JP2019507330A - 半導体ウェハ検査及び計量システム及び方法 - Google Patents
半導体ウェハ検査及び計量システム及び方法 Download PDFInfo
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- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
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Abstract
Description
本願は、2015年1月12日付米国仮特許出願第62/102312号に基づく優先権を主張するものであり、この参照により当該暫定特許出願の開示内容を本願に繰り入れることにする。
V=(Pq−Sq)/(Pq+Sq) (等式1)
Claims (20)
- ウェハを保持するよう構成されたステージと、
そのステージ上のウェハの表面にビームを差し向けるよう構成された光源と、
上記表面にて反射されたビームを受け取り少なくとも2個の偏向チャネルを提供するよう構成されており、各偏向チャネルが信号を発するセンサと、
そのセンサと電子通信するコントローラと、
を備え、上記コントローラが、
各偏向チャネルから信号を受け取るよう、
一対の信号間の差異を正規化することで正規化結果を生成するよう、且つ
その正規化結果と上記一対の信号の合計強度とに基づきウェハ上の層の値、但し厚み、表面粗さ、素材濃度及び限界寸法のうち一つである値を導出するよう、
構成されているシステム。 - 請求項1に記載のシステムであって、上記センサが偏向感知型検出器であるシステム。
- 請求項1に記載のシステムであって、6個の偏向チャネルを提供するよう上記センサが構成されており、そのセンサが、
第1ビームスプリッタと、
第1ビームスプリッタから光を受け取るよう構成された第2ビームスプリッタと、
第1ビームスプリッタから光を受け取るよう構成された第1偏向ビームスプリッタであり、上記6個の偏向チャネルのうち2個を生成するよう構成された第1偏向ビームスプリッタと、
第2ビームスプリッタから光を受け取るよう構成された第2偏向ビームスプリッタであり、上記6個の偏向チャネルのうち2個を生成するよう構成された第2偏向ビームスプリッタと、
第2ビームスプリッタから光を受け取るよう構成された第3偏向ビームスプリッタであり、上記6個の偏向チャネルのうち2個を生成するよう構成された第3偏向ビームスプリッタと、
を有するシステム。 - 請求項3に記載のシステムであって、第1ビームスプリッタが30/70ビームスプリッタであるシステム。
- 請求項3に記載のシステムであって、第2ビームスプリッタが50/50ビームスプリッタであるシステム。
- 請求項3に記載のシステムであって、入射面に対し第2偏向ビームスプリッタが45°をなし第3偏向ビームスプリッタが0°をなすシステム。
- 請求項3に記載のシステムであって、更に、第1ビームスプリッタ・第1偏向ビームスプリッタ間に配された1/4波長プレートを備えるシステム。
- 請求項3に記載のシステムであって、上記コントローラが、更に、複数対の信号を正規化することで三通りの正規化結果を生成しそれら三通りの正規化結果に基づき上記値を導出するよう構成されているシステム。
- 請求項1に記載のシステムであって、上記コントローラが、式V=(Pq−Sq)/(Pq+Sq)、但しPq及びSqが上記一対の信号、Vが正規化結果、Sp=Pq+Sqが上記合計強度である式を用い、上記一対の信号間の差異を正規化するよう構成されているシステム。
- 請求項1に記載のシステムであって、各偏向チャネルが偏向ビームスプリッタにより生成されるシステム。
- 請求項1に記載のシステムであって、上記表面で反射されたビームからなる4個以下の偏向チャネルを提供するよう上記センサが構成されているシステム。
- 請求項1に記載のシステムであって、複数通りの波長にてビームを差し向けるよう上記光源が構成されており、その光源が、可調レーザか、或いは別々の波長で稼働する複数個のレーザの波長多重であるシステム。
- 請求項1に記載のシステムであって、上記コントローラが、非線形最小二乗最適化アルゴリズムにより上記一対の信号又は正規化結果を当てはめることで上記層の上記値を導出するよう構成されているシステム。
- 光源からウェハの表面へとビームを差し向けるステップと、
上記表面にて反射されたビームをセンサで以て受け取るステップと、
少なくとも1個の偏向ビームスプリッタを用い上記センサにおけるビームを複数個の偏向チャネルへと分岐させるステップと、
各偏向チャネルから信号を生成するステップと、
一対の上記信号間の差異を正規化することで正規化結果を生成するステップと、
正規化結果と上記一対の信号の合計強度とに基づきウェハ上の層の値、但し厚み、表面粗さ、素材濃度及び限界寸法のうち一つである値を導出するステップと、
を有する方法。 - 請求項14に記載の方法であって、上記正規化にて式V=(Pq−Sq)/(Pq+Sq)、但しPq及びSqが上記一対の信号、Vが正規化結果、Sp=Pq+Sqが上記合計強度である式を用いる方法。
- 請求項14に記載の方法であって、上記分岐が、更に、3個の偏向ビームスプリッタを用いビームを6個の偏向チャネルへと分岐させるステップを含む方法。
- 請求項16に記載の方法であって、上記正規化が、更に、三通りの正規化結果を生成するステップを含む方法。
- 請求項14に記載の方法であって、更に、計測された信号をモデルを用い分析することでウェハ上の層の上記値を導出するステップを有する方法。
- 請求項14に記載の方法であって、上記ビームが複数通りの波長を有し、当該複数通りの波長が、可調レーザによって、或いは別々の波長で稼働する複数個のレーザの波長多重によって生成される方法。
- 請求項14に記載の方法であって、上記導出が、非線形最小二乗最適化アルゴリズムにより上記一対の信号又は正規化結果を当てはめるステップを含む方法。
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US201562102312P | 2015-01-12 | 2015-01-12 | |
US14/990,233 US9658150B2 (en) | 2015-01-12 | 2016-01-07 | System and method for semiconductor wafer inspection and metrology |
US14/990,233 | 2016-01-07 | ||
PCT/US2016/013199 WO2017119911A1 (en) | 2015-01-12 | 2016-01-13 | System and method for semiconductor wafer inspection and metrology |
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---|---|---|---|---|
US9747520B2 (en) | 2015-03-16 | 2017-08-29 | Kla-Tencor Corporation | Systems and methods for enhancing inspection sensitivity of an inspection tool |
US10563973B2 (en) | 2016-03-28 | 2020-02-18 | Kla-Tencor Corporation | All surface film metrology system |
JP2019158345A (ja) * | 2018-03-07 | 2019-09-19 | 株式会社東芝 | 検査システム、検査方法、プログラム、及び記憶媒体 |
WO2021004724A1 (en) * | 2019-07-11 | 2021-01-14 | Asml Netherlands B.V. | Apparatus and method for measuring substrate height |
US11221300B2 (en) | 2020-03-20 | 2022-01-11 | KLA Corp. | Determining metrology-like information for a specimen using an inspection tool |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020105646A1 (en) * | 2000-12-20 | 2002-08-08 | Guoheng Zhao | Systems for measuring periodic structures |
JP2008177317A (ja) * | 2007-01-18 | 2008-07-31 | Dainippon Screen Mfg Co Ltd | 基板支持装置、表面電位測定装置、膜厚測定装置および基板検査装置 |
JP2008244448A (ja) * | 2007-02-21 | 2008-10-09 | Asml Netherlands Bv | 検査方法および装置、リソグラフィ装置、ならびにリソグラフィセル |
JP2015127708A (ja) * | 2004-05-14 | 2015-07-09 | ケーエルエー−テンカー コーポレイション | 試験体の測定または分析のためのシステムおよび方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0571923A (ja) * | 1991-09-12 | 1993-03-23 | Canon Inc | 偏光解析方法および薄膜測定装置 |
US5798829A (en) * | 1996-03-05 | 1998-08-25 | Kla-Tencor Corporation | Single laser bright field and dark field system for detecting anomalies of a sample |
US20020015146A1 (en) * | 1997-09-22 | 2002-02-07 | Meeks Steven W. | Combined high speed optical profilometer and ellipsometer |
US6031615A (en) * | 1997-09-22 | 2000-02-29 | Candela Instruments | System and method for simultaneously measuring lubricant thickness and degradation, thin film thickness and wear, and surface roughness |
US6134011A (en) * | 1997-09-22 | 2000-10-17 | Hdi Instrumentation | Optical measurement system using polarized light |
DE19914994A1 (de) | 1998-04-03 | 1999-10-14 | Advantest Corp | Verfahren und Vorrichtung zur Oberflächenprüfung |
JP4487418B2 (ja) * | 2000-12-07 | 2010-06-23 | 株式会社Sumco | 歪み半導体層の歪み量測定方法及び歪み量測定装置 |
US7324214B2 (en) * | 2003-03-06 | 2008-01-29 | Zygo Corporation | Interferometer and method for measuring characteristics of optically unresolved surface features |
US7271921B2 (en) | 2003-07-23 | 2007-09-18 | Kla-Tencor Technologies Corporation | Method and apparatus for determining surface layer thickness using continuous multi-wavelength surface scanning |
JP2005140585A (ja) | 2003-11-05 | 2005-06-02 | Fujitsu Ltd | 偏光状態測定装置 |
US7239389B2 (en) * | 2004-07-29 | 2007-07-03 | Applied Materials, Israel, Ltd. | Determination of irradiation parameters for inspection of a surface |
US7161667B2 (en) * | 2005-05-06 | 2007-01-09 | Kla-Tencor Technologies Corporation | Wafer edge inspection |
US7295300B1 (en) | 2005-09-28 | 2007-11-13 | Kla-Tencor Technologies Corporation | Detecting surface pits |
US7623427B2 (en) * | 2006-01-18 | 2009-11-24 | Seagate Technology Llc | Surface inspection by amplitude modulated specular light detection |
US20080212096A1 (en) | 2007-03-01 | 2008-09-04 | Deepak Kumar | Property determination with light impinging at characteristic angle |
US8178784B1 (en) | 2008-07-20 | 2012-05-15 | Charles Wesley Blackledge | Small pins and microscopic applications thereof |
US20110246400A1 (en) * | 2010-03-31 | 2011-10-06 | Tokyo Electron Limited | System for optical metrology optimization using ray tracing |
JP2013156143A (ja) * | 2012-01-30 | 2013-08-15 | Seiko Epson Corp | 光学測定装置及び光学測定方法 |
US8854623B2 (en) * | 2012-10-25 | 2014-10-07 | Corning Incorporated | Systems and methods for measuring a profile characteristic of a glass sample |
FR2998047B1 (fr) | 2012-11-12 | 2015-10-02 | Soitec Silicon On Insulator | Procede de mesure des variations d'epaisseur d'une couche d'une structure semi-conductrice multicouche |
DE102013002637A1 (de) * | 2013-02-15 | 2014-08-21 | Freiberger Compound Materials Gmbh | Verfahren zur Herstellung eines Galliumarsenidsubstrats, Galliumarsenidsubstrat und Verwendung desselben |
US20140268149A1 (en) * | 2013-03-15 | 2014-09-18 | University Of Rochester | Device and method for detection of polarization features |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020105646A1 (en) * | 2000-12-20 | 2002-08-08 | Guoheng Zhao | Systems for measuring periodic structures |
JP2015127708A (ja) * | 2004-05-14 | 2015-07-09 | ケーエルエー−テンカー コーポレイション | 試験体の測定または分析のためのシステムおよび方法 |
JP2008177317A (ja) * | 2007-01-18 | 2008-07-31 | Dainippon Screen Mfg Co Ltd | 基板支持装置、表面電位測定装置、膜厚測定装置および基板検査装置 |
JP2008244448A (ja) * | 2007-02-21 | 2008-10-09 | Asml Netherlands Bv | 検査方法および装置、リソグラフィ装置、ならびにリソグラフィセル |
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CN108780764A (zh) | 2018-11-09 |
TWI665426B (zh) | 2019-07-11 |
WO2017119911A1 (en) | 2017-07-13 |
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IL259968B (en) | 2021-05-31 |
JP2020030218A (ja) | 2020-02-27 |
DE112016006185B4 (de) | 2023-10-19 |
CN113959336A (zh) | 2022-01-21 |
TW201636574A (zh) | 2016-10-16 |
JP6878553B2 (ja) | 2021-05-26 |
DE112016006185T5 (de) | 2018-09-20 |
KR20180102597A (ko) | 2018-09-17 |
IL259968A (en) | 2018-10-31 |
US9658150B2 (en) | 2017-05-23 |
US20160202177A1 (en) | 2016-07-14 |
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