JP2001358045A - Substrate processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make thermal history of every substrate uniform. SOLUTION: The weight of a substrate W is measured by an electronic balance 11 installed under a substrate holding arm 7, and the measured data thereof is sent to the control constant decision part 29 of a controller 22. The control constant decision part 29 determines such a PID constant that can obtain the same temperature gradient as that of a substrate having a reference weight. An HP control part 30 uses the PID constant determined thereby to determine the quantity of controlling a heater 20 successively for temperature control.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate for performing a heat treatment or a cooling treatment on a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk, etc. (hereinafter simply referred to as "substrate"). It relates to a processing device.

[0002]

2. Description of the Related Art Conventionally, various heat treatments have been performed in the above-mentioned substrate manufacturing process. In general, a heat treatment of a substrate is performed by a heating processing unit or a cooling processing unit of a substrate processing apparatus before and after application of a resist or before and after a developing process.

For example, in the case of performing a heat treatment for heating a substrate, the substrate is placed on a heating plate, which is a heating plate, in a heat treatment section, and is heated at a predetermined temperature for a predetermined time according to the purpose of the heat treatment. .

On the other hand, when performing a heat treatment for cooling a substrate, the substrate is placed on a cooling plate, which is a cooling plate, in a cooling processing section, and is cooled to a predetermined temperature.

When heat treatment is performed in such a heating section or a cooling section, the temperature of the heating plate or the cooling plate is controlled to a predetermined temperature, and usually, the PID is controlled.
(Proportional-Integral-Derivative) temperature is controlled. PID control is one form of feedback control, and controls output to a heating plate or a cooling plate based on a detection signal from a temperature sensor provided on the heating plate or a cooling plate.

The contents of the PID control differ depending on the so-called PID constant. And
Conventionally, each substrate is treated with the same PID constant so that the temperature history for each substrate to be processed is constant, that is, the temperature history between a plurality of substrates can be brought to a predetermined target temperature without a difference. The temperature was controlled.

[0006] However, the thickness of the substrate to be processed may be different (the weight differs between the substrates depending on the thickness). Substrates with different thicknesses have the same PI
When the temperature is controlled so as to reach a predetermined target temperature by the D constant, the heat capacity differs for each substrate, resulting in a difference in the rate of temperature increase or decrease, resulting in a different heat history for each substrate, and thus a resist coating. This has the adverse effect that the uniformity of the film thickness after development and the uniformity of the line width after development differ from substrate to substrate.

[0007] The present invention has been made in view of the above problems, and has as its object to provide a substrate processing apparatus capable of keeping the heat history of each substrate constant.

[0008]

According to a first aspect of the present invention, there is provided a substrate processing apparatus comprising: a heating plate which is heated by a heating means, supports a substrate, and performs a heating process on the substrate; A control mode determining unit that determines a control mode of heating according to the weight of each substrate before processing, and a heating unit is controlled based on the control mode determined by the control mode determining unit, and the temperature of the heating plate is set to a predetermined value. Temperature control means for leading to a target temperature.

According to a second aspect of the present invention, there is provided the substrate processing apparatus according to the first aspect, further comprising weight measuring means for measuring the weight of each substrate before the heat treatment. .

According to a third aspect of the present invention, in the substrate processing apparatus according to the first or second aspect, the temperature control means performs PID control on the temperature of the heating plate to determine a control mode. The means determines a PID constant for PID control according to the weight of each substrate before the heat treatment.

According to a fourth aspect of the present invention, there is provided a substrate processing apparatus according to the second or third aspect, wherein the weight measuring means is provided on the substrate transport means for taking out the substrate from the substrate storage container. When the substrate is taken out of the storage container, the weight of the substrate is measured.

According to a fifth aspect of the present invention, there is provided a substrate processing apparatus, comprising: a heating plate which is heated by a heating means, supports a substrate and performs a heating process on the substrate, and a heating plate according to the thickness of each substrate before the heating process. Control means for determining the control mode of the control means, and temperature control means for controlling the heating means based on the control mode determined by the control mode determination means and for guiding the temperature of the heating plate to a predetermined target temperature. It is characterized by.

According to a sixth aspect of the present invention, there is provided the substrate processing apparatus according to the fifth aspect, further comprising a thickness measuring means for measuring the thickness of each substrate before the heat treatment. .

According to a seventh aspect of the present invention, there is provided the substrate processing apparatus according to the fifth or sixth aspect, wherein the temperature control means controls the temperature of the heating plate by P.
ID control is performed, and the control mode determining means determines a PID constant of the PID control according to the thickness of each substrate before the heat treatment.

According to an eighth aspect of the present invention, in the substrate processing apparatus according to the sixth or seventh aspect, the thickness measuring means is provided in the substrate transport means for taking out the substrate from the substrate storage container. And measuring the thickness of the substrate when removing the substrate from the substrate storage container.

