JP2020074053A5 - - Google Patents

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Publication number
JP2020074053A5
JP2020074053A5 JP2020026343A JP2020026343A JP2020074053A5 JP 2020074053 A5 JP2020074053 A5 JP 2020074053A5 JP 2020026343 A JP2020026343 A JP 2020026343A JP 2020026343 A JP2020026343 A JP 2020026343A JP 2020074053 A5 JP2020074053 A5 JP 2020074053A5
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Japan
Prior art keywords
shielding film
light
smoothing
photomask
film pattern
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JP2020026343A
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Japanese (ja)
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JP2020074053A (en
JP6806274B2 (en
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透明基板および前記透明基板上に形成され、所望の光学濃度（ＯＤ値）を有する遮光膜を有するフォトマスクブランクスを準備するフォトマスクブランクス準備工程と、A photomask blanks preparing step of preparing a photomask blanks having a transparent substrate and a light-shielding film having a desired optical density (OD value) formed on the transparent substrate;
前記遮光膜をエッチングすることにより遮光膜パターンを形成する遮光膜パターン形成工程と、 A light-shielding film pattern forming step of forming a light-shielding film pattern by etching the light-shielding film,
前記遮光膜パターンの表面を平滑化する平滑化処理工程と、を有し、 A smoothing treatment step of smoothing the surface of the light-shielding film pattern,
前記平滑化処理工程が、ドライエッチングにより平滑化する工程であることを特徴とするフォトマスクの製造方法。 The photomask manufacturing method, wherein the smoothing treatment step is a step of smoothing by dry etching. 前記ドライエッチングにより平滑化する工程が、塩素系のガス、フッ素系のガス、および酸素系のガスからなる群から選択される少なくとも一つのガスを用いてプラズマ処理を行う工程であることを特徴とする請求項１に記載のフォトマスクの製造方法。The step of smoothing by dry etching is a step of performing a plasma treatment using at least one gas selected from the group consisting of chlorine-based gas, fluorine-based gas, and oxygen-based gas. The method of manufacturing a photomask according to claim 1. 前記平滑化工程は、前記平滑化処理工程後の前記遮光膜パターンの表面の算術平均粗さ（Ｒａ）が０．４ｎｍ以下となるように行う工程である請求項１または請求項２に記載のフォトマスクの製造方法。The said smoothing process is a process performed so that the arithmetic mean roughness (Ra) of the surface of the said light shielding film pattern after the said smoothing process process may be 0.4 nm or less. Photomask manufacturing method. 前記遮光膜の材料がモリブデンシリサイド系材料であることを特徴とする請求項１から請求項３までのいずれかの請求項に記載のフォトマスクの製造方法。The photomask manufacturing method according to claim 1, wherein the material of the light shielding film is a molybdenum silicide-based material.
JP2020026343A 2015-02-16 2020-02-19 How to make photomasks, photomask blanks, and photomasks Active JP6806274B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015027498 2015-02-16
JP2015027498 2015-02-16

Related Parent Applications (1)

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JP2016027347A Division JP6665571B2 (en) 2015-02-16 2016-02-16 Photomask, photomask blanks, and photomask manufacturing method

Publications (3)

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JP2020074053A JP2020074053A (en) 2020-05-14
JP2020074053A5 true JP2020074053A5 (en) 2020-06-25
JP6806274B2 JP6806274B2 (en) 2021-01-06

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JP2016027347A Active JP6665571B2 (en) 2015-02-16 2016-02-16 Photomask, photomask blanks, and photomask manufacturing method
JP2020026343A Active JP6806274B2 (en) 2015-02-16 2020-02-19 How to make photomasks, photomask blanks, and photomasks

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Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
TW201823855A (en) * 2016-09-21 2018-07-01 日商Ｈｏｙａ股份有限公司 Method of manufacturing a photomask, photomask, and method of manufacturing a display device
JP7009746B2 (en) * 2017-02-15 2022-01-26 大日本印刷株式会社 HAZE removal method and photomask manufacturing method
JP7151774B2 (en) * 2018-09-14 2022-10-12 株式会社ニコン Phase shift mask blanks, phase shift mask, exposure method, device manufacturing method, phase shift mask blank manufacturing method, phase shift mask manufacturing method, exposure method, and device manufacturing method
JP2022114448A (en) * 2021-01-26 2022-08-05 Hoya株式会社 Mask blank, production method of transfer mask, and production method of semiconductor device
KR102444967B1 (en) * 2021-04-29 2022-09-16 에스케이씨솔믹스 주식회사 Blank mask and photomask using the same
KR102402742B1 (en) * 2021-04-30 2022-05-26 에스케이씨솔믹스 주식회사 Photomask blank and photomask using the same
KR102435818B1 (en) * 2021-09-03 2022-08-23 에스케이씨솔믹스 주식회사 Blank mask and photomask using the same
KR102475672B1 (en) * 2021-11-03 2022-12-07 에스케이씨솔믹스 주식회사 Blank mask and photomask using the same
KR102535171B1 (en) * 2021-11-04 2023-05-26 에스케이엔펄스 주식회사 Blank mask and photomask using the same
KR102660636B1 (en) 2021-12-31 2024-04-25 에스케이엔펄스 주식회사 Blank mask and photomask using the same

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
JPH1126355A (en) * 1997-07-07 1999-01-29 Toshiba Corp Exposure mask and manufacture of the same
JP2006018190A (en) * 2004-07-05 2006-01-19 Matsushita Electric Ind Co Ltd Photomask, method for forming resist pattern, and method for manufacturing master information carrier
JP2007279214A (en) * 2006-04-04 2007-10-25 Shin Etsu Chem Co Ltd Photomask blank and its manufacturing method, and photomask and its manufacturing method
WO2012086744A1 (en) * 2010-12-24 2012-06-28 Hoya株式会社 Mask blank and method of producing the same, and transfer mask and method of producing the same
JP2013178371A (en) * 2012-02-28 2013-09-09 Hoya Corp Method for removing thin film of substrate with thin film, method for manufacturing transfer mask, method for regenerating substrate and method for manufacturing mask blank
WO2014104276A1 (en) * 2012-12-28 2014-07-03 Hoya株式会社 Substrate for mask blank, substrate with multilayer reflective film, reflective type mask blank, reflective type mask, manufacturing method of substrate for mask blank and manufacturing method of substrate with multilayer reflective film as well as manufacturing method of semiconductor device

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