JP2018084683A - Photosensitive resin composition, photosensitive element, cured product, semiconductor device and method for forming resist pattern - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a photosensitive resin composition that has excellent resolution.SOLUTION: A photosensitive resin composition contains (A) component: a resin having a phenolic hydroxyl group, (B) component: a photosensitive acid generator, and (C) component: an aliphatic compound having at least one selected from the group consisting of a methylol group and an alkoxyalkyl group, the number of the groups being at least two.SELECTED DRAWING: None

Description

  The present invention relates to a photosensitive resin composition, a photosensitive element, a cured product, a semiconductor device, and a method for forming a resist pattern.

  Photosensitive resin compositions are currently widely used in various semiconductor and microfabrication applications. In such a use, after exposing the photosensitive resin composition on a board | substrate with actinic rays, an exposed part or an unexposed part is selectively removed by processing with a suitable developing solution, and a resist pattern is formed. During this treatment, photoprocessing is achieved by inducing a change in solubility of the photosensitive resin composition. The photosensitive resin composition can be either a positive type or a negative type, and exposure using actinic rays is performed in order to increase or decrease the solubility in a developer depending on the application.

  Conventionally, materials combining acrylic photocuring agents and epoxy thermosetting agents have been used as these material systems. For example, Patent Documents 1 and 2 listed below disclose a photosensitive resin composition containing a novolak resin, an epoxy resin, and a photoacid generator, and Patent Document 3 listed below discloses an alkali-soluble epoxy compound having a carboxyl group. And a photosensitive resin composition containing a cationic photopolymerization initiator. Patent Document 4 below describes a photosensitive resin composition relating to a semiconductor surface protective film or interlayer insulating film.

JP 09-087366 A Special Table 2007-522531 International Publication No. 2008/010521 JP 2003-215802 A

  By the way, with the increase in the speed of electronic devices, for example, the density of wiring board materials is increasing year by year. Along with this, there is an increasing demand for fine processing of solder resists and interlayer insulating films used for wiring boards. Therefore, the photosensitive resin composition is required to be excellent in photosensitivity, heat resistance, electrical characteristics, mechanical characteristics, and the like. However, it has been difficult to achieve high resolution with the photosensitive resin composition described in the above prior art document.

  An object of this invention is to provide the photosensitive resin composition which solves the trouble accompanying the above prior arts, and is excellent in resolution. Moreover, an object of this invention is to provide the photosensitive element obtained by using the said photosensitive resin composition, hardened | cured material, and a semiconductor device. Furthermore, an object of this invention is to provide the formation method of the resist pattern using the said photosensitive resin composition or the said photosensitive element.

  As a result of intensive studies to solve the above problems, the present inventors have found a photosensitive resin composition having excellent characteristics.

  That is, the photosensitive resin composition of the present invention comprises (A) component: a resin having a phenolic hydroxyl group, (B) component: a photosensitive acid generator, and (C) component: a methylol group and an alkoxyalkyl group. And an aliphatic compound having at least one selected from the group consisting of two or more.

  The photosensitive resin composition of the present invention is excellent in resolution. According to such a photosensitive resin composition, a resist pattern having excellent resolution can be formed. Moreover, according to the photosensitive resin composition of this invention, the hardened | cured material excellent in heat resistance can be obtained.

  By forming the interlayer insulating film thickly, the insulation between the wirings in the thickness direction of the layers can be improved and the wiring can be prevented from being short-circuited, so that the reliability regarding the insulation between the wirings is improved. Further, when a chip is mounted, since the semiconductor device has a thick interlayer insulating film, stress applied to the pads of the solder bumps can be relieved, so that connection failure hardly occurs during mounting. Therefore, from the viewpoint of insulation reliability and productivity when mounting a chip, it is required that a photosensitive layer (photosensitive resin composition layer) having a thickness of 10 μm or more can be formed. Applications involving the fabrication of typical electronic packages require a photosensitive resin composition capable of forming a resist pattern with a high aspect ratio (defined as “image height / image width formed”). . On the other hand, according to the photosensitive resin composition of the present invention, it is possible to obtain a photosensitive layer (photosensitive resin composition layer) having a thickness of 10 μm or more with excellent resolution, and a high aspect ratio resist pattern. Can be formed.

  In addition, as the wiring pitch is narrowed, improvement in HAST (High Accelerated Stress Test and Humidity Stress Test) resistance is also strongly demanded. However, the photosensitive resin composition described in the above prior art document has room for improvement in HAST resistance. In particular, the importance of insulation reliability between fine wirings is increasing, and the test temperature is higher than the conventional test in which voltage is applied at 85 ° C., 60% RH, or 85 ° C., 85% RH. Therefore, resistance (HAST resistance) in a HAST test (for example, 130 ° C., 85% RH) which is high and has severe conditions is demanded. On the other hand, according to the photosensitive resin composition of the present invention, a cured product excellent in HAST resistance can be obtained even under such severe conditions.

  The component (C) may have at least one selected from the group consisting of an alicyclic ring and a heterocyclic ring.

  It is preferable that content of (C) component is 25-95 mass parts with respect to 100 mass parts of (A) component.

  The photosensitive resin composition of the present invention may further contain a solvent.

  The photosensitive element which concerns on this invention is equipped with the support body and the photosensitive layer provided on the said support body, and the said photosensitive layer contains the said photosensitive resin composition.

  The cured product according to the present invention is a cured product of the photosensitive resin composition. The cured product of the present invention can be suitably used as an insulating film (surface protective film, solder resist, interlayer insulating film, etc.).

  The semiconductor device according to the present invention includes the cured product.

  1st Embodiment of the formation method of the resist pattern of this invention is the process of forming the photosensitive layer containing the said photosensitive resin composition on a base material, the exposure process of exposing the said photosensitive layer to a predetermined pattern, A development step of developing the photosensitive layer after the exposure step to obtain a resin pattern, and a heat treatment step of heat-treating the resin pattern are provided.

  In a second embodiment of the method for forming a resist pattern of the present invention, a step of arranging the photosensitive layer of the photosensitive element on a substrate, an exposure step of exposing the photosensitive layer to a predetermined pattern, and the exposure step Thereafter, a development step of developing the photosensitive layer to obtain a resin pattern and a heat treatment step of heat-treating the resin pattern are provided.

  In the resist pattern forming method of the present invention, the photosensitive layer is subjected to a heat treatment (post-exposure heat treatment; hereinafter, this heat treatment is also referred to as “post-exposure baking”) between the exposure step and the development step. You may further provide the process.

