JP2019220593A - Electrostatic chuck and substrate fixing device - Google Patents

Electrostatic chuck and substrate fixing device Download PDF

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JP2019220593A
JP2019220593A JP2018117331A JP2018117331A JP2019220593A JP 2019220593 A JP2019220593 A JP 2019220593A JP 2018117331 A JP2018117331 A JP 2018117331A JP 2018117331 A JP2018117331 A JP 2018117331A JP 2019220593 A JP2019220593 A JP 2019220593A
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base
electrostatic chuck
base plate
wire
metal
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JP7278035B2 (en
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知剛 峯村
Tomotake Minemura
知剛 峯村
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2018117331A priority Critical patent/JP7278035B2/en
Priority to US16/434,226 priority patent/US10957574B2/en
Priority to KR1020190068474A priority patent/KR20190143369A/en
Priority to CN201910519459.5A priority patent/CN110620075A/en
Priority to TW108120639A priority patent/TWI827619B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

To provide an electrostatic chuck which enables accurate temperature measurement.SOLUTION: An electrostatic chuck has: a substrate including a placement surface which suctions and holds a suction object; and a thermo-couple which detects a temperature of the substrate. The thermo-couple includes: a first metal part and a second metal part which are provided at an interior of the substrate and joined to each other at one end parts to form a temperature measuring contact; a first wire part in which one end is joined to the other end of the first metal part at the interior of the substrate and the other end extends to an exterior part of the substrate; and a second wire part in which one end is joined to the other end of the second metal part at the interior of the substrate and the other end extends to the exterior part of the substrate. The first metal part and the first wire part are formed by a first material, and the second metal part and the second wire part are formed by a second material different from the first material.SELECTED DRAWING: Figure 1

Description

本発明は、静電チャック、基板固定装置に関する。   The present invention relates to an electrostatic chuck and a substrate fixing device.

従来、ＩＣやＬＳＩ等の半導体装置を製造する際に使用される成膜装置（例えば、ＣＶＤ装置やＰＶＤ装置等）やプラズマエッチング装置は、ウェハを真空の処理室内に精度良く保持するためのステージを有する。このようなステージとして、例えば、ベースプレートに搭載された静電チャックによりウェハを吸着保持する基板固定装置が提案されている。   2. Description of the Related Art Conventionally, a film forming apparatus (for example, a CVD apparatus or a PVD apparatus) or a plasma etching apparatus used when manufacturing a semiconductor device such as an IC or an LSI is a stage for accurately holding a wafer in a vacuum processing chamber. Having. As such a stage, for example, a substrate fixing device that holds a wafer by suction using an electrostatic chuck mounted on a base plate has been proposed.

静電チャックには、ウェハの温度調節をするための発熱体を設けた構造のものがある。この場合、例えば、静電チャックに熱電対を埋設し、熱電対で検出した静電チャックの温度に基づいて発熱体を制御し、ウェハの温度調節が行われる（例えば、特許文献１参照）。   Some electrostatic chucks have a structure provided with a heating element for controlling the temperature of a wafer. In this case, for example, a thermocouple is embedded in an electrostatic chuck, and a heating element is controlled based on the temperature of the electrostatic chuck detected by the thermocouple, so that the temperature of the wafer is adjusted (for example, see Patent Document 1).

特開２０００−２８６３３１号公報JP 2000-286331 A

しかしながら、上記の構造では、温度分布の少ない静電チャック内のみに熱電対を設けていたため、熱電対に温度差が生じ難く、大きな熱起電力が得られなかった。その結果、静電チャックの温度を精度よく測定できなかった。   However, in the above structure, since the thermocouple is provided only in the electrostatic chuck having a small temperature distribution, a temperature difference hardly occurs in the thermocouple, and a large thermoelectromotive force cannot be obtained. As a result, the temperature of the electrostatic chuck could not be measured accurately.

本発明は、上記の点に鑑みてなされたものであり、精度のよい温度測定が可能な静電チャックを提供することを課題とする。   The present invention has been made in view of the above points, and has as its object to provide an electrostatic chuck capable of performing accurate temperature measurement.

本静電チャックは、吸着対象物を吸着保持する載置面を備えた基体と、前記基体の温度を検出する熱電対と、を有し、前記熱電対は、前記基体の内部に設けられ、一端同士が接合されて測温接点を形成する第１金属部及び第２金属部と、一端が前記基体の内部で前記第１金属部の他端と接合され、他端が前記基体の外部に延伸する第１線材部と、一端が前記基体の内部で前記第２金属部の他端と接合され、他端が前記基体の外部に延伸する第２線材部と、を備え、前記第１金属部と前記第１線材部とは第１の材料から形成され、前記第２金属部と前記第２線材部とは前記第１の材料とは異なる第２の材料から形成されていることを要件とする。   The present electrostatic chuck has a base having a mounting surface for holding the suction target by suction, and a thermocouple for detecting the temperature of the base, and the thermocouple is provided inside the base, A first metal part and a second metal part having one end joined to form a temperature measuring contact; one end joined to the other end of the first metal part inside the base, and the other end outside the base; A first wire portion extending; and a second wire portion having one end joined to the other end of the second metal portion inside the base and the other end extending outside the base. The part and the first wire part are required to be formed from a first material, and the second metal part and the second wire part are required to be formed from a second material different from the first material. And

開示の技術によれば、精度のよい温度測定が可能な静電チャックを提供できる。   According to the disclosed technique, it is possible to provide an electrostatic chuck capable of performing accurate temperature measurement.

第１の実施の形態に係る基板固定装置を簡略化して例示する図である。It is a figure which simplifies and illustrates the board | substrate fixing device which concerns on 1st Embodiment. 第１の実施の形態に係る基板固定装置の製造工程を例示する図（その１）である。FIG. 7 is a diagram (part 1) illustrating a manufacturing step of the substrate fixing device according to the first embodiment. 第１の実施の形態に係る基板固定装置の製造工程を例示する図（その２）である。FIG. 7 is a diagram (part 2) illustrating a manufacturing step of the substrate fixing device according to the first embodiment. 第１の実施の形態に係る基板固定装置における温度差と熱起電力との関係の一例を示す図である。FIG. 5 is a diagram illustrating an example of a relationship between a temperature difference and a thermoelectromotive force in the substrate fixing device according to the first embodiment. 第１の実施の形態の変形例１に係る基板固定装置を簡略化して例示する断面図である。It is sectional drawing which simplifies and illustrates the board | substrate fixing device which concerns on the modification 1 of 1st Embodiment.