According to a ninth aspect of the present invention, there is provided a substrate processing apparatus, comprising: a cooling plate which is cooled by a cooling means, supports a substrate and performs a cooling process on the substrate, and a cooling plate according to the weight of each substrate before the cooling process. Control means for determining the control mode of the control means, and temperature control means for controlling the cooling means based on the control mode determined by the control mode determination means to guide the temperature of the cooling plate to a predetermined target temperature. It is characterized by.

According to a tenth aspect of the present invention, there is provided the substrate processing apparatus according to the ninth aspect, further comprising weight measuring means for measuring the weight of each substrate before the cooling process. .

According to an eleventh aspect of the present invention, in the substrate processing apparatus according to the ninth or tenth aspect, the temperature control means controls the temperature of the cooling plate by P.
The ID control is performed, and the control mode control means determines a PID constant of the PID control according to the weight of each substrate before the cooling process.

According to a twelfth aspect of the present invention, in the substrate processing apparatus of the tenth or eleventh aspect, the weight measuring means is provided on the substrate transport means for taking out the substrate from the substrate storage container. And measuring the weight of the substrate when removing the substrate from the substrate storage container.

According to a thirteenth aspect of the present invention, there is provided a substrate processing apparatus, comprising: a cooling plate which is cooled by a cooling means and supports a substrate to perform a cooling process on the substrate; Control means for determining the control mode of the control means, and temperature control means for controlling the cooling means based on the control mode determined by the control mode determination means to guide the temperature of the cooling plate to a predetermined target temperature. It is characterized by.

According to a fourteenth aspect of the present invention, there is provided the substrate processing apparatus according to the thirteenth aspect, further comprising a thickness measuring means for measuring the thickness of each substrate before the cooling process. .

According to a fifteenth aspect of the present invention, in the substrate processing apparatus of the thirteenth or fourteenth aspect, the temperature control means performs PID control on the temperature of the cooling plate, and the control mode determination means Is characterized in that a PID constant for PID control is determined according to the weight of each substrate before the cooling process.

According to a sixteenth aspect of the present invention, in the substrate processing apparatus of the fourteenth or fifteenth aspect, the thickness measuring means is provided in the substrate transport means for taking out the substrate from the substrate storage container. And measuring the thickness of the substrate when removing the substrate from the substrate storage container.

[0024]

DESCRIPTION OF THE PREFERRED EMBODIMENTS <1. Overall configuration of substrate processing equipment>
First, an arrangement configuration of the substrate processing apparatus according to the present invention will be described. FIG. 1 is a diagram illustrating an arrangement configuration according to the embodiment.

As shown in FIG. 1, in the present embodiment, the substrate processing apparatus includes an indexer ID for carrying in and out a substrate, a plurality of processing units for performing processing on the substrate, and a substrate to each processing unit. The apparatus is provided with a unit arrangement section MP in which substrate transport means is arranged, and an interface IFB provided for carrying in / out a substrate between an exposure apparatus (not shown) and the unit arrangement section MP.

At the four corners of the unit arrangement section MP, as a liquid processing unit for performing processing with a processing liquid on the substrate, a coating processing unit S for performing resist coating processing while rotating the substrate.
C1 and SC2 (spin coaters) and development processing units SD1 and SD2 (spin developers) for developing the exposed substrate are arranged. Further, above these liquid processing units, a multi-stage heat treatment unit 20 for performing heat treatment on the substrate is disposed at the front and rear of the apparatus.

At the center of the apparatus between the coating units SC1 and SC2 and the developing units SD1 and SD2,
A transfer robot TR1 is provided as a substrate transfer means for accessing all the surrounding processing units and transferring the substrate between them. This transfer robot TR
Numeral 1 is movable in the vertical direction and rotatable about a central vertical axis.

Above the coating unit SC1, a two-stage heat treatment unit is disposed as the multi-stage heat treatment unit 20. A cooling processing unit CP1 for performing a cooling process on the substrate is provided at a position of the first stage counted from the lowest stage, and an adhesion reinforcing unit for performing an adhesion strengthening process while heating the substrate is provided at the second stage. AH is provided. Although the uppermost stage is empty in the case of the apparatus of the present embodiment, a heat treatment unit, a cooling treatment unit, or other heat treatment units can be incorporated as needed.

A heat treatment unit having a three-stage structure is disposed above the coating treatment unit SC2 as the multi-stage heat treatment unit 20. A cooling processing unit CP2 is provided at the position of the first stage from the lowermost stage,
Heat processing units HP1 and HP2 are provided at the positions of the stages.

Above the development processing unit SD1, a two-stage heat treatment unit is disposed as the multi-stage heat treatment unit 20. A cooling processing unit CP3 is provided at the first stage position from the lowermost stage, and a post-exposure baking unit PEB for performing post-exposure baking processing on the substrate is provided at the second stage position. I have. Although the uppermost stage is empty in this embodiment, a heat treatment unit, a cooling treatment unit, or another heat treatment unit can be incorporated as needed.

