JP2020042223A - Photosensitive resin composition, photosensitive film, cured product, device and method for forming resist pattern - Google Patents

Abstract

To provide a photosensitive resin composition that can form a resist pattern having excellent resolution, adhesion and HAST resistance, even with respect to a photosensitive layer having a thickness of more than 20 μ.SOLUTION: A photosensitive resin composition of the invention contains (A) component: novolac resin having a phenolic hydroxyl group, (B) component: a compound having two or more oxirane rings, (C) component: a photosensitive acid generator containing at least one onium salt selected from the group consisting of onium borate salt and onium gallate salt, (D) component: solvent, the content of (B) component being 40-300 pts.mass with respect to (A) component 100 pts.mass.SELECTED DRAWING: None

Description

  The present invention relates to a photosensitive resin composition, a photosensitive film, a cured product, a device, and a method for forming a resist pattern.

  In the production of semiconductor elements or printed wiring boards, for example, a negative photosensitive resin composition is used to form a fine pattern. In this method, a photosensitive layer is formed on a base material (a chip in the case of a semiconductor element, a substrate in the case of a printed wiring board) by applying a photosensitive resin composition or the like, and irradiating active light through a predetermined pattern. To cure the exposed part. Further, a resist pattern, which is a cured film of the photosensitive resin composition, is formed on the substrate by selectively removing the unexposed portions using a developer. Therefore, the photosensitive resin composition is required to have high sensitivity to actinic rays and to be capable of forming a fine pattern (resolution). Therefore, a photosensitive resin composition containing a novolak resin, an epoxy resin and a photoacid generator soluble in an aqueous alkali solution, a photosensitive resin composition containing an alkali-soluble epoxy compound having a carboxyl group and a photocationic polymerization initiator, etc. (For example, see Patent Documents 1 and 2).

  A surface protection film and an interlayer insulating film used for a semiconductor element are required to have insulation reliability such as heat resistance, electric characteristics, and mechanical characteristics. Therefore, a photosensitive resin composition further containing a crosslinkable monomer in the photosensitive resin composition has been proposed (for example, see Patent Document 3).

On the other hand, in recent years, with higher performance of electronic devices, higher integration and higher reliability of semiconductor elements have been progressing year by year. 2. Description of the Related Art As semiconductor devices become highly integrated, formation of finer patterns and thinning of the entire semiconductor device are required. However, in thinning the entire semiconductor element, warpage caused by a difference in thermal expansion coefficient between the chip and the surface protective film or the interlayer insulating film is a major problem. It is strongly required to have a coefficient of thermal expansion close to the coefficient of thermal expansion (3 × 10 ⁻⁶ / ° C.), that is, to decrease the coefficient of thermal expansion. Then, in order to achieve a low thermal expansion of the photosensitive resin composition, for example, a photosensitive resin composition containing an inorganic filler has been proposed (for example, see Patent Document 4).

JP-A-09-087366 WO 2008/010521 JP 2003-215802 A JP 2011-13622 A

  By forming the interlayer insulating film thickly, insulation between wirings in the thickness direction of the layer is improved, and short-circuiting of wirings can be prevented, so that reliability regarding insulation between wirings is improved. When a chip is mounted, since the semiconductor element has a thick interlayer insulating film, the stress applied to the pad of the solder bump can be reduced, so that a connection failure hardly occurs at the time of mounting. Therefore, it is required to form a cured film of a photosensitive resin composition exceeding 20 μm from the viewpoint of insulation reliability and productivity in mounting a chip. However, in the conventional photosensitive resin composition, when the thickness of the photosensitive layer is increased, good resolution may not be obtained, or sufficient adhesion may not be obtained.

  Further, with the narrowing of the wiring pitch, it is strongly required for the photosensitive resin composition to improve the HAST (Highly Accelerated Temperature and Humidity Stress Test) resistance of the cured product. However, conventional photosensitive resin compositions have room for improvement in HAST resistance. In particular, the importance of insulation reliability between fine wirings is increasing, and the temperature is 130 ° C. compared to the conventional test in which a voltage is applied at 85 ° C. and 60% RH or a voltage applied at 85 ° C. and 85% RH. , 85% RH, etc., the test temperature is high, and the resistance in the HAST test under severe conditions is required.

  The present invention solves the problems associated with the prior art as described above, and enables a photosensitive resin capable of forming a resist pattern having excellent resolution, adhesion, and HAST resistance even with a photosensitive layer having a thickness exceeding 20 μm. It is intended to provide a composition.

  The photosensitive resin composition of the present invention comprises (A) a novolak resin having a phenolic hydroxyl group, (B) a compound having two or more oxirane rings, and (C) a onium borate salt and an onium gallate salt. And a photosensitive acid generator containing at least one onium salt selected from the group consisting of: component (D): a solvent, wherein the content of component (B) is 100 parts by mass relative to component (A). 40 to 300 parts by mass.

  The onium salt may include at least one cation selected from the group consisting of iodonium and sulfonium. The component (B) may include a compound having three or more glycidyl ether groups.

  The photosensitive resin composition of the present invention may further contain (E) a compound having a methylol group or an alkoxyalkyl group.

  The photosensitive film of the present invention includes a support, and a photosensitive layer provided on the support and formed from the above-described photosensitive resin composition.

  The cured product according to the present invention is a cured product of the photosensitive resin composition. The cured product of the present invention can be suitably used as an insulating film (surface protective film, solder resist, interlayer insulating film, etc.). A device according to the present invention includes the above cured product.

  The first embodiment of the method of forming a resist pattern according to the present invention includes a step of forming the photosensitive layer by applying the photosensitive resin composition on a substrate and drying the applied photosensitive resin composition. The method includes a step of performing a heat treatment after exposing the layer to a predetermined pattern, a step of developing the photosensitive layer after the heat treatment to obtain a resin pattern, and a step of heating the resin pattern.

  A second embodiment of the method of forming a resist pattern according to the present invention includes a step of disposing a photosensitive layer of the photosensitive film on a substrate, a step of exposing the photosensitive layer to a predetermined pattern, and a heat treatment; The method includes a step of developing a photosensitive layer later to obtain a resin pattern, and a step of heat-treating the resin pattern.

  According to the photosensitive resin composition of the present invention, a resist pattern excellent in resolution, adhesion, and HAST resistance can be formed even with a photosensitive layer having a thickness exceeding 20 μm.

  Hereinafter, an embodiment of the present invention will be specifically described, but the present invention is not limited thereto.

  In this specification, the terms “layer” and “film” refer to not only a structure formed over the entire surface but also a structure partially formed when observed as a plan view. Included. The term “step” is included in the term as well as an independent step, even if it is not clearly distinguishable from other steps, provided that the intended purpose of that step is achieved. The numerical range indicated by using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively.

[Photosensitive resin composition]
The photosensitive resin composition according to the present embodiment includes (A) a novolak resin having a phenolic hydroxyl group, (B) a compound having two or more oxirane rings, and (C) a onium borate salt and an onium gallate. A photosensitive acid generator containing at least one onium salt selected from the group consisting of salts; and component (D): a solvent. In the photosensitive resin composition, the content of the component (B) is 40 to 300 parts by mass based on 100 parts by mass of the component (A).

  Even if a photosensitive layer having a thickness of more than 20 μm is formed by the photosensitive resin composition of the present embodiment, the inventors of the present invention explained why a resist pattern having excellent resolution, adhesion, and HAST resistance can be obtained. Thinks as follows. First, in the unexposed area, the solubility of the component (A) in the developing solution is significantly improved by the addition of the component (B). Next, in the exposed portion, the acid generated from the component (C) causes not only two or more oxirane rings in the component (B) to react and crosslink, but also reacts with the phenolic hydroxyl group of the component (A) to develop. The solubility of the composition in the liquid is greatly reduced. Thereby, when developed, the difference in solubility between the unexposed portion and the exposed portion in the developing solution becomes remarkable, sufficient resolution is obtained, and the component (B) is obtained by heat-treating the resin pattern after development. Cross-linking and the reaction with the component (A) further proceed to obtain a resist pattern having a high adhesion strength. By using a specific photosensitive acid generator as the component (B), the HAST resistance of the resist pattern can be improved. The inventors presume that it will improve.

((A) component)
The novolak resin having a phenolic hydroxyl group as the component (A) is not particularly limited, but is preferably a resin soluble in an aqueous alkaline solution. Such a novolak resin is obtained by condensing a phenol and an aldehyde in the presence of a catalyst.

  Examples of phenols include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, m-ethylphenol, p-ethylphenol, o-butylphenol, m-butylphenol, p-butylphenol, 2, 3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol, 2,3,5-trimethylphenol, 3,4,5-trimethyl Phenol, catechol, resorcinol, pyrogallol, α-naphthol and β-naphthol.

  Aldehydes include, for example, formaldehyde, paraformaldehyde, acetaldehyde and benzaldehyde.

  Specific examples of such a novolak resin include a phenol / formaldehyde condensed novolak resin, a cresol / formaldehyde condensed novolak resin, and a phenol-naphthol / formaldehyde condensed novolak resin. These resins can be used alone or in combination of two or more.

  The component (A) may contain an alkali-soluble resin other than the novolak resin within a range not departing from the effects of the present invention. Examples of the alkali-soluble resin other than the novolak resin include polyhydroxystyrene and its copolymer, phenol-xylylene glycol condensed resin, cresol-xylylene glycol condensed resin, and phenol-dicyclopentadiene condensed resin.

