JP2020064939A - Substrate processing device, substrate processing method, and recording medium - Google Patents

Abstract

To reduce the power use amount.SOLUTION: A substrate processing device according to an exemplary embodiment includes: a processing chamber which stores a substrate being the processing target; a heating plate which supports and heats the substrate in the processing chamber; an exhaust part which exhausts the gas from the processing chamber; a first temperature measurement part which measures the temperature of the heating plate; a second temperature measurement part which measures the temperature in the processing chamber; and a control part which controls the heating plate and the exhaust part. The control part executes a first control of controlling the exhaust part so that an exhaust amount from the processing chamber becomes a first exhaust amount and controlling the heating plate so that a measurement value by the first temperature measurement part gets closer to a first target value, and a second control of controlling the exhaust part so that the exhaust amount becomes a second exhaust amount smaller than the first exhaust amount and controlling the heating plate so that a measurement value by the second temperature measurement part gets closer to a second target value.SELECTED DRAWING: Figure 3

Description

  An exemplary embodiment of the present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium.

  Patent Document 1 discloses a hot plate that applies heat to a substrate, a support member that supports the substrate, a distance sensor that measures the distance between the hot plate and the substrate, and a temperature sensor that measures the temperature of the hot plate. And a substrate processing apparatus including the unit. The control unit of the substrate processing apparatus controls the temperature of the hot plate based on the separation distance measured by the distance sensor and the temperature of the hot plate measured by the temperature sensor.

JP, 2005-177024, A

  The exemplary embodiments of the present disclosure provide a substrate processing apparatus, a substrate processing method, and a storage medium capable of reducing power consumption.

  In one exemplary embodiment, a substrate processing apparatus is provided. This substrate processing apparatus includes a processing chamber that accommodates a substrate to be processed, a hot plate that supports and heats the substrate in the processing chamber, an exhaust unit that discharges gas from the processing chamber, and a first hot plate that measures the temperature of the hot plate. It has 1 temperature measurement part, a 2nd temperature measurement part which measures the temperature in a process chamber, and a control part which controls a hot plate and an exhaust part. The control unit controls the exhaust unit so that the exhaust amount from the processing chamber becomes the first exhaust amount, and also controls the hot plate so that the measured value by the first temperature measuring unit approaches the first target value. Controlling and controlling the exhaust part so that the exhaust amount becomes a second exhaust amount smaller than the first exhaust amount, and controlling the hot plate so that the measurement value by the second temperature measuring part approaches the second target value. The second control is executed.

  According to an exemplary embodiment of the present disclosure, a substrate processing apparatus, a substrate processing method, and a storage medium capable of reducing power consumption are provided.

FIG. 1 is a perspective view illustrating a substrate processing system according to an exemplary embodiment. FIG. 2 is a schematic diagram showing an example of the internal configuration of the substrate processing system shown in FIG. FIG. 3 is a schematic diagram showing an example of the processing module. FIG. 4 is a block diagram showing an example of a main part of the substrate processing system. FIG. 5 is a schematic diagram showing an example of the hardware configuration of the control device. FIG. 6 is a flowchart showing an example of the substrate processing method. FIG. 7 is a timing chart for explaining an example of the substrate processing method. 8A and 8B are timing charts for explaining the substrate processing method according to the comparative example. FIG. 9 is a flowchart showing another example of the substrate processing method. FIG. 10 is a timing chart for explaining another example of the substrate processing method.

  Various exemplary embodiments are described below.

  In one exemplary embodiment, a substrate processing apparatus is provided. This substrate processing apparatus includes a processing chamber that accommodates a substrate to be processed, a hot plate that supports and heats the substrate in the processing chamber, an exhaust unit that discharges gas from the processing chamber, and a first hot plate that measures the temperature of the hot plate. It has 1 temperature measurement part, a 2nd temperature measurement part which measures the temperature in a process chamber, and a control part which controls a hot plate and an exhaust part. The control unit controls the exhaust unit so that the exhaust amount from the processing chamber becomes the first exhaust amount, and also controls the hot plate so that the measured value by the first temperature measuring unit approaches the first target value. Controlling and controlling the exhaust part so that the exhaust amount becomes a second exhaust amount smaller than the first exhaust amount, and controlling the hot plate so that the measurement value by the second temperature measuring part approaches the second target value. The second control is executed.

  In this substrate processing apparatus, since the second exhaust amount is smaller than the first exhaust amount, the electric power when exhausting the second exhaust amount by the second control is lower than the electric power when exhausting the first exhaust amount by the first control. Becomes smaller. This makes it possible to reduce the power consumption as compared with the case where the first control is continued without executing the second control.

  The temperature of the substrate supported by the hot plate is also affected by the temperature inside the processing chamber. Therefore, when the amount of gas discharged from the processing chamber (exhaust amount) decreases, the temperature in the processing chamber rises, affecting the temperature of the substrate supported by the hot plate. In the above-described substrate processing apparatus, when the exhaust amount from the processing chamber changes from the first exhaust amount to the second exhaust amount that is smaller than the first exhaust amount, the measured value of the temperature in the processing chamber is maintained at the second target value. The hot plate is controlled as described above. As a result, the temperature in the processing chamber can be kept within a desired range even when the exhaust amount decreases, so that when the exhaust amount is returned to the first exhaust amount, the processing chamber changes as the exhaust amount changes. The influence of the temperature change on the substrate is reduced. Therefore, it becomes possible to control the temperature of the substrate with higher accuracy while reducing the power consumption.

  In an exemplary embodiment, the control unit may perform the first control during the heat treatment including heating the substrate by the hot plate and perform the second control during the non-heat treatment of the substrate. In this case, since the temperature in the processing chamber is maintained in a desired range even while the heat treatment is not performed, when the exhaust amount is returned to the first exhaust amount and the heat treatment is performed while reducing the power usage amount, It is possible to control the temperature of the substrate more accurately.

  In one exemplary embodiment, the control unit controls the exhaust unit so that the exhaust amount becomes the second exhaust amount, and controls the hot plate so that the measured value by the first temperature measuring unit approaches the first target value. You may further perform the 3rd control which controls. The control unit may switch from the second control to the third control when the start of the heat treatment of the substrate is approaching during the non-heat treatment of the substrate. In this case, since the third control for bringing the temperature of the hot plate closer to the first target value is started before the start of the heat treatment, it is possible to quickly adjust the temperature of the hot plate to the first target value at the start of the heat treatment. Becomes

  In one exemplary embodiment, the control unit may set the second target value such that the difference between the second target value and the temperature in the processing chamber when the first control is executed is included in the predetermined range. In this case, the temperature inside the processing chamber is kept within a predetermined range regardless of the exhaust amount, so that it is possible to control the temperature of the substrate more accurately while reducing the power consumption.