以下、図面を参照して発明を実施するための形態について説明する。なお、各図面において、同一構成部分には同一符号を付し、重複した説明を省略する場合がある。   Hereinafter, embodiments for carrying out the invention will be described with reference to the drawings. In each of the drawings, the same components are denoted by the same reference numerals, and redundant description may be omitted.

〈第１の実施の形態〉
［基板固定装置の構造］
図１は、第１の実施の形態に係る基板固定装置を簡略化して例示する図であり、図１（ａ）は断面図、図１（ｂ）は図１（ａ）の熱電対のみを示す部分拡大斜視図である。 <First Embodiment>
[Structure of board fixing device]
FIGS. 1A and 1B are diagrams schematically illustrating the substrate fixing device according to the first embodiment. FIG. 1A is a cross-sectional view, and FIG. 1B is a diagram illustrating only the thermocouple of FIG. It is a partial expansion perspective view shown.

図１を参照するに、基板固定装置１は、主要な構成要素として、ベースプレート１０と、接着層２０と、静電チャック３０と、制御部４０とを有している。
基板固定装置１は、ベースプレート１０の一方の面１０ａに搭載された静電チャック３０により吸着対象物である基板（ウェハ等）を吸着保持する装置である。 Referring to FIG. 1, the substrate fixing device 1 includes a base plate 10, an adhesive layer 20, an electrostatic chuck 30, and a control unit 40 as main components.
The substrate fixing device 1 is a device that sucks and holds a substrate (a wafer or the like) as an object to be sucked by an electrostatic chuck 30 mounted on one surface 10a of the base plate 10.

ベースプレート１０は、静電チャック３０を搭載するための部材である。ベースプレート１０の厚さは、例えば、２０〜５０ｍｍ程度とすることができる。ベースプレート１０は、例えば、アルミニウムから形成され、プラズマを制御するための電極等として利用することもできる。ベースプレート１０に所定の高周波電力を給電することで、発生したプラズマ状態にあるイオン等を静電チャック３０上に吸着されたウェハに衝突させるためのエネルギーを制御し、エッチング処理を効果的に行うことができる。   The base plate 10 is a member on which the electrostatic chuck 30 is mounted. The thickness of the base plate 10 can be, for example, about 20 to 50 mm. The base plate 10 is made of, for example, aluminum and can be used as an electrode for controlling plasma. By supplying a predetermined high-frequency power to the base plate 10, the energy for causing the generated ions and the like in the plasma state to collide with the wafer adsorbed on the electrostatic chuck 30 is controlled, and the etching process is effectively performed. Can be.

ベースプレート１０の内部に水路を設けてもよい。この場合、水路は、基板固定装置１の外部に設けられた冷却水制御装置に接続され、冷却水制御装置は水路に冷却水を導入及び排出する。冷却水制御装置を用いて水路に冷却水を循環させベースプレート１０を冷却することで、静電チャック３０上に吸着されたウェハを冷却できる。ベースプレート１０に、水路の他に、静電チャック３０上に吸着されたウェハを冷却する不活性ガスを導入するガス路等を設けてもよい。   A water channel may be provided inside the base plate 10. In this case, the water channel is connected to a cooling water control device provided outside the substrate fixing device 1, and the cooling water control device introduces and discharges cooling water into and from the water channel. By cooling the base plate 10 by circulating cooling water through the water channel using the cooling water control device, the wafer adsorbed on the electrostatic chuck 30 can be cooled. In addition to the water path, the base plate 10 may be provided with a gas path or the like for introducing an inert gas for cooling the wafer adsorbed on the electrostatic chuck 30.

静電チャック３０は、接着層２０を介して、ベースプレート１０上に固着されている。接着層２０としては、例えば、シリコーン系接着剤を用いることができる。接着層２０の厚さは、例えば、０．５〜２ｍｍ程度とすることができる。接着層２０の熱伝導率は２Ｗ／ｍＫ以上とすることが好ましい。接着層２０は、１層から形成してもよいが、熱伝導率が高い接着剤と弾性率が低い接着剤とを組み合わせた２層構造とすることが好ましい。これにより、セラミックス製の静電チャック３０とアルミニウム製のベースプレート１０との熱膨張率の差から生じるストレスを低減させる効果が得られる。   The electrostatic chuck 30 is fixed on the base plate 10 via the adhesive layer 20. As the adhesive layer 20, for example, a silicone-based adhesive can be used. The thickness of the adhesive layer 20 can be, for example, about 0.5 to 2 mm. It is preferable that the thermal conductivity of the adhesive layer 20 be 2 W / mK or more. The adhesive layer 20 may be formed from a single layer, but preferably has a two-layer structure in which an adhesive having a high thermal conductivity and an adhesive having a low elastic modulus are combined. Thus, an effect of reducing stress caused by a difference in thermal expansion coefficient between the ceramic electrostatic chuck 30 and the aluminum base plate 10 can be obtained.

静電チャック３０は、基体３１と、静電電極３２と、発熱体３３と、熱電対３４とを有している。静電チャック３０は、例えば、クーロン力型静電チャックである。但し、静電チャック３０は、ジョンセン・ラーベック型静電チャックであってもよい。   The electrostatic chuck 30 has a base 31, an electrostatic electrode 32, a heating element 33, and a thermocouple 34. The electrostatic chuck 30 is, for example, a Coulomb force type electrostatic chuck. However, the electrostatic chuck 30 may be a Johnsen-Rahbek type electrostatic chuck.

基体３１は、吸着対象物である基板（ウェハ等）を吸着保持する載置面３１ａを備えている。基体３１は誘電体であり、基体３１としては、例えば、酸化アルミニウム（Ａｌ２Ｏ３）、窒化アルミニウム（ＡｌＮ）等のセラミックスを用いることができる。基体３１の厚さは、例えば、１〜１０ｍｍ程度、基体３１の比誘電率（１ｋＨｚ）は、例えば、９〜１０程度とすることができる。 The base 31 includes a mounting surface 31a that holds a substrate (a wafer or the like) as a suction target by suction. The base 31 is a dielectric. As the base 31, for example, ceramics such as aluminum oxide (Al 2 O 3 ) and aluminum nitride (AlN) can be used. The thickness of the base 31 may be, for example, about 1 to 10 mm, and the relative dielectric constant (1 kHz) of the base 31 may be, for example, about 9 to 10.