  The component (A) preferably has a weight average molecular weight (Mw) of 100,000 or less, from 1,000 to 80,000, from the viewpoint of resolution, developability, thermal shock resistance, heat resistance, and the like of the obtained cured film. Is more preferably, 2,000 to 50,000, still more preferably 2,000 to 20,000, and most preferably 5,000 to 15,000.

  In the photosensitive resin composition of the present embodiment, the content of the component (A) is preferably 15 to 90 parts by mass based on 100 parts by mass of the total amount of the photosensitive resin composition excluding the component (D). And more preferably from 20 to 80 parts by mass, and still more preferably from 25 to 75 parts by mass. When the content of the component (A) is within the above range, a film formed using the obtained photosensitive resin composition is more excellent in adhesion.

((B) component)
The compound having two or more oxirane rings, which is the component (B), is preferably a compound having two or more glycidyl ether groups, and more preferably a compound having three or more glycidyl ether groups.

  The component (B) may include an aliphatic or alicyclic epoxy compound having two or more oxirane rings as (b-1). (B-1) is preferably an epoxy compound having a weight average molecular weight of 1,000 or less.

  Examples of (b-1) include ethylene glycol diglycidyl ether, diethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, tripropylene glycol diglycidyl ether, neopentyl glycol diglycidyl ether, and 1,6-hexanediol diglycidyl ether. Glycerin diglycidyl ether, pentaerythritol tetraglycidyl ether, trimethylolethane triglycidyl ether, trimethylolpropane triglycidyl ether, glycerol propoxylate triglycidyl ether, dicyclopentadiene dioxide, 1,2,5,6-diepoxycyclo Octane, 1,4-cyclohexanedimethanol diglycidyl ether, diglycidyl 1,2-cyclohexane Sanji carboxylate, 3,4-epoxycyclohexylmethyl 3 ', 4'-epoxycyclohexane carboxylate, and a bis (3,4-epoxycyclohexylmethyl) adipate and cyclohexene oxide type epoxy resin. Among them, trimethylolethane triglycidyl ether or trimethylolpropane triglycidyl ether is preferable as (b-1) in terms of excellent sensitivity and resolution.

  (B-1) is, for example, Epolite 40E, Epolite 100E, Epolite 70P, Epolite 200P, Epolite 1500NP, Epolite 1600, Epolite 80MF, Epolite 100MF (all of which are trade names of Kyoeisha Chemical Co., Ltd.), alkyl epoxy resin ZX- Commercially available as 1542 (trade name of Nippon Steel & Sumikin Chemical Co., Ltd.), Denacol EX-212L, Denacol EX-214L, Denacol EX-216L, Denacol EX-321L, and Denacol EX-850L (all trade names of Nagase Chemtech Co., Ltd.) Is available. (B-1) can be used alone or in combination of two or more.

  The component (B) may contain an aromatic epoxy compound having two or more oxirane rings as (b-2). Examples of (b-2) include a bisphenol A epoxy resin, a polyfunctional bisphenol A novolak epoxy resin, a bisphenol F epoxy resin, an o-cresol novolak epoxy resin, and a biphenylphenol novolak epoxy resin.

  (B-2) is, for example, EPON SU-8 (trade name of Resolution Performance Products), NER-7604, NER-1302, and NC-3000H (all trade names of Nippon Kayaku Co., Ltd.) It is commercially available as

  The content of (b-1) and (b-2) in the component (B) is preferably from 0 to 200 parts by mass of (b-1) with respect to 100 parts by mass of (b-2), and is preferably from 5 to 200 parts by mass. The amount is more preferably 150 parts by mass, further preferably 10 to 120 parts by mass, and particularly preferably 15 to 100 parts by mass.

  The content of the component (B) is 40 to 300 parts by mass, preferably 50 to 290 parts by mass, and more preferably 70 to 280 parts by mass with respect to 100 parts by mass of the component (A). , 100 to 280 parts by mass. When the content of the component (B) is 40 parts by mass or more, the crosslinking in the exposed portion is sufficient, so that the resolution is more easily improved. When the content is 300 parts by mass or less, the photosensitive resin composition is coated on a desired support. There is a tendency that the film is easily formed and the resolution is hardly reduced.

((C) component)
The photosensitive acid generator as the component (C) is a compound that generates an acid upon irradiation with actinic rays or the like. Due to the catalytic effect of the acid generated from the photosensitive acid generator, not only do the components (B) react with each other, but also the component (B) reacts with the phenolic hydroxyl group of the component (A), and the composition of The solubility is greatly reduced, and a negative pattern can be formed.

  The component (C) contains at least one onium salt selected from the group consisting of onium borate salts and onium gallate salts. The onium salt preferably contains at least one cation selected from the group consisting of iodonium and sulfonium. As the component (C), one type can be used alone, or two or more types can be used in combination.

  The onium borate salt may include an anion having a tetraphenyl borate skeleton. The hydrogen atom of the phenyl group of the tetraphenylborate skeleton is a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a cyano group, a nitro group, a hydroxy group, an alkyl group having 1 to 12 carbon atoms, and an alkoxy group having 1 to 12 carbon atoms. May be substituted with at least one kind selected from the group consisting of an alkylcarbonyl group having 2 to 12 carbon atoms and an alkoxycarbonyl group having 2 to 12 carbon atoms. May be different.

  The anion having a tetraphenylborate skeleton may be tetrakis (pentafluorophenyl) borate, because it is more excellent in HAST resistance and sensitivity.

  The onium borate salt may include a cation having an alkylsulfonate skeleton. The hydrogen atom of the alkylsulfonate skeleton is at least one selected from the group consisting of a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a cyano group, a nitro group, a hydroxy group, an alkoxy group, an alkylcarbonyl group, and an alkoxycarbonyl group. And when there are a plurality of substituents, they may be the same or different from each other. The hydrogen atom of the phenyl group of the phenylsulfonate skeleton is a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a cyano group, a nitro group, a hydroxy group, an alkyl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, It may be substituted with at least one kind selected from the group consisting of an alkylcarbonyl group having 2 to 12 carbon atoms and an alkoxycarbonyl group having 2 to 12 carbon atoms. Or different.

  Examples of the cation having an alkylsulfonate skeleton include triphenylsulfonium, 4-t-butylphenyl-diphenylsulfonium, diphenyl [4- (phenylthio) phenyl] sulfonium, and [4- (4-biphenylylthio) phenyl] -4. -Biphenylylphenylsulfonium, (2-methyl) phenyl [4- (4-biphenylylthio) phenyl] 4-biphenylylsulfonium, [4- (4-biphenylylthio) -3-methylphenyl] 4-biphenylyl Phenylsulfonium, (2-methyl) phenyl [4- (4-biphenylylthio) -3-methylphenyl] 4-biphenylylsulfonium, (2-methoxy) phenyl [4- (4-biphenylylthio) -3- Methoxyphenyl] 4-biphenylylsulfonium, (2 Ethoxy) phenyl [4- (4-biphenylylthio) -3-ethoxyphenyl] 4-biphenylylsulfonium, (2-butoxy) phenyl [4- (4-biphenylylthio) -3-butoxyphenyl] 4-biphenyl Rylsulfonium, tris [4- (4-acetylphenylsulfanyl) phenyl] sulfonium, tris [4- (4-acetyl-3-methylphenylthio) phenyl] sulfonium, tris [4- (4-acetyl-3-ethylphenyl) Thio) phenyl] sulfonium and triarylsulfonium such as tris [4- (4-acetyl-3-butylphenylthio) phenyl] sulfonium.