A heat treatment unit having a three-stage structure is arranged above the development processing unit SD2 as the multi-stage heat treatment unit 20. Of these, a cooling processing unit CP4 is provided at the position of the first stage from the lowest stage, and heating processing units HP3 and HP4 are provided at the positions of the second to third stages.

The interface IFB has a function of temporarily stocking a substrate on which resist application has been completed in the unit arrangement section MP so as to transfer the substrate to the exposure apparatus or to receive a substrate after exposure from the exposure apparatus. Although not shown, the robot includes a robot that transfers a substrate to and from the transfer robot TR1, and a buffer cassette that places the substrate.

An example of a substrate processing flow in such a substrate processing apparatus will be described with reference to FIG. First, the unprocessed substrates unloaded from the indexer ID are transferred one by one to the transfer robot TR1 in the unit placement unit MP, and the transfer robot TR1 heats the substrate while strengthening the adhesion between the substrate and the resist. Section AH, cooling processing section CP for cooling the substrate heated by adhesion strengthening section AH
1. Coating unit S for coating a resist film on a substrate
C1, the heat treatment section HP1 for heating the substrate on which the resist is applied to volatilize the solvent component, and the cooling processing section CP2 for cooling the substrate after the heat treatment are sequentially moved to the cooling processing section CP2. The substrate is taken out and the substrate to be processed is loaded, and each processing unit performs a required process on the substrate. Thereby, a resist film is formed on the main surface of the substrate.

Next, the substrate having the resist film formed on the surface thereof is transferred from the transfer robot TR1 to the interface IFB, and is carried into the exposure apparatus (not shown) through the interface IFB. Then, the substrate is exposed in the exposure apparatus, and the substrate after the exposure processing is returned to the interface IFB and transferred to the transport robot TR1 through the interface IFB.

The substrate subjected to the exposure processing returned to the transfer robot TR1 is heated by the transfer robot TR1 in the heat treatment section PE.
B and is heat-treated by the heat-treating unit PEB. This heat treatment promotes a chemical reaction in the exposed portion. Then, the substrate is transferred from the heating processing unit PEB to the cooling processing unit CP3 by the transfer robot TR1, and
The substrate is cooled in the cooling processing unit CP3. This cooling stops the reaction in the exposed portion of the resist. After that, the transport robot TR1 transports the substrate from the cooling processing unit CP3 to the development processing unit SD1 or SD2, and the development processing of the substrate is performed. The substrate after the development processing is subjected to so-called post-baking after the development processing.
After being conveyed to P2 and post-baked, it is sent to CP4 where it is subjected to a cooling process and conveyed to an indexer ID.

Next, the details of the indexer ID will be described. FIG. 3 is a schematic side sectional view of the indexer ID.
In FIG. 3, the indexer ID includes a mounting section 2 and a substrate transport section 3. On the upper surface of the mounting portion 2, an integrated cassette 4 is mounted as a substrate storage container. The integrated cassette 4 is arranged so that the opening 5 faces the substrate transport section 3 side. The lid 4a of the integrated cassette 4a is taken out by a lid opening / closing mechanism (not shown) and is held below the substrate transport unit 3.

A substrate transfer mechanism 6 is arranged in the substrate transfer section 3. The substrate transfer mechanism 6 includes a substrate holding arm 7 for holding the substrate W, an arm driving mechanism 8 for moving the substrate holding arm 7 forward and backward in a horizontal direction, and rotating about a vertical axis, and a substrate holding arm 7 and an arm driving mechanism. And a vertical drive unit 9 for moving the substrate holding arm 7, the arm drive mechanism 8, and the vertical drive unit 9 along a rail 10a extending in the horizontal direction (perpendicular to the paper surface). It is composed of The substrate holding arm 7 has
An electronic balance 11 for measuring the weight of the substrate W when the substrate holding arm 7 holds the substrate W is provided on its lower surface.
This electronic balance 11 corresponds to the weight measuring means in the present invention.

When the integrated cassette is mounted on the mounting portion 2 of the indexer ID, first, a substrate detection device (not shown) is operated to determine whether or not the substrate W is stored in each storage shelf in the integrated cassette 4. Is detected. When the detection operation of the substrate is completed, the arm driving mechanism 8, the elevation drive unit 9, and the horizontal movement unit 10 of the substrate transfer mechanism 6 operate based on the detection result, and the substrate holding arm 7 is stored in the integrated cassette 4. The processed unprocessed substrate W is taken out of the integrated cassette 4 and paid out to the area of the unit arrangement section for processing the substrate, while the substrate processing section of the unit arrangement section MP receives the processed substrate. It is stored in a storage shelf in the integrated cassette 4. When the unprocessed substrate W is taken out by the substrate holding arm 7, the weight of the unprocessed substrate taken out is measured by the electronic balance 11 provided on the lower surface of the substrate holding arm. Then, the measured results are the adhesion strengthening portion AH for performing the heat treatment, the respective heat treatment portions HP1, PEB, HP2, and the cooling treatment portions CP1, CP2, CP3 for performing the cooling treatment.
It is sent to the CP4 controller.