  According to the present invention, a photosensitive resin composition excellent in resolution can be provided. Moreover, according to this invention, the photosensitive element obtained by using the said photosensitive resin composition, hardened | cured material, and a semiconductor device can be provided. Furthermore, according to this invention, the formation method of the resist pattern using the said photosensitive resin composition or the said photosensitive element can be provided.

It is a schematic diagram which shows one Embodiment of the manufacturing method of the multilayer printed wiring board of this invention.

  Hereinafter, although one embodiment of the present invention is described concretely, the present invention is not limited to this.

  In this specification, the terms “layer” and “film” refer to a structure formed in part in addition to a structure formed over the entire surface when observed as a plan view. Is included. The term “process” is not limited to an independent process, and is included in the term if the intended purpose of the process is achieved even if it cannot be clearly distinguished from other processes. The numerical range indicated by using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively.

<Photosensitive resin composition>
The photosensitive resin composition of the present embodiment comprises (A) component: a resin having a phenolic hydroxyl group, (B) component: a photosensitive acid generator, and (C) component: a methylol group and an alkoxyalkyl group. And an aliphatic compound having two or more of at least one selected from the group. Moreover, the photosensitive resin composition of this embodiment is an aromatic compound having at least one selected from the group consisting of (D) component: solvent, (E) component: methylol group and alkoxyalkyl group, if necessary. (F) component: You may contain a sensitizer etc.

  The photosensitive resin composition of this embodiment is excellent in resolution. Moreover, according to the photosensitive resin composition of this embodiment, the hardened | cured material excellent in HAST tolerance and heat resistance can be obtained.

  The present inventors consider the reason why the photosensitive resin composition of the present embodiment is excellent in resolution and heat resistance as follows. First, in the unexposed area, the solubility of the component (A) (resin having a phenolic hydroxyl group) in the developer is greatly improved by the addition of the component (C). Next, in the exposed portion, by the catalytic action of the acid generated from the component (B) (photosensitive acid generator), the methylol groups in the component (C) or the alkoxyalkyl groups, or in the component (C) When the methylol group or alkoxyalkyl group of (A) reacts with the component (A) with dealcoholization to form a crosslinked structure, the solubility of the composition in the developer is greatly reduced. Thus, the inventors speculate that the difference in solubility between the unexposed area and the exposed area in the developer becomes significant, and that sufficient resolution is obtained when developed. In addition, when the heat treatment after the exposure causes the reaction between the components (C) and the reaction between the components (C) and (A) to further proceed and sufficient heat resistance is obtained, the present inventors I guess.

((A) component)
Although it does not specifically limit as (A) component (resin which has a phenolic hydroxyl group), It is preferable that it is resin soluble in alkaline aqueous solution, and a novolak resin is more preferable from a viewpoint of further improving resolution. The novolak resin can be obtained, for example, by condensing phenols and aldehydes in the presence of a catalyst.

  Examples of the phenols include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, m-ethylphenol, p-ethylphenol, o-butylphenol, m-butylphenol, p-butylphenol, 2, 3 -Xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol Catechol, resorcinol, pyrogallol, α-naphthol, β-naphthol and the like. Phenols can be used alone or in combination of two or more.

  Examples of the aldehydes include formaldehyde, paraformaldehyde, acetaldehyde, and benzaldehyde. Aldehydes can be used singly or in combination of two or more.

  Specific examples of the novolak resin include phenol / formaldehyde condensed novolak resin, cresol / formaldehyde condensed novolak resin (cresol novolak resin), phenol-naphthol / formaldehyde condensed novolak resin, and the like.

  As the component (A) other than the novolak resin, a homopolymer or copolymer of hydroxystyrene (hydroxystyrene-styrene copolymer, hydroxystyrene-methyl (meth) acrylic acid copolymer, etc.), phenol-xylylene glycol Examples thereof include condensation resins, cresol-xylylene glycol condensation resins, and phenol-dicyclopentadiene condensation resins.

  (A) A component can be used individually by 1 type or in mixture of 2 or more types.

  The weight average molecular weight of the component (A) is preferably 100,000 or less, and preferably 1000 to 80000 from the viewpoint of further improving the resolution, developability, thermal shock resistance, heat resistance and the like of the resulting resin pattern (cured film). It is more preferable that it is more than 2000 and 50000 or less, it is especially preferable that it is 2000-50000, it is very preferable that it is 2000-20000, and it is very preferable that it is 5000-15000.

  “Weight average molecular weight” refers to a value measured using a standard polystyrene calibration curve in accordance with a gel permeation chromatography (GPC) method. More specifically, a pump (manufactured by Hitachi, Ltd., L -6200 type), column (TSKgel-G5000HXL and TSKgel-G2000HXL, both manufactured by Tosoh Corporation, trade name) and a detector (Hitachi, Ltd., L-3300RI type) and tetrahydrofuran as an eluent And measured at a temperature of 30 ° C. and a flow rate of 1.0 mL / min.

  In the photosensitive resin composition of the present embodiment, the content of the component (A) is based on 100 parts by mass of the photosensitive resin composition (however, when the component (D) is used, excluding the component (D)). It is preferable that it is 30-90 mass parts, and it is more preferable that it is 40-75 mass parts. When the content of the component (A) is in the above range, excellent developability of the photosensitive layer formed using the resulting photosensitive resin composition with respect to an alkaline aqueous solution is easily obtained.

((B) component)
The photosensitive resin composition of this embodiment contains a photosensitive acid generator. The photosensitive acid generator is a compound that generates an acid upon irradiation with an actinic ray or the like. Due to the catalytic effect of the acid generated from the light-sensitive acid generator, two or more functional groups (methylol group and / or alkoxyalkyl group) in component (C) are component (A) (resin having a phenolic hydroxyl group). By forming a cross-linked structure by reacting with, the solubility of the composition in the developer is greatly reduced, and a negative pattern can be formed.

  The component (B) is not particularly limited as long as it is a compound that generates an acid upon irradiation with an actinic ray or the like. Examples include oxime compounds. Among these, at least one selected from the group consisting of an onium salt compound, a sulfonimide compound and an oxime compound is preferable from the viewpoint of easy availability. In particular, when a solvent is used, an onium salt compound is preferable from the viewpoint of excellent solubility in the solvent.

