JP2020080382A - Bonding device, die bonder, and bonding method - Google Patents

Abstract

To provide a bonding device, a die bonder, and a bonding method that can improve productivity, manufacture various products, and prevent deterioration of bonding quality.SOLUTION: A bonding device includes heating means that heats a supply target member at a bonding position where a workpiece is bonded to a supply target member, and bonds the workpiece to the supply target member via an adhesive. The bonding device includes control means that sets the temperature of the supply target member capable of bonding the workpiece, and temperature measuring means that measures the temperature of the supply target member, and the workpiece is bonded to the supply target member in a state where the temperature of the supply target member reaches the temperature set by the control means.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a bonding device, a die bonder, and a bonding method.

  In the manufacture of semiconductor devices, a chip bonding method in which a wafer in which a large number of elements are built in a batch is diced to separate individual semiconductor chips, and the individual semiconductor chips are bonded one by one to a predetermined position such as a lead frame. Has been adopted. A die bonder (bonding device) as disclosed in Patent Document 1 is used for this chip bonding.

  As shown in FIG. 7, the bonding apparatus includes a bonding arm (not shown) having a collet 3 for sucking the semiconductor chip 1 of the supply unit 2 and a confirmation camera (not shown) for observing the semiconductor chip 1 of the supply unit 2. And a confirmation camera (not shown) for observing the island portion 5 of the lead frame 4 at the bonding position.

  The supply unit 2 includes a semiconductor wafer 6 (see FIG. 8), and the semiconductor wafer 6 is divided into a large number of semiconductor chips 1. That is, the wafer 6 is attached to an adhesive sheet (dicing sheet), and the dicing sheet is held by an annular frame. Then, the wafer 6 on the dicing sheet is diced into individual pieces by using a circular blade (dicing saw) or the like. Further, the bonding arm holding the collet 3 can be moved between the pickup position and the bonding position via the transfer mechanism.

  The tip of the collet 3 is vacuum-sucked through a suction hole opened on the lower end surface of the collet 3, and the tip 1 is adsorbed on the lower end surface of the collet 3. If this vacuum suction (vacuum suction) is released, the chip 1 is detached from the collet 3.

  Next, a die bonding method using this die bonder will be described. First, the chip 1 to be picked up is observed by a confirmation camera arranged above the supply unit 2, the collet 3 is positioned above the chip 1 to be picked up, and then the collet 3 is indicated by an arrow B. Is lowered to pick up this chip 1. Then, the collet 3 is raised as indicated by arrow A.

  Next, the island portion 5 of the lead frame 4 to be bonded is observed with the confirmation camera arranged above the bonding position, the collet 3 is moved in the direction of arrow E, and the island portion 5 is positioned above the island portion 5. After the positioning, the collet 3 is moved down as shown by the arrow D, and the chip 1 is supplied to the island portion 5. After supplying the chips to the island portion 5, the collet 3 is raised as indicated by arrow C and then returned to the standby position above the pickup position as indicated by arrow F.

  The collet 3 is moved by a moving mechanism (not shown) as a transport mechanism in the arrow A direction and the arrow B direction on the pickup position P, and in the arrow C direction and the arrow D on the bonding position Q. And the reciprocating movement between the pickup position P and the bonding position Q in the directions of the arrows E and F is possible. The moving mechanism controls the movement of the arrows A, B, C, D, E, and F by a control unit (not shown). The moving mechanism can be composed of various mechanisms such as a cylinder mechanism, a ball screw mechanism, a motor linear mechanism, and an XYZ axis stage (stage device) can be used.

