JP2019157263A - Metal shadow mask and method for manufacturing the same - Google Patents
Metal shadow mask and method for manufacturing the same Download PDFInfo
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- 239000002184 metal Substances 0.000 title claims abstract description 102
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 3
- 238000005323 electroforming Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 35
- 239000010408 film Substances 0.000 description 27
- 238000002360 preparation method Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
本発明は、有機発光ダイオード表示技術に関し、詳しくは、金属シャドーマスク及びその製造方法に関する。 The present invention relates to an organic light emitting diode display technology, and more particularly, to a metal shadow mask and a manufacturing method thereof.
有機発光ダイオード（Ｏｒｇａｎｉｃ Ｌｉｇｈｔ−Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅ、ＯＬＥＤ）ディスプレイデバイスは、有機半導体材料を用いて製造され、直流電圧で駆動する薄膜発光部品である。薄型化、軽量化、高コントラスト、広い視野角などの利点から、次世代の表示技術の主流になると考えられる。 An organic light-emitting diode (OLED) display device is a thin-film light-emitting component manufactured using an organic semiconductor material and driven by a DC voltage. The advantages of thinning, lightening, high contrast, wide viewing angle, etc. are expected to become the mainstream of next-generation display technology.
その発光原理では、有機発光材料コーティング層に電流が流れると、コーティング層から光線を発する。現在、ＯＬＥＤ製造業界では、一般にシャドーマスク蒸着という単層蒸着の方法を用いている。蒸着時には、有機材料粒子は様々な角度でシャドーマスクの開口部を通して基板に付着する。通常の蒸着プロセスでは、シャドーマスクに分布する開口部はテーパを備えないため、粒子が開口部に斜め入射するとき、一部の粒子は開口部の壁に遮られて基板に到達しないまま途中で脱落する。その結果、基板の蒸着が不均一になり、シャドー現象が起こって製品の輝度を低下させ、ＯＬＥＤ部品の表示性能に影響を及ぼす。 In the light emission principle, when a current flows through the organic light emitting material coating layer, light is emitted from the coating layer. Currently, the OLED manufacturing industry generally uses a single layer deposition method called shadow mask deposition. During deposition, the organic material particles adhere to the substrate through the shadow mask openings at various angles. In the normal vapor deposition process, the openings distributed in the shadow mask do not have a taper, so when particles enter the openings obliquely, some of the particles are blocked by the walls of the openings and do not reach the substrate. take off. As a result, the deposition of the substrate becomes non-uniform, and a shadow phenomenon occurs, lowering the brightness of the product and affecting the display performance of the OLED component.
業界では現在、ＯＬＥＤ用シャドーマスクを作製するとき、シャドー現象を回避するために、金属ロールの両面エッチングという方法を用いている。しかし、この方法では開口部の寸法が均一になるように正確にコントロールすることができない。そして、シャドーマスクの酸化インジウムスズ（ＩＴＯ）面との接触面における開口部に逆テーパが存在するため、死角領域が発生し、蒸着の質に影響を及ぼしているのが現状である。 The industry currently uses a method called double-sided etching of a metal roll in order to avoid the shadow phenomenon when manufacturing a shadow mask for OLED. However, this method cannot be accurately controlled so that the size of the opening is uniform. And since the reverse taper exists in the opening part in a contact surface with the indium tin oxide (ITO) surface of a shadow mask, the blind spot area | region has generate | occur | produced and it has influenced the quality of vapor deposition.
本発明は、ガラス基板への蒸着におけるシャドー現象という問題を解決するための、金属シャドーマスク及びその製造方法を提供することを目的とする。 An object of the present invention is to provide a metal shadow mask and a manufacturing method thereof for solving the problem of a shadow phenomenon in vapor deposition on a glass substrate.
