JP2020026425A - Amino silane compound, and composition for formation of silicon-containing film containing amino silane compound - Google Patents

Abstract

To provide a silicon precursor whereby, in the formation of a silicon-containing film, the film formation rate is improved by improved adsorptivity to the substrate surface during the film formation and the decomposition temperature is reduced, so that the film can be formed at lower temperature.SOLUTION: An amino silane compound, which can be decomposed at low temperature, is used as a silicon precursor, so that the film is formed at lower temperature, adsorptivity to the substrate is improved, and the film formation rate is improved.SELECTED DRAWING: None

Description

  The technical field of the present invention relates to a novel aminosilane compound and a composition containing the compound for forming a silicon-containing film.

  In the production of semiconductor devices, silicon-containing thin films have been manufactured into various forms of thin films such as silicon films, silicon oxide films, silicon nitride films, silicon carbonitride films, and silicon oxynitride films by various deposition processes. It is applied in various fields. Above all, silicon oxide film and silicon nitride film have extremely excellent blocking characteristics and oxidation resistance, so in the production of devices, insulating films, intermetal dielectrics, seed layers, spacers, hard masks, trench isolation, diffusion prevention Functions as a film, an etching stop layer, and a protective film layer.

  In recent years, with the miniaturization of devices, the increase in aspect ratio, and the diversification of device materials, technology for forming ultra-fine thin films with excellent electrical properties at low temperatures has been required. In the conventional film forming method, the film forming temperature needs to be set to 600 ° C. or more, and there is a problem in that the step coverage, the etching characteristics, and the physical and electrical characteristics of the thin film deteriorate.

In order to solve this problem, ammonia radicals (NH _3. ) In which dichlorosilane (DCS: SiH ₂ Cl ₂ ) and ammonia (NH ₃ ) are activated by plasma are alternately supplied by an atomic layer deposition (ALD) method. Then, tetrachlorosilane (TCS: SiCl ₄ ) and water (H ₂ O) are reacted by a method of forming a silicon nitride film at a low temperature (300 ° C. to 600 ° C.) (Patent Document 1) or an ALD method. Thus, a method of forming a silicon oxide film at a low temperature (300 ° C. to 400 ° C.) (Patent Document 2) has been proposed.

JP-A-2004-281853 JP 2005-11904 A

  However, in the method of Patent Document 1, introduction of carbon into the silicon nitride film may cause a structural defect, and thus may degrade insulation resistance. Further, the method of Patent Document 2 has a problem in that TCS, which is a chloride, reacts with water to generate HCl, thereby corroding exhaust piping.

  The present invention has been conceived under such circumstances, and does not contain carbon and halide, and is formed by improving the adsorptivity to the substrate surface during film formation in forming a silicon-containing film. It is a main object to provide a silicon precursor capable of forming a film at a lower temperature by improving the film speed and lowering the decomposition temperature.

  Conventionally, it has been common to use an aminosilane compound in which the same amino group is bonded to a Si atom as a precursor for forming a silicon-containing film for reasons such as ease of synthesis. As a result of intensive studies, it has been found that it is useful to use an aminosilane compound in which different amino groups are bonded to Si atoms as a silicon-containing film precursor in order to obtain a desired effect. Above all, by using an aminosilane compound in which two amino groups of a specific amino group, which is a diisopropylamino group and a non-diisopropylamino group, are bonded to a Si atom as a silicon-containing film precursor, The inventors have found that the film formation rate is improved by improving the adsorptivity to the substrate, and that the film can be formed at a lower temperature by lowering the decomposition temperature, and the present invention has been completed.

That is, the present invention provides the following aspects of the invention.
Item 1 Lower formula:

(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
An aminosilane compound represented by the formula:

Term 2 below formula:

(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
A precursor for forming a silicon-containing film represented by the formula:

Item 3. The precursor according to Item 2, wherein the silicon-containing film is formed by chemical vapor deposition.

Item 4. The precursor according to item 3, wherein the chemical vapor deposition is atomic layer deposition.

Item 5:

(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
A composition for forming a silicon-containing film, comprising an aminosilane compound represented by the formula:

Item 6. The composition according to item 5, wherein the silicon-containing film is formed by chemical vapor deposition.