  Examples of the onium salt compound include iodonium salts, sulfonium salts, phosphonium salts, diazonium salts, pyridinium salts, and the like. Specific examples of preferred onium salt compounds include diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluorobutanesulfonate, diphenyliodonium heptadecafluorooctanesulfonate, diphenyliodonium p-toluenesulfonate, diphenyliodonium hexafluoroantimonate, diphenyliodonium hexafluorophosphate Diaryl iodonium salts such as diphenyliodonium tris (pentafluoroethyl) trifluorophosphate, diphenyliodonium tetrafluoroborate, diphenyliodonium tetrakis (pentafluorophenyl) borate, diphenyliodonium tris [(trifluoromethyl) sulfonyl] methanide; Triarylsulfonium salts such as sulfonium trifluoromethanesulfonate, triphenylsulfonium p-toluenesulfonate, triphenylsulfonium hexafluoroantimonate; 4-t-butylphenyl-diphenylsulfonium trifluoromethanesulfonate; 4-t-butylphenyl-diphenylsulfonium p -Toluenesulfonate; 4,7-di-n-butoxynaphthyltetrahydrothiophenium trifluoromethanesulfonate and the like. Among these, a sulfonium salt is preferable from the viewpoint of further improving sensitivity and thermal stability, and a triarylsulfonium salt is more preferable from the viewpoint of further improving thermal stability. An onium salt compound can be used singly or in combination of two or more.

  The onium salt compound has, as a cation, [4- (4-biphenylylthio) phenyl] -4-biphenylylphenylsulfonium, (2-methyl) phenyl [4- (4) from the viewpoint of further excellent sensitivity and resolution. -Biphenylylthio) phenyl] 4-biphenylylsulfonium, [4- (4-biphenylylthio) -3-methylphenyl] 4-biphenylylphenylsulfonium, (2-ethoxy) phenyl [4- (4-biphenylyl) It is preferable to have at least one selected from the group consisting of (ruthio) -3-ethoxyphenyl] 4-biphenylylsulfonium and tris [4- (4-acetylphenylsulfanyl) phenyl] sulfonium.

  From the viewpoint of further improving sensitivity and resolution, the onium salt compound has trifluoromethanesulfonate, nonafluorobutanesulfonate, hexafluoroantimonate, hexafluorophosphate, tetrafluoroborate, tris (pentafluoroethyl) trifluorophosphate as anions. And at least one selected from the group consisting of tetrakis (pentafluorophenyl) borate.

  Specific examples of the sulfonimide compound include N- (trifluoromethylsulfonyloxy) succinimide, N- (trifluoromethylsulfonyloxy) phthalimide, N- (trifluoromethylsulfonyloxy) diphenylmaleimide, N- (trifluoromethylsulfonyl). Oxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (trifluoromethylsulfonyloxy) naphthylimide, N- (p-toluenesulfonyloxy) -1,8- And naphthalimide, N- (10-camphorsulfonyloxy) -1,8-naphthalimide, and sulfonimide compounds having an aromatic ring (excluding the aforementioned compounds). A sulfonimide compound can be used individually by 1 type or in mixture of 2 or more types.

  In addition, photosensitive acid generators include aromatic tetracarboxylic acid esters, aromatic sulfonic acid esters, nitrobenzyl esters, oxime sulfonic acid esters, aromatic N-oxyimide sulfonates, aromatic sulfamides, and haloalkyl groups. Examples thereof include hydrocarbon compounds, haloalkyl group-containing heterocyclic compounds, naphthoquinonediazide-4-sulfonic acid esters, and the like. These compounds can be used individually by 1 type or in mixture of 2 or more types.

  (B) A component can be used individually by 1 type or in mixture of 2 or more types. (B) A component and another sensitizer can be used in combination.

  In the photosensitive resin composition of the present embodiment, the content of the component (B) is 100 parts by mass of the component (A) from the viewpoint of further improving the sensitivity, resolution, pattern shape and the like of the photosensitive resin composition. On the other hand, 0.1-15 mass parts is preferable, 0.3-12 mass parts is more preferable, 0.5-10 mass parts is still more preferable, and 1-5 mass parts is especially preferable. In addition, in this specification, 100 mass parts of (A) component means that it is 100 mass parts of solid content of (A) component.

((C) component)
The photosensitive resin composition of the present embodiment is an aliphatic compound (non-aromatic compound having at least one selected from the group consisting of a methylol group and an alkoxyalkyl group as the component (C). ) Excluding compounds corresponding to the components. The component (C) has no alkoxyalkyl group but has two or more methylol groups, has no methylol group, has two or more alkoxyalkyl groups, or has a methylol group and an alkoxyalkyl group Can be used. “Alkoxyalkyl group” means a group in which an alkyl group is bonded to an alkylene group via an oxygen atom. The number of carbon atoms in the alkyl group and alkylene group in the “alkoxyalkyl group” is, for example, 1 to 10, and may be different from each other.

  An acid generate | occur | produces by irradiation of actinic rays etc. because the photosensitive resin composition contains (B) component. Due to the catalytic action of the generated acid, a methylol group in component (C) or a methylol group in component (C) reacts with component (A) with dealcoholization to form a crosslinked structure. A negative pattern can be formed. Alternatively, by the catalytic action of the generated acid, the alkoxyalkyl groups in the component (C) or the alkoxyalkyl groups in the component (C) react with the component (A) with dealcoholization. A structure can be formed and a negative pattern can be formed. The component (C) not only reacts with the component (A), but also increases the dissolution rate of the unexposed area when developing with an alkaline aqueous solution, thereby improving the sensitivity.

  When the photosensitive resin composition contains the component (C), when the photosensitive layer is heated and cured, the components (C) react with each other, or the components (C) and (A) react. By forming a bridge structure, the cured product can be prevented from being weakened and deformed, and heat resistance can be improved.

  The component (C) can have at least one selected from the group consisting of an alicyclic ring and a heterocyclic ring, and an alicyclic compound (a compound having an alicyclic ring) or a heterocyclic compound (a compound having a heterocyclic ring). It may be. Here, the “alicyclic ring” means a cyclic hydrocarbon group having no aromaticity (for example, a cyclic hydrocarbon group having 3 to 10 carbon atoms), for example, a cyclopropane ring, a cyclobutane ring, a cyclo A pentane ring and a cyclohexane ring are mentioned. “Heterocycle” means a cyclic group having at least one hetero atom such as a nitrogen atom, oxygen atom, sulfur atom (for example, a cyclic group having 3 to 10 carbon atoms), such as a pyridine ring, imidazole A ring, a pyrrolidinone ring, an oxazolidinone ring, an imidazolidinone ring and a pyrimidinone ring.

