送部および前記第３搬送部の各々は、前記第２基板保持具および前記第３基板保持具の各々を鉛直方向に移動させる移動モーターを有する、基板処理装置。 The substrate processing apparatus according to claim 5 or 6, wherein
The heat treatment section includes a plurality of the heat treatment chambers that overlap in the vertical direction,
The prescribed processing unit includes a plurality of the prescribed processing chambers that vertically overlap,
The substrate processing apparatus, wherein each of the second transfer unit and the third transfer unit has a movement motor that moves each of the second substrate holder and the third substrate holder in the vertical direction. 請求項７の基板処理装置であって、
前記第２搬送部が前記加熱処理部における最も高い前記加熱処理室に前記基板を搬送するときの前記基板の鉛直位置、および前記第３搬送部が前記規定処理部における最も高い前記規定処理室に前記基板を搬送するときの前記基板の鉛直位置が同一である、
基板処理装置。 The substrate processing apparatus according to claim 7, wherein
The vertical position of the substrate when the second transfer unit transfers the substrate to the highest heat treatment chamber in the heat treatment unit, and the third transfer unit is the highest prescribed treatment chamber in the regulation treatment unit. The vertical position of the substrate when transporting the substrate is the same,
Substrate processing equipment. 請求項５から請求項８のいずれか１項の基板処理装置であって、
前記基板供給部は、前記収納室よりも前記規定処理部に近い位置に設けられ、前記基板を保持する基板受渡部、を含み、
前記第２搬送部は、前記基板受渡部および前記第１搬送部に対して同一の高さで前記基板を搬送する、基板処理装置。 The substrate processing apparatus according to any one of claims 5 to 8, wherein:
The substrate supply unit is provided at a position closer to the prescribed processing unit than the storage chamber, and includes a substrate transfer unit that holds the substrate,
The substrate processing apparatus, wherein the second transfer unit transfers the substrate at the same height as the substrate transfer unit and the first transfer unit. 請求項４から請求項９のいずれか１項の基板処理装置であって、
前記第１基板保持具よりも上方の位置から下方に向けてエアを供給するエア供給部、
をさらに備える、基板処理装置。 The substrate processing apparatus according to any one of claims 4 to 9,
An air supply unit that supplies air downward from a position above the first substrate holder,
A substrate processing apparatus further comprising:
JP2018247438A 2018-12-28 2018-12-28 Substrate processing equipment Active JP7156940B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018247438A JP7156940B2 (en) 2018-12-28 2018-12-28 Substrate processing equipment
TW108140188A TWI747074B (en) 2018-12-28 2019-11-06 Substrate processing apparatus
CN201980086960.5A CN113228239B (en) 2018-12-28 2019-12-16 Substrate processing apparatus
PCT/JP2019/049110 WO2020137646A1 (en) 2018-12-28 2019-12-16 Substrate processing device
KR1020217017368A KR102500916B1 (en) 2018-12-28 2019-12-16 Substrate processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018247438A JP7156940B2 (en) 2018-12-28 2018-12-28 Substrate processing equipment

Publications (2)

Publication Number Publication Date
JP2020107804A true JP2020107804A (en) 2020-07-09
JP7156940B2 JP7156940B2 (en) 2022-10-19

Family

ID=71129019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018247438A Active JP7156940B2 (en) 2018-12-28 2018-12-28 Substrate processing equipment

Country Status (5)

Country Link
JP (1) JP7156940B2 (en)
KR (1) KR102500916B1 (en)
CN (1) CN113228239B (en)
TW (1) TWI747074B (en)
WO (1) WO2020137646A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023140751A (en) * 2022-03-23 2023-10-05 株式会社Ｓｃｒｅｅｎホールディングス Lens inspection device
US20240213078A1 (en) * 2022-12-22 2024-06-27 Applied Materials, Inc. Substrate supports and transfer apparatus for substrate deformation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225935A (en) * 2009-03-24 2010-10-07 Dainippon Screen Mfg Co Ltd Substrate processing apparatus
JP2016103597A (en) * 2014-11-28 2016-06-02 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
JP2016219471A (en) * 2015-05-15 2016-12-22 株式会社Ｓｃｒｅｅｎホールディングス Liquid filling method
JP2017162978A (en) * 2016-03-09 2017-09-14 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3330300B2 (en) 1997-02-28 2002-09-30 東京エレクトロン株式会社 Substrate cleaning device
WO2003021642A2 (en) * 2001-08-31 2003-03-13 Applied Materials, Inc. Method and apparatus for processing a wafer
JP2003179025A (en) 2001-09-27 2003-06-27 Dainippon Screen Mfg Co Ltd Substrate processing apparatus
JP2008172160A (en) * 2007-01-15 2008-07-24 Dainippon Screen Mfg Co Ltd Device and method for processing substrate
JP2011071169A (en) * 2009-09-24 2011-04-07 Dainippon Screen Mfg Co Ltd Substrate processing method and apparatus
JP6407609B2 (en) * 2014-08-01 2018-10-17 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225935A (en) * 2009-03-24 2010-10-07 Dainippon Screen Mfg Co Ltd Substrate processing apparatus
JP2016103597A (en) * 2014-11-28 2016-06-02 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
JP2016219471A (en) * 2015-05-15 2016-12-22 株式会社Ｓｃｒｅｅｎホールディングス Liquid filling method
JP2017162978A (en) * 2016-03-09 2017-09-14 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus

Also Published As

Publication number Publication date
TW202044470A (en) 2020-12-01
CN113228239A (en) 2021-08-06
KR20210091218A (en) 2021-07-21
TWI747074B (en) 2021-11-21
KR102500916B1 (en) 2023-02-17
JP7156940B2 (en) 2022-10-19
CN113228239B (en) 2024-10-29
WO2020137646A1 (en) 2020-07-02

Similar Documents

Publication Publication Date Title
US11587816B2 (en) Container storage add-on for bare workpiece stocker
JP5102717B2 (en) Substrate transport apparatus and substrate processing apparatus provided with the same
JP2010238783A (en) Substrate processing apparatus and substrate transport method
WO2017154639A1 (en) Substrate processing device
US11139192B2 (en) Substrate treating apparatus and substrate transporting method
JP6045869B2 (en) Substrate processing apparatus and substrate processing method
TWI738160B (en) Substrate treating apparatus, carrier transporting method, and carrier buffer device
JP2023090874A (en) connection module
JP2020109785A (en) Substrate processing apparatus and substrate transportation method
WO2020137646A1 (en) Substrate processing device
JP7136612B2 (en) Conveyor with local purge function
JP2017162978A (en) Substrate processing apparatus
KR20150058255A (en) Substrate processing device
KR102324405B1 (en) Apparatus and Method for treating substrate
JP5283770B2 (en) Substrate transport apparatus and substrate processing apparatus provided with the same
JP5238331B2 (en) Substrate processing apparatus and substrate processing system
KR20210010401A (en) Substrate processing system and substrate transporting method
JP4597810B2 (en) Substrate processing apparatus and substrate transfer method
KR20220138337A (en) Substrate processing apparatus and substrate processing method
KR102343640B1 (en) Apparatus for treating substrate
JP2024046366A (en) Substrate processing apparatus
KR20230149533A (en) Substrate processing module and substrate processing apparatus including same
JP2009049233A (en) Substrate processing equipment
JP2005093491A (en) Substrate-processing device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210618

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220517

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220701

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20221004

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20221006

R150 Certificate of patent or registration of utility model

Ref document number: 7156940

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150