JP2019532298A - Thermal convection type acceleration sensor and manufacturing method thereof - Google Patents

Abstract

It is divided into a lower layer part and an upper layer part, and the measurement performance is improved by forming a structure that measures uniaxial or biaxial acceleration in the lower layer part and a structure that measures triaxial acceleration in the upper layer part. A thermal convection type acceleration sensor is provided. A thermal convection type acceleration sensor according to an embodiment of the present invention includes a lower layer portion in which a heater is installed in the center, a lower layer portion, a first temperature sensor formed on one axis around the heater, and a lower layer portion A second temperature sensor formed on two axes around the heater, an upper layer part coupled to the upper surface of the lower layer part, and an internal space formed toward the lower layer part, and a part of which is inside the upper layer part And a third temperature sensor formed in the upper layer portion so as to be exposed to the space. [Selection] Figure 3

Description

  The present invention relates to a thermal convection type acceleration sensor and a method for manufacturing the same, and more specifically, is divided into a lower layer portion and an upper layer portion, and a configuration for measuring uniaxial or biaxial acceleration is formed in the lower layer portion, and the upper layer portion is formed. The present invention relates to a thermal convection type acceleration sensor whose measurement performance is improved by forming a configuration for measuring triaxial acceleration, and a manufacturing method thereof.

  In recent years, research on MEMS (Micro Electro Mechanical Systems) sensors that reduce the size of various sensors using semiconductor manufacturing technology has been actively promoted.

A MEMS sensor refers to a sensor made by applying a semiconductor microfabrication technology. The MEMS sensor is characterized in that it has fewer defects than conventional sensors, is easy to handle, and has excellent potential in terms of characteristics. Since it is possible to make a single chip with an electronic circuit that was difficult to realize with a conventional sensor, the sensor circuit and the electronic circuit that processes the signal detected from the sensor element are integrated on one chip. By shortening, mixing of noise can be prevented.

A typical example of the MEMS sensor is a micro acceleration sensor, and a method using a change in capacitance, a method using a piezoresistive element, or the like is used.

  Among them, the method using the resistance change of the temperature sensor due to thermal convection has increased in usage because it has a simple structure and is easy to produce, but the conventional thermal convection type acceleration sensor is Although it is easy to measure the biaxial acceleration, the triaxial acceleration measurement including the vertical axis with respect to the plane has a problem that the sensitivity is lowered.

  In Patent Document 1, a first heating point, a second heating point, a third heating point, a fourth heating point, and a temperature of each of the heating points that generate heat due to an applied current are measured. In addition, a first thermocouple, a second thermocouple, a third thermocouple, and a fourth thermocouple having a thermocouple junction in contact with each of the heating points, the first heating point, A first substrate provided with a first cavity through which fluid can pass under the second exothermic point, the third exothermic point, and the fourth exothermic point; and in parallel with the first substrate A fifth thermoelectric point that is disposed and has a thermocouple junction in contact with the fifth exothermic point to measure a fifth exothermic point that generates heat by the applied current and the temperature of the fifth exothermic point. A pair and a second substrate provided with a second cavity in which a fluid can move below the fifth heating point; The first heat generating point and the second heat generating point are arranged to be separated from each other along the first axial direction, and the third heat generating point and the fourth heat generating point are the first heat generating point and the first heat generating point, respectively. The fifth heat generation point and the first heat generation point intersect the first substrate and the second substrate, respectively, along a second axis direction that intersects the axial direction of the first substrate. Are arranged so as to be separated from each other along the third axial direction, and using the temperature difference between the first and second heating points, the acceleration in the first axial direction is Using the temperature difference between the third and fourth heating points, the acceleration in the second axial direction and between the fifth and the first heating points are used. A three-axis MEMS acceleration sensor that measures acceleration in the third axis direction using the temperature difference is disclosed.

Korea Registered Patent No. 10-0823165

  In order to solve the above-described problems, the present invention divides an acceleration sensor into a lower layer portion and an upper layer portion, and forms a configuration for measuring uniaxial or biaxial acceleration in the lower layer portion, and 3 in the upper layer portion. An object of the present invention is to provide an acceleration sensor with improved measurement performance by forming a configuration for measuring the acceleration of the shaft.

  The technical problem to be solved by the present invention is not limited to the above-mentioned technical problem, and other technical problems not mentioned are based on the following general knowledge in the technical field to which the present invention belongs. Clearly understood by those who have

  In order to achieve the above object, the present invention includes a lower layer portion in which a heater is installed in the center, and a first temperature sensor formed on one axis around the heater in the lower layer portion, In the lower layer portion, a second temperature sensor formed on two axes around the heater, an upper layer portion coupled to the upper surface of the lower layer portion and having an internal space formed toward the lower layer portion, and And a third temperature sensor formed in the upper layer part such that a part thereof is exposed to the internal space of the upper layer part 100.