静電電極３２は、薄膜電極であり、基体３１に内蔵されている。静電電極３２は、基板固定装置１の外部に設けられた電源に接続され、電源から所定の電圧を印加することで吸着対象物との間に静電気による吸着力（クーロン力）を発生させる。これにより、基体３１の載置面３１ａ上にウェハを吸着保持することができる。吸着保持力は、静電電極３２に印加される電圧が高いほど強くなる。静電電極３２は、単極形状でも、双極形状でも構わない。静電電極３２の材料としては、例えば、タングステン、モリブデン等を用いることができる。   The electrostatic electrode 32 is a thin film electrode and is built in the base 31. The electrostatic electrode 32 is connected to a power supply provided outside the substrate fixing device 1, and generates a suction force (Coulomb force) due to static electricity between the electrostatic electrode 32 and a suction target object by applying a predetermined voltage from the power supply. Thus, the wafer can be suction-held on the mounting surface 31a of the base 31. The suction holding force increases as the voltage applied to the electrostatic electrode 32 increases. The electrostatic electrode 32 may have a monopolar shape or a bipolar shape. As a material of the electrostatic electrode 32, for example, tungsten, molybdenum, or the like can be used.

発熱体３３は、基体３１に内蔵され、図示しない配線により制御部４０と電気的に接続されている。発熱体３３は、制御部４０から電圧を印加することで発熱し、基体３１の載置面３１ａが所定の温度となるように加熱する。発熱体３３は、例えば、基体３１の載置面３１ａの温度を２５０℃〜３００℃程度まで加熱することができる。発熱体３３の材料としては、例えば、銅（Ｃｕ）やタングステン（Ｗ）、ニッケル（Ｎｉ）等を用いることができる。   The heating element 33 is built in the base 31 and is electrically connected to the control unit 40 by wiring (not shown). The heating element 33 generates heat by applying a voltage from the control unit 40, and heats the mounting surface 31a of the base 31 to a predetermined temperature. The heating element 33 can heat the mounting surface 31a of the base 31 to about 250 ° C. to 300 ° C., for example. As a material of the heating element 33, for example, copper (Cu), tungsten (W), nickel (Ni), or the like can be used.

熱電対３４は、基体３１の温度を検出する温度検出手段であり、第１金属部３４１と、第２金属部３４２と、第１線材部３４３と、第２線材部３４４とを有している。第１金属部３４１及び第２金属部３４２は、略Ｌ字形に形成され、基体３１に内蔵されている。第１金属部３４１及び第２金属部３４２は、基体３１により被覆されている。第１金属部３４１の一端と第２金属部３４２の一端とは、互いに接合されて測温接点３４ｃを形成している。   The thermocouple 34 is a temperature detecting unit that detects the temperature of the base 31, and includes a first metal part 341, a second metal part 342, a first wire part 343, and a second wire part 344. . The first metal part 341 and the second metal part 342 are formed in a substantially L shape, and are built in the base 31. The first metal part 341 and the second metal part 342 are covered with the base 31. One end of the first metal part 341 and one end of the second metal part 342 are joined to each other to form a temperature measuring contact 34c.

第１金属部３４１は、載置面３１ａと平行な方向に延伸し一端が測温接点３４ｃである第１水平部３４１ａと、第１水平部３４１ａの他端から載置面３１ａと垂直な方向に延伸して端部が基体３１から露出する第１垂直部３４１ｂとを有している。第１水平部３４１ａと第１垂直部３４１ｂとは、同一材料により一体に形成されている。第１垂直部３４１ｂの断面形状は例えば円形である。この場合、第１垂直部３４１ｂの直径を第１水平部３４１ａの幅よりも太く形成してもよい。   The first metal portion 341 extends in a direction parallel to the mounting surface 31a, and has a first horizontal portion 341a having one end serving as a temperature measuring contact 34c, and a direction perpendicular to the mounting surface 31a from the other end of the first horizontal portion 341a. And a first vertical portion 341b whose end is exposed from the base 31. The first horizontal portion 341a and the first vertical portion 341b are integrally formed of the same material. The cross-sectional shape of the first vertical portion 341b is, for example, a circle. In this case, the diameter of the first vertical part 341b may be formed larger than the width of the first horizontal part 341a.

第２金属部３４２は、載置面３１ａと平行な方向に延伸し一端が測温接点３４ｃである第２水平部３４２ａと、第２水平部３４２ａの他端から載置面３１ａと垂直な方向に延伸して端部が基体３１から露出する第２垂直部３４２ｂとを有している。第２水平部３４２ａと第２垂直部３４２ｂとは、同一材料により一体に形成されている。第２垂直部３４２ｂの断面形状は例えば円形である。この場合、第２垂直部３４２ｂの直径を第２水平部３４２ａの幅よりも太く形成してもよい。   The second metal portion 342 extends in a direction parallel to the mounting surface 31a, and has a second horizontal portion 342a having one end serving as a temperature measuring contact 34c, and a direction perpendicular to the mounting surface 31a from the other end of the second horizontal portion 342a. And a second vertical portion 342b whose end is exposed from the base 31. The second horizontal portion 342a and the second vertical portion 342b are integrally formed of the same material. The cross-sectional shape of the second vertical portion 342b is, for example, circular. In this case, the diameter of the second vertical portion 342b may be formed to be larger than the width of the second horizontal portion 342a.

図１（ｂ）では、第１水平部３４１ａと第２水平部３４２ａとが載置面３１ａの法線方向から視て一直線となるように接合されているが、これは一例である。第１水平部３４１ａと第２水平部３４２ａとは、載置面３１ａの法線方向から視て任意の角度となるように接合することができる。又、第１水平部３４１ａ及び第２水平部３４２ａは、載置面３１ａの法線方向から視て屈曲する部分や湾曲する部分を有していても構わない。   In FIG. 1B, the first horizontal portion 341a and the second horizontal portion 342a are joined so as to be straight when viewed from the normal direction of the mounting surface 31a, but this is an example. The first horizontal portion 341a and the second horizontal portion 342a can be joined at an arbitrary angle when viewed from the normal direction of the mounting surface 31a. Further, the first horizontal portion 341a and the second horizontal portion 342a may have a portion that bends or bends when viewed from the normal direction of the mounting surface 31a.