  By the way, there is a chip on the back surface of which a die attach film (DAF) for adhesion to a supply target member such as a lead frame or a substrate is attached. The die attach film is a film-like adhesive and is hardened by heating. That is, at the bonding position, the supply target member is placed on a stage equipped with heating means (for example, a heater), and the die attach film is bonded by bonding the chip to the supply target member heated to a predetermined temperature. The chip is bonded to the supply target member via. For this reason, conventionally, when bonding the chip to the supply target member, the temperature of the supply target member is shown in a of FIG. 9 from being conveyed until the temperature of the supply target member reaches a temperature at which thermocompression bonding is possible. As described above, by waiting for a predetermined time, it is attempted to bond with the same quality from the chip to be bonded first to the chip to be bonded last.

  The time a at which the supply target member is predicted to rise to a predetermined temperature (the temperature at which thermocompression bonding is possible) is set arbitrarily by the user. As a method of determining the time a, for example, there is a method of attaching a thermocouple to the supply target member and monitoring how many seconds the temperature rises. Further, the waiting time may be adjusted to be longer or shorter depending on whether or not the bonding quality is good by observing the bonding result.

JP, 2008-124382, A

  In the method of attaching a thermocouple to the supplied member and monitoring the time until it rises to a predetermined temperature to determine the waiting time, the next step, island recognition (Fig. 9b) and bonding (FIG. 9c) are started. Therefore, even if the temperature of the supply target member does not actually reach the predetermined temperature at which the supply target member can be crimped, as shown in d of FIG. The next process was started without issuing. In this case, the bonding strength becomes insufficient and the bonding quality becomes poor. On the contrary, when the apparatus is stopped due to an error stop or the like, as shown in e of FIG. 9, the temperature of the supply-target member has risen to a predetermined temperature at which it can be pressure-bonded, but waits for a predetermined time. It may be a time loss.

  In addition, according to the method of adjusting the waiting time by lengthening or shortening the waiting time based on whether the bonding quality is good or not based on the bonding result, the type and size of the member to be supplied, the chip to be bonded The standby time can be set with only one pattern for various conditions such as the property, type of adhesive, stacking chips, and the like. For this reason, it is not possible to deal with products with conditions different from those set, and it is not possible to manufacture various products. In addition, when the substrates are pitch-fed, each line may wait until the substrates that have come out of the heating area warm up. In this case, depending on the transportation conditions, it is determined whether or not to wait and how many seconds to wait. Different judgments cannot be applied to various patterns.

  Therefore, in view of such circumstances, the present invention aims to provide a bonding apparatus, a die bonder, and a bonding method capable of improving productivity, manufacturing various products, and preventing deterioration of bonding quality.

  The bonding apparatus of the present invention is provided with a heating unit for heating the supply target member at a bonding position for bonding the work to the supply target member, and bonding the work to the supply target member via an adhesive. A control means for setting the temperature of the supplied member that can be provided, and a temperature measuring means for measuring the temperature of the supplied member, in a state in which the temperature of the supplied member has reached the temperature set in the control means, The work is bonded to the supply target member.

  According to the bonding apparatus of the present invention, since the temperature of the supplied member is measured by the temperature measuring means, the temperature of the supplied member is actually the bonding temperature regardless of the conditions of the supplied member and the work and the heating time. Since the bonding can be started when the temperature reaches the target (the measurement result of the temperature of the supplied member can be used as the bonding start condition), it is not necessary to set the waiting time for each conveying condition of the supplied member, Preliminary experiments for grasping the temperature rise time are also unnecessary. Further, since the temperature measurement means can monitor the temperature drop, it is possible to prevent bonding when the supply target member does not reach the bonding temperature.

  In the above configuration, the control unit includes a heating time setting unit that sets a heating time of the supply target member, and when the temperature of the supply target member does not reach the temperature set by the control unit in the heating time. It may be one that recognizes an error. In particular, when the adhesive is DAF, if the DAF is heated for a predetermined time or more, curing proceeds and the quality of other processes is affected. Therefore, it is necessary to control the total heating time. In the present invention, the total heating time can be managed.