In an embodiment of the present invention, the third temperature sensor is connected to an upper layer portion of a third temperature sensor formed on an inner surface of the upper layer portion, and an upper layer portion of the third temperature sensor, You may provide the lower layer part site | part of the 3rd temperature sensor formed in the upper surface of the said lower layer part.
In an embodiment of the present invention, the heater may include metal wiring that is densely arranged in a bent shape at the center of the upper surface of the lower layer portion.
In an embodiment of the present invention, a part of the first temperature sensor may be formed apart from the heater so as to be in contact with the gas in the internal space of the upper layer portion.
In an embodiment of the present invention, a part of the second temperature sensor may be formed apart from the heater so as to be in contact with the gas in the internal space of the upper layer part.

  In an embodiment of the present invention, the lower layer portion is formed of a semiconductor substrate and an insulating material on the upper surface of the semiconductor substrate, and the heater, the first temperature sensor, and the second temperature sensor are formed thereon. And a second insulating film formed of an insulating material on a lower surface of the semiconductor substrate.

  In an embodiment of the present invention, the lower layer part is formed of a semiconductor substrate having a groove in the central region of the upper surface, and an insulating material on the upper surface of the semiconductor substrate excluding the groove, and both ends of the heater and the first A first insulating film formed on both ends of the temperature sensor and both ends of the second temperature sensor; a second insulating film formed of an insulating material on a lower surface of the semiconductor substrate; May be provided.

  In order to achieve the above object, the present invention includes a lower layer portion in which a heater is installed in the center, and a first temperature sensor formed on one axis around the heater in the lower layer portion, In the lower layer portion, a second temperature sensor formed on two axes around the heater, an upper layer portion coupled to the upper surface of the lower layer portion and having an internal space formed toward the lower layer portion, and A third temperature sensor formed in the upper layer part so that a part is exposed in the internal space of the upper layer part, and a hole is formed in the internal space of the upper layer part from the upper surface of the upper layer part .

  In an embodiment of the present invention, the third temperature sensor includes a pull-in portion of the third temperature sensor exposed to the internal space of the upper layer portion while filling the hole, and a pull-in portion of the third temperature sensor. And a third temperature sensor connecting portion formed on the upper surface of the upper layer portion.

  In an embodiment of the present invention, the lower layer portion is formed of a semiconductor substrate and an insulating material on the upper surface of the semiconductor substrate, and the heater, the first temperature sensor, and the second temperature sensor are formed thereon. And a second insulating film formed of an insulating material on a lower surface of the semiconductor substrate.

  In an embodiment of the present invention, the lower layer part is formed of a semiconductor substrate having a groove in a central region of the upper surface, and an insulating material on the upper surface of the semiconductor substrate excluding the groove, and the heater and the first temperature sensor And the second temperature sensor may include a first insulating film formed thereon, and a second insulating film formed of an insulating material on a lower surface of the semiconductor substrate.

  In order to achieve the above object, the present invention includes the steps of i) forming an upper insulating film on the lower surface of the upper layer, and ii) etching the lower surface of the upper layer to form an internal space. Iii) depositing a deposition material on the inner surface of the upper layer portion to form an upper layer portion of a third temperature sensor; and iv) forming a thin film of the deposition material on the upper surface of the lower layer portion; v) Patterning the thin film of the vapor deposition material in the lower layer portion to form lower layer portions of the heater, the first temperature sensor, the second temperature sensor, and the third temperature sensor, and forming a groove in the lower layer portion And vi) combining the upper layer portion and the lower layer portion.

  In order to achieve the above object, the present invention includes the steps of i) forming an upper insulating film on the lower surface of the upper layer, and ii) etching the lower surface of the upper layer to form an internal space. And iii) depositing a deposition material, and forming the end of the lead-in part of the third temperature sensor on the upper surface of the internal space of the upper layer part; and iv) forming a hole on the upper surface of the upper layer part; And v) depositing the vapor deposition material on the upper surface of the upper layer portion to form a third temperature sensor lead-in portion including the end of the third temperature sensor lead-in portion while filling the hole formed in the upper layer portion. Forming a connection portion of the third temperature sensor with the vapor deposition material, vi) forming a thin film of the vapor deposition material on the upper surface of the lower layer portion, and vii) forming a thin film of the vapor deposition material on the lower layer portion. Pattern and heater Forming a lower layer portion of the first temperature sensor, the second temperature sensor, and the third temperature sensor, and forming a groove in the lower layer portion; and viii) combining the upper layer portion and the lower layer portion. Steps.

In an embodiment of the present invention, the upper layer portion and the lower layer portion may be joined by one or more substances selected from the group consisting of epoxy, silicone, and a polymer compound.

In an embodiment of the present invention, the deposition material may be formed of one or more metals selected from the group consisting of metals, metal nanowires, and carbon nanomaterials.

In the present invention having the above-described configuration, the temperature change is detected by each temperature sensor in the lower layer part and the temperature sensor in the upper layer part by the thermal convection in the internal space formed in the upper layer part, thereby measuring the acceleration. Therefore, there is an effect that the measurement performance of the acceleration in the axial direction perpendicular to the upper surface of the lower layer portion is improved.
The present invention has a simple structure, can be easily reduced in size, and can shorten the manufacturing process, thereby improving the productivity.

  The effects of the present invention are not limited to the above effects, and include all effects that can be inferred from the detailed description of the present invention or the structure of the invention described in the claims.