本発明では、上記の課題を解決するための、金属シャドーマスクの製造方法を提供する。この製造方法は、基板を用意する工程、上記基板上に感光膜を配置する工程、露光と現像を行って、上記感光膜を用いて上記基板に複数の第１の構造を形成する工程、上記基板上に金属層を形成する工程、上記金属層に感光膜を配置する工程、露光と現像を行って、上記感光膜を用いて金属層に、上記複数の第１の構造と互い違いに配列し、且つそれぞれ隣接する第１の構造と所定のピッチで離間する複数の第２の構造を形成する工程、上記金属層をエッチングする工程、及び上記複数の第１の構造と第２の構造を除去して、複数の孔を有する金属シャドーマスクを得る工程を含む。 The present invention provides a method for manufacturing a metal shadow mask for solving the above problems. The manufacturing method includes a step of preparing a substrate, a step of disposing a photosensitive film on the substrate, a step of performing exposure and development, and forming a plurality of first structures on the substrate using the photosensitive film, A step of forming a metal layer on the substrate, a step of arranging a photosensitive film on the metal layer, exposure and development, and using the photosensitive film, the metal layer is alternately arranged with the plurality of first structures. And forming a plurality of second structures separated from each adjacent first structure at a predetermined pitch, etching the metal layer, and removing the plurality of first structures and second structures. And obtaining a metal shadow mask having a plurality of holes.
さらに、本発明では、上記製造方法により作製される金属シャドーマスクを提供する。 Furthermore, the present invention provides a metal shadow mask manufactured by the above manufacturing method.
従来技術と比べて、本発明では、以下の技術的効果を得ることができる。
本発明に係る金属シャドーマスクの製造方法では、製造する過程で開口部の深さと角度をいずれもコントロールできる。そのため、開口部の精度が高く開口部の内部に角度がある金属シャドーマスクが得られ、これを蒸着に用いると、シャドーを軽減し、さらには解消することができる。また、ガラス基板に入射する有機材料粒子の損失を軽減し、蒸着の均一性を高め、製品の輝度低下を改善することができる。
Compared with the prior art, the present invention can obtain the following technical effects.
In the method for manufacturing a metal shadow mask according to the present invention, both the depth and angle of the opening can be controlled during the manufacturing process. Therefore, a metal shadow mask having a high accuracy of the opening and an angle inside the opening can be obtained, and when this is used for vapor deposition, the shadow can be reduced and further eliminated. Moreover, the loss of the organic material particle which injects into a glass substrate can be reduced, the uniformity of vapor deposition can be improved, and the brightness reduction of a product can be improved.
添付図面は、本発明の理解を深めるためのもので、本発明を構成する一部である。以下に示す例示的な実施例及びその説明は、本発明の理解のためのものであり、本発明の権利範囲を限定するものではない。
以下、図面を参照しながら、実施例を用いて本発明の実施形態について説明する。この説明により、本発明の技術的手段を利用して関連課題を解決し、所望の技術的効果を得る過程を十分に理解し、実施することが可能となる。 Hereinafter, embodiments of the present invention will be described using examples with reference to the drawings. By this explanation, it becomes possible to fully understand and implement a process of solving a related problem using the technical means of the present invention and obtaining a desired technical effect.
本明細書及び請求項において、特定の用語で特定の要素を指す場合、当業者にとって自明となるように、ハードウェアメーカとは異なる用語（名詞）で同一の要素を呼ぶこともある。本明細書及び請求項においては、名称の違いにより要素を区別するのではなく、機能上の違いが要素を区別するための基準となる。
本明細書及び請求項全体にわたって用いられる「含む」という用語は、開放的な意味を表す場合、「当該内容を含むが、ただしこれだけに限定されるものではない」と解釈すべきである。「ほぼ」という用語は、当業者が、許容可能な一定の誤差範囲において当該技術的課題を解決して、おおむね所望の技術的効果を得ることを指す。また、「接続」又は「電気的接続」という用語は、あらゆる直接的又は間接的な電気接続手段を含むものである。よって、「第１のデバイスが第２のデバイスに接続される」と記載された場合、当該第１のデバイスは、直接当該第２のデバイスに電気的に接続されるか、又はその他のデバイスや接続手段を介して間接的に当該第２のデバイスに電気的に接続されることを意味する。また、本明細書において、本発明の好ましい実施形態として説明される場合、当該内容は、本発明の一般的な原則のもとで説明するもので、本発明の範囲を限定するものではなく、本発明の保護範囲は、特許請求の範囲に基づいて決定されるべきである。
In the present specification and claims, when referring to a specific element by a specific term, the same element may be referred to by a term (noun) different from that of the hardware manufacturer, as will be apparent to those skilled in the art. In the present specification and claims, elements are not distinguished by differences in names, but differences in function serve as a reference for distinguishing elements.