  Specific examples of the onium borate salt containing an anion having a tetraphenylborate skeleton and a cation having an alkylsulfonate skeleton include triphenylsulfoniumtetrakis (pentafluorophenyl) borate, triphenylsulfoniumtetraphenylborate, and 4-t-butyl. Phenyl-diphenylsulfonium tetrakis (pentafluorophenyl) borate, 4-t-butylphenyl-diphenylsulfonium tetraphenylborate, diphenyl [4- (phenylthio) phenyl] sulfonium tetrakis (pentafluorophenyl) borate, diphenyl [4- (phenylthio) [Phenyl] sulfonium tetraphenylborate, [4- (4-biphenylylthio) phenyl] -4-biphenylylphenylsulfonium Trakis (pentafluorophenyl) borate, [4- (4-biphenylylthio) phenyl] -4-biphenylylphenylsulfonium tetraphenylborate, (2-methyl) phenyl [4- (4-biphenylylthio) phenyl] 4 -Biphenylylsulfoniumtetrakis (pentafluorophenyl) borate, (2-methyl) phenyl [4- (4-biphenylylthio) phenyl] 4-biphenylylsulfoniumtetraphenylborate, [4- (4-biphenylylthio)- 3-Methylphenyl] 4-biphenylylphenylsulfoniumtetrakis (pentafluorophenyl) borate, [4- (4-biphenylylthio) -3-methylphenyl] 4-biphenylylphenylsulfoniumtetraphenylborate, (2-methyl) Phenyl 4- (4-biphenylylthio) -3-methylphenyl] 4-biphenylylsulfoniumtetrakis (pentafluorophenyl) borate, (2-methyl) phenyl [4- (4-biphenylylthio) -3-methylphenyl] 4-biphenylylsulfonium tetraphenylborate, (2-methoxy) phenyl [4- (4-biphenylylthio) -3-methoxyphenyl] 4-biphenylylsulfoniumtetrakis (pentafluorophenyl) borate, (2-methoxy) phenyl [4- (4-Biphenylylthio) -3-methoxyphenyl] 4-biphenylylsulfonium tetraphenylborate, (2-ethoxy) phenyl [4- (4-biphenylylthio) -3-ethoxyphenyl] 4-biphenyl Rylsulfonium tetrakis (pentafluorop Enyl) borate, (2-ethoxy) phenyl [4- (4-biphenylylthio) -3-ethoxyphenyl] 4-biphenylylsulfoniumtetraphenylborate, (2-butoxy) phenyl [4- (4-biphenylylthio) ) -3-Butoxyphenyl] 4-biphenylylsulfoniumtetrakis (pentafluorophenyl) borate, (2-butoxy) phenyl [4- (4-biphenylylthio) -3-butoxyphenyl] 4-biphenylylsulfoniumtetraphenylborate , Tris [4- (4-acetylphenylsulfanyl) phenyl] sulfonium tetrakis (pentafluorophenyl) borate, tris [4- (4-acetylphenylsulfanyl) phenyl] sulfonium methanesulfonate, tris [4- (4-acetylphenyl) Rusulfanyl) phenyl] sulfonium butanesulfonate, tris [4- (4-acetylphenylsulfanyl) phenyl] sulfonium octanesulfonate, tris [4- (4-acetylphenylsulfanyl) phenyl] sulfonium tetraphenylborate, tris [4- (4 -Acetylphenylsulfanyl) phenyl] sulfonium p-toluenesulfonate, tris [4- (4-acetylphenylsulfanyl) phenyl] sulfonium 10-camphorsulfonate, tris [4- (4-acetyl-3-methylphenylthio) phenyl] sulfonium Trifluoromethanesulfonate, tris [4- (4-acetyl-3-methylphenylthio) phenyl] sulfonium nonafluorobutanesulfonate, tris [4- 4-acetyl-3-methylphenylthio) phenyl] sulfonium heptadecafluorooctanesulfonate, tris [4- (4-acetyl-3-methylphenylthio) phenyl] sulfonium tetrakis (pentafluorophenyl) borate, tris [4- ( 4-acetyl-3-methylphenylthio) phenyl] sulfonium methanesulfonate, tris [4- (4-acetyl-3-methylphenylthio) phenyl] sulfonium butanesulfonate, tris [4- (4-acetyl-3-methylphenyl) Thio) phenyl] sulfonium octanesulfonate, tris [4- (4-acetyl-3-methylphenylthio) phenyl] sulfonium tetraphenylborate, tris [4- (4-acetyl-3-methylphenylthio) phenyl] sulfonium Ruphonium p-toluenesulfonate, tris [4- (4-acetyl-3-methylphenylthio) phenyl] sulfonium 10-camphorsulfonate, tris [4- (4-acetyl-3-ethylphenylthio) phenyl] sulfonium trifluoromethanesulfonate , Tris [4- (4-acetyl-3-ethylphenylthio) phenyl] sulfonium nonafluorobutanesulfonate, tris [4- (4-acetyl-3-ethylphenylthio) phenyl] sulfonium heptadecafluorooctanesulfonate, tris [ 4- (4-acetyl-3-ethylphenylthio) phenyl] sulfonium tetrakis (pentafluorophenyl) borate, tris [4- (4-acetyl-3-ethylphenylthio) phenyl] sulfonium methane Rufonate, tris [4- (4-acetyl-3-ethylphenylthio) phenyl] sulfonium butanesulfonate, tris [4- (4-acetyl-3-ethylphenylthio) phenyl] sulfonium octanesulfonate, tris [4- (4 -Acetyl-3-ethylphenylthio) phenyl] sulfonium tetraphenylborate, tris [4- (4-acetyl-3-ethylphenylthio) phenyl] sulfonium p-toluenesulfonate, tris [4- (4-acetyl-3-) Ethylphenylthio) phenyl] sulfonium 10-camphorsulfonate, tris [4- (4-acetyl-3-butylphenylthio) phenyl] sulfonium trifluoromethanesulfonate, tris [4- (4-acetyl-3-butylphenylthio) phenyl Nyl] sulfonium nonafluorobutanesulfonate, tris [4- (4-acetyl-3-butylphenylthio) phenyl] sulfonium heptadecafluorooctanesulfonate and tris [4- (4-acetyl-3-butylphenylthio) phenyl] sulfonium And tetrakis (pentafluorophenyl) borate.

  The onium gallate salt is not particularly limited as long as it has a cation containing a gallium atom. As the onium gallate salt, for example, an onium gallate salt described in JP-A-2017-48325 may be used.

The onium gallate salt may be an onium salt represented by the following general formula (11).

R ^{1 to} R ⁴ in the formula (11) each independently represent an alkyl group having 1 to 18 carbon atoms, an aryl group or a group having a heterocyclic ring, and at least one of R ^{1 to} R ⁴ is an aryl group It is. The aryl group may have a substituent. The carbon number of the aryl group (excluding the carbon number of the substituent) is from 6 to 14.

Examples of the alkyl group having 1 to 18 carbon atoms in R ^{1 to} R ⁴ include methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-octyl, n-decyl, n-dodecyl, n-tetradecyl, linear alkyl groups such as n-hexadecyl and n-octadecyl; isopropyl, isobutyl, sec-butyl, tert-butyl, isopentyl, neopentyl, tert-pentyl, isohexyl, 2-ethylhexyl, 1,1,3,3-tetramethyl A branched alkyl group such as butyl; a cycloalkyl group such as cyclopropyl, cyclobutyl, cyclopentyl and cyclohexyl; and a crosslinked cyclic alkyl group such as norbornyl, adamantyl and pinanyl. From the viewpoint of catalytic activity in the cationic polymerization reaction, an alkyl group substituted with a halogen atom, a nitro group or a cyano group is preferable, and an alkyl group substituted with a fluorine atom is more preferable.

  Examples of the aryl group having 6 to 14 carbon atoms include a monocyclic aryl group such as phenyl; and a condensed polycyclic aryl group such as naphthyl, anthracenyl, phenanthrenyl, anthraquinolyl, fluorenyl, and naphthoquinolyl. Examples of the heterocyclic group include monocyclic heterocyclic groups such as thienyl, furanyl, pyranyl, pyrrolyl, oxazolyl, thiazolyl, pyridyl, pyrimidyl, and pyrazinyl; and indolyl, benzofuranyl, isobenzofuranyl, benzothienyl, and isobenzothienyl. , Quinolyl, isoquinolyl, quinoxalinyl, quinazolinyl, carbazolyl, acridinyl, phenothiadinyl, phenazinyl, xanthenyl, thianthrenyl, phenoxazinyl, phenoxathiinyl, chromanyl, isochromanil, coumarinyl, dibenzothienyl, xanthonyl, thioxanthonyl, dibenzofuranyl, etc. Formula heterocyclic groups are mentioned. Part or all of the hydrogen atoms of the above-described groups may be an alkyl group having 1 to 18 carbon atoms, an alkyl group having 1 to 8 carbon atoms having a halogen atom, an alkenyl group having 2 to 18 carbon atoms, or an alkyl group having 2 to 18 carbon atoms. Alkynyl group, aryl group having 6 to 14 carbon atoms, nitro group, hydroxyl group, cyano group, alkoxy group having 1 to 8 carbon atoms, aryloxy group having 6 to 14 carbon atoms, acyl group having 1 to 8 carbon atoms, carbon number It may be substituted with a group such as an acyloxy group having 1 to 8 carbon atoms, an alkylthio group having 1 to 8 carbon atoms, an arylthio group having 6 to 14 carbon atoms, or an amino group.

  Examples of the alkenyl group having 2 to 18 carbon atoms include vinyl, allyl, 1-propenyl, 2-propenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1-methyl-1-propenyl, and 1-methyl-2. -Propenyl, 2-methyl-1-propenyl, 2-methyl-2-propenyl, 2-cyclohexenyl, 3-cyclohexenyl, styryl and cinnamyl.

  Examples of the alkynyl group having 2 to 18 carbon atoms include ethynyl, 1-propynyl, 2-propynyl, 1-butynyl, 2-butynyl, 3-butynyl, 1-methyl-2-propynyl, and 1,1-dimethyl-2. -Propynyl, 1-pentynyl, 2-pentynyl, 3-pentynyl, 4-pentynyl, 1-methyl-2-butynyl, 3-methyl-1-butynyl, 1-decynyl, 2-decynyl, 8-decynyl, 1- Dodecinyl, 2-dodecinyl, 10-dodecinyl and phenylethynyl.

  Examples of the alkyl group having 1 to 8 carbon atoms having a halogen atom include trifluoromethyl, trichloromethyl, pentafluoroethyl, 2,2,2-trichloroethyl, 2,2,2-trifluoroethyl, 1,1 -Difluoroethyl, heptafluoro-n-propyl, 1,1-difluoro-n-propyl, 3,3,3-trifluoro-n-propyl, nonafluoro-n-butyl, 3,3,4,4,4- Pentafluoro-n-butyl, perfluoro-n-pentyl, perfluoro-n-octyl, hexafluoroisopropyl, hexachloroisopropyl, hexafluoroisobutyl, nonafluoro-tert-butyl, pentafluorocyclopropyl, nonafluorocyclobutyl, perfluoro Cyclopentyl and perfluorocyclohexyl And it includes perfluoro adamantyl.