Item 7 The composition according to Item 6, wherein the chemical vapor deposition is atomic layer deposition.

Item 8:

(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
A method for producing an aminosilane compound represented by
(A) a synthesis step of adding dichlorosilane and a first amine to a solvent to synthesize an aminochlorosilane compound;
(B) a filtration step of removing by-product salts by filtration;
(C) a synthesis step of adding a second amine to a filtrate to synthesize an aminosilane compound; and (d) a distillation step of isolating the aminosilane compound by distillation.

Item 9: The first amine in the synthesis step (a) is diisopropylamine, and the aminochlorosilane compound is represented by the following formula (1):

Wherein the ^second amine in the synthesis step (c) is R ¹ R ² NH
(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
Item 10. The production method according to Item 8, wherein R ¹ R ² NH is represented by the formula:

Item 10. The first amine in the synthesis step (a) is R ¹ R ² NH
(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
Wherein the aminochlorosilane compound is represented by the following formula (2):

(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
9. The production method according to item 8, wherein the intermediate (2) is represented by the formula (2), wherein the second amine in the synthesis step (c) is diisopropylamine.

Item 11:

(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
A method for producing a silicon-containing film using an aminosilane compound represented by the formula:
Item 12. The method for producing a silicon-containing film according to item 11, wherein the silicon-containing film is a silicon oxide film.

  According to the present invention, by using a specific aminosilane compound as a silicon precursor, it has become possible to form a film at a lower temperature without generating a structural defect or a corrosive gas. In addition, according to the method of the present invention, the film formation rate is improved, so that semiconductor devices can be manufactured at lower cost and with higher productivity.

FIG. ^{1 is} a ¹ H-NMR chart of an aminosilane compound (diisopropylaminotert-butylaminosilane) obtained by the production method of the present invention. ^{1 is} a ¹ H-NMR chart of an aminosilane compound (diisopropylaminodimethylaminosilane) obtained by the production method of the present invention.

  The present invention provides the following formula:

(Wherein R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl (i-Pr), n-butyl, sec-butyl, isobutyl and tert. Represents a substituent selected from the group consisting of -butyl groups, provided that both R ¹ and R ² are not isopropyl groups.
The aminosilane compound represented by these is provided.

Preferred specific examples of NR ¹ R ² are NH (t-Bu), N (CH ₃ ) ₂ .

  The dipole moment of the aminosilane compound may be 0.85 D or more, for example, 1.0 D or more, and may be 2.0 D or less, for example, 1.35 D or less. Here, the dipole moment of the aminosilane compound means a vector amount from a negative charge to a positive charge derived from a partial charge on an atom in a molecule of the aminosilane compound. The dipole moment can be calculated by using a commercially available molecular chemistry calculation program. For example, it can be calculated by the density functional theory method (B3LYP / cc-pVDZ) using Gaussian 09 manufactured by Gaussian.

  The method for producing an aminosilane compound according to the present invention comprises: (a) a synthesis step of adding dichlorosilane and a first amine to a solvent to synthesize an aminochlorosilane compound; (b) a filtration step of removing by-product salts by filtration; (C) a synthesis step of adding a second amine to the filtrate to synthesize an aminosilane compound; and (d) a distillation step of isolating the aminosilane compound by distillation.

  Solvents that can be used in the present invention include, for example, hydrocarbons such as hexane, cyclohexane, heptane, nonane, and decane; halogenated hydrocarbons such as dichloroethane, dichloromethane, and chloroform; benzene, toluene, xylene, chlorobenzene, trichlorobenzene, and the like. Aromatic hydrocarbons; and mixtures thereof. Among them, hydrocarbons such as hexane, cyclohexane, heptane, nonane, and decane are preferable, and hexane is particularly preferably used. The amount of the solvent to be used is generally 0.1 to 50 times the mass of dichlorosilane.

  In order to avoid hydrolysis of dichlorosilane, aminochlorosilane and aminosilane, it is desirable that the reaction system is all carried out under anhydrous conditions, and the water in all raw materials used is 0 to 5000 ppm by mass, preferably 0 to 5000 ppm by mass relative to the total mass of the raw materials. Is carried out in the range of 0 to 400 ppm by mass. In addition, it is desirable to use a reactor that has been dried by heating and drying, and performing a reduced pressure and replacing with an inert gas such as nitrogen or argon.