The term “comprising” as used throughout the specification and claims is to be interpreted as “including, but not limited to, the subject matter” when expressed in an open sense. The term “substantially” means that a person skilled in the art can solve the technical problem within a certain allowable error range and generally obtain the desired technical effect. Also, the term “connection” or “electrical connection” includes any direct or indirect electrical connection means. Thus, when “the first device is connected to the second device” is described, the first device is electrically connected directly to the second device, or another device or It means that it is electrically connected to the second device indirectly through a connecting means. Further, in the present specification, when described as a preferred embodiment of the present invention, the content is described based on the general principle of the present invention, and does not limit the scope of the present invention. The protection scope of the present invention should be determined based on the claims.
なお、「含む」、又はこれに類する他の用語は、非除外的に包含することを意図する。一連の要素を含む過程、方法、製品又はシステムは、それらの要素を含むだけでなく、明記していないその他の要素も含み、さらに、このような過程、方法、製品又はシステムに固有の要素も含む。よって、特記がない限り、「一つの……を含む」という文言で限定された要素は、上記要素を含む過程、方法、製品又はシステムに同一の要素がさらに含まれる場合を除外しない。 It should be noted that “including” or other terms similar thereto are intended to be included non-excluded. A process, method, product, or system that includes a series of elements includes not only those elements, but also other elements that are not specified, as well as elements that are specific to such processes, methods, products, or systems. Including. Therefore, unless otherwise specified, an element limited by the phrase “including one ...” does not exclude the case where the same element is further included in the process, method, product, or system including the element.
図１に示すように、本発明の一実施例による金属シャドーマスクの製造方法は、以下に示す工程Ｓ１０１〜工程Ｓ１１５を含む。 As shown in FIG. 1, the manufacturing method of the metal shadow mask by one Example of this invention includes process S101-process S115 shown below.
工程Ｓ１０１：基板を用意する。前処理プロセスを経た清浄な基板を用いてもよいが、当該工程を行う前に、酸性洗浄剤と塩基性洗浄剤で洗浄して脱イオン水でリンスし、乾燥させた基板でもよい。 Step S101: A substrate is prepared. A clean substrate that has been subjected to a pretreatment process may be used, but a substrate that has been washed with an acidic detergent and a basic detergent, rinsed with deionized water, and dried before performing the step may be used.
工程Ｓ１０３：基板上に感光膜をに配置する。所定温度のローラを用いて、所定の圧力で感光膜２０を基板１０に押さえ付けることにより、感光膜２０を基板１０の表面に十分に付着させる（図２参照）。 Step S103: A photosensitive film is disposed on the substrate. The photosensitive film 20 is sufficiently adhered to the surface of the substrate 10 by pressing the photosensitive film 20 against the substrate 10 with a predetermined pressure using a roller having a predetermined temperature (see FIG. 2).
工程Ｓ１０５：露光と現像により、感光膜を用いて基板に複数の第１の構造を形成する。図２及び図３に示すように、当該工程では、感光膜２０が付着した基板１０を露光することにより、露光パターンにより第１のパターン層を形成する。次に露光した基板１０を所定の温度でベークすることにより、露光した感光膜２０を十分に反応させる。そして露光した基板１０を現像することにより、感光膜２０により基板１０の表面に、互いに離間して配列する複数の第１の構造３０（すなわち感光膜を露光・現像した後のドライフィルム）を形成する。 Step S105: A plurality of first structures are formed on the substrate using a photosensitive film by exposure and development. As shown in FIGS. 2 and 3, in this step, the substrate 10 with the photosensitive film 20 attached is exposed to form a first pattern layer with an exposure pattern. Next, the exposed photosensitive film 20 is sufficiently reacted by baking the exposed substrate 10 at a predetermined temperature. Then, the exposed substrate 10 is developed to form a plurality of first structures 30 (that is, dry films after the photosensitive film is exposed and developed) arranged on the surface of the substrate 10 by being separated from each other by the photosensitive film 20. To do.
場合によっては、複数の第１の構造３０を有する基板１０をハードベーク又はＵＶ硬化してもよい。現像した基板１０を高い温度でベークすると、複数の第１の構造３０がより硬くなり、基板の表面への付着がより強固になる。 In some cases, the substrate 10 having the plurality of first structures 30 may be hard baked or UV cured. When the developed substrate 10 is baked at a high temperature, the plurality of first structures 30 become harder and adherence to the surface of the substrate becomes stronger.