  In one exemplary embodiment, the processing chamber may include a lid configured to surround a mounting surface of the substrate on the hot plate. The second temperature measuring unit may measure the temperature of the lid as the temperature inside the processing chamber. For example, even if the outside air enters the processing chamber temporarily, the influence on the temperature of the lid is small. Since the temperature of the lid is measured in the above configuration, the temperature in the processing chamber can be stably measured. Further, it is considered that the ambient temperature around the substrate supported by the hot plate is easily influenced by the members surrounding the substrate. Therefore, by measuring the temperature of the lid configured to surround the substrate and maintaining the measured value of the temperature of the lid at the second target value, the ambient temperature around the substrate is accurately adjusted. It As a result, it is possible to control the temperature of the substrate more accurately while reducing the amount of power used.

  In another exemplary embodiment, a substrate processing method is provided. In this substrate processing method, the amount of gas exhausted from a processing chamber accommodating a substrate to be processed is controlled to be a first amount, and the temperature of a hot plate that supports and heats the substrate is measured. Controlling the value measured by the temperature measuring unit to approach the first target value, controlling the exhaust amount to a second exhaust amount smaller than the first exhaust amount, and measuring the temperature in the processing chamber. And controlling the measured value by the two-temperature measuring unit to approach the second target value.

  In still another exemplary embodiment, there is provided a computer-readable storage medium that stores a program for causing an apparatus to execute the substrate processing method described above.

  Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In the description, the same elements or elements having the same function will be denoted by the same reference symbols, without redundant description.

[Substrate processing system]
The substrate processing system 1 is a system for forming a photosensitive coating on a substrate, exposing the photosensitive coating, and performing the phenomenon of the photosensitive coating. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive film is, for example, a resist film. The substrate processing system 1 includes a coating / developing device 2 and an exposure device 3. The exposure device 3 performs an exposure process on a resist film (photosensitive film) formed on the wafer W (substrate). Specifically, an energy ray is applied to the exposed portion of the resist film by a method such as immersion exposure. The coating / developing device 2 performs a process of forming a resist film on the surface of the wafer W (substrate) before the exposure process by the exposure device 3 and a developing process of the resist film after the exposure process.

[Substrate processing equipment]
The configuration of the coating / developing apparatus 2 will be described below as an example of the substrate processing apparatus. As shown in FIGS. 1 and 2, the coating / developing device 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device 100 (control unit).

  The carrier block 4 introduces the wafer W into the coating / developing apparatus 2 and guides the wafer W from the coating / developing apparatus 2. For example, the carrier block 4 can support a plurality of carriers C for the wafer W and incorporates the transfer arm A1. The carrier C accommodates a plurality of circular wafers W, for example. The transfer arm A1 takes out the wafer W from the carrier C, transfers it to the processing block 5, receives the wafer W from the processing block 5, and returns it into the carrier C.

  The processing block 5 has a plurality of processing modules 11, 12, 13, and 14. The processing modules 11, 12, 13, and 14 incorporate a coating unit U1, a heat treatment unit U2, and a transfer arm A3 that transfers the wafer W to these units. The coating unit U1 coats the processing liquid on the surface of the wafer W. The heat treatment unit U2 contains, for example, a heat plate and a cooling plate, heats the wafer W by the heat plate, and cools the heated wafer W by the cooling plate to perform heat treatment.

  The processing module 11 forms a lower layer film on the surface of the wafer W by the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 11 coats the processing liquid for forming the lower layer film on the wafer W. The heat treatment unit U2 of the treatment module 11 performs various heat treatments associated with the formation of the lower layer film.

  The processing module 12 forms a resist film on the lower layer film by the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 12 coats the processing liquid for forming the resist film on the lower layer film. The heat treatment unit U2 of the processing module 12 performs various heat treatments associated with the formation of the resist film. Specific examples of the heat treatment include a heat treatment (PAB: Pre Applied Bake) for curing the coating film to form a resist film.

  The processing module 13 forms an upper layer film on the resist film by the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 13 coats the liquid for forming the upper layer film on the resist film. The heat treatment unit U2 of the treatment module 13 performs various heat treatments associated with the formation of the upper layer film.

  The processing module 14 develops the resist film after exposure by the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 14 coats the surface of the exposed wafer W with the developing solution, and then rinses the developing solution with the rinse solution to develop the resist film. The heat treatment unit U2 performs various heat treatments associated with the development processing. Specific examples of the heat treatment include a heat treatment before the development treatment (PEB: Post Exposure Bake) and a heat treatment after the development treatment (PB: Post Bake).

  A shelf unit U10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is divided into a plurality of cells arranged in the vertical direction. A lifting arm A7 is provided near the shelf unit U10. The elevating arm A7 elevates and lowers the wafer W between the cells of the shelf unit U10.

  A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is divided into a plurality of cells arranged in the vertical direction.

  The interface block 6 transfers the wafer W to and from the exposure apparatus 3. For example, the interface block 6 has a built-in transfer arm A8 and is connected to the exposure apparatus 3. The transfer arm A8 transfers the wafer W arranged on the shelf unit U11 to the exposure apparatus 3, receives the wafer W from the exposure apparatus 3, and returns the wafer W to the shelf unit U11.

  The control device 100 controls the coating / developing device 2 so as to execute the coating / developing process in the following procedure, for example. First, the controller 100 controls the transfer arm A1 so as to transfer the wafer W in the carrier C to the shelf unit U10, and controls the elevating arm A7 so that the wafer W is arranged in the cell for the processing module 11.

  Next, the control device 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to the coating unit U1 and the thermal processing unit U2 in the processing module 11. Further, the control device 100 controls the coating unit U1 and the heat treatment unit U2 so as to form the lower layer film on the surface of the wafer W. After that, the control device 100 controls the transfer arm A3 so as to return the wafer W on which the lower layer film is formed to the shelf unit U10, and controls the elevating arm A7 so as to arrange the wafer W in the cell for the processing module 12. .

  Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 12. Further, the controller 100 controls the coating unit U1 and the heat treatment unit U2 so as to form a resist film on the surface of the wafer W. After that, the controller 100 controls the transfer arm A3 so as to return the wafer W to the shelf unit U10, and controls the elevating arm A7 so as to arrange the wafer W in the cell for the processing module 13.

  Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to each unit in the processing module 13. Further, the control device 100 controls the coating unit U1 and the heat treatment unit U2 so as to form an upper layer film on the resist film of the wafer W. After that, the controller 100 controls the transfer arm A3 to transfer the wafer W to the shelf unit U11.

  Next, the controller 100 controls the transfer arm A8 so that the wafer W on the shelf unit U11 is sent to the exposure apparatus 3. After that, the controller 100 controls the transfer arm A8 so as to receive the exposed wafer W from the exposure apparatus 3 and arrange the wafer W in the cell for the processing module 14 in the shelf unit U11.

  Next, the control device 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U11 to each unit in the processing module 14, and the coating unit U1 and the coating unit U1 so that the resist film of the wafer W is developed. Control the heat treatment unit U2. After that, the controller 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and controls the elevating arm A7 and the transfer arm A1 to return the wafer W into the carrier C. With the above, the coating / developing process is completed.

  Note that the specific configuration of the substrate processing apparatus is not limited to the configuration of the coating / developing apparatus 2 illustrated above. The substrate processing apparatus may be any one as long as it includes the heat treatment unit U2 and the control device 100 capable of controlling the heat treatment unit U2.