  The component (C) is at least one selected from the group consisting of a compound having a hydroxymethylamino group (N-methylol compound) and a compound having an alkoxymethylamino group, from the viewpoint of further excellent resolution and heat resistance. Species are preferred. A compound having a hydroxymethylamino group is preferred because it is synthesized from an amide compound and an aldehyde compound, and chlorine hardly remains, so that there is less concern about Cu wiring corrosion. As the compound having an alkoxymethylamino group, a compound having two or more alkoxymethylamino groups is preferable from the viewpoint of further excellent resolution and heat resistance, and a compound represented by the following general formula (c1), At least one selected from the group consisting of the compound represented by (c2) and the compound represented by the following general formula (c3) is more preferred.

In general formula (c1), a plurality of R ^C1 each independently represents an alkyl group (for example, an alkyl group having 1 to 10 carbon atoms). The plurality of R ^C1 may be the same as or different from each other.

In general formula (c2), several ^RC2 shows an alkyl group (for example, a C1-C10 alkyl group) each independently. The plurality of R ^C2 may be the same as or different from each other.

In general formula (c3), several ^RC3 shows an alkyl group (for example, a C1-C10 alkyl group) each independently. The plurality of R ^C3 may be the same as or different from each other.

  Examples of the compound having a hydroxymethylamino group include (poly) (N-hydroxymethyl) glycoluril, (poly) (N-hydroxymethyl) urea and the like. Further, a nitrogen-containing compound (such as a compound having an alkoxymethylamino group) obtained by alkylating all or part of the hydroxymethylamino group may be used. Here, examples of the alkyl group of the alkyl ether include a methyl group, an ethyl group, a butyl group, or a mixture thereof, and may contain an oligomer component that is partially self-condensed. Examples of the compound having an alkoxymethylamino group include tetrakis (methoxymethyl) glycoluril (1,3,4,6-tetrakis (methoxymethyl) glycoluril and the like), tetrakis (butoxymethyl) glycoluril (1,3,4, 6-tetrakis (butoxymethyl) glycoluril and the like), 1,3-bis (methoxymethyl) -4,5-dimethoxy-2-imidazolinone, tetrakis (methoxymethyl) urea (1,1,3,3-tetrakis ( Methoxymethyl) urea), tetrakis (butoxymethyl) urea (1,1,3,3-tetrakis (butoxymethyl) urea), 1,3-bis (methoxymethyl) urea and the like.

  (C) A component can be used individually by 1 type or in mixture of 2 or more types.

  In the photosensitive resin composition of the present embodiment, the content of the component (C) is preferably 25 to 95 parts by mass with respect to 100 parts by mass of the component (A), and is 45 to 90 parts by mass. Is more preferable, and it is still more preferable that it is 60-80 mass parts. When the content of the component (C) is 25 parts by mass or more, the reaction of the exposed part becomes sufficient, so that the resolution is hardly lowered, and the chemical resistance and heat resistance tend to be further improved. When the amount is 95 parts by mass or less, the photosensitive resin composition is easily formed on a desired support, and the resolution tends to be further improved.

((D) component)
The photosensitive resin composition of this embodiment can contain a solvent as (D) component. (D) component can be used in order to improve the handleability of the photosensitive resin composition, or to adjust a viscosity and storage stability. The component (D) is preferably an organic solvent. The organic solvent is not particularly limited as long as it can exhibit the above performance, but ethylene glycol monoalkyl ether acetate such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; propylene glycol monomethyl ether, propylene glycol monoethyl Propylene glycol monoalkyl ethers such as ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether; Propylene glycol dialkyl ethers such as propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol dipropyl ether, propylene glycol dibutyl ether; Propylene glycol monomethyl ether acetate Propylene glycol monoalkyl ether acetates such as propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate; cellosolves such as ethyl cellosolve and butyl cellosolve; carbitols such as butyl carbitol; methyl lactate, ethyl lactate, Lactic acid esters such as n-propyl lactate and isopropyl lactate; ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate, isobutyl acetate, n-amyl acetate, isoamyl acetate, isopropyl propionate, n-butyl propionate, propionate Aliphatic carboxylic acid esters such as isobutyl acid; methyl 3-methoxypropionate, ethyl 3-methoxypropionate, 3-ethoxypropionate Other esters such as methyl nitrate, ethyl 3-ethoxypropionate, methyl pyruvate, ethyl pyruvate; aromatic hydrocarbons such as toluene, xylene; 2-butanone, 2-heptanone, 3-heptanone, 4-heptanone, Ketones such as cyclohexanone; amides such as N, N-dimethylformamide, N-methylacetamide, N, N-dimethylacetamide and N-methylpyrrolidone; lactones such as γ-butyrolactone. (D) A component can be used individually by 1 type or in mixture of 2 or more types.

  In the photosensitive resin composition of this embodiment, content of (D) component is 30-200 mass with respect to 100 mass parts of photosensitive resin compositions except (D) component from a viewpoint which is excellent in viscosity stability. Part is preferable, and 60 to 120 parts by mass is more preferable.

((E) component)
The photosensitive resin composition of this embodiment is an aromatic compound (compound having an aromatic ring. It corresponds to the component (A)) having at least one selected from the group consisting of a methylol group and an alkoxyalkyl group as the component (E). The compound to be removed). Here, the “aromatic ring” means a cyclic hydrocarbon group having aromaticity (for example, a cyclic hydrocarbon group having 6 to 10 carbon atoms) or a heteroaromatic ring, such as a benzene ring or a naphthalene ring. And a triazine ring.

  When the photosensitive resin composition contains the component (E), when the photosensitive layer is heated and cured, the component (E) reacts with the component (A) to easily form a bridge structure, and the cured product Weakening and deformation can be further prevented, and heat resistance can be further improved. The component (E) is preferably at least one selected from the group consisting of an aromatic compound having a phenolic hydroxyl group, an aromatic compound having a hydroxymethylamino group, and an aromatic compound having an alkoxymethylamino group. (E) A component can be used individually by 1 type or in mixture of 2 or more types.

  The “aromatic compound having a phenolic hydroxyl group” used as the component (E) has a methylol group or an alkoxyalkyl group, so that it not only reacts with the component (A) but also develops in an aqueous alkaline solution. The dissolution rate can be increased to further improve the sensitivity. The weight average molecular weight of the aromatic compound having a phenolic hydroxyl group is preferably 94 to 2000, and preferably 108 to 2000 in consideration of improving the solubility in aqueous alkali solution, photosensitivity, mechanical properties and the like in a balanced manner. More preferably, it is more preferably 108-1500. In addition, about the compound with a low molecular weight, when it is difficult to measure by the above-mentioned measuring method of the weight average molecular weight, the molecular weight can be measured by another method, and the average can be calculated.

