JP2019167267A - Die for growing single crystal by efg method, method for growing single crystal by efg method and single crystal grown by efg method - Google Patents

Abstract

To improve the uniformity of impurity concentration of a grown single crystal.SOLUTION: A die 1 for growing a single crystal by an EFG method comprises: a lower surface 2 immersed in a raw material melt 12 having added impurities; a rectangular upper surface 5 facing a seed crystal 15 and having a long side 3 and a short side 4; and a plurality of slit parts 6 extended from the lower surface 2 to the upper surface 5 and raising a raw material melt 12 from the lower surface 2 to the upper surface 5. Since the longitudinal directions 7l of the openings 7 on the upper surface 5 of the plurality of slit parts 6 are parallel to each other and are not parallel to the long side 3 of the upper surface 5, an interval δ between the openings 7 of the slit parts 6 adjacent to each other is shorter than when the longitudinal directions 7l of the openings 7 on the upper surface 5 of the slit parts 6 are parallel to the long side 3 of the upper surface 5 in the total area of the openings 7 of the slit parts 6. Since segregation of impurities between the slit parts 6 hardly occurs, the uniformity of impurity concentration of a grown single crystal 14 can be improved.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a die for growing a single crystal by an EFG method, a method for growing a single crystal by an EFG method, and a single crystal by an EFG method.

  In the growth of a single crystal by an EFG (Edge-defined Film-fed Growth) method, the shape of the cross section perpendicular to the growth direction of the single crystal to be grown is defined by the shape of the upper surface of the single crystal growth die. Single crystals are often used after being processed into a thin plate shape as a substrate. When a single crystal having a rectangular cross section is grown with the shape of the upper surface of the die for growing a single crystal being a rectangle, processing loss when processing the single crystal into a substrate after the growth can be greatly suppressed. For this reason, the EFG method is used for growing various single crystals.

  For example, in Patent Document 1, in order to reduce processing loss, a thick plate-like single crystal having a thickness of 11 mm or more is grown, and a plurality of thin plate-like substrates are formed by slicing from a single thick plate-like single crystal. A manufacturing method has been proposed. In the die for growing a single crystal in Patent Document 1, a plurality of slits are provided in which the longitudinal direction of the opening of the slit on the upper surface of the die is parallel to the long side of the rectangular upper surface of the die.

  Incidentally, impurities may be added to the single crystal for the purpose of imparting specific characteristics such as semiconductor characteristics and fluorescence characteristics to the substrate. In order to make the imparted characteristic effect uniform in the substrate, it is desirable that the added impurities are uniformly distributed in the single crystal. However, as described in Non-Patent Document 1, it is known that the impurity concentration of a single crystal grown according to the distance from the slit varies. Therefore, it is conceivable to grow a single crystal by using a die having a plurality of slits provided on the upper surface and shortening the distance between adjacent slits as in the technique of Patent Document 1 described above.

Japanese Patent No. 5891028

Watanabe et al., “Dopant segregation of β-Ga2O3 single crystal by EFG method”, 63rd JSAP Spring Meeting, 2016 (Tokyo Institute of Technology, Ookayama Campus), JSAP, 2016 p.12-013

  However, in the technique as described in Patent Document 1 above, the uniformity of the impurity concentration of the grown single crystal is insufficient, and improvement is desired.

  Accordingly, the present invention provides a die for growing a single crystal by the EFG method, a single crystal growing method by the EFG method, and a single crystal by the EFG method that can improve the uniformity of the impurity concentration of the grown single crystal. Objective.

  The present invention is a die for growing a single crystal by the EFG method, and is a lower surface immersed in a raw material melt to which impurities are added, a seed crystal, a long side and a short side shorter than the long side. Each having a rectangular upper surface and a plurality of slit portions extending from the lower surface to the upper surface and raising the raw material melt from the lower surface to the upper surface, each in the longitudinal direction of the openings on the upper surfaces of the plurality of slit portions Are dies for single crystal growth by the EFG method which are parallel to each other and non-parallel to the long side of the upper surface.

  According to this configuration, in the die for growing a single crystal by the EFG method, the lower surface immersed in the raw material melt to which the impurity is added, the long side and the short side shorter than the long side are opposed to the seed crystal. Each having a rectangular upper surface and a plurality of slit portions extending from the lower surface to the upper surface and raising the raw material melt from the lower surface to the upper surface, each in the longitudinal direction of the openings on the upper surfaces of the plurality of slit portions Are parallel to each other and non-parallel to the long side of the upper surface. Therefore, in the total area of the opening of the same slit, the longitudinal direction of the opening on the upper surface of the slit is relative to the long side of the upper surface. The spacing between adjacent slits is shorter than when they are parallel to each other, and segregation of impurities between the slits is less likely to occur. Can be improved .