  In the above configuration, a stage having a suction mechanism for sucking the supply target member may be provided, and when an error is recognized, the supply target member suctioned to the stage may be sucked again through the suction mechanism. .. Further, a pressing mechanism for pressing the supplied member on the stage may be provided, and when an error is recognized, the supplied member held by the pressing mechanism may be pressed again. Further, when an error is recognized, the heating means may heat at a temperature different from the temperature set by the control means.

  In the die bonder of the present invention, the work is a wafer chip, and the member to be supplied is a substrate to be an island portion which is the supplied portion, and the bonding according to any one of claims 1 to 4. Using the apparatus, chips are sequentially bonded to the island portion of the substrate that has been transported to the bonding position that is the supply position.

  The bonding method of the present invention is a bonding method in which a workpiece can be bonded in a bonding method in which the supplied member is heated at a bonding position for bonding the workpiece to the supplied member and the work is bonded to the supplied member via an adhesive. The temperature of the member is set, the temperature of the member to be supplied is measured, and the work is bonded to the member to be supplied when the temperature of the member to be supplied reaches the set temperature.

  In the above configuration, the heating time of the supply target member may be set, and an error may be recognized when the temperature of the supply target member does not reach the set temperature during the heating time.

  In the above configuration, when an error is recognized, the supply target member sucked on the stage may be sucked again via the suction mechanism that sucks the supply target member on the stage. Further, when an error is recognized, the supply target member that is being pressed by the pressing mechanism that presses the supply target member on the stage may be pressed again. Further, when an error is recognized, heating may be performed at a temperature different from the set temperature.

  The bonding apparatus, the die bonder, and the bonding method of the present invention can start bonding when the temperature of the supply target member actually reaches the bonding temperature, and set the waiting time for each conveyance status of the supply target member. It becomes unnecessary, and preliminary experiments for grasping the temperature rise time of the supply target member become unnecessary, so that productivity can be improved and various products can be manufactured. Furthermore, it is possible to prevent bonding when the supply target member has not reached the bonding temperature, and it is possible to prevent deterioration of the bonding quality.

It is a simplified perspective view of the bonding apparatus of this invention. It is a block diagram of a bonding device of the present invention. It is a block diagram of the control means which comprises the bonding apparatus of 1st Embodiment of this invention. It is a flowchart figure which shows the bonding method of this invention. It is a graph which shows the heating time and temperature of the to-be-supplied member by the bonding apparatus of this invention, and the timing of the following process. It is a block diagram of the control means which comprises the bonding apparatus of 2nd Embodiment of this invention. It is a simplified diagram which shows operation|movement of a general bonding apparatus. It is a simplified diagram showing a wafer. It is a graph which shows the heating time and temperature of the to-be-supplied member by the conventional bonding apparatus, and the timing of the following process.

  Embodiments of the present invention will be described below with reference to FIGS.

  The bonding apparatus of the present invention is an apparatus installed in a die bonder that adheres a die (chip of a silicon substrate on which an electronic circuit is formed) to a supply target member such as a lead frame or a substrate via an adhesive. In this embodiment, the adhesive is a die attach film (DAF) provided on the back surface of the chip. The die attach film is a film-like adhesive and is hardened by heating.

  The bonding apparatus includes a bonding arm 30 having a collet 23 for adsorbing a semiconductor chip (hereinafter referred to as a chip 21) of a supply unit 22, a recognition camera 26 for observing the chip 21 of the supply unit 22, and a member to be supplied at a bonding position. And a recognition camera 32 for observing the island portion 25 of the substrate 24.

  The supply unit 22 includes a semiconductor wafer 28 mounted and supported by the wafer support device 27. The semiconductor wafer 28 is divided into a large number of chips 21. The collet 23 is connected to a collet holder 29, and the collet 23, the collet holder 29, and the like constitute a bonding arm 30. The bonding arm 30 can be moved between the pickup position and the bonding position via the transfer means 31. The transfer means 31 can drive the bonding arm 30 in the X, Y, θ, and Z directions.