(Heat treatment unit)
Next, the heat treatment unit U2 will be described in detail with reference to FIG. As shown in FIG. 3, the heat treatment unit U2 includes a processing chamber 20, a hot plate temperature measuring unit 50 (first temperature measuring unit), an indoor temperature measuring unit 60 (second temperature measuring unit), and an exhaust unit 70. And an exhaust unit 80.

  The processing chamber 20 accommodates the wafer W to be heat-treated. In other words, the heat treatment of the wafer W is performed in the processing chamber 20. The processing chamber 20 has a housing 21, a temperature adjusting mechanism 30, and a heating mechanism 40. Note that FIG. 3 shows a part of the configuration of the heat treatment unit U2, and does not show the entire configuration of the heat treatment unit U2.

  The housing 21 is a processing container that houses the temperature adjusting mechanism 30, the heating mechanism 40, the hot plate temperature measuring unit 50, and the indoor temperature measuring unit 60. A loading port 22 for loading the wafer W is opened on the side wall of the housing 21. The housing 21 has a floor plate 23 that divides the inside of the housing 21 into an upper region and a lower region. The upper region is the moving region of the wafer W, and the lower region is the other region.

  The temperature adjusting mechanism 30 is a mechanism that adjusts the temperature of the wafer W in the processing chamber 20 to a predetermined temperature. The adjustment of the temperature of the wafer W in the temperature adjustment mechanism 30 may be partially included in the heat treatment in the heat treatment unit U2. The temperature adjusting mechanism 30 transfers the wafer W to and from the external transfer arm A3. The temperature adjusting mechanism 30 includes a temperature adjusting plate 31, a connecting bracket 32, and a driving mechanism 33.

  The temperature adjustment plate 31 is a plate that adjusts the temperature of the mounted wafer W. Specifically, the temperature adjusting plate 31 is a cool plate on which the wafer W heated by the heating mechanism 40 is placed and which cools the wafer W to a predetermined temperature. For example, the temperature adjustment plate 31 may be formed in a substantially disc shape. The temperature adjustment plate 31 may be made of a metal having a high thermal conductivity, such as aluminum, silver, or copper. The temperature adjustment plate 31 may be made of the same material from the viewpoint of preventing deformation due to heat. Inside the temperature adjusting plate 31, a cooling flow path (not shown) for circulating cooling water or cooling gas is formed.

  The connection bracket 32 is connected to the temperature adjustment plate 31. The drive mechanism 33 operates based on an instruction from the control device 100 to move the connecting bracket 32. The connecting bracket 32 moves in the housing 21 by the drive mechanism 33. Specifically, the connection bracket 32 moves along a guide rail (not shown) extending between the carry-in port 22 of the housing 21 and the vicinity of the heating mechanism 40. When the connecting bracket 32 moves along the guide rail, the temperature adjusting plate 31 moves between the carry-in port 22 and the heating mechanism 40. The connection bracket 32 may be made of a metal having a high thermal conductivity, such as aluminum, silver, or copper.

  The heating mechanism 40 is a mechanism that heats the wafer W in the processing chamber 20. The heat treatment for the wafer W in the heating mechanism 40 is included in a part of the heat treatment in the heat treatment unit U2. The heating mechanism 40 includes a support base 41, a heating plate 42, a heater 43, a chamber 44 (lid), a lifting mechanism 45, a support pin 46, and a lifting mechanism 47.

  The support base 41 has a cylindrical shape with a recess formed in the center. The support base 41 supports the hot plate 42. The heat plate 42 is formed, for example, in a substantially disc shape, and is housed in the recess of the support base 41. The heating plate 42 has a mounting surface 42a. The hot plate 42 supports the wafer W by mounting the wafer W to be processed on the mounting surface 42a. The heating plate 42 heats the placed wafer W. A heater 43 for heating the heating plate 42 is provided on the lower surface of the heating plate 42 opposite to the mounting surface 42a. For example, the heater 43 is composed of a resistance heating element. The heater 43 generates heat due to the current flowing to the heater 43. Then, the heat from the heater 43 is transferred to raise the temperature of the heating plate 42. A current having a value according to an instruction from the control device 100 may flow through the heater 43, or a voltage having a value according to an instruction from the control device 100 may be applied and a current according to the voltage value may flow. Good. The heater 43 may be embedded in the heating plate 42. The heating plate 42 can be made of, for example, a metal having a high thermal conductivity such as aluminum, silver, or copper, but if the heat from the heater 43 can be transmitted to heat the wafer W, It may be composed of any shape and material.

  The chamber 44 is configured to surround the mounting surface 42 a of the wafer W on the heating plate 42. The chamber 44 has a top plate portion 44a and a foot portion 44b. The top plate portion 44a is formed in a disk shape having a diameter similar to that of the support base 41. The top plate portion 44a is arranged so as to face the mounting surface 42a of the heat plate 42 in the vertical direction. The foot portion 44b is configured to extend downward from the outer edge of the top plate portion 44a. The elevating mechanism 45 is a mechanism that elevates and lowers the chamber 44 according to an instruction from the control device 100. When the chamber 44 is moved up by the elevating mechanism 45, the space for heating the wafer W is opened, and when the chamber 44 is moved down, the space for heating the wafer W is closed. .

  The support pins 46 extend in the up-down direction so as to penetrate the support base 41 and the heat plate 42, and support the wafer W from below. The support pins 46 move up and down to arrange the wafer W at a predetermined position. The support pins 46 transfer the wafer W to and from the temperature adjustment plate 31 that transfers the wafer W. The support pins 46 may be composed of, for example, three pins arranged at equal intervals in the circumferential direction. The elevating mechanism 47 is a mechanism that elevates and lowers the support pin 46 according to an instruction from the control device 100. The elevating mechanism 47 is configured to bring the wafer W closer to the hot plate 42 and to elevate the wafer W (specifically, the support pins 46 that support the wafer W) so that the wafer W is placed on the hot plate 42. Has been done.

  The hot plate temperature measuring unit 50 measures the temperature of the hot plate 42. As the hot plate temperature measuring unit 50, for example, a temperature sensor may be used. The hot plate temperature measuring unit 50 may measure the temperature of the surface portion of the hot plate 42, or may measure the temperature inside the hot plate 42. The hot plate temperature measuring unit 50 may be provided at any location as long as it can measure the temperature of the hot plate 42. For example, the hot plate temperature measuring unit 50 may be provided on the hot plate 42 or may be embedded in the hot plate 42.

  The indoor temperature measuring unit 60 measures the temperature inside the processing chamber 20. As the room temperature measuring unit 60, for example, a temperature sensor may be used. In the present embodiment, the indoor temperature measurement unit 60 measures the temperature of the member provided around the wafer W supported by the heating plate 42 as the temperature inside the processing chamber 20. Further, in the present embodiment, the indoor temperature measuring unit 60 measures the temperature of the chamber 44 as the temperature of the member provided around the wafer W. However, as the temperature of the member provided around the wafer W, the temperature of the member other than the chamber 44 may be measured. When the indoor temperature measuring unit 60 measures the temperature of the chamber 44, the indoor temperature measuring unit 60 may measure the temperature at the outer or inner surface portion of the chamber 44, or measure the temperature inside the chamber 44. Good. In this case, the indoor temperature measuring unit 60 may be provided at any location as long as it can measure the temperature of the chamber 44. For example, the indoor temperature measuring unit 60 may be provided on the surface of the chamber 44, or may be embedded in the chamber 44 (for example, the top plate portion 44a).