  In this case, each of the longitudinal directions of the openings on the upper surfaces of the plurality of slit portions is preferably parallel to the short sides of the upper surface.

  According to this configuration, each of the longitudinal directions of the openings on the upper surfaces of the plurality of slit portions is parallel to the short side of the upper surface, so that each of the longitudinal directions of the openings on the upper surface of the slit portions is the upper surface. As compared with the case where the slits are parallel to the long side, the interval between the adjacent slit portions is shortened, and the uniformity of the impurity concentration of the grown single crystal can be improved.

  Moreover, it is preferable that the distance from the outer edge part of the upper surface of the opening part in the upper surface of the slit part where the opening part on the upper surface is closest to the outer edge part of the upper surface among the plurality of slit parts is 2 mm or less. is there.

  According to this configuration, the distance from the outer edge portion of the opening on the upper surface of the slit portion where the opening portion on the upper surface is closest to the outer edge portion of the upper surface among the plurality of slit portions is 2 mm or less, The region where the impurity concentration of the grown single crystal becomes uniform can be enlarged.

  In addition, it is preferable that the distance between the center lines along the longitudinal direction of the opening on the upper surface of the adjacent slits is 2 mm or less.

  According to this configuration, since the distance between the center lines along the longitudinal direction of the opening on the upper surface of the slits adjacent to each other is 2 mm or less, the uniformity of the impurity concentration of the grown single crystal is further improved. Can be made.

  In addition, each of the lengths of the openings in the short direction on the upper surfaces of the plurality of slit portions is preferably 2 mm or less.

  According to this configuration, each of the lengths in the short direction of the openings on the upper surfaces of the plurality of slit portions is 2 mm or less, so that the height at which the slit portions raise the raw material melt from the lower surface to the upper surface is increased. be able to.

  On the other hand, the present invention is a method for growing a single crystal by the EFG method using the die for growing a single crystal by the EFG method of the present invention.

  According to this configuration, a single crystal with improved impurity concentration uniformity can be grown by the EFG method.

  Further, the present invention is based on the above-described EFG method according to the present invention in which the variation coefficient of the impurity concentration in a region excluding the distance of 1 mm from the outer edge of the cross section is 30% or less in the cross section perpendicular to the growth direction of the single crystal It is a single crystal by the EFG method grown by the single crystal growth method.

  According to this configuration, it is possible to provide a single crystal with improved uniformity of impurity concentration and more uniform characteristics.

  According to the die for growing a single crystal by the EFG method of the present invention, the single crystal growing method by the EFG method, and the single crystal by the EFG method, the uniformity of the impurity concentration of the grown single crystal can be improved.

It is a perspective view which shows the crucible by the EFG method which concerns on embodiment, the die | dye for single crystal growth by the EFG method, and the single crystal by the EFG method. It is a longitudinal cross-sectional view of the crucible by the EFG method of FIG. 1 and the die | dye for single crystal growth by the EFG method. It is a top view of the die for single crystal growth by the EFG method concerning an embodiment. It is a top view of the die | dye for single crystal growth by the conventional EFG method. It is a table | surface which shows the item of the die | dye for single crystal growth by the EFG method which concerns on an Example. It is a table | surface which shows the specification of the die | dye for single crystal growth by the EFG method which concerns on a comparative example. It is a graph which shows the impurity concentration of the single crystal by the EFG method which concerns on an Example. It is a graph which shows the impurity concentration of the single crystal by the EFG method which concerns on a comparative example.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The single crystal growth die by the EFG method and the single crystal growth method by the EFG method of the present embodiment are for growing, for example, a β-Ga ₂ O ₃ single crystal by the EFG method. As shown in FIGS. 1 and 2, a single crystal manufacturing apparatus 10 using an EFG method includes a crucible 11 that contains a raw material melt 12 such as a Ga ₂ O ₃ system, and a single crystal device that uses an EFG method installed in the crucible 11. A crystal growing die 1, a lid 13 covering the upper surface of the crucible 11 excluding the upper surface 5 of the die 1, a seed crystal holder 16 holding a seed crystal 15 such as a Ga ₂ O ₃ system, and a seed crystal holder 16 And a shaft 17 that supports the shaft so as to be movable up and down.

The crucible 11 is heated by a heating means (not shown), and the temperature is raised to, for example, 1800 ° C. or higher, which exceeds the melting point of β-Ga ₂ O ₃ . The solid raw material such as Ga ₂ O _{3 and the} like having an additive concentration of 0.016 mol% of the additive such as Sn contained in the crucible 11 is melted in the temperature rising process to the raw material melt 12 such as Ga ₂ O ₃ And change. The crucible 11 and the die 1 for growing a single crystal by the EFG method are made of a heat-resistant iridium metal material that can accommodate a raw material melt 12 such as a Ga ₂ O ₃ system. The lid 13 suppresses evaporation of the Ga ₂ O ₃ -based material melt 12 from the crucible 11, and further Ga ₂ O ₃ -based material melt such as a Ga ₂ O ₃ -based seed crystal 15. Twelve vapors are prevented from sticking.

A die 1 for growing a single crystal by the EFG method includes a lower surface 2 immersed in a raw material melt 12 such as Ga ₂ O ₃ to which impurities such as Sn are added, a seed crystal 15 such as Ga ₂ O _{3 and the} like. A rectangular upper surface 5 having a long side 3 and a short side 4 shorter than the long side 3, opposed to each other, extends from the lower surface 2 to the upper surface 5, and the raw material melt 12 is raised from the lower surface 2 to the upper surface 5. And a plurality of slit portions 6 to be operated. In addition, the rectangular upper surface 5 is, for example, one in which the corners of the long side 3 and the short side 4 of the upper surface 5 form an angle other than a strict 90 ° angle, or the corners are rounded. Is also included.

  As shown in FIGS. 1, 2, and 3, the opening 7 in the upper surface 5 of the plurality of slit portions 6 has a rectangular shape having a longitudinal direction 7 l and a short direction 7 s. Each of the longitudinal directions 7 l of the openings 7 on the upper surface 5 of the plurality of slit portions 6 is parallel to each other and non-parallel to the long side 3 of the upper surface 5. Specifically, each of the longitudinal directions 7 l of the openings 7 on the upper surface 5 of the plurality of slit portions 6 is parallel to the short side 4 of the upper surface 5. In addition, the opening 7 is rectangular, for example, the corner formed by the longitudinal direction 7 l and the short direction 7 s of the opening 7 forms an angle other than a strict 90 ° angle, or the corner is rounded. Is also included.

  As shown in FIG. 3, among the plurality of slit portions 6, the opening 7 on the upper surface 5 is closest to the outer edge portion 5 e of the upper surface 5. The distance α from the outer edge portion 5e is 2 mm or less. The mutual intervals β of the center lines 7c along the longitudinal direction 7l of the opening 7 on the upper surface 5 of the slit portions 6 adjacent to each other are equal and 2 mm or less. Each of the length γ in the short direction 7 s of the opening 7 on the upper surface 5 of the plurality of slit portions 6 is 2 mm or less. The distances δ between the openings 7 on the upper surface 5 of the slits 6 adjacent to each other are equal and 2 mm or less. Note that the intervals β and δ of the openings 7 of the slit portion 6 are not necessarily equal.

Hereinafter, a method for growing a single crystal by the EFG method using the die 1 for growing a single crystal by the EFG method of the present embodiment will be described. As shown in FIG. 2, the die 1 for growing a single crystal is immersed in a raw material melt 12 such as a Ga ₂ O ₃ system in which a lower surface 2 of the die 1 is housed in a crucible 11 and an impurity such as Sn is added. It is installed in the crucible 11 as described above. A raw material melt 12 such as a Ga ₂ O ₃ system ascends inside the slit portion 6 by capillary action and reaches the upper surface 5 of the die 1.

Output adjustment of a heating means (not shown) is performed so that the upper surface 5 of the die 1 has a temperature suitable for growth. As shown in FIG. 1, the shaft 17 is lowered and the seed crystal 15 such as Ga ₂ O ₃ system held by the seed crystal holder 16 and the raw material such as Ga ₂ O ₃ system reaching the upper surface 5 of the die 1. The melt 12 is brought into contact. Shaft 17 is raised, by pulling the seed crystal 15 of _Ga 2 _{O 3} system or the like in contact with the raw material melt 12 of _Ga 2 _{O 3} system, etc., along the upper surface 5 of the die 1 in the development direction D Ga ₂ A single crystal 14 such as an O ₃ system grows.