第１水平部３４１ａ及び第２水平部３４２ａは、例えば、基体３１の厚さ方向の静電電極３２及び発熱体３３とは異なる位置（基体３１内の異なる平面）に配置することができる。   The first horizontal portion 341a and the second horizontal portion 342a can be arranged, for example, at a different position (a different plane in the base 31) from the electrostatic electrode 32 and the heating element 33 in the thickness direction of the base 31.

なお、ここでいう載置面３１ａと平行や載置面３１ａと垂直は、載置面３１ａと厳密に平行や載置面３１ａと厳密に垂直である場合のみではなく、載置面３１ａとおおよそ平行や載置面３１ａとおおよそ垂直である場合も含むものとする。載置面３１ａとおおよそ平行とは、載置面３１ａと厳密に平行な場合から±１０度程度ずれたものも含む意味合いである。同様に、載置面３１ａとおおよそ垂直とは、載置面３１ａと厳密に垂直な場合から±１０度程度ずれたものも含む意味合いである。   Note that the term “parallel to the mounting surface 31a or perpendicular to the mounting surface 31a” here means not only the case where the surface is strictly parallel to or strictly perpendicular to the mounting surface 31a, but also approximately the same as the mounting surface 31a. It is also assumed that the case is parallel or approximately perpendicular to the mounting surface 31a. The term "approximately parallel to the mounting surface 31a" means that the position is approximately ± 10 degrees deviated from the case where the surface is strictly parallel to the mounting surface 31a. Similarly, the term “approximately perpendicular to the mounting surface 31 a” means a position that is displaced by about ± 10 degrees from a case where the mounting surface 31 a is strictly perpendicular to the mounting surface 31 a.

第１線材部３４３は、一端が基体３１の内部で第１金属部３４１の他端（第１垂直部３４１ｂの端部）と接合され、他端が基体３１の外部に延伸している。基体３１の外部に延伸する第１線材部３４３は、接着層２０を通ってベースプレート１０に設けられた貫通孔１０ｘに挿入され、他端がベースプレート１０の他方の面１０ｂ側に配置された制御部４０と電気的に接続されている。なお、貫通孔１０ｘの内壁と第１線材部３４３との間に絶縁材を配置することが好ましい。   One end of the first wire portion 343 is joined to the other end of the first metal portion 341 (the end of the first vertical portion 341 b) inside the base 31, and the other end extends outside the base 31. The first wire portion 343 extending to the outside of the base 31 is inserted into the through hole 10x provided in the base plate 10 through the adhesive layer 20, and the other end of the control portion is disposed on the other surface 10b side of the base plate 10. 40 and is electrically connected. In addition, it is preferable to arrange an insulating material between the inner wall of the through hole 10x and the first wire portion 343.

第２線材部３４４は、一端が基体３１の内部で第２金属部３４２の他端（第２垂直部３４２ｂの端部）と接合され、他端が基体３１の外部に延伸している。基体３１の外部に延伸する第２線材部３４４は、接着層２０を通ってベースプレート１０に設けられた貫通孔１０ｙに挿入され、他端がベースプレート１０の他方の面１０ｂ側に配置された制御部４０と電気的に接続されている。なお、貫通孔１０ｙの内壁と第２線材部３４４との間に絶縁材を配置することが好ましい。   One end of the second wire portion 344 is joined to the other end of the second metal portion 342 (the end of the second vertical portion 342 b) inside the base 31, and the other end extends outside the base 31. The second wire portion 344 extending to the outside of the base 31 is inserted into the through hole 10y provided in the base plate 10 through the adhesive layer 20, and the other end of the control portion is disposed on the other surface 10b side of the base plate 10. 40 and is electrically connected. It is preferable that an insulating material be disposed between the inner wall of the through hole 10y and the second wire portion 344.

第１金属部３４１と第１線材部３４３とは、所定の抵抗温度係数を有する同一材料（第１の材料）から形成されている。又、第２金属部３４２と第２線材部３４４とは、第１金属部３４１と第１線材部３４３とは異なる抵抗温度係数を有する同一材料（第２の材料）から形成されている。これにより、熱電対３４は、第１金属部３４１と第２金属部３４２との接続部である測温接点３４ｃと、第１線材部３４３の他端及び第２線材部３４４の他端との温度差により熱起電力を発生することができる。   The first metal part 341 and the first wire part 343 are formed of the same material (first material) having a predetermined temperature coefficient of resistance. Further, the second metal part 342 and the second wire part 344 are formed of the same material (second material) having a different temperature coefficient of resistance than the first metal part 341 and the first wire part 343. Thereby, the thermocouple 34 is connected between the temperature measuring contact 34 c, which is a connection part between the first metal part 341 and the second metal part 342, and the other end of the first wire part 343 and the other end of the second wire part 344. A thermoelectromotive force can be generated by the temperature difference.

第１金属部３４１及び第１線材部３４３の材料、及び第２金属部３４２及び第２線材部３４４の材料は、基体３１の焼成温度（１５００℃程度）よりも融点が高い導電材料であることが好ましい。これにより、第１金属部３４１及び第２金属部３４２を基体３１と同時焼成することが可能となる。基体３１の焼成温度よりも融点が高い導電材料としては、例えば、下記の材料が挙げられる。   The material of the first metal portion 341 and the first wire portion 343 and the material of the second metal portion 342 and the second wire portion 344 are conductive materials having a melting point higher than the firing temperature of the base 31 (about 1500 ° C.). Is preferred. Thereby, the first metal portion 341 and the second metal portion 342 can be simultaneously fired with the base 31. Examples of the conductive material having a melting point higher than the firing temperature of the base 31 include the following materials.

第１金属部３４１及び第１線材部３４３の材料としては、例えば、タングステン（Ｗ）とレニウム（Ｒｅ）との合金（Ｒｅ５重量％）を用いることができる。第２金属部３４２及び第２線材部３４４の材料としては、例えば、タングステン（Ｗ）とレニウム（Ｒｅ）との合金（Ｒｅ２６重量％）を用いることができる。   As a material of the first metal part 341 and the first wire part 343, for example, an alloy (Re5% by weight) of tungsten (W) and rhenium (Re) can be used. As a material of the second metal part 342 and the second wire part 344, for example, an alloy of tungsten (W) and rhenium (Re) (26% by weight of Re) can be used.

第１金属部３４１及び第１線材部３４３の材料として、例えば、白金（Ｐｔ）とロジウム（Ｒｈ）との合金（Ｒｈ６重量％）を用いてもよい。第２金属部３４２及び第２線材部３４４の材料として、例えば、白金（Ｐｔ）とロジウム（Ｒｈ）との合金（Ｒｈ３０重量％）を用いてもよい。   As a material of the first metal part 341 and the first wire part 343, for example, an alloy (Rh 6% by weight) of platinum (Pt) and rhodium (Rh) may be used. As a material of the second metal part 342 and the second wire part 344, for example, an alloy of platinum (Pt) and rhodium (Rh) (Rh 30% by weight) may be used.

なお、図１では基板固定装置１が１つの熱電対３４を有する例を図示しているが、基板固定装置１は複数の熱電対３４を有してもよい。これにより、基体３１の温度制御を高精度で行うことができる。その場合、基体３１の厚さ方向の異なる位置に熱電対３４が配置されてもよい。   Although FIG. 1 illustrates an example in which the substrate fixing device 1 includes one thermocouple 34, the substrate fixing device 1 may include a plurality of thermocouples 34. Thus, the temperature of the base 31 can be controlled with high accuracy. In that case, the thermocouples 34 may be arranged at different positions in the thickness direction of the base 31.

制御部４０は、熱電対３４から得られる熱起電力に基づいて基体３１の温度を算出し、発熱体３３に印加する電圧を制御して、基体３１の載置面３１ａを所定の温度に調整する機能を有している。制御部４０は、例えば、ＣＰＵ（Central Processing Unit）、ＲＯＭ（Read Only Memory）、ＲＡＭ（Random Access Memory）等を含む構成とすることができる。制御部４０は、例えば、基板上に実装されてベースプレート１０に固定することができる。   The control unit 40 calculates the temperature of the base 31 based on the thermoelectromotive force obtained from the thermocouple 34, controls the voltage applied to the heating element 33, and adjusts the mounting surface 31a of the base 31 to a predetermined temperature. It has the function to do. The control unit 40 can be configured to include, for example, a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), and the like. The control unit 40 can be mounted on a substrate and fixed to the base plate 10, for example.

［基板固定装置の製造方法］
図２及び図３は、第１の実施の形態に係る基板固定装置の製造工程を例示する図である。図２及び図３を参照しながら、基板固定装置１の製造工程について説明する。 [Manufacturing method of substrate fixing device]
2 and 3 are diagrams illustrating a manufacturing process of the substrate fixing device according to the first embodiment. The manufacturing process of the substrate fixing device 1 will be described with reference to FIGS.

まず、図２（ａ）に示す工程では、セラミック粉末に溶媒やバインダーを混ぜて複数枚（ここでは一例として５枚）のセラミックグリーンシート３１１、３１２、３１３、３１４、及び３１５を作製する。そして、セラミックグリーンシート３１１、３１２、及び３１３の熱電対３４を形成する部分に貫通孔を形成する。なお、セラミックグリーンシート３１１、３１２、及び３１３に形成する貫通孔は、例えば、焼成後の径が５０〜３００μｍ程度になるように形成することができる。   First, in the step shown in FIG. 2A, a plurality of (here, five as an example) ceramic green sheets 311, 312, 313, 314, and 315 are produced by mixing a solvent and a binder with ceramic powder. Then, through holes are formed in the portions of the ceramic green sheets 311, 312, and 313 where the thermocouples 34 are to be formed. The through holes formed in the ceramic green sheets 311, 312, and 313 can be formed, for example, so that the diameter after firing becomes about 50 to 300 μm.

そして、セラミックグリーンシート３１２の一方の面に焼成後に発熱体３３となる金属ペースト３３Ｐを、セラミックグリーンシート３１４の一方の面に焼成後に静電電極３２となる金属ペースト３２Ｐを図１のパターンになるように形成する。又、セラミックグリーンシート３１１及び３１２の貫通孔内、並びにセラミックグリーンシート３１３の一方の面及び貫通孔内に、焼成後に第１金属部３４１及び第２金属部３４２となる金属ペースト３４１Ｐ及び３４２Ｐを図１のパターンになるように形成する。   Then, a metal paste 33P, which becomes the heating element 33 after firing on one surface of the ceramic green sheet 312, and a metal paste 32P, which becomes the electrostatic electrode 32 after firing on one surface of the ceramic green sheet 314, have the pattern shown in FIG. It is formed as follows. Also, in the through holes of the ceramic green sheets 311 and 312, and on one surface and the through holes of the ceramic green sheet 313, metal pastes 341P and 342P that become the first metal part 341 and the second metal part 342 after firing are shown. 1 is formed.

金属ペースト３２Ｐ、３３Ｐ、３４１Ｐ、及び３４２Ｐは、例えば、スクリーン印刷法により形成できる。なお、セラミックグリーンシート３１３の一方の面に形成する金属ペースト３４１Ｐ及び３４２Ｐは、例えば、焼成後の厚さが１０〜３０μｍ程度、焼成後の幅が５０〜３００μｍ程度になるように形成することができる。   The metal pastes 32P, 33P, 341P, and 342P can be formed by, for example, a screen printing method. The metal pastes 341P and 342P formed on one surface of the ceramic green sheet 313 may be formed so that, for example, the thickness after firing is about 10 to 30 μm and the width after firing is about 50 to 300 μm. it can.

次に、図２（ｂ）に示す工程では、図２（ａ）に示す工程で作製したセラミックグリーンシート３１１、３１２、３１３、３１４、及び３１５を順次積層した積層体を作製する。   Next, in the step shown in FIG. 2B, a laminated body in which the ceramic green sheets 311, 312, 313, 314, and 315 produced in the step shown in FIG.

次に、図２（ｃ）に示す工程では、第１線材部３４３及び第２線材部３４４を準備する。そして、図２（ｂ）に示す積層体のセラミックグリーンシート３１１の貫通孔内に充填された金属ペースト３４１Ｐに第１線材部３４３の一端を、セラミックグリーンシート３１１の貫通孔内に充填された金属ペースト３４２Ｐに第２線材部３４４の一端を挿入する。第１線材部３４３及び第２線材部３４４の線径は、例えば、５０〜３００μｍ程度とすることができる。   Next, in a step shown in FIG. 2C, a first wire portion 343 and a second wire portion 344 are prepared. Then, one end of the first wire rod portion 343 is added to the metal paste 341P filled in the through hole of the ceramic green sheet 311 of the laminated body shown in FIG. One end of the second wire portion 344 is inserted into the paste 342P. The wire diameter of the first wire portion 343 and the second wire portion 344 can be, for example, about 50 to 300 μm.