  Each of the hot plate temperature measurement unit 50 and the indoor temperature measurement unit 60 may repeatedly measure the temperature of the measurement target at a predetermined interval, and measures the temperature of the measurement target according to an instruction from the control device 100. Good. Each of the hot plate temperature measuring unit 50 and the indoor temperature measuring unit 60 outputs the measured value to the control device 100. For example, each of the hot plate temperature measuring unit 50 and the room temperature measuring unit 60 may output the measured temperature as an analog value. Each of the hot plate temperature measuring unit 50 and the room temperature measuring unit 60 may be a thermistor, and may output a voltage value corresponding to the temperature of the measurement target to the control device 100 as information regarding the temperature.

  The exhaust unit 70 exhausts the gas from the processing chamber 20. For example, the exhaust unit 70 exhausts gas from the processing chamber 20 to the outside of the heat treatment unit U2 (coating / developing apparatus 2). The exhaust part 70 includes an exhaust duct 71 and an opening / closing part 72. The exhaust duct 71 connects the space in the processing chamber 20 (the space partitioned by the housing 21) and the discharge destination. The opening / closing part 72 is provided on the flow path of the exhaust duct 71. The opening / closing unit 72 switches the flow path of the exhaust duct 71 to an open state or a closed state according to an instruction from the control device 100. The opening / closing part 72 is, for example, a solenoid valve (electromagnetic valve). By setting the opening / closing part 72 to the open state, the flow path of the exhaust duct 71 is switched from the blocked state to the open state. By setting the opening / closing part 72 to the closed state, the flow path of the exhaust duct 71 is switched from the open state to the cutoff state.

  The exhaust unit 80 exhausts gas from a space defined by the support 41 and the chamber 44 (hereinafter referred to as a space inside the chamber 44). The space inside the chamber 44 is included in the space inside the processing chamber 20. For example, the exhaust unit 80 exhausts gas from the inside of the chamber 44 to the outside of the heat treatment unit U2 (coating / developing apparatus 2). The exhaust part 80 includes an exhaust duct 81 and an opening / closing part 82. The exhaust duct 81 connects the space inside the chamber 44 and the discharge destination. The exhaust duct 81 may be connected to the top plate portion 44a of the chamber 44 at a position different from the position where the indoor temperature measuring unit 60 is provided. The opening / closing part 82 is provided on the flow path of the exhaust duct 81. The opening / closing part 82 switches the flow path of the exhaust duct 81 to an open state or a closed state according to an instruction from the control device 100. The opening / closing part 82 is, for example, a solenoid valve (electromagnetic valve). By setting the opening / closing part 82 to the open state, the flow path of the exhaust duct 81 is switched from the blocked state to the open state. By setting the opening / closing part 82 to the closed state, the flow path of the exhaust duct 81 is switched from the open state to the closed state.

  The total exhaust amount of gas exhausted from the exhaust unit 70 and the exhaust unit 80 can be changed by controlling the open / closed states of the open / close units 72 and 82. By changing the open / closed state of the opening / closing parts 72 and 82, the total exhaust amount of the gas exhausted from the exhaust part 70 and the exhaust part 80 is changed to a first exhaust amount and a second exhaust amount smaller than the first exhaust amount. Can be switched to. In the present embodiment, it is assumed that the total exhaust amount becomes the first exhaust amount when both the opening / closing parts 72 and 82 are set to the open state. Further, it is assumed that the total exhaust amount becomes the second exhaust amount when both the opening / closing sections 72 and 82 are set to the closed state. That is, the first exhaust amount and the second exhaust amount described in the present embodiment refer to the total exhaust amount of the gas exhausted from both the exhaust unit 70 and the exhaust unit 80. When the opening / closing parts 72 and 82 are set to the closed state, the exhaust part 70 and the exhaust part 80 stop discharging gas (exhaust) from the processing chamber 20 (hereinafter, referred to as exhaust stop state). Therefore, the second displacement is substantially equal to zero. Even in the exhaust stopped state, a minute amount of gas leakage (exhaust) caused by the structure of the opening / closing portions 72 and 82 may occur. In the initial state before the coating / developing apparatus 2 is powered on and the processing of the wafer W is started, the opening / closing sections 72 and 82 may be set to the closed state.

  In order to perform the heat treatment on the wafer W in a clean state, the gas is exhausted from the processing chamber 20 including the space inside the chamber 44 by the exhaust units 70 and 80. For example, the evacuation by the evacuation unit 70 is performed to prevent particles generated in the heat treatment unit U2 during the heat treatment of the wafer W from falling onto the wafer W. For example, the evacuation by the evacuation unit 80 is performed to prevent sublimates generated by the heat treatment of the wafer W from adhering to the wafer W again.

(Control device)
As shown in FIG. 4, the control device 100 has a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are merely the functions of the control device 100 divided into a plurality of modules for convenience, and do not necessarily mean that the hardware configuring the control device 100 is divided into such modules. Each functional module is not limited to one that is realized by executing a program, but is realized by a dedicated electric circuit (for example, a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates the electric circuit. May be.

  The reading unit M1 reads the program from the computer-readable storage medium RM. The storage medium RM stores a program for operating each unit of the substrate processing system 1. The storage medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.

  The storage unit M2 stores various data. The storage unit M2 is input by the operator via, for example, a program read from the storage medium RM in the reading unit M1, various data when processing the wafer W (so-called processing recipe), and an external input device (not shown). Stores setting data, etc.

  The processing unit M3 processes various data. The processing unit M3 generates, for example, an operation signal for operating the coating unit U1 and the heat treatment unit U2 (the heating mechanism 40 and the exhaust units 70 and 80) based on various data stored in the storage unit M2.

  The instruction unit M4 transmits the operation signal generated by the processing unit M3 to various devices. For example, the operation signal transmitted to the heating mechanism 40 may include a signal indicating the value of current flowing through the heater 43. Alternatively, the instruction unit M4 may output a current having a current value flowing through the heater 43 determined by the processing unit M3 to the heater 43 via the digital-analog conversion circuit.

  The hardware of the control device 100 includes, for example, one or a plurality of control computers. For example, the control device 100 has the circuit 120 shown in FIG. The circuit 120 includes one or more processors 121, a memory 122, a storage 123, an input / output port 124, and a timer 125. The storage 123 has a computer-readable storage medium such as a hard disk. The storage medium stores a program for causing the exposure / development apparatus 2 to execute a substrate processing procedure described later. The storage medium may be a removable medium such as a non-volatile semiconductor memory, a magnetic disk or an optical disk. The memory 122 temporarily stores the program loaded from the storage medium of the storage 123 and the calculation result by the processor 121. The processor 121 configures each functional module described above by executing the above program in cooperation with the memory 122. The input / output port 124 inputs / outputs an electric signal to / from each unit of the substrate processing system 1 according to a command from the processor 121. The timer 125 measures elapsed time by counting, for example, a reference pulse having a constant cycle.