工程Ｓ１０７：金属層を基板に形成する。図４に示すように、複数の第１の構造３０を有する基板１０に電鋳を行う。これにより、基板１０の表面の第１の構造３０が配置されない部位に金属層４０を堆積させる。 Step S107: A metal layer is formed on the substrate. As shown in FIG. 4, electroforming is performed on a substrate 10 having a plurality of first structures 30. As a result, the metal layer 40 is deposited on the surface of the substrate 10 where the first structure 30 is not disposed.
工程Ｓ１０９：金属層上に感光膜を配置する。当該工程では、金属層４０が配置された基板１０に感光膜を付着する。所定温度のローラを用いて、感光膜２０を所定の圧力で金属層４０に押え付けることにより、感光膜２０を金属層４０の表面に十分に付着させる（図５参照）。当該工程を行う前に、場合によっては、金属層４０が配置された基板１０を洗浄、乾燥してもよい。例えば、脱イオン水でリンスして清浄にした基板１０を乾燥してから、感光膜２０の付着を行う。 Step S109: A photosensitive film is disposed on the metal layer. In this step, a photosensitive film is attached to the substrate 10 on which the metal layer 40 is disposed. The photosensitive film 20 is sufficiently adhered to the surface of the metal layer 40 by pressing the photosensitive film 20 against the metal layer 40 with a predetermined pressure using a roller having a predetermined temperature (see FIG. 5). Before performing this process, the substrate 10 on which the metal layer 40 is disposed may be washed and dried in some cases. For example, after the substrate 10 rinsed with deionized water and cleaned is dried, the photosensitive film 20 is attached.
工程Ｓ１１１：露光と現像を行って、感光膜を用いて金属層上に、複数の第１の構造と互い違いに配列し、且つそれぞれ隣接する第１の構造と所定のピッチで離間する複数の第２の構造を形成する。具体的には、図５及び図６に示すように、感光膜２０の付着した基板１０を露光することにより、露光パターンにより感光膜２０を用いて金属層４０に第２のパターン層を形成する。次に、露光した基板１０を所定温度でベークすることにより、露光した感光膜２０を十分に反応させる。続いて、露光した基板１０を現像することにより、感光膜２０に複数の第２の構造５０（すなわち感光膜２０を露光・現像した後のドライフィルム）を形成する。複数の第２の構造５０は、複数の第１の構造３０と互い違いに配列し、且つそれぞれ隣接する第１の構造３０と一定のピッチ（ΔＷ）離間する。このため、第１の構造３０と第２の構造５０の間では、金属層４０が一部露出する。 Step S111: performing exposure and development, and using a photosensitive film, a plurality of first structures are alternately arranged on the metal layer with a plurality of first structures and spaced apart from each adjacent first structure at a predetermined pitch. Two structures are formed. Specifically, as shown in FIGS. 5 and 6, by exposing the substrate 10 to which the photosensitive film 20 is attached, a second pattern layer is formed on the metal layer 40 using the photosensitive film 20 according to an exposure pattern. . Next, the exposed photosensitive film 20 is sufficiently reacted by baking the exposed substrate 10 at a predetermined temperature. Subsequently, the exposed substrate 10 is developed to form a plurality of second structures 50 (that is, dry films after the photosensitive film 20 is exposed and developed) on the photosensitive film 20. The plurality of second structures 50 are alternately arranged with the plurality of first structures 30 and are spaced apart from each adjacent first structure 30 by a certain pitch (ΔW). For this reason, a part of the metal layer 40 is exposed between the first structure 30 and the second structure 50.
当該工程では、感光膜２０を付着して、露光・現像する方法で第１の構造３０及び第２の構造５０を配置する。これにより、第１の構造３０と第２の構造５０の間のピッチΔＷを１．５μｍ以下の範囲にコントロールして、高い精度で位置合わせすることができる。そのため、後続のエッチング工程で深さと角度がほぼ同一の構造形態を得やすくなる。また、後続の工程で開口部の位置を正確に設定し、開口部が小さな金属シャドーマスク７０を作製することが可能である。 In this process, the first structure 30 and the second structure 50 are arranged by a method of attaching the photosensitive film 20 and exposing and developing. Thereby, the pitch ΔW between the first structure 30 and the second structure 50 can be controlled within a range of 1.5 μm or less, and alignment can be performed with high accuracy. Therefore, it becomes easy to obtain a structural form having substantially the same depth and angle in the subsequent etching process. Further, it is possible to accurately set the position of the opening in the subsequent process, and to manufacture the metal shadow mask 70 having a small opening.