  In the step (a), first, a first amine is dissolved in an organic solvent, and dichlorosilane is added thereto. Alternatively, dichlorosilane is dissolved in an organic solvent, and the first amine is added thereto. Any of a number of methods are applicable to this reaction.

  The amount of the first amine to be used is generally 1 to 4 times mol, preferably 1.5 to 2.5 times mol, from the viewpoint of improving the yield, based on the starting material dichlorosilane.

  Since the reaction is an exothermic reaction, the reaction temperature is preferably performed at a low temperature, but if it is too low, the yield may be reduced. Done. The reaction time is usually in the range of 0.5 to 10 hours.

  In the step (b), by-product salts are removed from the crude product in the reactor. It is preferable to carry out the reaction under a dry inert gas, for example, under nitrogen or argon to suppress the decomposition of aminochlorosilane. The filtration temperature is not uniquely determined, but can be applied from 10 ° C. to the boiling point of the solvent used. Preferably, it is performed at a temperature in the range of 20 ° C to 65 ° C.

  In the step (c), the synthesis is performed by dropping a second amine into the filtrate obtained in the step (b).

  The amount of the second amine to be used is desirably 2 mol or more based on 1 mol of the total amount of the aminochlorosilane as an intermediate. Preferably, there is.

  Since the reaction is an exothermic reaction, the reaction is preferably carried out at a low temperature. However, if the reaction temperature is too low, the yield may be reduced. Will be The reaction time is usually in the range of 0.5 to 10 hours.

  In the step (d), the aminosilane compound is isolated by performing distillation, for example, distillation under reduced pressure. The amine and the organic solvent are easily removed, and the aminosilane compound can be purified with sufficiently high purity.

  The production method of the first aspect of the present invention comprises reacting dichlorosilane with diisopropylamine to obtain the following formula (1):

To produce an intermediate (1) represented by the formula: and R ¹ R ² NH
This is a method of producing by reacting an amine compound represented by Here, specific structures of R ¹ and R ² and preferable examples of NR ¹ R ² are as described above in the description of the aminosilane compound.

The reaction formula of dichlorosilane and diisopropylamine ((i-Pr) ₂ NH) is shown below.

SiH ₂ Cl ₂ + 2 (i-Pr) ₂ NH → (i-Pr) ₂ NSiH ₂ Cl + (i-Pr) ₂ NH ・ HCl

The reaction formula of the intermediate (1) and R ¹ R ² NH is shown below.

In the production method according to the second aspect of the present invention, first, dichlorosilane is reacted with R ¹ R ² NH to obtain the following formula (2):

(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
This is a method of producing an intermediate (2) represented by the following formula, and reacting the intermediate (2) with diisopropylamine.

The reaction formula of dichlorosilane and R ¹ R ² NH is shown below.

SiH ₂ Cl ₂ + 2 R ¹ R ² NH → R ¹ R ² NSiH ₂ Cl + R ¹ R ² NH ・ HCl

  The reaction formula of the intermediate (2) and diisopropylamine is shown below.

Using the aminosilane compound according to the present invention as an intermediate of a silicon-containing film, a silicon-containing film such as a silicon nitride film or a silicon oxide film can be formed on a substrate. More specifically, the method for forming a silicon-containing film according to the present invention comprises:
(E) For the substrate, the following formula:

(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
Contacting an aminosilane composition containing an aminosilane compound represented by the formula to cause the substrate to adsorb the aminosilane composition;
(F) purging the unadsorbed aminosilane composition and by-products;
(G) injecting a reaction gas into the substrate to which the aminosilane composition has been adsorbed to decompose the aminosilane to form an atomic layer; and (h) purging unreacted reaction gas and by-products. Atomic layer deposition.

  The temperature of the substrate (film formation temperature) may be 100 to 600 ° C, preferably 100 to 550 ° C. From the viewpoints of the obtained film properties and energy saving properties, the temperature of the substrate may be 550 ° C or lower, for example, 450 ° C or lower, preferably 400 ° C or lower, more preferably 350 ° C or lower, and further preferably Is 325 ° C. or less. Further, the temperature of the substrate may be 100 ° C. or higher, for example, 150 ° C. or higher. The film formation temperature may be the temperature of at least one of the steps (e) to (h), for example, the temperature of the substrate at the time of contact with the aminosilane composition in the step (e).

  The formation of the silicon-containing film is preferably performed after the replacement with an inert gas such as nitrogen or argon. That is, after the inside of the reaction system is replaced with an inert gas, the above step (e) may be performed.

  The pressure at the time of injecting the aminosilane composition gas or the reaction gas in the step (e) may be 0.05 to 100 Torr, and is preferably performed at 0.05 to 50 Torr. From the viewpoint of energy saving and the like, the supply time of the raw material aminosilane composition gas may be 10 seconds or less, for example, 5 seconds or less, preferably 3 seconds or less, and more preferably 2 seconds or less.

  The purging in the step (f) can be performed by introducing an inert gas such as argon. From the viewpoint of energy saving and the like, the purge time in the step (f) may be 60 seconds or less, for example, 30 seconds or less, and preferably 25 seconds or less.

  The pressure at the time of injecting the aminosilane composition gas or the reaction gas in the step (g) may be 0.05 to 100 Torr, and is preferably performed at 0.05 to 50 Torr. From the viewpoint of energy saving and the like, the supply time of the reaction gas may be 30 seconds or less, for example, 10 seconds or less, and preferably 5 seconds or less.

  In the step (g), at least one gas selected from nitrogen, ammonia, nitrous oxide, nitrogen monoxide, and nitrogen dioxide is used as a reaction gas when forming a silicon nitride film having a Si—N bond. be able to. In forming the silicon oxide film having a Si—O bond, one or more gases selected from oxygen, ozone, and nitric oxide can be used.

  The purging in the step (h) can be performed by introducing an inert gas such as argon. From the viewpoint of energy saving and the like, the purge time in the step (f) may be 120 seconds or less, for example, 60 seconds or less, and preferably 45 seconds or less.

  The aminosilane compound in the present invention is suitably used for producing a silicon-containing film (silicon oxide film, silicon nitride film, etc.) by ALD. In the method for producing a silicon-containing film according to the present invention, the lower limit of the ALD window may be 300 ° C., preferably 275 ° C. In the method for producing a silicon-containing film according to the present invention, the upper limit of the ALD window may be 550 ° C., and preferably 525 ° C. Here, the ALD window generally refers to a temperature range between the temperature at which the silicon-containing film precursor compound is vaporized and the thermal decomposition temperature of the silicon-containing film precursor compound. When the film temperature is taken on the horizontal axis and the deposition rate is taken on the vertical axis, it can be defined as the temperature range from the point at which the deposition rate becomes maximum to the point at which it becomes minimum.

  Hereinafter, the present invention will be described in detail with reference to Examples.

<Synthesis of aminosilane compound>
[Example 1: Synthesis of diisopropylamino tert-butylaminosilane]
After the replacement with nitrogen, 101.2 g (1.0 mol) of diisopropylamine and 800 g of hexane were added to a 2000 mL flask equipped with a blowing pipe, a thermometer, a cooling pipe, and a motor stirrer. Cooled to ° C. A gas of 50.5 g (0.5 mol) of dichlorosilane was introduced by blowing into the liquid at a rate of 50 mL / min for 4 hours while keeping the temperature at 0 ° C. and stirring, whereby white smoke was generated and a white salt was generated. . After blowing in the dichlorosilane, the internal temperature of the flask was gradually warmed to room temperature over 3 hours, and the temperature was maintained while stirring for 5 hours. Then, solids mainly containing amine hydrochloride as a by-product were removed by filtration under reduced pressure in a glove box purged with nitrogen to obtain a hexane solution containing diisopropylaminochlorosilane.

  This diisopropylaminochlorosilane solution was added to a nitrogen-purged 2000 mL flask equipped with a thermometer, a cooling tube, and a motor stirrer, and was cooled to 0 ° C. by throwing it into it using acetone as a refrigerant. 73.14 g (1.0 mol) of tertiary butylamine was slowly dropped over 2 hours while keeping the temperature at 0 ° C. and stirring. Then, solids mainly composed of amine hydrochloride as a by-product were removed by filtration under reduced pressure in a glove box purged with nitrogen to obtain a hexane solution containing diisopropylaminotert-butylaminosilane.

  The crude diisopropylamino tertiary butyl amino silane solution was distilled under normal pressure at an internal temperature of 80 ° C. to remove hexane from the crude diisopropyl amino tertiary butyl amino silane solution. The final product was obtained with high purity.

GC analysis after distillation confirmed that 62.7 g (yield 62%) of the aminosilane compound was obtained with a purity of 99.6 area%. The obtained aminosilane compound was identified by ¹ H-NMR and GC-MS. The assignments of ¹ H-NMR are as follows.

σ (ppm) = 0.79 (( CH 3) 3 -C- NH -, 1H, s), 1.12 ([(CH 3) 2 -CH] 2 -N-, 12H, d, J = 7.0Hz), 1.19 (( CH ₃ ) ₃ -C-NH-, 9H, s), 3.27 ([(CH ₃ ) ₂ - CH ] ₂ -N-, 2H, sep), 4.57 ( -SiH _2- , 2H, d, J = 3.0Hz)

According to the results of the above ¹ H-NMR and GC-MS, the obtained aminosilane compound was represented by the following formula:

It was identified as diisopropylaminotert-butylaminosilane represented by

[Example 2: Synthesis of diisopropylaminodimethylaminosilane]
After the replacement with nitrogen, 101.2 g (1.0 mol) of diisopropylamine and 800 g of hexane were added to a 2000 mL flask equipped with a blowing pipe, a thermometer, a cooling pipe, and a motor stirrer. Cooled to ° C. A gas of 50.5 g (0.5 mol) of dichlorosilane was introduced by blowing into the liquid at a rate of 50 mL / min for 4 hours while keeping the temperature at 0 ° C. and stirring, whereby white smoke was generated and a white salt was generated. . After blowing in the dichlorosilane, the internal temperature of the flask was gradually warmed to room temperature over 3 hours, and the temperature was maintained while stirring for 5 hours. Then, solids mainly containing amine hydrochloride as a by-product were removed by filtration under reduced pressure in a glove box purged with nitrogen to obtain a hexane solution containing diisopropylaminochlorosilane.

  This diisopropylaminochlorosilane solution was added to a nitrogen-purged 2000 mL flask equipped with a thermometer, a cooling tube, and a motor stirrer, and was cooled to 0 ° C. by throwing it into it using acetone as a refrigerant. While maintaining the temperature at 0 ° C and stirring, 45.08 g (1.0 mol) of dimethylamine was slowly blown in over 4 hours. Thereafter, solids mainly composed of amine hydrochloride by-produced were removed by filtration under reduced pressure in a glove box purged with nitrogen to obtain a hexane solution containing diisopropylaminodimethylaminosilane.

  The crude diisopropylaminodimethylaminosilane solution was distilled at atmospheric pressure at an internal temperature of 80 ° C. under normal pressure to remove hexane from the crude diisopropylaminodimethylaminosilane solution. The product was obtained in high purity.

By GC analysis after distillation, it was confirmed that 28.0 g (yield 32%) of the aminosilane compound was obtained with a purity of 96.1 area%. The obtained aminosilane compound was identified by ¹ H-NMR and GC-MS. The assignments of ¹ H-NMR are as follows.

σ (ppm) = 1.10 ([( CH ₃ ) ₂ -CH] ₂ -N-, 12H, d, J = 7.0 Hz), 2.51 (( CH ₃ ) ₂ -N-, 6H, s), 3.18 ([ (CH ₃ ) ₂ - CH ] ₂ -N-, 2H, sep), 4.47 ( -SiH _2- , 2H, s)

According to the results of the above ¹ H-NMR and GC-MS, the obtained aminosilane compound was represented by the following formula:

And identified as diisopropylaminodimethylaminosilane.

<Method for producing silicon-containing film>
Example 3 Formation of Silicon Oxide Film Using Diisopropylamino Tertiarybutylaminosilane
A silicon substrate was placed in a vacuum device and heated to a predetermined temperature of 150 to 600C. The aminosilane composition containing diisopropylaminotertiarybutylaminosilane and the carrier gas obtained in Example 1 was injected for a predetermined time of 1 to 6 seconds, and was adsorbed on a heated silicon substrate. Next, an unadsorbed aminosilane composition and by-products were purged by introducing argon gas into the apparatus for a predetermined time of 6 to 30 seconds. Thereafter, ozone was injected as a reaction gas at a pressure of 8 Torr for 3 seconds to form an atomic layer of silicon oxide derived from diisopropylaminotert-butylaminosilane deposited on the substrate. Next, unreacted ozone gas and by-products were purged by introducing argon gas for 30 seconds. By repeating the above cycle, a silicon oxide film having a desired film thickness was obtained.

[Example 4: Formation of silicon oxide film using diisopropylaminodimethylaminosilane]
A silicon substrate was placed in a vacuum device and heated to a predetermined temperature of 150 to 600C. The aminosilane composition containing diisopropylaminodimethylaminosilane and the carrier gas obtained in Example 2 was injected for a predetermined time of 1 to 6 seconds, and was adsorbed on a heated silicon substrate. Next, an unadsorbed aminosilane composition and by-products were purged by introducing argon gas into the apparatus for a predetermined time of 6 to 30 seconds. Thereafter, ozone was injected as a reaction gas at a pressure of 8 Torr for 3 seconds to form an atomic layer of silicon oxide derived from diisopropylaminodimethylaminosilane deposited on the substrate. Next, unreacted ozone gas and by-products were purged by introducing argon gas for 30 seconds. By repeating the above cycle, a silicon oxide film having a desired film thickness was obtained.

[Example 5: Formation of silicon nitride film using diisopropylamino tert-butylaminosilane]
A silicon substrate was placed in a vacuum device and heated to a predetermined temperature of 100 to 600C. The aminosilane composition containing diisopropylaminotert-butylaminosilane and the carrier gas obtained in Example 1 was injected at a predetermined pressure of 0.05 to 100 Torr, and was adsorbed on a heated silicon substrate. Next, the aminosilane composition and by-products not adsorbed were purged into the apparatus. Thereafter, ammonia was injected as a reaction gas at a pressure of 0.05 to 100 Torr to form an atomic layer of silicon nitride derived from diisopropylamino tert-butylaminosilane deposited on the substrate. Next, unreacted ammonia gas and by-products were purged. By repeating the above cycle, a silicon nitride film having a desired film thickness was obtained.

[Example 6: Formation of silicon nitride film using diisopropylaminodimethylaminosilane]
A silicon substrate was placed in a vacuum device and heated to a predetermined temperature of 100 to 600C. The aminosilane composition containing diisopropylaminodimethylaminosilane and the carrier gas obtained in Example 2 was injected at a predetermined pressure of 0.05 to 100 Torr, and was adsorbed on a heated silicon substrate. Next, the aminosilane composition and by-products not adsorbed were purged into the apparatus. Thereafter, ammonia was injected as a reaction gas at a pressure of 0.05 to 100 Torr to form an atomic layer of silicon nitride derived from diisopropylaminodimethylaminosilane deposited on the substrate. Next, unreacted ammonia gas and by-products were purged. By repeating the above cycle, a silicon nitride film having a desired film thickness was obtained.

[Comparative Example 1: Formation of silicon-containing film using bisdiethylaminosilane]
A silicon-containing film was formed using bisdiethylaminosilane. A silicon substrate was placed in a vacuum device and heated to a predetermined temperature of 150 to 600C. An aminosilane composition containing bisdiethylaminosilane and a carrier gas was injected for a predetermined time of 1 to 6 seconds, and was adsorbed on a heated silicon substrate. Then, an unadsorbed aminosilane composition and by-products were purged into the apparatus by introducing an argon gas for a predetermined time of 6 to 90 seconds. Thereafter, ozone was injected as a reaction gas for 3 seconds to form an atomic layer of silicon oxide derived from bisdiethylaminosilane deposited on the substrate. Next, unreacted ozone gas and by-products were purged by introducing argon gas for 30 seconds. By repeating the above cycle, a silicon oxide film having a desired film thickness was obtained.