  The controller 100 controls the coating unit U1 and the heat treatment unit U2 (the heating mechanism 40 and the exhaust units 70 and 80) included in the substrate processing system 1 with the above-described configuration. The control device 100 may also control other units not shown in FIG. The configuration of the control device 100 described above is an example, and the present invention is not limited to the above.

[Substrate processing method]
Next, with reference to FIG. 6, as an example of the substrate processing method, a procedure of exhausting the inside of the processing chamber 20 and adjusting the temperature of the hot plate 42 during the heat treatment and the non-heat treatment of the wafer W will be described. Each step shown in FIG. 6 is executed by the control device 100 controlling each unit constituting the coating / developing device 2. For example, this exhaust and temperature adjustment procedure is started when the coating / developing apparatus 2 is turned on and various processing of the wafer W is started.

  First, the control device 100 executes step S01. In step S01, the control device 100 sets the opening / closing sections 72 and 82 to the open state to discharge the gas from the inside of the processing chamber 20 at the first exhaust amount. In the following steps, the control device 100 maintains the state in which the gas is discharged from the inside of the processing chamber 20 at the first exhaust amount until the opening / closing sections 72 and 82 are set to the closed state.

  Next, the control device 100 executes step S02. In step S02, the control device 100 starts the temperature control of the heating plate 42. Specifically, the control device 100 starts control to bring the temperature of the heating plate 42 close to a temperature (first target value) suitable for the heating process of the wafer W.

  Next, the control device 100 executes step S03. In step S03, the controller 100 carries the wafer W into the processing chamber 20. Specifically, the control device 100 drives the transfer arm A3, the driving mechanism 33, and the elevating mechanism 47, so that the heat plate 42 in the processing chamber 20 is processed from outside the heat treatment unit U2 such as the shelf unit U10. The wafer W is moved. Next, the control device 100 executes step S04. In step S04, control device 100 starts heat treatment including heat treatment on wafer W.

  Next, the control device 100 executes steps S05 and S06. In step S05, the control device 100 acquires the measured value of the temperature of the hot plate 42 from the hot plate temperature measuring unit 50. In step S06, the control device 100 controls the hot plate 42 so that the temperature of the hot plate 42 is maintained at the first target value based on the measured value from the hot plate temperature measuring unit 50. For example, the control device 100 calculates a difference value between the measurement value from the hot plate temperature measuring unit 50 and the first target value, and performs PID (Proportional-Integral-Differential) control based on the calculated difference value or the like. The temperature of the heating plate 42 (the value of the current flowing through the heater 43) is adjusted with.

  In this way, the control device 100 executes the first control during the heat treatment of the wafer W. In the first control, the control device 100 exhausts the gas from the inside of the processing chamber 20 with the first exhaust amount (step S01), and at the same time, the hot plate temperature measurement unit 50 measures the hot plate so that the measured value approaches the first target value. The temperature of 42 is controlled (steps S02, S05, S06). In the present embodiment, the “heat treatment” of the wafer W includes a heat treatment by the heating mechanism 40 (hot plate 42) and a temperature adjustment (cooling) treatment by the temperature adjustment mechanism 30. Note that the control device 100 may acquire the measurement value obtained by the indoor temperature measurement unit 60 when executing the first control.

  Next, the control device 100 executes step S07. In step S07, it is determined whether the heat treatment on the wafer W to be processed is completed. For example, in the control device 100, after the wafer W is heated by the heating mechanism 40 in the processing chamber 20 and the temperature of the wafer W is adjusted to the predetermined temperature by the temperature adjusting mechanism 30, the heat treatment for the processing target wafer W is completed. to decide. When the heat treatment is not completed, the control device 100 performs steps S05 and S06 again. In other words, control device 100 repeats steps S05 and S06 until the heat treatment of wafer W is completed. As a result, the control device 100 maintains the temperature of the heating plate 42 at the first target value. Note that maintaining the temperature of the heating plate 42 at the first target value means continuing the state in which the temperature of the heating plate 42 is included in the range in which the allowable error is added to or subtracted from the first target value.

  On the other hand, when it is determined in step S07 that the heat treatment for the wafer W to be processed is completed, the control device 100 executes step S08. In step S08, the control device 100 controls the temperature adjustment mechanism 30 and the transfer arm A3, for example, to carry out the wafer W after the heat treatment from the heat treatment unit U2. As a result, the heat treatment unit U2 shifts to the standby state (non-heat treatment state) in which the heat treatment of the wafer W is not performed. For example, in the standby state, the next wafer W to be processed is determined, waiting for the wafer W to be loaded into the thermal processing unit U2, and the wafer W to be processed next is not determined. Waiting until the next processing target wafer W is determined may be included. The standby state may be defined as a state in which the wafer W to be processed does not exist in the heat treatment unit U2.

  Next, the control device 100 executes step S09. In step S09, the control device 100 sets the second target value as the target temperature in the processing chamber 20. For example, the control device 100 may store a predetermined second target value. Alternatively, the control device 100 may set the second target value according to the temperature in the processing chamber 20 at the time of executing the first control. Specifically, the control device 100 sets the second target value such that the difference between the second target value and the temperature inside the processing chamber 20 during the first control is within a predetermined range (for example, several degrees Celsius). Good. For example, the control device 100 may use the measurement value acquired from the indoor temperature measuring unit 60 during the execution of the first control as the temperature inside the processing chamber 20 during the execution of the first control. In this case, the second target value may be an average value of a plurality of measured values by the indoor temperature measuring unit 60 at the time of executing the first control, or may be a measured value at the end time of the first control. Note that the control device 100 may set the second target value once according to the temperature of the processing chamber 20 and then maintain the set value of the second target value until the substrate processing procedure ends.

  Next, the control device 100 executes step S10. In step S10, the control device 100 discharges the gas from the inside of the processing chamber 20 at the second exhaust amount. In the present embodiment, the control device 100 sets the open / close sections 72 and 82 to the closed state to stop the discharge of gas from the inside of the processing chamber 20. It should be noted that in the subsequent steps, the control device 100 maintains the state in which the second exhaust amount is exhausted (the gas discharge is stopped) until the opening / closing sections 72, 82 are set to the open state.

  Next, the control device 100 executes steps S11 and S12. In step S11, the control device 100 acquires the temperature inside the processing chamber 20. Specifically, the control device 100 acquires the measured value from the indoor temperature measuring unit 60. In step S12, the control device 100 controls the hot plate 42 so that the temperature in the processing chamber 20 is maintained at the second target value based on the measurement value from the indoor temperature measurement unit 60. For example, the control device 100 calculates the difference value between the measured value from the indoor temperature measuring unit 60 and the second target value, and performs the PID control based on the calculated difference value or the like to determine the temperature of the hot plate 42 (heater). The current value flowing through 43) is adjusted.