当該工程の後、場合によっては、基板１０をハードベーク又はＵＶ硬化してもよい。現像した基板１０を高い温度でベークすると、複数の第２の構造５０がより硬くなり、より強固に付着する。 After the step, the substrate 10 may be hard-baked or UV-cured in some cases. When the developed substrate 10 is baked at a high temperature, the plurality of second structures 50 become harder and adhere more firmly.
工程Ｓ１１３：金属層をエッチングする。図６及び図７に示すように、金属エッチング液を使用して第１の構造３０と第２の構造５０の間に露出する金属層４０を、プロセスパラメータをコントロールしながらエッチングする。これにより、所定のエッチング深さ及び／又は角度とすることができる。なお、エッチング深さは、金属層４０の厚みに近いか又は等しくしてもよい。例えば、金属層４０の厚みが８〜１００μｍである場合、エッチング深さと金属層４０の厚みとの差は１μｍ以下であってもよい。また、第１の構造３０と第２の構造５０の間のピッチΔＷの大きさとエッチング深さをコントロールすることにより、エッチング面の角度を正確にコントロールすることができる。これにより、金属層４０のピッチΔＷに対応する部位でエッチングして上部から漸縮する溝６０を得、金属層４０の第１の構造に隣接する片側に、斜面又は曲面のガイド面４１を形成する。 Step S113: The metal layer is etched. As shown in FIGS. 6 and 7, the metal layer 40 exposed between the first structure 30 and the second structure 50 is etched using a metal etchant while controlling process parameters. Thereby, it can be set as predetermined etching depth and / or angle. Note that the etching depth may be close to or equal to the thickness of the metal layer 40. For example, when the thickness of the metal layer 40 is 8 to 100 μm, the difference between the etching depth and the thickness of the metal layer 40 may be 1 μm or less. Further, by controlling the size of the pitch ΔW between the first structure 30 and the second structure 50 and the etching depth, the angle of the etching surface can be accurately controlled. As a result, a groove 60 that is gradually reduced from above is etched at a portion corresponding to the pitch ΔW of the metal layer 40, and a sloped or curved guide surface 41 is formed on one side adjacent to the first structure of the metal layer 40. To do.
工程Ｓ１１５：複数の第１の構造と第２の構造を除去して、複数の孔を有する金属シャドーマスクを得る。図７及び図８に示すように、当該工程では、複数の第１の構造３０と第２の構造５０を有する基板１０を剥離槽に入れて剥離プロセスを行う。これにより、基板１０の感光膜を完全に除去して、複数の第１構造３０と第２の構造５０を基板１０から取り除く。その後、場合によっては、剥離後の基板１０を洗浄、乾燥して、金属シャドーマスク７０を基板から取り外して、固定してもよい。 Step S115: The plurality of first structures and the second structure are removed to obtain a metal shadow mask having a plurality of holes. As shown in FIGS. 7 and 8, in this step, the substrate 10 having a plurality of first structures 30 and second structures 50 is placed in a separation tank to perform a separation process. As a result, the photosensitive film on the substrate 10 is completely removed, and the plurality of first structures 30 and second structures 50 are removed from the substrate 10. Thereafter, in some cases, the peeled substrate 10 may be washed and dried, and the metal shadow mask 70 may be removed from the substrate and fixed.
第１の構造３０を取り除くと、金属層４０の第１の構造３０に対応する部位に、離間して配列する複数の孔４２が形成される。各孔４２により金属層４０の対向する２つの側面に、連通する第１の開口部４３及び第２の開口部４４が形成される。ここで、開口部の直径は１０μｍ程度となり得る。また、上記のエッチング工程で金属層４０と第１の構造３０の間に上から漸縮する溝６０が形成されている。このため、孔４２の直径は、第２の開口部４４から第１の開口部４３に向けて漸次縮小して、第２の開口部４４の直径が第１の開口部４３の直径より大きい構造が形成される。また、水平方向では、金属層４０の孔６０内に形成されるガイド面４１は、第２の開口部４４から第１の開口部４３に向けて傾斜する斜面、又は第２の開口部４４から第１の開口部４３に向けて湾曲する曲面であってもよい。 When the first structure 30 is removed, a plurality of holes 42 arranged at a distance from each other are formed at portions of the metal layer 40 corresponding to the first structure 30. A first opening 43 and a second opening 44 that communicate with each other are formed on two opposing side surfaces of the metal layer 40 by the holes 42. Here, the diameter of the opening may be about 10 μm. In addition, a groove 60 that gradually shrinks from above is formed between the metal layer 40 and the first structure 30 in the etching process. For this reason, the diameter of the hole 42 is gradually reduced from the second opening 44 toward the first opening 43, and the diameter of the second opening 44 is larger than the diameter of the first opening 43. Is formed. In the horizontal direction, the guide surface 41 formed in the hole 60 of the metal layer 40 is inclined from the second opening 44 toward the first opening 43, or from the second opening 44. It may be a curved surface that curves toward the first opening 43.
上記剥離プロセス後、場合によっては、剥離後の基板１０を洗浄、乾燥してもよい。最後に、金属シャドーマスク７０を基板１０から取り外して、固定する。 After the peeling process, in some cases, the peeled substrate 10 may be washed and dried. Finally, the metal shadow mask 70 is removed from the substrate 10 and fixed.
図８及び図９に示すように、本発明の一実施例では、上記プロセスにより、金属層４０を含む金属シャドーマスク７０が得られる。金属層４０は、ニッケル合金、ニッケル鉄合金又は鉄ニッケルコバルト合金からなるものでもよいが、これらに限定されない。金属層４０は、複数の孔４２を有しており、各孔４２は、金属層４０の対向する第１の表面４０１と第２の表面４０２を貫通し、且つ第１の表面４０１に第１の開口部４３が形成され、第２の表面４０２に第２の開口部４４が形成される。第２の開口部４４は第１の開口部４３と連通し、且つ第２の開口部４４の直径は、第１の開口部４３の直径よりも大きい。また、金属層４０は各孔４２内に、第２の開口部４４から第１の開口部４３に向けて傾斜する斜面、又は第２の開口部４４から第１の開口部４３に向けて湾曲する曲面のガイド面４１を有している。なお、金属層４０の第１の開口部４３のエッジと金属層４０の第２の開口部４４のエッジを結ぶ線は、金属層４０の第１の表面４０１又は第２の表面４０２と夾角θをなしている。当該夾角θの角度は、３０〜６０°である。これにより、蒸着時に、有機材料粒子を好ましい入射角で入射させ、シャドー現象を軽減し、さらには解消することできる。 As shown in FIGS. 8 and 9, in one embodiment of the present invention, a metal shadow mask 70 including the metal layer 40 is obtained by the above process. The metal layer 40 may be made of a nickel alloy, a nickel iron alloy, or an iron nickel cobalt alloy, but is not limited thereto. The metal layer 40 has a plurality of holes 42, and each hole 42 penetrates the first surface 401 and the second surface 402 of the metal layer 40 that face each other, and the first surface 401 has a first hole. The opening 43 is formed, and the second opening 44 is formed on the second surface 402. The second opening 44 communicates with the first opening 43, and the diameter of the second opening 44 is larger than the diameter of the first opening 43. Further, the metal layer 40 is curved in each hole 42 so as to be inclined from the second opening 44 toward the first opening 43 or from the second opening 44 toward the first opening 43. It has a curved guide surface 41. A line connecting the edge of the first opening 43 of the metal layer 40 and the edge of the second opening 44 of the metal layer 40 is an angle θ between the first surface 401 or the second surface 402 of the metal layer 40. I am doing. The depression angle θ is 30 to 60 °. Thereby, at the time of vapor deposition, organic material particles can be made incident at a preferable incident angle, and the shadow phenomenon can be reduced and further eliminated.
上記のとおり、本発明の好ましい実施例をいくつか示して説明した。ただし、本発明は、その他の実施例を除外して、本明細書に開示されている形態に限定されるものではない。その他のさまざまな組み合わせ、修正又は環境に用いることもでき、本明細書に記載されている本発明の技術思想を逸脱しない限り、上記の知見又は関連分野の技術もしくは知識によって変更を加えることができる。よって、当業者による変更や変形などは、本発明の技術思想と範囲から逸脱しないものであれば、いずれも添付の特許請求の範囲に含まれるものである。
As mentioned above, several preferred embodiments of the present invention have been shown and described. However, the present invention is not limited to the forms disclosed in the present specification, except for other examples. The present invention can be used in various other combinations, modifications, and environments, and can be changed based on the above knowledge or related techniques or knowledge without departing from the technical idea of the present invention described in this specification. . Therefore, any changes or modifications by those skilled in the art are included in the appended claims as long as they do not depart from the spirit and scope of the present invention.