  Examples of the alkoxy group include methoxy, ethoxy, n-propoxy, iso-propoxy, n-butoxy, sec-butoxy, tert-butoxy, n-pentoxy, iso-pentoxy, neo-pentoxy and 2-methylbutoxy. . Aryloxy groups include, for example, phenoxy and naphthoxy. Acyl groups include, for example, acetyl, propanoyl, butanoyl, pivaloyl and benzoyl. Asiloxy groups include, for example, acetoxy, butanoyloxy and benzoyloxy. Examples of the alkylthio group include methylthio, ethylthio, butylthio, hexylthio, and cyclohexylthio. Arylthio groups include, for example, phenylthio and naphthylthio. Amino groups include methylamino, ethylamino, propylamino, dimethylamino, diethylamino, methylethylamino, dipropylamino, dipropylamino and piperidino. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.

  In these substituents, from the viewpoint of catalytic activity in the cationic polymerization reaction, a halogen atom-containing alkyl group having 1 to 8 carbon atoms, a halogen atom, a nitro group and a cyano group are preferable, and an alkyl group having 1 to 8 carbon atoms having a fluorine atom is preferable. Groups and fluorine atoms are more preferred.

The onium gallate salt may contain any of the gallate anions represented by the following formulas (A-1) to (A-5).

  The gallate anion can be synthesized by a known method, and can be obtained, for example, by reacting gallium (III) chloride with an organometallic compound such as an organolithium compound or an organomagnesium compound (Tetrahedron 58 (2002) 5267-). 5273).

E in the formula (11) represents a Group 15 element (nitrogen, phosphorus, arsenic, antimony, bismuth), a Group 16 element (oxygen, sulfur, selenium, tellurium, polonium) and a Group 17 element (fluorine) in IUPAC notation. , Chlorine, bromine, iodine, and astatine), and n is an integer of 1 to 3. R ⁵ represents an organic group, and the number of R ⁵ is n + 1. (N + 1) number of ^{R 5} may be the same or different from each other, two or more ^{R 5} may be bonded directly to, -O -, - S -, - SO -, - SO 2 A ring structure containing E may be formed via-, -NH-, -CO-, -COO-, -CONH-, an alkylene group or a phenylene group.

Examples of R ⁵ include an aryl group having 6 to 14 carbon atoms, an alkyl group having 1 to 18 carbon atoms, an alkenyl group having 2 to 18 carbon atoms, and an alkynyl group having 2 to 18 carbon atoms. The aryl group includes an alkyl group having 1 to 18 carbon atoms, an alkenyl group having 2 to 18 carbon atoms, an alkynyl group having 2 to 18 carbon atoms, an aryl group having 6 to 14 carbon atoms, a nitro group, a hydroxyl group, a cyano group, and an alkoxy group. , An aryloxy group, an acyl group, an acyloxy group, an alkylthio group, an arylthio group, an amino group or a halogen atom.

E combines with R ⁵ to form an onium ion (E ⁺ ). E is preferably oxygen (O), nitrogen (N), phosphorus (P), sulfur (S) or iodine (I). Corresponding cations include, for example, oxonium, ammonium, phosphonium, sulfonium and iodonium. Ammonium, phosphonium, sulfonium and iodonium are preferred as cations in terms of stability and easy handling, and sulfonium and iodonium are more preferred in terms of excellent cationic polymerization and crosslinking reactivity.

  Specific examples of oxonium include oxonium such as trimethyloxonium, diethylmethyloxonium, triethyloxonium, and tetramethylenemethyloxonium; 4-methylpyrrinium, 2,4,6-trimethylpyrrinium, 2,6-dioxo Pyrilinium such as -tert-butylpyrrilinium and 2,6-diphenylpyrrinium; and chromanium and isocromenium such as 2,4-dimethylchromenium and 1,3-dimethylisochromenium.

  Specific examples of ammonium include tetraalkylammonium such as tetramethylammonium, ethyltrimethylammonium, diethyldimethylammonium, triethylmethylammonium, and tetraethylammonium; N, N-dimethylpyrrolidinium, N-ethyl-N-methylpyrrolidinium , N, N-diethylpyrrolidinium and the like; N, N'-dimethylimidazolinium, N, N'-diethylimidazolinium, N-ethyl-N'-methylimidazolinium, 1,3,4 -Imidazoliniums such as trimethylimidazolinium, 1,2,3,4-tetramethylimidazolinium; tetrahydropyrimidiniums such as N, N'-dimethyltetrahydropyrimidinium; N, N'-dimethylmorpholine Morpholinium such as Piperidinium such as N, N'-diethylpiperidinium; pyridinium such as N-methylpyridinium, N-benzylpyridinium, N-phenacylpyridium; imidazolium such as N, N'-dimethylimidazolium; N-methyl Quinolium such as quinolium, N-benzylquinolium and N-phenacylquinolium; isoquinolium such as N-methylisoquinolium; thiazonium such as benzylbenzothiazonium and phenacylbenzothiazonium; benzylacridium and phena Acridium such as silacridium is exemplified.

  Specific examples of the phosphonium include tetraarylphosphoniums such as tetraphenylphosphonium, tetra-p-tolylphosphonium, tetrakis (2-methoxyphenyl) phosphonium, tetrakis (3-methoxyphenyl) phosphonium, and tetrakis (4-methoxyphenyl) phosphonium; Triarylphosphonium such as triphenylbenzylphosphonium, triphenylphenacylphosphonium, triphenylmethylphosphonium, triphenylbutylphosphonium; triethylbenzylphosphonium, tributylbenzylphosphonium, tetraethylphosphonium, tetrabutylphosphonium, tetrahexylphosphonium, triethylphenacylphosphonium, Tetraalkylphosphonium such as tributylphenacylphosphonium And the like.

  Specific examples of the sulfonium include triphenylsulfonium, tri-p-tolylsulfonium, tri-o-tolylsulfonium, tris (4-methoxyphenyl) sulfonium, 1-naphthyldiphenylsulfonium, 2-naphthyldiphenylsulfonium, tris (4- (Fluorophenyl) sulfonium, tri-1-naphthylsulfonium, tri-2-naphthylsulfonium, tris (4-hydroxyphenyl) sulfonium, 4- (phenylthio) phenyldiphenylsulfonium, 4- (p-tolylthio) phenyldi-p-tolylsulfonium 4- (4-methoxyphenylthio) phenylbis (4-methoxyphenyl) sulfonium, 4- (phenylthio) phenylbis (4-fluorophenyl) sulfonium, 4- (phenylthio) Phenylbis (4-methoxyphenyl) sulfonium, 4- (phenylthio) phenyldi-p-tolylsulfonium, [4- (4-biphenylylthio) phenyl] -4-biphenylylphenylsulfonium, [4- (2-thioxane Tonylthio) phenyl] diphenylsulfonium, bis [4- (diphenylsulfonio) phenyl] sulfide, bis [4- {bis [4- (2-hydroxyethoxy) phenyl] sulfonio} phenyl] sulfide, bis @ 4- [bis (4-fluorophenyl) sulfonio] phenyl} sulfide, bis {4- [bis (4-methylphenyl) sulfonio] phenyl} sulfide, bis {4- [bis (4-methoxyphenyl) sulfonio] phenyl} sulfide, 4- (4-benzoyl-2-chlorophenylthio ) Phenylbis (4-fluorophenyl) sulfonium, 4- (4-benzoyl-2-chlorophenylthio) phenyldiphenylsulfonium, 4- (4-benzoylphenylthio) phenylbis (4-fluorophenyl) sulfonium, 4- (4 -Benzoylphenylthio) phenyldiphenylsulfonium, 7-isopropyl-9-oxo-10-thia-9,10-dihydroanthracen-2-yldi-p-tolylsulfonium, 7-isopropyl-9-oxo-10-thia-9 , 10-Dihydroanthracen-2-yldiphenylsulfonium, 2-[(di-p-tolyl) sulfonio] thioxanthone, 2-[(diphenyl) sulfonio] thioxanthone, 4- (9-oxo-9H-thioxanthen-2- Yl) thiophenyl-9-o Oxo-9H-thioxanthen-2-yl phenylsulfonium, 4- [4- (4-tert-butylbenzoyl) phenylthio] phenyldi-p-tolylsulfonium, 4- [4- (4-tert-butylbenzoyl) phenylthio] Phenyldiphenylsulfonium, 4- [4- (benzoylphenylthio)] phenyldi-p-tolylsulfonium, 4- [4- (benzoylphenylthio)] phenyldiphenylsulfonium, 5- (4-methoxyphenyl) thiaanslenium, 5 Triarylsulfonium such as -phenylthianthrenium, 5-tolylthianthrenium, 5- (4-ethoxyphenyl) thianthrenium, 5- (2,4,6-trimethylphenyl) thianthrenium; diphenylphenacylsulfonium , Diarylsulfonium such as phenyl 4-nitrophenacylsulfonium, diphenylbenzylsulfonium, and diphenylmethylsulfonium; phenylmethylbenzylsulfonium, 4-hydroxyphenylmethylbenzylsulfonium, 4-methoxyphenylmethylbenzylsulfonium, 4-acetocarbonyloxyphenylmethylbenzylsulfonium 4-hydroxyphenyl (2-naphthylmethyl) methylsulfonium, 2-naphthylmethylbenzylsulfonium, 2-naphthylmethyl (1-ethoxycarbonyl) ethylsulfonium, phenylmethylphenacylsulfonium, 4-hydroxyphenylmethylphenacylsulfonium, 4 -Methoxyphenylmethylphenacylsulfonium, 4-acetocarbonyloxyphenyl Monoarylsulfonium such as dimethylphenacylsulfonium, 2-naphthylmethylphenacylsulfonium, 2-naphthyloctadecylphenacylsulfonium, 9-anthracenylmethylphenacylsulfonium; dimethylphenacylsulfonium, phenacyltetrahydrothiophenium, dimethyl Trialkylsulfonium such as benzylsulfonium, benzyltetrahydrothiophenium, octadecylmethylphenacylsulfonium and the like can be mentioned.