次に、図３（ａ）に示す工程では、図２（ｃ）に示す積層体を焼成することにより、セラミックグリーンシート３１１、３１２、３１３、３１４、及び３１５が一体化して基体３１となる。又、金属ペースト３２Ｐ、３３Ｐ、３４１Ｐ、及び３４２Ｐから、静電電極３２、発熱体３３、第１金属部３４１、及び第２金属部３４２が形成される。又、第１金属部３４１と第１線材部３４３とが接合され、第２金属部３４２と第２線材部３４４とが接合される。以上により、静電チャック３０が完成する。積層体の焼成は、例えば、常圧で行うことができる。なお、焼成後の静電チャック３０の体積は、焼成前に比べて１０数％程度収縮する。   Next, in the step shown in FIG. 3A, the ceramic green sheets 311, 312, 313, 314, and 315 are integrated to form the base 31 by firing the laminate shown in FIG. In addition, the electrostatic electrode 32, the heating element 33, the first metal part 341, and the second metal part 342 are formed from the metal pastes 32P, 33P, 341P, and 342P. Further, the first metal part 341 and the first wire part 343 are joined, and the second metal part 342 and the second wire part 344 are joined. Thus, the electrostatic chuck 30 is completed. The firing of the laminate can be performed, for example, at normal pressure. It should be noted that the volume of the electrostatic chuck 30 after firing shrinks by about 10% or more compared to before firing.

次に、図３（ｂ）に示す工程では、貫通孔１０ｘ及び１０ｙが形成されたベースプレート１０を準備し、ベースプレート１０の一方の面１０ａに接着層２０（未硬化）を形成する。そして、図３（ａ）で完成した静電チャック３０の第１線材部３４３を貫通孔１０ｘに、第２線材部３４４を貫通孔１０ｙに挿入しながら、接着層２０を介して、ベースプレート１０の一方の面１０ａに静電チャック３０を配置し、接着層２０を硬化させる。   Next, in the step shown in FIG. 3B, a base plate 10 in which the through holes 10x and 10y are formed is prepared, and an adhesive layer 20 (uncured) is formed on one surface 10a of the base plate 10. Then, the first wire portion 343 of the electrostatic chuck 30 completed in FIG. 3A is inserted into the through hole 10x, and the second wire portion 344 is inserted into the through hole 10y. The electrostatic chuck 30 is arranged on one surface 10a, and the adhesive layer 20 is cured.

次に、図３（ｃ）に示す工程では、例えば図示しない基板上に実装された制御部４０を、ベースプレート１０の他方の面１０ｂ側に固定する。この際、第１線材部３４３の他端及び第２線材部３４４の他端を、はんだ等を用いて、制御部４０と電気的に接続する。これにより、ベースプレート１０の一方の面１０ａに接着層２０を介して静電チャック３０が搭載された基板固定装置１が完成する。   Next, in the step shown in FIG. 3C, for example, the control unit 40 mounted on a substrate (not shown) is fixed to the other surface 10b side of the base plate 10. At this time, the other end of the first wire portion 343 and the other end of the second wire portion 344 are electrically connected to the control unit 40 using solder or the like. Thereby, the substrate fixing device 1 in which the electrostatic chuck 30 is mounted on one surface 10a of the base plate 10 via the adhesive layer 20 is completed.

ところで、従来の基板固定装置において静電チャックの基体内に熱電対を内蔵する場合、例えば、静電チャックから露出する熱電対の端部にパッドを設け、パッドに熱電対とは異なる材料からなる線材（銅線等）をはんだ付けして静電チャック外に引き出していた。つまり、従来の基板固定装置では、基板固定装置１の第１線材部３４３及び第２線材部３４４に相当する部分が、熱電対とは異なる材料からなる線材（銅線等）により構成されていた。   By the way, when a thermocouple is built in the base of the electrostatic chuck in the conventional substrate fixing device, for example, a pad is provided at an end of the thermocouple exposed from the electrostatic chuck, and the pad is made of a material different from the thermocouple. Wires (such as copper wires) were soldered and pulled out of the electrostatic chuck. That is, in the conventional substrate fixing device, portions corresponding to the first wire portion 343 and the second wire portion 344 of the substrate fixing device 1 are formed of a wire (such as a copper wire) made of a material different from the thermocouple. .

このように、従来の基板固定装置では、温度分布の少ない静電チャックの基体内のみに熱電対を設けていたため、熱電対に温度差が生じ難く、大きな熱起電力が得られなかった。   As described above, in the conventional substrate fixing apparatus, since the thermocouple is provided only in the base of the electrostatic chuck having a small temperature distribution, a temperature difference hardly occurs in the thermocouple, and a large thermoelectromotive force cannot be obtained.

これに対して、基板固定装置１では、第１線材部３４３及び第２線材部３４４も含めた部分が熱電対３４として機能する。すなわち、基板固定装置１では、全体として温度分布の大きい静電チャック３０の基体３１内及びベースプレート１０内に熱電対３４が配置されているため、熱電対に温度差が生じ易く、大きな熱起電力が得られる。その結果、ノイズ耐性が向上するため、熱電対３４を用いた精度のよい温度測定が可能となる。なお、図４は、基板固定装置１における熱電対の温度差と熱起電力との関係の一例を示している。図４より、温度差が大きくなるほど大きな熱起電力が得られることが確認できる。   On the other hand, in the substrate fixing device 1, a portion including the first wire portion 343 and the second wire portion 344 functions as the thermocouple 34. That is, in the substrate fixing device 1, since the thermocouples 34 are arranged in the base 31 and the base plate 10 of the electrostatic chuck 30 having a large temperature distribution as a whole, a temperature difference easily occurs in the thermocouples, and a large thermoelectromotive force is generated. Is obtained. As a result, since the noise resistance is improved, accurate temperature measurement using the thermocouple 34 can be performed. FIG. 4 shows an example of the relationship between the temperature difference between the thermocouples in the substrate fixing device 1 and the thermoelectromotive force. From FIG. 4, it can be confirmed that the larger the temperature difference is, the larger the thermoelectromotive force is obtained.