Perspective view of a conventional thermal convection type acceleration sensor The perspective view of the thermal convection type acceleration sensor which concerns on one Embodiment of this invention. 1 is an exploded perspective view of a thermal convection type acceleration sensor according to an embodiment of the present invention. The perspective view of the lower layer part in which the groove | channel concerning other embodiment of this invention was formed Sectional drawing of the upper layer part with which the temperature sensor was provided in the inner surface which concerns on one Embodiment of this invention Sectional drawing of the lower layer part in which the groove | channel which concerns on one Embodiment of this invention is not formed The perspective view of the lower layer part in which the groove | channel concerning other embodiment of this invention was formed An exploded perspective view of a thermal convection type acceleration sensor according to another embodiment of the present invention. Sectional drawing of the upper layer part by which the temperature sensor was provided in the outer surface which concerns on other embodiment of this invention. Output characteristic graph of thermal convection type acceleration sensor of the present invention

  Hereinafter, the present invention will be described with reference to the accompanying drawings. However, the present invention can be realized in various different forms and is not limited to the embodiments described below. In the drawings, parts not related to the description are omitted to clearly describe the present invention, and like parts are denoted by like reference numerals throughout the specification.

  Throughout the specification, when a part is “coupled (connected, contacted, coupled)” with another part, it is not only “directly coupled”, but also with another member in between. That are “indirectly linked”. Further, when “including” a certain component is included in a certain part, it does not exclude other components unless otherwise specified, and means that other components may be further provided.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular includes the plural unless the context clearly dictates otherwise. The terms “including”, “having” and the like in the present invention are intended to indicate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, It does not pre-exclude the presence or addition of one or more other features, numbers, steps, actions, components, parts or combinations thereof.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a perspective view of a conventional thermal convection type acceleration sensor.

As shown in FIG. 1, the acceleration sensor 1 according to the prior art is provided with a uniaxial temperature sensor 10, a biaxial temperature sensor 20, a triaxial temperature sensor 30, and a heater 40 on a substrate 50 to perform thermal convection. The acceleration sensor having such a configuration has a problem that the detection performance with respect to one axis and two axes is guaranteed, but the detection performance with respect to three axes is remarkably deteriorated.
(Here, 1 axis and 2 axes may mean axes that are horizontal to the plane on the substrate, and 3 axes may mean axes that are perpendicular to the 1 axis and 2 axes.)

  Hereinafter, a thermal convection type acceleration sensor including the upper layer portion 100 according to an embodiment will be described (the upper layer portion 100 according to the embodiment means the upper layer portion 100 in which the third temperature sensor 110 is formed on the inner surface. You may).

  2 is a perspective view of a thermal convection type acceleration sensor according to an embodiment of the present invention, FIG. 3 is an exploded perspective view of a thermal convection type acceleration sensor according to an embodiment of the present invention, and FIG. FIG. 5 is a perspective view of a lower layer part 200 in which a groove 260 according to another embodiment of the present invention is formed.

  (Here, FIG. 3 shows the lower layer portion 200 in which the groove 260 is formed, and FIG. 4 shows the lower layer portion 200 in which the groove 260 is not formed. This is the upper layer portion. 100 may indicate that it can be coupled to the lower layer portion 200 in which the groove 260 is formed or the lower layer portion 200 in which the groove 260 is not formed.)

  As shown in FIGS. 2 to 3, the thermal convection type acceleration sensor of the present invention is formed on one axis centering on the heater 230 in the lower layer part 200 in which the heater 230 is installed in the center and the lower layer part 200. In the first temperature sensor 210 and the lower layer part 200, the second temperature sensor 220 formed on two axes around the heater 230 and the upper surface of the lower layer part 200 are coupled to the upper part of the lower layer part 200. The upper layer part 100 in which the internal space is formed and the third temperature sensor 110 formed in the upper layer part 100 so that a part thereof is exposed to the internal space of the upper layer part 100 may be included.

  Here, the 1 axis and 2 axes may mean axes that are horizontal with respect to the upper surface of the lower layer part 200, and the 3 axes may mean axes that are perpendicular to the 1 axis and 2 axes. As a specific embodiment, one axis may be an x axis, two axes may be a y axis, and three axes may be a z axis.

  As shown in FIG. 4, the first temperature sensor 210 is separated from the heater 230 in one axial direction, the second temperature sensor 220 is separated from the heater 230 in two axial directions, and the third temperature sensor 110 is three axial. The heater 230 may be spaced apart in the direction. At this time, the first temperature sensors 210 may be formed as a pair, and the first temperature sensors 210 may be installed so as to face each other. Similarly, a pair of second temperature sensors 220 may be formed, and the second temperature sensors 220 may be installed so as to face each other.

  With the above-described configuration, the first temperature sensor 210, the second temperature sensor 220, or the third temperature sensor 110 has the temperature change of the gas heated by the heater 230, specifically, the inside of the upper layer portion 100. The temperature change which changes with the inclination of the gas in the space is detected, and the thermal convection type acceleration sensor of the present invention can measure the acceleration.