  Specific examples of iodonium include diphenyliodonium, di-p-tolyliodonium, bis (4-dodecylphenyl) iodonium, bis (4-methoxyphenyl) iodonium, (4-octyloxyphenyl) phenyliodonium, and bis (4-decyloxy). ) Phenyliodonium, 4- (2-hydroxytetradecyloxy) phenylphenyliodonium, 4-isopropylphenyl (p-tolyl) iodonium and 4-isobutylphenyl (p-tolyl) iodonium.

  The content of the component (C) is from 0.1 to 100 parts by mass of the component (A) from the viewpoint of further improving the sensitivity, resolution, pattern shape, and the like of the photosensitive resin composition of the present embodiment. It is preferably 20 parts by mass, more preferably 0.3 to 18 parts by mass, and still more preferably 1 to 15 parts by mass. In this specification, 100 parts by mass of the component (A) means that the solid content of the component (A) is 100 parts by mass.

((D) component)
The photosensitive resin composition of the present embodiment can contain a solvent as the component (D) in order to improve the handleability of the photosensitive resin composition or to adjust the viscosity and storage stability. . The component (D) is preferably an organic solvent. The type of the organic solvent is not particularly limited as long as it does not inhibit the reaction of the components (A) to (C).

  As the component (D), for example, ethylene glycol monoalkyl ether acetate such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, and propylene glycol monobutyl ether Propylene glycol monoalkyl ethers such as propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol dipropyl ether and propylene glycol dibutyl ether; propylene glycol monomethyl ether acetate; propylene glycol monoethyl ether Propylene glycol monoalkyl ether acetates such as tate, propylene glycol monopropyl ether acetate and propylene glycol monobutyl ether acetate; cellosolves such as ethyl cellosolve and butyl cellosolve; carbitols such as butyl carbitol; methyl lactate, ethyl lactate and n-propyl lactate; Lactic acid esters such as isopropyl lactate; fats such as ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, n-amyl acetate, isoamyl acetate, isopropyl propionate, n-butyl propionate and isobutyl propionate Aromatic carboxylic acid esters; methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate Esters such as methyl, methyl pyruvate and ethyl pyruvate; aromatic hydrocarbons such as toluene and xylene; ketones such as methyl ethyl ketone, 2-butanone, 2-heptanone, 3-heptanone, 4-heptanone and cyclohexanone; N, N-dimethyl Examples include amides such as formamide, N-methylacetamide, N, N-dimethylacetamide, and N-methylpyrrolidone; and lactones such as γ-butyrolactone. As the component (D), one type can be used alone, or two or more types can be used in combination.

  The content of the component (D) is preferably from 30 to 200 parts by mass, more preferably from 40 to 120 parts by mass, based on 100 parts by mass of the photosensitive resin composition excluding the component (D).

((E) component)
The photosensitive resin composition of the present embodiment may further contain a component (E): a compound having a methylol group or an alkoxyalkyl group. The component (E) is preferably a compound further having at least one selected from the group consisting of an aromatic ring, a heterocyclic ring and an alicyclic ring. Here, the aromatic ring means a hydrocarbon group having aromaticity (for example, a hydrocarbon group having 6 to 10 carbon atoms), and examples thereof include a benzene ring and a naphthalene ring. The heterocycle means a cyclic group having at least one hetero atom such as a nitrogen atom, an oxygen atom, and a sulfur atom (for example, a cyclic group having 3 to 10 carbon atoms), for example, a pyridine ring, an imidazole ring, Examples include a pyrrolidinone ring, an oxazolidinone ring, an imidazolidinone ring and a pyrimidinone ring. The alicycle means a cyclic hydrocarbon group having no aromaticity (for example, a cyclic hydrocarbon group having 3 to 10 carbon atoms), such as a cyclopropane ring, a cyclobutane ring, a cyclopentane ring and And a cyclohexane ring. An alkoxyalkyl group means a group in which an alkyl group is bonded to an alkyl group via an oxygen atom. The two alkyl groups may be different from each other, for example, an alkyl group having 1 to 10 carbon atoms.

  By containing the component (E), when the photosensitive layer after forming the resin pattern is heated and cured, the component (E) reacts with the component (A) to form a bridged structure, and the resin pattern becomes brittle. And deformation of the resin pattern can be prevented, and heat resistance can be improved. Further, specifically, a compound further having a phenolic hydroxyl group or a compound further having a hydroxymethylamino group can be preferably used, and the component (A) and the component (E) are not included.

  By including the component (C) in the photosensitive resin composition, an acid is generated by irradiation with actinic rays or the like. By the catalytic action of the generated acid, the alkoxyalkyl groups in the component (E) or the alkoxyalkyl groups in the component (E) and the component (A) can react with each other with dealcoholation. Further, by the catalytic action of the generated acid, the methylol groups in the component (E) or the methylol groups in the component (E) and the component (A) can react together with dealcoholation.

  The “compound further having a phenolic hydroxyl group” used as the component (E) has a methylol group or an alkoxyalkyl group, and thus can be used not only for the reaction with the component (E) or the component (A) but also for development with an aqueous alkali solution. Can increase the dissolution rate of the unexposed portion of the film, thereby improving the sensitivity. The molecular weight of the compound having a phenolic hydroxyl group is preferably from 94 to 2,000 in terms of weight average molecular weight, and preferably from 108 to 2,000, in consideration of improving the solubility in an aqueous alkali solution, photosensitivity, and mechanical properties in a well-balanced manner. Is more preferable, and it is still more preferable that it is 108-1500.

As the compound having a phenolic hydroxyl group, a conventionally known compound can be used. However, the compound represented by the following general formula (1) has an effect of promoting dissolution of an unexposed portion and a property at the time of curing of the photosensitive resin film. It is preferable because the effect of preventing melting is excellent in balance.

In the formula (1), Z represents a single bond or a divalent organic group, R ₂₄ and R ₂₅ each independently represent a hydrogen atom or a monovalent organic group, and R ₂₆ and R ₂₇ each independently represent a monovalent organic group. A and b each independently represent an integer of 1 to 3, and c and d each independently represent an integer of 0 to 3. Here, examples of the monovalent organic group include an alkyl group having 1 to 10 carbon atoms such as a methyl group, an ethyl group, and a propyl group; an alkenyl group having 2 to 10 carbon atoms such as a vinyl group. An aryl group having 6 to 30 carbon atoms such as a phenyl group; and a group in which some or all of the hydrogen atoms of these hydrocarbon groups are substituted with halogen atoms such as fluorine atoms.

The compound represented by the general formula (1) is preferably a compound represented by the following general formula (2).

In the formula (2), X ₁ represents a single bond or a divalent organic group, and R represents an alkyl group (for example, an alkyl group having 1 to 10 carbon atoms).

As the compound having a phenolic hydroxyl group, a compound represented by the following general formula (3) may be used.

  In the formula (3), R represents an alkyl group (for example, an alkyl group having 1 to 10 carbon atoms).

In the general formula (1), the compound in which Z is a single bond is a biphenol (dihydroxybiphenyl) derivative. Examples of the divalent organic group represented by Z include an alkylene group having 1 to 10 carbon atoms such as a methylene group, an ethylene group and a propylene group; and an alkylidene group having 2 to 10 carbon atoms such as an ethylidene group. An arylene group having 6 to 30 carbon atoms such as a phenylene group; a group in which some or all of the hydrogen atoms of these hydrocarbon groups have been substituted with halogen atoms such as a fluorine atom; a sulfonyl group; a carbonyl group; A sulfide bond; an amide bond and the like. Among them, Z is preferably a divalent organic group represented by the following general formula (4).

In the formula (4), X ₂ represents a single bond, an alkylene group (for example, an alkylene group having 1 to 10 carbon atoms), an alkylidene group (for example, an alkylidene group having 2 to 10 carbon atoms), or a hydrogen thereof. A group in which part or all of atoms are substituted with a halogen atom, a sulfonyl group, a carbonyl group, an ether bond, a sulfide bond, or an amide bond. R ₂₈ represents a hydrogen atom, a hydroxyl group, an alkyl group (for example, an alkyl group having 1 to 10 carbon atoms) or a haloalkyl group, and e represents an integer of 1 to 10. A plurality of R ₂₈ may be the same or different from each other. Here, the haloalkyl group means an alkyl group substituted with a halogen atom.