又、基板固定装置１では、第１線材部３４３及び第２線材部３４４をベースプレート１０の底面近傍まで引き出して制御部４０と直接接続しているため、熱起電力の補正を行う必要がない。この点も、熱電対３４を用いた温度測定の精度向上に寄与している。   Further, in the substrate fixing device 1, since the first wire portion 343 and the second wire portion 344 are pulled out to near the bottom surface of the base plate 10 and are directly connected to the control unit 40, it is not necessary to correct the thermoelectromotive force. This also contributes to an improvement in the accuracy of temperature measurement using the thermocouple 34.

又、基板固定装置１では、静電チャック３０の基体３１と熱電対３４とを同時焼成により形成するため、製造工程の簡略化が可能となる。   Further, in the substrate fixing device 1, since the base 31 and the thermocouple 34 of the electrostatic chuck 30 are formed by simultaneous firing, the manufacturing process can be simplified.

又、基板固定装置１では、第１金属部３４１と第１線材部３４３、及び第２金属部３４２と第２線材部３４４を、基体３１との同時焼成により直接接合する。従って、従来の基板固定装置のように、これらの接合にパッドを用いる必要がないため、基体３１内に熱電対３４を高密度に配置することができる。又、基体に溝を設けて市販の熱電対を挿入する構造の周知の基板固定装置と比較した場合も、基体３１内に熱電対３４を高密度に配置することができる。   In the substrate fixing device 1, the first metal part 341 and the first wire part 343, and the second metal part 342 and the second wire part 344 are directly joined to the base 31 by simultaneous firing. Therefore, unlike the conventional substrate fixing device, it is not necessary to use pads for these bondings, so that the thermocouples 34 can be arranged in the base 31 at high density. Also, when compared with a well-known substrate fixing device having a structure in which a groove is formed in the base and a commercially available thermocouple is inserted, the thermocouples 34 can be arranged in the base 31 at high density.

なお、基板固定装置１を完成品として出荷することができるが、図３（ａ）に示す静電チャック３０を完成品として出荷してもよい。この場合には、静電チャック３０を入手した者が、必要なときに図３（ｂ）及び図３（ｃ）の工程を実行することで、基板固定装置１を得ることができる。   Although the substrate fixing device 1 can be shipped as a finished product, the electrostatic chuck 30 shown in FIG. 3A may be shipped as a finished product. In this case, the person who has obtained the electrostatic chuck 30 can obtain the substrate fixing device 1 by executing the steps of FIGS. 3B and 3C when necessary.

〈第１の実施の形態の変形例１〉
第１の実施の形態の変形例１では、制御部を有していない基板固定装置の例を示す。なお、第１の実施の形態の変形例１において、既に説明した実施の形態と同一構成部についての説明は省略する場合がある。 <Modification Example 1 of First Embodiment>
In Modification Example 1 of the first embodiment, an example of a substrate fixing device having no control unit will be described. In the first modification of the first embodiment, the description of the same components as those of the embodiment described above may be omitted.

図５は、第１の実施の形態の変形例１に係る基板固定装置を簡略化して例示する断面図である。   FIG. 5 is a simplified cross-sectional view of a substrate fixing device according to a first modification of the first embodiment.

図５を参照するに、基板固定装置１Ａは、制御部４０を有していない点が、基板固定装置１（図１参照）と相違する。   Referring to FIG. 5, the substrate fixing device 1A is different from the substrate fixing device 1 (see FIG. 1) in not having the control unit 40.

基板固定装置１Ａでは、第１線材部３４３及び第２線材部３４４の第１金属部３４１及び第２金属部３４２と接合されていない側の端部（第１線材部３４３の他端及び第２線材部３４４の他端）がベースプレート１０の他方の面１０ｂから突出している。ベースプレート１０の他方の面１０ｂから突出する第１線材部３４３及び第２線材部３４４の端部は、必要なときに必要な位置で制御部と電気的に接続することができる。   In the substrate fixing device 1A, the ends of the first wire portion 343 and the second wire portion 344 that are not joined to the first metal portion 341 and the second metal portion 342 (the other end of the first wire portion 343 and the second wire portion 344). The other end of the wire portion 344 protrudes from the other surface 10b of the base plate 10. The ends of the first wire portion 343 and the second wire portion 344 protruding from the other surface 10b of the base plate 10 can be electrically connected to the control unit at a required position when necessary.

このように、熱電対３４から得られる熱起電力に基づいて基体３１の温度を算出し、発熱体３３に印加する電圧を制御する制御部を基板固定装置１Ａと別体としてもよい。   As described above, the control unit that calculates the temperature of the base 31 based on the thermoelectromotive force obtained from the thermocouple 34 and controls the voltage applied to the heating element 33 may be provided separately from the substrate fixing device 1A.

以上、好ましい実施の形態等について詳説したが、上述した実施の形態等に制限されることはなく、特許請求の範囲に記載された範囲を逸脱することなく、上述した実施の形態等に種々の変形及び置換を加えることができる。   As described above, the preferred embodiments and the like have been described in detail. However, the present invention is not limited to the above-described embodiments and the like, and various modifications may be made to the above-described embodiments and the like without departing from the scope described in the claims. Variations and substitutions can be made.

例えば、本発明に係る基板固定装置の吸着対象物としては、ウェハ（シリコンウエハ等）以外に、液晶パネル等の製造工程で使用されるガラス基板等を例示することができる。   For example, as an object to be adsorbed by the substrate fixing device according to the present invention, a glass substrate used in a manufacturing process of a liquid crystal panel or the like can be exemplified in addition to a wafer (eg, a silicon wafer).