  In this way, the control device 100 executes the second control in the standby state (when the heat treatment is not performed on the wafer W) (when the heat treatment is not performed). In the second control, the control device 100 stops the discharge of the gas from the inside of the processing chamber 20 (step S10), and the temperature of the hot plate 42 so that the measured value by the indoor temperature measuring unit 60 approaches the second target value. Is controlled (steps S11 and S12). In the first control, the hot plate 42 is controlled so that the measured value of the temperature of the hot plate 42 measured by the hot plate temperature measuring unit 50 approaches the first target value, whereas in the second control, The hot plate 42 is controlled so that the measured value of the temperature inside the processing chamber 20 measured by the indoor temperature measuring unit 60 approaches the second target value. That is, in the first control and the second control, the control target is the temperature of the heating plate 42 (current value to the heater 43) in common, but the measured value and the target value for determining the temperature adjustment amount Are different from each other.

  Next, the control device 100 executes step S13. In step S13, control device 100 determines whether or not the standby state has ended. The standby state is ended, for example, when the next heat treatment is started. That is, the control device 100 determines whether or not the standby state has ended based on whether or not the heat treatment of the next wafer W is started in the heat treatment unit U2. For example, the control device 100 may determine that the standby state has ended in the thermal processing unit U2 when the transportation arm A3 starts the transportation of the next wafer W to be processed toward the thermal processing unit U2. . When it is determined in step S13 that the standby state has not ended, the control device 100 repeats steps S11 and S12. As a result, the control device 100 maintains the temperature of the processing chamber 20 at the second target value while the heat treatment is not performed. Note that maintaining the temperature in the processing chamber 20 at the second target value means maintaining a state in which the temperature in the processing chamber 20 is included in a range obtained by adding or subtracting an allowable error to or from the second target value.

  On the other hand, when it is determined in step S13 that the standby state has ended, the control device 100 executes steps S01 to S13 again. The controller 100 may repeat the processes of steps S01 to S13 while the heat treatment of a predetermined number of wafers W is performed. It should be noted that the control device 100 does not execute steps S08 to S13 when the heat treatment for the wafer W to be processed last out of the predetermined number of wafers W is completed, and after executing step S07, This exhaust and temperature adjustment procedure may be terminated.

  Next, with reference to FIG. 7, temporal changes of various elements when the above-described processing procedure is executed will be described. FIG. 7 shows the temporal change of each element when the heat treatment is performed in the periods T1 and T3 and the heat treatment is not performed by the heat treatment unit U2 in the period T2. That is, the steps S01 to S07 described above are executed in the periods T1 and T3, and the steps S08 to S13 described above are executed in the period T2.

  In FIG. 7, “exhaust ON” means that the exhaust units 70 and 80 are exhausting at the first exhaust amount, and “exhaust OFF” is that the exhaust units 70 and 80 are exhausting at the second exhaust amount. (Exhaust is stopped). In FIG. 7, “electric power” indicates the electric power used in one heat treatment unit U2. In the following, description will be given assuming that the amount of electric power used in the period T1 during which heat treatment and exhaust are performed is 100%. During the period T1, the heat treatment is performed, so that the temperature of the heating plate 42 is kept substantially constant (temperature tp1). Further, since the exhaust portions 70 and 80 are evacuating and the temperature of the heating plate 42 is kept substantially constant, the temperature inside the processing chamber 20 is kept substantially constant (temperature tp2).

  In the period T2, the exhaust by the exhaust units 70 and 80 is stopped. Since the electric power required for exhausting and heat treatment is reduced, the amount of electric power used in the period T2 is smaller than that in the period T1. For example, the amount of power used in the period T2 is reduced to about 30%, for example. In this way, the control device 100 executes the second control so that the electric power used is smaller than that in the first control. In the period T2, the temperature of the heating plate 42 is adjusted so that the temperature inside the processing chamber 20 approaches the second target value, so that the temperature inside the processing chamber 20 is kept substantially constant (temperature tp2). In addition, the second target value is set to the temperature inside the processing chamber 20 in the period T1, so that the temperature inside the processing chamber 20 is kept substantially constant (temperature tp2) throughout the periods T1 and T2. In the period T2, the temperature of the heating plate 42 is controlled to be lower than the temperature tp1 in order to maintain the temperature inside the processing chamber 20. The amount of electric power used in the period T2 gradually decreases as the temperature of the heating plate 42 decreases (the electric current value decreases), but the amount of electric power changes as compared with the decrease in the amount of electric power that accompanies stopping the exhaust. Is not shown because it is small.

  In the period T3, the heat treatment is performed again after the next wafer W is loaded, so that the exhaust units 70 and 80 exhaust the gas. As a result, the amount of electric power used becomes approximately the same as during the period T1, and the temperature of the heating plate 42 is maintained at the first target value after the temperature rises. By maintaining the temperature of the heating plate 42 at the first target value, the temperature inside the processing chamber 20 is kept substantially constant (temperature tp2). Since the heater 43 is provided on the heating plate 42, the time for adjusting the temperature of the heating plate 42 to the first target value is the time for adjusting the temperature in the processing chamber 20 to a desired value. Short compared to. For example, the temperature of the heating plate 42 can be adjusted to the first target value within a few seconds after the end of the standby state in the period T2. After the heat treatment in the period T3 is completed, the temporal change of each element similar to those in the periods T2 and T3 is repeated.

[Action]
In the coating / developing apparatus 2 and the substrate processing method described in the above embodiment, the exhaust units 70 and 80 are controlled so that the exhaust amount from the processing chamber 20 becomes the first exhaust amount, and the hot plate temperature measuring unit 50 is also provided. The first control for controlling the hot plate 42 so that the measurement value obtained by the method approaches the first target value, and the exhaust units 70, 80 are controlled so that the exhaust amount becomes the second exhaust amount smaller than the first exhaust amount. Second control for controlling the hot plate 42 so that the measured value by the indoor temperature measuring unit 60 approaches the second target value is executed.

  In the coating / developing apparatus 2 and the substrate processing method, since the second exhaust amount is smaller than the first exhaust amount, the second exhaust amount is controlled by the second control rather than the electric power when exhausting the first exhaust amount by the first control. The electric power for exhausting becomes small. As a result, it is possible to reduce the power consumption as compared with the case where the first control is continued without executing the second control.

  The temperature of the wafer W supported by the heating plate 42 is also affected by the temperature inside the processing chamber 20. Therefore, when the discharge amount (exhaust amount) of the gas discharged from the processing chamber 20 decreases, the temperature inside the processing chamber 20 rises, which affects the temperature of the wafer W supported by the heating plate 42. In the coating / developing apparatus 2 described above, the hot plate 42 is controlled so that the measured value of the temperature in the processing chamber 20 is maintained at the second target value when the exhaust amount becomes small. As a result, the temperature in the processing chamber 20 can be maintained within a desired range even when the exhaust gas amount is reduced, and therefore, when the exhaust gas amount is returned to the first exhaust gas amount, the exhaust gas amount changes as a result. The influence of the temperature change in the processing chamber 20 on the wafer W is reduced. Therefore, it becomes possible to control the temperature of the wafer W with higher accuracy while reducing the power consumption. That is, it is possible to achieve both the reduction of the power consumption and the improvement of the accuracy of the temperature control of the wafer W.