<2. Structure of Heat Processing Unit> Next, the structure of the heat processing unit constituting the substrate processing apparatus according to the present embodiment will be described with reference to FIG. In addition, the adhesion strengthening portion AH,
Since the configuration of the main parts of each of the heat treatment units HP1, PEB, and HP2 is substantially the same, here, the heat treatment unit HP1 will be described as an example.

The heating section HP1 is heated by the heating device 20, supports the substrate W on the upper surface, and corresponds to a mounting plate for performing a heating process on the substrate W, a controller 22, a power supply box, and the like. An operating device 25 for operating electric power from a power supply source 24 composed of a factory utility or the like to the heating device 20 in the heating plate 21 is provided.

The heating plate 21 has therein a heating device 20 corresponding to a heating means and a temperature sensor (not shown) for detecting the temperature of the heating plate. Heating equipment 20
May include only a main heating device such as a mica heater, or may include an auxiliary heating device including a Peltier element or the like in addition to the main heating device.

In FIG. 4, a plurality of proximity balls 26 are provided on the upper surface of the heating plate 21 and are supported on the substrate W at a very small distance from the upper surface of the heating plate 21 to heat the substrate W. Although the proximity balls 26 are omitted, the substrate W may be directly supported on the upper surface of the heating plate 21 and the substrate W may be heated.

Further, a plurality of substrate support pins 27 are penetrated through the heating plate 21 so as to be able to move up and down. These substrate support pins 27 are provided on the substrate W with respect to the heating plate 21.
For carrying in / out, and is configured to be moved up and down in synchronization with an actuator 28 such as an air cylinder. As shown by the two-dot chain line in the figure, the transfer robot TR1 moves the substrate support pins 2 above the heating plate 21 with the substrate support pins 27 raised.
7, the substrate W is delivered, as shown by the solid line in the figure.
The substrate support pins 27 descend to a lower position where the tip of the substrate support pins 27 fits inside the heating plate 21, and the received substrate W is placed on the proximity ball 26 (or
The substrate W is loaded and supported directly on the upper surface of the heating plate 21, and the substrate W is carried into the heating plate 21. When the heat treatment is completed, the substrate support pins 27 rise from the lowered position,
The substrate W is lifted above the heating plate 21 to carry out the substrate W from the heating plate 21. The substrate W lifted from the heating plate 21 is received from the substrate support pins 27 by the transfer robot TR1, and is carried out of the heat processing unit.

The controller 22 includes a control constant determining unit 29 corresponding to a control mode determining unit having a memory 32, an HP control unit 30 corresponding to a temperature control unit, and a substrate support pin elevating control unit 31. . This controller 22
Is composed of, for example, a microcomputer that executes processing control of each unit 29 to 31 according to a program.

Under such a configuration, the heat treatment section HP1
Then, the heating control mode is determined as follows, and the substrate W
Is heated. That is, first, before processing the substrate, the target temperature of the heat treatment, the data of the weight of the substrate W as a reference (hereinafter referred to as “reference weight”), and the PID constant of the heating control corresponding thereto are set from the setting mechanism 23. Then, it is stored in the memory 32 of the control constant determination unit 29 of the controller 22. When a substrate processing start command is issued in the substrate processing apparatus, the substrate holding arm 7 moves toward the integrated cassette 4 and takes out an unprocessed substrate W. At this time, the electronic balance 1 provided on the lower surface of the substrate holding arm 7
1 measures the gravity of the substrate W. Measured substrate W
Is transmitted to the control constant determining unit 29 of the controller 22 and stored in the memory 32.

Here, as shown in FIG. 5 (a), the gradient of the temperature rise of the substrate W having the reference weight shown by the solid line is a two-dot chain line. The gradient of the temperature rise of the thick or heavy substrate is gentle as shown by the dashed line. Therefore, the control constant determination unit 29 compares the data of the reference weight stored in the memory 32 with the data of the weight of the substrate W measured this time, and when it is determined that the weight is light, the PID of the substrate of the reference weight is determined.
The PID constant is changed so as to obtain an output with a reduced gain so as to obtain the same temperature rise gradient as that of the substrate having the reference weight, and stores the PID constant in the memory 32. Conversely, if it is determined that the weight is heavy, the control constant determination unit 29
The PID constant of the substrate of the reference weight is changed, and a PID constant that can obtain an output with an increased gain so as to obtain the same gradient of temperature rise as that of the substrate of the reference weight is determined and stored in the memory 32. Then, the substrate W is heated by the heat treatment section H.
When performing the heat treatment at P1, the determined PID constant is sent to the HP control unit 30 together with the target temperature as a control constant.

In the HP control unit 30, the control constant determination unit 29
, The current temperature of the heating plate 21 is monitored by a detection signal from a temperature sensor (not shown), and the current temperature of the heating plate 1 is determined using the PID constant determined by the control constant determination unit 29. The operation amount (the amount of power supplied from the power supply source 24 to the heating device 20) to the heating device 20 that cancels the deviation between the temperature and the target temperature is sequentially determined, and the power of the power amount is supplied to the heating device 20. Operation signals for performing various operations
The temperature of the heating plate 21 is controlled by feedback control while operating the operating device 25 to heat the substrate W.