１、１Ａ 基板固定装置
１０ ベースプレート
１０ｘ、１０ｙ 貫通孔
２０ 接着層
３０ 静電チャック
３１ 基体
３１ａ 載置面
３２ 静電電極
３２Ｐ、３３Ｐ、３４１Ｐ、３４２Ｐ 金属ペースト
３３ 発熱体
３４ 熱電対
３４ｃ 測温接点
４０ 制御部
３１１、３１２、３１３、３１４、３１５ セラミックグリーンシート
３４１ 第１金属部
３４１ａ 第１水平部
３４１ｂ 第１垂直部
３４２ 第２金属部
３４２ａ 第２水平部
３４２ｂ 第２垂直部
３４３ 第１線材部
３４４ 第２線材部 DESCRIPTION OF SYMBOLS 1, 1A Board fixing device 10 Base plate 10x, 10y Through hole 20 Adhesive layer 30 Electrostatic chuck 31 Base 31a Mounting surface 32 Electrostatic electrodes 32P, 33P, 341P, 342P Metal paste 33 Heating element 34 Thermocouple 34c Temperature measuring contact 40 Control parts 311, 312, 313, 314, 315 Ceramic green sheet 341 First metal part 341 a First horizontal part 341 b First vertical part 342 Second metal part 342 a Second horizontal part 342 b Second vertical part 343 First wire part 344 2nd wire section

Claims (7)

吸着対象物を吸着保持する載置面を備えた基体と、
前記基体の温度を検出する熱電対と、を有し、
前記熱電対は、
前記基体の内部に設けられ、一端同士が接合されて測温接点を形成する第１金属部及び第２金属部と、
一端が前記基体の内部で前記第１金属部の他端と接合され、他端が前記基体の外部に延伸する第１線材部と、
一端が前記基体の内部で前記第２金属部の他端と接合され、他端が前記基体の外部に延伸する第２線材部と、を備え、
前記第１金属部と前記第１線材部とは第１の材料から形成され、
前記第２金属部と前記第２線材部とは前記第１の材料とは異なる第２の材料から形成されている静電チャック。 A base having a mounting surface for holding the suction target by suction;
A thermocouple for detecting the temperature of the substrate,
The thermocouple is
A first metal part and a second metal part which are provided inside the base body and one end of which is joined to form a temperature measuring contact;
A first wire portion having one end joined to the other end of the first metal portion inside the base, and the other end extending to the outside of the base;
A second wire portion having one end joined to the other end of the second metal portion inside the base, and the other end extending to the outside of the base.
The first metal portion and the first wire portion are formed from a first material,
The electrostatic chuck, wherein the second metal portion and the second wire portion are formed from a second material different from the first material. 前記第１金属部及び前記第２金属部は、前記基体により被覆されている請求項１に記載の静電チャック。   The electrostatic chuck according to claim 1, wherein the first metal part and the second metal part are covered with the base. 前記第１金属部は、前記載置面と平行な方向に延伸し一端が前記測温接点である第１水平部と、前記第１水平部の他端から前記載置面と垂直な方向に延伸して端部が前記基体から露出する第１垂直部と、を有し、
前記第２金属部は、前記載置面と平行な方向に延伸し一端が前記測温接点である第２水平部と、前記第２水平部の他端から前記載置面と垂直な方向に延伸して端部が前記基体から露出する第２垂直部と、を有し、
前記第１垂直部の前記端部が前記第１線材部と接合され、前記第２垂直部の前記端部が前記第２線材部と接合されている請求項１又は２に記載の静電チャック。 The first metal portion extends in a direction parallel to the mounting surface, the first horizontal portion having one end serving as the temperature measurement contact, and a direction perpendicular to the mounting surface from the other end of the first horizontal portion. A first vertical portion that is extended and an end is exposed from the base;
The second metal portion extends in a direction parallel to the mounting surface, the second horizontal portion having one end serving as the temperature measuring contact, and a direction perpendicular to the mounting surface from the other end of the second horizontal portion. A second vertical portion that is extended and an end is exposed from the base,
The electrostatic chuck according to claim 1, wherein the end of the first vertical portion is joined to the first wire portion, and the end of the second vertical portion is joined to the second wire portion. 4. . 前記基体は、電圧を印加することで前記吸着対象物との間にクーロン力を発生させる静電電極と、電圧を印加することで発熱する発熱体と、を内蔵し、
前記第１水平部及び前記第２水平部は、前記基体の厚さ方向の前記静電電極及び前記発熱体とは異なる位置に配置されている請求項３に記載の静電チャック。 The base includes an electrostatic electrode that generates Coulomb force between the object to be attracted by applying a voltage, and a heating element that generates heat by applying a voltage,
4. The electrostatic chuck according to claim 3, wherein the first horizontal portion and the second horizontal portion are arranged at positions different from the electrostatic electrodes and the heating element in a thickness direction of the base. 5. 前記第１の材料及び前記第２の材料は、前記基体の焼成温度よりも融点が高い導電材料である請求項１乃至４の何れか一項に記載の静電チャック。   The electrostatic chuck according to claim 1, wherein the first material and the second material are conductive materials having a melting point higher than a firing temperature of the base. ベースプレートと、
前記ベースプレートの一方の面に搭載された請求項１乃至５の何れか一項に記載の静電チャックと、を有し、
前記第１線材部は、前記ベースプレートに設けられた第１貫通孔に挿入され、他端が前記ベースプレートの他方の面から露出し、
前記第２線材部は、前記ベースプレートに設けられた第２貫通孔に挿入され、他端が前記ベースプレートの他方の面から露出している基板固定装置。 A base plate,
The electrostatic chuck according to any one of claims 1 to 5, mounted on one surface of the base plate,
The first wire portion is inserted into a first through hole provided in the base plate, and the other end is exposed from the other surface of the base plate,
The substrate fixing device, wherein the second wire portion is inserted into a second through hole provided in the base plate, and the other end is exposed from the other surface of the base plate. ベースプレートと、
前記ベースプレートの一方の面に搭載された請求項１乃至５の何れか一項に記載の静電チャックと、
前記熱電対から得られる熱起電力に基づいて前記基体の温度を算出する制御部と、を有し、
前記第１線材部は、前記ベースプレートに設けられた第１貫通孔に挿入され、他端が前記制御部と電気的に接続され、
前記第２線材部は、前記ベースプレートに設けられた第２貫通孔に挿入され、他端が前記制御部と電気的に接続されている基板固定装置。 A base plate,
The electrostatic chuck according to any one of claims 1 to 5, which is mounted on one surface of the base plate.
A control unit that calculates the temperature of the base based on the thermoelectromotive force obtained from the thermocouple,
The first wire section is inserted into a first through hole provided in the base plate, and the other end is electrically connected to the control section,
The substrate fixing device, wherein the second wire portion is inserted into a second through hole provided in the base plate, and the other end is electrically connected to the control portion.
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US20190393068A1 (en) 2019-12-26
US10957574B2 (en) 2021-03-23

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