  Hereinafter, Table 1 shows a specific vapor deposition method, Table 2 shows the relationship between the supply time of the raw material aminosilane at a substrate temperature of 300 ° C. and the deposition rate, and Table 3 shows the purge time of the raw material aminosilane at a substrate temperature of 300 ° C. Table 4 shows the relationship between the substrate temperature and the deposition rate. The thickness of the formed layer was measured with an ellipsometer.

  As shown in Table 2, the deposition rates of the silicon oxide films manufactured in Examples 3 and 4 were constant for 1 second or longer, whereas the silicon oxide films of Comparative Example 1 under the same conditions were 3 seconds. The deposition rate became constant in seconds or more. In Examples 3 and 4, it was confirmed that the time until the deposition rate became constant was shorter than that in Comparative Example 1.

  As shown in Table 3, the deposition rates of the silicon oxide films manufactured in Examples 3 and 4 became constant after an argon purge time of 20 seconds or more, whereas the silicon oxide films of Comparative Example 1 had an argon purge time of The deposition rate became constant after 60 seconds or more, and in Examples 3 and 4, it was confirmed that the time until the deposition rate became constant was short.

  As shown in Table 4, the silicon oxide films manufactured in Example 3 and Example 4 had a substrate temperature of 250 to 500 ° C. in the temperature region (ALD window) where ALD film formation was possible, whereas It was confirmed that the silicon oxide film of Example 1 had a temperature of 300 to 550 ° C. Here, the ALD window is defined as a point from a point at which the deposition rate becomes maximum to a point at which the deposition rate becomes minimum.

  That is, when a silicon oxide film is manufactured by the atomic layer deposition method using the aminosilane compound of the present invention, the supply time and the purge time of the raw material can be shortened, and the film forming temperature can be lowered. Do you get it.

  By using the atomic deposition method, a silicon film such as a silicon nitride film and a silicon oxide film can be formed on a semiconductor substrate or a nanowire on which a structure having a high aspect ratio is formed, without being extremely thin and free from atomic defects. . The aminosilane compound according to the present invention is useful for an atomic deposition method for forming a film at a lower temperature and in a shorter time.

Claims (12)

The following formula:
(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
An aminosilane compound represented by the formula: The following formula:
(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
A precursor for forming a silicon-containing film represented by the formula:   The precursor according to claim 2, wherein the silicon-containing film is formed by chemical vapor deposition.   4. The precursor of claim 3, wherein said chemical vapor deposition is atomic layer deposition. The following formula:
(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
A composition for forming a silicon-containing film, comprising a compound represented by the formula:   The composition of claim 5, wherein the silicon-containing film is formed by chemical vapor deposition.   7. The composition of claim 6, wherein said chemical vapor deposition is atomic layer deposition. The following formula:
(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
A method for producing an aminosilane compound represented by
(A) a synthesis step of adding dichlorosilane and a first amine to a solvent to synthesize an aminochlorosilane compound;
(B) a filtration step of removing by-product salts by filtration;
(C) a synthesis step of adding a second amine to a filtrate to synthesize an aminosilane compound; and (d) a distillation step of isolating the aminosilane compound by distillation. The first amine in the synthesis step (a) is diisopropylamine, and the aminochlorosilane compound is represented by the following formula (1):
Wherein the ^second amine in the synthesis step (c) is R ¹ R ² NH
(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
The method according to claim 8, wherein R ¹ R ² NH is represented by the formula: In the synthesis step (a), the first amine is R ¹ R ² NH
(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
Wherein the aminochlorosilane compound is represented by the following formula (2):
(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
The method according to claim 8, wherein the intermediate (2) is represented by the formula: wherein the second amine in the synthesis step (c) is diisopropylamine. The following formula:
(Wherein, R ¹ and R ² are each independently H, methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl) Represents a substituent selected from the group, provided that both R ¹ and R ² are not an isopropyl group.
A method for producing a silicon-containing film using an aminosilane compound represented by the formula:   The method for manufacturing a silicon-containing film according to claim 11, wherein the silicon-containing film is a silicon oxide film.