  Examples of the compound having a hydroxymethylamino group include (poly) (N-hydroxymethyl) melamine, (poly) (N-hydroxymethyl) glycoluril, (poly) (N-hydroxymethyl) benzoguanamine, and (poly) (N- (Hydroxymethyl) urea and the like. Further, a nitrogen-containing compound in which all or a part of the hydroxymethylamino group of these compounds is alkyl-etherified may be used. Here, the alkyl group of the alkyl ether includes a methyl group, an ethyl group, a butyl group or a mixture thereof, and may contain an oligomer component which is partially self-condensed. Specific examples include hexakis (methoxymethyl) melamine, hexakis (butoxymethyl) melamine, tetrakis (methoxymethyl) glycoluril, tetrakis (butoxymethyl) glycoluril, and tetrakis (methoxymethyl) urea.

Specifically, the compound having a hydroxymethylamino group is preferably a compound represented by the following general formula (5) or a compound represented by the following general formula (6).

  In the formulas (5) and (6), R independently represents an alkyl group (for example, an alkyl group having 1 to 10 carbon atoms).

  The content of the component (E) is preferably 5 to 60 parts by mass, more preferably 10 to 45 parts by mass, and more preferably 10 to 35 parts by mass with respect to 100 parts by mass of the component (A). Is more preferred. When the content of the component (E) is 5 parts by mass or more, chemical resistance and heat resistance tend to be good. When the content is 60 parts by mass or less, the photosensitive resin composition is formed on a desired support. The film tends to be easily formed.

((F) component)
The photosensitive resin composition of the present embodiment may further contain a sensitizer as the component (F). By containing the component (F), the photosensitivity of the photosensitive resin composition can be improved. As the component (F), a naphthalene sensitizer or an anthracene sensitizer may be used. Examples of the anthracene-based sensitizer include 9,10-dibutoxyanthracene. The component (F) may be used alone or as a mixture of two or more.

  The content of the component (F) is preferably from 0.01 to 1.5 parts by mass, more preferably from 0.05 to 0.5 parts by mass, per 100 parts by mass of the component (A). .

((G) component)
The photosensitive resin composition of this embodiment may further contain a compound having a Si—O bond as the component (G). The component (G) is not particularly limited as long as it has a Si—O bond. For example, among the inorganic filler and the silane compound, a compound having a Si—O bond and an alkoxy oligomer having a Si—O bond Is mentioned. As the component (G), one type can be used alone, or two or more types can be used in combination.

  When an inorganic filler is used as the component (G), the inorganic filler is preferably silica such as fused spherical silica, fused ground silica, fumed silica, and sol-gel silica. Further, by treating the inorganic filler with a silane compound, the inorganic filler may have a Si—O bond. Among the inorganic fillers treated with the silane compound, as inorganic fillers other than silica, aluminum oxide, aluminum hydroxide, calcium carbonate, calcium hydroxide, barium sulfate, barium carbonate, magnesium oxide, magnesium hydroxide, or talc, Examples include inorganic fillers derived from mineral products such as mica.

  When a silane compound is used as the component (G), the silane compound is not particularly limited as long as the silane compound has a Si—O bond. Examples of the silane compound include alkyl silane, alkoxy silane, vinyl silane, epoxy silane, amino silane, acryl silane, methacryl silane, mercapto silane, sulfide silane, isocyanate silane, sulfur silane, styryl silane and alkyl chlorosilane.

As the silane compound as the component (G), a compound represented by the following general formula (14) is preferable.
_{^{(R 101 O) 4-f}} -Si- (R 102) f ... (14)

In the formula (14), R ¹⁰¹ represents an alkyl group having 1 to 10 carbon atoms such as a methyl group, an ethyl group, and a propyl group; R ¹⁰² represents a monovalent organic group; Indicates an integer of 3. When f is 0, 1, or 2, a plurality of R ¹⁰¹ may be the same or different from each other. When f is 2 or 3, a plurality of R ¹⁰² may be the same or different from each other. R ¹⁰¹ is preferably an alkyl group having 1 to 5 carbon atoms, and more preferably an alkyl group having 1 to 2 carbon atoms, from the viewpoint of more excellent resolution. When treating with a compound represented by the general formula (14) to improve the dispersibility of the inorganic filler, f is preferably from 0 to 2 and more preferably from 0 to 1 from the viewpoint of further improving the dispersibility of the inorganic filler. Is more preferred.

  Examples of the silane compound include methyltrimethoxysilane, dimethyldimethoxysilane, trimethylmethoxysilane, methyltriethoxysilane, methyltriphenoxysilane, ethyltrimethoxysilane, n-propyltrimethoxysilane, diisopropyldimethoxysilane, and isobutyltrimethoxysilane. , Diisobutyldimethoxysilane, isobutyltriethoxysilane, n-hexyltrimethoxysilane, n-hexyltriethoxysilane, cyclohexylmethyldimethoxysilane, n-octyltriethoxysilane, n-dodecyltrimethoxysilane, phenyltrimethoxysilane, diphenyldimethoxy Silane, tetraethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3- 2-aminoethyl) aminopropyltrimethoxysilane, 3- (2-aminoethyl) aminopropylmethyldimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyl Methyldimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, bis (3- (triethoxysilyl) propyl) disulfide, bis (3- (triethoxysilyl) propyl) tetra Sulfide, vinyltriacetoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltriisopropoxysilane, allyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxyp Pyrmethyldimethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltriethoxysilane and N- (1,3-dimethylbutylidene)- 3-aminopropyltriethoxysilane is exemplified.

  The content of the component (G) is preferably from 0.5 to 10 parts by mass, more preferably from 1 to 5 parts by mass, per 100 parts by mass of the component (A).

  In the photosensitive resin composition of the present embodiment, if desired, additives that are miscible, for example, an additional resin for improving the performance of the resist pattern, a plasticizer, a stabilizer, a coloring agent, a coupling agent, A conventionally known agent such as a leveling agent can be appropriately contained.

[Photosensitive film]
The photosensitive film of the present embodiment includes a support, and a photosensitive layer provided on the support and formed from the above-described photosensitive resin composition. A protective layer for covering the photosensitive layer may be further provided on the photosensitive layer.

  As the support, a polymer film having heat resistance and solvent resistance can be used. Examples of the polymer film include a polyester film containing polyethylene terephthalate and the like, and a polyolefin film containing polypropylene, polyethylene and the like. The thickness of the support is preferably 5 to 25 μm. The polymer film may be used by laminating it on both sides of the photosensitive layer so as to sandwich the photosensitive layer, using one as a support and the other as a protective film.

  As the protective layer, a polymer film having heat resistance and solvent resistance can be used. Examples of the polymer film include a polyester film containing polyethylene terephthalate and the like, and a polyolefin film containing polypropylene, polyethylene and the like.

  The photosensitive layer can be formed by applying the photosensitive resin composition of the present embodiment on a support or a protective layer. Examples of the coating method include a dipping method, a spray method, a bar coating method, a roll coating method, and a spin coating method. Although the thickness of the photosensitive layer varies depending on the use, it is preferably 10 to 100 μm, more preferably 15 to 60 μm, and particularly preferably 20 to 50 μm after drying the photosensitive layer.

[Method of forming resist pattern]
The method for forming a resist pattern of the embodiment includes a step of applying the above-described photosensitive resin composition on a substrate, drying the applied photosensitive resin composition to form a photosensitive layer, and forming the photosensitive layer in a predetermined manner. The method may include a step of performing a heat treatment after exposure to the pattern, a step of developing the photosensitive layer after the heat treatment to obtain a resin pattern, and a step of performing a heat treatment on the resin pattern. Further, the method of forming a resist pattern of the embodiment includes a step of disposing the photosensitive layer of the photosensitive film on the substrate, a step of exposing the photosensitive layer to a predetermined pattern, a step of heat treatment, and a step of heat treatment. The method may include a step of developing a photosensitive layer to obtain a resin pattern, and a step of heating the resin pattern.

  In the method for forming a resist pattern according to the present embodiment, for example, first, a photosensitive layer containing the above-described photosensitive resin composition is formed on a substrate on which a resist pattern is to be formed. As a method for forming the photosensitive layer, a method in which a photosensitive resin composition is applied to a substrate (for example, coating), dried, and a solvent or the like is volatilized to form a photosensitive layer (coating); A method of transferring (laminating) the photosensitive layer of the element onto the substrate is exemplified.

  Examples of the substrate include a substrate and the like. As the base material, for example, a copper foil with resin, a copper-clad laminate, a silicon wafer with a metal sputtered film, a silicon wafer with a copper plating film, an alumina substrate, and the like can be used. The surface of the substrate on which the photosensitive layer is formed may be a cured resin layer formed using a photosensitive resin composition. In that case, there is a tendency that the adhesion to the substrate is improved.

  As a method of applying the photosensitive resin composition to a substrate, for example, an application method such as a dipping method, a spray method, a bar coating method, a roll coating method, and a spin coating method can be used. The thickness of the photosensitive layer can be appropriately controlled by adjusting the application means and the solid content concentration and viscosity of the photosensitive resin composition.

Next, the photosensitive layer is exposed to a predetermined pattern through a predetermined mask pattern. The actinic rays used for the exposure include, for example, rays of a g-ray stepper; ultraviolet rays such as a low-pressure mercury lamp, a high-pressure mercury lamp, a metal halide lamp, and an i-ray stepper; an electron beam; The exposure amount is appropriately selected depending on the light source used, the thickness of the photosensitive layer, and the like. For example, in the case of ultraviolet irradiation from a high-pressure mercury lamp, when the photosensitive layer has a thickness of 10 to 50 μm, the exposure amount is about 100 to 5000 mJ / cm ² .