  Conventionally, it is considered that the substrate processing method (first comparative example) is often performed such that the exhaust by the exhaust units 70 and 80 is continued even during the non-heat treatment. FIG. 8A shows the time change of each element according to the first comparative example. In the first comparative example, the exhaust by the exhaust units 70 and 80 is continued throughout the periods T1 and T2 and the subsequent periods. In this case, in the period T2, since the heat treatment of the wafer W is not performed, the power consumption is reduced, but the reduction amount is small. As described above, in the first comparative example, the corresponding electric power is used even during the time period when the heat treatment of the wafer W is not performed.

  Therefore, in order to reduce the amount of electric power used, a substrate processing method (second comparative example) in which the exhaust of the exhaust units 70 and 80 is stopped in the period T2 (non-heat treatment) can be considered. FIG. 8B shows the time change of each element according to the second comparative example. In the substrate processing method according to the second comparative example, the exhaust of the exhaust units 70 and 80 is stopped in the period T2 (during non-heat treatment), but the temperature in the processing chamber 20 is kept substantially constant as compared with the present embodiment. There is no control. In the second comparative example, the exhausting by the exhaust units 70 and 80 is stopped in the period T2, but the measured value of the temperature of the hot plate 42 is kept at the target value (temperature tp1) as in the first comparative example. The hot plate 42 is controlled so that In this case, since the exhaust from the inside of the processing chamber 20 is stopped, the temperature of the processing chamber 20 (the space inside the chamber 44) naturally rises. Therefore, the temperature inside the processing chamber 20 at the end of the period T2 is higher than the temperature inside the processing chamber 20 during the period T1. If the heat treatment for the next wafer W is attempted while the temperature inside the processing chamber 20 is rising, the temperature of the atmosphere surrounding the wafer W and the temperature of the chamber 44 change from the period T1, and the first comparative example is performed. There is a possibility that the temperature of the wafer W cannot be controlled with high precision as compared with.

  On the other hand, in the present embodiment, the first control is executed during the heat treatment including the heating of the wafer W by the heating plate 42, and the second control is executed during the non-heat treatment of the wafer W. That is, as shown in FIG. 7, even if the exhaust amount by the exhaust units 70 and 80 is reduced, the temperature in the processing chamber 20 is maintained in the desired range even during the period T2 in which the heat treatment is not performed. In this way, the temperature inside the processing chamber 20 (chamber 44) is kept substantially constant, so that the effect of stopping the exhaust (decreasing the exhaust amount) is reduced. As a result, the temperature of the wafer W can be controlled more accurately when the exhaust amount is returned to the first exhaust amount and the heat treatment is performed, while reducing the power consumption.

  Further, the second target value is set so that the difference between the second target value and the temperature in the processing chamber at the time of executing the first control is included in the predetermined range. In this case, the temperature in the processing chamber 20 is maintained within a predetermined range regardless of the exhaust amount, so that it is possible to control the temperature of the wafer W with higher accuracy while reducing the power consumption.

  The processing chamber 20 also includes a chamber 44 configured to surround the substrate mounting surface 42 a of the heating plate 42. The indoor temperature measuring unit 60 measures the temperature of the chamber 44 (top plate portion 44a). For example, even if outside air is temporarily introduced into the processing chamber 20 from the outside of the heat treatment unit U2, the influence on the temperature of the chamber 44 is small. In the above configuration, since the temperature of the chamber 44 is measured by the room temperature measuring unit 60, the temperature inside the processing chamber 20 can be stably measured. The ambient temperature around the wafer W supported by the heating plate 42 is influenced by the chamber 44 surrounding the wafer W. Therefore, by measuring the temperature of the chamber 44 and maintaining the measured value of the temperature of the chamber 44 at the second target value, the ambient temperature around the wafer W is accurately adjusted. As a result, it becomes possible to control the temperature of the wafer W with higher accuracy while reducing the power consumption.

[Modification]
The embodiments disclosed above are to be considered in all respects as illustrative and not restrictive. The above-described embodiments may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the appended claims.

  Another example of the substrate processing method by the control device 100 will be described with reference to FIGS. 9 and 10. In the substrate processing method according to this modification, as shown in FIG. 9, the control device 100 sequentially executes steps S21 to S32. The processing content in each of steps S21 to S32 is the same as the processing content in steps S01 to S12 described above, and thus the description thereof is omitted.

  Next, the control device 100 executes step S33. In step S33, control device 100 determines whether or not the start of heat treatment of the next wafer W to be processed is approaching. Specifically, the control device 100 determines whether the time until the standby state ends (for example, the time until the scheduled start time of the heat treatment of the next wafer W to be processed) is within a predetermined time. To do. For example, the control device 100 acquires (calculates) the scheduled start time of the heat treatment of the next wafer W, and calculates the time ts at which it is determined that the start of the heat treatment is approaching, from the scheduled start time and the predetermined time. If the current time has reached time ts, control device 100 determines that the time until the standby state ends is within a predetermined time. In step S33, the control device 100 repeats steps S31 and S32 until the time until the standby state ends is within the predetermined time. In other words, as shown in FIG. 10, the control device 100 controls the temperature in the processing chamber 20 to reach the second target value until the time until the standby state is completed is within a predetermined time (until time ts). The hot plate 42 is controlled so as to be maintained at. The predetermined time for determining whether the heat treatment is about to start may be set to about several seconds.

  On the other hand, when it is determined in step S33 that the time until the waiting state is completed is within the predetermined time, it is determined that the start of the heat treatment of the next wafer W to be processed is approaching, and the control device 100 Steps S34 to S36 are executed. Steps S34 and S35 are performed in the same manner as steps S25 and S26 (steps S05 and S06). In step S36, similarly to step S13, the control device 100 determines whether or not the standby state has ended. When it is determined in step S36 that the standby state has not ended, the control device 100 repeats steps S34 and S35, and thus, as shown in FIG. The temperature rises toward the first target value.

  On the other hand, when it is determined in step S36 that the standby state has ended, the control device 100 executes step S37. In step S37, the control device 100 causes the exhaust units 70 and 80 to exhaust the gas from the processing chamber 20. Then, the control device 100 repeats steps S23 to S37. Note that steps S21 to S27 are executed in the period T1 shown in FIG. 10, and steps S28 to S33 are executed in the period T2 before the time ts shown in FIG. Then, steps S34 to S36 are executed in the period T2 after the time ts shown in FIG. 10, and steps S37 and S23 to S27 are executed in the period T3 shown in FIG. After that, the same change as the time change of each element in the periods T2 and T3 is repeated.

  In this modification, the controller 100 stops the discharge of gas from the inside of the processing chamber 20 after executing the second control during the non-heat treatment, and the measured value by the hot plate temperature measurement unit 50 is the first target. A third control for controlling the temperature of the heating plate 42 is performed so as to approach the value. The controller 100 switches from the second control to the third control when the start of the heat treatment of the next processing target wafer W approaches when the wafer W is not heat-treated. In other words, the control device 100 switches from the second control to the third control when the time until the waiting time ends is within the predetermined time. After executing the third control, the control device 100 executes the first control when the heat treatment of the next wafer W to be processed is started. In this modification, the third control for bringing the temperature of the heat plate 42 close to the first target value is started before the heat treatment is started (from the time ts), so that the temperature of the heat plate 42 is set to the first temperature in accordance with the start of the heat treatment. It is possible to quickly adjust to the target value.