Such temperature control of the heating plate 21 is performed on all the substrates W accommodated in the integrated cassette 4 and subjected to the same processing, and all the substrates W are shown in FIG.
A heat treatment having the same temperature rise gradient as shown in FIG. By performing such control, the rate of temperature rise, that is, the gradient of temperature rise for each substrate can be made similar, and the temperature history for each substrate can be made similar.

Here, the case of the heat treatment part HP1 has been described as an example, but the adhesion strengthening part AH1, each heat treatment part PE
In B and HP2, the same heating control as that of HP1 is performed, the rate of temperature rise for each substrate, that is, the gradient of temperature rise can be made the same, the temperature history for each substrate can be made the same, and the film after resist application The thickness uniformity and the line width uniformity after development can be improved.

<3. Configuration of Cooling Unit> Next, a cooling unit constituting the substrate processing apparatus according to the present embodiment will be described with reference to FIG. In addition, other cooling processing units CP1,
Since the configurations of CP3 and CP4 are substantially the same, a description will be given of the cooling processing unit CP2 as an example.

The cooling unit CP2 is cooled by the cooling device 40, and supports the substrate W on the upper surface, and the cooling plate 41 corresponding to the mounting plate for performing the cooling process on the substrate W, the controller 42, the power supply box, An operating device 45 for operating power supplied from the power supply source 24 including a utility of the factory to the cooling device 40 is provided.

The cooling plate 41 includes a cooling plate 41.
There is a temperature sensor (not shown) for detecting the temperature inside. Further, a cooling device 40 corresponding to a cooling means is provided between the cooling plate 41 and the lower plate 53. The cooling device 40 is composed of, for example, a Peltier element that absorbs heat from the cooling plate to cool the cooling plate.

In FIG. 6, a plurality of proximity balls 46 are arranged on the upper surface of the heating plate 41, and the substrate W is supported at a small interval from the upper surface of the heating plate 41 to perform a cooling process on the substrate W. However, the proximity balls 46 may be omitted, and the substrate W may be directly supported on the upper surface of the cooling plate 41 to perform the cooling process on the substrate W.

Further, a plurality of substrate support pins 47 are penetrated through the cooling plate 21 so as to be able to move up and down. These substrate support pins 47 are provided with the substrate W with respect to the cooling plate 41.
For carrying in / out of the apparatus, and is configured to be moved up and down in synchronization with an actuator 48 such as an air cylinder. As shown by the two-dot chain line in the figure, the transfer robot TR1 moves the substrate support pins 4 above the cooling plate 41 with the substrate support pins 47 raised.
7, the substrate W is delivered, as shown by the solid line in the figure.
The substrate support pins 27 are lowered to a lower position where the tip of the substrate support pins 47 is accommodated in the cooling plate 41, and the received substrate W is placed on the proximity ball 46 (or
The substrate W is loaded and supported directly on the upper surface of the cooling plate 41, and the substrate W is carried into the cooling plate 41. When the cooling process is completed, the substrate support pins 47 are raised from the lowered position,
The substrate W is lifted above the cooling plate 41 to carry out the substrate W from the cooling plate 41. The substrate W lifted from the cooling plate 41 is received from the substrate support pins 47 by the transfer robot TR1 and carried out of the cooling processing unit.

The controller 42 includes a control constant determining unit 49 corresponding to a control mode determining unit having a memory 52, a CP control unit 50 corresponding to a temperature control unit, and a substrate support pin elevating control unit 51. . This controller 42
Is composed of, for example, a microcomputer that executes processing control of each of the units 49 to 51 according to a program.

With such a configuration, the cooling processing unit CP2
Then, the cooling control mode is determined as follows, and the substrate W
Is cooled. That is, as in the case of the heat treatment, first, before processing the substrate, the target temperature of the cooling process, the data of the weight of the reference substrate W (hereinafter referred to as “reference weight”), and the corresponding cooling A PID constant for control is set, and a control constant determination unit 49 of the controller 42 is set.
Is stored in the memory 52. Then, as described above, when the unprocessed substrate W is taken out by the substrate holding arm 7, the data of the weight of the substrate W measured by the electronic balance 11 is transmitted to the control constant determination unit 49 of the controller 42, and 52.

Here, as shown in FIG. 5 (c), the gradient of the temperature drop of the thin substrate, ie, the light substrate, is two-dot chain line with respect to the gradient of the temperature decrease of the substrate W of the reference weight shown by the solid line. The gradient of the temperature drop of the thick or heavy substrate becomes gentle as shown by the dashed line. Therefore, the control constant determination unit 49 compares the data of the reference weight stored in the memory 52 with the data of the weight of the substrate W measured this time, and when it is determined that the weight is light, the PID of the substrate of the reference weight is determined.
The PID constant is changed so as to obtain an output with a reduced gain so as to obtain the same temperature gradient as that of the substrate of the reference weight, and the PID constant is stored in the memory 52. Conversely, if it is determined that the weight is heavy, the control constant determination unit 49
The PID constant of the substrate of the reference weight is changed, and a PID constant that can obtain an output with increased gain so as to obtain the same temperature gradient as that of the substrate of the reference weight is determined and stored in the memory 52. Then, the substrate W is transferred to the cooling processing unit C.
When performing the cooling process at P2, the determined PID constant is sent to the CP control unit 50 together with the target temperature as a control constant.

In the CP control section 50, the control constant determination section 49
Is supplied with the PID constant and the target temperature, the current temperature of the cooling plate 41 is monitored by a detection signal from a temperature sensor (not shown), and the current temperature of the cooling plate 1 is determined using the PID constant determined by the control constant determination unit 49. The operation amount (the amount of power supplied from the power supply source 24 to the cooling device 40) for the cooling device 40 that cancels the deviation between the temperature and the target temperature is sequentially determined, and the power of the power amount is supplied to the cooling device 40. Operation signals for performing various operations
The temperature of the cooling plate 41 is controlled by feedback control while operating the operating device 45 to perform cooling processing on the substrate W.

The temperature control of the cooling plate 41 is performed for all the substrates W accommodated in the integrated cassette 4 and subjected to the same processing.
A cooling process having the same temperature gradient as shown in FIG. By performing such control, the temperature decreasing rate, that is, the gradient of the temperature decrease for each substrate can be made the same, and the temperature history for each substrate can be made the same.

Here, the case of the cooling processing unit CP2 has been described as an example, but each cooling processing unit CP1, CP3, CP4
In this case, the same cooling control as that of CP2 is performed, the rate of temperature decrease for each substrate, that is, the gradient of temperature decrease can be made the same, the temperature history for each substrate can be made the same, and the uniformity of the film thickness after resist application and the like. The line width uniformity after development can be improved.

<4. Configuration of Heating / Cooling Processing Unit> Next, the configuration of another form of the heating / cooling processing unit that can constitute the substrate processing apparatus of the present invention will be described with reference to FIG. The heating / cooling processing unit illustrated in FIG. 7 is configured to be capable of performing the cooling processing of the substrate after the heating processing together with the heating processing of the substrate.

The heating / cooling processing section shown in FIG. 7 includes a mounting plate 61 for supporting the substrate W on the upper surface and performing a heating process or a cooling process on the substrate W, and a mica heater for heating the mounting plate 61. 60, an operating device 85 for operating electric power from the power supply source 24 including a power supply box and a utility of the factory to the heating device 60, and a cooling liquid flow path 73 formed below the heating device 60. The lower plate 71, a heat exchanger 78 in which cooling water is sent from a cooling unit 77 by a pump 79 to cool the cooling liquid to a predetermined temperature, A pump 75 that circulates the coolant 78, a variable valve 74 that adjusts the flow rate of the circulating coolant, a check valve 76, a controller 62, and the like are provided. When performing the cooling process on the substrate, the mounting plate 61 is cooled by the cooling liquid flowing through the flow path 73 of the lower plate 71. A temperature sensor (not shown) for detecting the temperature of the mounting plate is provided in the mounting plate 61.

The controller 62 includes a control constant determining unit 69 corresponding to a control mode determining unit having a memory 82, and a CP control unit 70 and an HP controlling unit 80 each corresponding to a temperature control unit. The controller 62 is composed of, for example, a microcomputer that executes processing control of each unit 69, 70, 80 according to a program.

With such a configuration, the heating / cooling processing section determines the control mode of heating and cooling as described below, and performs heating and cooling of the substrate W. That is, first, before processing the substrate, the target temperature of the heating and cooling processing is set by the setting mechanism 23 and the weight of the reference substrate W (hereinafter, “reference weight”).
) And corresponding PID constants for the heating control and the cooling control are set and stored in the memory 82 of the control constant determination unit 69 of the controller 62. Then, as described above, when the unprocessed substrate W is taken out by the substrate holding arm 7, the data of the weight of the substrate W measured by the electronic balance 11 is transmitted to the control constant determination unit 69 of the controller 62, and 82.

The control constant determination unit 69 compares the reference weight data stored in the memory 82 with the data of the weight of the substrate W measured this time, and if it is determined that the weight is light, the PID of the substrate of the reference weight is determined. By changing the constants, a PID constant is determined such that an output with a reduced gain is obtained so as to obtain a gradient of temperature rise and a gradient of temperature decrease similar to the reference weight substrate, and stores them in the memory 82. Conversely, if it is determined that the weight is heavy, the control constant determination unit 69 changes the PID constant of the substrate of the reference weight so that the same gradient of temperature rise and temperature gradient as the substrate of the reference weight can be obtained. Is determined so that an output with increased gain is obtained.
It is stored in the memory 82. When heating and cooling the substrate W, the determined PID constant is sent to the HP control unit 80 and the CP control unit 70 together with the target temperature as a control constant.

In HP control section 80, control constant determination section 69
When the PID constant and the target temperature are given from the control unit, the current temperature of the mounting plate 61 is monitored by a detection signal from a temperature sensor (not shown), and the mounting plate 61 is determined using the PID constant determined by the control constant determining unit 69. The operation amount (the amount of power supplied from the power supply source 24 to the heating device 60) for the heating device 60 that cancels the deviation between the current temperature and the target temperature is sequentially determined, and the power of the power amount is supplied to the heating device 60. The operation device 8 performs an operation signal for performing an operation to give
5, the temperature of the mounting plate 61 is controlled by feedback control while operating the operating device 85, and the substrate W
Is performed. When the heating of the mounting plate 61 is controlled, the variable valve 74 is throttled, and the flow of the coolant through the flow path 73 of the lower plate 71 is shut off.

Such temperature control of the mounting plate 61 is performed for all the substrates W accommodated in the integrated cassette 4 and subjected to the same processing, so that all the substrates W have the same temperature rise gradient. Heat treatment is performed. By performing such control, the rate of temperature rise, that is, the gradient of temperature rise for each substrate can be made similar, and the temperature history for each substrate can be made similar.

When the heating process on the mounting plate 61 for the substrate W is completed, the power supply to the heating device 60 is stopped, and the cooling process is continued on the mounting plate 61 as it is. In the CP control unit 70, the PI supplied from the control constant determination unit 69
Based on the D constant and the target temperature, the current temperature of the mounting plate 61 is monitored by a detection signal from a temperature sensor (not shown), and the current temperature of the cooling plate 1 is determined using the PID constant determined by the control constant determining unit 69. Variable valve 7 so that the flow rate of the cooling liquid cancels the deviation between the temperature and the target temperature.
The temperature of the mounting plate 61 is controlled by feedback control while operating the variable valve 74 by sequentially determining the opening / closing amount of the substrate 4, and the substrate W is cooled.

Such temperature control of the mounting plate 41 is performed on all the substrates W accommodated in the integrated cassette 4 and subjected to the same processing, so that all the substrates W have the same temperature gradient. Cooling process is performed. By performing such control, the temperature decreasing rate, that is, the gradient of the temperature decrease for each substrate can be made the same, and the temperature history for each substrate can be made the same.

In the above-described embodiment, the weight of the substrate W is measured by the electronic balance 11 provided on the substrate holding arm 7 of the indexer ID, and the heating control or the cooling is performed based on the measured data of the weight of the substrate W. Although the control is performed, there is a correlation between the thickness and the weight of the substrate W (when the thickness is larger than the reference substrate, the weight is also heavier than the reference substrate, and conversely, the reference is used). When the thickness is smaller than the thickness of the substrate, the weight is also smaller than the weight of the reference substrate. Therefore, as shown in FIG. 8, the CCD is mounted via the bracket 90 at a position on the integrated cassette 4 side of the substrate transport mechanism 6 of the indexer ID. When the camera 91 is attached and the substrate holding arm 7 takes out the unprocessed substrate W from the integrated cassette 4, the substrate W is photographed and the thickness of the substrate W is measured, and the control is set based on the measured thickness of the substrate W. Determining unit determines the PID constants corresponding to the thickness at 29,49,69, may be performed similar heating control or cooling control in the case of weighing. Here, the CCD camera 91 corresponds to a thickness measuring unit.

In the above embodiment, the electronic balance 11 and the CCD camera 91 are provided on the substrate holding arm 7 and the substrate transfer mechanism 6 to measure the weight and thickness of the substrate W when unprocessed substrates are taken out by the substrate holding arm. Although the heating control or the cooling control is performed on the basis thereof, for example, when the weight and thickness of the substrate to be processed are known, the weight and thickness data are input to the controller through the setting mechanism 23. Alternatively, heating control or cooling control may be performed based on the control.

[0072]

According to the present invention, the thermal history of each substrate can be made constant.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating an overall configuration of a substrate processing apparatus according to an embodiment.

FIG. 2 is a diagram showing a flow of processing in the substrate processing apparatus in the embodiment.

FIG. 3 is a schematic side sectional view showing an indexer included in the substrate processing apparatus according to the embodiment.

FIG. 4 is a diagram illustrating a heat treatment unit included in the substrate processing apparatus according to the embodiment.

FIG. 5 is an explanatory diagram showing a thermal gradient of a substrate.

FIG. 6 is a diagram illustrating a cooling processing unit included in the substrate processing apparatus according to the embodiment.

FIG. 7 is a diagram illustrating a configuration of a heating / cooling processing unit included in the substrate processing apparatus according to the embodiment.

FIG. 8 is a diagram illustrating another example of the indexer included in the substrate processing apparatus according to the embodiment.

[Explanation of symbols]

 2 Integrated cassette 6 Substrate transfer mechanism 7 Substrate holding arm 11 Electronic balance 20, 60 Heating device 21 Heating plate 22, 42, 62 Controller 29, 49, 69 Control constant determination unit 30, 80 HP control unit 40 Cooling device 41 Cooling plate 50, 70 CP control section 61 Mounting plate 73 Flow path 32 Copy operation designation section

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05B 3/00 310 H05B 3/00 310E 5F046 3/68 3/68 H01L 21/30 567 F term (reference) 2H025 AB16 AB17 EA01 EA04 EA10 FA01 FA12 2H096 AA25 AA27 GB03 GB07 GB10 3K058 AA00 AA64 AA82 BA00 CA05 CA12 CA23 CA31 CB12 CB15 CB22 CB34 CE13 CE19 CE21 3K092 PP20 QA05 QB32 GA27 VCA073 HA38 JA04 JA45 JA46 MA24 MA26 MA27 NA02 NA09 5F046 JA04 JA22 KA04 KA07 LA01 LB09

Claims (16)

[Claims] A heating plate that is heated by a heating unit, supports a substrate, and performs a heating process on the substrate, and a control mode determining unit that determines a heating control mode according to the weight of each substrate before the heating process. A substrate processing apparatus comprising: a temperature control unit that controls the heating unit based on the control mode determined by the control mode determination unit and guides the temperature of the heating plate to a predetermined target temperature. 2. The substrate processing apparatus according to claim 1, further comprising a weight measuring means for measuring the weight of each substrate before the heat treatment. 3. The substrate processing apparatus according to claim 1, wherein the temperature control unit performs PID control on a temperature of the heating plate, and the control mode determination unit determines an individual temperature before the heating process. A substrate processing apparatus, wherein a PID constant of the PID control is determined according to a weight of a substrate. 4. The substrate processing apparatus according to claim 2, wherein the weight measuring unit is provided in a substrate transport unit that takes out the substrate from the substrate storage container, and when the substrate is taken out from the substrate storage container. A substrate processing apparatus for measuring the weight of a substrate. 5. A heating plate which is heated by the heating means, supports the substrate and performs a heating process on the substrate, and a control mode determining means for determining a heating control mode according to the thickness of each substrate before the heating process. A substrate processing apparatus comprising: a temperature control unit that controls the heating unit based on the control mode determined by the control mode determination unit and guides the temperature of the heating plate to a predetermined target temperature. 6. The substrate processing apparatus according to claim 5, further comprising a thickness measuring means for measuring the thickness of each substrate before the heat treatment. 7. The substrate processing apparatus according to claim 5, wherein the temperature control unit performs PID control on a temperature of the heating plate, and the control mode determination unit determines an individual temperature before the heating process. A substrate processing apparatus, wherein a PID constant of the PID control is determined according to a thickness of a substrate. 8. The substrate processing apparatus according to claim 6, wherein the thickness measuring unit is provided in a substrate transport unit that takes out the substrate from the substrate storage container, and when the substrate is taken out from the substrate storage container. A substrate processing apparatus for measuring a thickness of a substrate. 9. A cooling plate that is cooled by a cooling unit, supports a substrate, and performs a cooling process on the substrate, and a control mode determining unit that determines a cooling control mode according to the weight of each substrate before the cooling process. A substrate processing apparatus comprising: a temperature control unit that controls the cooling unit based on the control mode determined by the control mode determination unit and guides the temperature of the cooling plate to a predetermined target temperature. 10. The substrate processing apparatus according to claim 9, further comprising a weight measuring means for measuring the weight of each substrate before the cooling process. 11. The substrate processing apparatus according to claim 9, wherein said temperature control means controls a temperature of said cooling plate by P.
A substrate processing apparatus which performs ID control, and wherein the control mode control means determines a PID constant of the PID control according to the weight of each substrate before the cooling heat treatment. 12. The substrate processing apparatus according to claim 10, wherein the weight measuring unit is provided in a substrate transport unit that takes out the substrate from the substrate storage container, and when the substrate is taken out from the substrate storage container. A substrate processing apparatus for measuring the weight of a substrate. 13. A cooling plate that is cooled by a cooling unit, supports a substrate, and performs a cooling process on the substrate, and a control mode determining unit that determines a cooling control mode according to the thickness of each substrate before the cooling process. A substrate processing apparatus comprising: a temperature control unit that controls the cooling unit based on the control mode determined by the control mode determination unit and guides the temperature of the cooling plate to a predetermined target temperature. 14. The substrate processing apparatus according to claim 13, further comprising a thickness measuring means for measuring the thickness of each substrate before the cooling process. 15. The substrate processing apparatus according to claim 13, wherein the temperature control unit performs PID control on a temperature of the cooling plate, and the control mode determination unit determines an individual temperature before the cooling process. A substrate processing apparatus, wherein a PID constant of the PID control is determined according to a weight of a substrate. 16. The substrate processing apparatus according to claim 14, wherein said thickness measuring means is provided in a substrate transporting means for taking out the substrate from the substrate storage container. A substrate processing apparatus for measuring a thickness of a substrate.