  The tip 21 of the collet 23 is vacuum-sucked through a suction hole opened at the lower end surface of the collet 23, and the tip 21 is adsorbed to the lower end surface of the collet 23. When the vacuum suction (vacuum suction) is released, the chip 21 is detached from the collet 23.

  The substrate 24 is placed on a stage (not shown). A heating means (for example, a heater) is arranged on this stage to heat the substrate 24. For this reason, the substrate 24 is placed in a high temperature atmosphere, and the chip 21 is bonded to the substrate 24 that has reached a predetermined temperature capable of thermocompression bonding, so that the chip 21 is bonded to the substrate via the die attach film. be able to.

  A suction hole is provided in the stage, and a vacuum source such as a vacuum pump (not shown) is connected to the stage. The suction mechanism including the suction holes and the vacuum source serves as a fixing unit that fixes the substrate 24 to the stage. That is, when the vacuum source is driven while the substrate 24 is placed on the stage, the substrate 24 is adsorbed through the adsorption holes, and the substrate 24 is entirely adsorbed (fixed) on the stage 2.

  A recognition camera 26 is arranged above the supply unit 22, and the recognition camera 26 observes the chip 21 to be picked up. Further, a recognition camera 32 is arranged above the bonding position, and the recognition camera 32 observes the island portion 25 of the substrate 24 to be bonded.

  A temperature measuring means (temperature sensor 33 (see FIG. 2)) is mounted on the recognition camera 32 located above the bonding position. The temperature sensor 33 may be a publicly known one, and may be a contact type (for example, a resistance temperature detector, a thermistor, a thermocouple, an IC temperature sensor, etc.) or a non-contact type (for example, a radiation thermometer). Etc.), and a non-contact type temperature sensor is used in this embodiment. As a result, the temperature sensor 33 is arranged immediately above the bonding position, and the temperature of the island portion 25 to be bonded can be measured without contact.

  The transport means 31 is controlled by the control means 34 as shown in FIG. The control unit 34 can be configured by, for example, a microcomputer in which a central processing unit (CPU) is centrally located and a ROM (Read Only Memory), a RAM (Random Access Memory), and the like are connected to each other via a bus. The ROM stores programs executed by the CPU and data.

  As shown in FIG. 3, the control unit 34 includes a junction temperature information setting unit 36 and a determination unit 37. The bonding temperature information setting unit 36 stores the temperature range of the substrate 24 (bonding temperature information) set by the user in advance. The joining temperature information is a temperature range of the substrate 24 to which the chip 21 can be bonded. For example, the type of the adhesive such as DAF, the thickness of the substrate 24, the presence or absence of the stack of the chips 21 and the like are used to determine the chip 21. The temperature range of the substrate 24 is suitable for the joining, and is freely set by the user.

  The determination unit 37 determines whether or not the temperature of the substrate 24 actually measured by the temperature sensor 33 has reached the temperature stored in the bonding temperature information setting unit 36. When the determination means 37 determines that the arrival has arrived, the transport means 31 is driven to start bonding. On the other hand, if it is determined that it has not arrived, the standby state is set.

  Next, a bonding method using the bonding apparatus will be described with reference to FIGS. First, the user determines the temperature range (bonding temperature information) of the substrate 24 to which the chip 21 can be bonded, and stores the bonding temperature information in the control means 34 (bonding temperature information setting unit 36) (step S1).

  When the substrate 24 is transported to the stage, the substrate 24 is heated by the heating means of the stage, as shown in A of FIG. At that time, as shown in FIG. 5B, the temperature of the substrate 24 on the stage is measured by the temperature sensor 33 (step S2).

  The determination unit 37 determines whether the temperature of the substrate 24 measured by the temperature sensor 33 has reached the set temperature stored in the bonding temperature information setting unit 36 (step S3). If it has not arrived, it is put in a standby state, and if it has arrived, image processing is started as shown in C of FIG. 5 (step S4). That is, the island portion 25 of the substrate 24 to be bonded is observed with the recognition camera 32 arranged above the bonding position.