As the compound having a phenolic hydroxyl group, a conventionally known compound can be used. From the viewpoint of excellent balance between the effect of promoting the dissolution of the unexposed area and the effect of preventing the melting during curing of the photosensitive layer, A compound represented by the general formula (e1) is preferable.

In General Formula (e1), Z represents a single bond or a divalent organic group, R ¹¹ and R ¹² each independently represent a hydrogen atom or a monovalent organic group, and R ¹³ and R ¹⁴ each represent Each independently represents a monovalent organic group, a and b each independently represent an integer of 1 to 3, and c and d each independently represents an integer of 0 to 3. Here, examples of the monovalent organic group include an alkyl group having 1 to 10 carbon atoms such as a methyl group, an ethyl group, and a propyl group; and 2 to 10 carbon atoms such as a vinyl group. An alkenyl group; an aryl group having 6 to 30 carbon atoms, such as a phenyl group; and a group in which some or all of the hydrogen atoms of these hydrocarbon groups are substituted with a halogen atom such as a fluorine atom. When there are a plurality of R ^{11 to} R ¹⁴ , they may be the same as or different from each other.

The compound represented by the general formula (e1) is preferably a compound represented by the following general formula (e2).

In General Formula (e2), X ¹ represents a single bond or a divalent organic group, and the plurality of R ² each independently represents an alkyl group (for example, an alkyl group having 1 to 10 carbon atoms). A plurality of R ² may being the same or different.

Moreover, you may use the compound represented by the following general formula (e3) as a compound which has the said phenolic hydroxyl group.

In general formula (e3), several R < ³ > shows an alkyl group (for example, a C1-C10 alkyl group) each independently. The plurality of R ³ may be the same as or different from each other.

In general formula (e1), the compound in which Z is a single bond is a biphenol (dihydroxybiphenyl) derivative. In addition, examples of the divalent organic group represented by Z include an alkylene group having 1 to 10 carbon atoms such as a methylene group, an ethylene group, and a propylene group; and 2 to 10 carbon atoms such as an ethylidene group. An alkylidene group; an arylene group having 6 to 30 carbon atoms, such as a phenylene group; a group in which some or all of the hydrogen atoms of these hydrocarbon groups are substituted with halogen atoms such as fluorine atoms; a sulfonyl group; a carbonyl group Ether bond; sulfide bond; amide bond and the like. Among these, Z is preferably a divalent organic group represented by the following general formula (e4).

In the general formula (e4), ^{X 2} is a single bond, an alkylene group (e.g., alkylene group having 1 to 10 carbon atoms), an alkylidene group (e.g., an alkylidene group having a carbon number of 2 to 10), their A group in which part or all of the hydrogen atoms are substituted with a halogen atom, a sulfonyl group, a carbonyl group, an ether bond, a sulfide bond, or an amide bond is shown. R ⁴ represents a hydrogen atom, a hydroxyl group, an alkyl group (for example, an alkyl group having 1 to 10 carbon atoms) or a haloalkyl group, and e represents an integer of 1 to 10. A plurality of R ⁴ and X ² may be the same as or different from each other. Here, the “haloalkyl group” means an alkyl group substituted with a halogen atom.

  Examples of the compound having a hydroxymethylamino group include (poly) (N-hydroxymethyl) melamine, (poly) (N-hydroxymethyl) benzoguanamine and the like. Further, a nitrogen-containing compound (such as a compound having an alkoxymethylamino group) obtained by alkylating all or part of the hydroxymethylamino group may be used. Here, examples of the alkyl group of the alkyl ether include a methyl group, an ethyl group, a butyl group, or a mixture thereof, and may contain an oligomer component that is partially self-condensed. Examples of the compound having an alkoxymethylamino group include hexakis (methoxymethyl) melamine and hexakis (butoxymethyl) melamine.

  In the photosensitive resin composition of this embodiment, it is preferable that content of (E) component is 5-50 mass parts with respect to 100 mass parts of (A) component, and is 5-30 mass parts. Is more preferable.

((F) component)
The photosensitive resin composition of this embodiment may further contain a sensitizer as the component (F) as necessary. When the photosensitive resin composition contains the component (F), the sensitivity of the photosensitive resin composition can be improved. Examples of the sensitizer include 9,10-dibutoxyanthracene. (F) A component can be used individually by 1 type or in mixture of 2 or more types.

  In the photosensitive resin composition of this embodiment, it is preferable that content of (F) component is 0.01-1.5 mass parts with respect to 100 mass parts of (A) component, 0.05- More preferably, it is 0.5 parts by mass.

(Other ingredients)
The photosensitive resin composition of this embodiment may contain other components other than the above-mentioned components. Examples of other components include a silane coupling agent, an antioxidant, an inorganic filler, an adhesion aid, and a leveling agent.

<Photosensitive element>
The photosensitive element of this embodiment is demonstrated.

  The photosensitive element of this embodiment is equipped with the support body and the photosensitive layer provided on the said support body, and the said photosensitive layer contains the photosensitive resin composition of this embodiment. The photosensitive layer is formed using the photosensitive resin composition of the present embodiment. The photosensitive element of this embodiment may further include a protective film that covers the photosensitive layer on the photosensitive layer.

  As the support, for example, a polymer film having heat resistance and solvent resistance, such as polyester (polyethylene terephthalate, etc.), polypropylene, polyethylene, or the like can be used. The thickness of the support (polymer film or the like) is preferably 5 to 25 μm. In addition, you may use the said polymer film by laminating | stacking on both surfaces of a photosensitive layer so that a photosensitive layer may be pinched | interposed using one as a support body and the other as a protective film.

  As the protective film, for example, a polymer film having heat resistance and solvent resistance such as polyester (polyethylene terephthalate, etc.), polypropylene, and polyethylene can be used.

  The photosensitive layer can be formed by applying the photosensitive resin composition on a support or a protective film. Examples of the coating method include a dipping method, a spray method, a bar coating method, a roll coating method, and a spin coating method. Although the thickness of a photosensitive layer changes with uses, it is preferable that it is 10-100 micrometers after drying a photosensitive layer, It is more preferable that it is 10-60 micrometers, It is still more preferable that it is 10-50 micrometers.

<Method for forming resist pattern>
A method for forming a resist pattern according to the present embodiment (first embodiment and second embodiment) will be described. The resist pattern forming method of the first embodiment includes a photosensitive layer preparation step of forming a photosensitive layer containing the photosensitive resin composition on a substrate (for example, a substrate), and exposure for exposing the photosensitive layer to a predetermined pattern. And a development step of developing the photosensitive layer after the exposure step to obtain a resin pattern, and a heat treatment step of heat-treating the resin pattern. The resist pattern forming method according to the second embodiment includes a photosensitive layer preparation step of arranging the photosensitive layer of the photosensitive element on a substrate, an exposure step of exposing the photosensitive layer to a predetermined pattern, and the exposure step. Thereafter, a development step of developing the photosensitive layer to obtain a resin pattern and a heat treatment step of heat-treating the resin pattern are provided. The resist pattern of the present embodiment is a resist pattern obtained by the resist pattern forming method of the present embodiment.

  In the photosensitive layer preparation step in the resist pattern forming method of the first embodiment, for example, the photosensitive resin composition is applied onto a base material (for example, a substrate), and the photosensitive resin composition is dried to form a photosensitive layer. It is a process of forming. The photosensitive layer preparation step in the resist pattern forming method of the second embodiment is a step of arranging the photosensitive layer on a base material (for example, a substrate) using, for example, the photosensitive element. The resist pattern forming method of this embodiment may further include a step of heat-treating (post-exposure baking) the photosensitive layer between the exposure step and the development step. In this case, the resist pattern forming method of the present embodiment includes a step of exposing the photosensitive layer to a predetermined pattern and performing a post-exposure heat treatment (post-exposure bake), and the post-heat treatment (post-exposure bake). Developing the photosensitive layer, and heat-treating the obtained resin pattern. Hereinafter, each step will be further described.

  In the resist pattern forming method of this embodiment, for example, first, a photosensitive layer containing the above-described photosensitive resin composition is formed on a substrate on which a resist pattern is to be formed. As the method for forming the photosensitive layer, the photosensitive resin composition is applied to a substrate (for example, coating), dried to volatilize a solvent or the like to form a photosensitive layer (coating film), or the above-described photosensitive layer. And a method of transferring (laminating) the photosensitive layer of the conductive element onto the substrate.

  Examples of the substrate include a substrate. As the substrate, for example, a copper foil with resin, a copper clad laminate, a silicon wafer with a metal sputtered film, a silicon wafer with a copper plating film, an alumina substrate, or the like can be used. The surface on which the photosensitive layer is formed on the substrate may be a cured resin layer formed using the photosensitive resin composition. In that case, there exists a tendency for adhesiveness with a base material to improve.

  As a method for applying the photosensitive resin composition to the substrate, for example, a coating method such as a dipping method, a spray method, a bar coating method, a roll coating method, or a spin coating method can be used. The thickness of the coating film can be appropriately controlled by adjusting the coating means and the solid content concentration and viscosity of the photosensitive resin composition.

Next, the photosensitive layer is exposed to a predetermined pattern through a predetermined mask pattern. Examples of actinic rays used for exposure include rays using a g-line stepper as a light source; ultraviolet rays using a low-pressure mercury lamp, high-pressure mercury lamp, metal halide lamp, i-line stepper and the like as a light source; electron beams; Exposure amount, the light source used is suitably selected depending on the thickness of the photosensitive layer, for example, in the case of ultraviolet radiation from a high pressure mercury lamp, the thickness of 10~50μm of the photosensitive layer, in order 1000~20000J / ^{m 2} is there.

  Furthermore, heat treatment (post-exposure baking) may be performed before post-exposure development. By performing post-exposure baking, the curing reaction between the component (A) and the component (C) by the acid generated from the photosensitive acid generator can be promoted. The post-exposure baking conditions vary depending on the composition of the photosensitive resin composition, the content of each component, the thickness of the photosensitive layer, etc., but for example, heating at 70 to 150 ° C. for about 1 to 60 minutes is preferable, 75 It is more preferable to heat at about 120 ° C. for about 1 to 60 minutes.

  Next, the photosensitive layer that has been subjected to exposure and / or post-exposure baking is developed with an alkaline developer, and an unexposed area (area other than the cured area) is dissolved and removed to obtain a desired resin pattern. Examples of the developing method in this case include a shower developing method, a spray developing method, an immersion developing method, and a paddle developing method. The development conditions are, for example, 20 to 40 ° C. and 1 to 10 minutes.

  Examples of the alkaline developer include an alkaline aqueous solution in which an alkaline compound such as sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, and choline is dissolved in water so that the concentration is about 1 to 10% by mass; Can be mentioned. An appropriate amount of a water-soluble organic solvent such as methanol or ethanol, a surfactant, or the like can be added to the alkaline aqueous solution. In addition, after developing with an alkaline developer, it can be washed with water and dried. The alkaline developer is preferably an aqueous solution of tetramethylammonium hydroxide from the viewpoint of further excellent resolution.

  Furthermore, the cured film (resist pattern) of the photosensitive resin composition is obtained by performing a heat treatment to develop the insulating film characteristics. The curing conditions of the photosensitive resin composition are not particularly limited, but can be adjusted according to the use of the cured product. For example, the photosensitive resin composition can be cured by heating at 50 to 200 ° C. for about 30 minutes to 10 hours.

  Moreover, in order to fully advance hardening and / or to prevent the deformation | transformation of the obtained resin pattern, it can also heat in two steps. For example, it can be cured by heating at 50 to 120 ° C. for about 5 minutes to 2 hours in the first stage and further heating at 80 to 200 ° C. for about 10 minutes to 10 hours in the second stage.

  When the heat treatment is performed under the above-described curing conditions, the heating equipment is not particularly limited, and a general oven, infrared furnace, or the like can be used.

<Hardened product and semiconductor device>
The cured product of the present embodiment is a cured product of the photosensitive resin composition of the present embodiment. The semiconductor device of this embodiment includes a cured product of the photosensitive resin composition of this embodiment, and is, for example, a multilayer printed wiring board. The cured product of the photosensitive resin composition of the present embodiment is preferably used as, for example, a surface protective film and / or an interlayer insulating film of a semiconductor element, or a solder resist and / or an interlayer insulating film in a multilayer printed wiring board. it can.

  FIG. 1 is a view showing a method for producing a multilayer printed wiring board including a cured product of the photosensitive resin composition of the present embodiment as a solder resist and / or an interlayer insulating film. A multilayer printed wiring board 100 shown in FIG. 1F has a wiring pattern on the surface and inside. The multilayer printed wiring board 100 is obtained by laminating a copper clad laminate, an interlayer insulating film, a metal foil, and the like and appropriately forming a wiring pattern by an etching method or a semi-additive method. Hereinafter, the manufacturing method of the multilayer printed wiring board 100 is demonstrated easily based on FIG.

  First, an interlayer insulating film 103 is formed on both surfaces of a base material 101 (such as a copper clad laminate) having a wiring pattern 102 on the surface (see FIG. 1A). The interlayer insulating film 103 may be formed by printing a photosensitive resin composition using a screen printer or a roll coater. The above photosensitive element is prepared in advance, and the photosensitive element is prepared using a laminator. The photosensitive layer in can be formed by affixing to the surface of the printed wiring board.

  Next, an opening 104 is formed using a YAG laser or a carbon dioxide gas laser in a place that needs to be electrically connected to the outside (see FIG. 1B). Smear (residue) around the opening 104 is removed by desmear treatment.

  Next, a seed layer 105 is formed by an electroless plating method (see FIG. 1C). A photosensitive layer containing the above-described photosensitive resin composition is formed on the seed layer 105, and a predetermined pattern is exposed and developed to form a resin pattern 106 (see FIG. 1D).

  Next, after forming an adhesion layer (for example, a titanium layer having a thickness of about 30 nm) on the seed layer 105, a Cu layer having a thickness of about 100 nm is formed. The adhesion layer can be formed by a sputtering method.

  Next, a wiring pattern 107 is formed on the portion of the seed layer 105 where the resin pattern 106 is not formed by electroplating, and after removing the resin pattern 106 with a stripping solution, the wiring pattern 107 of the seed layer 105 is formed. The part which is not removed is removed by etching (see FIG. 1E).

  The multilayer printed wiring board 100 can be manufactured by repeating the above operation and forming the solder resist 108 containing the hardened | cured material of the above-mentioned photosensitive resin composition on the outermost surface (refer FIG.1 (f)).

  In the multilayer printed wiring board 100 obtained in this way, semiconductor elements are mounted at corresponding locations, and electrical connection can be ensured.

  EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated in detail, this invention is not limited to these Examples at all.

  The following compounds were used as each component in the examples and comparative examples.

((A) component)
A-1: Cresol novolak resin (Asahi Organic Materials Co., Ltd., trade name: TR-4080G, weight average molecular weight: 4800)
A-2: Cresol novolak resin (Asahi Organic Materials Co., Ltd., trade name: TR-4020G, weight average molecular weight: 15000)
A-3: p-hydroxystyrene-styrene copolymer (manufactured by Maruzen Petrochemical Co., Ltd., trade name: Marcalinker CST-70, weight average molecular weight: 10,000)
A-4: p-hydroxystyrene-methylmethacrylic acid copolymer (manufactured by Maruzen Petrochemical Co., Ltd., trade name: Marcalinker CMM-70, weight average molecular weight: 10,000)

((B) component)
B-1: Triarylsulfonium salt (manufactured by San Apro Co., Ltd., trade name: CPI-310B, anion: tetrakis (pentafluorophenyl) borate)
B-2: Sulfonimide compound (manufactured by San Apro Co., Ltd., trade name: NT-1TF)
B-3: Oxime compound (BASF Corporation, trade name: Irgacure PAG-103)

((C) component)
C-1: 1,3,4,6-tetrakis (methoxymethyl) glycoluril (manufactured by Sanwa Chemical Co., Ltd., trade name: Nicalak MX-270)
C-2: 1,3-bis (methoxymethyl) -4,5-dimethoxy-2-imidazolinone (manufactured by Sanwa Chemical Co., Ltd., trade name: Nicalak MX-280)
C-3: 1,3-bis (methoxymethyl) urea (manufactured by Sanwa Chemical Co., Ltd., trade name: Nicalak MX-290)

((D) component)
D-1: Methyl ethyl ketone (manufactured by Wako Pure Chemical Industries, Ltd., trade name: 2-butanone)

(Other ingredients)
Silane coupling agent: 3-glycidoxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KBM-403)
Antioxidant: 4,4′-butylidenebis (6-tert-butyl-m-cresol) (AP Corporation, trade name: Yoshinox BB)
X-1: Ethyl glycidyl ether (trade name, manufactured by Tokyo Chemical Industry Co., Ltd.)
X-2: Phenyl glycidyl ether (trade name, manufactured by Wako Pure Chemical Industries, Ltd.)
X-3: Tris (4-hydroxyphenyl) methane triglycidyl ether (manufactured by Aldrich, trade name)
X-4: Biphenyl aralkyl type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: NC-3000H)
X-5: Ethylene glycol diglycidyl ether (manufactured by Kyoeisha Co., Ltd., trade name: Epolite 40E)
X-6: Sorbitol polyglycidyl ether (manufactured by Nagase ChemteX Corporation, trade name: Denacol EX-610U)
X-7: Pentaerythritol triacrylate (manufactured by Nippon Kayaku Co., Ltd., trade name: PET-30)

<Evaluation of resolution>
A predetermined amount of each component shown in Table 1 and Table 2 was mixed to obtain a photosensitive resin composition.

  After coating the photosensitive resin composition on a polyethylene terephthalate film (support, manufactured by Teijin DuPont Films Ltd., trade name: Purex A53) so that the thickness of the layer is uniform, hot air convection at 90 ° C. The film was dried for 10 minutes with a drier to form a photosensitive layer having a thickness of 10 μm after drying. On this photosensitive layer, a polyethylene film (trade name: NF-15, manufactured by Tamapoly Co., Ltd.) was bonded as a protective layer to obtain a photosensitive element in which a support, a photosensitive layer, and a protective layer were sequentially laminated.

After removing the protective layer of the photosensitive element, the photosensitive layer (thickness: 10 μm) of the photosensitive element was laminated on a silicon wafer having a diameter of 6 inches, and a support, a photosensitive layer, and a silicon wafer were provided in this order. A laminate was obtained. Lamination was performed using a 100 ° C. heat roll at a pressure of 0.4 MPa and a roll speed of 1.0 m / min. The produced laminate was subjected to reduced projection exposure through a mask with i-line (wavelength 365 nm) using an i-line stepper (manufactured by Canon Inc., trade name: FPA-3000iW). A mask having a circular pattern of 1 μm to 50 μm was used. Further, the reduction projection exposure was performed while changing the exposure amount by 100 mJ / cm ^{2 in} the range of 100 to 2000 mJ / cm ² .

  Next, the exposed photosensitive layer was heated at 75 ° C. for 8 minutes (post-exposure baking). Next, a developer (2.38 mass% tetramethylammonium hydroxide aqueous solution, manufactured by Tama Chemical Industry Co., Ltd., trade name: TMAH 2.38%), and a developing machine (manufactured by Takizawa Sangyo Co., Ltd., trade name: AD-1200) ) Is sprayed onto the photosensitive layer for a time corresponding to four times the shortest development time (the shortest time to remove the unexposed area) (pump discharge pressure [developer]: 0.16 MPa), The exposed part was removed. Next, purified water (manufactured by Wako Pure Chemical Industries, Ltd.) is sprayed as a rinse solution for 30 seconds (pump discharge pressure [rinse solution]: 0.12 to 0.14 MPa), the developer is washed away, and then dried. A resin pattern was formed. The resin pattern was heated at 75 ° C. for 8 minutes. The formed resin pattern was observed by enlarging the magnification to 1000 times using a metal microscope. Among the patterns in which the space portion (unexposed portion) was removed cleanly and the line portion (exposed portion) was formed without causing meandering or chipping, the size of the smallest circle was evaluated as the minimum resolution. The results are shown in Tables 1 and 2. In Tables 1 and 2, the case where the pattern could not be formed was indicated as “X”.

<Evaluation of heat resistance>
The photosensitive resin composition is uniformly applied onto a polyethylene terephthalate film (trade name: Purex A53, manufactured by Teijin DuPont Films Ltd.), then dried for 10 minutes with a hot air convection dryer at 90 ° C., and then dried. A photosensitive layer having a thickness of 40 μm was formed. Subsequently, the photosensitive layer was exposed using an exposure machine having a high-pressure mercury lamp (trade name: EXM-1201, manufactured by Oak Manufacturing Co., Ltd.) so that the amount of irradiation energy was 1000 mJ / cm ² . The exposed photosensitive layer is heated on a hot plate at 65 ° C. for 2 minutes, then at 95 ° C. for 8 minutes, further heated at 180 ° C. for 60 minutes in a hot air convection dryer, and then cured from a polyethylene terephthalate film. The film was peeled off. Using a thermomechanical analyzer (trade name: TMA / SS6000, manufactured by Seiko Instruments Inc.), the coefficient of thermal expansion of the cured film is measured when the temperature is increased at a rate of temperature increase of 5 ° C./min. Was obtained as the glass transition temperature Tg. The results are shown in Tables 1 and 2. The photosensitive resin composition that could not form a pattern in the resolution evaluation was not measured and indicated as “X” in the table. The measurement conditions for the coefficient of thermal expansion are shown below.
Sample width: 2mm
Sample length: 20mm
Distance between chucks: 10 mm
Load: 5g
Pulling speed: 5mm / min
Measurement temperature range: 18-420 ° C

<Evaluation of HAST resistance>
Etching is applied to the copper surface of a printed wiring board substrate (trade name: MCL-E-679, manufactured by Hitachi Chemical Co., Ltd.), in which a 12 μm thick copper foil is laminated on a glass epoxy substrate, and the line / space is 50 μm / A substrate having a 50 μm comb electrode was obtained as an evaluation substrate. A cured resist (permanent resist film, thickness: 25 μm) was formed on the comb electrode on the substrate so that the resist remained in the comb electrode portion. The cured product of the resist was formed by curing the photosensitive layer of the photosensitive resin composition (Examples 1, 9 to 11, 15, 16) containing the components shown in Table 1. Then, it tested for 300 hours on conditions of 130 degreeC, 85% RH, and 3.3V. The resistance value at each time was measured, and when the resistance value became 1 × 10 ⁻⁶ Ω or less, it was determined that a short circuit occurred, and the HAST resistance was evaluated according to the following criteria. The results are shown in Table 1.
“A”: No short circuit occurred within 300 hours.
“B”: No short circuit occurred within 100 hours, but a short circuit occurred within 300 hours.
“C”: No short circuit occurred within 10 hours, but a short circuit occurred within 100 hours.
“D”: A short circuit occurred within 10 hours.

  As shown in Tables 1 and 2, in the example, a higher resolution pattern was obtained than in the comparative example. Moreover, in Example, Tg was 150 degreeC or more, and heat resistance was high. Furthermore, in the examples, the HAST resistance was good.

  DESCRIPTION OF SYMBOLS 100 ... Multilayer printed wiring board, 101 ... Base material, 102, 107 ... Wiring pattern, 103 ... Interlayer insulation film, 104 ... Opening part, 105 ... Seed layer, 106 ... Resin pattern, 108 ... Solder resist.

Claims (10)

(A) component: a resin having a phenolic hydroxyl group;
(B) component: a photosensitive acid generator;
Component (C): a photosensitive resin composition containing an aliphatic compound having two or more selected from the group consisting of a methylol group and an alkoxyalkyl group.   The photosensitive resin composition of Claim 1 in which the said (C) component has at least 1 sort (s) chosen from the group which consists of an alicyclic ring and a heterocyclic ring.   The photosensitive resin composition of Claim 1 or 2 whose content of the said (C) component is 25-95 mass parts with respect to 100 mass parts of said (A) component.   The photosensitive resin composition as described in any one of Claims 1-3 which further contains a solvent. A support, and a photosensitive layer provided on the support,
The photosensitive element in which the said photosensitive layer contains the photosensitive resin composition as described in any one of Claims 1-4.   Hardened | cured material of the photosensitive resin composition as described in any one of Claims 1-4.   A semiconductor device comprising the cured product according to claim 6. Forming a photosensitive layer containing the photosensitive resin composition according to any one of claims 1 to 4 on a substrate;
An exposure step of exposing the photosensitive layer to a predetermined pattern;
A development step of developing the photosensitive layer after the exposure step to obtain a resin pattern;
And a heat treatment step of heat-treating the resin pattern. Disposing the photosensitive layer of the photosensitive element according to claim 5 on a substrate;
An exposure step of exposing the photosensitive layer to a predetermined pattern;
A development step of developing the photosensitive layer after the exposure step to obtain a resin pattern;
And a heat treatment step of heat-treating the resin pattern.   The method for forming a resist pattern according to claim 8, further comprising a step of heat-treating the photosensitive layer between the exposure step and the development step.

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