  By the single crystal growth method by the EFG method using the die 1 for single crystal growth by the EFG method of the present embodiment described above, for example, in the cross section orthogonal to the growth direction D of the single crystal 14, 1 mm from the outer edge of the cross section The single crystal 14 is grown by the EFG method in which the variation coefficient of the impurity concentration in the region excluding the distance range is 30% or less.

  According to the present embodiment, in the die 1 for growing a single crystal by the EFG method, the lower surface 2 immersed in the raw material melt 12 to which the impurity is added is opposed to the seed crystal 15, and the long side 3 and the long side A rectangular upper surface 5 having a short side 4 shorter than 3, and a plurality of slit portions 6 extending from the lower surface 2 to the upper surface 5 and raising the raw material melt 12 from the lower surface 2 to the upper surface 5, Since each of the longitudinal directions 7 l of the openings 7 on the upper surface 5 of the plurality of slit portions 6 is parallel to each other and not parallel to the long side 3 of the upper surface 5, the total of the openings 7 of the same slit portion 6 is the same. In terms of area, each of the opening portions 7 of the slit portions 6 adjacent to each other is more than in the case where each of the longitudinal directions 7 l of the opening portion 7 on the upper surface 5 of the slit portion 6 is parallel to the long side 3 of the upper surface 5. The interval δ is shortened, and impurities between the slit portions 6 are present. Since segregation hardly occurs, it is possible to improve the uniformity of the impurity concentration in the single crystal 14 is grown.

  In addition, according to the present embodiment, each of the longitudinal directions 7 l of the openings 7 on the upper surfaces 5 of the plurality of slit portions 6 is parallel to the short side 4 of the upper surface 5. The distance δ between the openings 7 of the slits 6 adjacent to each other is shorter than that in the case where each of the longitudinal directions 7 l of the openings 7 is parallel to the long side 3 of the upper surface 5. The uniformity of the impurity concentration of the single crystal 14 can be improved. Furthermore, the longitudinal direction of the opening 7 on the upper surface 5 of the slit 6 is greater than the case where each of the longitudinal directions 7 l of the opening 7 on the upper surface 5 of the slit 6 is parallel to the long side 3 of the upper surface 5. Since the length of 7 l is shortened, the die 1 is more difficult to deform and the durability of the die 1 can be improved.

  In addition, according to the present embodiment, the outer edge of the opening 7 on the upper surface 5 of the slit 6 where the opening 7 on the upper surface 5 is closest to the outer edge 5 e of the upper surface 5 among the plurality of slits 6. Since the distance α from the portion 5e is 2 mm or less, the region where the impurity concentration of the grown single crystal 14 becomes uniform can be enlarged.

  For example, as described in paragraph (0006) of Patent Document 1, each of the longitudinal directions of the openings of the plurality of slits on the upper surface of the die is parallel to the long side of the upper surface of the rectangular rectangle of the die. In this technique, warping occurs when the thickness of the plate material constituting the die is 1 mm or less, and a plate material having a thickness of 2.4 mm or more is required to manufacture the die with high accuracy. In other words, in the prior art, the plate material constituting the widest side surface of the die extending over a long distance in the direction parallel to the long side of the upper surface of the die has two locations on both ends on the short side of the upper surface of the die. Therefore, it is necessary to increase the plate thickness of the plate material because the mechanical strength of the die is low. Therefore, with the conventional technology, it is difficult to set the distance α to 2 mm or less.

  On the other hand, in the present embodiment, the plate material constituting the widest side surface of the die 1 extending over a long distance in the direction parallel to the long side 3 of the upper surface 5 of the die 1 is on the short side 4 side of the die 1. In addition to the two places at both ends, the slit portion 6 is also supported by a plate material that partitions each of the slit portions 6. That is, in this embodiment, since the support points of the plate material constituting the widest side surface of the die 1 are many and the support points are dispersed throughout the die 1, the overall mechanical strength of the die 1 is improved. The die 1 can be accurately manufactured even with a thin plate material.

  Further, according to the present embodiment, since the mutual interval β of the center lines 7c along the longitudinal direction 7l of the opening 7 on the upper surface 5 of the slits 6 adjacent to each other is 2 mm or less, the grown single crystal The uniformity of the impurity concentration of 14 can be further improved.

  With regard to the plate material that partitions each of the slit portions, in the conventional technology as described in Patent Document 1, the plate material that partitions each of the slit portions is supported only at two locations on both sides of the short side of the upper surface of the die. Since it extends over a long distance in a direction parallel to the long side of the upper surface of the die, the effect of warping on the plate material that partitions each of the slit portions is large, and the plate thickness of the plate material is set to prevent warpage. It needs to be thick. Therefore, with the conventional technique, it is difficult to set the interval β to 2 mm or less.

  On the other hand, in this embodiment, on the long side 3 side of the upper surface 5 of the die 1, the distance between the two ends of the plate material on which the plate material that partitions each of the slit portions 6 is supported is the distance between the upper surface 5 of the conventional die 1. Since the distance in the direction parallel to the short side 4 is shorter than the distance in the direction parallel to the long side 3, even if the curvature of the same curvature radius occurs, the influence is slight, and the plate material that partitions each of the slit portions 6 It is possible to reduce the plate thickness.

  In addition, according to the present embodiment, each of the lengths γ in the short direction 7 s of the openings 7 on the upper surfaces 5 of the plurality of slit portions 6 is 2 mm or less, so that the slit portions 6 lower the raw material melt 12 on the lower surface. The height to be raised from 2 to the upper surface 5 can be increased.

  Further, according to the present embodiment, the single crystal 14 with improved impurity concentration uniformity can be grown by the EFG method. Further, according to the present embodiment, it is possible to provide the single crystal 14 with improved uniformity of impurity concentration and more uniform characteristics.

  As mentioned above, although embodiment of this invention was described, this invention is implemented in various forms, without being limited to the said embodiment. For example, the shape and arrangement of the openings 7 on the upper surface 5 of the plurality of slit portions 6 can be changed as appropriate.

(Example)
The Ga ₂ O ₃ -based single crystal 14 to which Sn was added as an impurity was grown using the above-described single crystal manufacturing apparatus 10 by the EFG method and the die 1 for single crystal growth by the EFG method. The size or quantity of each part of the die 1 is as shown in FIG. The Ga ₂ O ₃ -based material melt 12 raised by the plurality of slit portions 6 formed in the single crystal growth die 1 is spread integrally on the upper surface 5 of the die 1, and the cross-sectional shape of the straight body portion A thick plate-like Ga ₂ O ₃ -based single crystal 14 having a width of about 57 mm, a thickness of about 18 mm, and a length of the straight body portion of about 112 mm grew.

  A straight body portion is cut out from the grown single crystal 14 and divided into two cross sections intersecting in the length direction (growing direction D), and each of the obtained two single crystal blocks having a thickness of about 18 mm is formed by a multi-saw. The plate was cut into 18 flat plates so that the cut surface was parallel to the crystal main surface. After each of the two single crystal blocks was cut into 18 flat plates, both sides of each flat plate were further polished to produce 36 single-crystal substrates having a thickness of 0.4 mm from 14 single crystals. .

Of the obtained 36 single crystal substrates, the Sn concentration in 32 single crystal substrates except for the four low crystallinity substrates located outside the single crystal 14 at the time of single crystal growth was SIMS (Secondary Ion Mass). Spectrometry, secondary ion mass spectrometry). That is, in the cross section orthogonal to the growth direction D of the single crystal 14, the Sn concentration as the impurity in the region excluding the range of the distance of 1 mm from the outer edge of the cross section was measured. The measurement results are shown in FIG. The horizontal axis of the graph in FIG. 7 indicates the order in the thickness direction of the single crystal substrate obtained by cutting the Ga ₂ O ₃ single crystal 14 grown in a thick plate shape in parallel with the crystal main surface. The vertical axis of the graph in FIG. 7 indicates a value obtained by dividing each measured value of the Sn concentration of 32 single crystal substrates by the average value of the Sn concentration of 32 substrates. The coefficient of variation (Cv) of 32 single crystal substrates, that is, the value obtained by dividing the standard deviation of the Sn concentration by the average value was 12.1%, which is 30% or less. That is, it can be seen that the uniformity of the impurity concentration of the single crystal 14 grown by the die 1 of the example is high.

  Further, the above-described growth of the single crystal 14 was repeated 12 times or more, but no significant change was observed in the shape of the single crystal growth die 1. That is, it can be seen that the single crystal growing die 1 is not easily deformed and has excellent durability.

(Comparative example)
A plan view of a die 20 for growing a single crystal used as a comparative example is shown in FIG. In the die 20, each of the longitudinal directions 7 l of the openings 7 on the upper surface 5 of the plurality of slit portions 6 is parallel to the long side 3 of the upper surface 5. Each of the interval β and the interval δ of the opening 7 of the slit portion 6 is equal. The size or quantity of each part of the die 20 is as shown in FIG. Except for the single crystal growth die 20, the single crystal 14 is grown under exactly the same conditions as in the embodiment, and 36 single crystal substrates polished to a thickness of 0.4 mm from one single crystal are produced. It was.