Claims (15)
基板を用意する工程と、
前記基板上に1回目の感光膜を配置する工程と、
露光及び現像を行って、前記1回目の感光膜を用いて前記基板に複数の第１の構造を形成する工程と、
前記基板上に金属層を形成する工程と、
前記金属層に２回目の感光膜を配置する工程と、
露光及び現像を行って、前記２回目の感光膜を用いて前記金属層に、前記複数の第１の構造と互い違いに配列し、且つそれぞれ隣接する第１の構造と所定のピッチで離間する複数の第２の構造を形成する工程と、
前記金属層をエッチングする工程と、
前記複数の第１の構造と第２の構造を除去して、複数の孔を有する金属シャドーマスクを得る工程と、を含むことを特徴とする金属シャドーマスクの製造方法。 A method for manufacturing a metal shadow mask, comprising:
Preparing a substrate;
Placing a first photosensitive film on the substrate;
Performing exposure and development to form a plurality of first structures on the substrate using the first photosensitive film; and
Forming a metal layer on the substrate;
Placing a second photosensitive film on the metal layer;
A plurality of first and second photosensitive films that are exposed and developed to be arranged alternately with the plurality of first structures on the metal layer and spaced apart from each adjacent first structure at a predetermined pitch. Forming the second structure of:
Etching the metal layer;
Removing the plurality of first structures and the second structure to obtain a metal shadow mask having a plurality of holes, and a method of manufacturing a metal shadow mask.
A line connecting the edge of the first opening of the metal layer and the edge of the second opening of the metal layer forms an included angle of 30 to 60 degrees with the surface of the metal layer. The metal shadow mask according to claim 13, which is characterized by:
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| JPH10330910A (en) * | 1997-06-04 | 1998-12-15 | Toray Ind Inc | Shadow mask and its production |
| CN104164647A (en) * | 2013-05-17 | 2014-11-26 | 昆山允升吉光电科技有限公司 | Manufacture technology of mask plate |
| CN104213071A (en) * | 2013-06-01 | 2014-12-17 | 昆山允升吉光电科技有限公司 | Preparation technology for mask plate |
| JP2018526534A (en) * | 2015-08-05 | 2018-09-13 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Shadow mask for organic light emitting diode manufacturing |
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| CN103205695B (en) * | 2012-01-16 | 2015-11-25 | 昆山允升吉光电科技有限公司 | A kind of evaporation mask plate and manufacture craft thereof |
| CN103388121B (en) * | 2012-05-08 | 2017-07-11 | 昆山允升吉光电科技有限公司 | A kind of mixing manufacture craft of high-precision metal mask plate |
| CN203569176U (en) * | 2013-10-09 | 2014-04-30 | 昆山允升吉光电科技有限公司 | Mask plate and mask component for evaporation plating |
| CN104988458A (en) * | 2015-07-07 | 2015-10-21 | 昆山允升吉光电科技有限公司 | Manufacturing method for mask plate with taper-angled opening |
| CN108026628B (en) * | 2015-09-15 | 2020-09-25 | 应用材料公司 | Shadow mask for organic light emitting diode fabrication |
| CN106350769B (en) * | 2016-09-22 | 2019-03-01 | 常州友机光显电子科技有限公司 | A kind of metal shadow mask and preparation method thereof |
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| JPH10330910A (en) * | 1997-06-04 | 1998-12-15 | Toray Ind Inc | Shadow mask and its production |
| CN104164647A (en) * | 2013-05-17 | 2014-11-26 | 昆山允升吉光电科技有限公司 | Manufacture technology of mask plate |
| CN104213071A (en) * | 2013-06-01 | 2014-12-17 | 昆山允升吉光电科技有限公司 | Preparation technology for mask plate |
| JP2018526534A (en) * | 2015-08-05 | 2018-09-13 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Shadow mask for organic light emitting diode manufacturing |
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