JP2019502269A5 - - Google Patents
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- Publication number
- JP2019502269A5 JP2019502269A5 JP2018536111A JP2018536111A JP2019502269A5 JP 2019502269 A5 JP2019502269 A5 JP 2019502269A5 JP 2018536111 A JP2018536111 A JP 2018536111A JP 2018536111 A JP2018536111 A JP 2018536111A JP 2019502269 A5 JP2019502269 A5 JP 2019502269A5
- Authority
- JP
- Japan
- Prior art keywords
- etching
- processing
- remote plasma
- containing precursor
- end ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002243 precursor Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 16
- 239000000758 substrate Substances 0.000 claims 6
- 239000003054 catalyst Substances 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662278255P | 2016-01-13 | 2016-01-13 | |
| US62/278,255 | 2016-01-13 | ||
| PCT/US2016/069204 WO2017123423A1 (en) | 2016-01-13 | 2016-12-29 | Hydrogen plasma based cleaning process for etch hardware |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019502269A JP2019502269A (ja) | 2019-01-24 |
| JP2019502269A5 true JP2019502269A5 (https=) | 2021-06-10 |
| JP6920309B2 JP6920309B2 (ja) | 2021-08-18 |
Family
ID=59275910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018536111A Active JP6920309B2 (ja) | 2016-01-13 | 2016-12-29 | エッチングハードウェアに対する水素プラズマベース洗浄処理 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10026597B2 (https=) |
| JP (1) | JP6920309B2 (https=) |
| KR (1) | KR102729098B1 (https=) |
| CN (2) | CN117153656A (https=) |
| TW (2) | TWI767897B (https=) |
| WO (1) | WO2017123423A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102157876B1 (ko) * | 2018-08-28 | 2020-09-18 | 한국기계연구원 | 리모트 플라즈마 장치를 구비한 진공 펌프 시스템 |
| JP7604145B2 (ja) * | 2019-11-25 | 2024-12-23 | 東京エレクトロン株式会社 | 基板処理方法及びプラズマ処理装置 |
| CN113113280B (zh) * | 2020-01-09 | 2022-06-10 | 江苏鲁汶仪器有限公司 | 等离子体处理系统及其开合法拉第组件 |
| KR102860972B1 (ko) | 2020-06-10 | 2025-09-16 | 삼성전자주식회사 | 반도체 증착 모니터링 장치 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6090304A (en) * | 1997-08-28 | 2000-07-18 | Lam Research Corporation | Methods for selective plasma etch |
| US6843858B2 (en) * | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
| US20060051966A1 (en) * | 2004-02-26 | 2006-03-09 | Applied Materials, Inc. | In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
| TWI387667B (zh) * | 2004-12-21 | 2013-03-01 | 應用材料股份有限公司 | 用於自化學氣相蝕刻處理室移除副產物沉積的原位處理室清潔製程 |
| KR20070087196A (ko) * | 2004-12-21 | 2007-08-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학 기상 에칭 챔버로부터 부산물 증착을 제거하기 위한인-시튜 챔버 세정 방법 |
| US20060254613A1 (en) * | 2005-05-16 | 2006-11-16 | Dingjun Wu | Method and process for reactive gas cleaning of tool parts |
| JP4773142B2 (ja) * | 2005-06-14 | 2011-09-14 | 芝浦メカトロニクス株式会社 | ステージ及びそれを備えた半導体処理装置 |
| US20100099263A1 (en) * | 2008-10-20 | 2010-04-22 | Applied Materials, Inc. | Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects |
| JP5703315B2 (ja) * | 2011-02-08 | 2015-04-15 | 株式会社アルバック | ラジカルエッチング方法 |
| KR20130012671A (ko) * | 2011-07-26 | 2013-02-05 | 삼성전자주식회사 | 반도체 소자 제조 장비의 세정 방법 |
| JP5982223B2 (ja) * | 2012-08-27 | 2016-08-31 | 東京エレクトロン株式会社 | プラズマ処理方法、及びプラズマ処理装置 |
| JP6049527B2 (ja) * | 2013-04-05 | 2016-12-21 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP6177601B2 (ja) * | 2013-06-25 | 2017-08-09 | 東京エレクトロン株式会社 | クリーニング方法及び基板処理装置 |
| JP6285213B2 (ja) * | 2014-03-03 | 2018-02-28 | 東京エレクトロン株式会社 | プラズマ処理装置のクリーニング方法 |
| US9824865B2 (en) * | 2014-03-05 | 2017-11-21 | Lam Research Corporation | Waferless clean in dielectric etch process |
| US9397011B1 (en) | 2015-04-13 | 2016-07-19 | Lam Research Corporation | Systems and methods for reducing copper contamination due to substrate processing chambers with components made of alloys including copper |
-
2016
- 2016-12-29 WO PCT/US2016/069204 patent/WO2017123423A1/en not_active Ceased
- 2016-12-29 JP JP2018536111A patent/JP6920309B2/ja active Active
- 2016-12-29 CN CN202311109376.1A patent/CN117153656A/zh active Pending
- 2016-12-29 KR KR1020187022853A patent/KR102729098B1/ko active Active
- 2016-12-29 CN CN201680062587.6A patent/CN108292601A/zh active Pending
-
2017
- 2017-01-03 US US15/397,429 patent/US10026597B2/en active Active
- 2017-01-10 TW TW106100674A patent/TWI767897B/zh active
- 2017-01-10 TW TW109141502A patent/TWI768564B/zh active
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