  In addition, as the temperature of the heating plate 42 increases toward the first target value, the temperature inside the processing chamber 20 may slightly increase because the exhaust by the exhaust units 70 and 80 is stopped. However, the influence of the temperature rise on the temperature control of the wafer W is small. Further, the temperature change is such that it can be corrected in a short time by executing the first control after the third control. In addition, illustration of the said temperature rise is abbreviate | omitted in FIG.

  In the substrate processing method (exhaust gas and temperature adjustment procedure) in the above-described embodiment and modification, the order in which the steps are executed may be exchanged, and the execution times of the steps that are successively executed may overlap each other. . For example, after the temperature control of the heating plate 42 is started in step S02, the exhaust by the exhaust units 70 and 80 may be started in step S01. For example, the evacuation by the evacuation units 70 and 80 may be started while the wafer W is loaded into the heat treatment unit U2.

  The controller 100 does not necessarily have to execute the second control (second and third control) after the heat treatment is completed and before the standby state is completed. That is, while the heat treatment period and the non-heat treatment period are alternately repeated, the control device 100 does not have to execute the second control (second control, third control) each time the non-heat treatment is performed. The control device 100 may switch the first control and the second control regardless of whether the heat treatment is performed or the non-heat treatment is performed.

  A blower that sucks out the gas in the processing chamber 20 may be provided at one end on the outside of the exhaust ducts 71 and 81 of the exhaust units 70 and 80. When stopping the discharge of gas by the exhaust units 70 and 80, the suction by the blower may be stopped together with the setting of the open / close units 72 and 82 to the closed state. Alternatively, the exhaust by the exhaust units 70, 80 may be stopped by setting the open / close units 72, 82 to the closed state while the suction by the blower is continued.

  The heat treatment unit U2 may include only the heat treatment as the heat treatment without the temperature adjustment mechanism 30. The heat treatment unit U2 may not include either the exhaust unit 70 or the exhaust unit 80. The exhaust amounts from the exhaust unit 70 and the exhaust unit 80 may be the same or different from each other. When the exhaust amounts are different from each other, the exhaust amount by any of the exhaust units may be large. The controller 100 may stop the exhaust from either the exhaust unit 70 or the exhaust unit 80 during the non-heat treatment. In this case, the gas may be discharged at the second exhaust amount by the exhaust unit that performs exhaust during the non-heat treatment.

  The control device 100 may perform the first control during the heat treatment by the heating mechanism 40, and may perform the second control during the non-heat treatment by the heating mechanism 40 including the temperature adjustment period by the temperature adjustment mechanism 30. That is, in the above-described embodiment, the heat treatment during which the first control is executed includes the temperature adjustment by the temperature adjustment mechanism 30, but the heat treatment does not have to include the temperature adjustment by the temperature adjustment mechanism 30.

  In the above embodiment, the inside of the processing chamber 20 that is partitioned into the housing 21 and houses the chamber 44 and the support 41 is described, but the processing chamber may be configured by the chamber 44 and the support 41. Further, the configuration of the exhaust unit is appropriately changed depending on the configuration of the processing chamber. For example, when the processing chamber is configured by the chamber 44 and the support base 41, the control device 100 may evacuate the chamber 44 with the first exhaust amount by the exhaust unit 80 during the heating process by the heating mechanism 40. . Further, the control device 100 may perform the exhaust of the second exhaust amount from the inside of the chamber 44 by the exhaust unit 80 during the non-heat treatment by the heating mechanism 40 (including the temperature adjustment period by the temperature adjustment mechanism 30) (exhaust). May be stopped). Further, the control device 100 controls the hot plate 42 so that the measured value by the hot plate temperature measuring unit 50 approaches the first target value during the heating process, and the measured value by the indoor temperature measuring unit 60 (the chamber 44 during the non-heating process). The heating plate 42 may be controlled such that the temperature of the hot plate 42 approaches the second target value.

  The substrate to be processed is not limited to the semiconductor wafer, and may be, for example, a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like.

  DESCRIPTION OF SYMBOLS 1 ... Substrate processing system, 2 ... Coating / developing apparatus (substrate processing apparatus), U2 ... Heat treatment unit, 20 ... Processing chamber, 42 ... Hot plate, 44 ... Chamber (lid), 50 ... Hot plate temperature measuring unit (first) 1 temperature measuring part), 60 ... Indoor temperature measuring part (second temperature measuring part), 70, 80 ... Exhaust part, 100 ... Control device (control part), W ... Wafer (substrate).

Claims (7)

A processing chamber accommodating a substrate to be processed,
A heating plate that supports and heats the substrate in the processing chamber;
An exhaust unit for exhausting gas from the processing chamber,
A first temperature measuring unit for measuring the temperature of the hot plate;
A second temperature measuring unit for measuring the temperature in the processing chamber;
A control unit for controlling the hot plate and the exhaust unit,
Have
The control unit controls the exhaust unit so that the exhaust amount from the processing chamber becomes a first exhaust amount, and the hot plate is set so that a measured value by the first temperature measuring unit approaches a first target value. And controlling the exhaust unit so that the exhaust amount becomes a second exhaust amount smaller than the first exhaust amount, and the measured value by the second temperature measuring unit is a second target value. And a second control for controlling the hot plate so as to approach the substrate processing apparatus.   The substrate processing apparatus according to claim 1, wherein the control unit executes the first control during a heat treatment including heating of the substrate by the hot plate and the second control during a non-heat treatment of the substrate. The control unit is
A third control is performed that controls the exhaust unit so that the exhaust amount becomes the second exhaust amount, and controls the hot plate so that the measurement value by the first temperature measurement unit approaches the first target value. Run further,
The substrate processing apparatus according to claim 2, wherein the second control is switched to the third control when the start of the heat treatment of the substrate approaches when the substrate is not heat-treated.   The said control part sets the said 2nd target value so that the difference of the said 2nd target value and the temperature of the said process chamber at the time of the said 1st control may be contained in a predetermined range, The said 1st any one of Claims 1-3. The substrate processing apparatus according to claim 1. The processing chamber includes a lid configured to surround a mounting surface of the substrate on the hot plate,
The substrate processing apparatus according to claim 1, wherein the second temperature measurement unit measures the temperature of the lid body as the temperature inside the processing chamber. The value measured by the first temperature measuring unit that controls the exhaust amount from the processing chamber that accommodates the substrate to be processed to be the first exhaust amount and that measures the temperature of the hot plate that supports and heats the substrate is Controlling to approach the first target value, and
The exhaust amount is controlled to be a second exhaust amount that is smaller than the first exhaust amount, and the measured value by a second temperature measuring unit that measures the temperature in the processing chamber is controlled to approach a second target value. A method of processing a substrate, comprising:   A computer-readable storage medium storing a program for causing an apparatus to execute the substrate processing method according to claim 6.

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