JP2020067640A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2020067640A JP2020067640A JP2018202120A JP2018202120A JP2020067640A JP 2020067640 A JP2020067640 A JP 2020067640A JP 2018202120 A JP2018202120 A JP 2018202120A JP 2018202120 A JP2018202120 A JP 2018202120A JP 2020067640 A JP2020067640 A JP 2020067640A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000003990 capacitor Substances 0.000 claims description 26
- 230000006866 deterioration Effects 0.000 abstract description 13
- 238000010586 diagram Methods 0.000 description 16
- 239000013256 coordination polymer Substances 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 9
- 241001270131 Agaricus moelleri Species 0.000 description 6
- 239000003086 colorant Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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Abstract
Description
20 表示デバイス
21 表示電源部
133 階調電圧生成部
1330 基本階調電圧生成部
1331 ガンマ補正部
CP、CQ キャパシタ
H0、H0a 変動電圧重畳部
LD EL素子
PC 表示セル
Q1、Q2 トランジスタ
Claims (8)
- 表示データにて表される輝度レベルに対応した駆動信号を受けるソースラインと、電源電圧に基づき前記ソースラインで受けた前記駆動信号に対応した輝度で発光する表示セルと、を含む表示デバイスを駆動する半導体装置であって、
ガンマ特性に沿った第1〜第k(kは2以上の整数)の代表階調電圧を生成し、前記第1〜第kの代表階調電圧に基づき第1〜第N(Nはkより大なる整数)の階調電圧を生成する階調電圧生成部と、
前記第1〜第Nの階調電圧のうちから前記表示データに対応した1つの階調電圧を選択し、選択した前記1つの階調電圧を示す信号を前記駆動信号として前記ソースラインに印加する駆動部と、
前記電源電圧に電圧変動が生じた場合に、前記第1〜第kの代表階調電圧のうちの少なくとも1つに前記電圧変動に対応した電圧変動を生じさせる変動電圧重畳部と、を有することを特徴とする半導体装置。 - 前記階調電圧生成部は、
互いに異なる電圧値を有する複数の基本階調電圧を生成する基本階調電圧生成部と、
前記複数の基本階調電圧のうちで赤色用のガンマ特性に沿ったk個を赤色用の第1〜第kの代表階調電圧とし、前記赤色用の第1〜第kの代表階調電圧に基づき赤色用の第1〜第Nの階調電圧を生成する赤ガンマ補正回路と、
前記複数の基本階調電圧のうちで緑色用のガンマ特性に沿ったk個を緑色用の第1〜第kの代表階調電圧とし、前記緑色用の第1〜第kの代表階調電圧に基づき緑色用の第1〜第Nの階調電圧を生成する緑ガンマ補正回路と、
前記複数の基本階調電圧のうちで青色用のガンマ特性に沿ったk個を青色用の第1〜第kの代表階調電圧とし、前記青色用の第1〜第kの代表階調電圧に基づき青色用の第1〜第Nの階調電圧を生成する青ガンマ補正回路と、を含み、
前記変動電圧重畳部は、前記赤ガンマ補正回路、前記緑ガンマ補正回路、及び前記青ガンマ補正回路の各々において、前記第1〜第kの代表階調電圧のうちの少なくとも1つに、前記電源電圧に生じた電圧変動に対応した電圧変動を生じさせることを特徴とする請求項1に記載の半導体装置。 - 前記第1〜第kの代表階調電圧を伝送する第1〜第kのラインを含み、
前記変動電圧重畳部は、自身の第1の電極に前記電源電圧が印加されており、自身の第2の電極が前記第1〜第kのラインのうちの少なくとも1つに接続されているキャパシタを含むことを特徴とする請求項1又は2に記載の半導体装置。 - 前記変動電圧重畳部は、
オペアンプと、
一端に前記第1〜第kの代表階調電圧のうちの1つが印加されており、他端が前記オペアンプの非反転入力端子に接続されている第1の抵抗と、
一端に前記電源電圧が印加されており、他端が前記オペアンプの非反転入力端子に接続されている第2の抵抗と、
一端に前記電源電圧の基準となる基準電源電圧が印加されており、他端が前記オペアンプの反転入力端子に接続されている第3の抵抗と、
一端に前記オペアンプの反転入力端子が接続されており、他端が前記オペアンプの出力端子に接続されている第4の抵抗と、を有することを特徴とする請求項1又は2に記載の半導体装置。 - 前記変動電圧重畳部は、
前記第1〜第kの代表階調電圧のうちで最大の電圧値を有する1つの代表階調電圧に、前記電源電圧に生じた電圧変動に対応した電圧変動を生じさせることを特徴とする請求項1〜4のいずれか1に記載の半導体装置。 - 前記表示セルは、
発光素子と、
前記ソースラインで受けた前記駆動信号を自身の第1の電極で受け、第2の電極に前記電源電圧が印加されている保持キャパシタと、
前記電源電圧がソースに印加されていると共に前記駆動信号がゲートに供給されており、前記駆動信号に応じた電流を前記発光素子に供給するトランジスタと、を含み、
前記変動電圧重畳部に含まれる前記キャパシタは、前記保持キャパシタの静電容量に対応した静電容量を有することを特徴とする請求項3に記載の半導体装置。 - 前記表示デバイスは、前記複数の表示セル各々に前記電源電圧を供給する電源供給ラインと、前記電源供給ラインに接続されている端子と、を含み、
前記キャパシタの前記第1の電極が前記端子に接続されていることを特徴とする請求項3又は6に記載の半導体装置。 - 前記変動電圧重畳部が、前記階調電圧生成部内に設けられていることを特徴とする請求項1〜7のいずれか1に記載の半導体装置。
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