  Further, a heat treatment (post-exposure bake) is performed after the exposure. By performing post-exposure baking, the curing reaction of the component (A) by the acid generated from the component (C) can be promoted. The conditions of the post-exposure bake vary depending on the composition of the photosensitive resin composition, the content of each component, the thickness of the photosensitive layer, and the like, but it is usually preferable to heat at 70 to 150 ° C for 1 to 60 minutes, More preferably for 1 to 60 minutes.

  Next, the exposed and / or post-exposure-baked photosensitive layer is developed with a developer to dissolve and remove the unexposed area (area other than the cured area) to obtain a desired resin pattern. Examples of the developing method in this case include a shower developing method, a spray developing method, an immersion developing method, and a paddle developing method. The development conditions are usually 20 to 40 ° C. for 1 to 10 minutes.

  Examples of the developer include an organic solvent and an aqueous alkaline solution. Examples of the organic solvent include N-methylpyrrolidone, ethanol, cyclohexanone, cyclopentanone, and propylene glycol methyl ether acetate. Examples of the alkaline aqueous solution include an aqueous solution containing sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, tetramethylammonium hydroxide, and the like. Among these, propylene glycol methyl ether acetate is preferred as the developer from the viewpoint of the development speed.

  After development, it is preferable to rinse with water, an alcohol such as methanol, ethanol, or isopropyl alcohol, n-butyl acetate, propylene glycol monomethyl ether acetate, diethylene glycol dimethyl ether acetate, or the like, if necessary.

  Furthermore, a heat treatment is performed to develop the properties of the insulating film, whereby a cured film (resist pattern) of the photosensitive resin composition is obtained. Although the conditions of the heat treatment are not particularly limited, the photosensitive resin composition can be cured by heating at 50 to 250 ° C. for 30 minutes to 10 hours, depending on the use of the cured product.

  In addition, heating can be performed in two stages in order to allow the curing to proceed sufficiently or to prevent deformation of the obtained resin pattern shape. For example, in the first step, heating may be performed at 50 to 120 ° C. for 5 minutes to 2 hours, and in the second step, heating may be performed at 80 to 200 ° C. for 10 minutes to 10 hours for curing. The heating equipment is not particularly limited, and a general oven, an infrared furnace, or the like can be used.

[Method of forming hollow structure]
The method for forming a resist pattern according to the present embodiment is suitable as a method for forming a rib pattern for forming a hollow structure.

  In the method for forming a hollow structure according to the present embodiment, a rib pattern is provided to form a hollow structure, and the above-described photosensitive film is laminated on the rib pattern so as to form a lid of the hollow structure. A photo-curing step of irradiating a predetermined portion of the photosensitive layer with actinic rays and photo-curing the exposed portion; and a thermo-curing process of thermally curing the exposed portion of the photosensitive layer to form a cured product.

  The photosensitive film can be used not only as a material for forming the above-described rib having the hollow structure but also as a material for forming the lid. When a photosensitive film is used as a lid, it is not always necessary to go through a development step between the exposure step and the thermosetting step.

  However, when it is desired to control the shape of the lid, when simultaneously manufacturing a plurality of hollow structure devices simultaneously, and after exposing only the size corresponding to the lid of the individual hollow device through the mask, the surrounding unexposed portion In the case of dividing into individual pieces by developing, for example, in the exposure step, after passing through an exposure step of irradiating active light through a mask to light-harden the exposed part, portions other than the exposed part of the photosensitive layer are exposed. It is preferable to go through a developing step of removing using the above-mentioned developer.

  The thickness of the photosensitive layer used to form the lid is preferably 5 to 500 μm, more preferably 10 to 400 μm. The final thickness of the lid formed through the curing step (the total thickness of the photosensitive layer, the film serving as the substrate or the thickness of the thin plate) is preferably 10 μm to 3 mm, more preferably 20 μm to 2 mm. When the photosensitive resin composition of the present embodiment is used, the shape can be maintained even when the thickness of the lid portion is 10 μm, and deformation under high temperature and high pressure conditions during molding can be suppressed. On the other hand, if the thickness of the lid portion is 3 mm or less, a problem that may occur in manufacturing because the hollow structure device is too thick and the light transmittance at the time of exposure is reduced can be avoided.

  The thickness of the lid can be adjusted to a desired thickness by leaving the support as the lid as well as the thickness of the photosensitive layer.

  The lid and the rib pattern can be bonded to each other by, for example, bonding by thermocompression using a press, a roll laminator, or a vacuum laminator. The rib pattern can be formed without using the photosensitive resin composition of the present embodiment, and only the lid can be formed using the photosensitive resin composition of the present embodiment. It is preferable that both use the photosensitive resin composition of the present embodiment because the adhesiveness therebetween is excellent. When the provided rib pattern has a sufficient thickness, a hollow structure can be formed by laminating a ceramic substrate, a Si substrate, a glass substrate, a metal substrate, or the like as a lid.

  As described above, according to the method for forming a hollow structure according to the present embodiment, a thick-film rib pattern can be formed at once by photolithography, and a cured product of a photosensitive resin composition formed in a film shape from above the rib pattern (Or a sealing substrate such as ceramic) as a lid, whereby a hollow structure can be formed.

  In addition, since the inside of the space of this hollow structure is moisture-proof by the surrounding photosensitive resin composition and the hollow portion is maintained even at a high temperature, a hollow structure such as a SAW filter, a CMOS / CCD sensor, and a MEMS is required. The present invention is applicable to electronic components, and is useful for reducing the size, height, and functionality of electronic components. The photosensitive resin composition of the present embodiment is particularly suitable as a material for forming a rib portion and a lid portion of a hollow structure of a SAW filter, and is particularly suitable as a material for forming a lid portion in that high reliability can be achieved. I have.

  As described above, the photosensitive resin composition of the present embodiment is suitable as a material for forming a rib and / or a lid for a hollow structure device. In addition, by applying the photosensitive film of the present embodiment to the method of forming the rib pattern and the method of forming the hollow structure, a low-cost and highly reliable hollow structure electronic component, specifically, a SAW filter is manufactured. can do. The photosensitive resin composition of the present embodiment can be applied as a material used for a surface protective film or an interlayer insulating film of a semiconductor element. Further, it can be applied as a material used for a solder resist of a wiring board material or an interlayer insulating film. In particular, since the photosensitive resin composition of the present embodiment has good resolution and insulation reliability between the fine wirings after curing, both the thinned and high-density highly integrated package substrate and the like are used. It is preferably used.

  Hereinafter, examples of the present invention will be described, but the present invention is not limited to these examples.

(Synthesis example 1)
After adding 500 mL of ultra-dehydrated diethyl ether and 30 g (121.46 mmol) of super-dehydrated diethyl ether to a 125 mL four-necked flask sufficiently dried under a nitrogen atmosphere, the solution is cooled to −78 ° C. using a dry ice / acetone bath. did. Then, 47.4 mL of a 2.5 mol / L n-butyllithium hexane solution was dropped into the flask over 10 minutes, and the mixture was stirred at -78 ° C for 30 minutes. To this, 49.3 mL of a 0.6 mol / L gallium (III) chloride diethyl ether solution was added dropwise over 10 minutes, and the reaction was carried out with stirring at -78 ° C for 3 hours. The reaction solution was stirred while gradually returning to room temperature, and stirred at room temperature for 5 hours. The reaction solution was filtered to remove precipitates, and then concentrated under reduced pressure to obtain an off-white product. The product was washed four times with 30 mL of ultra-dehydrated hexane, and then dried in vacuo overnight to obtain lithium tetrakis (pentafluorophenyl) gallate.

(Synthesis example 2)
25 mL of dichloromethane, 1.69 g (5 mmol) of 4-isopropylphenyl (p-tolyl) iodonium chloride and 4.4 g (6 mmol) of lithium tetrakis (pentafluorophenyl) gallate are added to a 50 mL eggplant flask, and the mixture is stirred at room temperature for 2 hours. The reaction was carried out. The reaction solution was filtered to remove the precipitate, and then concentrated under reduced pressure to obtain 4-isopropylphenyl (p-tolyl) iodonium tetrakis (pentafluorophenyl) gallate (C-3).

(Synthesis example 3)
1.6 g (8 mmol) of diphenyl sulfoxide, 1.5 g (8 mmol) of diphenyl sulfide, 2.5 g (24 mmol) of acetic anhydride, 1.5 g (10 mmol) of trifluoromethanesulfonic acid and 13 g of acetonitrile are uniformly mixed, and the mixture is mixed at 40 ° C. for 6 hours. Reacted. The reaction solution was cooled to room temperature, poured into 60 g of distilled water, extracted with 60 g of dichloromethane, and washed with water until the pH of the aqueous layer became neutral. The dichloromethane layer was concentrated under reduced pressure to obtain a brown liquid product. The product was added with 20 g of ethyl acetate, dissolved in a water bath at 60 ° C., stirred with 60 g of hexane, cooled to 5 ° C., allowed to stand for 30 minutes, and then subjected to twice the operation of removing the supernatant. Washed. The solution containing the product after washing was concentrated under reduced pressure to obtain diphenyl [4- (phenylthio) phenyl] sulfonium triflate. This triflate was dissolved in 50 g of dichloromethane, mixed with 66 g of an aqueous solution containing equimolar lithium tetrakis (pentafluorophenyl) gallate, and reacted at room temperature for 3 hours. The dichloromethane layer of the reaction solution was washed twice with water and then concentrated under reduced pressure to obtain diphenyl [4- (phenylthio) phenyl] sulfonium tetrakis (pentafluorophenyl) gallate (C-4).