  FIG. 5 is a cross-sectional view of the upper layer part 100 with the temperature sensor on the inner surface according to the embodiment of the present invention. FIG. 5 is a cross-sectional view taken along the line AA ′ in the upper layer portion 100 of FIG. 3.

As shown in FIG. 5, the third temperature sensor 110 is connected to the upper layer portion 111 of the third temperature sensor formed on the inner surface of the upper layer portion 100 and the upper layer portion 111 of the third temperature sensor. The third temperature sensor lower layer portion 112 formed on the upper surface of the lower layer portion 200 may be provided.
The inner side surface portion of the upper layer portion 100 provided with the upper layer portion portion 111 of the third temperature sensor may be formed to be inclined from the lower surface of the upper layer portion 100 to the upper surface of the upper layer portion 100.

  The upper layer portion 111 of the third temperature sensor may be formed to be bent so that both ends have corners, one end being located in the upper direction of the internal space and the other end being the third You may locate in the lower surface of the upper layer part 100 so that the lower layer part site | part 112 of a temperature sensor may be contacted.

The lower temperature part 112 of the third temperature sensor is formed at a position where it can come into contact with the upper temperature part 111 of the third temperature sensor on the upper surface of the lower temperature part 200. Although it may be formed at the apex, it is not necessarily limited to this.
Similarly to the first temperature sensor 210 or the second temperature sensor 220, the third temperature sensor 110 may be formed in a pair and may be formed in directions facing each other.

With the above-described structure, when the gas flowing in the inner space of the upper layer part 100 moves in the three-axis direction, the third temperature sensor 110 that comes into contact with the gas in the inner space of the upper layer part 100 is easily heated. Changes can be detected.
The heater 230 may include metal wiring that is densely arranged in a bent shape at the center of the upper surface of the lower layer portion 200.

The heater 230 can perform the function of generating heat and heating the gas in the internal space of the upper layer part 100. For this reason, the metal wiring is bent and formed so as to be concentrated in the center of the upper surface of the lower layer part 200. May be. Thereby, intensive heating can be performed on the central portion of the internal space.

The heater 230 may be formed of one or more metals selected from the group consisting of platinum (Pt), nickel (Ni), and palladium (Pd).
Both ends of the heater 230 are connected to a power supply lead plate of an external substrate, and electricity can be supplied from the outside to generate heat.

  A part of the first temperature sensor 210 may be formed apart from the heater 230 so as to be in contact with the gas in the internal space of the upper layer part 100. Further, a part of the second temperature sensor 220 may be formed apart from the heater 230 so as to be in contact with the gas in the internal space of the upper layer part 100.

  Since both ends of the first temperature sensor 210, which are located in the bonding layer between the upper layer portion 100 and the lower layer portion 200, cannot come into contact with the gas, a part of the first temperature sensor 210 has an internal space. It may be formed so as to be exposed toward. The both ends of the first temperature sensor 210 have a portion exposed to the outside so as to be connected to the external substrate without being completely drawn into the bonding layer between the upper layer portion 100 and the lower layer portion 200. Also good. Thereby, the size of the lower layer part 200 may be larger than the upper layer part 100.

  The second temperature sensor 220 may be formed in the same shape as the first temperature sensor 210, and the second temperature sensor excluding both ends of the second temperature sensor 220 and both ends of the second temperature sensor 220. Items relating to a part of 220 may be the same as items relating to the first temperature sensor 210.

  FIG. 6 is a cross-sectional view of the lower layer part 200 in which the groove 260 according to an embodiment of the present invention is not formed. FIG. 6 is a cross-sectional view taken along the line CC ′ in the lower layer portion 200 of FIG.

As shown in FIG. 6, as an embodiment of the lower layer part 200, the lower layer part 200 is formed of an insulating material on the upper surface of the semiconductor substrate 240 and the semiconductor substrate 240, and includes the heater 230, the first temperature sensor 210, and the second. The temperature sensor 220 may include a first insulating film 251 formed thereon and a second insulating film 252 formed of an insulating material on the lower surface of the semiconductor substrate 240.

The semiconductor substrate 240 may be formed of silicon (Si).

The first insulating film 251 may function to prevent the first temperature sensor 210 or the second temperature sensor 220 from being affected by the temperature of the semiconductor substrate 240.
The second insulating film 252 may function to prevent the semiconductor substrate 240 from being affected by the temperature of the external substrate.

The insulating material may be formed of silicon dioxide (SiO 2), glass (Glass), or SOI (Silicon On Insulator).

  FIG. 7 is a perspective view of the lower layer part 200 in which the groove 260 according to another embodiment of the present invention is formed. FIG. 7 is a cross-sectional view taken along the line DD ′ in the lower layer portion 200 of FIG.

As shown in FIG. 7, as another embodiment of the lower layer part 200, the lower layer part 200 includes a semiconductor substrate 240 having a groove 260 in the central region of the upper surface, and an insulating material on the upper surface of the semiconductor substrate 240 excluding the groove 260. The first insulating film 251 formed on both ends of the heater 230, both ends of the first temperature sensor 210, and both ends of the second temperature sensor 220 are formed on the lower surface of the semiconductor substrate 240. And a second insulating film 252 formed using an insulating material.
The semiconductor substrate 240 may be formed of silicon (Si).

The first insulating film 251 may function to prevent the first temperature sensor 210 or the second temperature sensor 220 from being affected by the temperature of the semiconductor substrate 240. Further, a groove 260 is provided in the central region of the upper surface of the lower layer part 200, and a part of the heater 230 where metal wirings are densely packed, a part of the first temperature sensor 210, and one of the second temperature sensors 220. Are exposed to the space by the groove 260, the influence of the temperature of the semiconductor substrate 240 is minimized, and the gas in the space by the groove 260 is also heated to form convection, whereby acceleration due to temperature detection Measurement performance can be improved.

The second insulating film 252 may function to prevent the semiconductor substrate 240 from being affected by the temperature of the external substrate.
The insulating material may be formed of silicon dioxide (SiO 2), glass (Glass), or SOI (Silicon On Insulator).

  Hereinafter, a thermal convection type acceleration sensor including the upper layer part 100 of another embodiment will be described (here, the third temperature sensor 110 is formed on the outer surface of the upper layer part 100 of the other embodiment). It may mean the upper layer part 100).

  FIG. 8 is an exploded perspective view of a thermal convection type acceleration sensor according to another embodiment of the present invention, and FIG. 9 is an upper layer portion 100 provided with a temperature sensor on the outer surface according to another embodiment of the present invention. FIG. FIG. 9 is a cross-sectional view taken along line BB ′ in the upper layer portion 100 of FIG.

  Here, FIG. 8 shows the lower layer part 200 in which the groove 260 is formed. However, as shown in FIGS. 3 and 4, the upper layer part 100 having the temperature sensor on the outer surface is formed in the groove 260. It may be combined with the lower layer part 200 in which is not formed or the lower layer part 200 in which the groove 260 is formed, and this may be a matter shown in the drawings in order to show various embodiments.

  As shown in FIGS. 8 and 9, the thermal convection type acceleration sensor of the present invention is formed on one axis centering on the heater 230 in the lower layer part 200 in which the heater 230 is installed in the center and the lower layer part 200. In the first temperature sensor 210 and the lower layer part 200, the second temperature sensor 220 formed on two axes around the heater 230 and the upper surface of the lower layer part 200 are coupled to the upper part of the lower layer part 200. An upper layer portion 100 in which an internal space is formed and a hole is formed in the internal space from the upper surface, and a third temperature sensor 110 formed in the upper layer portion 100 so that a part thereof is exposed to the internal space of the upper layer portion 100. And may be included.

  As shown in FIG. 9, the third temperature sensor 110 includes a pull-in portion 113 of the third temperature sensor exposed to the internal space of the upper layer portion 100 while filling the hole, and a pull-in portion 113 of the third temperature sensor. And a third temperature sensor connecting portion 114 that is connected and formed on the upper surface of the upper layer portion 100.

  With the above-described configuration, the lead-in part 113 of the third temperature sensor can come into contact with the gas in the internal space of the upper layer part 100, whereby the lead-in part 113 of the third temperature sensor is in contact with the gas in the upper layer part 100. The thermal convection of the gas in the internal space can be detected.

And since the connection part 114 of the 3rd temperature sensor connected to the drawing-in part 113 of the 3rd temperature sensor is exposed to an outer surface, and it can connect with an external substrate, the 3rd temperature sensor 110 whole is the upper layer part 100. May be formed.
Similarly to the first temperature sensor 210 or the second temperature sensor 220, the third temperature sensor 110 may be formed in a pair and may be formed in directions facing each other.

  With the above-described structure, when the gas flowing in the inner space of the upper layer part 100 moves in the three-axis direction, the third temperature sensor 110 that comes into contact with the gas in the inner space of the upper layer part 100 is easily heated. Changes can be detected.

The lower layer portion 200 is formed of a semiconductor substrate 240 and an insulating material on the upper surface of the semiconductor substrate 240, and a first insulation on which the heater 230, the first temperature sensor 210, and the second temperature sensor 220 are formed. A film 251 and a second insulating film 252 formed of an insulating material on the lower surface of the semiconductor substrate 240 may be provided.
The semiconductor substrate 240 may be formed of silicon (Si).

The first insulating film 251 may function to prevent the first temperature sensor 210 or the second temperature sensor 220 from being affected by the temperature of the semiconductor substrate 240.
The second insulating film 252 may function to prevent the semiconductor substrate 240 from being affected by the temperature of the external substrate.
The insulating material may be formed of silicon dioxide (SiO 2), glass (Glass), or SOI (Silicon On Insulator).

The lower layer part 200 is formed of an insulating material on the upper surface of the semiconductor substrate 240 except for the groove 260 in the central region of the upper surface, and the heater 230, the first temperature sensor 210, and the second temperature. The sensor 220 may include a first insulating film 251 formed thereon, and a second insulating film 252 formed of an insulating material on the lower surface of the semiconductor substrate 240.
The semiconductor substrate 240 may be formed of silicon (Si).

The first insulating film 251 may function to prevent the first temperature sensor 210 or the second temperature sensor 220 from being affected by the temperature of the semiconductor substrate 240. Further, a groove 260 is provided in the central region of the upper surface of the lower layer part 200, and a part of the heater 230 where metal wirings are densely packed, a part of the first temperature sensor 210, and one of the second temperature sensors 220. Are exposed to the space by the groove 260, the influence of the temperature of the semiconductor substrate 240 is minimized, and the gas in the space by the groove 260 is also heated to form convection, whereby acceleration due to temperature detection Measurement performance can be improved.

The second insulating film 252 may function to prevent the semiconductor substrate 240 from being affected by the temperature of the external substrate.
The insulating material may be formed of silicon dioxide (SiO 2), glass (Glass), or SOI (Silicon On Insulator).

In the thermal convection type acceleration sensor including the upper layer part 100 of the other embodiment, the remaining items are the same as those of the thermal convection type acceleration sensor including the upper layer part 100 of the one embodiment described above. May be.

Hereinafter, the manufacturing method of the thermal convection type acceleration sensor including the upper layer part 100 of one Embodiment is demonstrated.
(Here, the lower layer portion 200 may be manufactured with a groove 260 formed therein.)
In the first step, the upper insulating layer 120 may be formed on the lower surface of the upper layer 100.

Here, the upper layer portion 100 may be formed of a silicon wafer, and the upper layer insulating film 120 may be formed of silicon dioxide (SiO 2), glass (Glass), or SOI (Silicon On Insulator). The upper layer insulating film 120 may be formed by vapor deposition.

In the second step, an inner space may be formed by etching the lower surface of the upper layer part 100.

Etching may be performed by a wet etching method or a laser etching method to form an internal space of the upper layer portion 100. Only a part of the upper insulating film 120 may remain by etching.

In the third step, a vapor deposition material may be deposited on the inner surface of the upper layer portion 100 to form the upper layer portion 111 of the third temperature sensor.
At this time, the upper layer portion 111 of the third temperature sensor may be formed by a shadow mask method.

In the fourth step, a thin film of a vapor deposition material may be formed on the upper surface of the lower layer part 200.
At that time, a deposition material may be deposited on the top surface of the first insulating film 251 to form a thin film of the deposition material.

  In the fifth step, the thin film of the vapor deposition material is patterned in the lower layer portion 200 to form the heater 230, the first temperature sensor 210, the second temperature sensor 220, and the lower temperature portion 112 of the third temperature sensor, A groove 260 may be formed in the lower layer part 200.

Here, the thin film of the vapor deposition material is patterned on the first insulating film 251 of the lower layer part 200, and the lower layer part of the heater 230, the first temperature sensor 210, the second temperature sensor 220, and the third temperature sensor. The part 112 may be formed. Alternatively, the groove 260 may be formed in the lower layer portion 200 by performing etching using the heater 230, the first temperature sensor 210, and the second temperature sensor 220 as a mask. At that time, the etching method may be a wet etching method or a dry etching method.

In the sixth step, the upper layer part 100 and the lower layer part 200 may be combined.
At that time, the upper layer portion 111 of the third temperature sensor and the lower layer portion 112 of the third temperature sensor may be joined.

Hereinafter, the manufacturing method of the thermal convection type acceleration sensor including the upper layer part 100 of other embodiment is demonstrated.
(Here, the lower layer portion 200 may be manufactured with a groove 260 formed therein.)
In the first step, the upper insulating layer 120 may be formed on the lower surface of the upper layer 100.

Here, the upper layer portion 100 may be formed of a silicon wafer, and the upper layer insulating film 120 may be formed of silicon dioxide (SiO 2), glass (Glass), or SOI (Silicon On Insulator). The upper layer insulating film 120 may be formed by vapor deposition.

In the second step, an inner space may be formed by etching the lower surface of the upper layer part 100.

Etching may be performed by a wet etching method or a laser etching method to form an internal space of the upper layer portion 100. Only a part of the upper insulating film 120 may remain by etching.

In the third step, the end of the pull-in portion 113 of the third temperature sensor may be formed on the upper surface of the internal space of the upper layer portion 100.

At this time, a deposition material is deposited on the upper surface of the inner space of the upper layer portion 100 by a shadow mask method with respect to the upper surface of the inner space of the upper layer portion 100, and the end of the lead-in portion 113 of the third temperature sensor. May be formed.

In the fourth step, a hole may be formed on the upper surface of the upper layer part 100.
Here, the hole may be formed by a precision machining drill or a laser.

In the fifth step, the vapor deposition material is vapor-deposited on the upper surface of the upper layer portion 100, and the third temperature sensor lead-in portion including the end of the third temperature sensor lead-in portion 113 is filled while filling the hole formed in the upper layer portion 100. 113 may be formed, and the connection part 114 of the third temperature sensor may be formed of the vapor deposition material.

In the sixth step, a thin film of a vapor deposition material may be formed on the upper surface of the lower layer part 200.
At that time, a deposition material may be deposited on the top surface of the first insulating film 251 to form a thin film of the deposition material.

  In the seventh step, the vapor deposition material thin film is patterned in the lower layer portion 200 to form the heater 230, the first temperature sensor 210, the second temperature sensor 220, and the lower temperature portion 112 of the third temperature sensor, A groove 260 may be formed in the lower layer part 200.

Here, the thin film of the vapor deposition material is patterned on the first insulating film 251 of the lower layer part 200, and the lower layer part of the heater 230, the first temperature sensor 210, the second temperature sensor 220, and the third temperature sensor. The part 112 may be formed. Alternatively, the groove 260 may be formed in the lower layer portion 200 by performing etching using the heater 230, the first temperature sensor 210, and the second temperature sensor 220 as a mask. At that time, the etching method may be a wet etching method or a dry etching method.
In the eighth step, the upper layer part 100 and the lower layer part 200 may be combined.

In manufacturing the thermal convection type acceleration sensor of the present invention, the upper layer part 100 and the lower layer part 200 may be joined by one or more substances selected from the group consisting of epoxy, silicone, and polymer compounds.
In the embodiment of the present invention, it is described that the upper layer portion 100 and the lower layer portion 200 are bonded by the above-described substance, but the present invention is not necessarily limited thereto.

  In manufacturing the thermal convection type acceleration sensor of the present invention, the deposition material may be formed of one or more materials selected from the group consisting of metals, metal nanowires, and carbon nanomaterials.

  When the deposition material is a metal, the deposition material may be formed of one or more metals selected from the group consisting of platinum (Pt), nickel (Ni), and palladium (Pd). Further, for example, the carbon nanomaterial may be graphene or a carbon nanotube.

  FIG. 10 is an output characteristic graph in the thermal convection type acceleration sensor of the present invention. As shown in the graph of FIG. 10, it can be seen that the output voltage (Vout) increases in proportion to the increase in acceleration on the horizontal axis.

  In the case of FIG. 10, a graph a connected by inverted triangular dots is obtained by the thermal convection in the internal space of the upper layer part 100 due to the acceleration in the triaxial (z-axis) direction in the thermal convection type acceleration sensor of the present invention. 3 shows a change in the output voltage detected by the temperature sensor 110 of FIG.

  A graph b connected by square dots represents the first temperature sensor in the thermal convection type acceleration sensor of the present invention due to thermal convection in the internal space of the upper layer part 100 due to acceleration in one axis (x-axis) direction. A graph c showing a change in the output voltage detected at 210 and connected by circular dots is an internal space of the upper layer portion 100 due to acceleration in the biaxial (y-axis) direction in the thermal convection type acceleration sensor of the present invention. This shows a change in the output voltage detected by the second temperature sensor 220 due to the thermal convection.

  On the other hand, in the graph d connected by triangular dots, the uniaxial temperature sensor 10, the biaxial temperature sensor 20, and the triaxial temperature sensor 30 are formed on the upper surface of the substrate 50, as in the prior art. In the acceleration sensor in this case, the change in the output voltage detected by the third temperature sensor 110 due to thermal convection due to acceleration in the three-axis (z-axis) direction is shown.

  As shown in graphs a, b, and c of FIG. 10, in the thermal convection type acceleration sensor of the present invention, the detection performance of the third temperature sensor 110 is the detection performance of the first temperature sensor 210 or the second temperature sensor 220. It was confirmed that the formation was similar to the performance.

  As can be seen from the comparison of graphs a and d in FIG. 10, 3 of the thermal convection type acceleration sensor of the present invention, which is a system in which the upper layer portion 100 is formed and the third temperature sensor 110 is formed in the upper layer portion 100. It has been confirmed that the acceleration measurement performance with respect to the axis (z-axis) is significantly improved over the acceleration measurement performance with respect to the three axes (z-axis) of the conventional acceleration sensor 1 as shown in FIG.

  The above description of the present invention is for illustrative purposes only, and any person having ordinary knowledge in the technical field to which the present invention pertains can be used without changing the technical idea and essential features of the present invention. It will be understood that it can be easily transformed into a specific form. Thus, it should be understood that the above-described embodiments are merely illustrative and not limiting. For example, each constituent element described in a single type may be distributed and may be implemented in a combined form.

  The scope of the present invention is indicated by the appended claims, and all modifications or variations derived from the meaning and scope of the claims and equivalents thereof are also included in the present invention.

1: conventional acceleration sensor 10: 1 axis temperature sensor 20: 2 axis temperature sensor 30: 3 axis temperature sensor 40: heater 50: substrate 100: upper layer part 110: third temperature sensor 111: third axis Upper part of temperature sensor 112: Lower part of third temperature sensor 113: Pull-in part of third temperature sensor 114: Connection part of third temperature sensor 120: Upper insulating film 200: Lower part 210: First 1 temperature sensor 220: second temperature sensor 230: heater 240: semiconductor substrate 251: first insulating film 252: second insulating film 260: groove

Claims (15)

A lower layer with a heater in the center;
A first temperature sensor formed on one axis around the heater in the lower layer portion;
A second temperature sensor formed on two axes around the heater in the lower layer portion;
An upper layer part that is coupled to the upper surface of the lower layer part and has an internal space formed toward the lower layer part,
And a third temperature sensor formed in the upper layer part such that a part of the thermal convection type acceleration sensor is exposed to the internal space of the upper layer part. The third temperature sensor is connected to the upper layer portion of the third temperature sensor formed on the inner surface of the upper layer portion and the upper layer portion portion of the third temperature sensor, and is formed on the upper surface of the lower layer portion. The thermal convection type acceleration sensor according to claim 1, further comprising a lower layer portion of the third temperature sensor to be operated. The thermal convection type acceleration sensor according to claim 1, wherein the heater includes metal wiring that is densely arranged in a bent shape at a central portion of the upper surface of the lower layer portion. The thermal convection type acceleration sensor according to claim 1, wherein a part of the first temperature sensor is formed apart from the heater so as to be in contact with a gas in the internal space of the upper layer part. The thermal convection type acceleration sensor according to claim 1, wherein a part of the second temperature sensor is formed apart from the heater so as to come into contact with a gas in the internal space of the upper layer part. The lower layer portion is formed of a semiconductor substrate and an insulating material on an upper surface of the semiconductor substrate, and the heater, the first temperature sensor, and the second temperature sensor are formed thereon. The thermal convection type acceleration sensor according to claim 1, further comprising: a second insulating film formed of an insulating material on a lower surface of the semiconductor substrate. The lower layer is formed of a semiconductor substrate having a groove in a central region of the upper surface, and an insulating material on the upper surface of the semiconductor substrate excluding the groove, and both ends of the heater and both ends of the first temperature sensor The first insulating film formed on both ends of the second temperature sensor, and a second insulating film formed of an insulating material on the lower surface of the semiconductor substrate. Thermal convection type acceleration sensor. A lower layer with a heater in the center;
A first temperature sensor formed on one axis around the heater in the lower layer portion;
A second temperature sensor formed on two axes around the heater in the lower layer portion;
An upper layer part that is coupled to the upper surface of the lower layer part and has an internal space formed toward the lower layer part,
A third temperature sensor formed in the upper layer part such that a part of the temperature sensor is exposed to the internal space of the upper layer part,
A thermal convection type acceleration sensor, wherein a hole is formed in the internal space of the upper layer portion from the upper surface of the upper layer portion. The third temperature sensor is connected to a pull-in portion of the third temperature sensor exposed to the internal space of the upper layer portion while filling the hole, and a pull-in portion of the third temperature sensor, The thermal convection type acceleration sensor according to claim 8, further comprising: a third temperature sensor connecting portion formed on an upper surface. The lower layer portion is formed of a semiconductor substrate and an insulating material on an upper surface of the semiconductor substrate, and the heater, the first temperature sensor, and the second temperature sensor are formed thereon. The thermal convection type acceleration sensor according to claim 8, further comprising: a second insulating film formed of an insulating material on a lower surface of the semiconductor substrate. The lower layer portion is formed of a semiconductor substrate having a groove in a central region of the upper surface, and an insulating material on the upper surface of the semiconductor substrate excluding the groove, and the heater, the first temperature sensor, and the second temperature sensor. The thermal convection type acceleration sensor according to claim 8, further comprising: a first insulating film formed thereon, and a second insulating film formed of an insulating material on a lower surface of the semiconductor substrate. i) forming an upper layer insulating film on the lower surface of the upper layer portion;
ii) etching the lower surface of the upper layer portion to form an internal space;
iii) depositing a deposition material on the inner surface of the upper layer portion to form an upper layer portion of the third temperature sensor;
iv) forming a thin film of the vapor deposition material on the upper surface of the lower layer;
v) Patterning the thin film of the vapor deposition material in the lower layer portion to form lower layer portions of the heater, the first temperature sensor, the second temperature sensor, and the third temperature sensor, and forming a groove in the lower layer portion And steps to
vi) A step of coupling the upper layer portion and the lower layer portion. A method for manufacturing a thermal convection type acceleration sensor, comprising: i) forming an upper layer insulating film on the lower surface of the upper layer portion;
ii) etching the lower surface of the upper layer portion to form an internal space;
iii) depositing a vapor deposition material, and forming a terminal of the lead-in part of the third temperature sensor on the upper surface of the internal space of the upper layer part;
iv) forming a hole in the upper surface of the upper layer part;
v) The vapor deposition material is vapor-deposited on the upper surface of the upper layer portion, and a third temperature sensor lead-in portion including the end of the third temperature sensor lead-in portion is formed while filling the hole formed in the upper layer portion. Forming a connection part of a third temperature sensor with the vapor deposition material;
vi) forming a thin film of the vapor deposition material on the upper surface of the lower layer;
vii) Patterning the thin film of the vapor deposition material in the lower layer portion to form the lower layer portion of the heater, the first temperature sensor, the second temperature sensor, and the third temperature sensor, and forming a groove in the lower layer portion And steps to
viii) a step of coupling the upper layer portion and the lower layer portion. A method for manufacturing a thermal convection type acceleration sensor, comprising: The method for manufacturing a thermal convection type acceleration sensor according to claim 12 or 13, wherein the upper layer part and the lower layer part are joined by one or more substances selected from the group consisting of epoxy, silicone, and a polymer compound. The method for manufacturing a thermal convection type acceleration sensor according to claim 12 or 13, wherein the vapor deposition material is formed of one or more materials selected from the group consisting of metals, metal nanowires, and carbon nanomaterials.

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