  Then, as shown in D of FIG. 5, bonding is started (step S5). That is, the chip 21 to be picked up is observed by the recognition camera 26 arranged above the supply unit 22, the collet 23 is positioned above the chip 21 to be picked up, and then the collet 23 is lowered to move the chip. The chip 21 is picked up, the collet 23 is moved onto the island portion 25, and then the collet 24 is lowered to supply the chip 21 to the island portion 25.

  In the bonding apparatus and the bonding method of the first embodiment, since the temperature of the substrate 24 is measured by the temperature sensor 33, the temperature of the substrate 24 is actually bonded regardless of the conditions of the substrate 24 and the chip 21 and the heating time. Since the bonding can be started when the temperature is reached (the measurement result of the temperature of the substrate 24 can be used as the bonding start condition), it is not necessary to set the waiting time for each transfer condition of the substrate 24, and the temperature of the substrate 24 can be reduced. Preliminary experiments for ascertaining the rise time are also unnecessary, productivity can be improved, and various products can be manufactured. Further, since the temperature drop can be monitored by the temperature sensor 33, it is possible to prevent the bonding when the substrate 24 has not reached the bonding temperature and prevent the deterioration of the bonding quality.

  FIG. 6 shows a bonding apparatus according to the second embodiment. As shown in FIG. 6A, the control unit 40 of the bonding apparatus of the second embodiment has a bonding temperature information setting unit 36, a timer 41, a heating time setting unit 42, a determination unit 43, and a warning unit 44. It has and. The bonding temperature information setting unit 36 is similar to that of the control unit of the bonding apparatus according to the first embodiment, and stores the temperature range (bonding temperature information) of the substrate 24 preset by the user.

  The timer 41 counts the time from when the temperature sensor 33 starts measuring the temperature of the substrate 24.

  The heating time setting unit 42 stores the heating time of the substrate 24 set by the user in advance. The heating time is allowed until the temperature of the substrate 24 suitable for joining the chips 21 is reached, depending on conditions such as the type of adhesive such as DAF, the thickness of the substrate 24, the presence or absence of stacking of the chips 21. The time range to be set, which is freely set by the user.

  The determination unit 43 includes a temperature determination unit 45 and a time determination unit 46. The temperature determination unit 45 determines whether or not the temperature of the substrate 24 actually measured by the temperature sensor 33 has reached the set temperature stored in the bonding temperature information setting unit 36. The time determination unit 46 determines whether or not the time after the temperature sensor 33 starts measuring the temperature of the substrate 24 is within the range of the heating time stored in the heating time setting unit 42. ..

  The warning unit 44 gives a warning when the time determination unit 46 has not measured the temperature of the substrate 24 by the temperature sensor 33 within the heating time stored in the heating time setting unit 42. It is something to do. The warning can be issued by generating an error sound, displaying an error on the monitor, stopping the device, or the like. In the present embodiment, as shown in FIG. 6A, when an error is recognized, the substrate 24 sucked on the stage is sucked again via the suction mechanism 47.

  The bonding apparatus and the bonding method of the second embodiment also have the same effects as the bonding apparatus and the bonding method of the first embodiment. In particular, the reason why the substrate 24 cannot be heated within the predetermined time is that the substrate 24 is not in close contact with the stage in many cases. Therefore, when an error is recognized, the substrate 24 attracted to the stage again via the adsorption mechanism 47 is again detected. Re-adsorption increases the possibility of eliminating the cause of the error, and the substrate 24 can be appropriately heated. In addition, when the adhesive is DAF, if the DAF is heated for a predetermined time or more, the curing proceeds and the quality of other processes is affected. Therefore, it is necessary to control the total heating time. In this embodiment, the total heating time can be managed.

  As a modified example of the second embodiment, there is a case where the stage on which the substrate 24 is mounted is not provided with a suction hole, and the stage is provided with a pressing mechanism (not shown) that presses the substrate 24. That is, the pressing mechanism includes a pressing body that is provided above the stage and presses the substrate 24 against the stage from above, and a reciprocating mechanism that includes a cylinder mechanism that moves the pressing body up and down and a linear guide mechanism. To be done.