[Photosensitive resin composition]
The components described in Tables 1 and 2 were blended (units are parts by mass) to prepare photosensitive resin compositions of Examples and Comparative Examples, respectively.

Abbreviations of each component in Tables 1 and 2 are as follows.
(A-1): Cresol novolak resin (trade name of Asahi Organic Materials Co., Ltd .; TR4020G)
(A-2): p-hydroxystyrene-styrene copolymer (trade name of Maruzen Petrochemical Co., Ltd .: Marcalinker CST-70, Mw: 10000)
(B-1): Trimethylolpropane triglycidyl ether (trade name of Nagase ChemteX Corporation: EX-321L)
(B-2): polyfunctional bisphenol novolak type epoxy resin (trade name of Mitsubishi Chemical Corporation: jER157S70)
(C-1): Triarylsulfonium tetrakis (pentafluorophenyl) borate (trade name of San Apro Corporation: CPI-110B)
(C-2): Triarylsulfonium tetrakis (pentafluorophenyl) borate (trade name of San Apro Corporation: CPI-310B)
(C-3): Onium gallate salt of Synthesis Example 2 (C-4): Onium gallate salt of Synthesis Example 3 (C-5): Triarylsulfonium hexafluoroantimonate (trade name of San Apro Corporation: CPI-310A) )
(C-6): Triarylsulfonium hexafluoroantimonate (trade name of San Apro Corporation: CPI-101A)
(C-7): Triarylsulfonium hexafluorophosphate (trade name of San Apro Corporation: CPI-310P)
(D-1): Methyl ethyl ketone (trade name of Fuji Film Wako Pure Chemical Industries, Ltd .: 2-butanone)
(E-1): Polyfunctional methylol compound (trade name of Honshu Chemical Industry Co., Ltd .: HMOM-TPPA)
(F-1): 9,10-dibutoxyanthracene (trade name of Kawasaki Kasei Kogyo Co., Ltd .: DBA)
(G-1): 3-glycidoxypropyltrimethoxysilane (trade name of Shin-Etsu Chemical Co., Ltd .: KBM-403)

[Preparation of photosensitive film]
A 50 μm-thick polyethylene terephthalate film (trade name of Teijin Limited: A-4100) was prepared as a support. The photosensitive resin composition of the example or the comparative example was uniformly applied on the support so that the thickness after drying was 30 μm. Next, the photosensitive layer was formed by heating and drying at 100 ° C. for 15 minutes using a hot air convection dryer to prepare a photosensitive film having a support and a photosensitive layer.

[Evaluation]
(Pattern formation)
A photosensitive film was laminated on a 6-inch silicon wafer in such a manner that the photosensitive layer was positioned on the silicon wafer side to obtain a laminate including a 30 μm photosensitive layer and a support. Lamination was performed at 60 ° C. using a laminator. On the support of the laminate, a mask for resolution evaluation (a mask having a pattern in which the width of the exposed part and the unexposed part is 1: 1 from 10 μm: 10 μm to 100 μm: 100 μm in increments of 10 μm was used) Is further placed, and an i-line filter (trade name: HB-0365 of Asahi Spectroscopy Co., Ltd.) is placed thereon, and 250, 500, 750, 1000 mJ / cm ² using a high-precision parallel exposure machine (Mikasa Corporation). Exposure. The exposed sample was heated on a hot plate at 85 ° C. for 4 minutes after exposure.

After removing the support, the developing layer (trade name: AD-1200 of Takizawa Sangyo Co., Ltd .: AD-1200) was used for developing the photosensitive layer with a developing solution (propylene glycol methyl ether acetate) for 60 seconds and 30 seconds. The unexposed portion was removed to obtain a resin pattern. The resin pattern after development was dried at room temperature for 30 minutes to obtain a sample for evaluation. By observing the sample using a metallographic microscope, the pattern formability (resolution) was evaluated. The evaluation was performed according to the following criteria. Here, "formable" means that the unexposed portion is cleanly removed and the line portion (exposed portion) has no defect such as falling. Table 3 shows the evaluation results.
A: A pattern with a line width of 40 μm or less could be formed.
B: A pattern having a line width of 80 μm or less could be formed.
C: The photosensitive layer peeled off after development.

(Adhesion)
A photosensitive film prepared from the photosensitive resin composition of Comparative Example 1 was laminated on a 6-inch silicon wafer in such a manner that the photosensitive layer was positioned on the 6-inch silicon wafer side, and a 30 μm photosensitive layer and a support were formed. Was obtained. Lamination was performed at 60 ° C. using a laminator. Next, an i-line filter was arranged on the support, and the entire surface of the photosensitive layer was exposed to 1000 mJ / cm ² using a high-precision parallel exposure machine. After exposure, the laminated body was exposed to heat on a hot plate at 85 ° C. for 4 minutes and then exposed, then the support was removed, and the resin was cured by heating at 200 ° C. for 60 minutes using a hot air convection dryer. A membrane was obtained.

On the cured resin film, a photosensitive film prepared from the photosensitive resin composition of the example or the comparative example is laminated in a direction where the photosensitive layer is positioned on the cured resin film, and a laminate including a 30 μm photosensitive layer and a support is provided. I got a body. Lamination was performed at 60 ° C. using a laminator. An adhesion evaluation mask (100 μm square pattern) was placed on the support of the laminate, and an i-line filter was further placed thereon, followed by exposure to 1000 mJ / cm ² using a high-precision parallel exposure machine. The laminated body after the exposure was heated on a hot plate at 85 ° C. for 4 minutes after the exposure. Thereafter, the support was removed, and the photosensitive layer was padded with a developing solution (propylene glycol methyl ether acetate) using a developing machine (trade name: AD-1200 of Takizawa Sangyo Co., Ltd.) for 60 seconds and 30 seconds. Development was performed, and an unexposed portion was removed to obtain a resin pattern. The resin pattern after development was dried at room temperature for 30 minutes, and heated at 200 ° C. for 60 minutes with a hot air convection dryer to obtain a sample for evaluation. The shear strength of the 100 μm square pattern portion was measured using a bond tester (trade name: Dage-4000 of Nordson Advanced Technology Co., Ltd.), and the adhesion strength was calculated.

(HAST resistance)
The copper surface of a printed wiring board substrate (trade name: MCL E-679, manufactured by Hitachi Chemical Co., Ltd.) having a structure in which a copper foil having a thickness of 12 μm is laminated on a glass epoxy base material is etched to have a line / space of 50 μm / 50 μm. A comb electrode was formed. This substrate was used as an evaluation substrate, and a cured product of a photosensitive layer was formed on the substrate using a photosensitive film in the same manner as described above (evaluation of resolution). Thereafter, the test was performed at 130 ° C., 85% RH and 3.3 V for 100 hours. The copper wiring after the test was observed, and the HAST resistance was evaluated. The case where corrosion of the copper wiring was not observed before and after the test was determined as “A”, and the case where corrosion of the copper wiring was observed was determined as “B”.

  From Table 3, it can be confirmed that in Examples 1 to 11, all of the pattern formability, adhesion strength, and HAST resistance are good as compared with Comparative Examples 1 to 6, and the insulation reliability between fine wirings is excellent. Was.

Claims (9)

(A) component: a novolak resin having a phenolic hydroxyl group,
(B) component: a compound having two or more oxirane rings,
(C) component: a photosensitive acid generator containing at least one onium salt selected from the group consisting of onium borate salts and onium gallate salts;
(D) component: contains a solvent,
The photosensitive resin composition, wherein the content of the component (B) is 40 to 300 parts by mass with respect to 100 parts by mass of the component (A).   The photosensitive resin composition according to claim 1, wherein the onium salt contains at least one cation selected from the group consisting of iodonium and sulfonium.   The photosensitive resin composition according to claim 1, wherein the component (B) includes a compound having three or more glycidyl ether groups.   The photosensitive resin composition according to any one of claims 1 to 3, further comprising (E) a component: a compound having a methylol group or an alkoxyalkyl group.   A photosensitive film comprising: a support; and a photosensitive layer formed from the photosensitive resin composition according to claim 1 provided on the support.   A cured product of the photosensitive resin composition according to claim 1.   A device comprising a cured product of the photosensitive resin composition according to claim 6. A step of applying the photosensitive resin composition according to any one of claims 1 to 4 on a substrate, and drying the applied photosensitive resin composition to form a photosensitive layer,
After exposing the photosensitive layer to a predetermined pattern, a step of heat treatment,
Developing the photosensitive layer after the heat treatment to obtain a resin pattern,
Heat-treating the resin pattern,
A method for forming a resist pattern, comprising: Disposing a photosensitive layer of the photosensitive film according to claim 5 on a substrate;
After exposing the photosensitive layer to a predetermined pattern, a step of heat treatment,
Developing the photosensitive layer after the heat treatment to obtain a resin pattern,
Heat-treating the resin pattern,
A method for forming a resist pattern, comprising: