JP2020063186A5 - - Google Patents
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- JP2020063186A5 JP2020063186A5 JP2019161167A JP2019161167A JP2020063186A5 JP 2020063186 A5 JP2020063186 A5 JP 2020063186A5 JP 2019161167 A JP2019161167 A JP 2019161167A JP 2019161167 A JP2019161167 A JP 2019161167A JP 2020063186 A5 JP2020063186 A5 JP 2020063186A5
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019161167A JP7184719B2 (ja) | 2019-09-04 | 2019-09-04 | ＳｉＣエピタキシャルウェハ |
| JP2022186625A JP7396442B2 (ja) | 2019-09-04 | 2022-11-22 | ＳｉＣ基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019161167A JP7184719B2 (ja) | 2019-09-04 | 2019-09-04 | ＳｉＣエピタキシャルウェハ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018194020A Division JP6585799B1 (ja) | 2018-10-15 | 2018-10-15 | ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022186625A Division JP7396442B2 (ja) | 2019-09-04 | 2022-11-22 | ＳｉＣ基板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020063186A JP2020063186A (ja) | 2020-04-23 |
| JP2020063186A5 true JP2020063186A5 (cg-RX-API-DMAC7.html) | 2021-11-18 |
| JP7184719B2 JP7184719B2 (ja) | 2022-12-06 |
Family
ID=70388098
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019161167A Active JP7184719B2 (ja) | 2019-09-04 | 2019-09-04 | ＳｉＣエピタキシャルウェハ |
| JP2022186625A Active JP7396442B2 (ja) | 2019-09-04 | 2022-11-22 | ＳｉＣ基板 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022186625A Active JP7396442B2 (ja) | 2019-09-04 | 2022-11-22 | ＳｉＣ基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP7184719B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7552246B2 (ja) * | 2020-10-19 | 2024-09-18 | 株式会社レゾナック | ＳｉＣ基板の評価方法、ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣデバイスの製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5445694B2 (ja) | 2011-04-21 | 2014-03-19 | 新日鐵住金株式会社 | エピタキシャル炭化珪素単結晶基板の製造方法 |
| JP6758197B2 (ja) | 2015-01-28 | 2020-09-23 | 東レエンジニアリング株式会社 | ワイドギャップ半導体基板の欠陥検査方法及び欠陥検査装置 |
| JP2015129087A (ja) | 2015-02-06 | 2015-07-16 | 住友電気工業株式会社 | 炭化珪素基板 |
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2019
- 2019-09-04 JP JP2019161167A patent/JP7184719B2/ja active Active
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2022
- 2022-11-22 JP JP2022186625A patent/JP7396442B2/ja active Active