  In this case, as shown in FIG. 6B, when an error is recognized, the substrate 24 held by the holding mechanism 48 is held again. Thereby, the substrate 24 can be brought into close contact with the stage, and the substrate 24 can be appropriately heated.

  Further, in another modification of the second embodiment, as shown in FIG. 6C, the heating means 49 heats at a temperature different from the temperature set in the control means 40 when an error is recognized. Is. That is, if the temperature of the substrate 24 does not reach the temperature set in the bonding temperature information setting unit 36 (lower than the set temperature) even after the heating time stored in the heating time setting unit 42 has passed, the heating means 49. Performs heating at a temperature higher than the temperature set in the joining temperature information setting unit 36. Thereby, the substrate 24 can be appropriately heated.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments and various modifications are possible. For example, as an adhesive agent for adhering a workpiece to a supply target member, DAF is not used. It can also be applied to a paste-like adhesive (for example, bonding at a temperature suitable for improving fluidity). The temperature sensor may be a non-contact type or a contact type as long as it can measure the surface temperature of the substrate. The temperature may be monitored for each row of islands or every several rows of islands. If the stage has both a suction mechanism and a holding mechanism, when an error is recognized, only the suction mechanism is restarted, only the holding mechanism is restarted, or both the suction mechanism and the holding mechanism are operated. You may restart it.

  In the above-described embodiment, the case where the temperature of the substrate is measured immediately before bonding the chip to the substrate has been described, but it may be used as a setup support function when determining the initial condition, not immediately before bonding.

21 chip 24 substrate 33 temperature sensor 34 control means 42 heating time setting unit

A first bonding apparatus of the present invention is a bonding apparatus for bonding a work to a supply target member via an adhesive, which comprises a heating unit for heating the supply target member at a bonding position for bonding the work to the supply target member. A control means for setting the temperature of the supplied member capable of bonding the workpiece and a temperature measuring means for measuring the temperature of the supplied member are provided, and the temperature of the supplied member has reached the temperature set by the control means. In the state, the work is bonded to the supply target member, the temperature set in the control means is based on the bonding temperature information, the bonding temperature information is the temperature range of the substrate to which the work can be bonded, The decrease from this temperature is monitored by a temperature sensor .

A second bonding apparatus of the present invention is a bonding apparatus for bonding a work to a supply target member through an adhesive, the heating device heating the supply target member at a bonding position for bonding the work to the supply target member. A control means for setting the temperature of the supplied member capable of bonding the work and a temperature measuring means for measuring the temperature of the supplied member are provided, and the temperature of the supplied member has reached the temperature set by the control means. In this state, the workpiece is bonded to the supply target member, and the control means includes a heating time setting unit for setting the heating time of the supply target member, and the temperature of the supply target member is controlled by the heating time setting unit. The stage is provided with a suction mechanism that recognizes an error when the temperature set in the means is not reached, and that sucks the member to be supplied, and when the error is recognized, the stage sucked by the stage via the suction mechanism is detected. The supply member is sucked again.
In particular, when the adhesive is DAF, if the DAF is heated for a predetermined time or more, curing proceeds and the quality of other processes is affected. Therefore, it is necessary to control the total heating time. In the present invention, the total heating time can be managed.

A third bonding apparatus of the present invention is a bonding apparatus for bonding a work to a supply target member through an adhesive, the heating unit heating the supply target member at a bonding position for bonding the work to the supply target member. A control means for setting the temperature of the supplied member capable of bonding the workpiece and a temperature measuring means for measuring the temperature of the supplied member are provided, and the temperature of the supplied member has reached the temperature set by the control means. In this state, the workpiece is bonded to the supply target member, and the control means includes a heating time setting unit for setting the heating time of the supply target member, and the temperature of the supply target member is controlled by the heating time setting unit. When the temperature set in the means is not reached, an error is recognized, and a pressing mechanism for pressing the supplied member on the stage is provided. When the error is recognized, the supplied member pressed by the pressing mechanism is pressed again. It is a fix.
When error recognition, the heating means may be one of heating at different temperatures and the temperature set on the control unit.

