JP2019532815A5 - - Google Patents
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- JP2019532815A5 JP2019532815A5 JP2019504698A JP2019504698A JP2019532815A5 JP 2019532815 A5 JP2019532815 A5 JP 2019532815A5 JP 2019504698 A JP2019504698 A JP 2019504698A JP 2019504698 A JP2019504698 A JP 2019504698A JP 2019532815 A5 JP2019532815 A5 JP 2019532815A5
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- 230000003746 surface roughness Effects 0.000 claims 6
- 210000001624 Hip Anatomy 0.000 claims 5
- 230000001678 irradiating Effects 0.000 claims 3
- 238000003754 machining Methods 0.000 claims 2
Description
一般的に、第2のポジショナ108がビーム軸を移動して、プロセススポットを位置決め(これにより第2のスキャニング範囲内で第1のスキャニング範囲をスキャン)できる帯域幅(すなわち第2の位置決め帯域幅)は、第1の位置決め帯域幅よりも狭い。一実施形態においては、第2の位置決め帯域幅は、900Hzから5kHzの範囲にある。他の実施形態においては、第1の位置決め帯域幅は、2kHzから3kHz(例えば約2.5kHz)の範囲にある。例えば、第2のポジショナ108は、2つのガルバノメータミラーコンポーネントを含むガルバノメータミラーシステムとして提供される。1つのガルバノメータミラーコンポーネントは、ワークピース102に対してX方向に沿ってビーム軸を移動するように構成されており、他のガルバノメータミラーコンポーネントは、ワークピース102に対してY方向に沿ってビーム軸を移動するように構成されている。しかしながら、他の実施形態においては、第2のポジショナ108は、回転多面鏡システムなどとして提供されてもよい。このように、第2のポジショナ108及び第1のポジショナ106の特定の構成によっては、第2の位置決め帯域幅が第1の位置決め帯域幅以上であってもよいことは理解されよう。
In general, a bandwidth (ie, a second positioning bandwidth) that allows the second positioner 108 to move the beam axis to position the process spot (and thereby scan the first scanning range within the second scanning range). ) Is narrower than the first positioning bandwidth. In one embodiment, the second positioning bandwidth is in the range 900Hz to 5kHz. In other embodiments, the first positioning bandwidth is in the range of 2kHz to 3kHz (eg, about 2.5kHz). For example, the second positioner 108 is provided as a galvanometer mirror system that includes two galvanometer mirror components. One galvanometer mirror component is configured to move the beam axis along the X direction relative to the workpiece 102, and the other galvanometer mirror component is configured to move the beam axis along the Y direction relative to the workpiece 102. Is configured to move. However, in other embodiments, the second positioner 108 may be provided as a rotating polygon mirror system or the like. Thus, it will be appreciated that the second positioning bandwidth may be greater than or equal to the first positioning bandwidth, depending on the particular configuration of the second positioner 108 and the first positioner 106.
Claims (17)
第1の面と、前記第1の面と反対側の第2の面とを有するワークピースと交差するビーム軸に沿って前記第1のレーザパルスビームを照射し、
連続的に照射されるレーザパルスが前記ワークピースに非ゼロバイトサイズで当たって前記ワークピースの前記第1の面にフィーチャを形成するように前記ビーム軸を加工軌跡に沿ってスキャンし、前記フィーチャは、1.0μm未満の平均表面粗さ(Ra)を有する加工済ワークピース表面を有するものとして特徴付けられる、
方法。 Producing a first laser pulse beam having a pulse duration of less than 200 ps, a spot size and a pulse energy at a pulse repetition rate higher than 500 kHz,
Irradiating the first laser pulse beam along a beam axis that intersects a workpiece having a first surface and a second surface opposite the first surface ,
Scanning the beam axis along a machining trajectory such that a continuously emitted laser pulse impinges on the workpiece with a non-zero bite size to form a feature on the first surface of the workpiece. Is characterized as having a processed workpiece surface with an average surface roughness (Ra) of less than 1.0 μm,
Method.
第2のレーザパルスビームを生成し、
前記第2のレーザパルスビーム中のレーザパルスを集束させてビームウェストを生成し、
前記ビームウェストが前記ワークピース内又は前記ワークピースの前記第2の面上に配置されるように、前記集束させた第2のレーザパルスビームを前記加工済ワークピース表面と交差するビーム軸に沿って照射し、
前記ビームウェストで前記ワークピースを加工する、
請求項1から13のいずれかの方法。 further,
Generate a second laser pulse beam,
Focusing the laser pulse in the second laser pulse beam to produce a beam waist,
Along the beam axis intersecting the focused second laser pulse beam with the machined workpiece surface such that the beam waist is located within the workpiece or on the second surface of the workpiece. Irradiate
Processing the workpiece with the beam waist,
The method according to any one of claims 1 to 13.
連続的に照射されるレーザパルスが非ゼロバイトサイズで前記ワークピースに当たって前記ワークピースの前記第1の面にフィーチャが形成されるように前記ビーム軸を加工軌跡に沿ってスキャンし、前記フィーチャは、加工済ワークピース表面を有するものとして特徴付けられ、 Scanning the beam axis along a machining trajectory such that a continuously radiated laser pulse hits the workpiece at a non-zero bite size to form a feature on the first surface of the workpiece, the feature , Characterized as having a machined workpiece surface,
前記加工済ワークピース表面に交差するビーム軸に沿って第2のレーザパルスビームを照射し、前記第2のレーザパルスビーム中のレーザパルスを集束させて前記ワークピース内に又は前記ワークピースの前記第2の面上にビームウェストを形成し、 Irradiating a second laser pulse beam along a beam axis that intersects the machined workpiece surface to focus the laser pulses in the second laser pulse beam into or within the workpiece. Forming a beam waist on the second surface,
前記ビームウェストで前記ワークピースを加工する、 Processing the workpiece with the beam waist,
方法。Method.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662368053P | 2016-07-28 | 2016-07-28 | |
US62/368,053 | 2016-07-28 | ||
PCT/US2017/043229 WO2018022441A1 (en) | 2016-07-28 | 2017-07-21 | Laser processing apparatus and methods of laser-processing workpieces |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019532815A JP2019532815A (en) | 2019-11-14 |
JP2019532815A5 true JP2019532815A5 (en) | 2020-08-06 |
Family
ID=61016598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019504698A Pending JP2019532815A (en) | 2016-07-28 | 2017-07-21 | Laser processing apparatus and method of laser processing workpiece |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP3490750A4 (en) |
JP (1) | JP2019532815A (en) |
KR (1) | KR20190025721A (en) |
CN (1) | CN109862991A (en) |
TW (1) | TW201803674A (en) |
WO (1) | WO2018022441A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019183237A1 (en) * | 2018-03-22 | 2019-09-26 | Applied Materials, Inc. | Laser polishing ceramic surfaces of processing components to be used in the manufacturing of semiconductor devices |
JP7336465B2 (en) * | 2018-05-08 | 2023-08-31 | ラム リサーチ コーポレーション | Atomic Layer Etching and Atomic Layer Deposition Processing Systems Including Telecentric Lenses, Optical Beam Folding Assemblies, or Lens Circuits with Polygon Scanners |
KR20240050452A (en) | 2018-06-05 | 2024-04-18 | 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 | Laser-processing apparatus, methods of operating the same, and methods of processing workpieces using the same |
US20220134480A1 (en) * | 2019-02-19 | 2022-05-05 | Asml Holding N.V. | Laser roughening: engineering the roughness of the burl top |
CN113977099B (en) * | 2021-12-07 | 2023-12-19 | 北京卫星制造厂有限公司 | Ultrafast laser milling method for fiber composite material |
TWI826980B (en) * | 2022-03-25 | 2023-12-21 | 國立陽明交通大學 | Method for fabricating an liquid-crystal-aligning electrode and method for fabricating a liquid crystal cell using the same |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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CA2009514C (en) * | 1990-02-07 | 1995-04-25 | Mahmud U. Islam | Laser rough and finish machining of hard materials |
JP2005116844A (en) * | 2003-10-09 | 2005-04-28 | Matsushita Electric Ind Co Ltd | Method for manufacturing semiconductor device |
US20060000814A1 (en) * | 2004-06-30 | 2006-01-05 | Bo Gu | Laser-based method and system for processing targeted surface material and article produced thereby |
US20060039419A1 (en) * | 2004-08-16 | 2006-02-23 | Tan Deshi | Method and apparatus for laser trimming of resistors using ultrafast laser pulse from ultrafast laser oscillator operating in picosecond and femtosecond pulse widths |
JP2007021527A (en) * | 2005-07-15 | 2007-02-01 | Matsushita Electric Ind Co Ltd | Laser beam machining method |
US9138913B2 (en) * | 2005-09-08 | 2015-09-22 | Imra America, Inc. | Transparent material processing with an ultrashort pulse laser |
FI20060177L (en) * | 2006-02-23 | 2007-08-24 | Picodeon Ltd Oy | The method produces good quality surfaces and a product with a good quality surface |
CN105583526B (en) * | 2008-03-21 | 2018-08-17 | Imra美国公司 | Material processing method based on laser and system |
GB2459669A (en) * | 2008-04-30 | 2009-11-04 | Xsil Technology Ltd | Dielectric layer pulsed laser scribing and metal layer and semiconductor wafer dicing |
US20110287217A1 (en) * | 2010-05-21 | 2011-11-24 | Prantik Mazumder | Superoleophobic substrates and methods of forming same |
JP2012156168A (en) * | 2011-01-21 | 2012-08-16 | Disco Abrasive Syst Ltd | Division method |
US8685599B1 (en) * | 2011-02-24 | 2014-04-01 | Sandia Corporation | Method of intrinsic marking |
US10357850B2 (en) * | 2012-09-24 | 2019-07-23 | Electro Scientific Industries, Inc. | Method and apparatus for machining a workpiece |
KR20160093593A (en) * | 2013-12-05 | 2016-08-08 | 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 | Method and apparatus for internally marking a substrate having a rough surface |
US9850160B2 (en) * | 2013-12-17 | 2017-12-26 | Corning Incorporated | Laser cutting of display glass compositions |
CN105108343B (en) * | 2015-09-22 | 2017-08-22 | 武汉金顿激光科技有限公司 | A kind of process of surface treatment of container soldering joint |
CN105468873B (en) * | 2015-12-24 | 2018-08-14 | 中北大学 | The surface-smoothing emulation mode of silicon substrate laser optical waveguide |
-
2017
- 2017-07-21 EP EP17835014.6A patent/EP3490750A4/en not_active Withdrawn
- 2017-07-21 WO PCT/US2017/043229 patent/WO2018022441A1/en unknown
- 2017-07-21 CN CN201780054282.5A patent/CN109862991A/en not_active Withdrawn
- 2017-07-21 KR KR1020197004389A patent/KR20190025721A/en not_active Application Discontinuation
- 2017-07-21 JP JP2019504698A patent/JP2019532815A/en active Pending
- 2017-07-27 TW TW106125299A patent/TW201803674A/en unknown
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