Among the obtained 36 single crystal substrates, the Sn concentration in 32 single crystal substrates, which was located most outside the single crystal 14 during single crystal growth and excluding the four low crystallinity substrates, was measured by SIMS. It was. That is, in the cross section orthogonal to the growth direction D of the single crystal 14, the Sn concentration as the impurity in the region excluding the range of the distance of 1 mm from the outer edge of the cross section was measured. The measurement results are shown in FIG. The horizontal axis of the graph in FIG. 8 indicates the order in the thickness direction of the single crystal substrate obtained by cutting the Ga ₂ O ₃ -based single crystal 14 grown in a thick plate shape in parallel with the crystal main surface. The vertical axis of the graph in FIG. 8 represents a value obtained by dividing each measured value of the Sn concentration of 32 single crystal substrates by the average value of the Sn concentration of 32 substrates. The coefficient of variation (Cv) of 32 single crystal substrates, that is, the value obtained by dividing the standard deviation of the Sn concentration by the average value was 35.5% exceeding 30%. That is, it can be seen that the uniformity of the impurity concentration of the single crystal 14 grown by the comparative example die 20 is low.

From the time when the growth of the single crystal 14 is repeated six times, distortion is recognized in the middle part of the upper surface 5 of the die 20 for single crystal growth, and after the ninth time, the opening of the slit portion 6 located on the outside is observed. In the portion 7, the amount of the Ga ₂ O ₃ -based material melt 12 supplied from the center of the slit portion 6 decreases, and the Ga ₂ O ₃ -based material melt 12 wets and spreads over the entire upper surface 5 of the die 20. It became a state that does not peel off. That is, it can be seen that the conventional single crystal growing die 20 is easily deformed and is inferior in durability to the die 1 of the embodiment.

  DESCRIPTION OF SYMBOLS 1 ... Die, 2 ... Lower surface, 3 ... Long side, 4 ... Short side, 5 ... Upper surface, 5e ... Outer edge part, 6 ... Slit part, 7 ... Opening part, 7l ... Longitudinal direction, 7s ... Short side direction, 7c ... Center line, 10 ... single crystal production apparatus, 11 ... crucible, 12 ... raw material melt, 13 ... lid, 14 ... single crystal, 15 ... seed crystal, 16 ... seed crystal holder, 17 ... shaft, 20 ... die, D ... Growth direction, α ... distance, β ... interval, γ ... length, δ ... interval.

Claims (7)

A die for growing a single crystal by the EFG method,
A lower surface immersed in a raw material melt to which impurities are added;
A rectangular upper surface facing the seed crystal and having a long side and a short side shorter than the long side;
A plurality of slit portions extending from the lower surface to the upper surface and raising the raw material melt from the lower surface to the upper surface;
With
A die for growing a single crystal by an EFG method, wherein the longitudinal directions of the openings on the upper surface of the plurality of slit portions are parallel to each other and non-parallel to the long side of the upper surface.   2. The die for growing a single crystal by the EFG method according to claim 1, wherein each of the longitudinal directions of the openings on the upper surface of the plurality of slit portions is parallel to the short side of the upper surface.   The distance from the outer edge of the upper surface of the opening at the upper surface of the slit portion where the opening at the upper surface is closest to the outer edge of the upper surface among the plurality of slit portions is 2 mm or less. A die for growing a single crystal by the EFG method according to claim 1 or 2.   4. The EFG method according to claim 1, wherein an interval between center lines along the longitudinal direction of the opening on the upper surface of the slit portions adjacent to each other is 2 mm or less. 5. Dies for crystal growth.   The die for growing a single crystal by the EFG method according to any one of claims 1 to 4, wherein each of the lengths in the short direction of the openings on the upper surface of the plurality of slit portions is 2 mm or less. .   The single crystal growth method by the EFG method using the die | dye for single crystal growth by the EFG method of any one of Claims 1-5.   The single crystal according to the EFG method according to claim 6, wherein, in a cross section orthogonal to the growth direction of the single crystal, a coefficient of variation of an impurity concentration in a region excluding a range of a distance of 1 mm from an outer edge of the cross section is 30% or less. Single crystal by EFG method grown by the growing method.

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