A first bonding method of the present invention is a bonding method for heating a supply target member at a bonding position where a work is bonded to a supply target member and bonding the work to the supply target member via an adhesive. possible to set the temperature of the feed member, said by measuring the temperature of the feed member, in a state where the temperature of the supply member reaches the set temperature, which bonding the workpiece to supply target member, supply When the heating time of the member is set, an error is recognized when the temperature of the supplied member does not reach the set temperature in the heating time, and when the error is recognized, an adsorption mechanism that adsorbs the supplied member to the stage The member to be supplied that has been sucked to the stage is sucked again.

A second bonding method of the present invention is a bonding method for heating a supply target member at a bonding position where a work is bonded to the supply target member and bonding the work to the supply target member via an adhesive. Set the temperature of the supplied material that can be
  The temperature of the supply target member is measured, and when the temperature of the supply target member reaches the set temperature, the work is bonded to the supply target member, the heating time of the supply member is set, and the heating is performed. When the temperature of the supplied member does not reach the set temperature in time, an error is recognized, and when the error is recognized, the supplied member held by the pressing mechanism that holds the supplied member on the stage is pressed again. It is a thing.

When error recognition, or it may be heated at different temperatures and the set temperature.

Claims (11)

In a bonding device for bonding a work to a supply target member, a heating unit for heating the supply target member is provided at a bonding position for bonding the work to the supply target member,
A control means for setting the temperature of the supplied member capable of bonding the work and a temperature measuring means for measuring the temperature of the supplied member are provided, and the temperature of the supplied member has reached the temperature set by the control means. A bonding apparatus, which bonds a workpiece to a supply target member in a state.   The control means includes a heating time setting unit for setting a heating time of the supply target member, and recognizes an error when the temperature of the supply target member does not reach the temperature set by the control means during the heating time. The bonding apparatus according to claim 1, wherein:   The stage according to claim 2, further comprising a stage having a suction mechanism for sucking the supply target member, wherein when an error is recognized, the supply target member suctioned to the stage is sucked again through the suction mechanism. Bonding equipment.   The bonding apparatus according to claim 2, further comprising a holding mechanism that holds the supplied member against the stage, and when an error is recognized, the supplied member held by the holding mechanism is pressed again.   The bonding apparatus according to claim 2, wherein, when an error is recognized, the heating unit heats at a temperature different from the temperature set by the control unit. The work is a chip of a wafer, and the supply target member is a substrate serving as an island portion which is the supply target portion, and the bonding apparatus according to any one of claims 1 to 4,
A die bonder characterized by sequentially bonding chips to island portions of a substrate that has been transported to a bonding position that is a supply position. In a bonding method of heating a supply target member at a bonding position where a work is bonded to the supply target member, and bonding the work to the supply target member via an adhesive,
Set the temperature of the supplied member that can bond the work,
A bonding method comprising: measuring the temperature of the supply target member, and bonding a workpiece to the supply target member when the temperature of the supply target member reaches a set temperature.   The bonding method according to claim 7, wherein a heating time of the supply target member is set, and an error is recognized when the temperature of the supply target member does not reach the set temperature within the heating time.   9. The bonding method according to claim 8, wherein when an error is recognized, the supply target member sucked on the stage is sucked again through a suction mechanism that sucks the supply target member on the stage.   9. The bonding method according to claim 8, wherein when an error is recognized, the member to be supplied which is being pressed by the pressing mechanism that presses the member to be supplied to the stage is pressed again.   The bonding method according to claim 8, wherein when an error is recognized, the heating is performed at a temperature different from the set temperature.

Images